CN106298991B - Silicon chip and preparation method thereof and device - Google Patents
Silicon chip and preparation method thereof and device Download PDFInfo
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- CN106298991B CN106298991B CN201610652752.5A CN201610652752A CN106298991B CN 106298991 B CN106298991 B CN 106298991B CN 201610652752 A CN201610652752 A CN 201610652752A CN 106298991 B CN106298991 B CN 106298991B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract description 69
- 229910003460 diamond Inorganic materials 0.000 claims description 78
- 239000010432 diamond Substances 0.000 claims description 78
- 239000000428 dust Substances 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 29
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract description 25
- 239000002253 acid Substances 0.000 abstract description 25
- 230000008569 process Effects 0.000 abstract description 25
- 238000005530 etching Methods 0.000 abstract description 23
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 235000008216 herbs Nutrition 0.000 description 8
- 210000002268 wool Anatomy 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000006467 substitution reaction Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002224 dissection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 241001481828 Glyptocephalus cynoglossus Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The present invention relates to photovoltaic art, specifically discloses a kind of silicon chip, has some cut channel patterns arranged in the first direction on the cut surface of the silicon chip；Cut channel pattern bends connection or interconnection by some strias.Above-mentioned silicon chip, because its cut channel pattern is by some strias bending connection or interconnection, after conventional soda acid process for etching, the light trapping structure of effect is could be formed with, so that Buddha's warrior attendant wire cutting technology is compatible with conventional soda acid process for etching.The invention also discloses a kind of preparation method of above-mentioned silicon chip and a kind of silicon slice wire cutting apparatus.
Description
Technical field
The present invention relates to photovoltaic art, more particularly to a kind of silicon chip and preparation method thereof and device.
Background technology
At present, silicon crystal wire cutting is typically all to use free abrasive wire cutting, i.e. cutting steel wire carries mortar and transported at a high speed
Dynamic, the free abrasive in mortar is ground type processing to silicon materials under the drive of the pressure and speed of cutting steel wire, so as to
Realize that silicon crystal is cut.Should during cutting steel wire be not involved in cutting in itself, due to the free abrasive in mortar and silicon materials
Real contact area is smaller, therefore relatively low to the clearance of rapidoprint, and process time is longer, low production efficiency.In addition, cutting
Larger, the side chipping of silicon chip surface damage afterwards is big and more, causes Si wafer quality to decline.Also it is exactly that above-mentioned technology also needs multiple
Miscellaneous equipment reclaims abrasive material and cutting liquid；Silicon chip surface after cutting has carborundum, cutting liquid, metal ion, causes subsequently to clean
Trouble.
In order to overcome disadvantages mentioned above, silicon wafer cut by diamond wire technology is progressively substituting traditional free abrasive wire cutting skill
Art.But Buddha's warrior attendant line cutting technology cuts obtained silicon chip at present, conventional soda acid process for etching system can not be subsequently used
Suede, making herbs into wool is carried out according to the soda acid process for etching of routine, its battery efficiency is not lifted to be declined on the contrary.At present, Buddha's warrior attendant wire cutting
Obtained silicon chip can only etch (RIE) or metal catalytic chemical attack (MCCE) method to carry out making herbs into wool using plasma reaction,
But due to above two process for etching, equipment investment is high or technology stability is poor and is difficult to promote.
Therefore, the technology of a kind of compatible Buddha's warrior attendant wire cutting and conventional soda acid process for etching is needed badly.
The content of the invention
Based on this, it is necessary to can not be compatible with conventional soda acid process for etching for existing Buddha's warrior attendant wire cutting the problem of, carry
For a kind of silicon chip that can using Buddha's warrior attendant wire cutting and subsequently use conventional soda acid making herbs into wool.
A kind of silicon chip, there are some cut channel patterns arranged in the first direction on the cut surface of the silicon chip；The cut channel
Pattern bends connection by some strias or interconnection forms.
Above-mentioned silicon chip, because its cut channel pattern is by some strias bending connection or interconnection, by conventional soda acid
After process for etching, the light trapping structure of effect is could be formed with, so that Buddha's warrior attendant wire cutting technology and conventional soda acid process for etching are simultaneous
Hold.
In one of the embodiments, the gully being spaced apart in the first direction is additionally provided with the cut surface of the silicon chip；
The gully extends in a second direction, and the second direction is vertical with the first direction；Stria at the gully is parallel.
In one of the embodiments, the depth in the gully is 5~50 μm；The width in the gully be 0.1~
1.5mm。
Present invention also offers a kind of preparation method of silicon chip.
A kind of preparation method of silicon chip, comprises the following steps：
Silicon crystal is subjected to wire cutting with diamond wire；
During the wire cutting, the diamond dust on the diamond wire is set to vibrate in the first direction, to form cut channel figure
Case.
The preparation method of above-mentioned silicon chip, subsequently it can make diamond wire directly using the soda acid process for etching of routine come making herbs into wool
Cutting technique is mutually compatible with the soda acid process for etching of routine, and then reduces the cost of manufacture of photovoltaic cell.
In one of the embodiments, it is additionally included in during the wire cutting, makes the diamond dust on the diamond wire
Move in a second direction, to form gully.
Present invention also offers a kind of silicon slice wire cutting apparatus.
A kind of silicon slice wire cutting apparatus, including：
Two guide wheels, be arranged in parallel；At least one in described two guide wheels is non-circular guide wheel, the non-circular guide wheel
Surface each point to the maximum difference of the distance of the rotary shaft of the non-circular guide wheel be a, 0<a<1mm；
And diamond wire, it is tensioned between two guide wheels, and moved under the drive of guide wheel.
Above-mentioned silicon slice wire cutting apparatus, because special guide wheel is set, diamond dust on diamond wire can be made along the
While one direction is moved, also vibrate in a second direction, so as to form the cut channel pattern of the present invention in silicon chip surface, make Buddha's warrior attendant
Wire cutting technology can be compatible with the soda acid process for etching of routine, and then reduces the cost of manufacture of photovoltaic cell.
In one of the embodiments, described two guide wheels are in regular polygon.
In one of the embodiments, the guide wheel includes rounded base wheel and scalable is connected to the base wheel
Surface on some projections.
In one of the embodiments, the metal base undulate of the diamond wire.
In one of the embodiments, the diamond dust of the diamond wire includes the first diamond dust and the second diamond dust, institute
The ratio for stating the first diamond dust and second diamond dust is 9:1~1:1.
Brief description of the drawings
Fig. 1 is the cut surface schematic diagram of the silicon chip of Buddha's warrior attendant wire cutting in the prior art.
Fig. 2 is the cut surface schematic diagram of the silicon chip of an embodiment of the present invention.
Fig. 3 is the structural representation of the silicon wafer cutting device of an embodiment of the present invention.
Fig. 4 is the structural representation of the line of cut of the silicon wafer cutting device of an embodiment of the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with embodiment
The present invention is further elaborated.It should be appreciated that embodiment described herein is only to explain the present invention,
It is not intended to limit the present invention.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
The silicon chip of existing Buddha's warrior attendant wire cutting, after conventional soda acid process for etching, its battery efficiency is not lifted
Decline on the contrary.The present inventor has found by research, referring to Fig. 1, the silicon chip 100 ' of existing Buddha's warrior attendant wire cutting, cuts shape
Into a plurality of parallel arrangement stria 101 ', the spacing between these strias 101 ' is about 1.6 μm, and stria 101 ' it
Between the silicon chip surface of similar mirror portion be present.After the soda acid process for etching of routine, because soda acid making herbs into wool utilizes soda acid
Corrosion anisotropy in crystal orientation, plus these parallel arrangements of stria 101 ', the cut surface of the silicon chip after making herbs into wool becomes on the contrary
It is smooth, light trapping structure is not formed.This reason for namely Buddha's warrior attendant wire cutting and conventional soda acid process for etching are incompatible.
Referring to Fig. 2, the silicon chip 100 of an embodiment of the present invention, formed by Buddha's warrior attendant wire cutting, it has cut surface.This is cut
There are some cut channel patterns 110 on face.(namely Y-direction in Fig. 2) periodic arrangement in the first direction of cut channel pattern 110.
Cut channel pattern 110 is made up of cutting stria of the diamond wire in cutting process.
The cut channel pattern 110 of the present invention is in " non-linear ", namely cut channel pattern 110 is by some strias bending connection or intersection
It is formed by connecting.Such as the mutually continued access such as " it ", " mutual ", " work ", " witch ", X-shaped, worm shape forms.The cut channel pattern of the present invention,
After conventional soda acid process for etching, the light trapping structure of surface rule change is formed.
Usually, the damage of cut channel pattern 110 is corresponding after Nano/micron level, the soda acid process for etching by routine
Ground light trapping structure is also Nano/micron level.
In order to further optimize the performance of silicon chip 100, the silicon chip 100 of present embodiment, it is additionally provided with along on its cut surface
The gully 104 that one direction is spaced apart；The gully of gully 104 extends in a second direction, and second direction is vertical with first direction
Direction (namely X-direction in second direction Fig. 2).Stria at gully 104 is parallel.
Specifically, the position in gully 104 and quantity, designed according to the position of the main gate line of photovoltaic cell and quantity.Example
Such as, the bar number in gully is 2,3,4,5 ... 18 etc..
Because gully 104 and main gate line are correspondingly arranged up and down, the stria at gully 104 it is parallel (i.e. with existing diamond wire
The stria of cutting is the same), after conventional soda acid process for etching, become more smooth, can so reduce reduction master
Recombination-rate surface and reduction main grid line resistance under grid line, so as to lift photovoltaic cell electricity conversion.
Preferably, the depth in gully 104 is 5~50 μm；The width in gully 104 is 0.1~1.5mm.
In the present embodiment, the number in gully is 4, and the depth in gully is 15 μm, and the width in gully is 0.8mm.
It is, of course, understood that in some cases, the present invention can also be not provided with gully 104.
Silicon chip provided by the present invention, because its cut channel pattern bends connection by some strias or intersects to form, passing through
After conventional soda acid process for etching, the light trapping structure of effect is could be formed with, so that Buddha's warrior attendant wire cutting technology and conventional soda acid
Process for etching is compatible, and then reduces the cost of manufacture of photovoltaic cell.
Present invention also offers a kind of preparation method of silicon chip.
A kind of preparation method of silicon chip, including silicon crystal is subjected to wire cutting with diamond wire.
Wherein, diamond wire includes metal base and the diamond dust being fixedly arranged on metal base；During cutting on line, make
Diamond dust in the first direction vibrate by (Y-direction in figure), to form cut channel pattern.
Because diamond dust while moving in X direction, also vibrated along Y-direction, so each diamond dust is in silicon chip surface
The stria generated is not a straight line in X direction, after the stria superposition of different diamond dust, that is, it is curved to form some strias
Folding connection or the cut channel pattern of interconnection.
In order to further optimize the performance of silicon chip, during cutting on line, in addition to diamond dust is set only to move in a second direction
Dynamic, stria now is the stria at gully.I.e. when needing to be formed gully, in certain period of time, diamond dust is only controlled
Moved along Y-direction.
Specifically, gully can by constant cutting position repeat cutting or it is constant cutting tension force repeat cutting method come
Realize.
The preparation method of above-mentioned silicon chip, subsequently it can make diamond wire directly using the soda acid process for etching of routine come making herbs into wool
Cutting technique is mutually compatible with the soda acid process for etching of routine.In addition, the present invention silicon chip preparation method, be applicable to monocrystalline and
Polycrystalline efficiency cutting manufacture.
Present invention also offers a kind of silicon wafer cutting device for being used to prepare above-mentioned silicon chip.
Referring to Fig. 3, silicon wafer cutting device 1000 includes two guide wheels 310,320, and diamond wire 400.
Wherein, the main function of two guide wheels 310,320 is to be tensioned diamond wire 400, and drives diamond wire 400 basic
Moved along the X-direction in figure.Specifically, two guide wheels 310,320 be arranged in parallel, and are spaced a distance in order to by silicon wafer
Body 200 is placed between two guide wheels 310,320.
Referring to Fig. 4, diamond wire 400 includes metal base 410 and diamond dust 420, and diamond dust 420 is fixedly arranged at metal base
On 410.The main function of metal base 410 is the carrier as diamond dust.Metal base 410 does not produce dissection substantially,
Play dissection is the diamond dust being fixedly arranged on metal base 410.
In cutting process, two guide wheels 310,320 run-in synchronisms, while the high-speed motion of diamond wire 400 is driven, so that
The high-speed motion of diamond dust 420, cutting is produced to silicon crystal 200.
It is, of course, understood that usually, silicon wafer cutting device 1000 also includes spray coolant device (not shown)
And silicon crystal hold-down devices (not shown) etc..These devices can use structure known in those skilled in the art,
This is repeated no more.
In the present invention, at least one in two guide wheels 310,320 is non-circular guide wheel, i.e. two guide wheels 310,320
In it is at least one in non-circular.The surface each point of non-circular guide wheel to the maximum difference of the distance of rotary shaft be a, 0<a<1mm.
It is, a is in the distance of point farthest apart from rotary shaft in non-circular guide pulley surface to rotary shaft and non-circular guide pulley surface
Difference of the point nearest apart from rotary shaft to the distance of rotary shaft.So because each point is apart from the distance not phase of the rotary shaft of guide wheel
Together, diamond wire is in motion process, while diamond dust 420 does not move only along an X, also has and is vibrated along Y-direction, and Y side
To vibration control within certain amplitude, so as to form the cut channel pattern of the present invention on the cut surface of silicon chip, and avoid
The parallel phenomenon of diamond wire cutting stria in the prior art.
It is highly preferred that 3~17 μm of a span.It so can further lift the performance of silicon chip.
In a preferred embodiment, two guide wheels are in regular polygon.It is of course also possible to it is that simply a guide wheel is in just
Polygon.
Illustrate the operation principle of the silicon wafer cutting device of the present invention with the guide wheel of positive 300 side shape below.
Two guide wheels in silicon wafer cutting device are identical, a length of 200mm in its footpath, and the spacing between two guide wheels is 400mm.
Because guide wheel is positive 300 side shape.In i.e. positive 300 side shape summit to the distance of rotary shaft be 100mm, positive 300 in shape while in
The distance of point to rotary shaft is 99.995mm.It is, positive 300 in shape summit with while midpoint arrive the distance of rotary shaft respectively
Difference a be 5 μm.
Two guide wheels are controlled by electric rotating machine, and synchronous rotary.Guide wheel drives diamond wire to be moved with 17m/s X-direction.
Due to positive 300 in shape summit from while midpoint arrive respectively rotary shaft distance it is different, cause the diamond dust on diamond wire in X side
Move and (vibrate in the Y direction) to while motion, there is periodic Y-direction again.
It is computed, because guide wheel is positive 300 side shape, i.e., guide wheel for each revolution, there is the Y-direction motion in 300 cycles.
Due to positive 300 in shape summit with while midpoint arrive respectively rotary shaft distance difference be 5 μm.That is, along with 17m/
S X-direction motion, the amplitude of diamond dust in the Y direction is 5 μm.
So that silicon chip width is 156mm as an example, then length of the diamond dust every about 500 μm in silicon chip X-direction makees one
Individual amplitude is 5 μm of stria.By the stria of different diamond dust, finally cut channel pattern is formed on the surface of silicon chip.
It is, of course, understood that guide wheel is not limited to regular polygon, other shapes, such as ellipse are can also be,
Also the partial arc section or on the circumference of guide wheel, it is (bent with substituted arc section by one or more straightway or arc section
Rate is different) or oval segmental arc or the substitution of other geometrical curves.Substitution can be uniform substitution spaced apart, also or
Irregular substitution.
It is, of course, also possible to be guide wheel include rounded base wheel and it is scalable be connected to it is some convex on base wheel surface
Rise.When the projection stretches out the periphery of base wheel, the diamond dust on diamond wire vibrates in the Y direction while X-direction moves,
The cut channel pattern of the present invention can now be formed.When the projection is retracted in the periphery of base wheel, now guide wheel recovers periphery,
Diamond dust on diamond wire only moves in X-direction, the stria that can be now formed at gully.
Preferably, metal base 410 is in wavy, namely " non-linear ".Metal base 410 can be plane in the present invention
Interior wave, can also be three-dimensional spatially spiral wave.
The metal base 410 designed using wave, the obstruction in X-Y directions can be buffered, be easy to " adaptive " bypass silicon
Hard spot on crystal 200, be advantageous to improve cutting speed, and avoid the hard spot disconnection problem of existing Buddha's warrior attendant wire cutting, from
And be advantageous to yield, cost and the production capacity of output silicon chip.Meanwhile wave design is combined with the design of guide wheel of the present invention, is made
Cutting movement spatial alternation, and then regular surface damage and making herbs into wool effect are formed, further lift power conversion efficiency (pce).
In the present embodiment, the wavelength of metal base 410 is 3mm, and the difference in height between trough and crest is 7 μm.
Preferably, diamond dust 420 is in non-uniform Distribution on metal base 410, crest, trough in metal base 410
Place is simultaneously or optionally one distribution is closeer.In the present embodiment, the density at crest, trough of diamond dust 420 is higher.
In the present embodiment, diamond dust 420 includes the first diamond dust 421 and the second diamond dust 422, the first diamond dust
421 and second diamond dust 422 be two kinds of different sizes diamond dust.Specifically, the particle diameter of the first diamond dust 421 is less than the second gold medal
The particle diameter of emery 422.
It is highly preferred that the ratio of the first diamond dust 421 and the second diamond dust 422 is 9:1~1:1.
Above-mentioned silicon slice wire cutting apparatus, because special guide wheel is set, diamond dust on diamond wire can be made along the
While one direction is moved, also vibrate in a second direction, so as to form the cut channel pattern of the present invention in silicon chip surface, make Buddha's warrior attendant
Wire cutting technology can be compatible with the soda acid process for etching of routine, and then reduces the cost of manufacture of photovoltaic cell.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned
The all possible combination of each technical characteristic in embodiment is all described, as long as however, the combination of these technical characteristics
In the absence of contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (8)
1. the silicon chip after a kind of Buddha's warrior attendant wire cutting, it is characterised in that have on the cut surface of the silicon chip and arrange in the first direction
Some cut channel patterns；The cut channel pattern bends connection by some strias or interconnection forms；The cut surface of the silicon chip
On be additionally provided with the gully being spaced apart in the first direction；The gully extends in a second direction, the second direction and described the
One direction is vertical；Stria at the gully is parallel.
2. silicon chip according to claim 1, it is characterised in that the depth in the gully is 5~50 μm；The width in the gully
Spend for 0.1~1.5mm.
3. the preparation method of the silicon chip described in a kind of claim 1, it is characterised in that comprise the following steps：
Silicon crystal is subjected to wire cutting with diamond wire；
During the wire cutting, the diamond dust on the diamond wire is set to vibrate in the first direction, to form cut channel pattern；
It is additionally included in during the wire cutting, the diamond dust on the diamond wire is only moved in a second direction, to form ditch
Gully.
A kind of 4. silicon slice wire cutting apparatus for being used to prepare the silicon chip described in claim 1, it is characterised in that including：
Two guide wheels, be arranged in parallel；At least one in described two guide wheels is non-circular guide wheel, the table of the non-circular guide wheel
Face each point to the maximum difference of the distance of the rotary shaft of the non-circular guide wheel be a, 0<a<1mm；
And diamond wire, it is tensioned between two guide wheels, and moved under the drive of guide wheel.
5. silicon slice wire cutting apparatus according to claim 4, it is characterised in that described two guide wheels are in regular polygon.
6. silicon slice wire cutting apparatus according to claim 4, it is characterised in that the guide wheel include rounded base wheel,
And the scalable some projections being connected on the surface of the base wheel.
7. silicon slice wire cutting apparatus according to claim 4, it is characterised in that the metal base of the diamond wire is in wave
Shape.
8. silicon slice wire cutting apparatus according to claim 7, it is characterised in that the diamond dust of the diamond wire includes first
The ratio of diamond dust and the second diamond dust, first diamond dust and second diamond dust is 9:1~1:1.
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| CN107263750B (en) * | 2017-08-07 | 2020-01-10 | 苏州赛万玉山智能科技有限公司 | Cutting method of solar silicon wafer and three-dimensional solar silicon wafer |
| CN110625835A (en) * | 2019-09-12 | 2019-12-31 | 西安奕斯伟硅片技术有限公司 | Silicon wafer forming processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866971A (en) * | 2010-05-18 | 2010-10-20 | 常州亿晶光电科技有限公司 | Broken solar cells with selective emitting stage |
| CN103056974A (en) * | 2011-10-22 | 2013-04-24 | 赵钧永 | Multi-line incising method and special equipment |
| CN103538160A (en) * | 2013-10-29 | 2014-01-29 | 苏州硅峰太阳能科技有限公司 | Hard and brittle material multi-line cutting method and cutting device |
| CN105047764A (en) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | Silicon chip texturing method |
| CN105122463A (en) * | 2013-02-12 | 2015-12-02 | 索莱克赛尔公司 | Monolithically isled back contact back junction solar cells using bulk wafers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101138869A (en) * | 2007-10-12 | 2008-03-12 | 南京航空航天大学 | Monocrystalline silicon high-efficient composite cutting method and cutting system thereof |
| JP5957835B2 (en) * | 2011-09-28 | 2016-07-27 | 株式会社Sumco | Method for producing solar cell wafer, method for producing solar cell, and method for producing solar cell module |
-
2016
- 2016-08-10 CN CN201610652752.5A patent/CN106298991B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866971A (en) * | 2010-05-18 | 2010-10-20 | 常州亿晶光电科技有限公司 | Broken solar cells with selective emitting stage |
| CN103056974A (en) * | 2011-10-22 | 2013-04-24 | 赵钧永 | Multi-line incising method and special equipment |
| CN105122463A (en) * | 2013-02-12 | 2015-12-02 | 索莱克赛尔公司 | Monolithically isled back contact back junction solar cells using bulk wafers |
| CN103538160A (en) * | 2013-10-29 | 2014-01-29 | 苏州硅峰太阳能科技有限公司 | Hard and brittle material multi-line cutting method and cutting device |
| CN105047764A (en) * | 2015-09-01 | 2015-11-11 | 浙江晶科能源有限公司 | Silicon chip texturing method |
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