CN106319460A - PVD equipment for metal thin film sputtering and process - Google Patents
PVD equipment for metal thin film sputtering and process Download PDFInfo
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- CN106319460A CN106319460A CN201510375208.6A CN201510375208A CN106319460A CN 106319460 A CN106319460 A CN 106319460A CN 201510375208 A CN201510375208 A CN 201510375208A CN 106319460 A CN106319460 A CN 106319460A
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Abstract
The invention provides PVD equipment for metal thin film sputtering and a process. The equipment comprises a target, a substrate and a side coil which are connected to a radio frequency power supply, wherein the target can be mounted in the top of a sputtering cavity in a rotatable form, the substrate is located in the bottom of the sputtering cavity, the side coil is located on the side wall of the sputtering cavity, and the target and the side coil apply the radio frequency power supply to jointly act on inert gas so as to generate plasma. As the equipment is additionally provided with the side coil and the radio frequency power supply connected thereto, the plasma density is improved by adjusting the pressure of the inert gas; a thin film which is good in electric property and in surface covering effect of a groove can be formed by combining other process parameters of PVD sputtering; a sustainable sputtering deposition process can be applied to a back gate process of technologies of 22 nanometers and below.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the PVD equipment sputtered particularly to a kind of metallic film
And technique.
Background technology
In Guo Qujishinian, integrated circuit technique obtains the development advanced by leaps and bounds, and critical size is 22 nanometers
And techniques below is the direction of semiconductor integrated circuit technology development.The grid of rear grid technique need not hold
By the high annealing of about 1000 DEG C, the structure boost device performance of high-k dielectric layer/metal gate can be used,
It it is considered as the direction of prevailing technology development.Physical vapour deposition (PVD) (Physical Vapor Deposition,
PVD) sputtering method deposition thin film is to obtain important method in integrated circuit preparation process, but PVD sputtering
Method is prepared the Step Coverage effect of thin film and is had much room for improvement.
Rear grid technique relates to the problem of metal work function layer deposition, metallic film mesh after false grid are removed
Before be the metal work function regulating course of the more commonly used nMOSFET, the groove that false grid are formed after removing,
There is the characteristic that depth-to-width ratio is big, form the requirement of good covering in order to meet metallic film in flute surfaces,
Ald (Atomic layer deposition, ALD) method is generally used to prepare metal foil
Film, but the metallic film that ALD method the most difficult acquisition combination property is good.A kind of possible method is
Using PVD sputtering method to prepare metal work function layer, PVD sputtering method can obtain the gold that electric property is good
Genus thin film, but thin films step coverage rate prepared by the PVD equipment of existing metallic film sputtering and technique
Poor, it is difficult to during meeting transistor fabrication, that false grid are formed after removing flute surfaces deposition metal
The technological requirement of work-function layer.
Summary of the invention
The invention provides PVD equipment and the technique of a kind of metallic film sputtering, to solve existing thin film
It is good that preparation method is difficult to prepare electric property, and can form the metal of good covering in flute surfaces
The problem of thin film.
The invention provides the PVD equipment of a kind of metallic film sputtering, including:
Target, pedestal and the side coil being connected with radio-frequency power supply, described target is with can the shape of rotation
Formula is arranged on the top of sputtering chamber, and described pedestal is positioned at the bottom of sputtering chamber, described side coil
Being positioned at the sidewall of sputtering chamber, target and side coil apply radio-frequency power supply and jointly act on noble gas,
Produce plasma.
Preferably, described target is TiAl alloy target.
Preferably, the material of described side coil is identical with the material of sputtering target material.
Preferably, the material of described side coil and sputtering target material be following any one: identical metal
Simple substance, identical alloying component, identical percentage composition.
Preferably, described equipment also includes: be connected with sputtering chamber preheats chamber.
A kind of PVD of metallic film sputtering, be applied to target and side coil radio-frequency power and
/ or rf frequency difference, the substrate with groove structure is carried out the PVD sputtering technology of TiAl alloy,
Wherein:
Sputtering chamber pressure limit is 10～80mTorr；
Inert gas flow weight range is 30～100sccm；
Substrate temperature range is 16～26 DEG C；
Target material surface radio frequency power range is 500W～1000W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 2～100W, and frequency is 13.56MHz；
Side coil RF power bracket is 10～200W, and frequency is 2MHz.
Preferably, described noble gas is Ar gas.
Preferably, described the substrate with groove structure is carried out PVD sputtering technology before, also include:
Substrate is carried out heating technique, and heating temperature range is 150～250 DEG C, and heat time heating time is
30～120S.
Preferably, described PVD condition is:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow scope is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 10W, and frequency is 13.56MHz；
Side coil RF power bracket is 100W, and frequency is 2MHz.
The invention provides PVD equipment and the technique of metallic film sputtering, owing to this equipment adds side
Coil and coupled radio-frequency power supply, and by regulation inert gas pressure, improve plasma
Density, in conjunction with other technological parameters of PVD sputtering, can be formed and meet the mutually powered-down of nMOS metal gate
Performance, and there is the thin film of good coverage effect in flute surfaces, sputter deposition craft can be continued
It is applied in the rear grid technique of 22 nanometers and techniques below.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to enforcement
In example, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only
Some embodiments described in the present invention, for those of ordinary skill in the art, it is also possible to according to these
Accompanying drawing obtains other accompanying drawing.
Fig. 1 is the cross section structure schematic diagram forming fluted substrate after false grid are removed；
Fig. 2 is the cross section structure schematic diagram of the metallic film using the technique of the embodiment of the present invention to prepare；
Fig. 3 is the sputtering equipment structural representation according to the embodiment of the present invention；
Fig. 4 is the transmitted electron of the TiAl alloy film sections using the technique of the embodiment of the present invention to prepare
Microscope (TEM) figure；
Fig. 5 is scanning radio in the cross section of the TiAl alloy thin film using the technique of prior art to prepare
Microscope (SEM) figure；
Fig. 6 is scanning radio in the cross section of the TiAl alloy thin film using the technique of prior art to prepare
The partial enlarged drawing of microscope (SEM) figure.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, its
In the most same or similar label represent same or similar element or there is same or like merit
The element of energy.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining this
Bright, and be not construed as limiting the claims.
Additionally, the present invention can in different examples repeat reference numerals and/or letter.This repetition is
For purposes of simplicity and clarity, between itself not indicating discussed various embodiment and/or arranging
Relation.Additionally, the various specific technique that the invention provides and the example of material, but this area
Those of ordinary skill is it can be appreciated that the property of can be applicable to of other techniques and/or the use of other materials.Separately
Outward, fisrt feature described below second feature it " on " structure can include that first and second is special
Levy the embodiment being formed as directly contacting, it is also possible to include that other feature is formed at first and second special
Embodiment between levying, such first and second features are not likely to be directly contact.
Rear grid technique, i.e. gate replacement technique, the grid of device is formed after source-drain area generates,
In this technique, grid need not bear the highest annealing temperature, and the impact on gate oxide is less,
After device size constantly reduces, after increasing employing, grid technique forms high performance device, including
The three-dimensional device such as traditional planar device and fin formula field effect transistor etc..
In rear grid technique, first, form false grid and source-drain area, then, vacation grid are removed, shape
Become groove, then, re-form grid in the trench, in the technique of metal gate, need at groove
Middle formation metallic film is as metal work function layer, generally using TiAl alloy thin film as metal work function
Layer, this metal work function layer needs have high step coverage rate and good electric property simultaneously,
To improve the performance of device.
The invention provides PVD equipment and the technique of a kind of metallic film sputtering, this equipment is by newly-increased
The side coil added, to improve plasma density, coordinates the TiAl alloy thin film sputtering that the present invention provides
PVD, electric property can be prepared good, and the groove of high-aspect-ratio is had good coverage rate
Metal work function layer, below with reference to specific embodiment, this process is described in detail.
This technique is to carry out PVD sputtering technology on the substrate have groove structure, and this groove is by removing
Formed after false grid, can be the groove of formation after the false grid of planar device or three-dimensional device are removed.
In the present embodiment, it is after formation groove, to carry out this PVD sputtering technology on planar device,
Concrete, following steps form groove:
First, it is provided that substrate 100, described substrate 100 is Semiconductor substrate, can be Si substrate, Ge
Substrate, SiGe substrate, SOI (silicon-on-insulator, Silicon On Insulator) or GOI are (on insulator
Germanium, Germanium On Insulator) etc..In other embodiments, described Semiconductor substrate can also be
Including other elemental semiconductors or the substrate of compound semiconductor, such as GaAs, InP or SiC etc.,
Can also be laminated construction, such as Si/SiGe etc., it is also possible to for other epitaxial structures, such as SGOI
(silicon germanium on insulator) etc..In the present embodiment, described substrate 100 is body silicon substrate, and serves as a contrast
Isolation 101 and groove 102 it is formed with, with reference to shown in Fig. 1 at the end 100.
Described isolation 101 is used for separating device, can be silicon oxide in the present embodiment.
First, perform etching on a semiconductor substrate 100, to form isolation channel；Specifically may include that
Deposited nitride film (not shown) stops as mask layer and cmp (CMP)
Layer；Then it is carried out photoetching process, the position of definition isolation channel；Then dry etching can be used
Body silicon substrate is carried out isolation channel etching, to form isolation channel.
Then, isolation channel oxide filling is carried out；Specifically can deposit (CVD) by chemical gaseous phase
Method deposition SiO2, to complete the filling to isolation channel.
Then, carry out CMP and remove unnecessary packed layer, to form isolation 101；Such as, pass through
CMP removes unnecessary packed layer, and stops on CMP stop layer nitride film, then
Remove nitride film.
Then, the false gate oxide of deposition and polysilicon layer (not shown)；Such as, one is first deposited
Layer SiO2, as gate oxide, then by low pressure chemical vapor deposition equipment deposit polycrystalline silicon layer.
Then, gate oxide and polysilicon layer are performed etching, to form false grid (not shown)；
Such as, by the position of the false grid of photoetching process definition, then dry etch process is used to remove unnecessary
False gate layer and gate oxide.
Then, ion implanting is carried out to form source electrode and drain electrode；Such as, N-shaped and p-type are first carried out
Lightly doped drain injects, and then by deposition SiO2 and carry out dry etching to form side wall, then carries out
N+ type and p+ type source/drain heavy doping, to form source electrode and drain electrode.
Then, formation of deposits interlayer dielectric layer (ILD) 103 on the substrate 100；For example, it is possible to make
Unadulterated silicon oxide (SiO is deposited by methods such as CVD, PVD2), doping silicon oxide (such as boron
Silica glass, boron-phosphorosilicate glass etc.) and silicon nitride (Si3N4) or other low k dielectric materials etc., and lead to
Cross CMP to planarize, form described interlayer dielectric layer 103.
Then, false grid and false gate oxide are removed, to form groove 102.
The most formed the embodiment of the present invention is formed with isolation 101 and the substrate 100 of groove 102,
As shown in Figure 1.
After forming groove 102, it is subsequently formed interface oxide layer 204, high-K medium film 205
And metal diffusion barrier layer 206, as shown in Figure 2.It is initially formed interface oxide layer 204, generally adopts
Use O3Oxidation formed, then deposition high-K medium film 205, high K medium film 6 as gate dielectric layer,
Can be the HfO deposited by ALD2Thin film, then deposition metal barrier layer film 206 are logical
Frequently with ALD deposition TiAlN thin film as metal diffusion barrier layer.
Then, the sputtering technology deposition metal work function layer 207 of PVD is carried out.
In actual applications, metal work function layer 207 is typically formed metal/semiconductor Ohmic contact,
Can its constituent be the important factor in order that form Ohmic contact.Conventional metal work function layer bag
Include following one or more and lamination thereof: Al, Ti, Ta, TiSi2Alloy, Si3Ta5Alloy, AuGe
Alloy, AuBe alloy etc..The TiAl that after the present embodiment, grid nMOSFET work-function layer is conventional closes
As a example by gold thin film, illustrative to the present invention.
In this embodiment, the sputtering technology depositing Ti Al thin film of PVD, the equipment used are carried out
As it is shown on figure 3, in the device, including sputtering chamber 8, it is positioned at the pedestal bottom sputtering chamber 8
11 and coupled pedestal biasing radio-frequency power supply, for carrying for the substrate 100 on pedestal 11
For bias；With can the form of rotation be arranged on sputtering chamber 8 top TiAl target 10 and with its phase
The target radio-frequency power supply connected；And, gas flowmeter 9 is used for regulating inert gas pressure, vacuum
The magnetron sputtering apparatus common components such as pump, additionally, in order to strengthen TiAl target 10 surface and sputtering chamber
Room 8 plasma concentration, to reach to improve the purpose of PVD sputtering stepped surfaces coverage rate, this
The sputtering equipment of bright offer also adds side coil 12 and coupled at the sidewall of sputtering chamber 8
Side coil RF power supply, as shown in Figure 3.Wherein, TiAl target 10 is executed with side coil 12
Add radio-frequency power supply and jointly act on noble gas, produce plasma；The material of described side coil 12
Can be identical with the material of TiAl target 10, in the present embodiment, described side coil 12 can be
TiAl coil, to ensure the purity of depositing Ti Al thin film, further, described side coil 12
TiAl component can be same or like with the component of TiAl target 10, and percentage composition can also be identical
Or close, further, it is also possible to depending on according to the design requirement of equipment, the resistivity of such as TiAl coil
Deng.Certainly, the sputtering equipment of the PVD that the present invention provides also includes that the sputtering such as vacuum pump, film thickness gauge sets
Standby common components, numerous to list herein.
Accordingly, in this embodiment, the technique carrying out the sputtering technology depositing Ti Al thin film of PVD
As follows:
Sputtering chamber pressure limit is 10～80mTorr；
Inert gas flow weight range is 30～100sccm；
Substrate temperature range is 16～26 DEG C；
Target material surface radio frequency power range is 500W～1000W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 2～100W, and frequency is 13.56MHz；
Side coil RF power bracket is 10～200W, and frequency is 2MHz.
Wherein, described noble gas is Ar gas, under radio-frequency power effect, forms Ar plasma,
The surface of sputtering target material 10 is bombarded so that sputtering target material 10 surface former under the orientation of electric field is accelerated
Son or atom leave sputtering target material 10, and deposit on the substrate 100.
Further, in this embodiment, described sputtering technology is rf magnetron sputtering technique, is protecting
In the case of card sputtering target material 10 voltage is smaller, sputtering target material 10 surface plasma can be significantly improved
The concentration of body, and then improve the thin film the deposited coverage rate on groove 102 surface.
It should be noted that the equipment that the present embodiment uses provides side coil 12 to produce side line
Circle radio-frequency power, and, it is applied to target 10 and the radio-frequency power of side coil 12 and/or radio frequency frequency
Rate is different, in the case of ensureing that the voltage of sputtering target material 10 is less, can be carried by side coil 12
The radio-frequency power of confession increases plasma density in sputtering chamber 8, improves PVD sputtering ledge surface and covers
Lid rate.
Further, before carrying out TiAl alloy thin film sputtering process, can first carry out heater skill,
The volatizable material of place to go crystal column surface remaining, improves the TiAl alloy thin film of deposition and front layer film
Adhesion.Concrete, the body silicon substrate 100 with groove 102 structure can be put into preheater
Room (not shown), and it is heated, heating technique can be: 180 DEG C, 90S.
In a specific embodiment, it is sent to preheat chamber by substrate 100 to be deposited, carries out
180 DEG C, 90S heating technique, be then sent to fine vacuum sputtering chamber 8 by substrate 100 to be deposited,
Carry out PVD sputtering technology, use following process conditions:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow scope is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 10W, and frequency is 13.56MHz；
Side coil RF power bracket is 100W, and frequency is 2MHz.
Use the technological parameter in the preferred embodiment, prepare and there is the covering of good groove 102 surface
The TiAl alloy thin film of effect, with reference to shown in Fig. 4, Fig. 4 is the technique system using the embodiment of the present invention
The TEM figure of standby TiAl alloy film sections, wherein, TiAl alloy thin film is provided by the present invention
PVD equipment and technique prepare on substrate 100 surface, as metal work function layer 207.Permissible
Seeing, TiAl alloy thin film is good at the groove 102 surface coverage effect with high-aspect-ratio.Due to
The PVD equipment that the present invention provides have employed side coil, and in improving sputtering chamber 8, plasma is dense
Degree, coordinates the corresponding technological parameter optimizing PVD so that the TiAl alloy thin film prepared is at ditch
The sidewall of groove 102 and bottom all have good coverage effect, also have the advantage that simultaneously and have
Deposit and keep the ability of complex alloys stock blend, can stain by removing crystal column surface before deposit metal
Oxide layer etc. with itself so that the metallic film prepared according to PVD sputtering method, especially alloy
Thin film, possesses more preferable electric property than the metallic film prepared by ALD method.
It should be noted that the PVD sputtering technology that the present embodiment is given is applicable to TiAl alloy thin film
Preparation, other need thin film prepared by PVD method, such as: metallic film, dielectric film etc. all may be used
It is prepared with the PVD equipment using the present invention to provide, but corresponding PVD needs according to reality
Thin film kind and particular/special requirement prepared by border are adjusted, to prepare required thin film.The present embodiment
The corresponding PVD of TiAl alloy thin film cited by is only exemplary, is not to the present invention
The restriction made.
Compared with prior art, the TiAl that the equipment provided according to embodiments of the present invention and technique are prepared
Alloy firm not only possesses excellent electric property, and such as, the alloy compositions of thin film stably makes thin film
The resistivity concordance of different piece is high；And there is the feature of good coverage effect in flute surfaces.
Fig. 5 is that electron microscopic is penetrated in the scanning in the cross section of the TiAl alloy thin film using the technique of prior art to prepare
Mirror (SEM) figure, wherein, prepared by the PVD sputtering method that TiAl alloy thin film is provided by prior art
On substrate 100 surface, as metal work function layer 207.It will be seen that by prior art system
Standby TiAl alloy thin film at the certain thickness TiAl alloy thin film of deposited atop of high spot, and
It is hardly visible TiAl on the sidewall of the groove 102 of high-aspect-ratio and adds up to thin film.Fig. 6 is existing for using
Ultramicroscope (SEM) figure is penetrated in the scanning in the cross section of TiAl alloy thin film prepared by the technique of technology
Partial enlarged drawing, it can be seen that the TiAl alloy thin film prepared by prior art, not only advanced wide
On the sidewall of the groove 102 of ratio almost without cover TiAl alloy thin film, the bottom of groove 102 also without
Method tells whether be coated with TiAl alloy thin film.Along with the reduction of device feature size, false gate groove
Depth-to-width ratio increasing, TiAl alloy thin film prepared by prior art can not meet device performance
And the requirement of manufacturing process.
By comparison diagram 4 to Fig. 6, it is known that the metallic film sputtering provided according to the present invention
The TiAl alloy thin film that PVD equipment and technique are prepared, at the table of the groove 102 with high-aspect-ratio
Face coverage rate is substantially better than prior art.
The device using TiAl alloy thin film as metal work function layer 207 prepared according to the present embodiment
WAT test tables of data, as shown in Table 1:
In table one the present embodiment, the WAT of the device of preparation tests tables of data
Wherein, described device is 22nm MOS device, and the test condition of Vtlin is Vd=0.05v,
Vb=Vs=GND, Vg scan 1.3V from-0.3V, and each spacing is 50mV, as Id=0.1 μ A (W/L)
Time, the Vg=Vt obtained；The test condition of Vtsat is: Vd=1V, Vb=Vs=GND, Vg are from-0.3V
Scanning 1.3V, each spacing is 50mV, as Id=0.1 μ A (W/L), and the Vg=Vt obtained；
DIBL=(Vtlin-Vtsat)/(1.1*VDDN-0.05), test condition is: Vd=0.05V, Vs=Vb=0,
Vg is in the range of 0～0.8VDDN；Swing=500* (Vg1-Vg2), test condition is: Vd=0.05,
Vs=Vb=0, Vg are in the range of 0～1.8V, and the test condition of Vg1 is Id=10nA* (W/L), Vg2
Test condition be Id=0.1nA* (W/L)；The test condition of Ion/Ioff is: Vb=Vs=GND,
Vd=Vg=1.0V, Id=Ion；Vb=Vs=GND, Vd=1.0V, Vg=0V, Id=Ioff；Permissible
Seeing, the TiAl alloy thin film prepared according to the present embodiment can meet the electrical property of 22nm MOS device
Requirement.
In embodiments of the present invention, by add in existing PVD equipment side coil and and its
The radio-frequency power supply being connected so that target and side coil apply radio-frequency power jointly on noble gas,
Increase plasma density, and coordinate corresponding PVD so that the PVD provided according to the present invention
Equipment and the metal work function layer of PVD deposit, not only have good electric property, simultaneously energy
Flute surfaces in high-aspect-ratio has good coverage effect, can continue sputter deposition craft and be applied to 22
In the metal gate process of nanometer and techniques below
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Appoint
What those of ordinary skill in the art, without departing under technical solution of the present invention ambit, all can profit
With the method for the disclosure above and technology contents, technical solution of the present invention made many possible variations and repair
Decorations, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from technical solution of the present invention
Content, according to the technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent
Change and modification, all still fall within the range of technical solution of the present invention protection.
Claims (9)
1. the PVD equipment of a metallic film sputtering, it is characterised in that including: with radio-frequency power supply
Target, pedestal and the side coil being connected, described target is the form of rotation can be arranged on sputtering chamber
The top of room, described pedestal is positioned at the bottom of sputtering chamber, and described side coil is positioned at sputtering chamber
Sidewall, target and side coil apply radio-frequency power supply and jointly act on noble gas, produce plasma.
Equipment the most according to claim 1, it is characterised in that described target is TiAl alloy
Target.
Equipment the most according to claim 1, it is characterised in that the material of described side coil with
The material of sputtering target material is identical.
Equipment the most according to claim 3, it is characterised in that described side coil and sputtering target
The material of material be following any one: identical metal simple-substance, identical alloying component, identical composition
Percentage ratio.
Equipment the most according to claim 1, it is characterised in that also include: with sputtering chamber phase
Connect preheats chamber.
6. the PVD of a metallic film sputtering, it is characterised in that be applied to target and side
The radio-frequency power of coil and/or rf frequency are different, use as according to any one of claim 1-5
Equipment, carries out the PVD sputtering technology of TiAl alloy, wherein by the substrate with groove structure:
Sputtering chamber pressure limit is 10～80mTorr；
Inert gas flow weight range is 30～100sccm；
Substrate temperature range is 16～26 DEG C；
Target material surface radio frequency power range is 500W～1000W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 2～100W, and frequency is 13.56MHz；
Side coil RF power bracket is 10～200W, and frequency is 2MHz.
PVD the most according to claim 6, it is characterised in that described noble gas is
Ar gas.
PVD the most according to claim 6, it is characterised in that described will have groove
Before the substrate of structure carries out PVD sputtering technology, also include:
Substrate is carried out heating technique, and heating temperature range is 150～250 DEG C, and heat time heating time is
30～120S.
PVD the most according to claim 6, it is characterised in that described process conditions are:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow scope is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, and frequency is 13.56MHz；
Pedestal biasing radio frequency power range is 10W, and frequency is 13.56MHz；
Side coil RF power bracket is 100W, and frequency is 2MHz.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475669A (en) * | 2017-09-19 | 2017-12-15 | 上海陛通半导体能源科技股份有限公司 | Metal oxide or nitride sputtering technology chamber |
| WO2018150159A1 (en) * | 2017-02-17 | 2018-08-23 | Tokamak Energy Ltd | First wall conditioning in a fusion reactor vessel |
| CN110797397A (en) * | 2019-11-12 | 2020-02-14 | 南方科技大学 | AlGaN/GaN ohmic contact electrode and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866257A (en) * | 2014-03-31 | 2014-06-18 | 苏州大学 | Preparation method of three-frequency high-density plasma assisted magnetron sputtering film |
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2015
- 2015-06-30 CN CN201510375208.6A patent/CN106319460B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866257A (en) * | 2014-03-31 | 2014-06-18 | 苏州大学 | Preparation method of three-frequency high-density plasma assisted magnetron sputtering film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018150159A1 (en) * | 2017-02-17 | 2018-08-23 | Tokamak Energy Ltd | First wall conditioning in a fusion reactor vessel |
| US10796806B2 (en) | 2017-02-17 | 2020-10-06 | Tokamak Energy Ltd. | First wall conditioning in a fusion reactor vessel |
| CN107475669A (en) * | 2017-09-19 | 2017-12-15 | 上海陛通半导体能源科技股份有限公司 | Metal oxide or nitride sputtering technology chamber |
| CN110797397A (en) * | 2019-11-12 | 2020-02-14 | 南方科技大学 | AlGaN/GaN ohmic contact electrode and preparation method and application thereof |
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| CN106319460B (en) | 2018-12-04 |
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