CN106308834A - X-ray image sensor and method for eliminating ghost image by X-ray image sensor - Google Patents
X-ray image sensor and method for eliminating ghost image by X-ray image sensor Download PDFInfo
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Abstract
The invention provides an X-ray image sensor and a method for eliminating a ghost image by the X-ray image sensor. The X-ray image sensor comprises the following structure: each pixel is connected with two TFT (Thin Film Transistor) switches; two scanning lines are designed between pixel lines; two reading lines are designed between pixel arrays; scanning and reading of a bright-field image and a dark-field image can be carried out separately; an upper-side reading circuit is responsible for reading the bright-field image, and a lower-side releasing circuit is responsible for eliminating dark-field residual information. In a bright-field signal image acquisition process, the difference between a bright-field image scanning row and dark-field image charge releasing is one row or n rows of time, so that the charge releasing of the corresponding dark-field image is finished for one time or a plurality of times when the bright-field image is acquired. When the bright-field image is acquired, image lag information can be eliminated for one time or a plurality of times at the same time; independent clearing operation and extra clearing time are not increased; the X-ray image sensor can be used under a static acquisition condition or a dynamic acquisition condition, and the image acquisition frequency and the image quality are effectively improved.
Description
Technical field
The present invention relates to medical imaging diagnostic field, particularly relate to a kind of radioscopic image sensor and eliminate image
The method of ghost.
Background technology
X-ray digital photography has obtained increasingly being widely applied at current medical imaging diagnostic field, at various X
In ray digital photographing apparatus, X-ray detector is key components and parts most crucial in this kind equipment, that technology content is the highest,
During the imaging acquisition of whole image, serve indispensable pivotal role.
Non-crystalline silicon X-ray flat panel detector mainly has the X-ray plane of incidence (generally choosing carbon plate material), scintillator, X-ray
Imageing sensor, signal integration reading circuit, several parts such as structural housing are constituted.
The imaging process of X-ray detector needs to experience " X-ray " and arrives " visible ray " and arrive the conversion process of " electronics ".Such as figure
Shown in 1, in image shoot process, first X-ray can incide the photoelectric conversion layer of X ray sensor upper surface, also cries sudden strain of a muscle
Bright body layer, scintillator general selection cesium iodide or gadolinium oxysulfide.Under the irradiation of x-ray, scintillator layers can be by incident X-ray
It is converted into visible ray, it is seen that the PD photodiode on the X ray excited sensor of light produces light induced electron, long-pending by periphery subsequently
Divide amplifying circuit to be read by light induced electron integration, change into the voltage signal being easier to process on circuit, then this voltage is believed
Number by analog-digital converter be converted to quantify digital signal by data-interface send to host computer, the most whole photosignal
Change and complete with reading work.Obtain on host computer is exactly the digital picture through digital quantization with diagnostic message,
Owing to being digital picture, various Digital Image Processing can be carried out easily.
As in figure 2 it is shown, the radioscopic image sensor design of routine, the pel array impartial by size forms, and becomes
As each pixel elements in region by have amorphous silicon photodiodes PD of light sensitive characteristic and TFT (Thin Film Transistor,
Thin film transistor (TFT)) switch composition.Wherein the control of horizontal scanning line reception row scan control circuit opens or closes TFT switch；Row
Sense line connects reading circuit, coordinates horizontal scanning line to complete the transfer of amorphous silicon photodiodes PD storage optical charge.It is positioned at same
The horizontal scanning line of all pixels of a line shares one, and when this horizontal scanning line is opened, all TFT switch being positioned at this row are beaten
Opening, the optical charge integration of storage in all for this row amorphous silicon photodiodes PD is read by the most all row sense lines, completes one
The transfer of secondary photosignal, by timesharing gating function, order opens all horizontal scanning lines successively, opens while often going, outward
Enclose reading circuit and coordinate all column signals read when corresponding to front opening row, thus constitute a secondary complete collection image.
The peripheral circuit of detector, by time schedule controller, horizontal drive circuit, reading circuit, A/D change-over circuit, communicates and controls
Circuit processed forms.The electric charge of pixel is detected by unified command downlink drive at time schedule controller line by line, and then integration changes into
Voltage signal, voltage signal is converted to corresponding digital signal through A/D change-over circuit, and this digital signal correspond to amorphous silicon face
The grey decision-making gathering pixel corresponding in the image array of plate, after completing the collection of a width digital picture, the number that will collect
Word gray scale image transmission host computer shows.
In the work process of X-ray detector, the image collected is highly susceptible to lag (i.e. previous frame image retention
Information in the photodiode, the signal charge of general residual about 5%, it will usually in the process of next frame image reading
In, it is read out a part) informational influence.If flat panel detector is taken as static mode, (such as film making) uses, can
By increasing null clear operation repeatedly, the image information of image retention is purged, thus ensures that subsequent acquired image is not
Disturbed by previous frame image retention information, but acquisition time can be increased, reduce frequency acquisition.Dynamically should at flat panel detector
With occasion (perspective in such as operation process), owing to exposure image collection is to be carried out continuously, not free doing empties action,
So now whole picture quality is just particularly important by the lag ghost of image, the front frame of the current image overlay gathered
The information of image retention, can reduce the quality of image.
Conventional radioscopic image sensor cannot avoid the problems referred to above with detector design, eventually results in image current
Doped with above shooting the image of image retention in shooting image information, thus cause image to lose correction, directly influence image
Detailed information, some images are even unable to reach the purpose of medical diagnosis.
Therefore, the most effectively solve image lag ghost and the problem of frequency acquisition in radioscopic image sensor, improve figure
The quality of picture and frequency acquisition have become one of those skilled in the art's problem demanding prompt solution.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of radioscopic image sensor and
It eliminates the method for afterimage of image, for solving the problem that in prior art, lag ghost produces impact to picture quality.
For achieving the above object and other relevant purposes, the present invention provides a kind of radioscopic image sensor, described X-ray
Imageing sensor at least includes:
First scan drive circuit, output drive signal is to control the bright-field image information output in pixel cell；
Second scan drive circuit, output drive signal is to control the darkfield image residual risk output in pixel cell；
Multiple reading circuits, for reading the bright-field image information of storage in pixel cell；
Multiple release circuits, for removing the darkfield image residual risk of residual in pixel cell；
The pel array of multiple pixel cells composition, each pixel cell includes the first TFT switch, the second TFT switch and light
Electric diode, the first electrode of described first TFT switch connects described reading circuit, the second electrode connects described photodiode
Negative electrode, the 3rd electrode connect described first scan drive circuit；First electrode of described second TFT switch connects described release
Circuit, the second electrode connect the negative electrode of described photodiode, the 3rd electrode connects described second scan drive circuit；Described light
The anode of electric diode connects a negative voltage；
Wherein, same reading circuit is connected, with string picture with the first electrode of the first TFT switch in string pixel cell
First electrode of the second TFT switch in element unit connects same release circuit；
With the 3rd electrode of the first TFT switch in a line pixel cell connect in described first scan drive circuit same
One drives signal, connects in described second scan drive circuit with the 3rd electrode of the second TFT switch in a line pixel cell
Same driving signal.
Preferably, described first TFT switch and described second TFT switch are nmos device；The of described first TFT switch
One electrode is drain electrode, the second electrode is source electrode, the 3rd electrode is grid；First electrode of described second TFT switch is drain electrode, the
Two electrodes be source electrode, the 3rd electrode be grid.
Preferably, described first TFT switch and described second TFT switch are PMOS device；The of described first TFT switch
One electrode be source electrode, the second electrode for drain electrode, the 3rd electrode be grid；First electrode of described second TFT switch be source electrode,
Two electrodes are grid for drain electrode, the 3rd electrode.
Preferably, described reading circuit includes amplifier and an integrating capacitor, and the inverting input of described amplifier connects
First electrode of described first TFT switch, normal phase input end connect a reference voltage, and described integrating capacitor is connected to described amplification
Between the inverting input of device and the outfan of described amplifier.
It is highly preferred that described release circuit includes a resistance；First end of described resistance connects described second TFT switch
First electrode, the second end ground connection；First end of each resistance connects described reference voltage.
It is highly preferred that described reference voltage is provided by a voltage follower, the normal phase input end of described voltage follower is even
Connect described reference voltage, inverting input and outfan and connect the first end of each resistance.
For achieving the above object and other relevant purposes, the present invention also provides for a kind of method eliminating afterimage of image, described
The method eliminating afterimage of image at least includes:
Before exposure, the second scan drive circuit output driver' s timing, to remove the residual charge in pixel cell；
Stop output driver' s timing, be exposed operation；
After end to be exposed, the first scan drive circuit and the second scan drive circuit export 2 groups respectively and drive signal, with
Respectively the bright-field image in pel array is acquired and the darkfield image ghost in pel array is purged, same to a line
In pixel cell, the release of details in a play not acted out on stage, but told through dialogues residual charge lags behind the collection n row acquisition time of this row bright-field image, and wherein, n is for being more than
Zero natural number being less than described pel array line number；And then it is residual to current frame image while completing a frame bright-field image collection
Shadow is purged.
Preferably, collection a line of this row bright-field image is lagged behind with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
Acquisition time.
It is highly preferred that the bright-field image in each row pixel cell reads the most line by line, the details in a play not acted out on stage, but told through dialogues in each row pixel cell is residual
Electric charge is stayed to discharge the most line by line.
It is highly preferred that the bright-field image in each row pixel cell reads the most line by line, simultaneously to gathering bright-field image
Pixel cell carries out details in a play not acted out on stage, but told through dialogues residual charge release.
Preferably, in described first scan drive circuit, each driving signal differs a clock cycle successively, and described second
In scan drive circuit, each driving signal differs a clock cycle successively.
Preferably, the method for described elimination afterimage of image is applicable to still image collection and dynamic image acquisition.
As it has been described above, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof, there is following useful effect
Really:
1, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof are while gathering bright-field image,
Remove the lag information of darkfield image.
2, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof empty sequential by amendment and can realize
The function emptied for n time.
3, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof do not increase single null clear operation,
Do not increase extra clean up time.
4, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof can be at static acquisition conditions or dynamic
Use under state acquisition condition, be effectively improved picture-taken frequency and picture quality.
Accompanying drawing explanation
Fig. 1 is shown as Amorphous silicon flat-panel detectors photoelectricity transformation principle schematic diagram of the prior art.
Fig. 2 is shown as Amorphous silicon flat-panel detectors driving principle schematic diagram of the prior art.
Fig. 3 is shown as the structural representation of the radioscopic image sensor of the present invention.
Fig. 4 is shown as a kind of driver' s timing schematic diagram of the method eliminating afterimage of image of the present invention.
Fig. 5 is shown as the another kind of driver' s timing schematic diagram of the method eliminating afterimage of image of the present invention.
Element numbers explanation
1 radioscopic image sensor
11 pel arrays
121 first scan drive circuits
121 first scan drive circuits
13 amplifiers
14 voltage followers
S1～S3 step
S1 '～S3 ' step
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
Refer to Fig. 3～Fig. 5.It should be noted that the diagram provided in the present embodiment illustrates this most in a schematic way
The basic conception of invention, the most graphic in package count time only display with relevant assembly in the present invention rather than is implemented according to reality
Mesh, shape and size are drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its
Assembly layout kenel is likely to increasingly complex.
Embodiment one
As it is shown on figure 3, the present invention provides a kind of radioscopic image sensor 1, described radioscopic image sensor 1 at least wraps
Include:
Pel array the 11, first scan drive circuit the 121, second scan drive circuit 122, reading circuit and release electricity
Road.
As it is shown on figure 3, described pel array 11 includes multiple pixel cell, in the present embodiment, described pel array 11
It it is the array of 4 × 4.Each pixel cell includes the first TFT switch TFT1, the second TFT switch TFT2 and photodiode PD.Described
First TFT switch TFT1 first electrode connect described reading circuit, second electrode connect described photodiode PD negative electrode,
3rd electrode connects described first scan drive circuit 121；First electrode of described second TFT switch TFT2 connects described release
Circuit, the second electrode connect the negative electrode of described photodiode PD, the 3rd electrode connects described second scan drive circuit 122；
The anode of described photodiode PD connects a negative voltage, the span of usual described negative voltage be set as-4V～-8V it
Between.
Specifically, as a detailed description of the invention of the present invention, described first TFT switch TFT1 and described 2nd TFT opens
Pass TFT2 is nmos device.The grid end of described first TFT switch TFT1 connects described first scan drive circuit 121, drain terminal even
Connect described reading circuit, the negative electrode of the source described photodiode PD of connection；The anode of described photodiode PD connects negative electricity
Pressure；The grid end of described second TFT switch TFT2 connects described second scan drive circuit 122, drain terminal connects described release circuit,
Source connects the negative electrode of described photodiode PD.Described first scanning is received when the grid of described first TFT switch TFT1 terminate
During the high level signal that drive circuit 121 exports, described first TFT switch TFT1 conducting, the electricity in described photodiode PD
Lotus is read, it is achieved the reading of bright-field image；Described second turntable driving is received when the grid of described second TFT switch TFT2 terminate
During the high level signal that circuit 122 exports, described second TFT switch TFT2 conducting, the electric charge quilt in described photodiode PD
Release, it is achieved the removing of residual charge.
Specifically, as another embodiment of the present invention, described first TFT switch TFT1 and described 2nd TFT
Switch TFT2 is PMOS device.The grid end of described first TFT switch TFT1 connects described first scan drive circuit 121, source
Connect described reading circuit, the negative electrode of the drain terminal described photodiode PD of connection；The anode of described photodiode PD connects negative
Voltage；The grid end of described second TFT switch TFT2 connects described second scan drive circuit 122, source connects described release electricity
Road, drain terminal connect the negative electrode of described photodiode PD.Sweep when the grid termination of described first TFT switch TFT1 receives described first
When retouching the low level signal of drive circuit 121 output, described first TFT switch TFT1 conducting, in described photodiode PD
Electric charge is read, it is achieved the reading of bright-field image；Drive when the grid termination of described second TFT switch TFT2 receives described second scanning
During the low level signal that galvanic electricity road 122 exports, described second TFT switch TFT2 conducting, the electric charge in described photodiode PD
It is released, it is achieved the removing of residual charge.
As it is shown on figure 3, connect described first scanning with the 3rd electrode of the first TFT switch TFT1 in a line pixel cell
Same driving signal in drive circuit 121, connects institute with the 3rd electrode of the second TFT switch TFT2 in a line pixel cell
State the same driving signal in the second scan drive circuit 122.
Specifically, as it is shown on figure 3, the grid end of the first TFT switch TFT1 in each pixel cell of the first row connects described the
The first driving signal in scan driving circuit 121；The grid end of the second TFT switch TFT2 in each pixel cell of the first row is even
Connect the first driving signal in described second scan drive circuit 122；The first TFT switch TFT1 in the second each pixel cell of row
Grid end connect the two driving signal in described first scan drive circuit 121；The 2nd TFT in the second each pixel cell of row
The grid end of switch TFT2 connects the two driving signal in described second scan drive circuit 122；In each pixel cell of the third line
The grid end of the first TFT switch TFT1 connect the 3rd driving signal in described first scan drive circuit 121；The each picture of the third line
The grid end of the second TFT switch TFT2 in element unit connects the 3rd driving signal in described second scan drive circuit 122；The
The grid end of the first TFT switch TFT1 in the four each pixel cells of row connects the 4 wheel driven in described first scan drive circuit 121
Dynamic signal；The grid end of the second TFT switch TFT2 in each pixel cell of fourth line connects in described second scan drive circuit 122
Fourth drive signal.
As it is shown on figure 3, connect same reading electricity with first electrode of the first TFT switch TFT1 in string pixel cell
Road, connects same release circuit with first electrode of the second TFT switch TFT2 in string pixel cell.
Specifically, first electrode of each first TFT switch TFT1 in first row pixel cell connects the first reading circuit；
First electrode of each first TFT switch TFT1 in secondary series pixel cell connects the second reading circuit；3rd row pixel cell
In each first TFT switch TFT1 first electrode connect third reading go out circuit；Each TFT in 4th row pixel cell opens
The first electrode closing TFT1 connects the 4th reading circuit.
Specifically, first electrode of each second TFT switch TFT2 in first row pixel cell connects the first release circuit；
First electrode of each second TFT switch TFT2 in secondary series pixel cell connects the second release circuit；3rd row pixel cell
In each second TFT switch TFT2 first electrode connect the 3rd release circuit；Each 2nd TFT in 4th row pixel cell opens
The first electrode closing TFT2 connects the 4th release circuit.
Described first TFT switch TFT1 and described second TFT switch TFT2 is when selecting different types of device, and it connects
Relation does concrete setting according to device property, repeats the most one by one at this.
As it is shown on figure 3, each reading circuit connects with each first TFT switch TFT1 in string pixel cell, it is used for reading
The electric charge stored in each photodiode PD.
Specifically, as it is shown on figure 3, the structure of each reading circuit is consistent, including amplifier 13 and integrating capacitor C, described
The inverting input of amplifier connects first electrode of described first TFT switch TFT1, normal phase input end connects a reference voltage
Vref, in the present embodiment, described reference voltage Vref is set as 1.68V, can do according to circuit characteristic in actual use and have
Body sets, and is not limited with the present embodiment.Described integrating capacitor C is connected to the inverting input of described amplifier 13 and described amplification
Between the outfan of device.The normal phase input end of described amplifier 13 and inverting input are positioned at same current potential, i.e. by " empty short "
The current potential of the inverting input of described amplifier 13 is 1.68V.Described reading circuit is to the electricity of storage in same string pixel cell
Lotus amount is integrated, and is converted into the output of corresponding voltage.The output signal of all reading circuits realizes a frame bright-field image
Read.
As it is shown on figure 3, each release circuit connects with each second TFT switch TFT2 in string pixel cell, it is used for discharging
The electric charge of residual in each photodiode PD.
Specifically, as it is shown on figure 3, the structure of each release circuit is consistent, including a resistance, the first end of described resistance connects
First electrode of described second TFT switch TFT2, the second end ground connection of described resistance；First end of each resistance connects described reference
Voltage Vref.More specifically, described reference voltage Vref is provided by a voltage follower 14, the positive of described voltage follower 14
Input connects described reference voltage Vref, inverting input and outfan and connects the first end of each resistance.Described voltage follow
Described reference voltage Vref is exported the first end of each resistance by device 14, and in the present embodiment, described reference voltage Vref sets
For 1.68V so that first electrode of described first TFT switch TFT1 keeps with first electrode of described second TFT switch TFT2
Same current potential.The electric charge of residual in same string pixel cell is drawn out to reference to ground by described release circuit, to remove lag ghost pair
The impact of next frame image.
Embodiment two
As shown in Fig. 3～Fig. 4, the present invention also provides for a kind of method eliminating afterimage of image, described elimination afterimage of image
Method at least includes:
Step S1: before exposure, the second scan drive circuit 122 exports driver' s timing, residual with remove in pixel cell
Stay electric charge.
Specifically, in the present embodiment, using described radioscopic image sensor 1 as hardware foundation.As it is shown on figure 3, exposing
Before light, described second scan drive circuit 122 exports driver' s timing, turns on the second TFT switch in each pixel cell line by line
TFT2, to remove the residual charge in each pixel cell and electric leakage information.
Step S2: stop output driver' s timing, be exposed operation.
Specifically, as it is shown on figure 3, described first scan drive circuit 121 and described first scan drive circuit 122 stop
Output driver' s timing, each first TFT switch TFT1 and each second TFT switch TFT2 is in closed mode.Start exposure, each light
The optical signal received is converted electric charge and is stored in each photodiode PD by electric diode PD.
Step S3: after end to be exposed, described first scan drive circuit 121 and described second scan drive circuit 122
Export 2 groups respectively and drive signal, respectively the bright-field image in pel array to be acquired and to the details in a play not acted out on stage, but told through dialogues in pel array
Afterimage of image is purged, and lags behind the collection n of this row bright-field image with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
Row acquisition time, wherein, n is the natural number more than zero less than described pel array line number；And then complete a frame bright-field image
While collection, current frame image ghost is purged.
In the present embodiment, adopting of this row bright-field image is lagged behind with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
Collection a line acquisition time, in actual use, can set according to specific requirement, not be limited with the present embodiment.Each row pixel list
Bright-field image in unit reads the most line by line, and the details in a play not acted out on stage, but told through dialogues residual charge in each row pixel cell discharges the most line by line.
Specifically, as shown in Figures 3 and 4, after end to be exposed, described first scan drive circuit 121 and described second
Scan drive circuit 122 is according to clock signal CK output drive signal.In the first clock cycle, described first scan drive circuit
121 output the first driving signal Gate1, in the present embodiment, each driving signal is high effectively, and each pulse width driving signal
Degree is a clock cycle.Each first TFT switch TFT1 in the first row pixel cell is switched on, and remaining TFT switch is in
Closed mode, it is defeated that the electric charge stored in each photodiode PD in the first row pixel cell is converted into voltage by each reading circuit
Go out, it is achieved the collection of bright-field image in the first row pixel cell.
Specifically, as shown in Figures 3 and 4, after the bright-field image collection of the first row pixel cell terminates, at the present embodiment
In, each driving signal differs a clock cycle successively, and i.e. in the second clock cycle, described second scan drive circuit 122 is defeated
Going out the first driving signal Gate1 ', described first scan drive circuit 121 exports two driving signal Gate2.The first row pixel
Each second TFT switch TFT2 in unit and each first TFT switch TFT1 in the second row pixel cell is switched on, remaining TFT
Switch is in closed mode, and in the second row pixel cell, in each photodiode PD, the electric charge of storage is turned by each reading circuit
Turning to voltage output, in each photodiode PD in the first row pixel cell, the electric charge of residual passes through each release circuit quilt simultaneously
It is released to, with reference to ground, realize darkfield image in the collection of bright-field image in the second row pixel cell and the first row pixel cell simultaneously
The removing of ghost.
Specifically, as shown in Figures 3 and 4, bright-field image collection end and the first row pixel of the second row pixel cell are treated
After the details in a play not acted out on stage, but told through dialogues residual charge release of unit terminates, i.e. in the 3rd clock cycle, described second scan drive circuit 122 exports second
Driving signal Gate2 ', described first scan drive circuit 121 exports the 3rd driving signal Gate3.In second row pixel cell
Each second TFT switch TFT2 and the third line pixel cell in each first TFT switch TFT1 be switched on, remaining TFT switch is equal
Being closed, in the third line pixel cell, in each photodiode PD, the electric charge of storage is converted into electricity by each reading circuit
Pressure output, in each photodiode PD in the second row pixel cell, the electric charge of residual is released to by each release circuit simultaneously
With reference to ground, realize the collection of bright-field image and darkfield image ghost in the second row pixel cell in the third line pixel cell simultaneously
Remove.
Specifically, as shown in Figures 3 and 4, by that analogy, treat the bright-field image collection of last column pixel cell terminate and
After the details in a play not acted out on stage, but told through dialogues residual charge release of the lastrow pixel cell of last column terminates, i.e. in the n-th clock cycle, described second scanning
Drive circuit 122 exports last and drives signal Gaten '.Each second TFT switch TFT2 quilt in last column pixel cell
Conducting, remaining TFT switch is in closed mode, the electric charge of residual in each photodiode PD in last column pixel cell
It is released to reference to ground by each release circuit, it is achieved the removing of darkfield image ghost in last column pixel cell.
While gathering current line bright-field image discharging lastrow details in a play not acted out on stage, but told through dialogues residual charge, an image frame grabber terminates
While, each pixel cell is performed the release of a details in a play not acted out on stage, but told through dialogues residual charge.
Embodiment three
As depicted in figs. 3 and 5, the present embodiment provides a kind of method eliminating afterimage of image, the present embodiment and embodiment two
All using described radioscopic image sensor 1 as hardware foundation.Difference is, in the present embodiment, in each row pixel cell
Bright-field image read the most line by line, the pixel cell gathering bright-field image is carried out details in a play not acted out on stage, but told through dialogues residual charge release simultaneously.
Specifically, the method for described elimination afterimage of image at least includes:
Step S1 ': before exposure, the second scan drive circuit 122 exports driver' s timing, residual with remove in pixel cell
Stay electric charge.
Specifically, as it is shown on figure 3, before exposure, described second scan drive circuit 122 exports driver' s timing, leads line by line
The second TFT switch TFT2 in logical each pixel cell, to remove the residual charge in each pixel cell and electric leakage information.
Step S2 ': stop output driver' s timing, be exposed operation.
Specifically, as it is shown on figure 3, described first scan drive circuit 121 and described first scan drive circuit 122 stop
Output driver' s timing, each first TFT switch TFT1 and each second TFT switch TFT2 is in closed mode.Start exposure, each light
The optical signal received is converted electric charge and is stored in each photodiode PD by electric diode PD.
Step S3 ': after end to be exposed, described first scan drive circuit 121 and described second scan drive circuit 122
Export 2 groups respectively and drive signal, respectively the bright-field image in pel array to be acquired and to the details in a play not acted out on stage, but told through dialogues in pel array
Afterimage of image is purged, and lags behind the collection n of this row bright-field image with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
Row acquisition time, wherein, n is the natural number more than zero less than described pel array line number；And then complete a frame bright-field image
While collection, current frame image ghost is purged.
In the present embodiment, adopting of this row bright-field image is lagged behind with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
Collection a line acquisition time, in actual use, can set according to specific requirement, not be limited with the present embodiment.
Specifically, as depicted in figs. 3 and 5, after end to be exposed, described first scan drive circuit 121 and described second
Scan drive circuit 122 is according to clock signal CK output drive signal.In the first clock cycle, described first scan drive circuit
121 output the first driving signal Gate1, in the present embodiment, each driving signal is high effectively, and described first turntable driving electricity
In road 121, each pulse width driving signal is a clock cycle, respectively drives signal in described second scan drive circuit 122
Pulse width be slightly less than a clock cycle.Each first TFT switch TFT1 in the first row pixel cell is switched on, remaining
TFT switch is in closed mode, and in the first row pixel cell, in each photodiode PD, the electric charge of storage reads electricity by each
Road is converted into voltage output, it is achieved the collection of bright-field image in the first row pixel cell.
Specifically, as depicted in figs. 3 and 5, after the bright-field image collection of the first row pixel cell terminates, at the present embodiment
In, each driving signal differs a clock cycle successively, and i.e. in the second clock cycle, described second scan drive circuit 122 is defeated
Going out the first driving signal Gate1 ', described first scan drive circuit 121 exports two driving signal Gate2.The first row pixel
Each second TFT switch TFT2 in unit and each first TFT switch TFT1 in the second row pixel cell is switched on, remaining TFT
Switch is in closed mode, and in the second row pixel cell, in each photodiode PD, the electric charge of storage is turned by each reading circuit
Turning to voltage output, in each photodiode PD in the first row pixel cell, the electric charge of residual passes through each release circuit quilt simultaneously
It is released to, with reference to ground, realize darkfield image in the collection of bright-field image in the second row pixel cell and the first row pixel cell simultaneously
The removing of ghost.
Specifically, as depicted in figs. 3 and 5, bright-field image collection end and the first row pixel of the second row pixel cell are treated
After the details in a play not acted out on stage, but told through dialogues residual charge release of unit terminates, i.e. in the 3rd clock cycle, described second scan drive circuit 122 exports first
Driving signal Gate1 ' and two driving signal Gate2 ', described first scan drive circuit 121 exports the 3rd driving signal
Gate3.Each second TFT switch TFT2 in the first row pixel cell, each second TFT switch TFT2 in the second row pixel cell
And each first TFT switch TFT1 in the third line pixel cell is switched on, remaining TFT switch is in closed mode, the 3rd
In row pixel cell, in each photodiode PD, the electric charge of storage is converted into voltage output, the first row simultaneously by each reading circuit
And the electric charge of residual is released to reference to ground by each release circuit in each photodiode PD that second in row pixel cell, with
In Shi Shixian the third line pixel cell, bright-field image gathers and darkfield image ghost clear in first, second row pixel cell
Remove.
Specifically, as depicted in figs. 3 and 5, by that analogy, treat the bright-field image collection of last column pixel cell terminate with
And the details in a play not acted out on stage, but told through dialogues residual charge removing remaining each row pixel cell of last column repeatedly discharges after terminating, i.e. in (n+1) clock week
Phase, described second scan drive circuit 122 exports n simultaneously and drives signal Gate1 '～Gaten '.Each second TFT switch TFT2
Switched on, remaining TFT switch is in closed mode, and in each photodiode PD, the electric charge of residual is let out by each release circuit
It is put into reference to ground.
While gathering current line bright-field image, the pixel cell gathering bright-field image is carried out details in a play not acted out on stage, but told through dialogues residual charge to release
Putting, while an image frame grabber terminates, details in a play not acted out on stage, but told through dialogues residual charge has carried out repeatedly discharging.
In sum, owing to using the scanning of dual scanning line, the design of double sense line, bright-field image and darkfield image
Can be separated and independently performed with reading.During bright field signal pattern gathers, bright-field image base line and darkfield image electric charge
Release difference a line or n row time.So bright-field image collection completes when, the electric charge of corresponding darkfield image discharges also
Complete one or many null clear operation, be not required to increase single clean up time.Under static acquisition condition, do not increase extra clear
The empty time, do not affect frequency acquisition；Under the conditions of dynamic acquisition, do not increase extra clean up time, it is achieved gather and empty
Simultaneously operating, effectively removes the ghost of current frame image, improves picture quality, provides technology more accurately to prop up for medical diagnosis
Hold.
As it has been described above, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof, there is following useful effect
Really:
1, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof are while gathering bright-field image,
Remove the lag information of darkfield image.
2, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof empty sequential by amendment and can realize
The function emptied for n time.
3, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof do not increase single null clear operation,
Do not increase extra clean up time.
4, the radioscopic image sensor of the present invention and the method for elimination afterimage of image thereof can be at static acquisition conditions or dynamic
Use under state acquisition condition, be effectively improved picture-taken frequency and picture quality.
In sum, the present invention provides a kind of radioscopic image sensor, including: the first scan drive circuit, the second scanning
Drive circuit, reading circuit, release circuit and pel array, each pixel cell include the first TFT switch, the second TFT switch and
Photodiode, the first electrode of described first TFT switch connects described reading circuit, the second electrode connects described photoelectricity two pole
The negative electrode of pipe, the 3rd electrode connect described first scan drive circuit；First electrode of described second TFT switch is released described in connecting
Electric discharge road, the second electrode connect the negative electrode of described photodiode, the 3rd electrode connects described second scan drive circuit；Described
The anode of photodiode connects negative voltage；Wherein, connect same with the first electrode of the first TFT switch in string pixel cell
One reading circuit, connects same release circuit with the first electrode of the second TFT switch in string pixel cell；Same one-row pixels
3rd electrode of the first TFT switch in unit connects the same driving signal in described first scan drive circuit, same to a line
3rd electrode of the second TFT switch in pixel cell connects the same driving signal in described second scan drive circuit.Also
A kind of method eliminating afterimage of image is provided, including: before exposure, the second scan drive circuit output driver' s timing, to remove
Residual charge in pixel cell；Stop output driver' s timing, be exposed operation；After end to be exposed, the first turntable driving
Circuit and the second scan drive circuit export 2 groups respectively and drive signal, to adopt the bright-field image in pel array respectively
Darkfield image ghost in pel array is also purged by collection, delayed with the release of details in a play not acted out on stage, but told through dialogues residual charge in a line pixel cell
In the collection n row acquisition time of this row bright-field image, wherein, n is the natural number more than zero less than described pel array line number；Enter
And while completing a frame bright-field image collection, current frame image ghost is purged.The radioscopic image sensing of the present invention
The method of device and elimination afterimage of image thereof, while gathering current bright-field image, is removed the lag information of current frame image, is passed through
Amendment empties the function that sequential can realize n time emptying；Do not increase single null clear operation, do not increase extra clean up time；Can
To use under the conditions of static acquisition condition or dynamic acquisition, it is effectively improved picture-taken frequency and picture quality.So, this
Bright effectively overcome various shortcoming of the prior art and have high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual such as complete with institute under technological thought without departing from disclosed spirit in art
All equivalences become are modified or change, and must be contained by the claim of the present invention.
Claims (12)
1. a radioscopic image sensor, it is characterised in that described radioscopic image sensor at least includes:
First scan drive circuit, output drive signal is to control the bright-field image information output in pixel cell；
Second scan drive circuit, output drive signal is to control the darkfield image residual risk output in pixel cell；
Multiple reading circuits, for reading the bright-field image information of storage in pixel cell；
Multiple release circuits, for removing the darkfield image residual risk of residual in pixel cell；
The pel array of multiple pixel cells composition, each pixel cell includes the first TFT switch, the second TFT switch and photoelectricity two
Pole is managed, and the first electrode of described first TFT switch connects described reading circuit, the moon of the second electrode described photodiode of connection
Pole, the 3rd electrode connect described first scan drive circuit；First electrode of described second TFT switch connects described release electricity
Road, the second electrode connect the negative electrode of described photodiode, the 3rd electrode connects described second scan drive circuit；Described photoelectricity
The anode of diode connects a negative voltage；
Wherein, same reading circuit is connected, with string pixel list with the first electrode of the first TFT switch in string pixel cell
First electrode of the second TFT switch in unit connects same release circuit；
Same drive with what the 3rd electrode of the first TFT switch in a line pixel cell connected in described first scan drive circuit
Dynamic signal, with the 3rd electrode of the second TFT switch in a line pixel cell connect in described second scan drive circuit same
One drives signal.
Radioscopic image sensor the most according to claim 1, it is characterised in that: described first TFT switch and described second
TFT switch is nmos device；First electrode of described first TFT switch is drain electrode, the second electrode is source electrode, the 3rd electrode is grid
Pole；First electrode of described second TFT switch is drain electrode, the second electrode is source electrode, the 3rd electrode is grid.
Radioscopic image sensor the most according to claim 1, it is characterised in that: described first TFT switch and described second
TFT switch is PMOS device；First electrode of described first TFT switch be source electrode, the second electrode for drain electrode, the 3rd electrode be grid
Pole；First electrode of described second TFT switch be source electrode, the second electrode for drain electrode, the 3rd electrode be grid.
Radioscopic image sensor the most according to claim 1, it is characterised in that: described reading circuit include amplifier and
One integrating capacitor, the inverting input of described amplifier connects the first electrode of described first TFT switch, normal phase input end connects
One reference voltage, described integrating capacitor is connected between the inverting input of described amplifier and the outfan of described amplifier.
Radioscopic image sensor the most according to claim 4, it is characterised in that: described release circuit includes a resistance；Institute
The first end stating resistance connects the first electrode of described second TFT switch, the second end ground connection；First end of each resistance connects described
Reference voltage.
Radioscopic image sensor the most according to claim 5, it is characterised in that: described reference voltage is by a voltage follow
Device provides, and the normal phase input end of described voltage follower connects described reference voltage, inverting input and outfan and connects each electricity
First end of resistance.
7. the method eliminating afterimage of image, it is characterised in that the method for described elimination afterimage of image at least includes:
Before exposure, the second scan drive circuit output driver' s timing, to remove the residual charge in pixel cell；
Stop output driver' s timing, be exposed operation；
After end to be exposed, the first scan drive circuit and the second scan drive circuit export 2 groups respectively and drive signal, with respectively
Bright-field image in pel array is acquired and the darkfield image ghost in pel array is purged, same to one-row pixels
In unit, the release of details in a play not acted out on stage, but told through dialogues residual charge lags behind the collection n row acquisition time of this row bright-field image, and wherein, n is little more than zero
Natural number in described pel array line number；And then while completing a frame bright-field image collection, current frame image ghost is entered
Row is removed.
The method of elimination afterimage of image the most according to claim 7, it is characterised in that: residual with details in a play not acted out on stage, but told through dialogues in a line pixel cell
The release staying electric charge lags behind collection a line acquisition time of this row bright-field image.
9. according to the method eliminating afterimage of image described in claim 7 or 8, it is characterised in that: bright in each row pixel cell
Field picture reads the most line by line, and the details in a play not acted out on stage, but told through dialogues residual charge in each row pixel cell discharges the most line by line.
10. according to the method eliminating afterimage of image described in claim 7 or 8, it is characterised in that: bright in each row pixel cell
Field picture reads the most line by line, the pixel cell gathering bright-field image is carried out details in a play not acted out on stage, but told through dialogues residual charge release simultaneously.
The method of 11. elimination afterimage of image according to claim 7, it is characterised in that: described first scan drive circuit
In each drive signal to differ successively a clock cycle, each in described second scan drive circuit drive signal to differ one successively
Clock cycle.
The method of 12. elimination afterimage of image according to claim 7, it is characterised in that: the side of described elimination afterimage of image
Method is applicable to still image collection and dynamic image acquisition.
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