CN106340800A - Laser device - Google Patents
Laser device Download PDFInfo
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- CN106340800A CN106340800A CN201610136674.3A CN201610136674A CN106340800A CN 106340800 A CN106340800 A CN 106340800A CN 201610136674 A CN201610136674 A CN 201610136674A CN 106340800 A CN106340800 A CN 106340800A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a laser device, which comprises an outer shell, a cover plate, an emitting lens, a laser emitting and receiving circuit board and a semiconductor laser device D2. The principle of the laser device is that: after a circuit is connected, a +200 V high-voltage power supply, a VCC power supply (+12 V) and a +3.3 V power supply are switched on; a controller is powered on at the moment; and a single chip microcomputer generates a pulse encoded signal, so as to control output of laser by means of a driver. Therefore, the laser device provided by the invention controls the laser emission by adopting the single chip microcomputer, and is fast in response speed; and the laser device adopts few components, thus the stability is high.
Description
Technical field
The present invention relates to a kind of laser instrument.
Background technology
Development high-performance laser is to improving China instrumentation Development Level, lift my army's fighting capacity and have ten
Divide major and immediate significance.Laser was invented over 50 years, and military requirement leads the development of laser technology always.
One laser instrument weight drops to 3 kilograms by 25 kilograms, and power consumption declines 5 times, and all technical
Also have the technology leap that lifting is across the epoch, weight equipment that originally can only be vehicle-mounted, can apply to after weight reducing
Fighter plane, helicopter, unmanned plane, telecar, or even individual soldier carries, high-performance laser technology determines
The form of future war.
High-performance laser is in the critical period of technology leap at present.High-performance laser pump mode just by
Traditional xenon flash lamp pumping source is changed into semiconductor pumping sources, and it is left that efficiency of laser brings up to 10% by 1-2%
The right side, thus can accomplish that frequency is higher, energy is bigger, and volume is less, and weight is lighter.
More than 20hz laser instrument equips product at present still based on water-cooled, is limited to size, weight, guided missile,
On aircraft, application laser instrument ratio is relatively limited, even if application also has a lot of restrictions, can bring problems.Therefore
Laser guidance laser instrument in the past is not contained on bullet, on aircraft, only has detector, with quilt on bullet or on aircraft
Based on dynamic laser guidance and surmounted_laser beam guidance.More than 20hz laser instrument domestic highest index is 5.5kg, still
It is in laboratory stage, far from meeting practical application request.Main Bottleneck is Miniaturization Design, harsh
Thermal design under environment and highly reliable design.
Content of the invention
It is an object of the present invention to provide a kind of laser instrument, it has higher reliability.
The present invention solve technical problem adopt the following technical scheme that a kind of laser instrument, it include shell, cover plate,
Transmitting camera lens, Laser emission circuit board for receiving and semiconductor laser d2；
Described shell is in cuboid, and it has been internally formed accommodation space；Described Laser emission receiving circuit
Plate is arranged in the accommodation space of described shell；And be fixed on the wall of described shell；
Described transmitting camera lens is fixed on the left end of described shell, and is fixed on the wall of described shell；
Described semiconductor laser d2 is located at described inside the shell；The direction of the laser of its transmitting is to the left；When described
During semiconductor laser d2 transmitting laser, the left side wall of described shell offers the second opening, described partly lead
The laser that body laser d2 is launched can pass through described second opening, be irradiated in outer by described transmitting camera lens
Outside shell；
Described Laser emission circuit board for receiving is square, offers location hole respectively in its four corners, and leads to
Cross this four location holes to be installed in the accommodation space of described shell, described accommodation space is isolated described sharp
The electronics structure chamber of light device；
Described Laser emission circuit board for receiving includes controller, rs422 communication interface, driver and laser arteries and veins
There is circuit in punching；
Described controller is the single-chip microcomputer of model atxmega32a4-au, and described single-chip microcomputer includes 44 pipes
Foot, the 8th pin of wherein said single-chip microcomputer, the 18th pin, the 30th pin and the 38th pin ground connection；Institute
The 9th pin, the 19th pin, the 31st pin and the 39th pin of stating single-chip microcomputer connect+3.3v power supply；
Described controller is connected with rs422 communication interface, and described rs422 communication interface includes model
The chip of max3490esa；26th pin of described controller connects the core of described model max3490esa
2nd pin of piece；The of 27th pin of described controller and the chip of described model max3490esa
3 pins connect；4th pin ground connection of the chip of described model max3490esa；And described model
It is connected with resistance r8 between 7th pin of the chip of max3490esa and the 8th pin；5th pin and the 6th
It is connected with resistance r9 between pin；1st pin of the chip of described model max3490esa is connected to
+ 3.3v power supply, described+3.3v power supply is DC source；
Described controller is connected with driver signal, and described driver is the chip of model ixdn604, institute
The inb of the chip that the 12nd pin stating controller is connected to described model ixdn604 by resistance r4 manages
Foot；And one end of resistance r6 is grounded, the other end is also connected to the inb of the chip of described model ixdn604
Pin；The gnd pin ground connection of the chip of described model ixdn604, the core of described model ixdn604
The vcc pin of piece is connected to+12v DC source by resistance r3；One end ground connection of electric capacity c3, the other end
It is connected to the vcc pin of the chip of described model ixdn604；
Described driver occurs circuit to be connected with described laser pulse, thus under the driving of described driver,
Produce laser pulse；Described laser pulse occurs circuit to include field effect transistor q1, diode d1 and partly lead
Body laser d2；The outb pin of the chip of described model ixdn604 is connected to described by resistance r5
The g end of field effect transistor q1；The d end of described field effect transistor q1 is connected to the power supply of+200v by resistance r2；
The s end ground connection of described field effect transistor；One end of electric capacity c1 and c2 is grounded respectively simultaneously；The other end is connected to
Together, and be connected to+200v power supply；The minus earth of described diode d1, described semiconductor laser d2
Positive pole be grounded by resistance r7；The positive pole of described diode d1 and the negative pole of described semiconductor laser d2
Connect, and be connected to one end of electric capacity c4, the other end of described electric capacity c4 is connected to described field effect transistor q1
D end.
Optionally, described Laser emission circuit board for receiving also include detection circuit, the first amplifying circuit, second
Amplifying circuit and sample circuit；
Described detection circuit includes the photodetector of model apd1, resistance r10, resistance r20 and electric capacity
c10；1st pin of described photodetector is connected to+200v high voltage power supply by resistance r10；And it is described
First pin of photodetector is grounded also by electric capacity c10；2nd pin ground connection of described photodetector；
Described detection circuit is connected to described first amplifying circuit；Described first amplifying circuit includes model
The chip of opa356, resistance r20, resistance r30, resistance r40, resistance r50, resistance r60, electric capacity c20
With electric capacity c30；The negative pole end of described photodetector is connected to the-in of the chip of described model opa356
Pin, and the negative pole end of described photodetector is connected to described model opa356 also by resistance r50
Chip out pin；The negative pole end of described photodetector connects also by electric capacity c20 and resistance r60
Out pin in the chip of described model opa356；The v+ pin of the chip of described model opa356
It is connected to+5.0v vcc power supply, the v+ pin of the chip of described model opa356 is also by electric capacity c30
Ground connection；The v- pin of the chip of described model opa356 is grounded by resistance r40, described model
+ in the pin of the chip of opa356 is connected to+5.0vvcc power supply, described model by resistance r20
+ in the pin of the chip of opa356 is grounded also by resistance r30；
Described first amplifying circuit is connected to described second amplifying circuit, and described second amplifying circuit includes model
Chip for ad8369, electric capacity c40, electric capacity c50, electric capacity c60, electric capacity c70, electric capacity c80, electric capacity
C90, electric capacity c100, resistance r70 and resistance r90；The out pin of the chip of described model opa356
It is connected to the 16th pin of the chip of described model ad8369 by resistance r70 and electric capacity c40, described
1st pin of the chip of model ad8369 is grounded by electric capacity c50；The core of described model ad8369
Piece the 15th pin ground connection, chip the 12nd pin of described model ad8369, the 13rd pin, the 14th
Pin is all connected to+5.0vvcc power supply；One end of electric capacity c60 is connected to+5.0v vcc power supply, the other end
Ground connection；11st pin of the chip of described model ad8369 is grounded by electric capacity c70, described model
10th pin of the chip of ad8369 is grounded by electric capacity c80；The of the chip of described model ad8369
2 pin ground connection；9th pin of the chip of described model ad8369 is connect by electric capacity c90 and resistance r90
Ground, the 8th pin of the chip of described model ad8369 is grounded by electric capacity c100；
Described first amplifying circuit is connected to described sample circuit, and described sample circuit includes model mcp3424
Chip, the 13rd pin of the chip of described model mcp3424 is connected to described model opa356
The out pin of chip；
Described sample circuit is connected with described controller；10th pin of described single-chip microcomputer is connected to described model
7th pin of the chip for mcp3424, the 11st pin of described single-chip microcomputer is connected to described model
8th pin of the chip of mcp3424；
Described second amplifying circuit is connected with described controller, and the 3rd pin of described single-chip microcomputer connects to described
7th pin of the chip of model ad8369；4th pin of described single-chip microcomputer connects to described model
6th pin of the chip of ad8369；5th pin of described single-chip microcomputer connects to described model ad8369
Chip the 5th pin；6th pin of described single-chip microcomputer connects the chip to described model ad8369
4th pin；7th pin of described single-chip microcomputer connects the 3rd pin of the chip to described model ad8369.
The invention has the following beneficial effects: the laser instrument principle of the present invention is: after foregoing circuit is connected,
Connect+200v high voltage power supply, vcc power supply (+12v) and+3.3v power supply；Now controller energising；Now
Pulse code signal is produced by single-chip microcomputer, to control the output of laser through driver；It can be seen that the present invention's swashs
Light device is controlled to Laser emission using single-chip microcomputer, and its response speed is fast；And unit of the present invention
Part is less, and therefore, stability is higher.
Brief description
Fig. 1 is that rs422 communication interface, driver and the laser pulse of the present invention occur circuit and described control
The annexation schematic diagram of device；
Fig. 2 is the detection circuit of the present invention, the first amplifying circuit, the second amplifying circuit and sample circuit and institute
State the annexation schematic diagram of controller；
Fig. 3 is the structural representation of the power module of the present invention；
Fig. 4 is the structural representation of the laser instrument of the present invention；
Fig. 5 is the structural representation of the transmitting camera lens of the laser instrument of the present invention；
In figure labelling is illustrated as: 1- shell；2- cover plate；3- launches camera lens；4- Laser emission circuit board for receiving；
5- semiconductor laser d2.
Specific embodiment
With reference to embodiment and accompanying drawing, technical scheme is further elaborated.
Embodiment 1
Present embodiments provide a kind of laser instrument, it includes shell 1, cover plate 2, transmitting camera lens 3, laser are sent out
Penetrate circuit board for receiving 4 and semiconductor laser d2 5；
Described shell is in cuboid, and it has been internally formed accommodation space；Open on the upper side wall of described shell
It is provided with the first opening, described Laser emission circuit board for receiving is arranged at described inside the shell by described first opening；
Described cover plate covers described first opening, and is fixed on described shell.
Described transmitting camera lens is fixed on the left end of described shell it is possible to be fixed on the side wall of described shell；
The laser that described semiconductor laser d2 is launched is focused backward emission by described transmitting camera lens.
In the present embodiment, described semiconductor laser d2 is located at described inside the shell；The direction of the laser of its transmitting
To the left；When described semiconductor laser d2 transmitting laser, the left side wall of described shell offers second and opens
Mouthful, the laser that described semiconductor laser d2 is launched can pass through described second opening, by described transmitting
Camera lens is irradiated in housing exterior.
In the present embodiment, described semiconductor laser d2 can be fixed on described Laser emission circuit board for receiving
On, positioned at the middle of described Laser emission circuit board for receiving, such that it is able to be received by described Laser emission
Circuit board drives described semiconductor laser d2 to launch laser.
In the present embodiment, described Laser emission circuit board for receiving is square, offers respectively in its four corners
Location hole, and be installed in the accommodation space of described shell by this four location holes, described accommodation space is
Constitute the electronics structure chamber of described laser instrument；Thus it is described when being fixed on described semiconductor laser d2
After electronics structure chamber, described semiconductor laser d2 can light according to corresponding pulsed drive.
Described Laser emission circuit board for receiving is fixed on described inside the shell, and it includes controller, rs422 communication
There is circuit in interface, driver and laser pulse.
Described controller is the single-chip microcomputer of model atxmega32a4-au, and described single-chip microcomputer includes 44 pipes
Foot, the 8th pin of wherein said single-chip microcomputer, the 18th pin, the 30th pin and the 38th pin ground connection；Institute
The 9th pin, the 19th pin, the 31st pin and the 39th pin of stating single-chip microcomputer connect+3.3v power supply.
Described controller is connected with rs422 communication interface, and specifically, described rs422 communication interface adopts
Max3490esa chip (rs422 communication chip) is realized；26th pin of described controller connects described
2nd pin of rs422 communication chip；27th pin of described controller and described rs422 communication chip
3rd pin connects；4th pin ground connection of described rs422 communication chip；And described rs422 communication chip
The 7th pin and the 8th pin between be connected with resistance r8；It is connected with electricity between 5th pin and the 6th pin
Resistance r9；1st pin of described max3490esa chip is connected to+3.3v power supply, and described+3.3v power supply is
DC source.
Described controller is connected with driver signal, and specifically, described driver is ixdn604 chip, institute
The 12nd pin stating controller is connected to the inb pin of described ixdn604 chip by resistance r4；And electricity
One end ground connection of resistance r6, the other end is also connected to the inb pin of described ixdn604 chip；Described ixdn604
The gnd pin ground connection of chip, its vcc pin is connected to described+12v DC source by resistance r3；Electricity
Hold one end ground connection of c3, the other end is connected to the vcc pin of described ixdn604 chip, with to described vcc
End carries out voltage stabilizing；By above-mentioned connection, export when described controller passes through its 12nd pin (pc2 pin)
During switching signal, can be by the outb pin output powerful switching current letter of described ixdn604 chip
Number.
Described driver occurs circuit to be connected with described laser pulse, thus under the driving of described driver,
Produce laser pulse；Specifically, described laser pulse occurs circuit to include field effect transistor q1 and diode d1；
The outb pin of described driver (ixdn604 chip) is connected to described field effect transistor q1 by resistance r5
G end；The d end of described field effect transistor q1 is connected to the power supply of+200v by resistance r2；Described field effect
Should pipe s end ground connection；One end of described electric capacity c1 and c2 is grounded respectively simultaneously；The other end links together,
And it is connected to+200v power supply；So that electric capacity c1 and c2 forms the filter capacitor of high input voltage power supply；Institute
State the minus earth of diode d1, the positive pole of described semiconductor laser d2 is grounded by resistance r7；Described
The positive pole of diode d1 is connected with the negative pole of described semiconductor laser d2, and is connected to one end of electric capacity c4,
The other end of described electric capacity c4 is connected to the d end of described field effect transistor q1.
In the present embodiment, described laser instrument also includes power module, and described power module includes chip lm1117,
The vin pin of described chip lm1117 is connected to+12v power supply；After electric capacity c5 and electric capacity c6 parallel connection, one
End is connected to+12v power supply, and the other end is grounded；After electric capacity c7 and electric capacity c8 parallel connection, one end is connected to chip
The vout end of lm1117, the other end is grounded；Now can be exported by the vout end of described chip lm1117
The DC source of+3.3v.
The laser instrument principle of the present invention is: after foregoing circuit is connected, connects+200v high voltage power supply, vcc
Power supply (+12v) and+3.3v power supply；Now controller energising；Now pulse code letter is produced by single-chip microcomputer
Number, to control the output of laser through driver；It can be seen that the laser instrument of the present invention is sent out to laser using single-chip microcomputer
Penetrate and be controlled, its response speed is fast；And element of the present invention is less, therefore, stability is relatively
High.
Now ixdn604 chip inb signal is pwm pulse code signal, and the effect of described ixdn604
It is turning on and off through resistance r5 driving FET q1 (moseft), and the opening of scene effect pipe
Logical instantaneous, it can provide the grid voltage between source electrodes that sufficiently large charging current makes field effect transistor to rapidly rise to
Desirable value is it is ensured that field effect transistor q1 can quickly open and not exist the higher-order of oscillation of rising edge, field effect transistor
During q1 conducting, driver is provided that as a low-impedance as possible path supplies mosfet grid source capacitance electricity
Quickly releasing of pressure, ensures that field effect transistor q1 can rapidly switch off；Resistance r3 and electric capacity c3 composition low-pass filtering,
After vcc plant-grid connection after filtering, noise can be reduced.
In the present embodiment, described ixdn604 chip is superfast mosfet driving chip, turns on and off
Time is very fast, reaches 5ns.
In the present embodiment, wherein resistance r2 is charging current limiter resistance, and resistance r7 is pulse current current-limiting resistance,
Electric capacity c4 is storage capacitor, and+200v power supply is input HVB high voltage bias, and diode d1 is clamp diode,
D2 is semiconductor laser, and field effect transistor q1 is controlling switch.
When field effect transistor q1 disconnects ,+200v HVB high voltage bias is passed through resistance r2 and is charged to storage capacitor c4,
The voltage at electric capacity c4 two ends raises immediately, and after charging complete, the voltage uc at storage capacitor two ends is and high pressure
Bias voltage+200v is equal, and after field effect transistor q1 closes, storage capacitor c4 passes through field effect transistor q1, puts
The loop instantaneous discharge that electric current-limiting resistance r7 and semiconductor laser d2 is formed, is added in semiconductor laser
The voltage at device d2 two ends is -200v.
The laser instrument of the present invention can also include host computer, and described host computer can pass through rs422 communication interface
Communicated with controller, and current coded pulse pattern can be inquired about by host computer, can basis
The demand of user produces wanted coded pulse pattern, produces pseudorandom pattern by the intervalometer of single-chip microcomputer, this
Plant the effect that pseudo noise code can play encryption.After having inquired about pattern, current pattern can be set, setting
After good, single-chip microcomputer sends pseudorandom pattern, through driver, to control opening and closing of field effect transistor q1
Disconnected, so control the luminous of semiconductor laser d2 so that semiconductor laser d2 according to button coding
Realize luminous.
In the present embodiment, by realize to transmitting laser echo detection, described Laser emission receiving circuit
Plate also includes detection circuit, the first amplifying circuit, the second amplifying circuit and sample circuit.
Specifically, described detection circuit includes the photodetector of model apd1, resistance r10, resistance r20
With electric capacity c10；It is high that the positive terminal (the 1st pin) of described photodetector is connected to hv by resistance r10
Voltage source；And the positive terminal of described photodetector is grounded also by electric capacity c10；Described photodetector
2nd pin ground connection.
Described detection circuit is connected to described first amplifying circuit；Described first amplifying circuit includes model
The chip (operational amplifier) of opa356, resistance r20, resistance r30, resistance r40, resistance r50, electricity
Resistance r60, electric capacity c20 and electric capacity c30；The negative pole end of described photodetector is connected to described opa356 core
- in the pin of piece, and the negative pole end of described photodetector is connected to described opa356 also by resistance r50
The out pin of chip；The negative pole end of described photodetector is connected to also by electric capacity c20 and resistance r60
The out pin of described opa356 chip；The v+ pin of described opa356 chip is connected to vcc power supply
(+5.0v), the v+ pin of described opa356 chip is grounded also by electric capacity c30；Described opa356 chip
V- pin be grounded by resistance r40 ,+in the pin of described opa356 chip is connected to by resistance r20
Vcc power supply (+5.0v) ,+in pin of described opa356 chip is grounded also by resistance r30.
Described first amplifying circuit is connected to described second amplifying circuit, and described second amplifying circuit includes model
Chip for ad8369, electric capacity c40, electric capacity c50, electric capacity c60, electric capacity c70, electric capacity c80, electric capacity
C90, electric capacity c100, resistance r70 and resistance r90；The out pin of described opa356 chip passes through resistance
R70 and electric capacity c40 is connected to the 16th pin (inhi) of described ad8369 chip, described ad8369 core
1st pin (inlo) of piece is grounded by electric capacity c50；15th pin ground connection of described ad8369 chip,
Its 12nd pin, the 13rd pin, the 14th pin are all connected to vcc power supply (+5.0v)；Electric capacity c60
One end be connected to vcc power supply (+5.0v), the other end is grounded；11st pin of described ad8369 chip
It is grounded by electric capacity c70, the 10th pin of described ad8369 chip is grounded by electric capacity c80；Described
2nd pin ground connection of ad8369 chip；9th pin of described ad8369 chip passes through electric capacity c90 and electricity
Resistance r90 ground connection, the 8th pin of described ad8369 chip is grounded by electric capacity c100.
Described first amplifying circuit is also attached to described sample circuit, and described sample circuit includes model
The chip of mcp3424, the 13rd pin (ch4+) of described mcp3424 chip is connected to described opa356
The out pin of chip.
Described sample circuit is connected with described controller；10th pin of described single-chip microcomputer is connected to described
7th pin (sda) of mcp3424 chip, the 11st pin of described single-chip microcomputer is connected to described mcp3424
8th pin (scl) of chip.
Described second amplifying circuit is connected with described controller, and the 3rd pin of described single-chip microcomputer connects to described
7th pin of ad8369 chip；4th pin of described single-chip microcomputer connects to the 6th of described ad8369 chip the
Pin；5th pin of described single-chip microcomputer connects to the 5th pin of described ad8369 chip；Described single-chip microcomputer
The 6th pin connect to the 4th pin of described ad8369 chip；7th pin of described single-chip microcomputer connect to
3rd pin of described ad8369 chip；With the times magnification to described second amplifying circuit by described controller
Number is controlled.
In the present embodiment, when the laser echo signal of described laser instrument is detected through described photodetector,
Transmit to the first amplifying circuit；And be amplified via operational amplifier opa356；Signal after amplification passes through
Second amplifying circuit is amplified again, and the signal through amplifying twice can outwards export；I.e. described electric capacity
Holding wire can be connected between c90 and resistance r90, and this holding wire can connect to single-chip microcomputer or ad
Change-over circuit.
Laser echo signal through once amplifying is sampled by sample circuit simultaneously, and this sampling is believed
Number input controller, described controller according to described sampled signal, the laser echo signal once amplifying
The size of amplitude, controls the gain of the second amplifying circuit, thus realizing the control of the gain to laser echo signal
System.
In the present embodiment, described hv high voltage power supply uses Switching Power Supply or modular power source；Its voltage can
With up to+200v；The sensitivity height of described apd1 photodetector, small volume, low in energy consumption, reliability is high,
The advantages of electromagnetism interference is strong, dynamic range is big；The multiplication of the inside light quantum of apd1 photodetector,
So that photoelectric current is significantly doubled, significantly improve the sensitivity of photodetector；Described apd1 photodetector choosing
Select is a near-infrared enhancement mode avalanche probe.
The signal that described apd1 photodetector detects is current signal, and needs the first amplifying circuit will be described
Current signal be transformed to voltage signal.Described voltage signal is faint voltage signal.Described first amplification
What the trsanscondutance amplifier of circuit was selected is the opa356 chip of op company.Opa356 chip have low-power consumption,
Low noise, the advantage of wide bandwidth, but it needs additional extra discrete component.The electric capacity c2 of described output and electricity
Resistance r5, resistance r6 are feedback circuits, play the effect of quick regulation system.Described electric capacity c3 is filter capacitor.
Described resistance r2 and resistance r3 is power source reference divider resistance.
The amplifier of described second amplifying circuit using the ad8369 gain-programmed amplifier being ad company,
Ad8369 chip is digital program controlled gain, and gain step size is 3db.The gain of the present embodiment is by digital program controlled increasing
Benefit modulation is maximum, is connected on+5.0v, can export maximum gain.And the gain of its output can be passed through
Controller is controlled.
The laser instrument of the present invention its adopt efficient semiconductor laser, its small volume, repetition rate is high, reduces
Power supply pressure.The efficiency of described laser instrument is made to bring up to 10% about, and described semiconductor laser
Life-span length, also solve other laser instrument need regularly replace LASER Light Source a difficult problem；Improve system
Reliability.
The sequencing of above example only for ease of description, does not represent the quality of embodiment.
Last it is noted that above example is only in order to illustrating technical scheme, rather than it is limited
System；Although being described in detail to the present invention with reference to the foregoing embodiments, those of ordinary skill in the art
It is understood that it still can be modified to the technical scheme described in foregoing embodiments, or to it
Middle some technical characteristics carry out equivalent；And these modifications or replacement, do not make appropriate technical solution
Essence departs from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (2)
1. a kind of laser instrument is it is characterised in that include shell, cover plate, transmitting camera lens, Laser emission reception
Circuit board and semiconductor laser d2；
Described shell is in cuboid, and it has been internally formed accommodation space；Described Laser emission receiving circuit
Plate is arranged in the accommodation space of described shell；And be fixed on the wall of described shell；
Described transmitting camera lens is fixed on the left end of described shell, and is fixed on the wall of described shell；
Described semiconductor laser d2 is located at described inside the shell；The direction of the laser of its transmitting is to the left；When described
During semiconductor laser d2 transmitting laser, the left side wall of described shell offers the second opening, described partly lead
The laser that body laser d2 is launched can pass through described second opening, be irradiated in outer by described transmitting camera lens
Outside shell；
Described Laser emission circuit board for receiving is square, offers location hole respectively in its four corners, and leads to
Cross this four location holes to be installed in the accommodation space of described shell, described accommodation space is isolated described sharp
The electronics structure chamber of light device；
Described Laser emission circuit board for receiving includes controller, rs422 communication interface, driver and laser arteries and veins
There is circuit in punching；
Described controller is the single-chip microcomputer of model atxmega32a4-au, and described single-chip microcomputer includes 44 pipes
Foot, the 8th pin of wherein said single-chip microcomputer, the 18th pin, the 30th pin and the 38th pin ground connection；Institute
The 9th pin, the 19th pin, the 31st pin and the 39th pin of stating single-chip microcomputer connect+3.3v power supply；
Described controller is connected with rs422 communication interface, and described rs422 communication interface includes model
The chip of max3490esa；26th pin of described controller connects the core of described model max3490esa
2nd pin of piece；The of 27th pin of described controller and the chip of described model max3490esa
3 pins connect；4th pin ground connection of the chip of described model max3490esa；And described model
It is connected with resistance r8 between 7th pin of the chip of max3490esa and the 8th pin；5th pin and the 6th
It is connected with resistance r9 between pin；1st pin of the chip of described model max3490esa is connected to
+ 3.3v power supply, described+3.3v power supply is DC source；
Described controller is connected with driver signal, and described driver is the chip of model ixdn604, institute
The inb of the chip that the 12nd pin stating controller is connected to described model ixdn604 by resistance r4 manages
Foot；And one end of resistance r6 is grounded, the other end is also connected to the inb of the chip of described model ixdn604
Pin；The gnd pin ground connection of the chip of described model ixdn604, the core of described model ixdn604
The vcc pin of piece is connected to+12v DC source by resistance r3；One end ground connection of electric capacity c3, the other end
It is connected to the vcc pin of the chip of described model ixdn604；
Described driver occurs circuit to be connected with described laser pulse, thus under the driving of described driver,
Produce laser pulse；Described laser pulse occurs circuit to include field effect transistor q1, diode d1 and partly lead
Body laser d2；The outb pin of the chip of described model ixdn604 is connected to described by resistance r5
The g end of field effect transistor q1；The d end of described field effect transistor q1 is connected to the power supply of+200v by resistance r2；
The s end ground connection of described field effect transistor；One end of electric capacity c1 and c2 is grounded respectively simultaneously；The other end is connected to
Together, and be connected to+200v power supply；The minus earth of described diode d1, described semiconductor laser d2
Positive pole be grounded by resistance r7；The positive pole of described diode d1 and the negative pole of described semiconductor laser d2
Connect, and be connected to one end of electric capacity c4, the other end of described electric capacity c4 is connected to described field effect transistor q1
D end.
2. laser instrument according to claim 1 is it is characterised in that described Laser emission circuit board for receiving
Also include detection circuit, the first amplifying circuit, the second amplifying circuit and sample circuit；
Described detection circuit includes the photodetector of model apd1, resistance r10, resistance r20 and electric capacity
c10；1st pin of described photodetector is connected to+200v high voltage power supply by resistance r10；And it is described
First pin of photodetector is grounded also by electric capacity c10；2nd pin ground connection of described photodetector；
Described detection circuit is connected to described first amplifying circuit；Described first amplifying circuit includes model
The chip of opa356, resistance r20, resistance r30, resistance r40, resistance r50, resistance r60, electric capacity c20
With electric capacity c30；The negative pole end of described photodetector is connected to the-in of the chip of described model opa356
Pin, and the negative pole end of described photodetector is connected to described model opa356 also by resistance r50
Chip out pin；The negative pole end of described photodetector connects also by electric capacity c20 and resistance r60
Out pin in the chip of described model opa356；The v+ pin of the chip of described model opa356
It is connected to+5.0v vcc power supply, the v+ pin of the chip of described model opa356 is also by electric capacity c30
Ground connection；The v- pin of the chip of described model opa356 is grounded by resistance r40, described model
+ in the pin of the chip of opa356 is connected to+5.0vvcc power supply, described model by resistance r20
+ in the pin of the chip of opa356 is grounded also by resistance r30；
Described first amplifying circuit is connected to described second amplifying circuit, and described second amplifying circuit includes model
Chip for ad8369, electric capacity c40, electric capacity c50, electric capacity c60, electric capacity c70, electric capacity c80, electric capacity
C90, electric capacity c100, resistance r70 and resistance r90；The out pin of the chip of described model opa356
It is connected to the 16th pin of the chip of described model ad8369 by resistance r70 and electric capacity c40, described
1st pin of the chip of model ad8369 is grounded by electric capacity c50；The core of described model ad8369
Piece the 15th pin ground connection, chip the 12nd pin of described model ad8369, the 13rd pin, the 14th
Pin is all connected to+5.0vvcc power supply；One end of electric capacity c60 is connected to+5.0v vcc power supply, the other end
Ground connection；11st pin of the chip of described model ad8369 is grounded by electric capacity c70, described model
10th pin of the chip of ad8369 is grounded by electric capacity c80；The of the chip of described model ad8369
2 pin ground connection；9th pin of the chip of described model ad8369 is connect by electric capacity c90 and resistance r90
Ground, the 8th pin of the chip of described model ad8369 is grounded by electric capacity c100；
Described first amplifying circuit is connected to described sample circuit, and described sample circuit includes model
The chip of mcp3424, the 13rd pin of the chip of described model mcp3424 is connected to described model
The out pin of the chip of opa356；
Described sample circuit is connected with described controller；10th pin of described single-chip microcomputer is connected to described model
7th pin of the chip for mcp3424, the 11st pin of described single-chip microcomputer is connected to described model
8th pin of the chip of mcp3424；
Described second amplifying circuit is connected with described controller, and the 3rd pin of described single-chip microcomputer connects to described
7th pin of the chip of model ad8369；4th pin of described single-chip microcomputer connects to described model
6th pin of the chip of ad8369；5th pin of described single-chip microcomputer connects to described model ad8369
Chip the 5th pin；6th pin of described single-chip microcomputer connects the chip to described model ad8369
4th pin；7th pin of described single-chip microcomputer connects the 3rd pin of the chip to described model ad8369.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610136674.3A CN106340800B (en) | 2016-03-10 | 2016-03-10 | Laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610136674.3A CN106340800B (en) | 2016-03-10 | 2016-03-10 | Laser |
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| Publication Number | Publication Date |
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| CN106340800A true CN106340800A (en) | 2017-01-18 |
| CN106340800B CN106340800B (en) | 2019-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610136674.3A Expired - Fee Related CN106340800B (en) | 2016-03-10 | 2016-03-10 | Laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110798190A (en) * | 2019-10-08 | 2020-02-14 | 南京航空航天大学 | Electromagnetic interference prevention electronic switch system |
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN112510479A (en) * | 2020-12-02 | 2021-03-16 | 南昌攀藤科技有限公司 | Laser device |
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| EP0215311A2 (en) * | 1985-08-16 | 1987-03-25 | Kabushiki Kaisha Toshiba | Laser diode driving circuit |
| JPS62216285A (en) * | 1986-03-06 | 1987-09-22 | Fujitsu Ltd | Drive circuit for light-emitting element |
| US4856011A (en) * | 1985-01-30 | 1989-08-08 | Ricoh Company, Ltd. | Semiconductor laser control circuit |
| CN103280694A (en) * | 2013-05-27 | 2013-09-04 | 四川大学 | FPGA (Field programmable gate array)-based driving power supply device of high-power pulse semiconductor laser unit |
| CN104714220A (en) * | 2013-12-11 | 2015-06-17 | 重庆爱特光电有限公司 | Laser emitting circuit, laser receiving circuit, distance calculating circuit and equipment thereof |
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|---|---|---|---|---|
| US4400812A (en) * | 1981-06-15 | 1983-08-23 | Santa Barbara Research Center | Laser drive circuits |
| US4856011A (en) * | 1985-01-30 | 1989-08-08 | Ricoh Company, Ltd. | Semiconductor laser control circuit |
| EP0215311A2 (en) * | 1985-08-16 | 1987-03-25 | Kabushiki Kaisha Toshiba | Laser diode driving circuit |
| JPS62216285A (en) * | 1986-03-06 | 1987-09-22 | Fujitsu Ltd | Drive circuit for light-emitting element |
| CN103280694A (en) * | 2013-05-27 | 2013-09-04 | 四川大学 | FPGA (Field programmable gate array)-based driving power supply device of high-power pulse semiconductor laser unit |
| CN104714220A (en) * | 2013-12-11 | 2015-06-17 | 重庆爱特光电有限公司 | Laser emitting circuit, laser receiving circuit, distance calculating circuit and equipment thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111670378A (en) * | 2019-01-09 | 2020-09-15 | 深圳市大疆创新科技有限公司 | Light emitting device, distance measuring device and mobile platform |
| CN110798190A (en) * | 2019-10-08 | 2020-02-14 | 南京航空航天大学 | Electromagnetic interference prevention electronic switch system |
| CN110798190B (en) * | 2019-10-08 | 2021-07-20 | 南京航空航天大学 | Electromagnetic interference prevention electronic switch system |
| CN112510479A (en) * | 2020-12-02 | 2021-03-16 | 南昌攀藤科技有限公司 | Laser device |
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|---|---|
| CN106340800B (en) | 2019-03-12 |
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