CN105842977A

CN105842977A - Post-optical proximity correction repair method

Info

Publication number: CN105842977A
Application number: CN201510018670.0A
Authority: CN
Inventors: 杜杳隽
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Corp
Priority date: 2015-01-14
Filing date: 2015-01-14
Publication date: 2016-08-10
Anticipated expiration: 2035-01-14
Also published as: CN105842977B

Abstract

The invention provides a post-optical proximity correction repair method which includes the steps of: 1) forming a local correction region on the basis of an error mark generated in an optical proximity correction process before the post-optical proximity correction repair; and 2) performing local optical proximity correction in the local correction region until no error mark is generated. The post-optical proximity correction repair method performs the post-optical proximity correction on the basis of the local correction region, thereby greatly reduces operation load and improves efficiency.

Description

The method repaired for rear optical proximity correction

Technical field

The present invention relates to technical field of semiconductors, in particular to one for rear optical adjacent Revise and repair (post Optical Proximity Correction repair, post-OPC repair) Method.

Background technology

Along with the complexity of integrated circuit is more and more higher, it is more and more less that characteristic size also becomes.When The characteristic size of integrated circuit close to the system limits of photo-etching machine exposal, i.e. characteristic size close to or During less than photolithography light source, the domain that silicon chip produces there will be significantly distortion, and this phenomenon claims For optical proximity effect.In order to tackle optical proximity effect, it is proposed that RET. Wherein, optical proximity correction (i.e. OPC) has become most important technology.

OPC is not a process that the most just can obtain precise results, and it is one and constantly changes The process in generation, needs multiple authentication to revise.Then post-OPC repair is (i.e. to having done The domain of OPC verify after reparation) become improve OPC mass required step.Existing Some post-OPC repair methods are to reform in region based on the most whole chip of whole domain OPC, such method is very time-consuming, and operand is big and inefficiency.

Summary of the invention

For the deficiencies in the prior art, the present invention provides a kind of for rear optical proximity correction reparation Method.Described method includes: first step: repair it based on described rear optical proximity correction Error flag (error mark) produced by front optical proximity correction process forms local and repaiies Positive region；And second step: in described local correction region, implement indicative of local optical adjacent to repairing Just, until no longer producing error flag.

In one embodiment of the invention, after described method is additionally included in described second step Carry out overall optical proximity correction based on whole chip.

In one embodiment of the invention, described method is additionally included in described second step and carries out Interstage intert carry out once the overall situation optical proximity correction.

In one embodiment of the invention, the interstage that described second step is carried out is: institute State the neighbouring correction of indicative of local optical and have been carried out the number of times of predetermined threshold.

In one embodiment of the invention, described predetermined threshold is 10.

In one embodiment of the invention, described method is for the optical adjacent connecting aperture layer Revise.

In one embodiment of the invention, described connecting hole is contact hole (contact, CT).

In one embodiment of the invention, the neighbouring correction of described indicative of local optical includes contacting hole pattern The edge of case moves.

In one embodiment of the invention, the displacement that described edge moves is 0.5 nanometer.

In one embodiment of the invention, the size in described local correction region is 0.9 micron X 0.9 micron.

The method repaired for rear optical proximity correction provided by the present invention is based on local correction Region carries out rear optical proximity correction, can greatly reduce operand, improves efficiency.

Accompanying drawing explanation

The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Attached Figure shows embodiments of the invention and description thereof, is used for explaining the principle of the present invention.

In accompanying drawing:

Fig. 1 shows the example of the optical proximity correction to contact hole；

Fig. 2 shows and repairs for rear optical proximity correction according to an embodiment of the invention The flow chart of method；

Fig. 3 shows that the rear optical proximity correction of the contact hole of Fig. 1 is repaiied by the method using Fig. 2 Multiple example；And

Fig. 4 shows and repaiies for rear optical proximity correction in accordance with another embodiment of the present invention The flow chart of multiple method.

Detailed description of the invention

In the following description, a large amount of concrete details is given to provide to the present invention more Understand thoroughly.It is, however, obvious to a person skilled in the art that the present invention Can be carried out without these details one or more.In other example, in order to keep away Exempt to obscure with the present invention, technical characteristics more well known in the art are not described.

It should be appreciated that the present invention can implement in different forms, and it is not construed as office It is limited to embodiments presented herein.On the contrary, it is open thoroughly with complete to provide these embodiments to make Entirely, and will fully convey the scope of the invention to those skilled in the art.

The purpose of term as used herein is only that description specific embodiment and not as this Bright restriction.When using at this, " ", " " and " described/to be somebody's turn to do " of singulative It is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that art Language " forms " and/or " including ", when using in this specification, determine described feature, The existence of integer, step, operation, element and/or parts, but be not excluded for one or more its The existence of its feature, integer, step, operation, element, parts and/or group or interpolation. When using at this, term "and/or" includes any and all combination of relevant Listed Items.

In order to thoroughly understand the present invention, detailed step and in detail will be proposed in following description Thin structure, in order to the technical scheme that the explaination present invention proposes.Presently preferred embodiments of the present invention is detailed Carefully it is described as follows, but in addition to these describe in detail, the present invention can also have other and implement Mode.

OPC have become as critical size in integrated circuit fabrication process (critical dimension, CD) control and the indispensable approach of Yield lmproved.Pre-compensated for by Amending design figure Process deviation is to improve reducing power and the resolution of image.But, in the current generation, OPC Proof procedure is implemented on whole chip, and this requirement carries out many times iterative process, the most time-consumingly. Such as, the OPC to the intercommunicating pore such as contact hole and through hole.

Fig. 1 shows the example of the optical proximity correction to contact hole.The OPC of contact hole repaiies The graph outline that positive program is designed to ensure that on wafer can match with contact hole target.So And, still may make even across the revision program (recipe) preferably prepared and adjust Profile deviation target.As it is shown in figure 1, contact hole profile and grid after optical proximity correction (gate, GT) being too close to, its distance is less than the specification of 10 nanometers, and this understands the electrical properties to circuit Produce harmful effect.Square frame B in Fig. 1 has marked the problem edge needing to move inward. In order to carry out the movement at problem edge, need to carry out rear optical proximity correction reparation.As it was previously stated, Existing rear optical proximity correction repair process is implemented on whole chip, needs many times iteration It is wrong that reparation could remove institute, and this process will consume substantial amounts of CPU time.

Fig. 2 shows and repairs for rear optical proximity correction according to an embodiment of the invention The flow chart of method 200.As in figure 2 it is shown, method 200 comprises the following steps:

Step 201: the optical proximity correction process institute before repairing based on rear optical proximity correction The error flag produced forms local correction region.

Step 202: implement indicative of local optical in the local correction region formed in step 201 Neighbouring correction, until no longer producing error flag.

OPC verification by front one procedure, it will obtain error flag.Based on initial Error flag can produce local correction region.This local correction region surrounds initial error mark Note.Then the example of Fig. 1, Fig. 3 shows that the method using Fig. 2 is to the contact hole of Fig. 1 The example that rear optical proximity correction is repaired.As it is shown on figure 3, based on original error flag (figure The square frame B of 1) produce local correction region, this local correction region can be expressed as REOPC, As it is shown on figure 3, this local correction region REOPC is only the least region of whole chip. Such as, for example, 0.9 micron x of the size in this region 0.9 micron.This local correction region REOPC can be considered as the wave filter of whole chip.All ensuing reparations and checking will be Carry out in the REOPC of this local correction region.The neighbouring correction of indicative of local optical can include contact hole The edge of pattern moves.Alternatively, the size that edge moves could be arranged to 0.5 nanometer.

Specifically, the checking of the circulation of the first time in this local correction region can produce again new mistake Mis-marked, this new error flag quantity can (that is, rear optical proximity correction be repaiied than last circulation Optical proximity correction process before Fu) produced by error flag quantity the most a lot.And at this The error flag that the checking of the first time circulation in local correction region produces can pass to next Individual circulation continues to repair and verify.So, error flag is fewer and feweri along with cycle-index, Until it is fully erased.Therefore, it can be greatly reduced CPU time.Find through overtesting, right In some large size chip the chip of 10 millimeters (such as 10 millimeters x), use existing side Method needs two time-of-weeks to repair, as long as and the method according to the invention can complete for two days.

It will appreciated by the skilled person that the rear optics to contact hole illustrated in fig. 3 Neighbouring revise that to repair be only an example, repairing for rear optical adjacent according to embodiments of the present invention The method just repaired can be applicable to any other application needing post-OPC repair.

Fig. 4 shows and repaiies for rear optical proximity correction in accordance with another embodiment of the present invention The flow chart of multiple method 400.As shown in Figure 4, method 400 comprises the following steps:

Step 401: the optical proximity correction process institute before repairing based on rear optical proximity correction The error flag produced forms local correction region.

Step 402: implement indicative of local optical in the local correction region formed in step 401 Neighbouring correction, until no longer producing error flag.

Step 403: carry out overall optical adjacent based on whole chip after step 402 and repair Just.

Wherein, step 401 and step 402 respectively with step 201 and the step of method 200 202 are similar to, and therefore here is omitted.

In method 400, after in step 402, add step 403, in step 403 Carry out once overall situation optical proximity correction.So may insure that whole chip does not has remaining mistake Labelling.

Preferably, it is also possible to intert in the interstage that step 402 is carried out and carry out once overall situation light Learn neighbouring correction, so that repairing effect is more preferable.Specifically, the interstage that step 402 is carried out Can be such as that indicative of local optical is neighbouring revises the number of times having been carried out predetermined threshold.This predetermined threshold It can be such as 10 times.It is to say, 10 times ought be had been carried out in step 402 based on office After the neighbouring correction of the indicative of local optical of portion's modification region, can carry out once based on whole chip complete Office's optical proximity correction, continues later with the neighbouring correction of indicative of local optical carrying out step 402, and Carry out 10 times.

So, whole rear optical proximity correction reparation is based primarily upon the neighbouring correction of indicative of local optical, and Overall situation optical proximity correction is carried out respectively with last in the indicative of local optical neighbouring interstage revised, Not only increase remediation efficiency, also ensure more preferable repairing quality.

The present invention is illustrated by above-described embodiment, but it is to be understood that, above-mentioned Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office It is limited to above-described embodiment, more kinds of modification can also be made according to the teachings of the present invention and repair Change, within these variants and modifications all fall within scope of the present invention.The present invention's Protection domain is defined by the appended claims and equivalent scope thereof.

Claims

1. the method repaired for rear optical proximity correction, it is characterised in that described side Method includes:

First step: the optical proximity correction mistake before repairing based on described rear optical proximity correction Error flag produced by journey forms local correction region；And

Second step: implement the neighbouring correction of indicative of local optical in described local correction region, until No longer produce error flag.

2. the method for claim 1, it is characterised in that described method is additionally included in Overall optical proximity correction based on whole chip is carried out after described second step.

3. method as claimed in claim 2, it is characterised in that described method is additionally included in The interstage that described second step is carried out intert carry out once the overall situation optical proximity correction.

4. method as claimed in claim 3, it is characterised in that described second step is carried out Interstage be: described indicative of local optical is neighbouring revises the number of times having been carried out predetermined threshold.

5. method as claimed in claim 4, it is characterised in that described predetermined threshold is 10.

6. the method as described in any one in claim 1-5, it is characterised in that institute The method of stating is for the optical proximity correction connecting aperture layer.

7. method as claimed in claim 6, it is characterised in that described connecting hole is contact Hole.

8. method as claimed in claim 7, it is characterised in that described indicative of local optical is neighbouring Revise and include that the edge of contact hole pattern moves.

9. method as claimed in claim 8, it is characterised in that the shifting that described edge moves Dynamic distance is 0.5 nanometer.

10. method as claimed in claim 7, it is characterised in that described local correction region Size be 0.9 micron of x 0.9 micron.