CN106403808A - Apparatus and method for measuring appearance of through silicon via - Google Patents
Apparatus and method for measuring appearance of through silicon via Download PDFInfo
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- CN106403808A CN106403808A CN201510450706.2A CN201510450706A CN106403808A CN 106403808 A CN106403808 A CN 106403808A CN 201510450706 A CN201510450706 A CN 201510450706A CN 106403808 A CN106403808 A CN 106403808A
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Abstract
The invention discloses an apparatus for measuring morphological information of a through silicon via. The apparatus comprises an infrared laser light source for providing an illuminating beam; an illuminating unit for adjusting the illuminating beam and irradiating an etching or non-etching surface of a through silicon via to be measured; an imaging detection unit for detecting a diffraction angle spectrum signal generated when the illuminating beam irradiates the front or reverse side of the through silicon via to be measured; and a processing unit for obtaining, based on the diffraction angle spectrum signal, the morphological information of the through silicon via to be measured.
Description
Technical field
The present invention relates to a kind of IC manufacturing equips field, more particularly, to a kind of apparatus and method of measurement through hole silicon pattern.
Background technology
With the development of semiconductor technology, the size reducing device has become more and more difficult.One overcome these difficulties approach be by multiple semiconductor devices（Chip）Carry out integrated in vertical direction.This approach will allow integrated substantial amounts of device on an applying unit, also allow integrated multiple chip with difference in functionality on one system simultaneously（Such as sensing, processor and memory）, thus realizing more preferable functional performance.
A kind of Vertical collection technology currently developing rapidly is based on through hole silicon（TSV）Integrated technology.Compare and other technology, TSV is a kind of high performance technology.This is because the density of TSV can do very big, simultaneously TSV line can be made shorter, so that TSV is interconnected in the aspects such as integration density, communication speed, power consumption, with respect to other encapsulation interconnection techniques（As Wire
Bonding）There is suitable advantage.
In TSV flow process, very crucial step is the formation of through hole, in order to persistently obtain the thru-hole quality meeting demand, needs real-time monitoring, the key parameter of control hole, such as top aperture, bottom part aperture diameter and hole depth in TSV preparation flow.
Traditional line Measurement Technique includes light/dark field microscope, infrared microscope, white light interferometer（Veeco）, confocal microscope.But it respectively has deficiency, for example, light/dark field microscope has higher level to resolution ratio, but they are difficult to measure hole depth, and then in contrast, its vertical resolution is higher for white light interferometer, but level is to lack of resolution, confocal microscope then needs to be scanned vertical.Inefficiency.And, the reduction with TSV aperture and the increase of depth-to-width ratio, even white light interferometer or visible ray confocal microscope, the measurement to hole depth also shows difficult all the more.
Under this background, in recent years, people start to develop new measurement means to measure the technology of small-bore, big depth-to-width ratio TSV.Prior art, such as United States Patent (USP) US8649016, US20130308131 discloses several measurement means.As the scatterometry technology based on details in a play not acted out on stage, but told through dialogues, this technology is passed through the means such as Polarization Modulation or pupil face intensity modulation, is stopped that the specular light of incident light direction reaches receiving terminal, realizes the high s/n ratio measurement of device to hole side wall angle reflected light.The and for example measuring method based on multi-wavelength infrared external reflection instrument, this process employs two know-whies, and one is the coherent superposition using bottom hole portion and top reflective signal, so with the change of incident light frequency, reflectivity is in mechanical periodicity.By extracting the spectral information of reflectivity, calculate hole depth.Two is can to penetrate silicon chip using infrared light, and measurement is not affected by hole depth.But the method is limited to little NA and long wavelength, measurement hot spot ratio is larger, and when measuring Small-deep Hole, noise is big, low precision.For another example, infrared light confocal microscope technology, can measure the hole depth in the hole of more than diameter 5um.
Content of the invention
In order to overcome defect present in prior art, it is an object of the invention to provide the device and method to small-bore, the not damaged on-line measurement in big depth-to-width ratio TSV top aperture, top aperture and hole depth.
In order to realize foregoing invention purpose, the present invention discloses a kind of device of measurement through hole silicon topographical information, including：One infrared laser light source, for providing an illuminating bundle；One lighting unit, for adjusting this illuminating bundle and exposing to the etched surface of a through hole silicon to be measured or non-etched surface；One imaging detection unit, for detect this illuminating bundle expose to this through hole silicon to be measured front or back when produced angle of diffraction spectrum signal；One processing unit, for obtaining the topographical information of this through hole silicon to be measured according to this angle of diffraction spectrum signal.
Further, this processing unit by this angle of diffraction spectrum signal carry out Converse solved to obtain the topographical information of this through hole silicon to be measured.
Further, this angle of diffraction spectrum signal and emulation experiment data are compared by this processing unit, to obtain the topographical information of this through hole silicon to be measured.
Further, this illuminating bundle is vertical or exposes to the etched surface of this through hole silicon to be measured or non-etched surface by certain incidence angle.
Further, this lighting unit includes a polarizer, a field stop, one first light fixture, an aperture diaphragm, a speculum or spectroscope and the second light fixture successively by the direction that light is propagated.
Further, this field stop moves along the position vertical with illuminating bundle.
Further, this illuminating bundle blocks diaphragm to the etched surface of this through hole silicon to be measured from the second light fixture outgoing to one.
Further, this imaging detection unit includes image-forming objective lens and the first ccd detector successively by the direction that light is propagated.
Further, place one between this image-forming objective lens and this first ccd detector and block diaphragm for blocking the zero order light of this angle of diffraction spectrum signal.
Further, this imaging detection unit also includes one second ccd detector, and the one the second ccd detectors are respectively used to detect the angle of diffraction spectrum signal in reflecting surface direction and the angle of diffraction spectrum signal of transmission direction.
Further, this imaging detection unit also includes a relay lens, for being all imaged the angle of diffraction spectrum signal of the angle of diffraction spectrum signal in reflecting surface direction and transmission direction to this first ccd detector.
Present invention simultaneously discloses a kind of method of measurement through hole silicon topographical information, including：Step one：Expose to the etched surface of a through hole silicon to be measured or non-etched surface using an infrared illumination light beam；Step 2：Detect this illuminating bundle expose to this through hole silicon to be measured front or back when produced angle of diffraction spectrum signal；Step 3：This angle of diffraction spectrum signal is carried out Converse solved or compares to obtain the topographical information of this through hole silicon to be measured with emulation experiment data.
Further, in this step 3, emulation experiment data obtains according to electromagnetic wave information and material information.
Compared with prior art, the technological merit of the present invention is：
Firstth, the present invention adopts angular spectrum to measure, and extracts and reflects hole depth, side wall, senior angular spectrum signal of aperture pattern simultaneously, these parameters can be measured simultaneously.
Secondth, the present invention is measured using infrared light it is only necessary to a kind of electromagnetic wave of wavelength, can preferably penetrate TSV sample, extracting TSV footer information, arbitrarily can changing incident angle, thus obtaining more metrical informations.
3rd, the present invention can gather reflecting surface deflection spectrum signal and transmission plane deflection spectrum signal simultaneously, it is possible to obtain the information of more reflection patterns.
4th, the present invention does not need to carry out vertical scanning, and measurement efficiency is higher.
Brief description
Can be described in detail by invention below with regard to the advantages and spirit of the present invention and institute's accompanying drawings are further understood.
Fig. 1 is through hole silicon diffraction angular spectrum schematic diagram；
Fig. 2 is the measuring method schematic diagram of through hole silicon provided by the present invention；
Fig. 3 is the structural representation of the first embodiment of through hole silica measurement device provided by the present invention；
Fig. 4 is diffraction angular spectrum schematic diagram during second embodiment and the oblique incidence of through hole silica measurement device provided by the present invention；
Fig. 5 is the structural representation of the 3rd embodiment of through hole silica measurement device provided by the present invention；
Fig. 6 is the structural representation of the 4th embodiment of through hole silica measurement device provided by the present invention；
Fig. 7 is the structural representation of the 5th embodiment of through hole silica measurement device provided by the present invention.
Specific embodiment
Describe the specific embodiment of the present invention below in conjunction with the accompanying drawings in detail.
Fig. 1 is through hole silicon diffraction angular spectrum schematic diagram.As shown in figure 1, diffraction can occur during directs light irradiation TSV deep hole, such as Fig. 1（a）Shown.Diffraction angular spectrum（As Fig. 1（b））Relevant with the pattern in hole, therefore, it can know hole top, bottom part aperture diameter, hole depth key topographical information by analyzing angle of diffraction spectrum signal.
The present invention is based on principles above, by being contrasted emulation data with experimental data, the topographical information in Converse solved acquisition hole.Converse solved thinking, as shown in Fig. 2 passing through electromagnetic theory modeling pattern, using electromagnetic wave information 202 and material information 203 as input value, to calculate the angular spectrum of different 3D pattern TSV, and stores on computers, thus constituting a Sample Storehouse 205.The topographical information of TSV is measured during measurement（Including aperture, bottom part aperture diameter, hole depth key topographical information）201, the angular spectrum measuring 204 is carried out Converse solved or directly carries out mating 205 with the angular spectrum in Sample Storehouse, thus trying to achieve the structural parameters of measurement sample.
Several embodiment described below is to absolutely prove the device of measurement through hole silicon pattern provided by the present invention.
The first embodiment of the device of measurement through hole silicon pattern provided by the present invention is as shown in Figure 3.In illumination path, comprise infrared laser light source 1, polarizer 2, field stop 3, illumination microscope group 4, aperture diaphragm 5 and speculum 6.The laser that infrared laser light source sends is through polarizer 2, thus obtaining the linearly polarized light of expectation polarization direction.Field stop 3 is placed in and measures the position of sample surface conjugation, and its effect is the size limiting silicon chip face illumination field of view, thus being illuminated to one or several TSV deep hole, field stop 3 requires size adjustable, to adapt to the measurement demand of different pore size and number of perforations.Generally, field stop 3 should just cover surveyed TSV deep hole, not little than deep hole, in order to avoid diffraction light can not reflect the real topography in hole, also can not be excessive, and in order to avoid introducing veiling glare.Aperture diaphragm 5 is placed on the position with image-forming objective lens 10 pupil face conjugation, and its effect is the ranges of incidence angles limiting incident light.In the case of ensureing enough illumination, the diameter selection of aperture diaphragm 5 is typically the smaller the better, so that inciding the light less parallel light on TSV deep hole, thus preferably distinguishing zero order light and senior light.With a speculum 6（Or spectroscope）By 90 degree of light deflection, thus being illuminated to TSV sample 8.
In embodiment 1, by the position of adjustment aperture diaphragm 5, make infrared laser from the non-etched surface vertical incidence of TSV sample 8, due to the strong penetration capacity to silicon chip for the infrared light, it will detect, in etched surface one side of TSV, the angular spectrum signal carrying TSV topographical information.
In imaging optical path, comprise image-forming objective lens 10, its effect is to be collected TSV angle of diffraction spectrum signal and be imaged onto on the test surface of ccd detector 12, on the back focal plane of image-forming objective lens 10, can select to place one and block diaphragm 11, but thus filter out do not carry the very strong zero order light of TSV hole information intensity it is also possible to select not placing diaphragm 11.
Measurement process is controlled by controller 13, and controller 13 needs to control the power of infrared laser 1, the polarization direction of polarizer 2, the motion of sample plummer 7, the signals collecting of CCD.
Computer 14 plays two effects, and the first transmits a signal to controller 13 thus carrying out real-time control to the related device in measurement process.Its two be the angular spectrum measuring signal is carried out Converse solved（Or coupling solves）, thus obtaining the 3D topographical information of TSV deep hole.
Second embodiment provided by the present invention is shown in Fig. 4（a）Shown.Different with first embodiment it is, under this embodiment, the position of aperture diaphragm 5 can be moved along the vertical direction of light, can be by the position of mobile aperture diaphragm 5, change the size of incidence angle, thus the angle of diffraction spectrum information under obtaining different incidence angles, more angular spectrum signal datas thus can be obtained, be conducive to improving certainty of measurement, especially improve the certainty of measurement of hole depth.Fig. 4（b）It is diffraction angular spectrum schematic diagram during oblique incidence.
As shown in Figure 5, incident light measures the angular spectrum signal in reflecting surface direction from TSV sample etched surface vertical incidence, ccd detector to 3rd embodiment provided by the present invention.Now block diaphragm 11 to play a part 90 ° of deflection optical propagation directions simultaneously and block zero order light.
In a kind of improvement embodiment on the basis of 3rd embodiment, the position of aperture diaphragm 5 can be moved along the vertical direction of light, can be by the position of mobile aperture diaphragm 5, change the size of incidence angle, thus the angle of diffraction spectrum information under obtaining different incidence angles, more angular spectrum signal datas thus can be obtained, be conducive to improving certainty of measurement.
Fourth embodiment provided by the present invention is as shown in Figure 6.Two ccd detectors are adopted in this embodiment, incident light is vertically incident from TSV etched surface, and in etched surface direction and non-etched surface direction, ccd detector 12a and 12b is installed simultaneously, as shown in Figure 6, the angular spectrum signal in reflecting surface direction and the angular spectrum signal of transmission direction so can be detected simultaneously, improve certainty of measurement.
In a kind of improvement embodiment on the basis of fourth embodiment, the position of aperture diaphragm 5 can be moved along the vertical direction of light, can be by the position of mobile aperture diaphragm 5, change the size of incidence angle, thus the angle of diffraction spectrum information under obtaining different incidence angles, more angular spectrum signal datas thus can be obtained, be conducive to improving certainty of measurement.
5th embodiment provided by the present invention is as shown in Figure 7.Introduce relaying light path 13 in this embodiment, reflection direction angular spectrum signal and transmission direction angular spectrum signal are all imaged on same CCD12a, the technique effect of this embodiment is to have saved equipment cost.
Compared with prior art, the technological merit of the present invention is：
Firstth, the present invention adopts angular spectrum to measure, and extracts and reflects hole depth, side wall, senior angular spectrum signal of aperture pattern simultaneously, these parameters can be measured simultaneously.
Secondth, the present invention is measured using infrared light it is only necessary to a kind of electromagnetic wave of wavelength, can preferably penetrate TSV sample, extracting TSV footer information, arbitrarily can changing incident angle, thus obtaining more metrical informations.
3rd, the present invention can gather reflecting surface deflection spectrum signal and transmission plane deflection spectrum signal simultaneously, it is possible to obtain the information of more reflection patterns.
4th, the present invention does not need to carry out vertical scanning, and measurement efficiency is higher.
The preferred embodiment of the simply present invention described in this specification, above example is only in order to illustrate technical scheme rather than limitation of the present invention.All those skilled in the art pass through the available technical scheme of logical analysis, reasoning, or a limited experiment under this invention's idea, all should be within the scope of the present invention.
Claims (13)
1. a kind of device of measurement through hole silicon topographical information is it is characterised in that include：
One infrared laser light source, for providing an illuminating bundle；
One lighting unit, for adjusting described illuminating bundle and exposing to the etched surface of a through hole silicon to be measured or non-etched surface；
One imaging detection unit, for detect described illuminating bundle expose to described through hole silicon to be measured front or back when produced angle of diffraction spectrum signal；
One processing unit, for obtaining the topographical information of described through hole silicon to be measured according to described angle of diffraction spectrum signal.
2. the device of measurement through hole silicon topographical information as claimed in claim 1 is it is characterised in that described angle of diffraction spectrum signal is carried out the Converse solved topographical information with the described through hole silicon to be measured of acquisition by described processing unit.
3. as claimed in claim 1 measurement through hole silicon topographical information device it is characterised in that described angle of diffraction spectrum signal and emulation experiment data are compared by described processing unit, to obtain the topographical information of described through hole silicon to be measured.
4. the device of measurement through hole silicon topographical information as claimed in claim 1 is it is characterised in that described illuminating bundle vertically or exposes to the etched surface of described through hole silicon to be measured or non-etched surface by certain incidence angle.
5. the device of measurement through hole silicon topographical information as claimed in claim 1, it is characterized in that, described lighting unit includes a polarizer, a field stop, one first light fixture, an aperture diaphragm, a speculum or spectroscope and the second light fixture successively by the direction that light is propagated.
6. the device of measurement through hole silicon topographical information as claimed in claim 5 is it is characterised in that described field stop moves along the position vertical with illuminating bundle.
7. the device of measurement through hole silicon topographical information as claimed in claim 5 is it is characterised in that described illuminating bundle blocks diaphragm to the etched surface of described through hole silicon to be measured from the second light fixture outgoing to one.
8. the device of measurement through hole silicon topographical information as claimed in claim 1 is it is characterised in that described imaging detection unit includes image-forming objective lens and the first ccd detector successively by the direction that light is propagated.
9. the device of measurement through hole silicon topographical information as claimed in claim 8 blocks diaphragm for blocking the zero order light of described angle of diffraction spectrum signal it is characterised in that placing one between described image-forming objective lens and described first ccd detector.
10. the device of measurement through hole silicon topographical information as claimed in claim 8, it is characterized in that, described imaging detection unit also includes one second ccd detector, and described the one the second ccd detectors are respectively used to detect the angle of diffraction spectrum signal in reflecting surface direction and the angle of diffraction spectrum signal of transmission direction.
The device of 11. measurement through hole silicon topographical information as claimed in claim 8, it is characterized in that, described imaging detection unit also includes a relay lens, for being all imaged the angle of diffraction spectrum signal of the angle of diffraction spectrum signal in reflecting surface direction and transmission direction to described first ccd detector.
A kind of 12. methods of measurement through hole silicon topographical information are it is characterised in that include：
Step one：Expose to the etched surface of a through hole silicon to be measured or non-etched surface using an infrared illumination light beam；
Step 2：Detect described illuminating bundle expose to described through hole silicon to be measured front or back when produced angle of diffraction spectrum signal；
Step 3：Described angle of diffraction spectrum signal is carried out Converse solved or compares to obtain the topographical information of described through hole silicon to be measured with emulation experiment data.
The method of 13. measurement through hole silicon topographical information as claimed in claim 12 is it is characterised in that emulation experiment data is according to electromagnetic wave information and material information acquisition in described step 3.
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| CN201510450706.2A CN106403808A (en) | 2015-07-29 | 2015-07-29 | Apparatus and method for measuring appearance of through silicon via |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109945783A (en) * | 2019-03-13 | 2019-06-28 | 北京交通大学 | Microspur measurement method based on Fraunhofer diffraction |
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Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Applicant after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Applicant before: Shanghai Micro Electronics Equipment Co., Ltd. |
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Application publication date: 20170215 |