CN106372350B - Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property - Google Patents

Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property Download PDF

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CN106372350B
CN106372350B CN201610817461.7A CN201610817461A CN106372350B CN 106372350 B CN106372350 B CN 106372350B CN 201610817461 A CN201610817461 A CN 201610817461A CN 106372350 B CN106372350 B CN 106372350B
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discrete unit
photovoltaic cell
crystalline silicon
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魏进家
谢胡凌
王泽昕
刘志兵
张高明
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Xian Jiaotong University
Suzhou Academy of Xian Jiaotong University
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Suzhou Academy of Xian Jiaotong University
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Abstract

Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property, for the solar concentration photovoltaic system using two-dimentional condenser, it is discrete in the progress of the direction of crystal silicon photovoltaic cell uneven distribution along Photospot solar stream, form multiple discrete units, according to the equivalent circuit of polysilicon photovoltaic cells, form the two-dimentional multiple diode computation model of multiple discrete unit parallel connections, discrete two-dimentional Photospot solar circulation is changed to short circuit current and is correspondingly arranged into the discrete unit constant-current source of two-dimentional multiple diode computation model, then graphical programs are established using iterative method or Multisim software and calculates two-dimentional concentrating photovoltaic photo-thermal system output electric energy, to realize the influence for assessing the two-dimentional condenser optically focused uniformity to concentration photovoltaic system.

Description

Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property
Technical field
The invention belongs to solar concentrating photovoltaic research field, it is related to a kind of two-dimentional condenser of assessment to concentration photovoltaic system The calculation method that electrical property influences.
Background technique
In solar concentration photovoltaic system, condenser optics performance has a great impact to system electrical property, condenser Optical property include that condenser optics efficiency and the condenser convergence aspect of the solar energy stream uniformity two, optical efficiency characterization are poly- " amount " of light device optically focused, and " matter " of optically focused uniformity characterization condenser optically focused, the often condenser of same optical efficiency, by It is different in its optically focused uniformity, enable the output electric property of system different；Due to the presence of the optically focused uniformity, excessively high office In the irradiation to photovoltaic cell of portion's solar energy stream, so that photovoltaic cell local current is excessively high, lead to photovoltaic cell local I2R loss increases Add, so that the electric energy that photovoltaic cell generates is consumed in local excessive, to reduce the electrical property of entire concentration photovoltaic system, separately Outside, it since excessively high local solar energy stream irradiates, so that resistance value is relatively excessively high in the area for photovoltaic cell, is not able to satisfy The work of conveying electric energy is undertaken under corresponding high current density, and then leads to photovoltaic cell local I2R loss increases, to reduce The electrical property of entire concentration photovoltaic system.In consideration of it, being needed for the solar concentration photovoltaic system using two-dimentional condenser A kind of method calculates and assesses influence of the Photospot solar stream uniformity to system electrical property.
Summary of the invention
For the solar concentration photovoltaic system using two-dimentional condenser, it is an object of that present invention to provide a kind of assessment two dimensions The calculation method that condenser influences concentration photovoltaic system electrical property.
To achieve the above object, the technical solution adopted by the present invention are as follows:
Assess the calculation method that two-dimentional condenser influences concentration photovoltaic system electrical property, comprising the following steps:
1) it connects to form crystal silicon photovoltaic cell group by welding between several monomer crystal silicon photovoltaic cells, in crystalline silicon Xoy coordinate system is established on photovoltaic cell group lighting surface, monomer crystal silicon photovoltaic cell is connected in series along the y-axis direction, serial number For m；Welding along the y-axis direction has been correspondingly formed welding circuit, amounts to l welding circuit, the equivalent electricity of each welding circuit Resistance is Rh,s；
2) at crystal silicon photovoltaic cell group both ends, l welding circuit connection is got up by convergent belt, convergent belt includes adjacent The convergent belt of convergent belt and external circuits between welding forms convergent belt circuit, the convergent belt between adjacent welding Equivalent resistance is Rhl,s, the equivalent resistance of the convergent belt of external circuits is Rhl,o；
3) two-dimentional condenser prefocus stream is on crystal silicon photovoltaic cell group lighting surface, along the optically focused energy-flux density of y-axis It is evenly distributed, is unevenly distributed along the optically focused energy-flux density of x-axis；
4) crystal silicon photovoltaic cell group is discrete along the x-axis direction, form n discrete unit, the crystalline substance of each discrete unit Body Silicon photrouics group series resistance is Rs,i, crystal silicon photovoltaic cell group is discrete along the y-axis direction；
5) according to crystal silicon photovoltaic cell equivalent circuit, for a discrete unit in step 4), formation one is discrete Unit equivalent circuit, a discrete unit equivalent circuit include: discrete unit diode, discrete unit constant-current source Isc,iAnd from The crystal silicon photovoltaic cell group series resistance R of throwaway members,i, the connection type of discrete unit equivalent circuit are as follows: two pole of discrete unit Manage it is parallel with one another with discrete unit constant-current source, then with the crystal silicon photovoltaic cell group series resistance R of discrete units,iSeries connection；
6) n discrete unit is formed into n discrete unit equivalent circuit according to the connection type in step 5), according to parallel connection Mode be connected with each other this n discrete unit equivalent circuit；
7) on the basis of the n discrete unit equivalent circuit in step 6) is parallel with one another, corresponding welding and convergent belt exist Polysilicon photovoltaic cells group present position, serial or parallel connection enter the equivalent resistance R of welding circuith,s, confluence between adjacent welding The equivalent resistance R of bandhl,sWith the equivalent resistance R of the convergent belt of external circuitshl,o；
The equivalent resistance R of welding circuith,sThe equivalent resistance R of convergent belt between adjacent weldinghl,sAfter series connection, then with The equivalent resistance R of welding circuith,sAfter parallel connection, finally with the equivalent resistance R of the convergent belt of external circuitshl,oSeries connection；
8) on the basis of step 7), IV analyzer is connected into, forms a closed circuit, it is poly- to complete two-dimentional condenser The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under light；
9) for the discrete unit diode of the discrete unit equivalent circuit in step 5), it is anti-that discrete unit diode is set To saturation current I0,i, discrete unit Diode Ideality Factor AiAnd discrete unit diode temperature Ti:
10) to the discrete unit constant-current source I in the discrete unit equivalent circuit in step 5)sc,iSetting:
11) two-dimentional concentration photovoltaic system output electric energy is calculated, completes two-dimentional condenser to concentration photovoltaic system electrical property Assessment.
A further improvement of the present invention lies in that reversed saturation electricity of the discrete unit diode at certain temperature T in step 9) Flow I0,i_T, it is equal to monomer crystal silicon photovoltaic cell reverse saturation current I at temperature T0_TWith the quotient of discrete unit quantity n；
Discrete unit Diode Ideality Factor Ai, it is equal to the sum of m monomer crystal silicon photovoltaic cell ideal factor A；
Discrete unit diode temperature TiFor the mean temperature of the crystal silicon photovoltaic cell group of the discrete unit.
A further improvement of the present invention lies in that for the discrete unit constant current in discrete unit equivalent circuit in step 10) Source Isc, detailed process is as follows for the setting of i:
At standard conditions, the condition of the status of criterion are as follows: total solar irradiance Gt,stco=1000W/m2, crystalline silicon photovoltaic Battery temperature Tstco=25 DEG C；Monomer crystal silicon photovoltaic cell short circuit current is Isc,stco；Monomer crystal silicon photovoltaic cell short circuit electricity The temperature coefficient of stream is α；
Total solar irradiance of the two-dimentional condenser Photospot solar stream in step 5) on the lighting surface of discrete unit be Gt,i, discrete unit diode temperature is Ti；
Discrete unit constant-current source Isc,iValue calculate and be arranged according to following formula:
Isc,i=Isc,stcoGt,i/Gt,stco(1+α(Ti-Tstco))。
A further improvement of the present invention lies in that being calculated by the following method in step 11): utilizing volt-ampere of characteristic diode Mathematic(al) representation and Kirchhoff's law simultaneously solve two-dimentional concentration photovoltaic system output electric energy by Newton iteration method, or utilize Multisim software is established graphical programs and is calculated.
Compared with prior art, the invention has the following beneficial effects: utilize method of the invention, it will be able to assess non-equal Influence of the evenness to system output electric energy；Because when hot spot is uniform, output electric energy is a value, and hot spot is uneven, output Be another value, this method that can propose through the invention this when is assessed, when non-uniform Output electric property can with it is uniform when output electric property can comparison, to evaluate the non-homogeneous influence to electrical property.Therefore certain It wants discrete, if not discrete, influence of the non-uniformity to electrical property cannot be evaluated.Because not discrete, it is non-homogeneous with it is uniform Hot spot, be all identical energy value, the influence for evaluating Irregular facula to electrical property of just having no idea this when.This hair The bright solar concentration photovoltaic system for using two-dimentional condenser, along Photospot solar stream in crystal silicon photovoltaic cell unevenness The direction of even distribution carries out discrete, forms multiple discrete units, according to the equivalent circuit of crystal silicon photovoltaic cell, formed it is multiple from The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under throwaway member two-dimentional condenser optically focused in parallel, will be discrete The crystal silicon photovoltaic cell group that two-dimentional Photospot solar circulation is changed to short circuit current and is correspondingly arranged under two-dimentional condenser optically focused Two-dimentional multiple diode equivalent circuit discrete unit constant-current source in, figure is then established using iterative method or Multisim software Shape program calculates two-dimentional concentration photovoltaic system output electric energy, to realize the two-dimentional condenser optically focused uniformity of assessment to optically focused The influence of photovoltaic system.The present invention provides a kind of concentration photovoltaic system two dimension multiple diode computation model, and it is poly- can to assess two dimension The light device optically focused uniformity influences concentration photovoltaic system electrical property.
Detailed description of the invention
Fig. 1 is the crystal silicon photovoltaic cell group and discrete way schematic diagram in the case of two-dimentional condenser optically focused.
Fig. 2 is the two-dimentional multiple diode equivalent circuit of the crystal silicon photovoltaic cell group under two-dimentional condenser optically focused.
Specific embodiment
The present invention will be further described below with reference to the drawings.
Calculating step of the invention are as follows:
1) it referring to Fig. 1, connects to form crystal silicon photovoltaic cell group by welding between several monomer crystal silicon photovoltaic cells, Xoy coordinate system is established on crystal silicon photovoltaic cell group lighting surface, monomer crystal silicon photovoltaic cell is connected in series along the y-axis direction, Serial number is m；Welding along the y-axis direction has been correspondingly formed welding circuit, amounts to l welding circuit, each welding circuit Equivalent resistance be Rh,s；
2) at crystal silicon photovoltaic cell group both ends, l welding circuit connection is got up by convergent belt, convergent belt includes adjacent The convergent belt of convergent belt and external circuits between welding forms convergent belt circuit, the convergent belt between adjacent welding Equivalent resistance is Rhl,s, the equivalent resistance of the convergent belt of external circuits is Rhl,o；
3) two-dimentional condenser prefocus stream is on crystal silicon photovoltaic cell group lighting surface, along the optically focused energy-flux density of y-axis It is evenly distributed, is unevenly distributed along the optically focused energy-flux density of x-axis；
4) crystal silicon photovoltaic cell group is discrete along the x-axis direction, form n discrete unit, the crystalline substance of each discrete unit Body Silicon photrouics group series resistance is Rs,i, crystal silicon photovoltaic cell group is discrete along the y-axis direction；
5) referring to fig. 2, a discrete unit in step 4) is formed according to crystal silicon photovoltaic cell equivalent circuit One discrete unit equivalent circuit, a discrete unit equivalent circuit include: discrete unit diode, discrete unit constant-current source Isc,iAnd the crystal silicon photovoltaic cell group series resistance R of discrete units,i, the connection type of discrete unit equivalent circuit are as follows: from Dissipate cell diodes and discrete unit constant-current source it is parallel with one another, then with the crystal silicon photovoltaic cell group series resistance of discrete unit Rs,iSeries connection；
6) n discrete unit is formed into n discrete unit equivalent circuit according to the connection type in step 5), according to parallel connection Mode be connected with each other this n discrete unit equivalent circuit；
7) on the basis of the n discrete unit equivalent circuit in step 6) is parallel with one another, corresponding welding and convergent belt exist Polysilicon photovoltaic cells group present position, serial or parallel connection enter the equivalent resistance R of welding circuith,s, confluence between adjacent welding The equivalent resistance R of bandhl,sWith the equivalent resistance R of the convergent belt of external circuitshl,o；
The equivalent resistance R of welding circuith,sThe equivalent resistance R of convergent belt between adjacent weldinghl,sAfter series connection, then with The equivalent resistance R of welding circuith,sAfter parallel connection, finally with the equivalent resistance R of the convergent belt of external circuitshl,oSeries connection；
8) on the basis of step 7), IV analyzer is connected into, forms a closed circuit, it is poly- to complete two-dimentional condenser The two-dimentional multiple diode equivalent circuit of crystal silicon photovoltaic cell group under light；
9) for the discrete unit diode of the discrete unit equivalent circuit in step 5), it is anti-that discrete unit diode is set To saturation current I0,i, discrete unit Diode Ideality Factor AiAnd discrete unit diode temperature Ti:
Reverse saturation current I of the discrete unit diode at certain temperature T0,i_T, it is equal to monomer crystal silicon photovoltaic cell and exists Reverse saturation current I under temperature T0_TWith the quotient of discrete unit quantity n, i.e. I0,i_T=I0_T/n；
Discrete unit Diode Ideality Factor Ai, it is equal to the sum of m monomer crystal silicon photovoltaic cell ideal factor A, i.e. Ai= mA；
Discrete unit diode temperature TiFor the mean temperature of the crystal silicon photovoltaic cell group of the discrete unit；
10) to the discrete unit constant-current source I in the discrete unit equivalent circuit in step 5)sc,iSetting:
(total solar irradiance G at standard conditionst,stco=1000W/m2, crystal silicon photovoltaic cell temperature Tstco=25 DEG C), monomer crystal silicon photovoltaic cell short circuit current is Isc,stco；The temperature coefficient of monomer crystal silicon photovoltaic cell short circuit current is α；
Total solar irradiance of the two-dimentional condenser Photospot solar stream in step 5) on the lighting surface of discrete unit be Gt,i, discrete unit diode temperature is Ti；
Discrete unit constant-current source Isc,iValue calculate and be arranged according to following formula:
Isc,i=Isc,stcoGt,i/Gt,stco(1+α(Ti-Tstco))
11) using the mathematic(al) representation of volt-ampere of characteristic diode and Kirchhoff's law and two are solved by Newton iteration method It ties up concentration photovoltaic system and exports electric energy, or establish graphical programs using Multisim software and calculate two-dimentional concentration photovoltaic system Electric energy is exported, completes two-dimentional condenser to concentration photovoltaic system electrical performance evaluation.

Claims (3)

1.评估二维聚光器对聚光光伏系统电性能影响的计算方法，其特征在于，包括以下步骤：1. A calculation method for evaluating the influence of a two-dimensional concentrator on the electrical properties of a concentrating photovoltaic system, characterized in that it comprises the following steps: 1)若干单体晶体硅光伏电池之间通过焊带连接形成晶体硅光伏电池组，在晶体硅光伏电池组采光面上建立xoy坐标系，单体晶体硅光伏电池沿y轴方向串联连接，串联数量为m；沿着y轴方向的焊带，对应形成了焊带电路，共计l个焊带电路，每个焊带电路的等效电阻为Rh,s；1) Several single crystalline silicon photovoltaic cells are connected by welding strips to form a crystalline silicon photovoltaic cell group, an xoy coordinate system is established on the lighting surface of the crystalline silicon photovoltaic cell group, and the single crystalline silicon photovoltaic cells are connected in series along the y-axis direction, and the series The number is m; the welding strips along the y-axis direction correspond to forming welding strip circuits, a total of l welding strip circuits, and the equivalent resistance of each welding strip circuit is R h,s ; 2)在晶体硅光伏电池组两端，由汇流带将l个焊带电路连接起来，汇流带包含相邻焊带之间的汇流带以及外接电路的汇流带，形成了汇流带电路，相邻焊带之间的汇流带的等效电阻为Rhl,s，外接电路的汇流带的等效电阻为Rhl,o；2) At both ends of the crystalline silicon photovoltaic cell group, one soldering strip circuit is connected by a bussing strip. The bussing strip includes the bussing strips between adjacent welding strips and the bussing strips of the external circuit, forming a bussing strip circuit, adjacent to each other. The equivalent resistance of the bus strip between the welding strips is R hl,s , and the equivalent resistance of the bus strip of the external circuit is R hl,o ; 3)二维聚光器聚光能流在晶体硅光伏电池组采光面上，沿着y轴的聚光能流密度分布均匀，沿着x轴的聚光能流密度分布不均匀；3) The concentrating energy flow of the two-dimensional concentrator is on the lighting surface of the crystalline silicon photovoltaic cell group, and the concentrating energy flux density distribution along the y-axis is uniform, and the concentrating energy flux density distribution along the x-axis is uneven; 4)将晶体硅光伏电池组沿着x轴方向离散，形成n个离散单元，每个离散单元的晶体硅光伏电池组串联电阻为Rs,i，晶体硅光伏电池组沿着y轴方向不离散；4) Discrete the crystalline silicon photovoltaic cell group along the x-axis direction to form n discrete units, the series resistance of the crystalline silicon photovoltaic cell group of each discrete unit is R s,i , and the crystalline silicon photovoltaic cell group is different along the y-axis direction. discrete; 5)根据晶体硅光伏电池等效电路，对于步骤4)中的一个离散单元，形成一个离散单元等效电路，一个离散单元等效电路包括：离散单元二极管、离散单元恒流源Isc,i以及离散单元的晶体硅光伏电池组串联电阻Rs,i，离散单元等效电路的连接方式为：离散单元二极管与离散单元恒流源相互并联，然后与离散单元的晶体硅光伏电池组串联电阻Rs,i串联；5) According to the equivalent circuit of the crystalline silicon photovoltaic cell, for a discrete unit in step 4), a discrete unit equivalent circuit is formed, and a discrete unit equivalent circuit includes: a discrete unit diode, a discrete unit constant current source I sc,i and the series resistance R s,i of the crystalline silicon photovoltaic cell group of the discrete unit, the connection method of the equivalent circuit of the discrete unit is: the discrete unit diode and the discrete unit constant current source are connected in parallel with each other, and then connected to the series resistance of the crystalline silicon photovoltaic cell group of the discrete unit. R s, i in series; 6)将n个离散单元按照步骤5)中的连接方式形成n个离散单元等效电路，按照并联的方式相互连接这n个离散单元等效电路；6) forming n discrete unit equivalent circuits according to the connection mode in step 5), and connecting the n discrete unit equivalent circuits to each other in a parallel manner; 7)在步骤6)中的n个离散单元等效电路相互并联的基础上，对应焊带与汇流带在多晶硅光伏电池组所处位置，串联或并联入焊带电路的等效电阻Rh,s、相邻焊带之间的汇流带的等效电阻Rhl,s与外接电路的汇流带的等效电阻Rhl,o；7) On the basis that the equivalent circuits of the n discrete units in step 6) are connected in parallel with each other, the equivalent resistance R h of the corresponding welding strip and the bus strip at the position of the polysilicon photovoltaic cell group is connected in series or in parallel to the welding strip circuit, s , the equivalent resistance R hl,s of the bus strip between adjacent welding strips and the equivalent resistance R hl,o of the bus strip of the external circuit; 焊带电路的等效电阻Rh,s与相邻焊带之间的汇流带的等效电阻Rhl,s串联后，再与焊带电路的等效电阻Rh,s并联后，最后与外接电路的汇流带的等效电阻Rhl,o串联；The equivalent resistance R h,s of the ribbon circuit is connected in series with the equivalent resistance R hl,s of the busbar between adjacent ribbons, and then in parallel with the equivalent resistance R h,s of the ribbon circuit, and finally connected with the equivalent resistance R h,s of the ribbon circuit. The equivalent resistance R hl,o of the bus strip of the external circuit is connected in series; 8)在步骤7)基础上，将IV分析仪串联入内，形成一个闭合回路，完成二维聚光器聚光下的晶体硅光伏电池组的二维多二极管等效电路；8) On the basis of step 7), the IV analyzer is connected in series to form a closed loop to complete the two-dimensional multi-diode equivalent circuit of the crystalline silicon photovoltaic cell group under the concentrating of the two-dimensional concentrator; 9)对于步骤5)中的离散单元等效电路的离散单元二极管，设置离散单元二极管反向饱和电流Io,i、离散单元二极管理想因子Ai以及离散单元二极管温度Ti：9) For the discrete cell diode of the discrete cell equivalent circuit in step 5), set the discrete cell diode reverse saturation current I o,i , the discrete cell diode ideality factor A i and the discrete cell diode temperature T i : 10)对步骤5)中的离散单元等效电路中的离散单元恒流源Isc,i的设置：10) Setting of the discrete unit constant current source I sc,i in the discrete unit equivalent circuit in step 5): 11)计算出二维聚光光伏系统输出电能，完成二维聚光器对聚光光伏系统电性能评估；11) Calculate the output power of the two-dimensional concentrating photovoltaic system, and complete the evaluation of the electrical performance of the two-dimensional concentrator for the concentrating photovoltaic system; 其中，步骤10)中对于离散单元等效电路中的离散单元恒流源Isc,i的设置的具体过程如下：Wherein, the specific process for setting the discrete unit constant current source I sc,i in the discrete unit equivalent circuit in step 10) is as follows: 在标准状况下，标准状况的条件为：太阳总辐照度Gt,stco＝1000W/m2，晶体硅光伏电池温度Tstco＝25℃；单体晶体硅光伏电池短路电流为Isc,stco；单体晶体硅光伏电池短路电流的温度系数为α；Under the standard condition, the conditions of the standard condition are: total solar irradiance G t,stco =1000W/m 2 , crystalline silicon photovoltaic cell temperature T stco =25℃; single crystalline silicon photovoltaic cell short-circuit current I sc,stco ; The temperature coefficient of the short-circuit current of a single crystalline silicon photovoltaic cell is α; 二维聚光器聚光太阳能流在步骤5)中离散单元的采光面上的太阳总辐照度为Gt,i，离散单元二极管温度为Ti；The total solar irradiance on the lighting surface of the discrete unit in step 5) of the two-dimensional concentrator concentrating solar flow is G t,i , and the temperature of the discrete unit diode is T i ; 离散单元恒流源Isc,i的值按照如下公式计算并设置：The value of the discrete unit constant current source I sc,i is calculated and set according to the following formula: 2.根据权利要求1所述的评估二维聚光器对聚光光伏系统电性能影响的计算方法，其特征在于，步骤9)中离散单元二极管在某温度T下的反向饱和电流Io,i_T，等于单体晶体硅光伏电池在温度T下反向饱和电流Io_T与离散单元数量n的商；2. The calculation method for evaluating the influence of a two-dimensional concentrator on the electrical performance of a concentrating photovoltaic system according to claim 1, wherein the reverse saturation current I o of the discrete unit diode at a certain temperature T in step 9) , i_T , equal to the quotient of the reverse saturation current I o_T of the single crystalline silicon photovoltaic cell at the temperature T and the number of discrete units n; 离散单元二极管理想因子Ai，等于m个单体晶体硅光伏电池理想因子A之和；The ideality factor A i of the discrete unit diode is equal to the sum of the ideality factors A of m single crystalline silicon photovoltaic cells; 离散单元二极管温度Ti为该离散单元的晶体硅光伏电池组的平均温度。The discrete cell diode temperature Ti is the average temperature of the crystalline silicon photovoltaic cell stack for that discrete cell. 3.根据权利要求1所述的评估二维聚光器对聚光光伏系统电性能影响的计算方法，其特征在于，步骤11)中通过以下方法计算：利用二极管伏安特性的数学表达式与基尔霍夫定律并通过牛顿迭代法解得二维聚光光伏系统输出电能，或利用Multisim软件建立图形化程序进行计算。3. The calculation method for evaluating the influence of a two-dimensional concentrator on the electrical performance of a concentrating photovoltaic system according to claim 1, characterized in that, in step 11), calculating by the following method: using the mathematical expression of diode volt-ampere characteristics and Kirchhoff's law and the Newton iteration method to solve the output power of the two-dimensional concentrating photovoltaic system, or use Multisim software to establish a graphical program for calculation.
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