CN106328791B - A kind of semiconductor light-emitting-diode light source and backlight module - Google Patents
A kind of semiconductor light-emitting-diode light source and backlight module Download PDFInfo
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- CN106328791B CN106328791B CN201610813278.XA CN201610813278A CN106328791B CN 106328791 B CN106328791 B CN 106328791B CN 201610813278 A CN201610813278 A CN 201610813278A CN 106328791 B CN106328791 B CN 106328791B
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- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000084 colloidal system Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
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- 230000000694 effects Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of semiconductor light-emitting-diode light source and backlight modules, belong to technical field of semiconductors.Semiconductor light-emitting-diode light source includes PCB, and the light-emitting diode chip for backlight unit arranged in array, light-emitting diode chip for backlight unit includes substrate, III nitride semiconductor layer of N-shaped, active layer, III nitride semiconductor layer of p-type, first optical reflecting layer, insulating layer, n-type electrode and the setting of p-type electrode are on the insulating layer, n-type electrode is electrically connected with III nitride semiconductor layer of N-shaped, p-type electrode is electrically connected with III nitride semiconductor layer of p-type, n-type electrode and p-type electrode are respectively welded on PCB, the top surface of light-emitting diode chip for backlight unit and three sides are equipped with the second optical reflecting layer, the light extraction side of second optical reflecting layer and light-emitting diode chip for backlight unit is equipped with fluorescent powder colloid, the light extraction side of light-emitting diode chip for backlight unit is the side that the second optical reflecting layer is not arranged for light-emitting diode chip for backlight unit.The requirement of backlight module may be implemented in the present invention.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of semiconductor light-emitting-diode light source and backlight module.
Background technology
Light emitting diode (English：Light Emitting Diode, abbreviation LED) there is high brightness, low in calories, long-life
The advantages that, it is referred to as 21 century most promising green illumination light source, is applied in the products such as light source, lighting apparatus.
Backlight module is liquid crystal display (English：Liquid Crystal Display, abbreviation LCD) panel key zero
One of component, function are the light source that supply brightness is sufficient and is evenly distributed, can normally show image.Backlight module master
It to be made of light source, light guide plate, optical film piece, plastic frame etc., wherein LED realizations may be used in most important light source.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems：
The conventional package mode of LED does not reach chip size packages (English：Chip Scale Package, referred to as
CSP), LED is larger as the light source volume in backlight module, cannot be satisfied the requirement of backlight module miniaturization.
Invention content
In order to solve problems in the prior art, an embodiment of the present invention provides a kind of semiconductor light-emitting-diode light source and the back ofs the body
Optical mode group.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of semiconductor light-emitting-diode light source, two poles of the semiconductor light emitting
Pipe light source includes PCB and the light-emitting diode chip for backlight unit that is arranged in array, the light-emitting diode chip for backlight unit include substrate and
Stack gradually III nitride semiconductor layer of N-shaped over the substrate, active layer, III nitride semiconductor layer of p-type, first
Optical reflecting layer, insulating layer, n-type electrode and p-type electrode are arranged on the insulating layer, the n-type electrode and III race of the N-shaped
Nitride semiconductor layer is electrically connected, and the p-type electrode is electrically connected with III nitride semiconductor layer of the p-type, the n-type electrode
It is respectively welded on the pcb with the p-type electrode, the top surface of the light-emitting diode chip for backlight unit and three sides are equipped with second
The light extraction side of optical reflecting layer, second optical reflecting layer and the light-emitting diode chip for backlight unit is equipped with fluorescent powder colloid,
The top surface of the light-emitting diode chip for backlight unit is the surface where the substrate, the side of the light-emitting diode chip for backlight unit be with it is described
The light extraction side on the adjacent surface in the top surface of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit is the light-emitting diodes tube core
The side of second optical reflecting layer is not arranged for piece.
Optionally, the light extraction side of each light-emitting diode chip for backlight unit is identical.
Preferably, each light-emitting diode chip for backlight unit is arranged along straight line, the straight line and the light emitting diode
The light extraction side of chip is parallel.
It is highly preferred that the PCB is cuboid.
Further, the n-type electrode of each light-emitting diode chip for backlight unit and p-type electrode are close to the light emitting diode
The light extraction side of chip is arranged, or is close to the opposite side setting in light extraction side of the light-emitting diode chip for backlight unit.
Optionally, the PCB includes support plate and the circuit-line and pad that are arranged in the support plate, described
Circuit-line is electrically connected with the pad, and the pad is for welding the n-type electrode or the p-type electrode.
Preferably, the PCB is made of ceramics, metal, glass fibre.
On the other hand, an embodiment of the present invention provides a kind of backlight module, the backlight module includes semiconductor light emitting two
Pole pipe light source and light guide plate, the semiconductor light-emitting-diode light source include PCB and the light-emitting diodes tube core that is arranged in array
Piece, the light-emitting diode chip for backlight unit include substrate and stack gradually III group-III nitride semiconductor of N-shaped over the substrate
Layer, active layer, III nitride semiconductor layer of p-type, the first optical reflecting layer, insulating layer, n-type electrode and the setting of p-type electrode exist
On the insulating layer, the n-type electrode is electrically connected with III nitride semiconductor layer of the N-shaped, the p-type electrode and the p
III nitride semiconductor layer of type is electrically connected, and the n-type electrode and the p-type electrode are respectively welded on the pcb, the hair
The top surface of luminous diode chip and three sides are equipped with the second optical reflecting layer, second optical reflecting layer and described shine
The light extraction side of diode chip for backlight unit is equipped with fluorescent powder colloid, light extraction side and the light guide plate of the light-emitting diode chip for backlight unit
Side surface coupling together, the top surface of the light-emitting diode chip for backlight unit is the surface where the substrate, the light emitting diode
The side of chip is the surface adjacent with the top surface of the light-emitting diode chip for backlight unit, the light extraction side of the light-emitting diode chip for backlight unit
The side of second optical reflecting layer is not set for the light-emitting diode chip for backlight unit
Optionally, the light extraction side of each light-emitting diode chip for backlight unit is identical.
Preferably, each light-emitting diode chip for backlight unit is arranged along straight line, the straight line and the light emitting diode
The light extraction side of chip is parallel.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
By the way that light-emitting diode chip for backlight unit to be directly welded on PCB, the requirement of CSP can be reached, be easy to minimize, it can be with
Applied in backlight module.And fabrication schedule is simple, the time is short, at low cost, yield is high.In addition, in III group-III nitride of p-type half
First optical reflecting layer is set in conductor layer, the second optical reflecting layer is set on the top surface of chip and three sides, luminous two
Only there is no optical reflecting layer, the light that active layer is sent out that can be emitted from this side there are one side on pole pipe chip, meets
The light extraction requirement of backlight module, while other surfaces in addition to this side are equipped with optical reflecting layer, it can be to avoid light
Outgoing improves light extraction efficiency and light-source brightness.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of front view for semiconductor light-emitting-diode light source that the embodiment of the present invention one provides；
Fig. 2 is a kind of vertical view for semiconductor light-emitting-diode light source that the embodiment of the present invention one provides.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of semiconductor light-emitting-diode light sources, are suitable for backlight, illumination etc., referring to figure
1, which includes PCB 11 and the light-emitting diode chip for backlight unit that is arranged in array, light emitting diode
Chip includes III nitride semiconductor layer 2 of substrate 1 and the N-shaped being sequentially laminated on substrate 1, active layer 3, III race's nitrogen of p-type
Compound semiconductor layer 4, the first optical reflecting layer 5, insulating layer 7, n-type electrode 9 and p-type electrode 10 are arranged on insulating layer 7, N-shaped
Electrode 9 is electrically connected with III nitride semiconductor layer 2 of N-shaped, and p-type electrode 10 is electrically connected with III nitride semiconductor layer 4 of p-type, n
Type electrode 9 and p-type electrode 10 are respectively welded on PCB 11, and the top surface of light-emitting diode chip for backlight unit and three sides are equipped with the second light
The light extraction side of reflecting layer 12, the second optical reflecting layer 12 and light-emitting diode chip for backlight unit is equipped with fluorescent powder colloid 13, shines
The top surface of diode chip for backlight unit is the surface where substrate 1, and the side of light-emitting diode chip for backlight unit is the top with light-emitting diode chip for backlight unit
The light extraction side on the adjacent surface in face, light-emitting diode chip for backlight unit is that the second optical reflecting layer 12 is not arranged for light-emitting diode chip for backlight unit
Side.
Optionally, referring to Fig. 2, the light extraction side 200 of each light-emitting diode chip for backlight unit can be identical.
Preferably, referring to Fig. 2, each light-emitting diode chip for backlight unit 300 can be arranged along straight line, straight line and light-emitting diodes
The light extraction side 200 of tube chip is parallel.
It is highly preferred that referring to Fig. 2, PCB 11 can be cuboid.
Further, the n-type electrode of each light-emitting diode chip for backlight unit and p-type electrode can be close to light-emitting diode chip for backlight unit
Light extraction side setting, or be close to light-emitting diode chip for backlight unit light extraction side it is opposite side setting.
Optionally, PCB 11 may include the circuit-line and pad of support plate and setting on the supporting plate, circuit line
Road is electrically connected with pad, and pad is for welding n-type electrode or p-type electrode.
Preferably, PCB 11 may be used ceramics, metal, glass fibre and be made.
Optionally, any one of transparent insulation materials such as sapphire, silicon carbide, quartz glass may be used in substrate 1.
Specifically, III nitride semiconductor layer 2 of N-shaped can be the GaN layer of N-shaped doping, III group-III nitride semiconductor of p-type
Layer 4 can be the GaN layer of p-type doping；Active layer 3 may include n-layer quantum well layer and n+1 layers of quantum barrier layer, and n is positive integer,
Quantum well layer and quantum barrier layer are alternately laminated；Quantum well layer can be InGaN layer, and quantum barrier layer can be GaN layer.
Optionally, the first optical reflecting layer 5 may include that metal film, multilayer dielectric film or alternately stacked multilayer are situated between
Plasma membrane and metal film.
Preferably, multilayer dielectric film may include alternately stacked silica and titanium oxide, to reach high reflectance.
Preferably, at least one of Ag, Al, Au, Pt, Rh may be used in metal film, to reach high reflectance.
In a kind of realization method of the present embodiment, it can be equipped with referring to Fig. 1, on the first optical reflecting layer 5 and extend to N-shaped
The inner wall in the first optical reflecting layer 5 and first through hole 6 is arranged in the first through hole 6 of III nitride semiconductor layer 2, insulating layer 7
On, insulating layer 7 is equipped with the second through-hole 8 for extending to the first optical reflecting layer 5, and n-type electrode 9 passes through first through hole 6 and N-shaped III
Nitride semiconductor layer 2 is electrically connected, and p-type electrode 10 is electrically connected by the second through-hole 8 with the first optical reflecting layer 5.
It can be equipped in another realization method of the present embodiment, on the first optical reflecting layer and extend to III race's nitrogen of N-shaped
The first through hole of compound semiconductor layer and the third through-hole for extending to III nitride semiconductor layer of p-type, insulating layer setting exist
On the inner wall of the inner wall and third through-hole of first optical reflecting layer and first through hole, n-type electrode passes through first through hole and N-shaped
III nitride semiconductor layer is electrically connected, and p-type electrode is electrically connected by third through-hole with III nitride semiconductor layer of p-type.
Optionally, any one of silica, silicon nitride, aluminium oxide, gallium oxide may be used in insulating layer 7.
Optionally, n-type electrode 9 may be used one or more in Au, Al, Cu, Ag, Fe, Ti, Cr, Pt, Ni.
Optionally, p-type electrode 10 may be used one or more in Au, Al, Cu, Ag, Fe, Ti, Cr, Pt, Ni.
Optionally, the second optical reflecting layer 12 may include multilayer dielectric film or alternately stacked multilayer dielectric film and
Metal film.
Preferably, multilayer dielectric film may include alternately stacked silica and titanium oxide, to reach high reflectance.
Preferably, at least one of Ag, Al, Au, Pt, Rh may be used in metal film, to reach high reflectance.
It should be noted that when the second optical reflecting layer includes alternately stacked multilayer dielectric film and metal film, with lining
What bottom etc. was in direct contact is multilayer dielectric film.
The embodiment of the present invention can reach the requirement of CSP, easily by the way that light-emitting diode chip for backlight unit to be directly welded on PCB
In miniaturization, can be applied in backlight module.And fabrication schedule is simple, the time is short, at low cost, yield is high.In addition, in p
The first optical reflecting layer is set in III nitride semiconductor layer of type, the second optics is set on the top surface of chip and three sides
Reflecting layer does not only have optical reflecting layer, the light that active layer is sent out can be from this on light-emitting diode chip for backlight unit there are one side
Side is emitted, and meets the light extraction requirement of backlight module, while other surfaces in addition to this side are equipped with optical reflecting layer,
Light extraction efficiency and light-source brightness can be improved to avoid beam projecting.
Embodiment two
An embodiment of the present invention provides a kind of backlight module, which includes the half of light guide plate and the offer of embodiment one
Conductor LED source, light extraction side and the light guide plate coupling of the light-emitting diode chip for backlight unit in semiconductor light-emitting-diode light source
It is combined.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of semiconductor light-emitting-diode light source, which is characterized in that the semiconductor light-emitting-diode light source include PCB, with
And the light-emitting diode chip for backlight unit arranged in array, the light-emitting diode chip for backlight unit include substrate and are sequentially laminated on the lining
III nitride semiconductor layer of N-shaped, active layer, III nitride semiconductor layer of p-type, the first optical reflecting layer, insulation on bottom
Layer, n-type electrode and p-type electrode are arranged on the insulating layer, the n-type electrode and III nitride semiconductor layer of the N-shaped
Electrical connection, the p-type electrode are electrically connected with III nitride semiconductor layer of the p-type, the n-type electrode and the p-type electrode
It is respectively welded on the pcb, the top surface of the light-emitting diode chip for backlight unit and three sides are equipped with the second optical reflecting layer, institute
The light extraction side for stating the second optical reflecting layer and the light-emitting diode chip for backlight unit is equipped with fluorescent powder colloid, the light emitting diode
The top surface of chip is the surface where the substrate, and the side of the light-emitting diode chip for backlight unit is and the light-emitting diode chip for backlight unit
The adjacent surface in top surface, the light extraction side of the light-emitting diode chip for backlight unit is that described the is not arranged for the light-emitting diode chip for backlight unit
The side of two optical reflecting layers.
2. semiconductor light-emitting-diode light source according to claim 1, which is characterized in that each light-emitting diodes tube core
The light extraction side of piece is identical.
3. semiconductor light-emitting-diode light source according to claim 2, which is characterized in that each light-emitting diodes tube core
Piece is arranged along straight line, and the straight line is parallel with the light extraction side of the light-emitting diode chip for backlight unit.
4. semiconductor light-emitting-diode light source according to claim 3, which is characterized in that the PCB is cuboid.
5. semiconductor light-emitting-diode light source according to claim 4, which is characterized in that each light-emitting diodes tube core
The n-type electrode and p-type electrode of piece are close to the light extraction side setting of the light-emitting diode chip for backlight unit, or are close to described shine
The side that the light extraction side of diode chip for backlight unit is opposite is arranged.
6. according to claim 1-5 any one of them semiconductor light-emitting-diode light sources, which is characterized in that the PCB includes
Support plate and the circuit-line and pad being arranged in the support plate, the circuit-line are electrically connected with the pad, institute
Pad is stated for welding the n-type electrode or the p-type electrode.
7. semiconductor light-emitting-diode light source according to claim 6, which is characterized in that the PCB is using ceramics, gold
Belong to, glass fibre is made.
8. a kind of backlight module, which is characterized in that the backlight module includes semiconductor light-emitting-diode light source and light guide plate, institute
It includes PCB and the light-emitting diode chip for backlight unit that is arranged in array to state semiconductor light-emitting-diode light source, the light-emitting diodes tube core
Piece includes substrate and stacks gradually III nitride semiconductor layer of N-shaped over the substrate, active layer, the nitridation of III race of p-type
Object semiconductor layer, the first optical reflecting layer, insulating layer, n-type electrode and p-type electrode are arranged on the insulating layer, the N-shaped electricity
Pole is electrically connected with III nitride semiconductor layer of the N-shaped, the p-type electrode and the p-type III nitride semiconductor layer electricity
Connection, the n-type electrode and the p-type electrode are respectively welded on the pcb, the top surface of the light-emitting diode chip for backlight unit and three
A side is equipped with the second optical reflecting layer, on the light extraction side of second optical reflecting layer and the light-emitting diode chip for backlight unit
Equipped with fluorescent powder colloid, the light extraction side of the light-emitting diode chip for backlight unit is described together with the side surface coupling of the light guide plate
The top surface of light-emitting diode chip for backlight unit is the surface where the substrate, and the side of the light-emitting diode chip for backlight unit is to shine with described
The adjacent surface in the top surface of diode chip for backlight unit, the light extraction side of the light-emitting diode chip for backlight unit be the light-emitting diode chip for backlight unit not
The side of second optical reflecting layer is set.
9. backlight module according to claim 8, which is characterized in that the light extraction side of each light-emitting diode chip for backlight unit
It is identical.
10. backlight module according to claim 9, which is characterized in that each light-emitting diode chip for backlight unit is straight along one
Line arranges, and the straight line is parallel with the light extraction side of the light-emitting diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610813278.XA CN106328791B (en) | 2016-09-09 | 2016-09-09 | A kind of semiconductor light-emitting-diode light source and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610813278.XA CN106328791B (en) | 2016-09-09 | 2016-09-09 | A kind of semiconductor light-emitting-diode light source and backlight module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106328791A CN106328791A (en) | 2017-01-11 |
| CN106328791B true CN106328791B (en) | 2018-08-24 |
Family
ID=57787761
Family Applications (1)
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| CN101868865A (en) * | 2007-11-20 | 2010-10-20 | 皇家飞利浦电子股份有限公司 | Side emitting device with wavelength conversion |
| CN103390713A (en) * | 2013-07-19 | 2013-11-13 | 李刚 | Semi-conductor luminescent device provided with light reflection layer |
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| WO2010044240A1 (en) * | 2008-10-15 | 2010-04-22 | 株式会社小糸製作所 | Light-emitting module, manufacturing method for light-emitting module, and light fixture unit |
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| CN101868865A (en) * | 2007-11-20 | 2010-10-20 | 皇家飞利浦电子股份有限公司 | Side emitting device with wavelength conversion |
| CN103390713A (en) * | 2013-07-19 | 2013-11-13 | 李刚 | Semi-conductor luminescent device provided with light reflection layer |
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