CN106328567A - Etching device - Google Patents
Etching device Download PDFInfo
- Publication number
- CN106328567A CN106328567A CN201610914198.3A CN201610914198A CN106328567A CN 106328567 A CN106328567 A CN 106328567A CN 201610914198 A CN201610914198 A CN 201610914198A CN 106328567 A CN106328567 A CN 106328567A
- Authority
- CN
- China
- Prior art keywords
- etching
- heater
- edge
- generating units
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
The invention relates to the field of semiconductor yield improvement, in particular to an etching device which comprises a rotary etching machine stand and at least one heating device. A cavity of the rotary etching machine stand is used for fixing and etching wafers, each heating device is arranged at the edge of the cavity of the rotary etching machine stand, and all the heating devices are used for heating the edge of the cavity to increase the edge etching rate of the wafers during wafer etching and optimize etching uniformity of the etching process, so that final product yield is improved.
Description
Technical field
The present invention relates to semiconductor yields and promote field, particularly relate to a kind of etching device.
Background technology
In the flow process of rotation etching board etching, owing to needs wafer is in high speed rotating state so that chemical liquids exists
Rotary centrifugal force near crystal circle center is minimum and maximum at the rotary centrifugal force of crystal round fringes, thus results in chemical liquids at wafer
The edge time of staying is short, and wafer edge etching rate is low, and rotation etching board often uses chemical liquids acid spraying tube road from wafer simultaneously
Overcentre carries out spray acid, pipeline cannot arrive wafer edge (maximum moving distance be wafer radius 90% to prevent chemistry
Liquid stream is on wafer rear or chuck) so that final product wafer etching is uneven.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of etching device, including:
Rotation etching board, including a cavity, described cavity is used for fixing and etching wafer；
At least one heater, is respectively arranged at the edge of the described cavity of described rotation etching board；
The edge of described cavity is heated by all described heaters, with etch described wafer time improve described rotate carve
The erosion board etching rate to the edge of described wafer.
Above-mentioned etching device, wherein, the edge of described cavity is heated by all described heaters, with by described
The temperature at the edge of cavity promotes 0 ~ 3 DEG C.
Above-mentioned etching device, wherein, each described heater has at least two temperature grade that can mutually switch；
Each described heater includes respectively:
At least one heat-generating units, for heating described rotation etching machine edge of table；
Control unit, connects each described heat-generating units respectively, controls for the duty by controlling described heat-generating units
Make described heater to switch between different described temperature grade, with for selection on described rotation etching board
Different etching liquids carries out the temperature-compensating of correspondence.
Above-mentioned etching device, wherein, includes multiple described heat-generating units respectively in each described heater；
Each described heat-generating units is respectively heater strip；
Described control unit controls the opening and closing of each described heat-generating units respectively to control described heater described in different
Switch between temperature grade.
Above-mentioned etching device, wherein, includes a described heat-generating units respectively in each described heater；
Described heat-generating units is heating tape；
Described control unit controls the heating temp of described heat-generating units and controls described heater in different described temperature
Switch between grade.
Above-mentioned etching device, wherein, is respectively provided with two described heaters, described in two in the edge of described cavity
The position of heater is symmetrical.
Above-mentioned etching device, wherein, is uniformly distributed multiple described heater in the edge of described cavity.
Above-mentioned etching device, wherein, the described control unit of all described heaters is integrated in a controller.
Beneficial effect: a kind of rotation etching board that the present invention proposes can carry out temperature-compensating to the edge of wafer, with
The etching uniformity of etching flow process is optimized, thus improves final product yield.
Accompanying drawing explanation
Fig. 1 is the structural representation of etching device in one embodiment of the invention；
Fig. 2 is the thickness profile data figure of each etching point in the wafer after etching in one embodiment of the invention；
Fig. 3 is the graph of relation of the radius of etching rate speed and wafer in one embodiment of the invention.
Detailed description of the invention
With embodiment, the present invention is further described below in conjunction with the accompanying drawings.
In a preferred embodiment, as shown in Figure 1, it is proposed that a kind of etching device, may include that
Rotation etching board 20, can include a cavity (not marking in accompanying drawing), and cavity may be used for fixing and etching wafer 10；
At least one heater 30, can be respectively arranged at the edge of cavity；
The edge of cavity can be heated by all heaters 30, to improve rotation etching board 20 when etching wafer 10
Etching rate to the edge of wafer.
Wherein, the conduit 40 at wafer 10 top for being sprayed at wafer 10 by etching liquid.
Specifically, multiple wafers 10 can be entered successively by the selection to the heating-up temperature of heater 30 by many experiments
The identical etching operation of row obtains, by thick apart from the etching of identical fixing etching point or sample point to each distance wafer center of circle
Degrees of data carries out taking averaging operation, as it is shown on figure 3, can average the average of multiple wafers of many experiments as plan again
Close the sample point of curve；Etch rate can by the Thickness Analysis of the wafer after final etching out, and thickness is the biggest, etches
Speed is the lowest；But above-mentioned scheme simply a kind of preferably situation, other can the etching speed of each etching point on matching wafer
Rate is regarded as being included in the present invention with the computational methods of etching point to the gradient relation of the distance of crystal circle center.
In a preferred embodiment, the edge of cavity can be heated by all heaters, with by cavity
The temperature at edge promotes 0 ~ 3 DEG C, can be according to the dispersion degree of the thickness of each etching point on wafer to this temperature in actual production
Degree lifting is adjusted.
In above-described embodiment, it is preferable that each heater can have at least two temperature grade that can mutually switch；
Each heater can include respectively:
At least one heat-generating units, for heating rotation etching machine edge of table；
Control unit, can connect each heat-generating units respectively, may be used for being controlled by the duty controlling heat-generating units
Refrigerating/heating apparatus switches between different temperature grade, with for the different etching liquid selected on rotation etching board
Carry out the temperature-compensating of correspondence.
In above-described embodiment, it is preferable that each heater can include multiple heat-generating units respectively；
Each heat-generating units can be respectively heater strip (can be heater strip 31 as shown in Figure 1)；
Control unit can control the opening and closing of each heat-generating units respectively to control heater between different temperature grade
Switch over.
In the case of and specifically, it is preferable to, the quantity can opened by controlling heater strip controls heating-up temperature, such as opens
Heating and temperature control is being improved 2 DEG C by two in three heater strips (or heating plate)；Different heating levels can be corresponding
In different heating-up temperatures, to meet the requirement to temperature of the different etching liquids.
Wherein, the data pattern of the thickness that scanning wafer obtains each etching point can be as in figure 2 it is shown, reflect in this figure
The one-tenth-value thickness 1/10 of edge, higher than the thickness of the etching point of immediate vicinity, therefore can be analyzed in showing that the etch rate of edge is less than
Heart part.
In above-described embodiment, it is preferable that each heater can include a heat-generating units respectively；
Heat-generating units is heating tape；
The heating temp of control unit control heat-generating units controls heater and switches between different temperature grade.
In a preferred embodiment, can be respectively provided with two heaters in the edge of cavity, two add hot charging
The position put is symmetrical.
In a preferred embodiment, multiple heater can be uniformly distributed in the edge of cavity.
The arrangement mode of above-mentioned heater is as just preferred situation, and other are every is capable of rotation etching
The temperature of machine edge of table raises and is regarded as bag with raising wafer in the arrangement of the heater of the etching rate of edge
It is contained in the present invention.
In above-described embodiment, it is preferable that the control unit of all heaters is integrated in a controller.
In sum, a kind of etching device that the present invention proposes, including rotation etching board and at least one heater,
The cavity of rotation etching board is used for fixing and etching wafer, and each heater is respectively arranged at the edge of cavity, all adds
The edge of cavity is heated to improve the etching rate at the edge to wafer when etching wafer by thermal, with to etching flow process
The etching uniformity be optimized, thus improve final product yield.
By explanation and accompanying drawing, give the exemplary embodiments of the ad hoc structure of detailed description of the invention, based on present invention essence
God, also can make other conversion.Although foregoing invention proposes existing preferred embodiment, but, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications will be apparent to undoubtedly.
Therefore, appending claims should regard whole variations and modifications of true intention and the scope containing the present invention as.In power
The scope of any and all equivalence and content in the range of profit claim, be all considered as still belonging to the intent and scope of the invention.
Claims (8)
1. an etching device, it is characterised in that including:
Rotation etching board, including a cavity, described cavity is used for fixing and etching wafer；
At least one heater, is respectively arranged at the edge of the described cavity of described rotation etching board；
The edge of described cavity is heated by all described heaters, with etch described wafer time improve described rotate carve
The erosion board etching rate to the edge of described wafer.
Etching device the most according to claim 1, it is characterised in that all described heaters edge to described cavity
Heat, so that the temperature at the edge of described cavity is promoted 0 ~ 3 DEG C.
Etching device the most according to claim 2, it is characterised in that each described heater has and can mutually switch
At least two temperature grade；
Each described heater includes respectively:
At least one heat-generating units, for heating described rotation etching machine edge of table；
Control unit, connects each described heat-generating units respectively, controls for the duty by controlling described heat-generating units
Make described heater to switch between different described temperature grade, with for selection on described rotation etching board
Different etching liquids carries out the temperature-compensating of correspondence.
Etching device the most according to claim 3, it is characterised in that include multiple institute in each described heater respectively
State heat-generating units；
Each described heat-generating units is respectively heater strip；
Described control unit controls the opening and closing of each described heat-generating units respectively to control described heater described in different
Switch between temperature grade.
Etching device the most according to claim 3, it is characterised in that include an institute in each described heater respectively
State heat-generating units；
Described heat-generating units is heating tape；
Described control unit controls the heating temp of described heat-generating units and controls described heater in different described temperature
Switch between grade.
Etching device the most according to claim 1, it is characterised in that be respectively provided with described in two in the edge of described cavity
Heater, the position of two described heaters is symmetrical.
Etching device the most according to claim 1, it is characterised in that be uniformly distributed multiple described in the edge of described cavity
Heater.
Etching device the most according to claim 3, it is characterised in that the described control unit collection of all described heaters
In Cheng Yuyi controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610914198.3A CN106328567A (en) | 2016-10-20 | 2016-10-20 | Etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610914198.3A CN106328567A (en) | 2016-10-20 | 2016-10-20 | Etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328567A true CN106328567A (en) | 2017-01-11 |
Family
ID=57818977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610914198.3A Pending CN106328567A (en) | 2016-10-20 | 2016-10-20 | Etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328567A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070231716A1 (en) * | 2001-04-24 | 2007-10-04 | Samsung Electronics Co., Ltd | Plasma etching chamber and method for manufacturing photomask using the same |
| CN101921987A (en) * | 2009-06-10 | 2010-12-22 | 鸿富锦精密工业（深圳）有限公司 | Film sputtering and coating device |
| CN104051306A (en) * | 2013-03-15 | 2014-09-17 | 大日本网屏制造株式会社 | Substrate processing apparatus and substrate processing method |
-
2016
- 2016-10-20 CN CN201610914198.3A patent/CN106328567A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070231716A1 (en) * | 2001-04-24 | 2007-10-04 | Samsung Electronics Co., Ltd | Plasma etching chamber and method for manufacturing photomask using the same |
| CN101921987A (en) * | 2009-06-10 | 2010-12-22 | 鸿富锦精密工业（深圳）有限公司 | Film sputtering and coating device |
| CN104051306A (en) * | 2013-03-15 | 2014-09-17 | 大日本网屏制造株式会社 | Substrate processing apparatus and substrate processing method |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170111 |
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| RJ01 | Rejection of invention patent application after publication |