CN106330153B - A kind of driving circuit of metal-oxide-semiconductor - Google Patents
A kind of driving circuit of metal-oxide-semiconductor Download PDFInfo
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- CN106330153B CN106330153B CN201610796333.9A CN201610796333A CN106330153B CN 106330153 B CN106330153 B CN 106330153B CN 201610796333 A CN201610796333 A CN 201610796333A CN 106330153 B CN106330153 B CN 106330153B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The embodiment of the present invention provides a kind of driving circuit of metal-oxide-semiconductor.The driving circuit of metal-oxide-semiconductor provided in an embodiment of the present invention, for being driven to main metal-oxide-semiconductor, including signal input part, the first branch and second branch, the first branch is in parallel with the second branch, and be connected between the signal input part and the main metal-oxide-semiconductor, the first branch is also connected with a power supply.By the way that the potential-divider network of the first branch and second branch is arranged, realizes the effective control of driving, improve driving capability, solve the problems, such as high-voltage MOS pipe it is intrinsic because the presence of Miller capacitance leads to driving.Because improving driving capability, so reducing the loss of main metal-oxide-semiconductor, improving efficiency.Meanwhile also because the intrinsic charge and discharge electrical time constant of the first and second branch potential-divider network capacitor exists, avoids P cast metal-oxide-semiconductor and N-type metal-oxide-semiconductor is straight-through, greatly improve driving reliability.
Description
Technical field
The present invention relates to switching circuit actuation techniques fields, in particular to a kind of driving circuit of metal-oxide-semiconductor.
Background technique
With according to current Metal-oxide-semicondutor field-effect tube (metal-oxide-semiconductor field
Effect transistor, MOSFET) drive scheme, especially high pressure applications are driving larger Miller capacitance
When metal-oxide-semiconductor, it is easy to happen driving and falls (burr occurs in driving signal), the phenomenon that the driving to metal-oxide-semiconductor is insufficient.Therefore must increase
Add auxiliary source or amplifier to provide powerful level signal, but increase volume and cost in this way, is also easy to cause to drive
Delay, leads to power loss.
Summary of the invention
In view of this, a kind of driving circuit for being designed to provide metal-oxide-semiconductor of the embodiment of the present invention, to improve the prior art
The problem insufficient to the driving of the metal-oxide-semiconductor of larger Miller capacitance.
A kind of driving circuit of metal-oxide-semiconductor provided in an embodiment of the present invention, including signal input part, the first branch and second
Road, the first branch is in parallel with the second branch, and is connected between the signal input part and the main metal-oxide-semiconductor, institute
Signal input part is stated for input pulse signal, the first branch controls institute for dividing to the pulse signal
Main metal-oxide-semiconductor conducting is stated, the first branch is also connected with a power supply, and the second branch is for dividing the pulse signal
Pressure, and control the main metal-oxide-semiconductor shutdown.
Preferably, the first branch includes p-type metal-oxide-semiconductor, first capacitor, first capacitor group, first resistor, second resistance
And first diode, the source electrode of the p-type metal-oxide-semiconductor are connect with the power supply, the drain electrode of the p-type metal-oxide-semiconductor and the main MOS
The grid of pipe connects, and the grid of the p-type metal-oxide-semiconductor is connect with the signal input part, and the first resistor is set to the p-type
Between the grid of metal-oxide-semiconductor and the signal input part, the first capacitor is parallel to the first resistor both ends, and the described 1st
The anode of pole pipe is connected between the source electrode and the power supply of the p-type metal-oxide-semiconductor, the cathode of the first diode and described the
One end of two resistance connects, the other end of the second resistance be connected to the first resistor and the p-type metal-oxide-semiconductor grid it
Between, one end of the first capacitor group is connected between the first capacitor and the first resistor, the first capacitor group
The other end is connected between the cathode of the first diode and the second resistance.
Preferably, the first capacitor group includes the second capacitor and third capacitor, and second capacitor and the third are electric
Hold in parallel.
Preferably, the second branch includes N-type metal-oxide-semiconductor, the 4th capacitor, the second capacitance group, 3rd resistor, the 4th resistance
And second diode, the source electrode ground connection of the N-type metal-oxide-semiconductor, the drain electrode of the N-type metal-oxide-semiconductor connect with the grid of the main metal-oxide-semiconductor
It connects, the grid of the N-type metal-oxide-semiconductor is connect with the signal input part, and the 3rd resistor is set to the grid of the N-type metal-oxide-semiconductor
Between pole and the signal input part, the 4th capacitor is parallel to the 3rd resistor both ends, and second diode is born
Pole is connect with the source electrode of the N-type metal-oxide-semiconductor, and the anode of second diode is connect with one end of the 4th resistance, described
The other end of 4th resistance is connected between the 3rd resistor and the grid of the N-type metal-oxide-semiconductor, and the one of second capacitance group
End is connected between the 4th capacitor and the 3rd resistor, and the other end of second capacitance group is connected to the described 2nd 2
Pole pipe it is positive between the 4th resistance.
Preferably, second capacitance group includes the 5th capacitor and the 6th capacitor, the 5th capacitor and the 6th electricity
Hold in parallel.
It preferably, further include isolating chip, one end of the isolating chip is connected to the first branch and described second
Between branch, the other end of the isolating chip is connect with the signal input part.
Preferably, the isolating chip includes input pin, output pin and voltage input pin, the input pin
It is connect with the signal input part, the output pin is connected between the first branch and the second branch, the electricity
Pressure input pin is connected to the power supply.
Preferably, further include the 5th resistance and the 7th capacitor, the 5th resistance be set to the voltage input pin with
Between the power supply, one end of the 7th capacitor is connected between the voltage input pin and the 5th resistance, described
The other end of 7th capacitor is grounded.
It preferably, further include third capacitance group, third capacitance group one end is connect with the power supply, the third capacitor
The other end ground connection of group, the third capacitance group are used to stablize the output voltage of the power supply.
Preferably, the third capacitance group includes the 8th capacitor and the 9th capacitor, the 8th capacitor and the 9th electricity
Hold in parallel.
Compared with prior art, the driving circuit of the metal-oxide-semiconductor of offer of the invention passes through the first branch and second branch pair
The pulse signal of signal input part input carries out decomposition utilization.When input pulse signal is low level, in conjunction with the p-type MOS
The turn-on condition of pipe, the first branch divide power supply by first diode, and p-type metal-oxide-semiconductor grid obtains reasonably
It is connected the p-type metal-oxide-semiconductor after voltage, then makes the main metal-oxide-semiconductor open-minded；Meanwhile the low level pulse signal of input is to
Two branches are without influence.That is, low level cannot be such that the N-type metal-oxide-semiconductor of second branch is connected.When input pulse signal is high level,
In conjunction with the turn-on condition of the p-type metal-oxide-semiconductor, the grid voltage of p-type metal-oxide-semiconductor can be superimposed one on the basis of partial pressure before at this time
High level finally makes its grid voltage be higher than supply voltage and turn off p-type metal-oxide-semiconductor.Meanwhile the high level pulse signal of input
A reasonable grid voltage is obtained after dividing by second branch is connected the N-type metal-oxide-semiconductor, then makes the main metal-oxide-semiconductor
Shutdown.Just so as to circulate back and forth turning on and off the main metal-oxide-semiconductor after stable state.Pass through point of the setting first branch and second branch
Pressure network network realizes the effective control of driving, improves driving capability, solves intrinsic the depositing because of Miller capacitance of high-voltage MOS pipe
The problem of leading to driving.Because improving driving capability, so reducing the loss of main metal-oxide-semiconductor, improving efficiency.Meanwhile also because of the
One, the intrinsic charge and discharge electrical time constant of two branch potential-divider network capacitors exists, and avoids P cast metal-oxide-semiconductor and N-type metal-oxide-semiconductor is straight-through,
Greatly improve driving reliability.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the driving circuit structure schematic diagram for the metal-oxide-semiconductor that present pre-ferred embodiments provide.
Main element symbol description
Signal input part 100；Power supply 200；Isolation circuit 300；Isolating chip U1；Input pin P2；Output pin P6；Electricity
Press input pin P8；Main metal-oxide-semiconductor Q1；P-type metal-oxide-semiconductor Q2；N-type metal-oxide-semiconductor Q3；First diode D1；Second diode D2.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
Referring to FIG. 1, being the driving circuit structure schematic diagram for the metal-oxide-semiconductor that present pre-ferred embodiments provide.Of the invention
The driving circuit of metal-oxide-semiconductor controls the on or off of main metal-oxide-semiconductor Q1, the main metal-oxide-semiconductor for driving to main metal-oxide-semiconductor Q1
Q1 can be the metal-oxide-semiconductor with larger Miller capacitance, and Miller capacitance (Miller Capacitance) is exactly to be connected across amplifier
Capacitor Miller capacitance between the output end and input terminal of (the device perhaps circuit of amplification work) is for device or circuit
The influence of frequency characteristic is known as Miller effect.
The driving circuit of the metal-oxide-semiconductor include signal input part 100, isolation circuit 300, the first branch, second branch with
And power supply 200, the first branch is in parallel with the second branch, and is connected to the signal input part 100 and main MOS
Between pipe Q1, the signal input part 100 is connect by isolation circuit 300 with the first branch and second branch, the electricity
Source 200 is connect with the second branch and isolation circuit 300 respectively.
The isolation circuit 300 includes isolating chip U1, the 5th resistance R5 and the 7th capacitor C7, the isolating chip U1 packet
It includes input pin P2, output pin P6 and voltage input pin P8, the input pin P2 and the signal input part 100 connects
It connects, the output pin P6 is connected between the first branch and the second branch, the voltage input pin P8 connection
In the power supply 200, the 5th resistance R5 is set between the voltage input pin P8 and the power supply 200, and described
One end of seven capacitor C7 is connected between the voltage input pin P8 and the 5th resistance R5, and the 7th capacitor C7's is another
One end ground connection.The isolation circuit 300 is used to carry out noise isolation to signal.The signal input part 100 is used for input pulse
Signal, after the input pin P2 and the output pin P6, pulse signal after isolation can enter the first branch and
The second branch.The isolating chip further includes pin P1 and pin P2, and pin P1 is connected with pin P2.Isolating chip also wraps
Three ground pins P4, P5, P7 are included, three ground pins P4, P5, P7 are grounded.
The first branch controls the main metal-oxide-semiconductor Q1 conducting for dividing to the pulse signal.Specifically
, the first branch include p-type metal-oxide-semiconductor Q2, first capacitor C1, first capacitor C1 group, first resistor R1, second resistance R2 with
And first diode D1.
The source electrode of the p-type metal-oxide-semiconductor Q2 is connect with the power supply 200, the drain electrode of the p-type metal-oxide-semiconductor Q2 and the main MOS
The grid of pipe Q1 connects, and the grid of the p-type metal-oxide-semiconductor Q2 is connect with the signal input part 100, the first resistor R1 setting
Between the grid and the signal input part 100 of the p-type metal-oxide-semiconductor Q2, the first capacitor C1 is parallel to first electricity
The both ends R1 are hindered, the anode of the first diode D1 is connected between the source electrode and the power supply 200 of the p-type metal-oxide-semiconductor Q2, institute
The cathode for stating first diode D1 is connect with one end of the second resistance R2, and the other end of the second resistance R2 is connected to institute
It states between first resistor R1 and the grid of the p-type metal-oxide-semiconductor Q2, one end of the first capacitor C1 group is connected to first electricity
Hold between the C1 and first resistor R1, the other end of the first capacitor C1 group is connected to the cathode of the first diode D1
Between the second resistance R2.
Wherein, the first capacitor C1 group may include the second capacitor C2 and third capacitor C3, the second capacitor C2 with
The third capacitor C3 is in parallel.
The second branch controls the main metal-oxide-semiconductor Q1 shutdown for dividing to the pulse signal, and described the
Two branches include N-type metal-oxide-semiconductor Q3, the 4th capacitor C4, the second capacitor C2 group, 3rd resistor R3, the 4th resistance R4 and the two or two
Pole pipe D2.
The source electrode of the N-type metal-oxide-semiconductor Q3 is grounded, and the drain electrode of the N-type metal-oxide-semiconductor Q3 connects with the grid of the main metal-oxide-semiconductor Q1
It connects, the grid of the N-type metal-oxide-semiconductor Q3 is connect with the signal input part 100, and the 3rd resistor R3 is set to the N-type MOS
Between the grid of pipe Q3 and the signal input part 100, the 4th capacitor C4 is parallel to the both ends the 3rd resistor R3, described
The cathode of second diode D2 is connect with the source electrode of the N-type metal-oxide-semiconductor Q3, the anode and the described 4th of the second diode D2
One end of resistance R4 connects, and the other end of the 4th resistance R4 is connected to the 3rd resistor R3's and N-type metal-oxide-semiconductor Q3
Between grid, one end of the second capacitor C2 group is connected between the 4th capacitor C4 and the 3rd resistor R3, described
The other end of second capacitor C2 group is connected to the positive between the 4th resistance R4 of the second diode D2.
Wherein, the second capacitor C2 group may include the 5th capacitor C5 and the 6th capacitor C6, the 5th capacitor C5 and described
6th capacitor C6 is in parallel.
The generally rectangular cross-section pulse of pulse signal, for example, it may be rising to 12 volts of rectangular pulse from 0 volt.After isolation
After pulse signal enters the first branch and second branch, since the first branch includes first capacitor C1, the second capacitor C2, the
Three capacitor C3, first resistor R1, second resistance R2 and first diode D1 have the function of partial pressure；Second branch includes the
Four capacitor C4, the 5th capacitor C5, the 6th capacitor C6,3rd resistor R3, the 4th resistance R4 and the second diode D2, it may have point
The effect of pressure.In this way, pulse signal can be modulated, for example, when pulse signal is low, the p-type metal-oxide-semiconductor of the first branch
Q2 conducting, at this point, the N-type metal-oxide-semiconductor Q3 of second branch is turned off, the main MOS conducting；When pulse signal is high, described first
The p-type metal-oxide-semiconductor Q2 on road is turned off, at this point, the N-type metal-oxide-semiconductor Q3 of second branch is connected, the main metal-oxide-semiconductor Q1 shutdown.
By the adjustment to first capacitor C1 to the 6th capacitor C6, is reasonably divided, be equivalent to moving pulse signal
Centered level, so that the driving circuit of the metal-oxide-semiconductor is preferably driven main metal-oxide-semiconductor Q1, for example, by first capacitor C1 to
The adjustment of six capacitor C6, when the input first branch being made to have 0 to 8V to the grid of p-type metal-oxide-semiconductor, the p-type metal-oxide-semiconductor Q2 conducting；Make
When the pulse signal for inputting second branch is 4 to 10 volt, the N-type metal-oxide-semiconductor Q3 conducting.It needs it is to be noted that the pulse is believed
Number voltage value be generally below the output voltage of the power supply 200.In the present embodiment, the output voltage of the power supply 200 is 12
Volt.
The first diode D1 and the second diode D2 be respectively used to the first branch and second branch into
Row charging.
The driving circuit of the metal-oxide-semiconductor further includes third capacitor C3 group, described third capacitor C3 group one end and the power supply
200 connections, the other end ground connection of the third capacitor C3 group, third capacitor C3 group includes the 8th capacitor C8 and the 9th capacitor C9,
The 8th capacitor C8 and the 9th capacitor C9 is in parallel；The 8th capacitor C8 and the 9th capacitor C9 are used to stablize institute
State the output voltage and energy storage energy of power supply 200.
In conclusion the driving circuit of metal-oxide-semiconductor provided in an embodiment of the present invention, for being driven to main metal-oxide-semiconductor, including
Signal input part, the first branch and second branch, the first branch is in parallel with the second branch, and is connected to the signal
Between input terminal and the main metal-oxide-semiconductor, the first branch is also connected with a power supply.By the first branch and second branch to letter
The pulse signal of number input terminal input is decomposed, and a part of pulse signal is made to enter the first branch, another part pulse
Signal enters the second branch, and then the first branch and the second branch control the unlatching of the main metal-oxide-semiconductor respectively
Or shutdown.By the way that the potential-divider network of the first branch and second branch is arranged, realizes the effective control of driving, improve driving energy
Power, solve the problems, such as high-voltage MOS pipe it is intrinsic because the presence of Miller capacitance leads to driving.Because improving driving capability, so
It reduces the loss of main metal-oxide-semiconductor, improve efficiency.Meanwhile also because the first and second branch potential-divider network capacitor intrinsic charge and discharge time is normal
Number exists, and avoids P cast metal-oxide-semiconductor and N-type metal-oxide-semiconductor is straight-through, greatly improve driving reliability.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, or be somebody's turn to do
Invention product using when the orientation or positional relationship usually put, be merely for convenience of description of the present invention and simplification of the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as limitation of the present invention.In addition, term " first ", " second ", " third " etc. are only used for distinguishing description, and cannot manage
Solution is indication or suggestion relative importance.
In addition, the terms such as term "horizontal", "vertical", " pendency " are not offered as requiring component abswolute level or pendency, and
It is that can be slightly tilted.It is not to indicate the structure if "horizontal" only refers to that its direction is more horizontal with respect to for "vertical"
It has to fully horizontally, but can be slightly tilted.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be indirect by intermediary
It is connected, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in the present invention.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.It should also be noted that similar label and letter exist
Similar terms are indicated in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, are then not required in subsequent attached drawing
It is further defined and explained.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. a kind of driving circuit of metal-oxide-semiconductor, for being driven to main metal-oxide-semiconductor, which is characterized in that including signal input part,
One branch and second branch, the first branch include p-type metal-oxide-semiconductor, first capacitor, first capacitor group, first resistor, the second electricity
Resistance and first diode, the source electrode of the p-type metal-oxide-semiconductor connect to power supply, the drain electrode of the p-type metal-oxide-semiconductor and the main metal-oxide-semiconductor
Grid connection, the grid of the p-type metal-oxide-semiconductor connect with the signal input part, and the first resistor is set to the p-type
Between the grid of metal-oxide-semiconductor and the signal input part, the first capacitor is parallel to the first resistor both ends, and the described 1st
The anode of pole pipe is connected between the source electrode and the power supply of the p-type metal-oxide-semiconductor, the cathode of the first diode and described the
One end of two resistance connects, the other end of the second resistance be connected to the first resistor and the p-type metal-oxide-semiconductor grid it
Between, one end of the first capacitor group is connected between the first capacitor and the first resistor, the first capacitor group
The other end is connected between the cathode of the first diode and the second resistance, the second branch include N-type metal-oxide-semiconductor,
4th capacitor, the second capacitance group, 3rd resistor, the 4th resistance and the second diode, the source electrode ground connection of the N-type metal-oxide-semiconductor, institute
The drain electrode for stating N-type metal-oxide-semiconductor is connect with the grid of the main metal-oxide-semiconductor, and the grid and the signal input part of the N-type metal-oxide-semiconductor connect
It connects, the 3rd resistor is set between the grid and the signal input part of the N-type metal-oxide-semiconductor, and the 4th capacitor is in parallel
In the 3rd resistor both ends, the cathode of second diode is connect with the source electrode of the N-type metal-oxide-semiconductor, the two or two pole
Pipe anode connect with one end of the 4th resistance, the other end of the 4th resistance be connected to the 3rd resistor with it is described
Between the grid of N-type metal-oxide-semiconductor, one end of second capacitance group is connected between the 4th capacitor and the 3rd resistor,
The other end of second capacitance group is connected to the positive between the 4th resistance of second diode, and the signal is defeated
Enter end and be used for input pulse signal, the first branch controls the main metal-oxide-semiconductor for dividing to the pulse signal
Conducting, the first branch are also connected with the power supply, and the second branch is controlled for dividing to the pulse signal
Make the main metal-oxide-semiconductor shutdown.
2. the driving circuit of metal-oxide-semiconductor according to claim 1, which is characterized in that the first capacitor group includes the second electricity
Hold and third capacitor, second capacitor are in parallel with the third capacitor.
3. the driving circuit of metal-oxide-semiconductor according to claim 1, which is characterized in that second capacitance group includes the 5th electricity
Hold and the 6th capacitor, the 5th capacitor and the 6th capacitor are in parallel.
4. the driving circuit of metal-oxide-semiconductor according to claim 1, which is characterized in that it further include isolating chip, the isolated core
One end of piece is connected between the first branch and the second branch, and the other end of the isolating chip and the signal are defeated
Enter end connection.
5. the driving circuit of metal-oxide-semiconductor according to claim 4, which is characterized in that the isolating chip include input pin,
Output pin and voltage input pin, the input pin are connect with the signal input part, and the output pin is connected to
Between the first branch and the second branch, the voltage input pin is connected to the power supply.
6. the driving circuit of metal-oxide-semiconductor according to claim 5, which is characterized in that it further include the 5th resistance and the 7th capacitor,
5th resistance is set between the voltage input pin and the power supply, and one end of the 7th capacitor is connected to described
Between voltage input pin and the 5th resistance, the other end of the 7th capacitor is grounded.
7. the driving circuit of metal-oxide-semiconductor according to claim 1, which is characterized in that further include third capacitance group, the third
Capacitance group one end is connect with the power supply, and the other end ground connection of the third capacitance group, the third capacitance group is for stablizing institute
State the output voltage of power supply.
8. the driving circuit of metal-oxide-semiconductor according to claim 7, which is characterized in that the third capacitance group includes the 8th electricity
Hold and the 9th capacitor, the 8th capacitor and the 9th capacitor are in parallel.
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| CN201610796333.9A CN106330153B (en) | 2016-08-31 | 2016-08-31 | A kind of driving circuit of metal-oxide-semiconductor |
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| CN101339745A (en) * | 2007-07-03 | 2009-01-07 | 统宝光电股份有限公司 | Level shifter, interface driving circuit and image displaying system |
| CN201142635Y (en) * | 2007-12-18 | 2008-10-29 | 深圳创维－Rgb电子有限公司 | DC-AC inversion boosted circuit |
| US8310284B2 (en) * | 2011-01-07 | 2012-11-13 | National Semiconductor Corporation | High-voltage gate driver that drives group III-N high electron mobility transistors |
| CN103683872A (en) * | 2012-09-11 | 2014-03-26 | 深圳市海洋王照明工程有限公司 | Half-bridge driving circuit |
| CN203813657U (en) * | 2014-03-24 | 2014-09-03 | 上海智浦欣微电子有限公司 | Power supply self-adaptive charge pump device |
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|---|---|
| CN106330153A (en) | 2017-01-11 |
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