CN106319460B - A kind of PVD process of metallic film sputtering - Google Patents
A kind of PVD process of metallic film sputtering Download PDFInfo
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Abstract
The present invention provides the PVD equipments and technique of a kind of sputtering of metallic film, the equipment includes: the target being connected with radio-frequency power supply, pedestal and side coil, top of the target sputtering chamber can be mounted in the form of rotation, the pedestal is located at the bottom of sputtering chamber, the side coil is located at the side wall of sputtering chamber, target and side coil apply radio-frequency power supply collective effect in inert gas, generate plasma.Since the equipment increases side coil and coupled radio-frequency power supply, and by adjusting inert gas pressure, improve plasma density, other technological parameters sputtered in conjunction with PVD, it is good electric property to be formed, and in the good film of flute surfaces coverage effect, sputter deposition craft can be continued and be applied in the rear grid technique of 22 nanometers and following technology.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of the PVD equipment and technique of metallic film sputtering.
Background technique
The development that integrated circuit technique is advanced by leaps and bounds in the past few decades, critical size are 22 nanometers and following technology
It is the direction of semiconductor integrated circuit technology development.The grid of grid technique does not need to bear 1000 DEG C or so of high annealing afterwards,
Device performance can be promoted using high-k dielectric layer/metal gate structure, it is considered to be the direction of prevailing technology development.Physical vapor
Deposition (Physical Vapor Deposition, PVD) sputtering method deposition film is that important side is obtained in integrated circuit preparation process
Method, but the Step Coverage effect that PVD sputtering method prepares film is to be improved.
Grid technique is related to the problem of metal work function layer deposition after the removal of false grid afterwards, and metallic film is currently that comparison is normal
The metal work function regulating course of nMOSFET, the groove formed after false grid removal, with the big characteristic of depth-to-width ratio, in order to full
Sufficient metallic film forms the requirement well covered in flute surfaces, generallys use atomic layer deposition (Atomic layer
Deposition, ALD) method prepares metallic film, but the ALD method very good metallic film of difficult acquisition comprehensive performance.
A kind of possible method is to prepare metal work function layer using PVD sputtering method, and PVD sputtering method can obtain the good gold of electric property
Belong to film, but the PVD equipment of existing metallic film sputtering and the thin films step coverage rate of technique preparation are poor, it is difficult to meet brilliant
During the production of body pipe, the technique requirement of the flute surfaces deposited metal work-function layer formed after false grid removal.
Summary of the invention
The present invention provides the PVD equipments and technique of a kind of sputtering of metallic film, difficult to solve existing method for manufacturing thin film
Electric property is good to prepare, and can be the problem of flute surfaces form the metallic film well covered.
The present invention provides a kind of PVD equipments of metallic film sputtering, comprising:
Target, pedestal and the side coil being connected with radio-frequency power supply, the target are splashed by that can be mounted in the form of rotation
Penetrate the top of chamber, the pedestal is located at the bottom of sputtering chamber, and the side coil is located at the side wall of sputtering chamber, target with
Side coil applies radio-frequency power supply collective effect in inert gas, generates plasma, is applied to the radio-frequency power of side coil
Range is 10~200W, frequency 2MHz.
Preferably, the target is TiAl alloy target.
Preferably, the material of the side coil is identical as the material of sputtering target material.
Preferably, the material of the side coil and sputtering target material is following any: identical metal simple-substance, identical
Alloying component, identical percentage composition.
Preferably, the equipment further include: the preheating chamber being connected with sputtering chamber.
A kind of PVD process of metallic film sputtering, is applied to the radio-frequency power and/or rf frequency of target Yu side coil
Substrate with groove structure is carried out the PVD sputtering technology of TiAl alloy by difference, in which:
Sputtering chamber pressure limit is 10~80mTorr；
Inert gas flow range is 30~100sccm；
Substrate temperature range is 16~26 DEG C；
Target material surface radio frequency power range is 500W~1000W, frequency 13.56MHz；
It is 2~100W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 10~200W, frequency 2MHz.
Preferably, the inert gas is Ar gas.
Preferably, described will be before substrate with groove structure carries out PVD sputtering technology, further includes:
Heating process is carried out to substrate, heating temperature range is 150~250 DEG C, and heating time is 30~120S.
Preferably, the PVD process condition are as follows:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow range is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, frequency 13.56MHz；
It is 10W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 100W, frequency 2MHz.
The present invention provides metallic film sputtering PVD equipment and technique, due to the equipment increase side coil and with
Its radio-frequency power supply being connected, and by adjusting inert gas pressure, plasma density is improved, in conjunction with its of PVD sputtering
His technological parameter can form the associated electrical performance for meeting nMOS metal gate, and have good coverage effect in flute surfaces
Film, sputter deposition craft can be continued and be applied in the rear grid technique of 22 nanometers and following technology.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only one recorded in the present invention
A little embodiments are also possible to obtain other drawings based on these drawings for those of ordinary skill in the art.
Fig. 1 is the cross section structure schematic diagram that fluted substrate is formed after false grid remove；
Fig. 2 is the cross section structure schematic diagram of the metallic film prepared using the technique of the embodiment of the present invention；
Fig. 3 is the sputtering equipment structural schematic diagram according to the embodiment of the present invention；
Fig. 4 is the transmission electron microscope of the TiAl alloy film sections prepared using the technique of the embodiment of the present invention
(TEM) figure；
Fig. 5 is that electron microscope is penetrated in the scanning in the section of the TiAl alloy film prepared using the technique of the prior art
(SEM) figure；
Fig. 6 is that electron microscope is penetrated in the scanning in the section of the TiAl alloy film prepared using the technique of the prior art
(SEM) partial enlarged view of figure.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and for explaining only the invention, and is not construed as limiting the claims.
In addition, the present invention can in different examples repeat reference numerals and/or letter.This repetition be in order to simplify and
Clear purpose itself does not indicate the relationship between discussed various embodiments and/or setting.In addition, the present invention provides
Various specific techniques and material example, but those of ordinary skill in the art may be aware that other techniques are applied
In the use of property and/or other materials.In addition, structure of the fisrt feature described below in the "upper" of second feature may include
First and second features are formed as the embodiment directly contacted, also may include that other feature is formed in the first and second features
Between embodiment, such first and second feature may not be direct contact.
The grid of grid technique afterwards, i.e. gate replacement technique, device is formed after source-drain area generation, in this process, grid
Pole does not need to bear very high annealing temperature, and the influence to gate oxide is smaller, more and more after device size constantly reduces
High performance device is formed using rear grid technique, including the three-dimensional device such as traditional planar device and fin formula field effect transistor
Part etc..
In rear grid technique, firstly, the false grid of formation and source-drain area then remove false grid, groove is formed, then,
Grid is re-formed in groove, in the technique of metal gate, needs to be formed metallic film in the trench as metal work function layer,
Usually using TiAl alloy film as metal work function layer, the metal work function layer need and meanwhile have high step coverage rate with
And good electric property, to improve the performance of device.
The present invention provides the PVD equipment and technique of a kind of sputtering of metallic film, which passes through the side line newly increased
Circle cooperates the PVD process of TiAl alloy thin film sputtering provided by the invention, can prepare electrical property to improve plasma density
Can be good, and have the metal work function layer of good coverage rate to the groove of high-aspect-ratio, below with reference to specific embodiment pair
The process is described in detail.
The technique is the progress PVD sputtering technology on the substrate with groove structure, the groove by being formed after removing false grid,
The groove formed after being removed for the false grid of planar device or three-dimensional device.
In the present embodiment, be on planar device formed groove after, carry out the PVD sputtering technology, specifically, by with
Lower step forms groove:
Firstly, providing substrate 100, the substrate 100 is semiconductor substrate, can be Si substrate, Ge substrate, SiGe lining
Bottom, SOI (silicon-on-insulator, Silicon On Insulator) or GOI (germanium on insulator, Germanium On
Insulator) etc..In other embodiments, the semiconductor substrate can also be include other elements semiconductor or compound
The substrate of semiconductor, such as GaAs, InP or SiC etc. can also be laminated construction, such as Si/SiGe etc. can also be other
Epitaxial structure, such as SGOI (silicon germanium on insulator) etc..In the present embodiment, the substrate 100 is body silicon substrate, and substrate
Isolation 101 and groove 102 are formed on 100, with reference to shown in Fig. 1.
The isolation 101 can be silica for separating device in the present embodiment.
Firstly, performing etching on a semiconductor substrate 100, to form isolation channel；Can specifically include: cvd nitride object is thin
Film (not shown) is as mask layer and chemical mechanical grinding (CMP) stop-layer；Then carry out photoetching process to it, definition every
Position from slot；Then can using dry etching body silicon substrate be isolated it is groove etched, to form isolation channel.
Then, the filling of isolation channel oxide is carried out；Specifically SiO can be deposited by chemical vapor deposition (CVD) method2, with
Complete the filling to isolation channel.
Then, it carries out CMP process and removes extra filled layer, to form isolation 101；For example, removed by CMP process it is extra
Filled layer, and stop on CMP stop layer nitride film, then remove nitride film.
Then, false gate oxide and polysilicon layer (not shown) are deposited；For example, first depositing one layer of SiO2, as grid
Oxide layer, then pass through low pressure chemical vapor deposition equipment deposit polycrystalline silicon layer.
Then, gate oxide and polysilicon layer are performed etching, to form false grid (not shown)；For example, passing through light
Carving technology defines the position of false grid, then removes extra false grid layer and gate oxide using dry etch process.
Then, ion implanting is carried out to form source electrode and drain electrode；For example, N-shaped and the injection of p-type lightly doped drain are carried out first,
Then pass through deposition SiO2 and carry out dry etching to form side wall, carry out n+ type and p+ type source/drain heavy doping, then to be formed
Source electrode and drain electrode.
Then, deposition forms interlayer dielectric layer (ILD) 103 on substrate 100；It is, for example, possible to use the methods of CVD, PVD
Deposit undoped silica (SiO2), doping silica (such as Pyrex, boron-phosphorosilicate glass) and silicon nitride (Si3N4)
Or other low k dielectric materials etc., and planarized by CMP process, form the interlayer dielectric layer 103.
Then, false grid and false gate oxide are removed, to form groove 102.
So far the formation for having formed the embodiment of the present invention has the substrate 100 of isolation 101 and groove 102, as shown in Figure 1.
After forming groove 102, it is subsequently formed interface oxide layer 204, high-K medium film 205 and metal diffusion resistance
Barrier 206, as shown in Figure 2.It is initially formed interface oxide layer 204, generallys use O3Oxidation is formed, and it is thin then to deposit high K medium
Film 205, high K medium film 6 are used as gate dielectric layer, can be the HfO deposited by ALD method2Film, then deposited metal barrier layer
Film 206 generallys use the TiAlN thin film of ALD method deposition as metal diffusion barrier layer.
Then, the sputtering technology deposited metal work-function layer 207 of PVD is carried out.
In practical applications, metal work function layer 207 is typically formed metal/semiconductor Ohmic contact, composition at
Can divide be the important factor in order that form Ohmic contact.Common metal work function layer include following one or more and its it is folded
Layer: Al, Ti, Ta, TiSi2Alloy, Si3Ta5Alloy, AuGe alloy, AuBe alloy etc..Grid nMOSFET work content after the present embodiment
For several layers of common TiAl alloy film, the present invention is illustrated.
In this embodiment, the sputtering technology depositing Ti Al film of PVD is carried out, used equipment is as shown in figure 3, at this
In equipment, radio-frequency power supply is biased including sputtering chamber 8, the pedestal 11 positioned at 8 bottom of sputtering chamber and coupled pedestal,
For providing bias for the substrate 100 on pedestal 11；TiAl target 8 top of sputtering chamber can be mounted in the form of rotation
10 and coupled target radio-frequency power supply；And gas flowmeter 9 is for adjusting inert gas pressure, vacuum pump equimagnetic
Sputtering equipment common components are controlled, in addition, in order to enhance 8 plasma concentration of 10 surface of TiAl target and sputtering chamber, to reach
To the purpose for improving PVD sputtering stepped surfaces coverage rate, sputtering equipment provided by the invention also increases in the side wall of sputtering chamber 8
Side coil 12 and coupled side coil RF power supply, as shown in Figure 3.Wherein, TiAl target 10 and side line
Circle 12 applies radio-frequency power supply collective effect in inert gas, generates plasma；The material of the side coil 12 can be with
The material of TiAl target 10 is identical, and in the present embodiment, the side coil 12 can be TiAl coil, to ensure depositing Ti Al
The purity of film, further, the TiAl component of the side coil 12 can be same or similar with the component of TiAl target 10,
Percentage composition can also be same or similar, further, it is also possible to depending on the design requirement of equipment, such as the electricity of TiAl coil
Resistance rate etc..Certainly, the sputtering equipment of PVD provided by the invention further includes the sputtering equipments common components such as vacuum pump, film thickness gauge,
This is not listed one by one.
Correspondingly, in this embodiment, the technique for carrying out the sputtering technology depositing Ti Al film of PVD is as follows:
Sputtering chamber pressure limit is 10~80mTorr；
Inert gas flow range is 30~100sccm；
Substrate temperature range is 16~26 DEG C；
Target material surface radio frequency power range is 500W~1000W, frequency 13.56MHz；
It is 2~100W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 10~200W, frequency 2MHz.
Wherein, the inert gas is Ar gas, under radio-frequency power effect, Ar plasma is formed, in the orientation of electric field
The surface for accelerating lower bombardment sputtering target material 10, so that the atom or atom on 10 surface of sputtering target material leave sputtering target material 10, and sinks
Product is on substrate 100.
Further, in this embodiment, the sputtering technology is rf magnetron sputtering technique, is guaranteeing sputtering target material 10
In the case that voltage is smaller, the concentration of 10 surface plasma of sputtering target material can be significantly improved, and then improve the film of deposition
Coverage rate on 102 surface of groove.
It should be noted that the equipment that the present embodiment uses provides side coil 12 to generate side coil RF function
Rate, also, it is different from the radio-frequency power of side coil 12 and/or rf frequency to be applied to target 10, to guarantee sputtering target material 10
The lesser situation of voltage under, can by side coil 12 provide radio-frequency power increase sputtering chamber 8 in plasma density,
Improve PVD and sputters step surface coverage.
Further, before carrying out TiAl alloy thin film sputtering process, heating process, place to go crystal column surface can first be carried out
The volatizable material of remaining, improves the TiAl alloy film of deposition and the adhesion of preceding layer film.Specifically, can will have ditch
The body silicon substrate 100 of 102 structure of slot is put into preheating chamber (not shown go out), and heats to it, and heating process can be with are as follows:
180℃、90S。
In a specific embodiment, substrate 100 to be deposited is transmitted to preheating chamber, carries out 180 DEG C, 90S heating
Then substrate 100 to be deposited is transmitted to high vacuum sputtering chamber 8 by technique, PVD sputtering technology is carried out, using following technique item
Part:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow range is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, frequency 13.56MHz；
It is 10W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 100W, frequency 2MHz.
Using the technological parameter in the preferred embodiment, the TiAl with good 102 surface coverage effect of groove is prepared
Alloy firm, refering to what is shown in Fig. 4, Fig. 4 is the TEM of the TiAl alloy film sections prepared using the technique of the embodiment of the present invention
Figure, wherein the PVD equipment and technique that TiAl alloy film provides through the invention are prepared on 100 surface of substrate, as metal
Work-function layer 207.It can be seen that TiAl alloy film is good in the 102 surface coverage effect of groove with high-aspect-ratio.Due to
PVD equipment provided by the invention uses side coil, can improve plasma density in sputtering chamber 8, and cooperation is corresponding excellent
The technological parameter for changing PVD, so that the TiAl alloy film prepared all has good covering in the side wall of groove 102 and bottom
Effect, at the same also have the advantage that with deposit and keep complex alloys stock blend ability, can before deposit metal clearly
Except crystal column surface stains the oxide layer etc. with itself, so that according to the metallic film that PVD sputtering method is prepared, especially alloy is thin
Film, the metallic film than being prepared by ALD method have better electric property.
It should be noted that the PVD sputtering technology that the present embodiment provides is suitable for the preparation of TiAl alloy film, other are needed
The film for wanting PVD method to prepare, such as: metallic film, dielectric film etc. can use PVD equipment system provided by the invention
It is standby, but corresponding PVD process needs are adjusted according to the film type and particular/special requirement that actually prepare, it is required to prepare
Film.The cited corresponding PVD process of TiAl alloy film is merely exemplary in the present embodiment, is made to the present invention
Limitation.
Compared with prior art, the TiAl alloy film that the equipment and technique provided according to embodiments of the present invention is prepared is not
Only has excellent electric property, for example, the alloy compositions of film are stable so that the resistivity consistency of film different piece is high；
And has the characteristics that good coverage effect in flute surfaces.Fig. 5 is the TiAl alloy prepared using the technique of the prior art
Electron microscope (SEM) figure is penetrated in the scanning in the section of film, wherein TiAl alloy film is splashed by the PVD that the prior art provides
Method preparation is penetrated on 100 surface of substrate, as metal work function layer 207.It can be seen that the TiAl by prior art preparation is closed
Gold thin film deposited certain thickness TiAl alloy film at the top of high spot, and on the side wall of the groove 102 of high-aspect-ratio
It is hardly visible TiAl and adds up to film.Fig. 6 is the scanning in the section of the TiAl alloy film prepared using the technique of the prior art
Penetrate the partial enlarged view of electron microscope (SEM) figure, it can be seen that by the TiAl alloy film of prior art preparation, not only
Almost without covering TiAl alloy film on the side wall of the groove 102 of high-aspect-ratio, the bottom of groove 102, which can not also be told, is
It is no to be covered with TiAl alloy film.With the reduction of device feature size, the depth-to-width ratio of false gate groove is increasing, the prior art
The TiAl alloy film of preparation is no longer satisfied the requirement of device performance and manufacturing process.
By comparing fig. 4 to fig. 6, it is known that the PVD equipment and technique of the metallic film sputtering provided according to the present invention
The TiAl alloy film prepared is substantially better than the prior art in the surface coverage of the groove 102 with high-aspect-ratio.
According to the WAT test for the device using TiAl alloy film as metal work function layer 207 that the present embodiment is prepared
Tables of data, as shown in Table 1:
The WAT test data table of the device prepared in one the present embodiment of table
Wherein, the device is 22nm MOS device, and the test condition of Vtlin is Vd=0.05v, Vb=Vs=GND, Vg
From -0.3V scanning to 1.3V, each spacing is 50mV, as Id=0.1 μ A (W/L), obtained Vg=Vt；The test of Vtsat
Condition are as follows: Vd=1V, Vb=Vs=GND, Vg are scanned from -0.3V to 1.3V, and each spacing is 50mV, as Id=0.1 μ A (W/L)
When, obtained Vg=Vt；DIBL=(Vtlin-Vtsat)/(1.1*VDDN-0.05), test condition are as follows: Vd=0.05V, Vs=
The range of Vb=0, Vg are 0~0.8VDDN；Swing=500* (Vg1-Vg2), test condition are as follows: Vd=0.05, Vs=Vb=
0, Vg range is 0~1.8V, and the test condition of Vg1 is Id=10nA* (W/L), and the test condition of Vg2 is Id=0.1nA*
(W/L)；The test condition of Ion/Ioff are as follows: Vb=Vs=GND, Vd=Vg=1.0V, Id=Ion；Vb=Vs=GND, Vd=
1.0V, Vg=0V, Id=Ioff；It can be seen that being able to satisfy 22nm MOS device according to TiAl alloy film manufactured in the present embodiment
The requirement on electric performance of part.
In embodiments of the present invention, by increasing side coil in existing PVD equipment and coupled penetrating
Frequency power increases plasma density, and cooperate so that target and side coil apply radio-frequency power on inert gas jointly
Corresponding PVD process, so that the metal work function layer of PVD equipment and the PVD process deposit provided according to the present invention, not only has good
Good electric property, while can have good coverage effect in the flute surfaces of high-aspect-ratio, sputter deposition craft can be continued and answered
In the metal gate process for using 22 nanometers and following technology.
Although the present invention has been disclosed in the preferred embodiments as above, however, it is not intended to limit the invention.It is any to be familiar with ability
The technical staff in domain, without departing from the scope of the technical proposal of the invention, all using in the methods and techniques of the disclosure above
Appearance makes many possible changes and modifications or equivalent example modified to equivalent change to technical solution of the present invention.Therefore,
Anything that does not depart from the technical scheme of the invention are made to the above embodiment any simple according to the technical essence of the invention
Modification, equivalent variations and modification, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (4)
1. a kind of PVD process of metallic film sputtering, which is characterized in that be applied to target and side coil radio-frequency power and/
Or rf frequency is different, the PVD equipment sputtered using metallic film, the PVD equipment includes: the target being connected with radio-frequency power supply
Material, pedestal and side coil, top of the target can be mounted on sputtering chamber in the form of rotation, the pedestal are located at sputtering
The bottom of chamber, the side coil are located at the side wall of sputtering chamber, and target and side coil apply radio-frequency power supply collective effect
In inert gas, plasma is generated, the material of the side coil is identical as the material of sputtering target material；There to be groove structure
Substrate carry out TiAl alloy PVD sputtering technology, in which:
Sputtering chamber pressure limit is 10~80mTorr；
Inert gas flow range is 30~100sccm；
Substrate temperature range is 16~26 DEG C；
Target material surface radio frequency power range is 500W~1000W, frequency 13.56MHz；
It is 2~100W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 10~200W, frequency 2MHz.
2. PVD process according to claim 1, which is characterized in that the inert gas is Ar gas.
3. PVD process according to claim 1, which is characterized in that described to splash the substrate progress PVD with groove structure
Before penetrating technique, further includes:
Heating process is carried out to substrate, heating temperature range is 150~250 DEG C, and heating time is 30~120S.
4. PVD process according to claim 1, which is characterized in that the process conditions are as follows:
Sputtering chamber pressure limit is 60mTorr；
Ar gas flow range is 50sccm；
Substrate temperature range is 18 DEG C；
Target material surface radio frequency power range is 800W, frequency 13.56MHz；
It is 10W, frequency 13.56MHz that pedestal, which biases radio frequency power range,；
Side coil RF power bracket is 100W, frequency 2MHz.
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