CN106353277B - Gas absorption cell based on copper scandium oxygen infrared transparent conducting film - Google Patents
Gas absorption cell based on copper scandium oxygen infrared transparent conducting film Download PDFInfo
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- 239000007789 gas Substances 0.000 title claims abstract description 101
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 75
- KLTQNZKJIQDFHD-UHFFFAOYSA-N oxocopper scandium Chemical compound [Cu]=O.[Sc] KLTQNZKJIQDFHD-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 28
- 239000010980 sapphire Substances 0.000 claims abstract description 28
- BKHSBMXUNIDCBQ-UHFFFAOYSA-N [O-2].[Sc+3].[Cu+2] Chemical compound [O-2].[Sc+3].[Cu+2] BKHSBMXUNIDCBQ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 239000000428 dust Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 239000013077 target material Substances 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 4
- 230000005494 condensation Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004570 mortar (masonry) Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 1
- 238000001311 chemical methods and process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 60
- 230000003287 optical effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007791 dehumidification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/03—Cuvette constructions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
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Abstract
The invention provides a gas absorption cell based on a copper-scandium-oxygen infrared transparent conductive film, wherein a vent hole is formed in the side wall of the gas absorption cell, a first shell and a second shell are arranged on the same side in the gas absorption cell, a third shell is arranged on the opposite side in the gas absorption cell, a gas space to be detected is arranged between the two sides, an infrared light source and an infrared detector are respectively arranged in the first shell and the second shell, and waterproof joints of the infrared light source and the infrared detector extend out through the gas absorption cell to serve as power supply and signal acquisition interfaces; the spherical reflector is arranged in the third shell, sapphire substrates are embedded on opposite surfaces in the first shell, the second shell and the third shell, a copper scandium oxygen infrared transparent conducting film is coated on the outer side of any one of the sapphire substrates through a chemical process, and a positive electrode and a negative electrode are plated on two sides of any one of the copper scandium oxygen infrared transparent conducting films respectively.
Description
Technical Field
The invention belongs to the technical field of infrared gas detection, and particularly relates to a gas absorption cell based on a copper-scandium-oxygen infrared transparent conductive film.
Background
In the existing infrared gas detection system, the gas absorption cells have various forms, and the main function of the gas absorption cells is to transmit light emitted by an infrared light source along a set path and to irradiate the light onto a detector. The gas absorption cell with an open structure can remarkably improve the response speed of the sensor, so that the sensor has excellent real-time performance. The gas absorption cell generally adopts an optical lens to improve the condensation efficiency of infrared light, and the type, parameters and the like of the optical lens depend on the physical size and the light-emitting parameters of a light source and a detector. However, the infrared light source, the detector and the optical lens in the open gas absorption cell are all in direct contact with the external environment, and water vapor and dust in the environment can adhere to the devices, so that the transmission of infrared light is affected, and the performance of the whole instrument is affected. When the moisture is large (such as a greenhouse) or the dust is large (such as a coal mine), the optical device, especially the optical window, loses the function, and in serious cases, the instrument fails.
When designing an infrared gas detector, people usually cover the surface of the gas chamber with a material having dust-proof and moisture-proof effects in view of the problems of dust-proof and moisture-proof, but this will result in a slow diffusion speed of the gas, thereby prolonging the response time of the detector. More importantly, when the material is used for a period of time, the pore diameter is blocked due to the adsorption of dust, and the gas exchange is not facilitated, so that people need to frequently use strong wind to remove the dust adsorbed between the pore diameters or replace the material. Different from the scheme, the invention provides a design scheme of a novel dustproof and moisture-proof air chamber based on the developed thin film material with the functions of transmitting infrared light and conducting, and the air chamber can form a good protection function on a light source, a detector and an optical reflector by virtue of the function of a transparent conducting film and an attached electric drive module, does not influence the transmission of the infrared light and the diffusion of gas, and simultaneously ensures the response speed, the reliability and the service life of an instrument.
Disclosure of Invention
Aiming at the defects of the prior art, the invention discloses a gas absorption cell based on a copper-scandium-oxygen infrared transparent conductive film, which solves the technical problems of poor dust prevention and moisture prevention methods and poor results of the traditional infrared gas detection instrument, thereby providing a solution for accurate gas measurement in severe environments with much dust, high humidity and the like.
The technical scheme of the invention is as follows: according to the gas absorption cell based on the copper-scandium-oxygen infrared transparent conductive film, the side wall of the gas absorption cell is provided with the vent hole, the first shell and the second shell are arranged on the same side in the gas absorption cell, the third shell is arranged on the opposite side in the gas absorption cell, a gas space to be detected is arranged between the two sides, an infrared light source and an infrared detector are respectively arranged in the first shell and the second shell, and waterproof joints of the infrared light source and the infrared detector extend out through the gas absorption cell to serve as power supply and signal acquisition interfaces;
the spherical reflector is arranged in the third shell, sapphire substrates are inlaid on opposite surfaces in the first shell, the second shell and the third shell, a copper scandium oxygen infrared transparent conductive film is deposited on the outer side of each sapphire substrate, a positive electrode and a negative electrode are plated on two sides of each copper scandium oxygen infrared transparent conductive film respectively, the positive electrode and the negative electrode are connected with a lead interface arranged on the wall of the gas absorption cell through leads respectively, a connecting point is sealed by insulating glue, when the positive electrode and the negative electrode are electrified, the copper scandium oxygen infrared transparent conductive film is heated to play a role in preventing moisture, the positive electrode is suspended, when the negative electrode is grounded, static electricity on the surface of the copper scandium oxygen infrared transparent conductive film can be conducted away, and a dust removing effect is achieved.
Preferably, the electrode material evaporated on the infrared transparent conductive film is gold, and the connecting contact point of the electrode and the conductive film is sealed by insulating glue.
Preferably, the infrared light source is a heat light source with the models of IR L715 and IR55, the infrared detector is a pyroelectric detector, and the reflecting surface of the spherical reflector is made of aluminum or gold.
Preferably, when the infrared light source, the infrared detector and the spherical reflector are installed, the main shaft of the spherical reflector should be parallel to the upper wall, the lower wall, the front wall and the rear wall of the gas absorption cell; the infrared light source and the infrared detector are positioned on the main section of the spherical reflector and are bilaterally symmetrical about the main axis of the spherical reflector, and the distance between the main section where the light source is positioned and the main section where the top point of the spherical surface is positioned is optimized to improve the light condensation efficiency.
In another aspect of the present invention, the method for detecting gas by using the gas absorption cell based on the copper scandium oxide infrared transparent conductive film includes the following steps:
s1: the infrared light signal generation process: under the action of the modulation signal, the infrared light source emits an initial infrared light signal, and the initial infrared light signal is transmitted to a gas space to be detected after penetrating through the sapphire substrate and the copper scandium oxygen infrared transparent conductive film on the first shell;
s2: stage 1 of the interaction between the infrared light signal and the gas molecules to be detected: under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the initial infrared light signal is absorbed to generate an infrared light signal of primary absorption;
s3: the infrared light signal reflection process: the primarily absorbed infrared light signal described in S2 is transmitted through the copper scandium oxygen infrared transparent conductive film on the second housing and the sapphire substrate, and then is incident on the spherical mirror; the spherical reflector reflects the infrared light signals which are absorbed once, and then the infrared light signals are transmitted to the gas space to be measured through the sapphire substrate and the copper scandium oxygen infrared transparent conductive film on the second shell;
s4: and 2, the infrared light signal and the gas molecule to be detected act: under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the primary infrared light signal is absorbed to generate a secondary absorbed infrared light signal;
s5: photoelectric signal conversion stage: the secondarily absorbed infrared light signal described in S4 is transmitted through the copper scandium oxide infrared transparent conductive film on the third shell and the sapphire substrate, and then is incident on the infrared detector, and two sensitive windows of the latter receive the infrared light signal matched with the response wavelength thereof, and convert the infrared light signal into a signal for output.
In another aspect of the present invention, a method for coating a copper scandium oxide infrared transparent conductive film is further included, including the following steps:
(1) firstly, preparing a high-purity copper scandium oxygen target material, which comprises the following specific steps: to analyze pure Cu (NO)3)2And Sc (NO)3)3The raw materials are taken as raw materials, absolute ethyl alcohol is taken as a solvent, and triethanolamine is taken as a solubilizer; 0.02mol of Cu (NO) is weighed out separately3)2And Sc (NO)3)3Dissolving the gel in 30ml of absolute ethyl alcohol, adding 3ml of triethanolamine as a solubilizer, magnetically stirring at normal temperature for 5 hours to form uniform sol, and drying the sol in a drying oven at 200 ℃ for 48 hours to obtain gel; grinding the gel into nano-scale powder particles by using an agate mortar,the powder was placed in an annealing furnace and annealed in air at 1200 ℃ for 10 h. Pressing the annealed powder into a solid target material with the diameter of 52mm and the thickness of 8mm by a tablet machine under the pressure of 20Mpa, and annealing for 5h in an annealing furnace at 1100 ℃ to finally obtain pure-phase CuScO2A target material;
(2) preparation of CuScO2The film comprises the following specific steps: with the prepared CuScO2The target material is prepared by depositing CuScO on a cleaned sapphire substrate by a magnetron sputtering method2The deposition conditions are that a direct current magnetron sputtering method is adopted, the sputtering power is 150W, the vacuum degree of the substrate is 1.0 × 10-5Pa, introducing Ar gas flow of 20sccm, controlling the substrate temperature to be 300 ℃, controlling the target base distance to be 7.5cm, and controlling the deposition time to be 30 min;
(3) the deposited film is placed in N2Annealing treatment is carried out, the annealing temperature is 900 ℃, and the annealing time is 5 hours.
The invention has the advantages and positive effects that:
1. the infrared transparent conductive film prepared on the sapphire substrate normally transmits infrared light, and the infrared light source, the spherical reflector and the infrared detector are respectively sealed, so that the infrared light source, the spherical reflector and the infrared detector are isolated from the external environment to preliminarily inhibit the influence of water vapor and dust on the infrared light source, the spherical reflector and the infrared detector.
2. Voltage is connected to the positive electrode and the negative electrode of each infrared transparent conductive film, the conductive film is heated, and water vapor on the surface of the conductive film is evaporated; static electricity on the surface of the infrared transparent conductive film is conducted away in a grounding mode, so that dust is difficult to adsorb on the conductive film, and the influence of water vapor and dust on the gas absorption pool is further inhibited.
3. The invention solves the technical problems of poor dust and moisture prevention method and effect of the open type air chamber of the traditional infrared gas detection instrument, and provides a solution for accurate measurement of gas in a severe environment with strong dust and high humidity.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a perspective view of the first housing;
FIG. 3 is a left side view of the present invention;
FIG. 4 is a perspective view of a second housing;
fig. 5 is a perspective view of a third housing;
FIG. 6 is a right side view of the present invention;
FIG. 7 is a front view of the present invention;
FIG. 8 is a rear view of the present invention;
FIG. 9 is a schematic view of a process for preparing a copper scandium oxide infrared transparent conductive film;
FIGS. 10a-10b are SEM images of a Cu-Sc-O IR transparent conductive film;
FIGS. 11a-11b are graphs for testing the transmittance of a copper scandium oxide infrared transparent conductive film;
fig. 12 is a conductivity test chart of the copper scandium oxide infrared transparent conductive film.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, the device is composed of a first housing 1, an infrared light source 2, a first waterproof joint 3, a first sapphire substrate 4, a first copper scandium oxygen infrared transparent conductive film 5, a second copper scandium oxygen infrared transparent conductive film 6, a second sapphire substrate 7, a second waterproof joint 8, an infrared detector 9, a second housing 10, a first lead interface 11, a first lead 12, a second lead 13, a first positive electrode 14, a first negative electrode 15, a second positive electrode 16, a second negative electrode 17, a fourth lead 18, a fifth lead 19, a second lead interface 20, a third lead 21, a third positive electrode 22, a third negative electrode 23, a sixth lead 24, a third housing 25, a spherical reflector 26, a third sapphire substrate 27, a third copper scandium oxygen infrared transparent conductive film 28 and a gas absorption cell housing 29.
The gas absorption cell shell 29 is a rectangular cavity structure and comprises six walls, namely a left wall, a right wall, a front wall, a rear wall, an upper wall and a lower wall; the left wall of the gas absorption cell is fixed with a first shell 1 and a second shell 10, and the right wall is fixed with a third shell 25; the left wall is attached with a first waterproof joint 3 and a second waterproof joint 8 which are respectively connected with the infrared light source 2 and the infrared detector 9 and used as power supply and signal acquisition interfaces of the infrared light source 2 and the infrared detector 9; the front wall and the rear wall are respectively attached with a first lead interface 11 and a second lead interface 20; the upper wall and the lower wall are sealing structures; the left wall, the right wall, the front wall, the rear wall, the upper wall and the lower wall of the shell of the gas absorption pool are all fixed with each other through screws.
The first copper scandium oxide infrared transparent conductive film 5 is prepared on the first sapphire substrate 4 through a chemical process and is fixed with the upper wall, the lower wall, the front wall and the rear wall of the first shell 1, so that the infrared light source 2 and the first lead interface 11 are sealed in a cuboid space; two sides of the first copper scandium oxygen infrared transparent conductive film 5 are plated with a first positive electrode 14 and a first negative electrode 15; the first positive electrode 14 is connected with the first lead 12, the first negative electrode 15 is connected with the fourth lead 18, and the connection point is sealed by insulating glue; the first wire 12 is connected with the first wire interface 11; the fourth conductor 18 is connected to the second conductor connection 20;
the second copper scandium oxide infrared transparent conductive film 6 is prepared on the second sapphire substrate 7 through a chemical process and is fixed with the upper wall, the lower wall, the front wall and the rear wall of the second shell 10, so that the infrared detector 9 and the second lead interface 20 are sealed in a cuboid space; a second positive electrode 16 and a second negative electrode 17 are plated on two sides of the second copper scandium oxygen infrared transparent conductive film 6; the second positive electrode 16 is connected with the second lead 13, the second negative electrode 17 is connected with the fifth lead 19, and the connection point is sealed by insulating glue; the second wire 13 is connected with the first wire interface 11; the fifth conductor 19 is connected to the second conductor connection 20;
a third copper scandium oxide infrared transparent conductive film 28 is prepared on a third sapphire substrate 27 by a chemical process and is fixed with the upper, lower, front and rear walls of the third shell 25, so that the spherical reflector 26 is sealed in a cuboid space; both sides of the third copper scandium oxygen infrared transparent conductive film 28 are plated with a third positive electrode 14 and a third negative electrode 15; the third positive electrode 14 is connected with a third lead 21, the third negative electrode 15 is connected with a sixth lead 24, and the connection point is sealed by insulating glue; the third line 21 is connected to the first line connection 11, and the sixth line 24 is connected to the second line connection 20.
Referring to fig. 2 and 3, the first housing 1 has a rectangular parallelepiped structure, and is composed of a first housing upper wall 51, a first housing front wall 52, a first housing lower wall 54, and a first housing rear wall 55; the upper, lower, front and rear walls of the gas absorption cell are fixed on the left wall of the gas absorption cell shell 29 through a first screw 30, a third screw 32, a sixth screw 35 and an eighth screw 37; the infrared light source 2 is fixed on the left wall of the gas absorption cell by the second screw 31, the fourth screw 33, the fifth screw 34 and the seventh screw 36, so that the infrared light source is disposed in the space formed by the left wall of the gas absorption cell and the four walls of the first housing 1, which are the upper wall, the lower wall, the front wall and the rear wall.
Referring to fig. 4 and 3, the second housing 10 has a rectangular parallelepiped structure and is composed of a second housing upper wall 56, a second housing front wall 57, a second housing lower wall 59, and a second housing rear wall 60; the upper, lower, front and rear walls of the gas absorption cell are fixed on the left wall of the gas absorption cell shell 29 through a ninth screw 38, an eleventh screw 40, a fourteenth screw 43 and a sixteenth screw 45; the infrared detector 9 is fixed to the left wall of the gas absorption cell by a tenth screw 39, a twelfth screw 41, a thirteenth screw 42, and a fifteenth screw 44, so that the infrared detector is disposed in a space formed by the left wall of the gas absorption cell and the four walls of the second housing 10, i.e., the upper wall, the lower wall, the front wall, and the rear wall.
Referring to fig. 5 and 6, the third housing 25 has a rectangular parallelepiped structure and is composed of a third housing upper wall 61, a third housing front wall 64, a third housing lower wall 63, and a third housing rear wall 62; the upper, lower, front and rear walls of the third casing 25 are fixed to the right wall of the gas absorption cell casing 29 by seventeenth screws 46, eighteenth screws 47, nineteenth screws 48 and twentieth screws 49; the spherical mirror 26 is fixed to the right wall of the gas absorption cell by glue so that the spherical mirror is disposed in a space defined by the right wall of the gas absorption cell and the four walls of the third casing 25, which are upper, lower, front and rear.
Referring to fig. 7 and 8, a plurality of circular vent holes 50 are attached to both front and rear walls of the gas absorption cell to allow gas in the external environment to diffuse into the interior of the gas absorption cell, and a first lead connection 11 and a second lead connection 20 are attached to the front and rear walls, respectively.
The infrared light source is a thermal light source, the types of the infrared light source are IR L715 and IR55, the infrared detector is a pyroelectric detector, the type of the pyroelectric detector can be determined according to the absorption line of the selected gas molecules to be detected, the reflecting surface material of the spherical reflector is aluminum or gold, when the infrared light source, the infrared detector and the spherical reflector are installed, the main shaft of the spherical reflector is parallel to the upper wall, the lower wall, the front wall and the rear wall of the gas absorption pool, the infrared light source and the infrared detector are located on the main section of the spherical reflector and are bilaterally symmetrical relative to the main shaft of the spherical reflector, the distance between the main section where the light source is located and the main section where the spherical vertex is located is optimized to improve the light condensation efficiency, and therefore infrared light emitted by the infrared light source can finally enter the sensitive surface of the detector after being reflected by the spherical.
The gas absorption cell has two working modes, namely a dehumidification mode, wherein the first positive electrode and the first negative electrode, the second positive electrode and the second negative electrode, and the third positive electrode and the third negative electrode are respectively used for providing power supply voltage for the first copper scandium oxide infrared transparent conducting film, the second copper scandium oxide infrared transparent conducting film and the third copper scandium oxide infrared transparent conducting film, heating the conducting films, evaporating water vapor on the surfaces of the conducting films, and playing a role in preventing moisture; secondly, a dustproof mode; at the moment, the first positive electrode, the second positive electrode and the third positive electrode are in a suspended state, and only the first negative electrode, the second negative electrode and the third negative electrode need to be grounded to conduct away static electricity on the surface of the conductive film, so that dust is not easy to adsorb on the conductive film, the infrared light is prevented from being influenced by the dust, and the dustproof effect is achieved.
Referring to FIG. 9, a magnetron sputtering method is adopted, firstly, a high-purity copper scandium oxide target material is prepared, the specific steps are that analytically pure Cu (NO3)2 and Sc (NO3)3 are used as raw materials, absolute ethyl alcohol is used as a solvent, triethanolamine is used as a solubilizer, 0.02mol of Cu (NO3)2 and Sc (NO3)3 are respectively weighed and dissolved in 30ml of absolute ethyl alcohol, 3ml of triethanolamine is added as the solubilizer, the mixture is magnetically stirred for 5 hours at normal temperature to form uniform sol, the obtained sol is placed in a drying oven to be dried for 48 hours at 200 ℃ to obtain gel, the gel is ground into nanoscale powder particles by an agate mortar, the powder is placed in an annealing furnace to be sputtered at 1200 ℃ for 10 hours, the annealed powder is placed in a tablet press machine under the pressure of 20Mpa, the annealed powder is pressed into a solid state with the thickness of 52mm, the annealing time of the thickness of 8mm, the annealing is performed for 5 hours at 1100 ℃, finally, pure-phase CuScO2 is prepared, a CuScO film is prepared, the steps that the temperature is 357 mm, the magnetron sputtering temperature is reached, the magnetron sputtering temperature, the sputtering temperature is 20MPa, the sputtering temperature is 20-35 cm, the annealing is reached, the deposition of the deposition temperature of the deposition of a magnetron sputtering target material is reached by the deposition temperature, the magnetron sputtering method, the deposition temperature, the deposition is 30-35 cm, the deposition temperature, the deposition of a deposition temperature of the.
Referring to fig. 10, the surface and cross-sectional morphology of the copper scandium oxide infrared transparent conductive film can be observed by a field emission scanning electron microscope (FE-SEM), as shown in fig. 10(a) and 10(b), respectively. As can be seen from the field emission scanning electron microscope pictures, the film is dense and uniform on the surface of the second and has no micro-cracks. The thin film was tightly attached to the sapphire substrate, and the thickness of the thin film was about 240 nm.
Referring to fig. 11, in the wavelength range of 250-3000nm, the transmittance of the copper scandium oxygen infrared transparent conductive film can be measured by an ultraviolet-visible-near infrared spectrophotometer, and in the wavelength range of 2.5-20 μm, the transmittance can be measured by a fourier transform infrared spectrometer. As can be seen from FIG. 11(a), the film transmittance is 40-65% in all visible light bands and as high as 65-85% in the near infrared spectrum. From FIG. 11(b), it can be seen that the transmittance of the film is over 85% in the mid-infrared band of 2.5 to 6 μm without any sharp absorption characteristics.
Referring to fig. 12, the conductivity of the copper scandium oxide infrared transparent conductive film is measured by a hall effect measurement system, and the measured temperature range is 90-300K. The resistivity of the film is gradually reduced along with the increase of the temperature, and the resistivity of the copper-scandium-oxygen infrared transparent conductive film at room temperature is 1.047 omega-cm, so that the film has higher conductivity.
The invention provides a gas absorption cell based on a copper-scandium-oxygen infrared transparent conductive film, which comprises the following working processes when being used for detecting gas: the infrared light source emits an initial infrared light signal under the action of a modulation signal, and transmits the initial infrared light signal to a gas space to be measured after penetrating through the first sapphire substrate and the first copper scandium oxygen infrared transparent conductive film; under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the initial infrared light signal is absorbed to generate an infrared light signal of primary absorption; the infrared light signals absorbed once are transmitted by the second copper scandium oxygen infrared transparent conductive film and the second sapphire substrate and then are incident on the spherical reflector; the spherical reflector reflects the infrared light signals which are absorbed once, and then the infrared light signals are transmitted to a gas space to be measured through the second sapphire substrate and the second copper scandium oxygen infrared transparent conductive film; under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the primary infrared light signal is absorbed to generate a secondary absorbed infrared light signal; the secondarily absorbed infrared light signals are transmitted by the third copper scandium oxygen infrared transparent conductive film and the third sapphire substrate and then are incident on an infrared detector, and two sensitive windows of the infrared detector respectively receive the infrared light signals matched with the response wavelengths of the infrared light signals and convert the infrared light signals into signals to be output.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (6)
1. A gas absorption cell based on a copper scandium oxygen infrared transparent conducting film is characterized in that: the side wall of the gas absorption cell is provided with a vent hole, the first shell and the second shell are arranged on the same side in the gas absorption cell, the third shell is arranged on the opposite side in the gas absorption cell, a gas space to be detected is arranged between the two sides, an infrared light source and an infrared detector are respectively arranged in the first shell and the second shell, and waterproof joints of the infrared light source and the infrared detector extend out through the gas absorption cell to serve as power supply and signal acquisition interfaces;
the third shell is internally provided with a spherical reflector, sapphire substrates are embedded on opposite surfaces in the first shell, the second shell and the third shell, a magnetron sputtering method is utilized to deposit a copper scandium oxygen infrared transparent conductive film on the outer side of each sapphire substrate, a positive electrode and a negative electrode are plated on two sides of each copper scandium oxygen infrared transparent conductive film respectively, the positive electrode and the negative electrode are connected with a wire interface arranged on the wall of the gas absorption cell through wires respectively, a connecting point is sealed by insulating glue, when the positive electrode and the negative electrode are electrified, the copper scandium oxygen infrared transparent conductive film is heated to play a role of moisture prevention, the positive electrode is suspended, and when the negative electrode is grounded, static electricity on the surface of the copper scandium oxygen infrared transparent conductive film can be guided away to play a role of dust removal.
2. The gas absorption cell as claimed in claim 1, wherein the gas absorption cell comprises: the electrode material evaporated on the infrared transparent conductive film is gold, and the connecting contact of the electrode and the conductive film is sealed by insulating glue.
3. The gas absorption cell as claimed in claim 1, wherein the infrared light source is a thermal light source with types IR L715 and IR55, the infrared detector is a pyroelectric detector, and the reflecting surface of the spherical reflector is made of aluminum or gold.
4. The gas absorption cell as claimed in claim 1, wherein the gas absorption cell comprises: when the infrared light source, the infrared detector and the spherical reflector are installed, the main shaft of the spherical reflector is parallel to the upper wall, the lower wall, the front wall and the rear wall of the gas absorption cell; the infrared light source and the infrared detector are positioned on the main section of the spherical reflector and are bilaterally symmetrical about the main axis of the spherical reflector, and the distance between the main section where the light source is positioned and the main section where the top point of the spherical surface is positioned is optimized to improve the light condensation efficiency.
5. A method for detecting a gas in a gas absorption cell based on a copper scandium oxide infrared transparent conductive film according to claim 1, which comprises the following steps:
s1: the infrared light signal generation process: under the action of the modulation signal, the infrared light source emits an initial infrared light signal, and the initial infrared light signal is transmitted to a gas space to be detected after penetrating through the sapphire substrate and the copper scandium oxygen infrared transparent conductive film on the first shell;
s2: stage 1 of the interaction between the infrared light signal and the gas molecules to be detected: under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the initial infrared light signal is absorbed to generate an infrared light signal of primary absorption;
s3: the infrared light signal reflection process: the primarily absorbed infrared light signal described in S2 is transmitted through the copper scandium oxygen infrared transparent conductive film on the third shell and the sapphire substrate, and then is incident on the spherical mirror; the spherical reflector reflects the infrared light signals which are absorbed once, and then the infrared light signals are transmitted to the gas space to be measured through the sapphire substrate and the copper scandium oxygen infrared transparent conductive film on the third shell;
s4: and 2, the infrared light signal and the gas molecule to be detected act: under the absorption action of the gas molecules to be detected, light matched with the absorption peak of the gas molecules to be detected in the primary infrared light signal is absorbed to generate a secondary absorbed infrared light signal;
s5: photoelectric signal conversion stage: the secondarily absorbed infrared light signal described in S4 is transmitted through the copper scandium oxide infrared transparent conductive film on the second housing and the sapphire substrate, and then is incident on the infrared detector, and two sensitive windows of the latter receive the infrared light signal matched with the response wavelength thereof, and convert the infrared light signal into a signal for output.
6. The gas absorption cell as claimed in claim 1, wherein the gas absorption cell comprises: the method for preparing the copper scandium oxide infrared transparent conductive film comprises the following steps:
(1) firstly, preparing a high-purity copper scandium oxygen target material, which comprises the following specific steps: to analyze pure Cu (NO)3)2And Sc (NO)3)3The raw materials are taken as raw materials, absolute ethyl alcohol is taken as a solvent, and triethanolamine is taken as a solubilizer; 0.02mol of Cu (NO) is weighed out separately3)2And Sc (NO)3)3Dissolving the gel in 30ml of absolute ethyl alcohol, adding 3ml of triethanolamine as a solubilizer, magnetically stirring at normal temperature for 5 hours to form uniform sol, and drying the sol in a drying oven at 200 ℃ for 48 hours to obtain gel; mixing the gelGrinding into nanometer powder particles with agate mortar, annealing in an annealing furnace at 1200 deg.C for 10 hr, pressing into solid target material with diameter of 52mm and thickness of 8mm under 20Mpa, annealing at 1100 deg.C for 5 hr to obtain pure-phase CuScO2A target material;
(2) preparation of CuScO2The film comprises the following specific steps: with the prepared CuScO2The target material is prepared by depositing CuScO on a cleaned sapphire substrate by a magnetron sputtering method2The deposition conditions are that a direct current magnetron sputtering method is adopted, the sputtering power is 150W, the vacuum degree of the substrate is 1.0 × 10-5Pa, introducing Ar gas flow of 20sccm, controlling the substrate temperature to be 300 ℃, controlling the target base distance to be 7.5cm, and controlling the deposition time to be 30 min;
(3) depositing the film on N by magnetron sputtering2Annealing treatment is carried out, the annealing temperature is 900 ℃, and the annealing time is 5 hours.
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