CN106340461B - A kind of processing method and structure of ultra-thin centreless package substrate - Google Patents
A kind of processing method and structure of ultra-thin centreless package substrate Download PDFInfo
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- CN106340461B CN106340461B CN201610864315.XA CN201610864315A CN106340461B CN 106340461 B CN106340461 B CN 106340461B CN 201610864315 A CN201610864315 A CN 201610864315A CN 106340461 B CN106340461 B CN 106340461B
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Abstract
A kind of processing method of ultra-thin centreless package substrate, it include: offer laminate structure, laminate structure includes intermediate central dielectric layer, it outward successively include complex copper layers of foil from central dielectric layer, insulating layer and outer copper foil layer, complex copper layers of foil include support substrate layer and separable extra thin copper foil layer；Via hole is made, first line layer is made on outer layer copper foil layer；Welding resistance and surface coating processing are carried out to first line layer；Complex copper layers of foil is separated, ultra-thin centreless package substrate is obtained；Bond support plate；The second line layer is made on extra thin copper foil layer, the second line layer is electrically connected with first line layer by via hole；Welding resistance and surface coating processing are carried out to the second line layer.The embodiment of the present invention also provides corresponding ultra-thin centreless package substrate construction.Protection and booster action of the technical solution of the present invention using support plate help to solve to be easily deformed the problems such as product caused by warpage is lost because ultra-thin centreless package substrate intensity is insufficient in the prior art.
Description
This application claims in submission on July 22nd, 2016 Patent Office of the People's Republic of China, application No. is 201610583868.8, invention names
The referred to as priority of the Chinese patent application of " a kind of processing method and structure of ultra-thin centreless package substrate ", entire contents are logical
Reference is crossed to be incorporated in the present application.
Technical field
The present invention relates to package substrate technical fields, and in particular to a kind of processing method and knot of ultra-thin centreless package substrate
Structure.
Background technique
The slimming of electronic product has expedited the emergence of centreless package substrate, it is but also electrical not only than there is core package substrate thinner
Performance is more superior.Different from there is core package substrate, centreless package substrate does not include the intermediate core plate to play a supportive role, only
High-density wiring is realized by increasing layer technique using insulating layer and copper foil layer.
Centreless package substrate thin plate mainly passes through coreless substrate technique and is processed at present, and process generally comprises:
S1, production loading plate, the surface layer of loading plate are complex copper layers of foil, and complex copper layers of foil includes two layers of separable knot
Structure is support substrate layer and extra thin copper foil layer respectively；
S2, two or more layers line layer is made by increasing layer technique on the surface of the extra thin copper foil layer of loading plate, then will
Two layers of separable structure separation that complex copper layers of foil includes, obtains including extra thin copper foil layer, two or more layers line layer
Ultra thin substrate structure；
S3, the working processes such as subsequent etching, welding resistance and surface coating are carried out to the ultra thin substrate structure, finally obtain nothing
Core package substrate finished product.
Practice discovery, existing coreless substrate technique are primarily present following defect:
Ultra thin substrate structure obtained after separation is ultra thin plate and supports without core plate, causes intensity insufficient, is easily deformed
Therefore warpage is easy to generate in the production of subsequent welding resistance, surface coating technology and lose in batches, influence product yield；And
It is lost in package substrate manufacturing process and subsequent encapsulation procedure.
Summary of the invention
The embodiment of the present invention provide a kind of ultra-thin centreless package substrate processing method and ultra-thin centreless package substrate construction,
To help to solve to be easily deformed product caused by warpage because ultra-thin centreless package substrate intensity is insufficient in the prior art and lose
Problem.
First aspect present invention provides a kind of processing method of ultra-thin centreless package substrate, comprising: provides intermediate symmetry
Laminate structure, the laminate structure include being located in the middle central dielectric layer, successively include outward from the central dielectric layer
Complex copper layers of foil, insulating layer and outer copper foil layer, the complex copper layers of foil include the branch support group contacted with the central dielectric layer
Bottom and extra thin copper foil layer being contacted with the insulating layer, being separated with the support substrate layer；Via hole is made, and
First line layer is made on the outer copper foil layer, the first line layer and the extra thin copper foil layer pass through the via hole
Electrical connection；Welding resistance and surface coating processing are carried out to the first line layer；By the extra thin copper foil layer and the support substrate
Layer separation, obtains ultra-thin centreless package substrate, the ultra-thin centreless package substrate includes the extra thin copper foil layer, the insulating layer
With the first line layer；Support plate is bonded on the ultra-thin centreless package substrate, the support plate is located at the First Line
One side where the floor of road；The second line layer, second line layer and the first line are made on the extra thin copper foil layer
Layer is electrically connected by the via hole；Welding resistance and surface coating processing are carried out to second line layer.
Second aspect of the present invention provides a kind of ultra-thin centreless package substrate construction, comprising: ultra-thin centreless package substrate, and it is viscous
Tie the support plate on the ultra-thin centreless package substrate；The centreless package substrate includes insulating layer and is arranged in the insulation
The first line layer and the second line layer on layer two sides, second line layer are electrically connected with the first line layer by via hole
It connects；The support plate is located at the one side where the first line layer.
Therefore in some feasible embodiments of the present invention, after the separation of complex copper layers of foil, in obtained ultra-thin nothing
Support plate is bonded on core package substrate, using the supporting role of support plate, improves the intensity of ultra-thin centreless package substrate, it can be with
Avoid substrate deformation warpage.In this way, welding resistance and surface coating and package substrate manufacture and subsequent envelope in subsequent microetch
Fill processing procedure in, can to avoid or reduce because substrate it is excessively thin, intensity is too low, be easily deformed plate caused by the reasons such as warpage folding
The problems such as damage, yield reduces.
To sum up, method provided in an embodiment of the present invention, protection and booster action using support plate, helps to solve existing
Because ultra-thin centreless package substrate intensity is insufficient in technology, it is easily deformed the problems such as product caused by warpage is lost.The present invention is implemented
The ultra-thin centreless package substrate construction that example provides has the advantages that easy to process, also has due to protecting and reinforcing with support plate
It is readily transported, stores.
Detailed description of the invention
Technical solution in order to illustrate the embodiments of the present invention more clearly, below will be to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow diagram of the processing method of ultra-thin centreless package substrate provided in an embodiment of the present invention；
Fig. 2 a-2i is the schematic diagram that present invention method processes ultra-thin centreless package substrate each stage；
Fig. 2 j is the schematic diagram of ultra-thin centreless package substrate construction provided in an embodiment of the present invention.
Specific embodiment
The embodiment of the present invention provides a kind of processing method of ultra-thin centreless package substrate, facilitate solve in the prior art because
Ultra-thin centreless package substrate intensity is insufficient, is easily deformed the problems such as product caused by warpage is lost.The embodiment of the present invention also provides
Corresponding ultra-thin centreless package substrate construction.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
Below by specific embodiment, it is described in detail respectively.
Embodiment one,
Referring to FIG. 1, the embodiment of the present invention provides a kind of processing method of ultra-thin centreless package substrate, apply in encapsulation base
Plate field, including but not limited to memory module, the integrated antenna packages such as MEMS field.Present invention method helps
In the working ability for improving centreless packaging substrate product, it can be used for solving the centreless packaging substrate product of 100 μ m thicks or more
Processing, it is particularly possible to for the processing of 100 μm of centreless packaging substrate products below, facilitate reduction product and lose, improve and produce
Product yield, meets the needs of mass production.
Referring to FIG. 1, present invention method can include:
101, the laminate structure of intermediate symmetry is provided, the laminate structure includes being located in the middle central dielectric layer, from institute
State central dielectric layer outward successively include complex copper layers of foil, insulating layer and outer copper foil layer, the complex copper layers of foil include with
The support substrate layer of central dielectric layer contact and contacted with the insulating layer, can be separated with the support substrate layer
Extra thin copper foil layer.
Fig. 2 a is please referred to, prepreg (PP piece) can be used in the present embodiment and copper foil is pressed, makes lamination knot
Structure.The laminate structure centered on central dielectric layer 21 be in intermediate symmetry structure, by outside to inside successively can include: outer layer copper
Layers of foil 24, insulating layer 23, complex copper layers of foil 22, central dielectric layer 21.
Wherein, central dielectric layer 21 and insulating layer 23 can use prepreg, and optionally, central dielectric layer can also be with
Using glass-fiber-plate.Optionally, insulating layer 23 can be no more than 30 μm of prepreg using thickness.Optionally, outer copper foil layer
24 can use the copper foil layer of about 1/3 ounce of thickness (Oz), or be no more than 15 μm or 10 μm of copper foil layer using thickness.
Wherein, complex copper layers of foil 22 includes two layers of separable structure, i.e. support substrate layer 2201 and extra thin copper foil layer
2202.Wherein, support substrate layer 2201 is contacted with central dielectric layer 21, and extra thin copper foil layer 2202 is contacted with insulating layer 23.It is subsequent
Support substrate layer 2201 and extra thin copper foil layer 2202 can be separated as needed.Optionally, the extra thin copper foil layer 2202 can be with
It is that thickness is no more than 10 μm or even the copper foil layer no more than 5 μm.
102, via hole is made.
The via hole of interlayer conduction is made in this step, it as shown in Figure 2 b, can be in one where outer layer copper foil layer 24
Side, inner layer make via hole 25, outer copper foil layer 24 and extra thin copper foil layer 2202 are electrically connected by via hole 25.
In some embodiments, via hole 25 can be made using laser drill and hole metallization technique, specifically can wrap
It includes: being processed using laser drilling process from the design position of 24 one side of outer copper foil layer arrive at the extra thin copper foil layer first
2202 blind hole, wherein first can be etched windowing in the design position, carry out laser drilling again after manifesting insulating layer 23
Hole directly can also carry out laser drill in design position.Then, very thin sink is formed in the hole wall of blind hole using heavy process for copper
Basis of the layers of copper as plating；Finally, carrying out filling perforation plating to blind hole, via hole 25 is made；Wherein, it can be adopted when filling perforation is electroplated
With electric plating of whole board technique, graphic plating technique can also be used.Optionally, the via hole 25 made in this step can be one
It is a, it is also possible to multiple.
103, first line layer is made on outer layer copper foil layer, first line layer is electrically connected with extra thin copper foil layer by via hole
It connects.
Etch process processing line layer is used in this step, it as shown in Figure 2 c, can be using etch process in outer copper foil
Etching and processing is carried out on layer 24, production forms first line layer 26, and specific process may include: pad pasting-exposure-development-
Etching-striping；Wherein,
Pad pasting is to stick etchant resist, such as dry film against corrosion on the surface of outer layer copper foil layer 24；
Exposure, be the line pattern on film or other transparent materials is transferred to using the ultraviolet light of exposure machine transmitting it is anti-
It loses on film；
Development is handled using developer solution, the etchant resist that photopolymerization reaction does not occur is removed, remaining etchant resist is outside
24 surface of layer copper foil layer defines line pattern；
Etching is to not being etched removal by the outer copper foil layer 24 that mould against corrosion is protected；
Striping is to remove etchant resist with chemical solution.
Through above-mentioned steps, the part that outer copper foil layer 24 is not etched removal forms first line layer 26.
Optionally, the height of first line figure 26 is between 10 μm -15 μm；Optionally, first line figure 26 can
To be that line width is no more than 15 μm and fine-line of the line spacing no more than 15 μm.
104, welding resistance and surface coating processing are carried out to first line layer.
As shown in Figure 2 d, welding resistance processing and surface coating processing can be carried out to first line figure 26 in this step；Wherein,
Welding resistance processing is that a such as green oil of solder mask 27 is arranged above first line figure 26, to first line figure 26 and insulation
Layer 23 is protected；Surface coating processing is in the positions such as the part that is exposed outside of needs of such as first line figure 26, shape
At a kind of film layer, to improve surface property, such as hard golden or soft gold is electroplated in bond pad surface and forms Gold plated Layer, or plating plating formation
Plate palladium layers.
105, extra thin copper foil layer is separated with support substrate layer, obtains ultra-thin centreless package substrate.
In this step, composite copper foil layer interlaminar separation is carried out, that is, by the extra thin copper foil layer and the support substrate layer point
From obtaining ultra-thin centreless package substrate 30 as shown in Figure 2 e, ultra-thin centreless package substrate 30 or semi-finished product here.Such as figure
Shown in 2e, the ultra-thin centreless package substrate 30 of semi-finished product includes the extra thin copper foil layer 2202, the insulating layer 23 and institute
State first line layer 26；It can also include: the via hole 25 for connecting the first line layer 26 and the extra thin copper foil layer 2202.
Next, microetch is needed to remove the extra thin copper foil layer 2202, first line layer 26 is manifested, and to first line
After layer 26 carries out welding resistance and surface coating processing, the ultra-thin centreless package substrate 30 of finished product can be just obtained.But due to ultra-thin centreless
The thickness of package substrate 30 is excessively thin for example no more than 100 μm, and supports without core plate, causes to be easy buckling deformation, subsequent
In the processing steps such as microetch, welding resistance and surface coating and the processes such as subsequent encapsulation or even transport are very easy to lose or even lead
Cause subsequent technique that can not carry out.
106, support plate is bonded on ultra-thin centreless package substrate, support plate is located at the one side where first line layer.
To solve the above problems, being reinforced using support plate 40 ultra-thin centreless package substrate 30 in the embodiment of the present invention
And protection.Then, in this step, as shown in Fig. 2 f and 2g, support plate 40, institute can be bonded on ultra-thin centreless package substrate 30
The one side that support plate 40 is located at where the first line layer 26 is stated, this one side is known as ultra-thin centreless herein for ease of description
The back of package substrate 30；That is, support plate 40 is bonded in the back of ultra-thin centreless package substrate 30, to realize that back adds
Strong and protection.
During specific implementation, ultra-thin centreless package substrate 30 is separated into two parts first, using after overturning can be ultra-thin
Binder 50 is arranged in the edge secondary graphics region 31 of 30 product of centreless package substrate, in other words, using binder 50 by edge
Secondary graphics region 31 seals, and is then accepted using support plate 40, is encapsulated using the binder in the ultra-thin centreless
Support plate 40 is bonded on substrate 30, the two bonding is integrated, the bonding position of the two is in the edge secondary graphics region of surrounding
31。
Optionally, the thickness of binder 50 used is at 5-15 μm；Optionally, binder seals the edge of substrate back completely
Secondary graphics region 31；Optionally, the operating process for bonding support plate 40 carries out under conditions of high temperature and pressure vacuumizes, wherein
The hot conditions that temperature is 200 degree or less such as 100 to 200 degree can be used, to guarantee bottom support plate 40 and ultra-thin centreless
Package substrate 30 is bonded closely, bubble-free.
Wherein, binder bonded areas will not be used in encapsulation process, can be gone when product is cut into single
It removes.Optionally, the support plate is copper-clad plate, steel plate or copper sheet or other intensity, rigidity and the coefficient of expansion and printed circuit board
(PCB) matched flaky material；That is, either conductor or insulator, as long as the coefficient of expansion and intensity are enough, route
Plate supports the flaky material that can be processed, and can be considered for as support plate.Optionally, the binder is epoxy resin
Or the adhesive based on polyimides.
107, the second line layer is made on extra thin copper foil layer, the second line layer is electrically connected with first line layer by via hole
It connects.
Outer graphics processing is carried out using etch process in this step, it as shown in fig. 2h, can be using etch process super
Etching and processing is carried out on thin copper foil layer 2202, production forms the second line layer 28, and specific process may include: pad pasting-exposure
Light-development-etching-striping；Wherein,
Pad pasting is to stick etchant resist, such as dry film against corrosion on the surface of extra thin copper foil layer 2202；
Exposure, be the line pattern on film or other transparent materials is transferred to using the ultraviolet light of exposure machine transmitting it is anti-
It loses on film；
Development is handled using developer solution, the etchant resist that photopolymerization reaction does not occur is removed, remaining etchant resist is super
2202 surface of thin copper foil layer defines line pattern；
Etching is to not being etched removal by the extra thin copper foil layer 2202 that mould against corrosion is protected；
Striping is to remove etchant resist with chemical solution.
Through above-mentioned steps, the part that extra thin copper foil layer 2202 is not etched removal forms the second line layer 28.
Optionally, the height of the second line layer 28 is between 10 μm -15 μm；Optionally, the second line layer 28 can be
Line width is no more than 15 μm and fine-line of the line spacing no more than 15 μm.
This step, due to being processed with support plate, entire plate has enough intensity and thickness, will not become easily
Shape or warpage can avoid or reduce plate and lose, and improve yield.
108, welding resistance and surface coating processing are carried out to the second line layer.
In this step, as shown in fig. 2i, welding resistance processing and surface coating processing can be carried out to the second line layer 28；Wherein,
Welding resistance processing is that a such as green oil of solder mask 27 is arranged above the second line layer 28, to the second line layer 28 and insulating layer 23
It is protected；Surface coating processing is to form one kind in positions such as the parts that is exposed outside of needs of such as the second line layer 28
Film layer to improve surface property, such as is electroplated hard golden or soft gold in bond pad surface and forms Gold plated Layer, or plating plating formation plating palladium
Layer.This step, due to being processed with support plate, entire plate has enough intensity and thickness, will not deform easily or
Warpage can avoid or reduce plate and lose, and improve yield.
Through above-mentioned steps, the processing of ultra-thin centreless package substrate is basically completed.From have unlike core package substrate, have
The center of core package substrate has core plate such as glass-fiber-plate to support, and the center of ultra-thin centreless package substrate only has very thin insulating layer
Such as prepreg.
During actual processing, layout technique is generallyd use, that is, multiple small envelopes of permutation and combination on a big substrate
Fill substrate, for this purpose, optionally, present invention method can with the following steps are included:
In the edge secondary graphics region of ultra-thin centreless package substrate, process through ultra-thin centreless package substrate and support
One or more location holes of plate.
As shown in figure 2j, in this step, it can be drilled in bonding region, that is, edge secondary graphics region and use milling machine
It is processed into specified shape, forms location hole 60, for use in the processing of encapsulation factory, which is usually through described ultra-thin
The location hole of centreless package substrate and the support plate, it is generally multiple.
It is subsequent layout structure to be cut based on location hole 60, obtain the ultra-thin centreless package substrate of single finished product
30, wherein support plate 40 can voluntarily can fall off removal when product is cut into single finished product.
More than, in conjunction with attached drawing for processing dual platen, present invention method is illustrated.This method both may be used
It for processing dual platen, that is, include the ultra-thin centreless package substrate of two layers of line layer；It can also be used for processing multi-layer board, that is, include more
The ultra-thin centreless package substrate of sandwich circuit layer；This method can both guarantee the intensity of product in process, and it is good to improve processing
Rate reduces product and loses, and can realize the function of product.
For processing dual platen, present invention method can be used for processing thickness in 100 μm of ultra-thin centreless below
Packaging substrate product, such as thickness is in 80 μm of ultra-thin centreless packaging substrate products below.Optionally, described herein ultra-thin
Centreless package substrate can be thickness no more than 100 μm or the centreless package substrate no more than 80 μm.And use traditional add
Work method, thickness is at 100 μm or so or centreless package substrate below is due to too thin, and intensity is too low, and deformation warpage is serious, thus
It can not process, conventional method can only process the centreless package substrate of several hundred micron thickness, and cannot be guaranteed to lose level, and yield is very
It is low.
Therefore in some feasible embodiments of the present invention, after the separation of complex copper layers of foil, in obtained ultra-thin nothing
Support plate is bonded on core package substrate, provides a kind of new ultra-thin centreless package substrate construction with support plate.Utilize support
The supporting role of plate improves the intensity of ultra-thin centreless package substrate, can be to avoid substrate deformation warpage.In this way, subsequent
Microetch, during the processing such as welding resistance and surface coating, and in package substrate manufacturing process and in subsequent encapsulation procedure, by
In the protection and reinforcement of support plate, can to avoid or reduce because substrate is excessively thin, intensity is too low, is easily deformed the reasons such as warpage and leads
The problems such as plate of cause is lost, and yield reduces.
To sum up, method provided in an embodiment of the present invention, protection and booster action using support plate, helps to solve existing
Because ultra-thin centreless package substrate intensity is insufficient in technology, it is easily deformed the problems such as product caused by warpage is lost.The present invention is implemented
The ultra-thin centreless package substrate construction that example provides has the advantages that easy to process, also has due to protecting and reinforcing with support plate
It is readily transported, stores.
Embodiment two,
Fig. 2 j is please referred to, the embodiment of the present invention two also provides a kind of ultra-thin centreless package substrate construction, the present invention can be used
The method of embodiment one is process.
Such as Fig. 2 j, ultra-thin centreless package substrate construction can include:
Ultra-thin centreless package substrate 30, and the support plate 40 being bonded on the ultra-thin centreless package substrate；
The centreless package substrate 30 include insulating layer 23 and be arranged in the insulating layer two sides first line layer 26 and
Second line layer 28, second line layer 28 are electrically connected with the first line layer 26 by via hole 25；The support plate
40 are located at the one side where the first line layer 26.
Optionally, the support plate is that copper-clad plate, steel plate or copper sheet or other intensity and the coefficient of expansion and ultra-thin centreless seal
Fill the matched material of substrate 30.
Optionally, ultra-thin centreless package substrate 30 and the support plate 40 are bonded by binder, and the binder is ring
Adhesive based on oxygen resin or polyimides.
Optionally, the thickness of the ultra-thin centreless package substrate is no more than 100 microns or no more than 80 microns.
Optionally, the thickness of the first line layer 26 is not more than 15 microns, and the thickness of second line layer 28 is little
In 15 microns, the thickness of the insulating layer 23 is not more than 25 or 30 microns.
More than, ultra-thin centreless package substrate construction provided in an embodiment of the present invention is described, about ultra-thin centreless
The more detailed description of package substrate construction can be with the description in reference implementation example one.
Therefore in some feasible embodiments of the present invention, a kind of new ultra-thin centreless with support plate is provided
Package substrate construction.Using the supporting role of support plate, the intensity of ultra-thin centreless package substrate is improved, can be become to avoid substrate
Shape warpage.In this way, carrying out microetch, welding resistance and surface coating etc. be during processing, and in package substrate manufacturing process and
In subsequent encapsulation procedure, due to the protection and reinforcement of support plate, can to avoid or reduce because substrate is excessively thin, intensity is too low,
Plate caused by the reasons such as warpage is easily deformed to lose, yield reduce the problems such as.To sum up, ultra-thin nothing provided in an embodiment of the present invention
Core package substrate construction has intensity high, is unlikely to deform warpage, easy to process is excellent due to protecting and reinforcing with support plate
Point also has many advantages, such as to be readily transported, store.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, is not described in some embodiment
Part, may refer to the associated description of other embodiments.
It should be noted that for the various method embodiments described above, for simple description, therefore, it is stated as a series of
Combination of actions, but those skilled in the art should understand that, the present invention is not limited by described sequence of movement because according to
According to the present invention, certain steps can use other sequences or carry out simultaneously.Secondly, those skilled in the art should also know that,
The embodiments described in the specification are all preferred embodiments, and not necessarily the present invention must for related actions and modules
Must.
The processing method and structure for being provided for the embodiments of the invention a kind of ultra-thin centreless package substrate above carry out
It is discussed in detail, but the above description of the embodiment is only used to help understand the method for the present invention and its core ideas, should not be understood
For limitation of the present invention.Those skilled in the art, according to the thought of the present invention, the invention discloses technical scope
Interior, any changes or substitutions that can be easily thought of, should be covered by the protection scope of the present invention.
Claims (7)
1. a kind of processing method of ultra-thin centreless package substrate characterized by comprising
The laminate structure of intermediate symmetry is provided, the laminate structure includes being located in the middle central dielectric layer, is situated between from the center
Matter layer successively includes complex copper layers of foil, insulating layer and outer copper foil layer outward, and the complex copper layers of foil includes and the center
The support substrate layer of dielectric layer contact and extra thin copper foil being contacted with the insulating layer, being separated with the support substrate layer
Layer；
Make via hole, and on the outer copper foil layer make first line layer, the first line layer with it is described ultra-thin
Copper foil layer is electrically connected by the via hole；
Welding resistance and surface coating processing are carried out to the first line layer；
The extra thin copper foil layer is separated with the support substrate layer, obtains ultra-thin centreless package substrate, the ultra-thin centreless envelope
Filling substrate includes the extra thin copper foil layer, the insulating layer and the first line layer；
Support plate is bonded on the ultra-thin centreless package substrate, the support plate is located at one where the first line layer
Face；
The second line layer is made on the extra thin copper foil layer, second line layer is led with the first line layer by described
Through-hole electrical connection；
Welding resistance and surface coating processing are carried out to second line layer；
Wherein, the ultra-thin centreless package substrate is the centreless package substrate that thickness is no more than 100 microns, the extra thin copper foil layer
It is the copper foil layer that thickness is no more than 10 microns.
2. the method according to claim 1, wherein described bond support on the ultra-thin centreless package substrate
Plate includes:
Binder is set in the edge secondary graphics region of the ultra-thin centreless package substrate, using the binder described super
Support plate is bonded on thin centreless package substrate.
3. the method according to claim 1, wherein the method also includes:
In the edge secondary graphics region of the ultra-thin centreless package substrate, process through the ultra-thin centreless package substrate and
The location hole of the support plate.
4. the method according to claim 1, wherein
The support plate is copper-clad plate, steel plate or copper sheet.
5. according to the method described in claim 2, it is characterized in that,
The binder is the adhesive based on epoxy resin or polyimides.
6. a kind of ultra-thin centreless package substrate construction characterized by comprising
Ultra-thin centreless package substrate, and the support plate being bonded on the ultra-thin centreless package substrate；
The centreless package substrate includes insulating layer and the first line layer and the second line layer that the insulating layer two sides is arranged in,
Second line layer is electrically connected with the first line layer by via hole；
The support plate is located at the one side where the first line layer；
Wherein, the ultra-thin centreless package substrate is the centreless package substrate that thickness is no more than 100 microns.
7. ultra-thin centreless package substrate construction according to claim 6, it is characterised in that:
The support plate is copper-clad plate, steel plate or copper sheet.
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| CN107089641B (en) * | 2017-03-07 | 2019-05-21 | 深南电路股份有限公司 | A kind of production method and Related product of ultra-thin packed substrate |
| CN108269766A (en) * | 2017-12-20 | 2018-07-10 | 深南电路股份有限公司 | A kind of ultra-thin packed substrate structure and its processing method |
| US10622292B2 (en) * | 2018-07-06 | 2020-04-14 | Qualcomm Incorporated | High density interconnects in an embedded trace substrate (ETS) comprising a core layer |
| CN113194635B (en) * | 2021-03-15 | 2023-05-26 | 江西宇睿电子科技有限公司 | Impedance line manufacturing method, impedance line and circuit board |
| CN114464720A (en) * | 2022-01-27 | 2022-05-10 | 广东芯华微电子技术有限公司 | LED substrate structure, preparation method thereof and micro LED packaging structure |
| CN114464721A (en) * | 2022-01-27 | 2022-05-10 | 广东芯华微电子技术有限公司 | LED substrate structure, preparation method thereof and micro LED packaging structure |
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