CN106353970A - Light source polarization optimization method and light source-masking-polarization optimization method - Google Patents
Light source polarization optimization method and light source-masking-polarization optimization method Download PDFInfo
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- CN106353970A CN106353970A CN201510418311.4A CN201510418311A CN106353970A CN 106353970 A CN106353970 A CN 106353970A CN 201510418311 A CN201510418311 A CN 201510418311A CN 106353970 A CN106353970 A CN 106353970A
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Abstract
The invention provides a light source polarization optimization method and a light source-masking-polarization optimization method. The light source polarization optimization method comprises the following steps: dividing a light source into a plurality of source blocks; setting a plurality of polarization states for each source block; calculating polarization configurations of the light source according to the plurality of polarization states of the source block; testing the polarization configurations on a test pattern; choosing the optimal polarization configuration as a final polarization configuration for the light source according to the test, wherein the optimal polarization configuration has a maximum process window for the test pattern. The light source polarization optimization method is implemented after the implementation of light source-masking optimization, so that the effective light source-masking-polarization optimization is achieved, and the optical patterning quality is greatly improved.
Description
Technical field
The present invention relates to technical field of semiconductors, polarize optimization side in particular to a kind of light source
Method and light source-mask-polarization optimize (source-mask-polarization optimization) method.
Background technology
With the complexity more and more higher of integrated circuit, it is less and less that characteristic size also becomes.When
The characteristic size of integrated circuit close to the system limits of photo-etching machine exposal, that is, characteristic size close to or
During less than photolithography light source, the domain that silicon chip produces occurs obvious distortion.For this photoetching
System must adopt RET, in order to improve image quality.
Develop toward the less direction of critical size with technology, only mask is implemented with the routine optimizing
Optical proximity correction (optical proximity correction, opc) possibly cannot meet day
The specification requirement of the strict critical size of benefit.In such a case, it is possible to irradiation source/light source
It is also carried out optimizing, to improve photoetching fidelity, that is, enter line light source-mask optimization (smo).So
And, smo still can not meet the specification requirement of the critical size of increasingly stringent and needs sometimes
Improve etching system imaging resolution further.
Content of the invention
For the deficiencies in the prior art, the present invention provides a kind of light source to polarize optimization method, described
Light source polarization optimization method includes: light source is divided into multiple source blocks (panel)；By described in each
Source block is set to there is multiple polarization states；Multiple inclined based on each set described source block
Shake all polarization configurations of light source described in state computation；Resolution chart is tested described all inclined
Shake configuration；And select optimal polarization configuration finally inclined as described light source based on described test
Shake configuration, described optimal polarization configuration pin has maximum process window to described resolution chart
(process window,pw).
In one embodiment of the invention, described light source is divided into multiple source blocks includes light source
It is divided into four source blocks.
In one embodiment of the invention, described each described source block is set to have multiple
Polarization state includes for each described source block being set to having four polarization states.
In one embodiment of the invention, described four polarization states are included along horizontal axis
Vertically the polarization state of axial direction and edge become positive/negative predetermined with regard to horizontal axis for polarization state, edge
The polarization state in the direction of angle.
In one embodiment of the invention, described predetermined angular is 45 degree.
In one embodiment of the invention, described light source includes 256 polarization configurations altogether.
In one embodiment of the invention, described light source is optimized light source.
In one embodiment of the invention, described polarization state is H mode (te) pattern.
In one embodiment of the invention, described light source polarization optimization method can be applied to
28 nanometers and its following process node.
Present invention also offers a kind of light source-mask-polarization optimization method, described light source-mask-
Polarization optimization method includes: after implementing light source-mask and optimizing, implements such as claim 1-9
Any one of described in light source polarization optimization method.
Light source polarization optimization method provided by the present invention can optimize it implementing light source-mask
After implement, optimized with realizing effective light source-mask-polarization, thus greatly improving optical patterning
Quality.
Brief description
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Attached
In figure shows embodiments of the invention and its description, for explaining the principle of the present invention.
In accompanying drawing:
Fig. 1 shows the flow chart that light source according to embodiments of the present invention polarizes optimization method；
Fig. 2 shows the schematic diagram that light source polarization according to embodiments of the present invention optimizes；And
Fig. 3 shows the schematic diagram that light source-mask-polarization according to embodiments of the present invention optimizes.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that the present invention
Can one or more of these details and be carried out.In other examples, in order to keep away
Exempt to obscure with the present invention, some technical characteristics well known in the art are not described.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.On the contrary, it is open thoroughly and complete to provide these embodiments will make
Entirely, and will fully convey the scope of the invention to those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as this
Bright restriction.When here uses, " one " of singulative, " one " and " described/should "
It is also intended to including plural form, unless context is expressly noted that other mode.It is also to be understood that art
Language " composition " and/or " inclusion ", when using in this specification, determine described feature,
The presence of integer, step, operation, element and/or part, but be not excluded for one or more its
The presence of its feature, integer, step, operation, element, part and/or group or interpolation.
When here uses, term "and/or" includes any and all combination of related Listed Items.
In order to thoroughly understand the present invention, detailed step and in detail will be proposed in following description
Thin structure, to explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is detailed
Carefully it is described as follows, but in addition to these describe in detail, the present invention can also have other enforcements
Mode.
In current generation, light source-mask optimization (source-mask optimization, smo)
Research mainly for 1x process node.It is a kind of that light source-mask-polarization optimizes (smpo)
More advanced photoetching resolution enhancement techniques, smpo introduces polarization state variable in smo,
Increase optimization degree of freedom, it utilizes the interaction between light source, mask and polarization state, lead to
Cross the change intensity of light source, light source electric vector deflection and mask topological structure, reach raising photoetching
The purpose of image quality.However, current smpo, still in theoretical research stage, lacks one
Plant the method implementing smpo.
The invention provides a kind of light source polarizes optimization method.Fig. 1 shows real according to the present invention
Apply the flow chart that the light source of example polarizes optimization method 100.As shown in figure 1, light source polarization optimizes
Method 100 comprises the following steps:
Step 101: light source is divided into multiple source blocks.Lithographic equipment generally includes irradiation system.
Irradiator receives the radiation from light source (such as laser instrument), and produces irradiation beam and be used for shining
Penetrate patterning device.In common irradiator, bundle is formed and controls into and makes in pupil
At face, bundle has desired spatial intensity distribution, also referred to as irradiation mode.The type of irradiation mode
Example have routine, bipolar, asymmetric, quadrupole, six types of severe debility disease and annular illumination mode.
Light source can be divided into by multiple source blocks based on irradiation mode.For example, in one embodiment, light
Source is quadrupole irradiation mode, light source can be divided into four source blocks, as shown in Figure 2, by light
Source is divided into four source blocks, respectively a, b, c and d.
Step 102: each source block is set to there is multiple polarization states.In a step 101
Described bundle can be polarization, the bundle of correct polarization can improve picture contrast and/or
Improve exposure latitude.The example continuing the above, can be by each source block (in such as Fig. 2
A, b, c and d) be respectively set to that there are multiple polarization states.In one embodiment,
Each source block can be set to there is four polarization states, this four polarization states are for example permissible
It is along the polarization state of horizontal axis (such as x-axis), along vertically axially (such as y-axis)
Polarization state and along the direction becoming positive/negative predetermined angular with regard to horizontal axis (such as x-axis)
Polarization state.Wherein, predetermined angular for example could be arranged to 45 degree.As shown in Figure 2
, for four source blocks a, b, c and d, each source block has four polarization states, point
It is not along x-axis, the polarization shape along y-axis and along the direction becoming positive/negative 45 degree of angles with regard to x-axis
State.These polarization states can be for example te pattern.
Step 103: calculate the institute of light source based on multiple polarization states of each set source block
There are polarization configurations.Based on the multiple polarization states in step 102, the institute of light source can be calculated
There are polarization configurations.The example continuing the above, four shown in Fig. 2 source block a, b, c and
Each of d source block is respectively provided with and becomes positive/negative along x-axis, along y-axis and edge with regard to x-axis
Four polarization states in the direction at 45 degree of angles, therefore can calculate including source block a, b, c
Include 256 polarization configurations with the whole light source of d altogether.
Step 104: all polarization configurations are tested on resolution chart.Calculating the institute of light source
After having polarization configurations, it can be tested, the inclined of photoetching quality can be improved to obtain
Shake configuration.
Step 105: select the final polarization that optimal polarization configures as light source to join based on this test
Put, optimal polarization configuration pin has maximum process window to resolution chart.Based on step 104
Test, can therefrom select optimal polarization configurations.Optimal polarization configuration can be for example for
Resolution chart has the polarization configurations of maximum process window.Using selected polarization configurations as light
The final polarization configurations in source, that is, achieve light source polarization and optimize.
According to embodiments of the invention, light source that above-mentioned light source polarizes in optimization method can be through
The light source optimizing.For example above-mentioned light source polarization optimization method can be excellent in enforcement light source-mask
The method implemented after change, the light source that is, above-mentioned light source polarizes in optimization method is through light source-cover
The light source of (post-smo) after film optimization.In this manner it is achieved that effective light source-mask-
Polarization optimizes, and goes out as shown in Figure 3.Therefore, said method can greatly improve and be photo-etched into
The quality of picture, disclosure satisfy that the specification requirement of the critical size of increasingly stringent, for example, can apply
In 28 nanometers and its following process node.
Present invention also offers a kind of light source-mask-polarization optimization method, this light source-mask-partially
The optimization method that shakes includes: after implementing light source-mask and optimizing, implements above-mentioned light source polarization excellent
Change method.The method can effectively be implemented light source-mask-polarization and optimize, and greatly improve and be photo-etched into
The quality of picture.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-mentioned
Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office
It is limited to above-described embodiment, more kinds of modifications can also be made according to the teachings of the present invention and repair
Change, within these variants and modifications all fall within scope of the present invention.The present invention's
Protection domain is defined by the appended claims and its equivalent scope.
Claims (10)
1. a kind of light source polarization optimization method is it is characterised in that described light source polarizes optimization side
Method includes:
Light source is divided into multiple source blocks；
Each described source block is set to there is multiple polarization states；
Calculate the institute of described light source based on multiple polarization states of each set described source block
There are polarization configurations；
Described all polarization configurations are tested on resolution chart；And
Optimal polarization configuration is selected as the final polarization configurations of described light source based on described test,
Described optimal polarization configuration pin has maximum process window to described resolution chart.
2. light source as claimed in claim 1 polarization optimization method is it is characterised in that described
Light source is divided into multiple source blocks include for light source being divided into four source blocks.
3. light source as claimed in claim 1 polarization optimization method is it is characterised in that described
Each described source block is set to have multiple polarization states include each described source block setting
For having four polarization states.
4. light source as claimed in claim 3 polarization optimization method is it is characterised in that described
Four polarization states include polarization state along horizontal axis, along vertically axial direction polarization state with
And the polarization state along the direction becoming positive/negative predetermined angular with regard to horizontal axis.
5. light source as claimed in claim 4 polarization optimization method is it is characterised in that described
Predetermined angular is 45 degree.
6. light source as claimed in claim 4 polarization optimization method is it is characterised in that described
Light source includes 256 polarization configurations altogether.
7. light source as claimed in claim 1 polarization optimization method is it is characterised in that described
Light source is optimized light source.
8. the light source polarization optimization method as described in any one of claim 1-7, it is special
Levy and be, described polarization state is H mode pattern.
9. the light source polarization optimization method as described in any one of claim 1-7, it is special
Levy and be, methods described can be applied to 28 nanometers and its following process node.
10. a kind of light source-mask-polarization optimization method is it is characterised in that described light source-mask
- polarization optimization method includes: after implementing light source-mask and optimizing, implements such as claim 1-9
Any one of described in light source polarization optimization method.
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| CN201510418311.4A CN106353970B (en) | 2015-07-16 | 2015-07-16 | Light source polarizes optimization method and light source-exposure mask-polarization optimization method |
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| CN106353970B CN106353970B (en) | 2019-07-26 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060275708A1 (en) * | 2003-02-21 | 2006-12-07 | Asml Holding N.V. | Lithographic printing with polarized light |
| CN101720450A (en) * | 2008-04-16 | 2010-06-02 | 新思科技有限公司 | Modeling a sector-polarized-illumination source in an optical lithography system |
| CN102411263A (en) * | 2010-09-23 | 2012-04-11 | Asml荷兰有限公司 | Source polarization optimization |
-
2015
- 2015-07-16 CN CN201510418311.4A patent/CN106353970B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060275708A1 (en) * | 2003-02-21 | 2006-12-07 | Asml Holding N.V. | Lithographic printing with polarized light |
| CN101720450A (en) * | 2008-04-16 | 2010-06-02 | 新思科技有限公司 | Modeling a sector-polarized-illumination source in an optical lithography system |
| CN102411263A (en) * | 2010-09-23 | 2012-04-11 | Asml荷兰有限公司 | Source polarization optimization |
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| CN106353970B (en) | 2019-07-26 |
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