CN106328572B - Method for unloading wafer from silicon wafer after surface process - Google Patents
Method for unloading wafer from silicon wafer after surface process Download PDFInfo
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- CN106328572B CN106328572B CN201510383646.7A CN201510383646A CN106328572B CN 106328572 B CN106328572 B CN 106328572B CN 201510383646 A CN201510383646 A CN 201510383646A CN 106328572 B CN106328572 B CN 106328572B
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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Abstract
The invention discloses a method for unloading a wafer with a finished surface process from a silicon wafer, which comprises the following steps: providing a silicon wafer, wherein a wafer with a finished surface process is fixed on the surface of the silicon wafer; thinning one surface of the silicon chip far away from the wafer by using a thinning process, and taking down the wafer when the surface of the silicon chip far away from the wafer is thinned to expose the wafer; when the silicon chip is far away from one side of the wafer is thinned to a distance, when the wafer is left with a preset thickness, the thinned silicon chip is corroded by utilizing a corrosion process, the wafer is exposed, and the wafer is taken down. The method for unloading the wafer with the finished surface process from the silicon wafer provided by the embodiment of the invention can be used for unloading the wafer without influencing the appearance of the electrode on the surface of the wafer and forward voltage parameters and damaging the front chip pattern of the wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for unloading a wafer with a finished surface process from a silicon wafer.
Background
The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because it has a circular shape. Various circuit element structures can be processed and manufactured on the wafer to form an integrated circuit product with specific electrical functions. The size of the existing wafer is typically 2 inches (i.e., 5.08 cm in diameter) or 3 inches (i.e., 7.62 cm in diameter), and the size of the equipment used to process the wafer in the prior art is also 2 inches or 3 inches. When the wafer is processed on the equipment, the wafer can be processed only in a single-chip mode, so that the processing efficiency is low, and further the circulation capacity and the circulation efficiency of the wafer are low. In order to solve the problem, a plurality of wafers can be adhered to a large-size silicon wafer, the wafer is processed by using processing equipment of the silicon wafer, a plurality of wafers with finished surface processes can be obtained after one-time processing, and the processing efficiency is improved. After the wafer is processed, the wafer needs to be unloaded, so that the wafer with a single finished surface process is obtained.
The prior art mainly has two methods for unloading the slice: firstly, high-temperature wafer unloading, namely melting glue for adhering the wafer at high temperature, and carrying out wafer unloading operation on the wafer; and the second is etching and unloading, namely, after the front side of the wafer is protected, etching the silicon wafer by using an etching solution (generally a mixed solution of nitric acid, hydrofluoric acid and acetic acid), and unloading the wafer. When the wafer on the silicon wafer adhered with the wafer with the surface finished by the surface process is removed by using the wafer removing method in the prior art, the following problems occur because the process on the surface of the wafer is finished: when the high-temperature wafer unloading method is used for unloading wafers, the electrode morphology and the forward voltage parameters on the surface of the wafer are greatly influenced, so that the parameters of the wafer are unqualified, and the product is scrapped; when the wafer is unloaded by using the corrosion unloading method, even if the surface of the wafer is coated with photoresist or silicon dioxide which is commonly used in the semiconductor process, the pattern on the front surface of the wafer cannot be completely protected, and the pattern can be corroded and damaged.
Disclosure of Invention
The invention aims to provide a method for unloading a wafer with a finished surface process from a silicon wafer, which can solve the problems that the appearance of an electrode on the surface of the wafer and forward voltage parameters are influenced and the front side graph of the wafer is damaged when the wafer with the finished surface process is unloaded from the silicon wafer by using a unloading method in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of detaching a surface processed wafer from a silicon wafer, comprising:
providing a silicon wafer, wherein a wafer with a finished surface process is fixed on the surface of the silicon wafer;
thinning one surface of the silicon chip far away from the wafer by using a thinning process,
when the side, far away from the wafer, of the silicon chip is thinned to expose the wafer, the wafer is taken down;
when the silicon chip is far away from one side of the wafer is thinned to a distance, when the wafer is left with a preset thickness, the thinned silicon chip is corroded by utilizing a corrosion process, the wafer is exposed, and the wafer is taken down.
Further, when the surface, away from the wafer, of the silicon chip is thinned to expose the wafer, the thinned thickness of the wafer is not more than 100 microns.
Further, the predetermined thickness is not greater than 30 micrometers.
Further, after the wafer with the finished surface process is fixed on the surface of the silicon wafer, before the thinning of the surface of the silicon wafer far away from the wafer by using the thinning process, the method further comprises:
providing a carrying disc;
adhering one surface of the silicon wafer, on which the wafer is fixed, to the carrying disc;
and installing the carrying disc on a thinning machine.
Further, before the wafer is taken down, the method further includes:
and separating the wafer from the carrier disc.
Further, the adhering the surface of the silicon wafer, on which the wafer is fixed, to the carrying disc specifically includes:
heating the carrying disc;
coating paraffin on the carrying disc;
and contacting and adhering the surface of the silicon wafer, on which the wafer is fixed, with the surface of the carrying disc, on which the paraffin is coated.
Further, after the surface of the silicon wafer, on which the wafer is fixed, is contacted with the surface of the carrying disc, on which the paraffin is coated, and is adhered, the method further comprises the following steps:
and tabletting the silicon wafer.
Further, the wafer is separated from the carrier plate, specifically, the wafer is separated from the carrier plate through a heating process.
Further, after separating the wafer from the carrier disc, the method further comprises:
and removing the paraffin wax remained on the surface of the wafer.
Further, the removing of the paraffin wax remaining on the surface of the wafer specifically comprises:
and removing the paraffin wax remained on the surface of the wafer by using an acetone solution.
According to the method for detaching the wafer with the finished surface process from the silicon wafer, provided by the embodiment of the invention, the wafer is detached from the silicon wafer through the thinning process or the thinning process and the corrosion process, so that the influence on the surface electrode morphology and the forward voltage parameter of the wafer is not caused, and the chip graph on the front surface of the wafer is not damaged.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, a brief description is given below of the drawings used in describing the embodiments. It should be clear that the described figures are only views of some of the embodiments of the invention to be described, not all, and that for a person skilled in the art, other figures can be derived from these figures without inventive effort.
FIG. 1 is a flowchart illustrating a method for detaching a surface processed wafer from a silicon wafer according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a structure of a silicon wafer with a surface processed wafer fixed thereon according to a method for detaching the surface processed wafer from the silicon wafer in an embodiment of the present invention.
Fig. 3 is a cross-sectional view of a structure corresponding to a preset thickness remaining from the wafer after thinning the side of the silicon wafer far from the wafer by using a thinning process according to the step of the method for detaching the surface-processed wafer from the silicon wafer according to the embodiment of the present invention.
Fig. 4 is a cross-sectional view of a structure corresponding to the step of attaching the wafer-fixed side of the silicon wafer to the carrier plate according to the method for detaching the surface-processed wafer from the silicon wafer in the embodiment of the present invention.
Fig. 5 is a cross-sectional view of a structure corresponding to a step of applying paraffin wax on a carrier plate in a method for detaching a surface processed wafer from a silicon wafer according to an embodiment of the present invention.
Fig. 6 is a cross-sectional view of a structure corresponding to a step of mounting a carrier plate on a thinning machine for thinning according to a method for detaching a surface-processed wafer from a silicon wafer according to an embodiment of the present invention.
Fig. 7 is a cross-sectional view of a structure corresponding to a thinned silicon wafer that is etched by an etching process to expose the wafer in the step of the method for detaching a surface-processed wafer from the silicon wafer according to the embodiment of the present invention.
Fig. 8 is a cross-sectional view of a structure corresponding to a step of separating a wafer from a carrier plate in a method for detaching a surface-processed wafer from a silicon wafer according to an embodiment of the present invention.
Fig. 9 is a flowchart of a method for detaching a surface processed wafer from a silicon wafer according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be fully described by the detailed description with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
The first embodiment is as follows:
FIG. 1 is a flowchart illustrating a method for detaching a surface processed wafer from a silicon wafer according to an embodiment of the present invention. As shown in fig. 1, the method comprises the steps of:
and S11, providing a silicon wafer, wherein the surface of the silicon wafer is fixed with a wafer with a finished surface process.
As shown in fig. 2, the silicon chip 21 of the present embodiment is provided with at least one (only three shown) wafer positioning groove 24, and the wafer 22 is fixed in the wafer positioning groove 24.
And S12, thinning the side, far away from the wafer, of the silicon chip by using a thinning process until the side, far away from the wafer, of the silicon chip is thinned to a preset thickness left away from the wafer.
As shown in fig. 3, the thinned silicon wafer 21 has silicon 23 on the side away from the wafer 22. And removing the residual silicon on the side of the silicon chip far away from the wafer by a later etching process. In order to reduce the influence of the etching on the chip pattern on the front surface of the wafer, the etching time should be shortened as much as possible. Therefore, the thickness of the remaining silicon, i.e., the predetermined thickness, should be controlled within a minimum value range to avoid the influence of the etching on the wafer. Preferably, on the premise of ensuring that the thinning thickness of the silicon wafer 21 is easy to control, when the preset thickness is not more than 30 microns, the etching time of the wafer 22 can be effectively shortened, and the influence of the etching process on the front chip pattern of the wafer is avoided. The thinning can be performed on a thinning machine, and in order to make the thinning of the silicon wafer more easily controlled, after the step S11 and before the step S12, the method can further include the steps S111, S112 and S113:
and S111, providing a carrying disc.
The material of the carrying disc can be any material capable of fixing the silicon wafer on the thinning machine, such as ceramic or glass. The size of the carrying disc is preferably not smaller than that of the silicon wafer, so that the carrying disc can be ensured to completely cover the wafer on the silicon wafer after the silicon wafer is adhered on the carrying disc, and the wafer can be best protected through the carrying disc in the processes of thinning and later corrosion.
And S112, adhering the surface of the silicon chip, on which the wafer is fixed, to the carrying disc.
As shown in fig. 4, the silicon wafer 21 is attached to the carrier plate 25 by means of paraffin 26. The process of adhering the silicon wafer on the carrying disc through paraffin wax can comprise the following steps: heating the carrying disc; coating paraffin on the carrying disc; and contacting and adhering the surface of the silicon wafer, on which the wafer is fixed, with the surface of the carrying disc, on which the paraffin is coated.
In the step of heating the carrying disc, the carrying disc is placed on a heating table to heat the carrying disc, and the heating temperature can be 120 ℃.
In the step of coating paraffin on the boat, as shown in fig. 5, paraffin 26 is coated on the boat 25 during heating of the boat 25. Due to the high temperature of the loading disc, the paraffin coated on the loading disc is melted, so that the paraffin is uniformly coated on the loading disc.
In the step of contacting and adhering the surface of the silicon wafer, on which the wafer is fixed, with the surface of the carrying disc coated with paraffin, in the process of continuously heating the carrying disc coated with paraffin, the silicon wafer is placed on the carrying disc, the silicon wafer is adhered on the carrying disc through melted paraffin, and the adhered structure is as shown in fig. 4. After the silicon wafer is placed on the carrying disc, the carrying disc can be continuously heated for a period of time (which can be 1 minute), so that paraffin between the silicon wafer and the carrying disc is distributed more uniformly, and the uniformity of adhesion of the silicon wafer and the carrying disc is ensured. After the heating is stopped, the pressing processing can be carried out on the silicon wafer through the press welder to ensure the uniformity of pasting the silicon wafer and the loading disc, so that the silicon wafer and the loading disc are arranged in parallel, the uniformity of the thinned silicon wafer is ensured when the silicon wafer is thinned in the later stage, and the plane of the thinned silicon wafer is parallel to the plane of the loading disc.
And S113, mounting the carrying disc on a thinning machine.
In this step, the silicon wafer is mounted on a thinning machine by using the carrying disc as an intermediate medium, so that the silicon wafer is thinned by the thinning machine, and the thinned structure is as shown in fig. 6. During thinning, the thinning time can be calculated through the thinning rate of the thinning machine and the thickness of the silicon to be thinned, and the silicon is thinned by controlling the thinning time.
And S13, corroding the thinned silicon wafer by using a corrosion process to expose the wafer.
In this step, the etching process may be a wet etching process. The silicon chip after the attenuate is taken off from the attenuate machine, and the one side surplus silicon of keeping away from the wafer on the silicon chip corrodes in all soaking the etchant solution, and the etchant solution that uses can be the mixed solution of nitric acid, hydrofluoric acid and acetic acid, and the mass ratio of three can be 3: 2: 1. the etching time in this step is important, and the shorter the etching time is, the less the influence on the wafer is, on the premise of ensuring that the remaining silicon on the silicon wafer far away from the wafer is completely etched away. Therefore, etching to the point where the wafer is just exposed is a measure that can minimize the influence on the wafer while the wafer can be unloaded. In order to ensure the accuracy of the etching time, the etching time can be calculated according to the etching rate of the etching solution and the thickness of the residual silicon, and the minimum influence on the wafer can be realized by controlling the etching time. Since the silicon wafer is required to be thinned after the wafer is unloaded from the silicon wafer, the wafer can be etched into the wafer, and when the etched thickness of the wafer is not more than 100 microns, the wafer cannot be affected in the later processing. The etched structure is shown in fig. 7.
And S14, taking down the wafer.
If the silicon wafer is not bonded to the carrier plate for thinning before step S13, as shown in fig. 7, after thinning and etching, only the silicon 27 between the wafers remains, and the rest of the silicon is removed, at this time, the wafer and the remaining silicon are peeled off, and the wafer can be removed.
If the thinning is realized by adhering the silicon wafer on the carrying disc and then mounting the silicon wafer on the thinning machine before the step S13, the method further comprises the following steps after the step S13 and before the step S14:
s131, separating the wafer from the carrier disc.
In this step, the carrier tray can be separated by a heating process, that is: after etching, the silicon wafer with the wafer fixed thereon is placed on a heating stage and heated, which may be at 120 ℃. During heating, the paraffin will melt and the boat can be easily removed and separated as shown in figure 8. After the carrier plate is separated, the surface of the wafer may also have residual paraffin 27. In order to ensure the purity of the wafer, the method preferably further comprises the following steps after the carrier disc is separated out: and removing paraffin wax remained on the surface of the wafer. The acetone solution can be used for removing the paraffin wax remained on the surface of the wafer, namely: and after the carrying disc is separated, immersing the silicon wafer fixed with the wafer into an acetone solution to remove paraffin wax remained on the surface of the wafer. After paraffin removal, the wafer with the wafer mounted thereon is shown in fig. 7. In the etching process of step S12, if the wafer is etched until it is just exposed, the adhesive for fixing the wafer and the silicon wafer may remain on the back surface of the wafer, and the acetone in this case can remove the adhesive. Even if the acetone at the position can not completely remove the adhesive, the adhesive can be removed when the wafer is thinned in the later wafer processing process.
According to the method for detaching the surface-processed wafer from the silicon wafer, provided by the embodiment of the invention, after the silicon on the surface, far away from the wafer, of the silicon wafer is thinned through the thinning process, the silicon on the surface, far away from the wafer, of the silicon wafer is removed through the corrosion process, and the wafer is detached from the silicon wafer. Because the thickness of the residual silicon after the thinning process is smaller, the etching time in the subsequent etching process can be effectively shortened. Therefore, the influence on the surface electrode morphology and the forward voltage parameter of the wafer can not be caused, and the chip pattern on the front surface of the wafer can not be damaged.
Example two:
fig. 9 is a flowchart of a method for detaching a surface processed wafer from a silicon wafer according to a second embodiment of the present invention. As shown in fig. 9, compared with the method for detaching the surface processed wafer from the silicon wafer according to the first embodiment of the present invention, the method only uses the thinning process to thin the silicon on the surface of the silicon wafer, which is fixed with the surface processed wafer, away from the wafer, and directly thins the silicon until the wafer is exposed. At the moment, because the silicon on the side of the silicon wafer far away from the wafer is completely removed due to the fact that the silicon is thinned to expose the wafer, the silicon on the side of the silicon wafer far away from the wafer is not required to be removed through an etching process. Because no corrosion process is needed, the influence of corrosion on the wafer can be completely avoided.
Compared with the method for detaching the wafer with the finished surface process from the silicon wafer provided by the first embodiment of the invention, the method for detaching the wafer with the finished surface process from the silicon wafer provided by the second embodiment of the invention thins the silicon on the surface, far away from the wafer, of the silicon wafer through the thinning process until the wafer is exposed, and then the wafer can be detached from the silicon wafer. Because the etching process is not needed, the influence on the surface electrode appearance and the forward voltage parameter of the wafer is avoided, the chip pattern on the front surface of the wafer is not damaged, and the cost can be effectively reduced.
The foregoing is considered as illustrative of the preferred embodiments of the invention and technical principles employed. The present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in more detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the claims.
Claims (7)
1. A method for detaching a surface processed wafer from a silicon wafer, comprising:
providing a silicon wafer, wherein a wafer with a finished surface process is fixed on the surface of the silicon wafer, and specifically, at least one wafer positioning groove is formed in the silicon wafer, and the wafer is fixed in the wafer positioning groove;
thinning one surface of the silicon chip far away from the wafer by using a thinning process,
when the side, far away from the wafer, of the silicon chip is thinned to expose the wafer, the wafer is taken down;
when the side, far away from the wafer, of the silicon chip is thinned to a position far away from the wafer and a preset thickness is remained, the thinned silicon chip is corroded by a corrosion process to expose the wafer, and the wafer is taken down;
after the surface of the silicon chip is fixed with the wafer which has finished the surface process, the thinning process is utilized to thin the surface of the silicon chip far away from the wafer, and the method further comprises the following steps:
providing a carrying disc;
adhering one surface of the silicon wafer, on which the wafer is fixed, to the carrying disc;
mounting the carrying disc on a thinning machine;
the method is characterized in that one surface of the silicon wafer, which is fixed with the wafer, is pasted on the carrying disc, and the method specifically comprises the following steps:
heating the carrying disc;
coating paraffin on the carrying disc;
contacting and sticking one surface of the silicon wafer, on which the wafer is fixed, with one surface of the carrying disc, on which paraffin is coated;
after the one side that will be fixed with the wafer of silicon chip with the one side that the year dish scribbled paraffin contacts and pastes, still include:
carrying out tabletting treatment on the silicon wafer;
the method comprises the steps that one surface, fixed with a wafer, of a silicon wafer is contacted with one surface, coated with paraffin, of a carrying disc and is adhered, the silicon wafer is placed on the carrying disc in the process of continuously heating the carrying disc coated with the paraffin, the silicon wafer is adhered to the carrying disc through melted paraffin, and after the silicon wafer is placed on the carrying disc, the carrying disc is continuously heated for preset time.
2. The method of claim 1, wherein when the side of the silicon wafer remote from the wafer is thinned to expose the wafer, the wafer is thinned to a thickness of no more than 100 microns.
3. The method of claim 1, wherein the predetermined thickness is no greater than 30 microns.
4. The method of claim 1, wherein prior to said removing said wafer, further comprising:
and separating the wafer from the carrier disc.
5. The method as claimed in claim 4, characterized in that the separation of the wafer from the carrier disc is carried out by a heating process.
6. The method of claim 4, further comprising, after separating the wafer from the blade:
and removing the paraffin wax remained on the surface of the wafer.
7. The method as claimed in claim 6, wherein the removing of the paraffin wax remaining on the surface of the wafer is specifically:
and removing the paraffin wax remained on the surface of the wafer by using an acetone solution.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044428A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| CN103050392A (en) * | 2013-01-10 | 2013-04-17 | 武汉电信器件有限公司 | Grinding polishing method for wafer |
| CN104733385A (en) * | 2013-12-19 | 2015-06-24 | 株式会社迪思科 | Device Wafer Processing Method |
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| US9202753B2 (en) * | 2013-01-30 | 2015-12-01 | Infineon Technologies Ag | Semiconductor devices and methods of producing these |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044428A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| CN103050392A (en) * | 2013-01-10 | 2013-04-17 | 武汉电信器件有限公司 | Grinding polishing method for wafer |
| CN104733385A (en) * | 2013-12-19 | 2015-06-24 | 株式会社迪思科 | Device Wafer Processing Method |
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