CN106405964A - Array substrate, manufacturing method thereof and LCD (Liquid Crystal Display) - Google Patents
Array substrate, manufacturing method thereof and LCD (Liquid Crystal Display) Download PDFInfo
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- CN106405964A CN106405964A CN201610936106.1A CN201610936106A CN106405964A CN 106405964 A CN106405964 A CN 106405964A CN 201610936106 A CN201610936106 A CN 201610936106A CN 106405964 A CN106405964 A CN 106405964A
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 11
- 241001062009 Indigofera Species 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000010981 turquoise Substances 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 230000035515 penetration Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 82
- 239000011159 matrix material Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a colored film array substrate in the field of VA (Vertical Alignment) display. The colored film array substrate comprises an RGB (Red, Green and Blue) pixel array layer, wherein a red and blue color resistance stack is arranged between pixels in the RGB pixel array layer, a certain quantity of black cushion spacers are arranged above the pixels, a whole liquid crystal panel is supported by the black cushion spacers, meanwhile, a shading function is obtained as the black cushion spacers are used as a frame, the black cushion spacers are arranged above the pixels which are relatively flat, and a PFA (Polyfluoroalkoxy) material serving as a flat layer is not needed, so that the cost is reduced. The invention also provides an LCD (Liquid Crystal Display) comprising the colored film array substrate. The LCD comprises the colored film array substrate and an upper substrate. Since black matrixes on the colored film array substrate are eliminated and the black cushion spacers are arranged on the colored film array substrate, penetration rate loss caused by poor alignment accuracy during an alignment process of the colored film array substrate and the upper substrate is avoided. The invention further provides a manufacturing method of the colored film array substrate.
Description
Technical field
The present invention relates to VA field of liquid crystal, more particularly, to a kind of substrate and preparation method thereof, liquid crystal display.
Background technology
For plane conversion display pattern, due to being the mode of the arrangement that horizontal component of electric field drives liquid crystal, to electrode institute
The flatness requirement of place's plane is very high, therefore in addition to RGB color photoresistance, typically also covers layer of transparent light on chromatic photoresist
Hinder and to improve flatness.Therefore the BM-Less technology to develop on the basis of IPS display pattern, can be in data wire (Data
Line) and all shading is realized using the stacking of red blue light resistance on gate line (Gate Line), the existing company of this technology realizes
Volume production.But for VA (Vertical Alignment) display pattern it is contemplated that cost typically will not cover again flat
Layer.When developing BM-less technology, if hindering to realize stacking using reddish blue again on gate line and data wire, according to this
The experimental result of a person of good sense, then the meeting on gate line and data wire exceeds about color blocking layer compared with AA (Active Area) area
If height is it is assumed that be respectively designed to 3.0/3.0/3.2um by the thickness of tri- chromatic photoresists of RGB it is contemplated that the levelling of color blocking
Property, then can exceed the height of about 2.8um than other Pixel areas in the stacking of two kinds of color blockings of Gate/Data line.
Assume to design on Gate line by main chock insulator matter (Main CS) and secondary chock insulator matter (Sub CS), if liquid crystal
Show the box of panel thick be 3.5um, now outside the shared height of deduction R/B color blocking stacking, the Main CS height of design is only
0.8um, and lead to CS Elastic penetration inadequate.Finally resulting in display LC Margin not affects product yield.In addition,
Because Gate line and Data line is at R/B color blocking stacking, the flatness of wherein physical features is poor, leads to picture display effect
Fruit is not good, brightness irregularities easily, in order to improve above-described defect, and has to come as flatness layer from PFA, such as
This causes the cost increase of product.
The structure of liquid crystal display is sandwiched between liquid crystal layer for two panels glass substrate, wherein a piece of glass substrate (lower base
Plate) on prepare thin film transistor (TFT) (TFT), for driving the rotation of liquid crystal, control the display of each pixel；Another piece of substrate (on
Substrate) on prepare RGB color filter layer, for forming the color of each pixel.And COA (Color Filter on Array)
Technology be by color film layer R, G, B color blocking directly preparation infrabasal plate on technology, and black matrix" (BM) is only had on upper substrate
And cylindrical spacer (CS) layer, because there are not the alignment issues of upper substrate and infrabasal plate it is possible to drop in COA display floater
Difficulty to box processing procedure in low display floater preparation process, it is to avoid the aperture opening ratio loss that error during group is caused is therefore black
Colour moment battle array can be designed as narrow linewidth, improves the aperture opening ratio of pixel.And the Main Function of black matrix" be exactly frame and
Interception between pixel, prevents Gate line, Data line colour mixture and light leak, improves contrast, preferably aobvious to reach
Show effect.
Content of the invention
The technical problem to be solved in the present invention is based on color membrane array (COA) technology, provides one kind to can ensure that main dottle pin
The array base palte of thing film thickness uniformity, realizes under VA type liquid crystal display mode it is not necessary on the premise of PFA material, also can open
Send BM-Less technology, therefore, the present invention proposes a kind of array base palte.
Array base palte proposed by the present invention, set gradually from bottom to top the glass substrate containing thin film transistor (TFT) array,
One passivation layer, rgb pixels array layer, the second passivation layer, via, the first transparency conducting layer, described rgb pixels array layer
In, it is provided with reddish blue resistance stacking between pixel and pixel, above the gate line of described pixel, be provided with reddish blue resistance heap
Folded, it is provided with reddish blue resistance stacking above the data wire of described pixel.
Reddish blue resistance stacking instead of black matrix" of the prior art, for prevent redness, green, blue colour mixture and
Light leak, improves the contrast of liquid crystal display, has reached preferably display effect, further, it is also possible to utilize gate line data
As secondary chock insulator matter, when outer bound pair liquid crystal display applies certain pressure or under low temperature condition, it is secondary that upper substrate can push up this to line
On chock insulator matter, it is unlikely to damage upper substrate.
As a further improvement on the present invention, described thin film transistor (TFT) includes the first metal layer, grid from bottom to top successively
Insulating barrier, active layer, ohmic contact layer, second metal layer, described the first metal layer comprises the electricity of gate electrode and storage
Pole, described second metal layer is source electrode and drain electrode.
As a further improvement on the present invention, described via sequentially passes through described second passivation layer, described red from top to bottom
Green resistance stacking, described first passivation layer, described first transparency conducting layer is contacted with described second metal layer by described via.
After first transparency conducting layer is connected by via with second metal layer, persistently can provide voltage to pixel electrode,
To control the rotation of location of pixels liquid crystal.
As a further improvement on the present invention, described pixel faces are provided with black pillar (BCS), described black pillar is
Cylindric, this cylindric column that preferably sectional area is gradually reduced from bottom to top, described black pillar is arranged on described pixel
Side, angle, other positions in any position at center or pixel.
Black pillar instead of main pillar of the prior art and jury strut, and black pillar not only supports whole panel, also
Play the effect of shading as frame, one processing procedure can be saved on technique, shorten Tact time, reduce production cost, with
When, black pillar is arranged in relatively flat pixel it is ensured that the uniformity of thickness it is no longer necessary to PFA material do flat
Layer.
In addition, the more traditional main pillar of black pillar, jury strut compare the black pillar it is only necessary to a kind of height, in work
On skill processing procedure, two kinds need not be realized not using the technology such as Halftone mask or Gray Toner Mask in gold-tinted processing procedure
Same strut height, reduces technology difficulty, improves the yield of product.
The invention allows for a kind of manufacture method of above-mentioned array base palte, comprise the following steps：
Step one：Make thin film transistor array layer on the glass substrate；
Step 2：The full surface of the described glass substrate containing thin film transistor (TFT) array makes the first passivation layer；
Step 3：Make rgb pixels array layer successively above described first passivation layer, meanwhile, make RGB
During pel array layer, between pixel and pixel, that is, side makes reddish blue resistance stacking on the data line, makes above gate line
Reddish blue resistance stacking；
Step 4：Described rgb pixels array layer makes the second passivation layer, then makes and wear successively from top to bottom
Cross described second passivation layer, described reddish blue resistance stacking, the via of described first passivation layer；
Step 5：Make the first transparency conducting layer；
Step 6：Black chock insulator matter is made above pixel.
Present invention further proposes a kind of liquid crystal display, comprise above-mentioned array base palte, also comprise upper substrate, described on
Substrate is provided with the second transparency conducting layer towards described array base palte side, and described array base palte and described upper substrate are by described battle array
Black pillar on row substrate supports.
In traditional color membrane array technology, the black matrix" of upper substrate is cancelled, pillar is arranged on infrabasal plate, and
Upper substrate only arranges the second transparency conducting layer, it is to avoid because infrabasal plate and upper substrate cause because aligning accuracy is not good when to group
Penetrance is lost, and improves penetrance, is conducive to the exploitation of Curved screen.
As the improvement to described liquid crystal display, described infrabasal plate is provided with mark, described mark is used for realizing institute
State array base palte and to ensure to group precision to group with described upper substrate.
As the improvement further to institute's array base palte and described liquid crystal display, described first transparency conducting layer and described
Second transparency conducting layer is preferably ITO conducting film.
Be provided with array base palte proposed by the present invention, data wire and gate line reddish blue resistance stacking it is therefore prevented that gate line,
Data wire colour mixture and light leak, improve the contrast of liquid crystal display, have reached preferably display effect.Meanwhile, black props up
Post instead of black matrix" and main pillar, jury strut, on manufacturing process, reduces technology difficulty, improves the yield of product,
Because black pillar is arranged in flatter pixel, does flatness layer without PFA material, reduce cost, improve product
Competitiveness.
Brief description
Hereinafter will be based on embodiment and refer to the attached drawing is being described in more detail to the present invention.Wherein：
Fig. 1 is the array base-plate structure schematic diagram of the present invention；
Fig. 2 is the structure schematic top plan view of single pixel in the present invention；
Fig. 3 is the overall schematic of the array base palte of the present invention.
In the accompanying drawings, identical part uses identical reference.Accompanying drawing is not according to actual ratio.
Specific embodiment
Array base palte below in conjunction with accompanying drawing and the present invention and preparation method thereof, liquid crystal display are described in detail.
In conjunction with Fig. 1, array base palte proposed by the present invention is described in detail.
Array base palte proposed by the invention, be followed successively by from bottom to top the glass substrate 1 containing thin film transistor (TFT) array,
One passivation layer 2, rgb pixels array layer 3, the second passivation layer 4, via 5, the first transparency conducting layer 6, described rgb pixels
In array layer 3, between pixel and pixel, it is provided with reddish blue resistance stacking 33.
Thin film transistor (TFT) includes the first metal layer 11, gate insulator 12, active layer, Ohmic contact from bottom to top successively
Layer, second metal layer 13, described the first metal layer comprises the electrode of gate electrode and storage, described 13 layers of bag of second metal
Containing source electrode and drain electrode.
Via 5 sequentially passes through the second passivation layer 4, reddish blue resistance stacking 33, the first passivation layer 2 from top to bottom, and first is transparent
Conductive layer 6 is contacted with second metal layer 13 by via 5.
Black pillar 7 is provided with the pixel of rgb pixels array layer 3, described black pillar 7 is cylindrical, this cylinder
The section of shape is gradually reduced from bottom to top.
When making above-mentioned array base palte, mainly in accordance with following step：
Step one：The array layer 10 of thin film transistor (TFT), thin film transistor (TFT) 10 are made according to prior art on glass substrate 1
Include the first metal layer grid layer 11, gate insulator 12, active layer, ohmic contact layer, second metal layer from bottom to top successively
13；
Step 2：First is made blunt on the full surface of the described glass substrate 1 containing thin film transistor array layer 10
Change layer 2, the first passivation layer 2 can be very good protective film transistor；
Step 3：Above the first protective layer 2 make rgb pixels array layer 3, described rgb pixels array layer 3 by
Red 31, green 36, blue 32 pixels are arranged in order, in matrix arrangements, such as Fig. 3, and meanwhile, making rgb pixels array layer
When 3, between pixel and pixel, that is, data wire 34 top makes reddish blue resistance stacking 33, makes red indigo plant above gate line 35
Color blocking stacking 33, such as Fig. 2, the color blocking between pixel and pixel stacks and is preferably reddish blue resistance stacking, and what reddish blue resistance stacked wears
Rate preferably, certainly, can also be stacked using other color blockings as needed thoroughly, such as red green resistance stacking, turquoise color blocking stacking etc.；
Step 4：Second passivation layer 4 is made on rgb pixels array layer 3, then makes via 5, via 5 passes through the
Two passivation layers 4, reddish blue resistance stacking 33, the first passivation layer 2；
Step 5：First transparency conducting layer 6 is made on the second passivation layer 4, the first transparency conducting layer 6 is along the circle of via 5
Perisporium makes, and contacts with the 13 of second metal layer drain electrode.
Step 6：The top of the first transparency conducting layer 6 above the pixel in rgb pixels array layer 3 makes black
Chock insulator matter 7, black chock insulator matter 7 can be produced on side, angle, center or even other any positions of pixel, due to residing for pixel
Physical features is flatter, thus can ensure that the thickness evenness of black chock insulator matter 7 it is no longer necessary to PFA is doing flatness layer, black dottle pin
The quantity of thing 7 can make as needed.
Liquid crystal display proposed by the present invention, comprises array base palte proposed by the present invention, also comprises upper substrate, upper substrate bag
Include glass substrate 8 and be arranged on the second transparency conducting layer 9 towards array base palte side for the glass substrate 8, due in the present embodiment
Eliminate black matrix" on array base palte, and color film and black chock insulator matter 7 are provided with array base palte, upper substrate only includes glass
Glass substrate 8 and the second transparency conducting layer 9, thus preferably achieve array base palte and upper substrate to group and precision, reduce
Difficulty to box processing procedure in display floater preparation process, it is to avoid the aperture opening ratio loss that error during group is caused.
In addition, in order to realize array base palte with upper substrate to group action and precision, on the opposite position of infrabasal plate
It is provided with mark.
Finally illustrate, above example is merely to illustrate technical scheme and unrestricted, although with reference to relatively
Good embodiment has been described in detail to the present invention, it will be understood by those within the art that, can be to the skill of the present invention
Art scheme is modified or equivalent, the objective without deviating from technical solution of the present invention and scope, and it all should be covered at this
In the middle of the right of invention.
Claims (9)
1. a kind of array base palte, sets gradually the glass substrate containing thin film transistor (TFT) array, the first passivation layer, red from bottom to top
Turquoise pel array layer, the second passivation layer, via, the first transparency conducting layer, in described rgb pixels array layer, pixel and picture
It is provided with reddish blue resistance stacking between element.
2. array base palte according to claim 1 it is characterised in that：Described thin film transistor (TFT) includes from bottom to top successively
One metal level, gate insulator, active layer, ohmic contact layer, second metal layer, described the first metal layer comprises gate electrode and deposits
The electrode of storing up electricity container, described second metal layer comprises source electrode and drain electrode.
3. array base palte according to claim 2 it is characterised in that：Described via sequentially passes through described second from top to bottom
Passivation layer, described reddish blue resistance stacking, described first passivation layer.
4. array base palte according to claim 3 it is characterised in that described first transparency conducting layer pass through described via with
Described second metal layer contact.
5. array base palte according to claim 1 it is characterised in that：Black pillar is provided with described pixel, described black
Color pillar is cylindrical.
6. array base palte according to claim 5 it is characterised in that：Described columned section gradually subtracts from bottom to top
Little.
7. a kind of manufacture method of the array base palte according to any one of claim 1～6, comprises the following steps：
Step one：Make thin film transistor array layer on the glass substrate；
Step 2：The full surface of the described glass substrate containing thin film transistor (TFT) array makes the first passivation layer；
Step 3：Make rgb pixels array layer successively above described first passivation layer, meanwhile, make rgb pixels
During array layer, between pixel and pixel, that is, side makes reddish blue resistance stacking on the data line, makes red indigo plant above gate line
Color blocking stacks；
Step 4：Described rgb pixels array layer makes the second passivation layer, then makes and sequentially pass through institute from top to bottom
State the second passivation layer, described reddish blue resistance stacking, the via of described first passivation layer；
Step 5：Make the first transparency conducting layer；
Step 6：Black chock insulator matter is made above pixel.
8. a kind of liquid crystal display, it is characterised in that comprising the array base palte according to any one of claim 1～6, is gone back
Comprise upper substrate, described upper substrate is provided with the second transparency conducting layer, described array base palte and institute towards described array base palte side
State upper substrate and pass through the black pillar support on described array base palte.
9. liquid crystal display according to claim 8 it is characterised in that：It is provided with mark, described mark on described infrabasal plate
Know and to group and ensure to group precision with described upper substrate for realizing described array base palte.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610936106.1A CN106405964A (en) | 2016-11-01 | 2016-11-01 | Array substrate, manufacturing method thereof and LCD (Liquid Crystal Display) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610936106.1A CN106405964A (en) | 2016-11-01 | 2016-11-01 | Array substrate, manufacturing method thereof and LCD (Liquid Crystal Display) |
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| Publication Number | Publication Date |
|---|---|
| CN106405964A true CN106405964A (en) | 2017-02-15 |
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| CN201610936106.1A Pending CN106405964A (en) | 2016-11-01 | 2016-11-01 | Array substrate, manufacturing method thereof and LCD (Liquid Crystal Display) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037657A (en) * | 2017-06-12 | 2017-08-11 | 京东方科技集团股份有限公司 | A kind of COA substrates and preparation method thereof, display panel, display device |
| WO2018161409A1 (en) * | 2017-03-08 | 2018-09-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel and liquid crystal display |
| CN114093274A (en) * | 2021-12-09 | 2022-02-25 | 武汉华星光电半导体显示技术有限公司 | Display device and display terminal |
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