CN106405382A - Performance test system for low-illumination CMOS chip - Google Patents
Performance test system for low-illumination CMOS chip Download PDFInfo
- Publication number
- CN106405382A CN106405382A CN201610700230.8A CN201610700230A CN106405382A CN 106405382 A CN106405382 A CN 106405382A CN 201610700230 A CN201610700230 A CN 201610700230A CN 106405382 A CN106405382 A CN 106405382A
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- light
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- cmos chip
- level
- integral ball
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2825—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere in household appliances or professional audio/video equipment
Abstract
The invention discloses a performance test system for a low-illumination CMOS chip. The system comprises a halogen tungsten lamp light source, an electric slit, a first integrating sphere, an aperture-variable diaphragm, a second integrating sphere, a camera obscura, the low-illumination CMOS chip to be tested, an illumination meter and a computer, the low-illumination CMOS chip is arranged in the camera obscura, uniform light generated by a halogen tungsten lamp is input to a photosensitive surface of the low-illumination CMOS chip, the computer adjusts the electric slit and the aperture-variable diaphragm to change the illumination, exposure time of the chip is set, an image signal generated by the low-illumination CMOS chip is collected and converted into a corresponding voltage signal, and corresponding parameter values are obtained via data processing. The system can evaluate the performance of the low-illumination CMOS chip scientifically, and provides basis for research and production of low-illumination CMOS.
Description
Technical field
The invention belongs to low-light technical field of measurement and test, particularly a kind of low-light (level) CMOS chip Performance Test System.
Background technology
The major parameter of low-light (level) CMOS chip performance test has signal to noise ratio, dynamic range, defect pixel, electronic voltage to turn
Change gain, dark current, saturation output current, full trap electric charge, read noise, responsiveness, uniformity etc., cmos device has space
Capability of resistance to radiation is strong, dynamic range is big, reading speed is fast, low cost, small volume, lightweight, integrated level is high, power consumption is low excellent
Point, can achieve observation, Digital Transmission, store function round the clock, is widely used in vehicle-mounted/helmet load image fusion system, rifle is taken aim at and is
The various fields such as system, laser guidance, safety monitoring, are increasingly becoming main solid imaging device, therefore to low-light (level) CMOS device
The test of part also becomes particularly important.
Less to the achievement in research of low-light (level) CMOS performance test both at home and abroad at present.Patent of invention 201510732802.6 is public
Open a kind of low-light (level) CMOS signal to noise ratio test device, this test device can only be used for testing the signal to noise ratio of low-light (level) CMOS, and
Armrest can only move and adjust diaphragm and illuminance is adjusted, complex operation and error is larger.
Content of the invention
It is an object of the invention to provide a kind of low-light (level) CMOS chip Performance Test System.
The technical scheme realizing the object of the invention is：A kind of low-light (level) CMOS chip Performance Test System, including halogen tungsten lamp
Light source, electronic slit, first integral ball, aperture-variable diaphragm, second integral ball, camera bellows, low-light (level) CMOS chip to be measured, illumination
Degree meter and computer；
Described electronic slit is arranged between halogen tungsten lamp light source and first integral ball incidence surface, and described aperture-variable diaphragm sets
Put between first integral ball exiting surface and second integral ball incidence surface, the exiting surface of second integral ball connects camera bellows entrance, secretly
The built-in low-light (level) CMOS chip to be measured of case, low-light (level) CMOS chip output end connects computer, and second integral ball exiting surface is located
Ball wall is provided with two fenestras, and for connecting the silicon photocell on illuminometer and multiplier tube, described illuminometer is used for reading
Incide the illuminance of low-light (level) CMOS chip photosurface；
The light that halogen tungsten lamp light source sends is decayed to illuminance through electronic slit, and slit size is by computer control
System, the light after decay incides in first integral ball, first integral ball emergent light again pass by aperture-variable diaphragm carry out secondary
Decay, incides in second integral ball through the light of secondary extinction, so that light is uniformly incided by second integral ball low in camera bellows
On the photosurface of illumination CMOS chip, low-light (level) CMOS chip rear end connects computer, and described computer is used for low-light (level)
CMOS chip output signal carries out video acquisition.
Compared with prior art, its remarkable advantage is the present invention：
(1) present invention adopts Bi-integrated sphere, the integrating sphere light-source system of electronic slit and aperture diaphragm composition, can obtain
10-7～103Lx, uniformity is not less than 96% face uniform source of light；(2) present invention adopts electronic slit and aperture-variable diaphragm real
The now fine adjustment to output light source illumination, using computer controls electronic slit size, and energy real-time monitored is in the process of regulation
In incide low-light (level) CMOS chip light source illumination, realize the consecutive variations of illumination under color temperature constant, have stability and
Reproducible feature；(3) camera bellows of the present invention adopts corner structure, it is to avoid veiling glare enters camera bellows from corner angle；(4) present invention makes
Illumination photometer can measure 10-9Light source in the range of lx to lx up to ten thousand simultaneously can be shown with compunication on computers in real time
The brightness value recording；(5) traditional illumination photometer need by probe placement second integral ball exiting surface, performance under different illumination
During test, illumination photometer probe and chip to be measured, complex operation and increase error need to be exchanged back and forth, and the illumination photometer that the present invention uses
Can real-time detection illumination, chip position to be measured need not be changed.
Below in conjunction with the accompanying drawings the present invention is described in further detail.
Brief description
Fig. 1 is the low-light (level) CMOS chip comprehensive performance testing system principle schematic of the present invention.
Specific embodiment
In conjunction with Fig. 1, a kind of low-light (level) CMOS chip Performance Test System of the present invention, including halogen tungsten lamp light source 1, electronic narrow
Seam 2, first integral ball 3, aperture-variable diaphragm 4, second integral ball 5, camera bellows 6, low-light (level) CMOS chip to be measured, illuminometer 7
With computer 8；
Described electronic slit 2 is arranged between halogen tungsten lamp light source 1 and first integral ball 3 incidence surface, described variable aperture light
Door screen 4 is arranged between first integral ball 3 exiting surface and second integral ball 5 incidence surface, and the exiting surface of second integral ball 5 connects camera bellows
6 entrances, the built-in low-light (level) CMOS chip to be measured of camera bellows 6, low-light (level) CMOS chip output end connects computer 8, second integral ball 5
Exiting surface place ball wall is provided with two fenestras, for connecting silicon photocell and multiplier tube on illuminometer 7, described illuminance
Meter 7 is used for reading the illuminance inciding low-light (level) CMOS chip photosurface；
The light that halogen tungsten lamp light source 1 sends is decayed to illuminance through electronic slit 2, and slit size is by computer 8
Control, the light after decay incides in first integral ball 3, and first integral ball 3 emergent light again passes by aperture-variable diaphragm 4 to be carried out
Secondary extinction, incides in second integral ball 5 through the light of secondary extinction, so that light is uniformly incided secretly by second integral ball 5
On the photosurface of low-light (level) CMOS chip in case 6, low-light (level) CMOS chip rear end connects computer 8, and it is right that described computer 8 is used for
Low-light (level) CMOS chip output signal carries out video acquisition.
The integration being made up of halogen tungsten lamp light source 1, electronic slit 2, first integral ball 3, aperture diaphragm 4 and second integral ball 5
The radiant illumination of the light that ball light-source system produces is 10-7～103Lx, surface uniformity is not less than 96%.
Illuminometer 7 is mainly made up of silicon photocell, multiplier tube, high voltage power supply control module and current acquisition module；
Described silicon photocell and multiplier tube are arranged on two fenestras on second integral ball 5 exiting surface place ball wall, point
The light source under different illumination Yong Yu not detected, described high voltage power supply control module is used for multiplier tube applied voltage, described electric current
Acquisition module is used for gathering the electric current that silicon photocell or multiplier tube produce.
Described silicon photocell is used for detecting the light source that illuminance is more than or equal to 1lx, and described multiplier tube detects illuminance 10-9lx
The light source of～1lx.The corresponding brightness value of current characteristics Calibrated current value according to silicon photocell before use.In automatic mode
Under, when institute's light-metering illumination is more than or equal to 1lx, photomultiplier is not added with voltage, only by silicon photocell, optical signal is visited
Survey, obtain current light angle value.When institute's light-metering illumination is less than 1lx, electricity is applied to multiplier tube by high voltage power supply control module
Pressure, multiplier tube detects the optical signal after amplifying, and obtains now incident illumination angle value in the case of demarcating.
The present invention is based on said structure, and test system operation principle is：
Low-light (level) CMOS chip is placed in camera bellows, and adjusts fixture height, make chip focal plane and integrating sphere light-emitting window
Positioned at same level, adjust halogen tungsten lamp light source supply voltage, halogen tungsten lamp light source supply voltage is 6V, power is 10W.By halogen tungsten
Lamp source preheats a few minutes, makes the light stability of generation.When light source color temperature stable in 2856K about when, proceed by low-light (level)
CMOS chip all-round property testing.
Using 1lx illuminance as low-light (level) CMOS chip test condition, by adjusting electronic slit and aperture-variable diaphragm,
Fine adjustment is carried out to illuminance.
Illumination is that the uniform light of 1lx is radiated on the photosurface of low-light (level) CMOS chip, using computer installation gain and
Time for exposure, using computer, the output signal of low-light (level) CMOS chip is acquired simultaneously, continuous acquisition 100 two field picture
Grey scale signal, and it is converted into voltage signal.
When test reads noise, dark uniformity, dark current and dark responsiveness parameter, close light source, avoid ambient light as far as possible
Interference, arranges certain time for exposure, also with computer, the output signal of low-light (level) CMOS chip is acquired, continuously adopts
Collect the grey scale signal of 100 two field pictures, and be converted into voltage signal.
Computer, according to parameter calculation formula, is calculated low-light (level) CMOS chip under 1lx illumination, different exposure time
Under corresponding parameter value.
Claims (4)
1. a kind of low-light (level) CMOS chip Performance Test System is it is characterised in that include halogen tungsten lamp light source (1), electronic slit
(2), first integral ball (3), aperture-variable diaphragm (4), second integral ball (5), camera bellows (6), low-light (level) CMOS chip to be measured, light
Illumination photometer (7) and computer (8)；
Described electronic slit (2) is arranged between halogen tungsten lamp light source (1) and first integral ball (3) incidence surface, described variable aperture
Diaphragm (4) is arranged between first integral ball (3) exiting surface and second integral ball (5) incidence surface, second integral ball (5) go out light
Face connects camera bellows (6) entrance, the built-in low-light (level) CMOS chip to be measured of camera bellows (6), and low-light (level) CMOS chip output end connects calculating
Machine (8), second integral ball (5) exiting surface place ball wall is provided with two fenestras, for connecting the silicon photoelectricity on illuminometer (7)
Pond and multiplier tube, described illuminometer (7) is used for reading the illuminance inciding low-light (level) CMOS chip photosurface；
The light that halogen tungsten lamp light source (1) sends is decayed to illuminance through electronic slit (2), and slit size is by computer
(8) control, the light after decay incides in first integral ball (3), and first integral ball (3) emergent light again passes by variable aperture light
Late (4) carry out secondary extinction, incide in second integral ball (5) through the light of secondary extinction, make light by second integral ball (5)
Uniformly incide on the photosurface of the interior low-light (level) CMOS chip of camera bellows (6), low-light (level) CMOS chip rear end connects computer (8),
Described computer (8) is used for carrying out video acquisition to low-light (level) CMOS chip output signal.
2. low-light (level) CMOS chip Performance Test System according to claim 1 is it is characterised in that by halogen tungsten lamp light source
(1), the integrating sphere light-source system that electronic slit (2), first integral ball (3), aperture diaphragm (4) and second integral ball (5) form
The radiant illumination of the light producing is 10-7～103Lx, surface uniformity is not less than 96%.
3. low-light (level) CMOS chip Performance Test System according to claim 1 is it is characterised in that illuminometer (7) is main
To be made up of silicon photocell, multiplier tube, high voltage power supply control module and current acquisition module；Described silicon photocell and multiplier tube set
Put on two fenestras on the ball wall of second integral ball (5) exiting surface place, be respectively used to detect the light source under different illumination, institute
State high voltage power supply control module for multiplier tube applied voltage, described current acquisition module is used for gathering silicon photocell or multiplication
The electric current that pipe produces.
4. low-light (level) CMOS chip Performance Test System according to claim 3 is it is characterised in that described silicon photocell is used
In detecting the light source that illuminance is more than or equal to 1lx, described multiplier tube detects illuminance 10-9The light source of lx～1lx.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610700230.8A CN106405382A (en) | 2016-08-22 | 2016-08-22 | Performance test system for low-illumination CMOS chip |
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| CN201610700230.8A CN106405382A (en) | 2016-08-22 | 2016-08-22 | Performance test system for low-illumination CMOS chip |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929351A (en) * | 2016-06-03 | 2016-09-07 | 中国电力科学研究院 | Test apparatus and test method of sensitivity of ultraviolet imager |
| CN106998466A (en) * | 2017-03-31 | 2017-08-01 | 中国科学院新疆理化技术研究所 | The method of testing of the full trap of CMOS active pixel sensor after irradiation |
| CN107027022A (en) * | 2017-03-20 | 2017-08-08 | 南京理工大学 | Low-light (level) CMOS resolution test devices |
| CN107144755A (en) * | 2017-06-28 | 2017-09-08 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency universal testing method based on hot spot |
| CN107449587A (en) * | 2017-08-16 | 2017-12-08 | 中国科学院国家天文台 | The device and method of inhomogeneities in a kind of test probe pixel |
| CN110703018A (en) * | 2019-10-12 | 2020-01-17 | 中国科学院近代物理研究所 | Silicon photoelectric device batch measurement system |
| CN113203931A (en) * | 2021-04-25 | 2021-08-03 | 湘潭大学 | In-situ measurement system and method for CCD saturation signal after gamma ray irradiation |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105929351A (en) * | 2016-06-03 | 2016-09-07 | 中国电力科学研究院 | Test apparatus and test method of sensitivity of ultraviolet imager |
| CN105929351B (en) * | 2016-06-03 | 2019-06-04 | 中国电力科学研究院 | Test device and the test method of ultraviolet imager sensitivity |
| CN107027022A (en) * | 2017-03-20 | 2017-08-08 | 南京理工大学 | Low-light (level) CMOS resolution test devices |
| CN106998466A (en) * | 2017-03-31 | 2017-08-01 | 中国科学院新疆理化技术研究所 | The method of testing of the full trap of CMOS active pixel sensor after irradiation |
| CN107144755A (en) * | 2017-06-28 | 2017-09-08 | 中国科学院新疆理化技术研究所 | A kind of charge coupling device charge transfer effciency universal testing method based on hot spot |
| CN107144755B (en) * | 2017-06-28 | 2019-08-16 | 中国科学院新疆理化技术研究所 | A kind of charge-coupled device charge transfer effciency universal testing method based on hot spot |
| CN107449587A (en) * | 2017-08-16 | 2017-12-08 | 中国科学院国家天文台 | The device and method of inhomogeneities in a kind of test probe pixel |
| CN110703018A (en) * | 2019-10-12 | 2020-01-17 | 中国科学院近代物理研究所 | Silicon photoelectric device batch measurement system |
| CN113203931A (en) * | 2021-04-25 | 2021-08-03 | 湘潭大学 | In-situ measurement system and method for CCD saturation signal after gamma ray irradiation |
| CN113203931B (en) * | 2021-04-25 | 2022-05-03 | 湘潭大学 | In-situ measurement system and method for CCD saturation signal after gamma ray irradiation |
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