CN106372350B - Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property - Google Patents
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Abstract
Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property, for the solar concentration photovoltaic system using two-dimentional condenser, it is discrete in the progress of the direction of crystal silicon photovoltaic cell uneven distribution along Photospot solar stream, form multiple discrete units, according to the equivalent circuit of polysilicon photovoltaic cells, form the two-dimentional multiple diode computation model of multiple discrete unit parallel connections, discrete two-dimentional Photospot solar circulation is changed to short circuit current and is correspondingly arranged into the discrete unit constant-current source of two-dimentional multiple diode computation model, then graphical programs are established using iterative method or Multisim software and calculates two-dimentional concentrating photovoltaic photo-thermal system output electric energy, to realize the influence for assessing the two-dimentional condenser optically focused uniformity to concentration photovoltaic system.
Description
Technical field
The invention belongs to solar concentrating photovoltaic research field, it is related to a kind of two-dimentional condenser of assessment to concentration photovoltaic system
The calculation method that electrical property influences.
Background technique
In solar concentration photovoltaic system, condenser optics performance has a great impact to system electrical property, condenser
Optical property include that condenser optics efficiency and the condenser convergence aspect of the solar energy stream uniformity two, optical efficiency characterization are poly-
" amount " of light device optically focused, and " matter " of optically focused uniformity characterization condenser optically focused, the often condenser of same optical efficiency, by
It is different in its optically focused uniformity, enable the output electric property of system different；Due to the presence of the optically focused uniformity, excessively high office
In the irradiation to photovoltaic cell of portion's solar energy stream, so that photovoltaic cell local current is excessively high, lead to photovoltaic cell local I2R loss increases
Add, so that the electric energy that photovoltaic cell generates is consumed in local excessive, to reduce the electrical property of entire concentration photovoltaic system, separately
Outside, it since excessively high local solar energy stream irradiates, so that resistance value is relatively excessively high in the area for photovoltaic cell, is not able to satisfy
The work of conveying electric energy is undertaken under corresponding high current density, and then leads to photovoltaic cell local I2R loss increases, to reduce
The electrical property of entire concentration photovoltaic system.In consideration of it, being needed for the solar concentration photovoltaic system using two-dimentional condenser
A kind of method calculates and assesses influence of the Photospot solar stream uniformity to system electrical property.
Summary of the invention
For the solar concentration photovoltaic system using two-dimentional condenser, it is an object of that present invention to provide a kind of assessment two dimensions
The calculation method that condenser influences concentration photovoltaic system electrical property.
To achieve the above object, the technical solution adopted by the present invention are as follows:
Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property, comprising the following steps:
1) it connects to form crystal silicon photovoltaic cell group by welding between several monomer crystal silicon photovoltaic cells, in crystalline silicon
Xoy coordinate system is established on photovoltaic cell group lighting surface, monomer crystal silicon photovoltaic cell is connected in series along the y-axis direction, serial number
For m；Welding along the y-axis direction has been correspondingly formed welding circuit, amounts to l welding circuit, the equivalent electricity of each welding circuit
Resistance is Rh,s；
2) at crystal silicon photovoltaic cell group both ends, l welding circuit connection is got up by convergent belt, convergent belt includes adjacent
The convergent belt of convergent belt and external circuits between welding forms convergent belt circuit, the convergent belt between adjacent welding
Equivalent resistance is Rhl,s, the equivalent resistance of the convergent belt of external circuits is Rhl,o；
3) two-dimentional condenser prefocus stream is on crystal silicon photovoltaic cell group lighting surface, along the optically focused energy-flux density of y-axis
It is evenly distributed, is unevenly distributed along the optically focused energy-flux density of x-axis；
4) crystal silicon photovoltaic cell group is discrete along the x-axis direction, form n discrete unit, the crystalline substance of each discrete unit
Body Silicon photrouics group series resistance is Rs,i, crystal silicon photovoltaic cell group is discrete along the y-axis direction；
5) according to crystal silicon photovoltaic cell equivalent circuit, for a discrete unit in step 4), formation one is discrete
Unit equivalent circuit, a discrete unit equivalent circuit include: discrete unit diode, discrete unit constant-current source Isc,iAnd from
The crystal silicon photovoltaic cell group series resistance R of throwaway members,i, the connection type of discrete unit equivalent circuit are as follows: two pole of discrete unit
Manage it is parallel with one another with discrete unit constant-current source, then with the crystal silicon photovoltaic cell group series resistance R of discrete units,iSeries connection；
6) n discrete unit is formed into n discrete unit equivalent circuit according to the connection type in step 5), according to parallel connection
Mode be connected with each other this n discrete unit equivalent circuit；
7) on the basis of the n discrete unit equivalent circuit in step 6) is parallel with one another, corresponding welding and convergent belt exist
Polysilicon photovoltaic cells group present position, serial or parallel connection enter the equivalent resistance R of welding circuith,s, confluence between adjacent welding
The equivalent resistance R of bandhl,sWith the equivalent resistance R of the convergent belt of external circuitshl,o；
The equivalent resistance R of welding circuith,sThe equivalent resistance R of convergent belt between adjacent weldinghl,sAfter series connection, then with
The equivalent resistance R of welding circuith,sAfter parallel connection, finally with the equivalent resistance R of the convergent belt of external circuitshl,oSeries connection；
8) on the basis of step 7), IV analyzer is connected into, forms a closed circuit, it is poly- to complete two-dimentional condenser
The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under light；
9) for the discrete unit diode of the discrete unit equivalent circuit in step 5), it is anti-that discrete unit diode is set
To saturation current I0,i, discrete unit Diode Ideality Factor AiAnd discrete unit diode temperature Ti:
10) to the discrete unit constant-current source I in the discrete unit equivalent circuit in step 5)sc,iSetting:
11) two-dimentional concentration photovoltaic system output electric energy is calculated, completes two-dimentional condenser to concentration photovoltaic system electrical property
Assessment.
A further improvement of the present invention lies in that reversed saturation electricity of the discrete unit diode at certain temperature T in step 9)
Flow I0,i_T, it is equal to monomer crystal silicon photovoltaic cell reverse saturation current I at temperature T0_TWith the quotient of discrete unit quantity n；
Discrete unit Diode Ideality Factor Ai, it is equal to the sum of m monomer crystal silicon photovoltaic cell ideal factor A；
Discrete unit diode temperature TiFor the mean temperature of the crystal silicon photovoltaic cell group of the discrete unit.
A further improvement of the present invention lies in that for the discrete unit constant current in discrete unit equivalent circuit in step 10)
Source Isc, detailed process is as follows for the setting of i:
At standard conditions, the condition of the status of criterion are as follows: total solar irradiance Gt,stco=1000W/m2, crystalline silicon photovoltaic
Battery temperature Tstco=25 DEG C；Monomer crystal silicon photovoltaic cell short circuit current is Isc,stco；Monomer crystal silicon photovoltaic cell short circuit electricity
The temperature coefficient of stream is α；
Total solar irradiance of the two-dimentional condenser Photospot solar stream in step 5) on the lighting surface of discrete unit be
Gt,i, discrete unit diode temperature is Ti；
Discrete unit constant-current source Isc,iValue calculate and be arranged according to following formula:
Isc,i=Isc,stcoGt,i/Gt,stco(1+α(Ti-Tstco))。
A further improvement of the present invention lies in that being calculated by the following method in step 11): utilizing volt-ampere of characteristic diode
Mathematic(al) representation and Kirchhoff's law simultaneously solve two-dimentional concentration photovoltaic system output electric energy by Newton iteration method, or utilize
Multisim software is established graphical programs and is calculated.
Compared with prior art, the invention has the following beneficial effects: utilize method of the invention, it will be able to assess non-equal
Influence of the evenness to system output electric energy；Because when hot spot is uniform, output electric energy is a value, and hot spot is uneven, output
Be another value, this method that can propose through the invention this when is assessed, when non-uniform
Output electric property can with it is uniform when output electric property can comparison, to evaluate the non-homogeneous influence to electrical property.Therefore certain
It wants discrete, if not discrete, influence of the non-uniformity to electrical property cannot be evaluated.Because not discrete, it is non-homogeneous with it is uniform
Hot spot, be all identical energy value, the influence for evaluating Irregular facula to electrical property of just having no idea this when.This hair
The bright solar concentration photovoltaic system for using two-dimentional condenser, along Photospot solar stream in crystal silicon photovoltaic cell unevenness
The direction of even distribution carries out discrete, forms multiple discrete units, according to the equivalent circuit of crystal silicon photovoltaic cell, formed it is multiple from
The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under throwaway member two-dimentional condenser optically focused in parallel, will be discrete
The crystal silicon photovoltaic cell group that two-dimentional Photospot solar circulation is changed to short circuit current and is correspondingly arranged under two-dimentional condenser optically focused
Two-dimentional multiple diode equivalent circuit discrete unit constant-current source in, figure is then established using iterative method or Multisim software
Shape program calculates two-dimentional concentration photovoltaic system output electric energy, to realize the two-dimentional condenser optically focused uniformity of assessment to optically focused
The influence of photovoltaic system.The present invention provides a kind of concentration photovoltaic system two dimension multiple diode computation model, and it is poly- can to assess two dimension
The light device optically focused uniformity influences concentration photovoltaic system electrical property.
Detailed description of the invention
Fig. 1 is the crystal silicon photovoltaic cell group and discrete way schematic diagram in the case of two-dimentional condenser optically focused.
Fig. 2 is the two-dimentional multiple diode equivalent circuit of the crystal silicon photovoltaic cell group under two-dimentional condenser optically focused.
Specific embodiment
The present invention will be further described below with reference to the drawings.
Calculating step of the invention are as follows:
1) it referring to Fig. 1, connects to form crystal silicon photovoltaic cell group by welding between several monomer crystal silicon photovoltaic cells,
Xoy coordinate system is established on crystal silicon photovoltaic cell group lighting surface, monomer crystal silicon photovoltaic cell is connected in series along the y-axis direction,
Serial number is m；Welding along the y-axis direction has been correspondingly formed welding circuit, amounts to l welding circuit, each welding circuit
Equivalent resistance be Rh,s；
2) at crystal silicon photovoltaic cell group both ends, l welding circuit connection is got up by convergent belt, convergent belt includes adjacent
The convergent belt of convergent belt and external circuits between welding forms convergent belt circuit, the convergent belt between adjacent welding
Equivalent resistance is Rhl,s, the equivalent resistance of the convergent belt of external circuits is Rhl,o；
3) two-dimentional condenser prefocus stream is on crystal silicon photovoltaic cell group lighting surface, along the optically focused energy-flux density of y-axis
It is evenly distributed, is unevenly distributed along the optically focused energy-flux density of x-axis；
4) crystal silicon photovoltaic cell group is discrete along the x-axis direction, form n discrete unit, the crystalline substance of each discrete unit
Body Silicon photrouics group series resistance is Rs,i, crystal silicon photovoltaic cell group is discrete along the y-axis direction；
5) referring to fig. 2, a discrete unit in step 4) is formed according to crystal silicon photovoltaic cell equivalent circuit
One discrete unit equivalent circuit, a discrete unit equivalent circuit include: discrete unit diode, discrete unit constant-current source
Isc,iAnd the crystal silicon photovoltaic cell group series resistance R of discrete units,i, the connection type of discrete unit equivalent circuit are as follows: from
Dissipate cell diodes and discrete unit constant-current source it is parallel with one another, then with the crystal silicon photovoltaic cell group series resistance of discrete unit
Rs,iSeries connection；
6) n discrete unit is formed into n discrete unit equivalent circuit according to the connection type in step 5), according to parallel connection
Mode be connected with each other this n discrete unit equivalent circuit；
7) on the basis of the n discrete unit equivalent circuit in step 6) is parallel with one another, corresponding welding and convergent belt exist
Polysilicon photovoltaic cells group present position, serial or parallel connection enter the equivalent resistance R of welding circuith,s, confluence between adjacent welding
The equivalent resistance R of bandhl,sWith the equivalent resistance R of the convergent belt of external circuitshl,o；
The equivalent resistance R of welding circuith,sThe equivalent resistance R of convergent belt between adjacent weldinghl,sAfter series connection, then with
The equivalent resistance R of welding circuith,sAfter parallel connection, finally with the equivalent resistance R of the convergent belt of external circuitshl,oSeries connection；
8) on the basis of step 7), IV analyzer is connected into, forms a closed circuit, it is poly- to complete two-dimentional condenser
The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under light；
9) for the discrete unit diode of the discrete unit equivalent circuit in step 5), it is anti-that discrete unit diode is set
To saturation current I0,i, discrete unit Diode Ideality Factor AiAnd discrete unit diode temperature Ti:
Reverse saturation current I of the discrete unit diode at certain temperature T0,i_T, it is equal to monomer crystal silicon photovoltaic cell and exists
Reverse saturation current I under temperature T0_TWith the quotient of discrete unit quantity n, i.e. I0,i_T=I0_T/n；
Discrete unit Diode Ideality Factor Ai, it is equal to the sum of m monomer crystal silicon photovoltaic cell ideal factor A, i.e. Ai=
mA；
Discrete unit diode temperature TiFor the mean temperature of the crystal silicon photovoltaic cell group of the discrete unit；
10) to the discrete unit constant-current source I in the discrete unit equivalent circuit in step 5)sc,iSetting:
(total solar irradiance G at standard conditionst,stco=1000W/m2, crystal silicon photovoltaic cell temperature Tstco=25
DEG C), monomer crystal silicon photovoltaic cell short circuit current is Isc,stco；The temperature coefficient of monomer crystal silicon photovoltaic cell short circuit current is
α；
Total solar irradiance of the two-dimentional condenser Photospot solar stream in step 5) on the lighting surface of discrete unit be
Gt,i, discrete unit diode temperature is Ti；
Discrete unit constant-current source Isc,iValue calculate and be arranged according to following formula:
Isc,i=Isc,stcoGt,i/Gt,stco(1+α(Ti-Tstco))
11) using the mathematic(al) representation of volt-ampere of characteristic diode and Kirchhoff's law and two are solved by Newton iteration method
It ties up concentration photovoltaic system and exports electric energy, or establish graphical programs using Multisim software and calculate two-dimentional concentration photovoltaic system
Electric energy is exported, completes two-dimentional condenser to concentration photovoltaic system electrical performance evaluation.
Claims (3)
1. assessing the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property, which is characterized in that including following step
It is rapid:
1) it connects to form crystal silicon photovoltaic cell group by welding between several monomer crystal silicon photovoltaic cells, in crystalline silicon photovoltaic
Xoy coordinate system is established on battery pack lighting surface, monomer crystal silicon photovoltaic cell is connected in series along the y-axis direction, serial number m；
Welding along the y-axis direction has been correspondingly formed welding circuit, amounts to l welding circuit, and the equivalent resistance of each welding circuit is
Rh,s；
2) at crystal silicon photovoltaic cell group both ends, l welding circuit connection is got up by convergent belt, convergent belt includes adjacent welding
Between convergent belt and external circuits convergent belt, form convergent belt circuit, the convergent belt between adjacent welding it is equivalent
Resistance is Rhl,s, the equivalent resistance of the convergent belt of external circuits is Rhl,o；
3) two-dimentional condenser prefocus stream is on crystal silicon photovoltaic cell group lighting surface, along the optically focused flux-density distribution of y-axis
Uniformly, it is unevenly distributed along the optically focused energy-flux density of x-axis；
4) crystal silicon photovoltaic cell group is discrete along the x-axis direction, form n discrete unit, the crystalline silicon of each discrete unit
Photovoltaic cell group series resistance is Rs,i, crystal silicon photovoltaic cell group is discrete along the y-axis direction；
5) discrete unit is formed for a discrete unit in step 4) according to crystal silicon photovoltaic cell equivalent circuit
Equivalent circuit, a discrete unit equivalent circuit include: discrete unit diode, discrete unit constant-current source Isc,iAnd discrete list
The crystal silicon photovoltaic cell group series resistance R of members,i, the connection type of discrete unit equivalent circuit are as follows: discrete unit diode with
Discrete unit constant-current source is parallel with one another, then with the crystal silicon photovoltaic cell group series resistance R of discrete units,iSeries connection；
6) n discrete unit is formed into n discrete unit equivalent circuit according to the connection type in step 5), according to side in parallel
Formula is connected with each other this n discrete unit equivalent circuit；
7) on the basis of the n discrete unit equivalent circuit in step 6) is parallel with one another, corresponding welding and convergent belt are in polycrystalline
Silicon photrouics group present position, serial or parallel connection enter the equivalent resistance R of welding circuith,s, convergent belt between adjacent welding
Equivalent resistance Rhl,sWith the equivalent resistance R of the convergent belt of external circuitshl,o；
The equivalent resistance R of welding circuith,sThe equivalent resistance R of convergent belt between adjacent weldinghl,sAfter series connection, then it is electric with welding
The equivalent resistance R on roadh,sAfter parallel connection, finally with the equivalent resistance R of the convergent belt of external circuitshl,oSeries connection；
8) on the basis of step 7), IV analyzer is connected into, forms a closed circuit, is completed under two-dimentional condenser optically focused
Crystal silicon photovoltaic cell group two-dimentional multiple diode equivalent circuit；
9) for the discrete unit diode of the discrete unit equivalent circuit in step 5), discrete unit diode is set and is reversely satisfied
With electric current Io,i, discrete unit Diode Ideality Factor AiAnd discrete unit diode temperature Ti:
10) to the discrete unit constant-current source I in the discrete unit equivalent circuit in step 5)sc,iSetting:
11) two-dimentional concentration photovoltaic system output electric energy is calculated, completes two-dimentional condenser to concentration photovoltaic system electrical performance evaluation；
Wherein, for the discrete unit constant-current source I in discrete unit equivalent circuit in step 10)sc,iSetting detailed process such as
Under:
At standard conditions, the condition of the status of criterion are as follows: total solar irradiance Gt,stco=1000W/m2, crystal silicon photovoltaic cell temperature
Spend Tstco=25 DEG C；Monomer crystal silicon photovoltaic cell short circuit current is Isc,stco；The temperature of monomer crystal silicon photovoltaic cell short circuit current
Degree coefficient is α；
Total solar irradiance of the two-dimentional condenser Photospot solar stream in step 5) on the lighting surface of discrete unit is Gt,i, from
Throwaway member diode temperature is Ti；
Discrete unit constant-current source Isc,iValue calculate and be arranged according to following formula:
2. the calculation method according to claim 1 assessed two-dimentional condenser and concentration photovoltaic system electrical property is influenced,
It is characterized in that, reverse saturation current I of the discrete unit diode at certain temperature T in step 9)o,i_T, it is equal to monomer crystalline silicon light
Lie prostrate battery reverse saturation current I at temperature To_TWith the quotient of discrete unit quantity n；
Discrete unit Diode Ideality Factor Ai, it is equal to the sum of m monomer crystal silicon photovoltaic cell ideal factor A；
Discrete unit diode temperature TiFor the mean temperature of the crystal silicon photovoltaic cell group of the discrete unit.
3. the calculation method according to claim 1 assessed two-dimentional condenser and concentration photovoltaic system electrical property is influenced,
It is characterized in that, is calculated by the following method in step 11): is fixed using the mathematic(al) representation and kirchhoff of volt-ampere of characteristic diode
It restrains and passes through Newton iteration method and solve two-dimentional concentration photovoltaic system output electric energy, or establish graphical journey using Multisim software
Sequence is calculated.
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