CN106328830A - AMOLED display manufacturing method and AMOLED display - Google Patents
AMOLED display manufacturing method and AMOLED display Download PDFInfo
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- CN106328830A CN106328830A CN201610863729.0A CN201610863729A CN106328830A CN 106328830 A CN106328830 A CN 106328830A CN 201610863729 A CN201610863729 A CN 201610863729A CN 106328830 A CN106328830 A CN 106328830A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
The invention relates to an AMOLED display manufacturing method and AMOLED display. Technically, the method comprises the following steps: preparing a phase change material layer and a light emitting layer on one side of a first substrate in sequence, followed by the covering and the laser processing of a mask pattern at the other side of the first substrate to obtain part A; preparing a film transistor, an anode and a hole layer on a second substrate in sequence to obtain part B; bonding the light emitting layer of part A and the hole layer of part B; and removing the first substrate and the phase change material layer, preparing in sequence an electron layer and a cathode at the position of the original phase change material layer, and then packaging for an AMOLED display. Through the use of a phase change material layer in the manufacturing process, it is possible to reduce the pixel pitch in the light emitting layer without changing other materials and steps to obtain an AMOLED display with a high PPI.
Description
Technical field
The application relates to technical field of flat panel display, specifically, relates to manufacture method and the phase of a kind of displayer
The displayer answered.
Background technology
Active matrix organic light-emitting diode (Active-matrix organic light emitting diode, letter
Claiming AMOLED) display is referred to as Display Technique of future generation.Compared with the liquid crystal displays such as existing mobile phone, TV, display,
Displayer has broader visual angle, higher refresh rate and thinner size, and it has self-luminous, wide viewing angle, corresponding
The features such as the time is short, high luminous efficiency, colour gamut are wide, running voltage is low are it is considered to be most potential display device.
Number of pixels (Pixels Per Inch is called for short PPI) is the unit of image resolution ratio, and what it represented is display
Pixel (Pixel) number that per inch is had.Therefore PPI numerical value is the highest, and i.e. representing display screen can show with the highest density
Diagram picture, degree of verisimilitude is the highest.But on the basis of current material and process equipment, the displayer making high PPI limits
Bigger.
Summary of the invention
The primary and foremost purpose of the application is to propose the manufacture method of a kind of displayer.
Second purpose of the application is to propose the displayer that described method prepares.
In order to complete the purpose of the application, the technical scheme of employing is:
The application relates to the manufacture method of a kind of displayer, and described method at least comprises the following steps:
Step one, after the side of first substrate is sequentially prepared phase-change material layers and luminescent layer, at another of first substrate
Side mask film covering figure also carries out laser treatment, obtains part A；
Step 2, on second substrate, make thin film transistor (TFT), anode and cavitation layer successively, obtain part B；
The cavitation layer laminating of step 3, the luminescent layer making part A and part B；And
Step 4, remove described first substrate and described phase-change material layers, be sequentially prepared in the position of former phase-change material layers
Electronic shell and negative electrode, obtain described displayer after encapsulation.
Preferably, described first substrate is glass substrate.
Preferably, the wavelength of described laser treatment is 33nm, 308nm or 355nm, and energy density is 10～5000Mj/
cm2, frequency is 10～3000Hz, and energy is 10～1000 MJs, and the time is 1～500ns.
Preferably, by the way of vacuum thermal evaporation, luminous organic material is used to become on the surface of described phase-change material layers
Film, obtains described luminescent layer.
Preferably, when being deposited with luminescent layer, described phase-change material layers does not changes.
Preferably, the phase-change material in described phase-change material layers is chlorinated polyethylene.
Preferably, by sputtering or evaporation process, electronic shell and negative electrode are placed on luminescent layer.
The application further relates to the displayer that described method prepares.
Preferably, described display includes second substrate, AMOLED light-emitting zone and encapsulated layer, described AMOLED luminous zone
Territory is arranged on second substrate, and encapsulated layer is arranged on top and the surrounding of AMOLED light-emitting zone, is sealed by AMOLED light-emitting zone
Dress, negative electrode that described AMOLED light-emitting zone includes setting gradually from top to bottom, electronic shell, luminescent layer, cavitation layer, anode and thin
Film transistor, described thin film transistor (TFT) is fitted with described second substrate.
The technical scheme of the application at least has a following beneficial effect:
By using phase-change material layers in the manufacturing process of displayer, it is possible to do not change at other material and step
On the premise of change, reduce the pel spacing in luminescent layer, obtain the displayer with high PPI.
Accompanying drawing explanation
Fig. 1 is the structural representation of displayer prepared by herein described method.
Fig. 2 is the schematic diagram of rgb pixel arrangement in the application displayer.
Fig. 3 is the manufacturing process schematic diagram of part A in the application.
Fig. 4 is part A and part B cohesive process schematic diagram in the application.
Fig. 5 is to remove first substrate and phase-change material layers process schematic in the application.
Wherein, 1 is second substrate, and 2 is TFT, and 3 is anode, and 4 is cavitation layer, and 51,52 and 53 is luminescent layer, and 6 is electronics
Layer, 7 is negative electrode, and 8 is encapsulated layer, and 9 is phase-change material layers, and 10 is first substrate, and 111,112 and 113 is mask, and 210 is pixel,
211,212 and 213 is sub-pixel, and 30 is part A, and 31 is part B.
Detailed description of the invention
Below in conjunction with specific embodiment, the application is expanded on further.Should be understood that these embodiments are merely to illustrate the application
Rather than restriction scope of the present application.
The application relates to the manufacture method of a kind of displayer, and described method at least comprises the following steps:
Step one, after the side of first substrate is sequentially prepared phase-change material layers and luminescent layer, at another of first substrate
Side mask film covering figure also carries out laser treatment, obtains part A；
Step 2, on second substrate, make thin film transistor (TFT) (TFT), anode and cavitation layer successively, obtain part B；
The cavitation layer laminating of step 3, the luminescent layer making part A and part B；And
Step 4, remove described first substrate and described phase-change material layers, be sequentially prepared in the position of former phase-change material layers
Electronic shell and negative electrode, obtain described displayer after encapsulation.
As a kind of improvement of the application method, it is coated with phase-change material layers on the first substrate, then at phase-change material layers
Upper evaporation luminescent layer.
As a kind of improvement of the application method, described first substrate is glass substrate, on the first substrate mask film covering
After figure, carried out laser treatment, so that phase-change material deformation, reduce adjacent pixel and sub-pixel pitch, increase PPI.
The wavelength of described laser treatment is 33nm, 308nm or 355nm, and energy density is 10～5000Mj/cm2, frequency be 10～
3000Hz, energy is 10～1000 MJs, and the time is 1～500ns.
As a kind of improvement of the application method, by the way of vacuum thermal evaporation, use luminous organic material described
The surface filming of phase-change material layers, obtains described luminescent layer.Luminescent material in luminescent layer determines the glow color of display,
By selecting different luminous organic materials can obtain HONGGUANG, blue light and green glow, it is achieved full-color EL display, it is also possible to produce white
Light.
As a kind of improvement of the application method, when being deposited with luminescent layer, phase-change material layers does not changes.The most therein
Phase-change material does not undergoes phase transition or decomposes.Described phase-change material layers is chlorinated polyethylene.
As a kind of improvement of the application method, described thin film transistor (TFT) includes grid, insulating barrier, source electrode and drain electrode, institute
The drain electrode stating thin film transistor (TFT) is electrically connected with described anode.
As a kind of improvement of the application method, finally by sputtering or evaporation electronic shell and negative electrode be placed in luminescent layer it
On.Described second substrate can use plastics, metal or glass material, owing to AMOLED can make on the substrate of unlike material
Making, replace common glass substrate as chosen the good sheet plastic of pliability or foil, can produce in shape can
The flexible display device of bending fold.
The application further relates to the displayer made by above-mentioned method, and it includes that second substrate, AMOLED send out
Light region and encapsulated layer.Described AMOLED light-emitting zone is arranged on second substrate, and encapsulated layer is arranged on AMOLED light-emitting zone
Top and surrounding, by AMOLED light-emitting zone encapsulate.Described AMOLED light-emitting zone includes the moon set gradually from top to bottom
Pole, electronic shell, luminescent layer, cavitation layer, anode and TFT.Described TFT fits with described second substrate.
Embodiment 1
As it is shown in figure 1, the structure of the displayer of herein described method offer and existing displayer
Identical, described displayer includes second substrate 1, AMOLED light-emitting zone and encapsulated layer 8, described AMOLED light-emitting zone
Being arranged on second substrate 1, encapsulated layer 8 is arranged on top and the surrounding of AMOLED light-emitting zone, is sealed by AMOLED light-emitting zone
Dress.
Negative electrode 7 that described AMOLED light-emitting zone includes setting gradually from top to bottom, electronic shell 6, luminescent layer 51/52/53,
Cavitation layer 4, anode 3 and thin film transistor (TFT) 2 (TFT).Described thin film transistor (TFT) 2 is fitted with described second substrate 1.
Wherein, described second substrate 1 is typically made up of transparent polymer material, as the substrate of displayer, as
Polyimides (PI).Described thin film transistor (TFT) 2 includes grid, gate insulation layer, active layer, source electrode and drain electrode, described drain electrode and institute
State anode 3 to be electrically connected with.Described luminescent layer 51/52/53 comprises multiple luminous organic material.Fig. 2 is the arrangement of standard rgb pixel
Schematic diagram.Containing several pixels 210 in this figure, the shape of pixel 210 is generally rectangular, and each pixel 210 includes
Three sub-pixels, the shape of sub-pixel is the most rectangular, and three sub-pixels are respectively red 211, green 212 and blue 213 three primary colories,
Can not arrange with the arrangement mode in Fig. 2 in any permutation in the position of certain three sub-pixels.Exist between pixel and pixel
Non-luminous region between pixel, between sub-pixel and sub-pixel, there is non-luminous region between sub-pixel.Certainly pixel 210 and son
The shape of pixel is not limited to rectangle, it is also possible to be regular hexagon, triangle, circle, irregular polygon etc..
As it is shown on figure 3, the manufacturing process of the application part A 30 is: be deposited with phase transformation material successively in the side of first substrate 10
The bed of material 9 and luminescent layer 51/52/53, described phase-change material layers 9 fits with first substrate 10, and described luminescent layer 51/52/53 is distributed
In phase-change material layers 9 away from the side of first substrate 10, and fit with phase-change material layers 9.Then, at another of first substrate 10
Side makes mask film covering figure 111/112/113 and carries out laser treatment, obtains part A 30.
Computing formula according to PPI:
Described AA region is viewing area.On the premise of the light-emitting area of viewing area is constant, as PPI need to be increased, need
Number of pixels in unit are to be increased.The technique being successively deposited with from prior art is different, and the application is in displayer
Preparation process in use phase-change material layers, utilize its characteristic undergone phase transition in the case of temperature and intensity of illumination change,
Make the spacing between neighbor reduce, thus increase PPI.Requirement to phase-change material is that internal structure changes under laser irradiates
Becoming, the body of phase-change material shrinks, to reduce the pel spacing in luminescent layer 51/52/53 and sub-pixel pitch.Simultaneously aforementioned
During evaporation luminescent layer 51/52/53, phase-change material does not undergoes phase transition or decomposes.In the present embodiment, chlorine selected by described phase-change material
Change polyethylene (CPE), the saturated macromolecular material that i.e. high density polyethylene (HDPE) (HDPE) generates, composition unit through chlorination substitution reaction
Element is C, H and Cl, and chlorinity is typically 30～50%.
Described first substrate 10 is silicon or ITO, after making mask pattern, is carried out at laser on first substrate 10
Reason, so that phase-change material deformation, reduces adjacent pixel and sub-pixel pitch, increases PPI, and the wavelength of described laser treatment is
33nm, 308nm or 355nm, energy density is 10～5000Mj/cm2, frequency is 10～3000Hz, and energy is 10～1000 millis
Jiao, the time is 1～500ns.
By the way of vacuum thermal evaporation, use luminous organic material at the surface filming of phase-change material layers 9, obtain described
Luminescent layer 51/52/53.Luminescent material in luminescent layer 51/52/53 determines the glow color of display, by selecting difference
Luminous organic material can obtain HONGGUANG, blue light and green glow, it is achieved full-color EL display, it is also possible to produce white light.
It follows that on second substrate 1 evaporated film transistor 2, anode 3 and cavitation layer 4 successively, obtain part B 31.Institute
Stating thin film transistor (TFT) 2 to fit with second substrate 1, anode 3 is fitted with thin film transistor (TFT) 2, and cavitation layer 4 is fitted with anode 3.Then lead to
Crossing evaporation makes the luminescent layer 51/52/53 of part A 30 and the cavitation layer 4 of part B 31 fit, and this process is as shown in Figure 4.
Finally, at a temperature of higher than 170 DEG C, process 1～500ns, make phase-change material layers 9 and luminescent layer 51/52/53 point
From, to remove first substrate 10 and phase-change material layers 9.The opposite side fitted in luminescent layer 51/52/53 and cavitation layer 4 steams successively
Plating electronic shell 6 and negative electrode 7, obtain described displayer after encapsulation.
In the present embodiment, phase-change material shrinkage rates is about 1/3, initial between neighbor in luminescent layer 51/52/53
Spacing is 100 μm, initial separation average out to 15 μm between adjacent subpixels, is 5 μm after contraction.For 55inch display,
PPI increases about 5% compared with comparative example.
Comparative example
Do not use phase-change material layers 9, according to second substrate 1-TFT2-anode 3-cavitation layer 4-luminescent layer 51/52/53-electricity
The order of sublayer 6-negative electrode 7-encapsulated layer 8 successively prepares displayer, and its architectural feature is same as in Example 1, luminescent layer
Initial separation average out to 15 μm of 51/52/53 sub-pixel, neighbor spacing is 100 μm, for 55inch display, PPI
For 2K.
Although the application is open as above with preferred embodiment, but is not for limiting claim.Any this area skill
Art personnel, on the premise of conceiving without departing from the application, can make some possible variations and amendment, therefore the application
Protection domain should be defined in the range of standard with claim.
Claims (9)
1. the manufacture method of a displayer, it is characterised in that described method at least comprises the following steps:
Step one, after the side of first substrate is sequentially prepared phase-change material layers and luminescent layer, the opposite side at first substrate covers
Lid mask pattern also carries out laser treatment, obtains part A；
Step 2, on second substrate, make thin film transistor (TFT), anode and cavitation layer successively, obtain part B；
The cavitation layer laminating of step 3, the luminescent layer making part A and part B；And
Step 4, remove described first substrate and described phase-change material layers, be sequentially prepared electronics in the position of former phase-change material layers
Layer and negative electrode, obtain described displayer after encapsulation.
Method the most according to claim 1, it is characterised in that described first substrate is glass substrate.
Method the most according to claim 1, it is characterised in that the wavelength of described laser treatment be 33nm, 308nm or
355nm, energy density is 10～5000Mj/cm2, frequency is 10～3000Hz, and energy is 10～1000 MJs, the time be 1～
500ns。
Method the most according to claim 1, it is characterised in that by the way of vacuum thermal evaporation, uses organic light emission material
Expect the surface filming at described phase-change material layers, obtain described luminescent layer.
Method the most according to claim 4, it is characterised in that when being deposited with described luminescent layer, described phase-change material layers is not
Change.
Method the most according to claim 5, it is characterised in that the phase-change material in described phase-change material layers is chlorinated polyethylene
Alkene.
Method the most according to claim 1, it is characterised in that electronic shell and negative electrode are placed in by sputtering or evaporation process
On luminescent layer.
8. a displayer, it is characterised in that described displayer is by institute any one of claim 1 to 7
The method stated prepares.
Displayer the most according to claim 8, it is characterised in that described display include second substrate,
AMOLED light-emitting zone and encapsulated layer, described AMOLED light-emitting zone is arranged on second substrate, and encapsulated layer is arranged on AMOLED
The top of light-emitting zone and surrounding, encapsulate AMOLED light-emitting zone, and described AMOLED light-emitting zone includes the most successively
Negative electrode, electronic shell, luminescent layer, cavitation layer, anode and the thin film transistor (TFT) arranged, described thin film transistor (TFT) and described second substrate
Laminating.
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| CN201610863729.0A CN106328830B (en) | 2016-09-29 | 2016-09-29 | The production method and displayer of displayer |
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| CN201610863729.0A CN106328830B (en) | 2016-09-29 | 2016-09-29 | The production method and displayer of displayer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342306A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display panels and preparation method thereof |
| CN107342307A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display modules |
| CN108598120A (en) * | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel and display device |
| CN111326638A (en) * | 2018-12-14 | 2020-06-23 | 云谷（固安）科技有限公司 | Light emitting unit and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165687A (en) * | 1999-06-29 | 2000-12-26 | Eastman Kodak Company | Standard array, programmable image forming process |
| US20090075214A1 (en) * | 2007-09-13 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light emitting device, and evaporation donor substrate |
| JP2013026285A (en) * | 2011-07-15 | 2013-02-04 | Fujitsu Ltd | Infrared ray detector and infrared ray detector manufacturing method |
| US20130043375A1 (en) * | 2011-08-15 | 2013-02-21 | Clara BALEINE | Reconfigurable phase change material masks for electro-optical compressive sensing |
-
2016
- 2016-09-29 CN CN201610863729.0A patent/CN106328830B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6165687A (en) * | 1999-06-29 | 2000-12-26 | Eastman Kodak Company | Standard array, programmable image forming process |
| US20090075214A1 (en) * | 2007-09-13 | 2009-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light emitting device, and evaporation donor substrate |
| JP2013026285A (en) * | 2011-07-15 | 2013-02-04 | Fujitsu Ltd | Infrared ray detector and infrared ray detector manufacturing method |
| US20130043375A1 (en) * | 2011-08-15 | 2013-02-21 | Clara BALEINE | Reconfigurable phase change material masks for electro-optical compressive sensing |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342306A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display panels and preparation method thereof |
| CN107342307A (en) * | 2017-06-14 | 2017-11-10 | 合肥市惠科精密模具有限公司 | A kind of AMOLED display modules |
| CN108598120A (en) * | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method, display panel and display device |
| US11239256B2 (en) | 2018-04-27 | 2022-02-01 | Boe Technology Group Co., Ltd. | Display substrate, manufacturing method thereof, display panel, and display device |
| CN111326638A (en) * | 2018-12-14 | 2020-06-23 | 云谷（固安）科技有限公司 | Light emitting unit and manufacturing method thereof |
| CN111326638B (en) * | 2018-12-14 | 2021-10-26 | 云谷（固安）科技有限公司 | Light emitting unit and manufacturing method thereof |
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| Publication number | Publication date |
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| CN106328830B (en) | 2018-04-24 |
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