CN106374907B - A kind of circuit exported using push-pull type - Google Patents
A kind of circuit exported using push-pull type Download PDFInfo
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- CN106374907B CN106374907B CN201510431779.7A CN201510431779A CN106374907B CN 106374907 B CN106374907 B CN 106374907B CN 201510431779 A CN201510431779 A CN 201510431779A CN 106374907 B CN106374907 B CN 106374907B
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Abstract
The embodiment of the invention provides a kind of circuits exported using push-pull type, to solve when current imput output circuit is without electricity, and when having electricity on the output solder joint of imput output circuit, the problem of imput output circuit can leak electricity.Driving signal control circuit in the circuit exported using push-pull type exports first control signal, to which p-type transistor driving circuit be turned off, and n-type transistor driving circuit is connected, and the shutdown of p-type transistor driving circuit is so that the path of the gate output signal of p-type transistor of the pre-driver circuitry into push-pull output structure is blocked, meeting is connected for n-type transistor driving circuit so that the n-type transistor in push-pull output structure turns off, to avoid the signals leakiness on output solder joint.
Description
Technical field
The present invention relates to technical field of integrated circuits more particularly to a kind of circuits exported using push-pull type.
Background technique
Fig. 1 is input and output (IO, Input Output) circuit using push-pull output, and the circuit structure is simple, wherein
Pre-driver circuitry is handled the data-signal DATA received, and be divided into two under the control of output enable signal OE
Road, wherein signals DP is transmitted to the grid of transistor PM1 all the way, another way signal DN is transmitted to the grid of transistor NM1, prime
The the first power supply VCC and earth signal GND that driving circuit provides form pressure difference, enable transistor PM1 and transistor NM1 at it
It works under the control for the signal that grid receives, after the drain electrode of transistor PM1 and the drain electrode of transistor NM1 link together,
It is connect with the output solder joint PAD of I/O circuit, wherein transistor PM1 and transistor NM1 constitutes push-pull output structure.
In I/O circuit shown in Fig. 1, when accumulating more electrostatic charge in output solder joint PAD, electrostatic discharge protection passes through
The parasitic diode D2 of the parasitic diode D1 or transistor NM1 of transistor PM1 is realized, wherein parasitic diode D1
Between the drain electrode of the substrate and transistor PM1 of transistor PM1, parasitic diode D2 is located at the substrate and crystal of transistor NM1
Between the drain electrode of pipe NM1.But the voltage of the signal in the output solder joint PAD in I/O circuit shown in FIG. 1 is no more than first
The voltage of power supply VCC, otherwise, the signal exported in solder joint PAD can be leaked to pre-driver circuitry, example by parasitic diode D1
Such as, exporting the signal in solder joint PAD is 5V, and the voltage of the first power supply VCC is 3.3V, at this point, the signal meeting in output solder joint PAD
The first power supply VCC is leaked to by parasitic diode D1.It also, is 3.3V when transistor PM1 and transistor NM1 is pressure resistance
When device, transistor PM1 and transistor NM1 can also have pressure-resistant risk.
I/O circuit shown in FIG. 1 there are aiming at the problem that, there has been proposed I/O circuits shown in Fig. 2 at present.It is shown in Fig. 2
In I/O circuit, transistor PM4 and transistor PM5 constitute floating trap (Floating Nwell) structure, when in output solder joint PAD
When the voltage of signal is lower than the voltage of the first power supply VCC, transistor PM4 conducting, transistor PM5 shutdown, at this point, transistor PM1
Substrate voltage and transistor PM2 substrate voltage be the first power supply VCC voltage；Letter in output solder joint PAD
Number voltage be higher than the first power supply VCC voltage when, transistor PM5 conducting, transistor PM4 shutdown, therefore, transistor PM1's
The voltage of the substrate of the voltage and transistor PM2 of substrate is the voltage for exporting the signal in solder joint PAD；Due to transistor PM1
Substrate voltage be equal to output solder joint PAD on signal voltage, that is, equal to transistor PM1 drain electrode voltage, because
This, the parasitic diode of transistor PM1 is shorted, that is to say, that when the voltage of the signal in output solder joint PAD is higher than the first electricity
When the voltage of source VCC, the signal exported in solder joint PAD will not be leaked on the first power supply VCC by parasitic diode D1.
Also, the transistor NM2 in Fig. 2 can reduce the pressure difference between the drain electrode and source electrode of transistor NM1, solve crystal
The pressure-resistant risk of pipe NM1.The voltage of signal of the transistor PM2 in output solder joint PAD in Fig. 2 is higher than the first power supply VCC's
It is connected when voltage, so that the grid voltage of transistor PM1 is equal to the voltage of the signal in output solder joint PAD, solves crystal
The pressure-resistant risk of pipe PM1.
That is, the voltage that I/O circuit shown in Fig. 2 solves the signal in output solder joint PAD is higher than the first power supply
Pressure resistance and electrical leakage problems when the voltage of VCC, but this solution is the feelings being under normal operating conditions based on I/O circuit
Condition, when I/O circuit is without electricity, i.e. when the voltage of the first power supply VCC is zero, if the voltage of the signal in output solder joint PAD is higher than first
The voltage of power supply VCC, then transistor PM2 is connected, at this point, the signal in output solder joint PAD can be driven by transistor PM2 and prime
Dynamic circuit is leaked on the first power supply VCC.
In conclusion current I/O circuit only can solve circuit when being in normal working condition, the letter on solder joint is exported
Number voltage be higher than pressure resistance and electrical leakage problems caused by the voltage of the first power supply, and when I/O circuit is without electricity, if output solder joint
On signal voltage be higher than the first power supply voltage, then I/O circuit can still have electrical leakage problems.
Summary of the invention
The embodiment of the invention provides a kind of circuits exported using push-pull type, to solve when I/O circuit is without electricity, and
When having electricity on the output solder joint of I/O circuit, the problem of I/O circuit can leak electricity.
Based on the above issues, a kind of circuit exported using push-pull type provided in an embodiment of the present invention, including prime driving
Circuit, the first p-type transistor, the first n-type transistor, floating trap biasing circuit, grid follow circuit, driving signal control circuit, p-type
Transistor driver circuit and n-type transistor driving circuit；
The source electrode of first p-type transistor receives the voltage for the first power supply that the pre-driver circuitry provides, described
The drain electrode of first p-type transistor is separately connected the drain electrode of first n-type transistor and the output of the imput output circuit is welded
Point, the source electrode of first n-type transistor receive the ground signalling that the pre-driver circuitry provides；The pre-driver circuitry
It is exported and is believed to the grid of first p-type transistor by the p-type transistor driving circuit according to the data-signal received
Number, and according to the data-signal received to the gate output signal of first n-type transistor；
Floating trap biasing circuit, for being selected among the voltage of signal and the voltage of first power supply of the output solder joint
Higher voltage is selected as trap bias voltage；The voltage of the substrate of first p-type transistor is equal to the trap bias voltage；
The grid follow circuit, when the voltage for the signal in the output solder joint is higher than the voltage of first power supply
Conducting, so that exporting the voltage of solder joint described in the voltage follow of the grid of first p-type transistor；The grid follow in circuit
Floating trap voltage be equal to the trap bias voltage；
The driving signal control circuit, for exporting first control signal when the voltage of first power supply is zero；
The first control signal controls the conducting of n-type transistor driving circuit for controlling the shutdown of p-type transistor driving circuit；Institute
The voltage for stating the floating trap in driving signal control circuit is equal to the trap bias voltage；
The p-type transistor driving circuit, for the shutdown when receiving the first control signal, so that the prime
Driving circuit stops the gate transport signal to first p-type transistor；Floating trap in the p-type transistor driving circuit
Voltage is equal to the trap bias voltage；
The n-type transistor driving circuit, for the conducting when receiving the first control signal, by the first n
The grounded-grid of transistor npn npn.
The beneficial effect of the embodiment of the present invention includes:
The circuit provided in an embodiment of the present invention exported using push-pull type, since driving signal control circuit is recommended in use
The circuit of formula output when use the voltage of the first power supply in the circuit of push-pull type output as zero, can export first without electricity
Signal is controlled, to control the shutdown of p-type transistor driving circuit, and controls the conducting of n-type transistor driving circuit；That is,
It is higher than the in the circuit using push-pull type output in the voltage of the signal of the output solder joint in the circuit using push-pull type output
The voltage of one power supply, so that when the current potential of the grid of the first p-type transistor follows the current potential of output solder joint, due to p-type crystalline substance
Body tube drive circuit shutdown, using push-pull type output circuit in pre-driver circuitry and the first p-type transistor grid it
Between can no longer transmit signal, therefore, export solder joint on signal circuit and pre-driver circuitry will not be followed to leak by grid
On first power supply；In addition, since n-type transistor driving circuit is connected, the grounded-grid of the first n-type transistor, that is,
Say that the first n-type transistor turns off, therefore, the signal exported on solder joint will not be revealed by the first n-type transistor.
Detailed description of the invention
Fig. 1 is one of the structural schematic diagram of I/O circuit for using push-pull output structure in the prior art；
Fig. 2 is in the prior art using the second structural representation of the I/O circuit of push-pull output structure；
Fig. 3 is one of the structural schematic diagram of circuit provided in an embodiment of the present invention using push-pull type output；
Fig. 4 is the second structural representation of the circuit provided in an embodiment of the present invention using push-pull type output；
Fig. 5 is the third structural representation of the circuit provided in an embodiment of the present invention using push-pull type output；
Fig. 6 is the four of the structural schematic diagram of the circuit provided in an embodiment of the present invention using push-pull type output.
Specific embodiment
Driving signal control circuit in circuit provided in an embodiment of the present invention using push-pull type output is recommended in use
When the circuit of formula output is without electricity, p-type transistor driving circuit can be turned off, to cut off pre-driver circuitry and the first p-type crystalline substance
Signal transmission pathway between the grid of body pipe avoids the conducting that circuit is followed due to grid, leads to the electricity using push-pull type output
Signal on the output solder joint on road follows circuit and pre-driver circuitry to be leaked in the circuit using push-pull type output by grid
The first power supply on；And driving signal control circuit can drive n-type transistor when the circuit using push-pull type output is without electricity
Dynamic circuit conducting, to so that the first n-type transistor turns off, avoiding the grounded-grid of the first n-type transistor using push-pull type
Signal on the output solder joint of the circuit of output is revealed by the first n-type transistor.
With reference to the accompanying drawings of the specification, to it is provided in an embodiment of the present invention it is a kind of using push-pull type output circuit it is specific
Embodiment is illustrated.
A kind of circuit exported using push-pull type provided in an embodiment of the present invention, as shown in figure 3, including the first p-type crystal
Pipe PM1, the first n-type transistor NM1, floating trap biasing circuit 31, grid follow circuit 32, driving signal control circuit 33, N-shaped crystal
Tube drive circuit 34, p-type transistor driving circuit 35 and pre-driver circuitry 36；
The source electrode of first p-type transistor PM1 receives the voltage for the first power supply VCC that pre-driver circuitry 36 provides, the first p
The drain electrode of transistor npn npn PM1 is separately connected the drain electrode of the first n-type transistor NM1 and the output solder joint PAD of imput output circuit, the
The source electrode of one n-type transistor NM1 receives pre-driver circuitry 36 and provides earth signal GND；Pre-driver circuitry 36 is according to receiving
Data-signal DATA by gate output signal of the p-type transistor driving circuit 35 to the first p-type transistor PM1, and according to
Gate output signal of the data-signal DATA received to the first n-type transistor NM1；
Floating trap biasing circuit 31, for being selected among the voltage of signal and the voltage of the first power supply VCC of output solder joint PAD
Higher voltage is selected as trap bias voltage；The voltage of the substrate of first p-type transistor PM1 is equal to trap bias voltage；In this way, working as
When exporting voltage of the voltage of the signal of solder joint PAD higher than the first power supply VCC, the voltage of the substrate of the first p-type transistor PM1 is
The voltage of the signal of solder joint PAD is exported, the parasitic diode in the first p-type transistor PM1 will be shorted, and be exported in solder joint PAD
Signal will not be leaked on the first power supply VCC by the parasitic diode in the first p-type transistor PM1.
Grid follow circuit 32, for leading when exporting the voltage of signal of solder joint PAD and being higher than the voltage of the first power supply VCC
It is logical, so that the voltage of the voltage follow output solder joint PAD of the grid of the first p-type transistor PM1, i.e. the first p-type transistor PM1's
The voltage of grid is equal to the voltage of output solder joint PAD；Grid follow the voltage of the floating trap in circuit 32 to be equal to the trap bias voltage,
So that grid follow the voltage highest applied on the substrate of the p-type transistor in circuit 32, the source electrode of the p-type transistor is avoided
On signal by parasitic diode leakage to substrate between the drain and the substrate, and avoid in the drain electrode of p-type transistor
Signal by colonizing on the diode leakage to substrate between drain electrode and substrate；
Driving signal control circuit 33, for the voltage of the first power supply VCC be zero or close to zero, that is, first electricity
When source VCC does not power, first control signal is exported；The first control signal is for controlling the pass of p-type transistor driving circuit 35
It is disconnected, and control the conducting of n-type transistor driving circuit 34；It is inclined that the voltage of floating trap in driving signal control circuit 33 is equal to the trap
Voltage is set, so that the voltage highest applied on the substrate of the p-type transistor in driving signal control circuit 33, avoids the p
The signal on signal and drain electrode on the source electrode of transistor npn npn is leaked on substrate by parasitic diode；
P-type transistor driving circuit 35, for the shutdown when receiving the first control signal, so that prime driving electricity
Road 36 stops the gate transport signal to the first p-type transistor PM1, in this way, exporting solder joint even if grid follow circuit 32 to be connected
Signal on PAD will not follow circuit 32 and pre-driver circuitry 36 to leak on the first power supply VCC by grid；P-type crystal
The voltage of floating trap in tube drive circuit 35 is equal to the trap bias voltage, so that the p in p-type transistor driving circuit 35
The voltage highest applied on the substrate of transistor npn npn avoids the signal on the signal and drain electrode on the source electrode of the p-type transistor logical
On superparasitization diode leakage to substrate；
N-type transistor driving circuit 34, for the conducting when receiving the first control signal, by the first N-shaped crystal
The grounded-grid of pipe NM1, so that the first n-type transistor NM1 is turned off, the signal exported in solder joint PAD cannot pass through the first n
Transistor npn npn NM1 leakage.
Optionally, grid follow circuit 32 to be also used to: being lower than the first power supply VCC's in the voltage of the signal of output solder joint PAD
It is turned off when voltage, so that the voltage of the grid of the first p-type transistor PM1 and the voltage of output solder joint PAD are mutually indepedent.
Optionally, p-type transistor driving circuit 35 is also used to: being to set voltage (such as in the voltage of the first power supply VCC
It is connected when 3.3V), enables pre-driver circuitry 36 to the gate output signal of the first p-type transistor PM1.
Therefore, p-type transistor driving circuit 35 is to work normally in the circuit using push-pull type output, i.e. the first power supply
When the voltage of VCC is setting voltage, enable pre-driver circuitry 36 to the gate output signal of the first p-type transistor PM1,
And when the circuit using push-pull type output is without electricity, pre-driver circuitry 36 is exported to the grid of the first p-type transistor PM1 and is believed
Number pathway disruption.
Optionally, driving signal control circuit 33 is also used to: when the voltage of the first power supply VCC is setting voltage,
Export second control signal；The second control signal is turned off for controlling the n-type transistor driving circuit 34.Namely
It says, first control signal and second control signal are the signal that driving signal control circuit 33 exports, which is exported actually
Control signal is determined by the power supply of the first power supply VCC.
Optionally, n-type transistor driving circuit 34 is also used to: the shutdown when receiving the second control signal, so that
Pre-driver circuitry 36 can be to the gate output signal of the first n-type transistor NM1.
Therefore, the signal that driving signal control circuit 33 exports controls p-type transistor driving circuit 35 and N-shaped crystal
Tube drive circuit 34 is in the circuit that the circuit using push-pull type output works normally and is exported using push-pull type without both electric shapes
Switch between state.
N-type transistor driving circuit 34 is will be when the circuit using push-pull type output works normally, so that prime drives
Circuit 36 can to the gate output signal of the first n-type transistor NM1, and using push-pull type output circuit without electricity when, will
The grounded-grid of first n-type transistor NM1, it is ensured that the signal in output solder joint PAD will not be let out by the first n-type transistor NM1
Dew.
In circuit using push-pull type output shown in Fig. 3, pre-driver circuitry 36 also receives enable signal OE.
Further, the circuit provided in an embodiment of the present invention using push-pull type output is as shown in figure 4, floating trap biasing circuit
31 include the second p-type transistor PM2 and third p-type transistor PM3；The source electrode of second p-type transistor PM2 receives the first power supply
The voltage of VCC, the grid connection output solder joint PAD of the second p-type transistor PM2；
The drain electrode connection output solder joint PAD of third p-type transistor PM3, the grid of third p-type transistor PM3 receive first
The voltage of power supply VCC；
The drain electrode of second p-type transistor PM2, the substrate of the second p-type transistor PM2, third p-type transistor PM3 source electrode
It is connected with the substrate of third p-type transistor PM3；The voltage of the drain electrode of second p-type transistor PM2 is the trap bias voltage.
When the voltage for exporting the signal in solder joint PAD is higher than the voltage of the first power supply VCC, the second p-type transistor PM2 is closed
Disconnected, third p-type transistor PM3 conducting, therefore, trap bias voltage are equal to the voltage of the signal in output solder joint PAD；When output is welded
When the voltage of signal on point PAD is lower than the voltage of the first power supply VCC, the second p-type transistor PM2 conducting, third p-type transistor
PM3 shutdown, therefore, trap bias voltage is equal to the voltage of the first power supply VCC.
In Fig. 4, driving signal control circuit 33 includes the 5th p-type transistor PM5 and the second n-type transistor NM2；5th
The source electrode connection output solder joint PAD of p-type transistor PM5, the grid of the 5th p-type transistor PM5 receive the electricity of the first power supply VCC
Pressure, the drain electrode of the second n-type transistor NM2 of drain electrode connection of the 5th p-type transistor PM5, the substrate of the 5th p-type transistor PM5 are
Floating trap in driving signal control circuit 33, that is to say, that the voltage of the substrate of the 5th p-type transistor PM5 is trap bias voltage；
The grid of second n-type transistor NM2 receives the voltage of the first power supply VCC, the source electrode ground connection of the second n-type transistor NM2；Wherein,
The signal of the drain electrode of 5th p-type transistor PM5 is the signal of drive control circuit output, i.e. first control signal or the second control
Signal processed.
When the circuit using push-pull type output works normally, i.e., the voltage of the first power supply VCC is setting voltage, the 2nd n
Transistor npn npn NM2 conducting, the 5th p-type transistor PM5 shutdown, therefore, the signal of the drain electrode of the 5th p-type transistor PM5 are ground letter
Number, that is to say, that second control signal is earth signal；When using push-pull type output circuit without electricity and exporting in solder joint PAD has
When electricity (voltage of the signal i.e. in output solder joint PAD is higher than zero), the second n-type transistor NM2 shutdown, the 5th p-type transistor PM5
Conducting, therefore, the signal of the drain electrode of the 5th p-type transistor PM5 are the signal exported in solder joint PAD, that is to say, that the first control
Signal is the signal exported in solder joint PAD.
In Fig. 4, it includes the 6th p-type transistor PM6 that grid, which follow circuit 32,；The source electrode connection the of 6th p-type transistor PM6
The grid of one p-type transistor PM1, the grid of the 6th p-type transistor PM6 receive the voltage of the first power supply VCC, the 6th p-type crystal
The drain electrode connection output solder joint PAD of pipe PM6；The substrate of 6th p-type transistor PM6 is that grid follow the floating trap in circuit 32, also
It is to say, the voltage of the substrate of the 6th p-type transistor PM6 is trap bias voltage, in this way the voltage of the signal in output solder joint PAD
When voltage higher than the first power supply VCC, the parasitic diode of the 6th p-type transistor PM6 can be shorted.
When the voltage for exporting the signal in solder joint PAD is higher than the voltage of the first power supply VCC, the 6th p-type transistor PM6 is led
Logical, the voltage of the grid of the first p-type transistor PM1 is equal to the voltage of the signal in output solder joint PAD；When in output solder joint PAD
Signal voltage be lower than the first power supply VCC voltage when, the 6th p-type transistor PM6 shutdown, the grid of the first p-type transistor PM1
Pole receives the signal that pre-driver circuitry 36 exports.
In Fig. 4, p-type transistor driving circuit 35 includes the 7th p-type transistor PM7 and third n-type transistor NM3；
The grid of 7th p-type transistor PM7 receives the signal that driving signal control circuit 33 exports, the 7th p-type transistor
The drain electrode of PM7 receives the signal that pre-driver circuitry 36 is exported to the grid of the first p-type transistor PM1, the 7th p-type crystal
The source electrode of pipe PM7 connects the grid of the first p-type transistor PM1, and the substrate of the 7th p-type transistor PM7 is p-type transistor driving electricity
Floating trap in road 35, the i.e. voltage of the substrate of the 7th p-type transistor PM7 are trap bias voltage；
The grid of third n-type transistor NM3 receives the voltage of the first power supply VCC, and the drain electrode of third n-type transistor NM3 connects
Receive the signal that pre-driver circuitry 36 is exported to the grid of the first p-type transistor PM1, the source electrode connection of third n-type transistor NM3
The grid of first p-type transistor PM1.
Therefore, when the circuit using push-pull type output works normally, i.e., the voltage of the first power supply VCC is setting voltage,
Third n-type transistor NM3 conducting, the 7th p-type transistor PM7 shutdown, pre-driver circuitry 36 is to the first p-type transistor PM1's
The path of gate transport signal is smooth；When the circuit using push-pull type output is without electricity, third n-type transistor NM3 shutdown,
Driving signal control circuit 33 exports first control signal, i.e. signal in output solder joint PAD, this will lead to the 7th p-type crystal
Pipe PM7 shutdown, therefore, pre-driver circuitry 36 is blocked to the path of the gate transport signal of the first p-type transistor PM1.
In Fig. 4, n-type transistor driving circuit 34 includes the 4th n-type transistor NM4；The grid of 4th n-type transistor NM4
Pole receives the signal that driving signal control circuit 33 exports, and the drain electrode of the 4th n-type transistor NM4 connects the first n-type transistor NM1
Grid, the 4th n-type transistor NM4 source electrode ground connection.
When the grid of the 4th n-type transistor NM4 receives first control signal, the 4th n-type transistor NM4 conducting, this meeting
So that the grounded-grid of the first n-type transistor NM1 avoids in output solder joint PAD so that the first n-type transistor NM1 is turned off
Signal pass through the 4th n-type transistor NM4 reveal；When the grid of the 4th n-type transistor NM4 receives first control signal, the
Four n-type transistor NM4 shutdown, the grid of the first n-type transistor NM1 receive the signal that pre-driver circuitry 36 exports.
Optionally, the circuit provided in an embodiment of the present invention using push-pull type output is as shown in figure 5, floating trap therein biases
Circuit 31 includes first diode D1 and the second diode D2；The anode of first diode D1 receives the voltage of the first power supply VCC,
The anode connection output solder joint PAD of second diode D2；The cathode of the cathode of first diode D1 and the second diode D2 are connected,
The voltage of the cathode of first diode D1 is the trap bias voltage.
When the voltage of the first power supply VCC is higher than the voltage of the signal in output solder joint PAD, first diode D1 conducting,
Second diode D2 cut-off, trap bias voltage are the voltage of the first power supply VCC；When the voltage of the first power supply VCC is lower than output weldering
When the voltage of the signal on point PAD, first diode D1 cut-off, the second diode D2 conducting, trap bias voltage is output solder joint
The voltage of signal on PAD.
Optionally, the circuit provided in an embodiment of the present invention using push-pull type output is as shown in fig. 6, floating trap biasing circuit 31
Including third diode D3 and the 4th p-type transistor PM4；The anode of third diode D3 and the grid of the 4th p-type transistor PM4
Receive the voltage of the first power supply VCC；The cathode of third diode D3, the source electrode of the 4th p-type transistor PM4 and the 4th p-type are brilliant
The substrate of body pipe PM4 is connected；The drain electrode connection output solder joint PAD of 4th p-type transistor PM4；The cathode of third diode D3
Voltage is the trap bias voltage.
When the voltage of the first power supply VCC is higher than the voltage of the signal in output solder joint PAD, third diode D3 conducting,
4th p-type transistor PM4 shutdown, and the parasitic diode cut-off of the 4th p-type transistor PM4, trap bias voltage are the first power supply
The voltage of VCC；When voltage of the voltage of the first power supply VCC lower than the signal in output solder joint PAD, third diode D3 is cut
Only, the parasitic diode conducting of the 4th p-type transistor PM4, trap bias voltage are the voltage for exporting the signal in solder joint PAD.
During power supply electrifying, output solder joint PAD is the circuit that Fig. 4, Fig. 5 or shown in fig. 6 are exported using push-pull type
The current potential of high-impedance state, i.e. output solder joint PAD is uncertain, the first p-type transistor PM1 and the first n-type transistor NM1 be size very
Big pipe, export the current potential of solder joint PAD by the first p-type transistor PM1 leakage current and the first n-type transistor NM1 electric leakage
Mobile equilibrium determines that the current potential is lower than the voltage of the first power supply VCC, this meeting is so that trap bias voltage is the voltage of the first power supply VCC.
In normal work, the voltage of the first power supply VCC is predeterminated voltage, third n-type transistor NM3 conducting, driving signal control electricity
It is Vb that road 33, which exports second control signal, is earth signal, therefore, the 7th p-type transistor PM7 conducting, the 4th n-type transistor NM4
Shutdown, pre-driver circuitry 36 can output signal to the grid of the first p-type transistor PM1 and the grid of the first n-type transistor NM1
Pole.
When the circuit that Fig. 4, Fig. 5 or shown in fig. 6 are exported using push-pull type is without electricity, i.e. the voltage of the first power supply VCC is zero
When, if the current potential of output solder joint PAD is 0 or close to 0, there is no electrical leakage problems.If exported in solder joint PAD
The voltage of signal is predeterminated voltage, then trap bias voltage is the voltage for exporting the signal in solder joint PAD, driving signal control electricity
Road 33 exports first control signal, and the voltage of first control signal is the voltage for exporting the signal in solder joint PAD, therefore, the 7th p
Transistor npn npn PM7 shutdown, the 4th n-type transistor NM4 conducting, and since the circuit using push-pull type output is without electricity, third
N-type transistor NM3 shutdown, this meeting is so that the signal between pre-driver circuitry 36 and the grid of the first p-type transistor PM1 transmits
Path is blocked, and therefore, the signal exported in solder joint PAD will not follow circuit 32 and pre-driver circuitry 36 to be leaked to by grid
On first power supply, also, the signal exported in solder joint PAD will not be revealed by the first n-type transistor NM1.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, module or stream in attached drawing
Journey is not necessarily implemented necessary to the present invention.
It will be appreciated by those skilled in the art that the module in device in embodiment can describe be divided according to embodiment
It is distributed in the device of embodiment, corresponding change can also be carried out and be located in one or more devices different from the present embodiment.On
The module for stating embodiment can be merged into a module, can also be further split into multiple submodule.
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. a kind of circuit exported using push-pull type, which is characterized in that including pre-driver circuitry, the first p-type transistor, first
N-type transistor, floating trap biasing circuit, grid follow circuit, driving signal control circuit, p-type transistor driving circuit and N-shaped crystal
Tube drive circuit；
The source electrode of first p-type transistor receives the voltage for the first power supply that the pre-driver circuitry provides, the first p
The drain electrode of transistor npn npn is separately connected the drain electrode of first n-type transistor and uses the imput output circuit of push-pull type output
Solder joint is exported, the source electrode of first n-type transistor receives the ground signalling that the pre-driver circuitry provides；The prime is driven
Dynamic circuit is according to the data-signal received by the p-type transistor driving circuit to the grid of first p-type transistor
Output signal, and according to the data-signal received to the gate output signal of first n-type transistor；
Floating trap biasing circuit, for from selection among the voltage of signal and the voltage of first power supply of the output solder joint compared with
High voltage is as trap bias voltage；The voltage of the substrate of first p-type transistor is equal to the trap bias voltage；
The grid follow circuit, and the voltage for the signal in the output solder joint is led when being higher than the voltage of first power supply
It is logical, so that exporting the voltage of solder joint described in the voltage follow of the grid of first p-type transistor；The grid follow in circuit
The voltage of floating trap is equal to the trap bias voltage；
The driving signal control circuit, for exporting first control signal when the voltage of first power supply is zero；It is described
First control signal controls the conducting of n-type transistor driving circuit for controlling the shutdown of p-type transistor driving circuit；The drive
The voltage of floating trap in dynamic signal control circuit is equal to the trap bias voltage；
The p-type transistor driving circuit, for the shutdown when receiving the first control signal, so that the prime drives
Circuit stops the gate transport signal to first p-type transistor；The voltage of floating trap in the p-type transistor driving circuit
Equal to the trap bias voltage；
The n-type transistor driving circuit, it is for the conducting when receiving the first control signal, first N-shaped is brilliant
The grounded-grid of body pipe.
2. circuit as described in claim 1, which is characterized in that the grid follow circuit to be also used to:
It is turned off when exporting the voltage of signal of solder joint and being lower than the voltage of the first power supply, so that the grid of first p-type transistor
The voltage of pole and the voltage of output solder joint are mutually indepedent.
3. circuit as described in claim 1, which is characterized in that the p-type transistor driving circuit is also used to:
It is connected when the voltage of first power supply is setting voltage, enables the pre-driver circuitry to the first p
The gate output signal of transistor npn npn.
4. circuit as described in claim 1, which is characterized in that the driving signal control circuit is also used to:
When the voltage of first power supply is setting voltage, second control signal is exported；The second control signal is for controlling
Make the n-type transistor driving circuit shutdown.
5. circuit as claimed in claim 4, which is characterized in that the n-type transistor driving circuit is also used to:
The shutdown when receiving the second control signal enables the pre-driver circuitry to the first N-shaped crystal
The gate output signal of pipe.
6. circuit as described in claim 1, which is characterized in that the floating trap biasing circuit includes the second p-type transistor and the
Three p-type transistors；
The source electrode of second p-type transistor receives the voltage of first power supply, the grid connection of second p-type transistor
The output solder joint；
The drain electrode of the third p-type transistor connects the output solder joint, and the grid of the third p-type transistor receives described the
The voltage of one power supply；
The drain electrode of second p-type transistor, the substrate of second p-type transistor, the third p-type transistor source electrode and
The substrate of the third p-type transistor is connected；The voltage of the drain electrode of second p-type transistor is the trap bias voltage.
7. circuit as described in claim 1, which is characterized in that the floating trap biasing circuit includes first diode and the two or two
Pole pipe；
The anode of the first diode receives the voltage of first power supply, and the anode connection of second diode is described defeated
Solder joint out；
The cathode of the first diode is connected with the cathode of second diode, the voltage of the cathode of the first diode
For the trap bias voltage.
8. circuit as described in claim 1, which is characterized in that the floating trap biasing circuit includes third diode and the 4th p
Transistor npn npn；
The anode of the third diode and the grid of the 4th p-type transistor receive the voltage of first power supply；
The substrate phase of the cathode of the third diode, the source electrode of the 4th p-type transistor and the 4th p-type transistor
Even；Wherein, the voltage of the cathode of the third diode is the trap bias voltage；
The drain electrode of 4th p-type transistor connects the output solder joint.
9. circuit as described in claim 1 or 4, which is characterized in that the driving signal control circuit includes the 5th p-type crystal
Pipe and the second n-type transistor；
The source electrode of 5th p-type transistor connects the output solder joint, and the grid of the 5th p-type transistor receives described the
The voltage of one power supply, the drain electrode of the 5th p-type transistor connect the drain electrode of second n-type transistor, and the 5th p-type is brilliant
The substrate of body pipe is the floating trap in the driving signal control circuit；
The grid of second n-type transistor receives the voltage of first power supply, and the source electrode of second n-type transistor connects
Ground；
Wherein, the signal of the drain electrode of the 5th p-type transistor is the signal of driving signal control circuit output.
10. circuit as claimed in claim 1 or 2, which is characterized in that it includes the 6th p-type transistor that the grid, which follow circuit,；
The source electrode of 6th p-type transistor connects the grid of first p-type transistor, the grid of the 6th p-type transistor
Pole receives the voltage of first power supply, and the drain electrode of the 6th p-type transistor connects the output solder joint；
The substrate of 6th p-type transistor is that the grid follow the floating trap in circuit.
11. claim 1,3 and 4 it is any as described in circuit, which is characterized in that the p-type transistor driving circuit includes the
Seven p-type transistors and third n-type transistor；
The grid of 7th p-type transistor receives the signal of the driving signal control circuit output, the 7th p-type crystal
The drain electrode of pipe receives the signal that the pre-driver circuitry is exported to the grid of first p-type transistor, and the 7th p-type is brilliant
The source electrode of body pipe connects the grid of first p-type transistor, and the substrate of the 7th p-type transistor is the p-type transistor
Floating trap in driving circuit；
The grid of the third n-type transistor receives the voltage of first power supply, and the drain electrode of the third n-type transistor receives
The source electrode of the signal that the pre-driver circuitry is exported to the grid of first p-type transistor, the third n-type transistor connects
Connect the grid of first p-type transistor.
12. claim 1,4 and 5 it is any as described in circuit, which is characterized in that the n-type transistor driving circuit includes the
Four n-type transistors；
The grid of 4th n-type transistor receives the signal of the driving signal control circuit output, the 4th N-shaped crystal
The drain electrode of pipe connects the grid of first n-type transistor, the source electrode ground connection of the 4th n-type transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510431779.7A CN106374907B (en) | 2015-07-21 | 2015-07-21 | A kind of circuit exported using push-pull type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510431779.7A CN106374907B (en) | 2015-07-21 | 2015-07-21 | A kind of circuit exported using push-pull type |
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| CN106374907A CN106374907A (en) | 2017-02-01 |
| CN106374907B true CN106374907B (en) | 2019-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510431779.7A Active CN106374907B (en) | 2015-07-21 | 2015-07-21 | A kind of circuit exported using push-pull type |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111835331B (en) * | 2019-04-16 | 2024-02-09 | 中芯国际集成电路制造(上海)有限公司 | Reference voltage driver |
| CN111030671B (en) * | 2019-12-02 | 2023-08-29 | 珠海妙存科技有限公司 | Output circuit module and anti-leakage push-pull circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936456A (en) * | 1996-12-10 | 1999-08-10 | Fujitsu Limited | Output driver circuit in semiconductor device |
| TW200814514A (en) * | 2006-09-07 | 2008-03-16 | Ee Solutions Inc | Input/output device with high-voltage toleration |
| CN101552605A (en) * | 2009-05-19 | 2009-10-07 | 北京时代民芯科技有限公司 | An interface circuit capable of tolerating high voltage input |
| CN104716938A (en) * | 2013-12-16 | 2015-06-17 | 深圳市国微电子有限公司 | Grating following input and output circuit |
-
2015
- 2015-07-21 CN CN201510431779.7A patent/CN106374907B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5936456A (en) * | 1996-12-10 | 1999-08-10 | Fujitsu Limited | Output driver circuit in semiconductor device |
| TW200814514A (en) * | 2006-09-07 | 2008-03-16 | Ee Solutions Inc | Input/output device with high-voltage toleration |
| CN101552605A (en) * | 2009-05-19 | 2009-10-07 | 北京时代民芯科技有限公司 | An interface circuit capable of tolerating high voltage input |
| CN104716938A (en) * | 2013-12-16 | 2015-06-17 | 深圳市国微电子有限公司 | Grating following input and output circuit |
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| CN106374907A (en) | 2017-02-01 |
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