CN106298971A - A kind of Zener diode and measurement apparatus - Google Patents
A kind of Zener diode and measurement apparatus Download PDFInfo
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- CN106298971A CN106298971A CN201610844331.2A CN201610844331A CN106298971A CN 106298971 A CN106298971 A CN 106298971A CN 201610844331 A CN201610844331 A CN 201610844331A CN 106298971 A CN106298971 A CN 106298971A
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- zener diode
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- 238000005259 measurement Methods 0.000 title claims abstract description 28
- 238000001514 detection method Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The measurement apparatus of a kind of Zener diode of the present invention, it is characterised in that: include power supply, transformator, power indicating circuit and bridge rectifier and testing circuit；Switch K1 and fuse FU it is in series with between described power supply and transformer L1；Described transformator has two secondary coils, a secondary coil L2 series-connection power supplies indicating circuit, another secondary coil L3 series bridge rectification circuit, full bridge rectifier connection detection circuit.The present invention provides a kind of Zener diode with the strongest breakdown characteristics.
Description
Technical field
The present invention relates to Zener diode field, especially a kind of Zener diode and measurement apparatus.
Background technology
Zener diode, utilizes pn-junction reverse breakdown state, its electric current can in very large range change and voltage the most not
The phenomenon become, the diode playing pressure stabilization function made.Zener diode is a kind of until all having before critical breakdown reverse voltage
There is the most high-resistance semiconductor device.On this critical breakdown point, backward resistance is reduced to a numerical value the least, low at this
In resistance district, electric current increase voltage then keeps constant, and Zener diode carrys out stepping according to breakdown voltage, because this characteristic,
Stabilivolt is mainly incorporated as manostat or voltage reference device uses.Zener diode can be together in series so that at higher electricity
Press use, be achieved with higher burning voltage by series connection.
The breakdown reverse voltage of existing Zener diode is little, the most breakdown, and reverse breakdown occurs on surface, by silicon table
The impact in face, burn-out resistance is poor, and the chip fabrication technique of Zener diode is complicated simultaneously, and cost is high.Steady for the unknown
The diode of pressure value, needs a simple and practical measurement apparatus.
Summary of the invention
The goal of the invention of the present invention is: for the problem of above-mentioned existence, it is provided that one has protection ring, has the most anti-
Breakdown capability, is difficult to burn, preparation method is simple and practical simultaneously Zener diode and measurement apparatus.
The technical solution used in the present invention is as follows:
The measurement apparatus of a kind of Zener diode of the present invention, including power supply, transformator, power indicating circuit and bridge rectifier
And testing circuit；Switch K1 and fuse FU it is in series with between described power supply and transformer L1；Described transformator has
Two secondary coils, a secondary coil L2 series-connection power supplies indicating circuit, another secondary coil L3 series bridge rectification circuit,
Full bridge rectifier connection detection circuit.
The measurement apparatus of a kind of Zener diode of the present invention, described power indicating circuit includes resistance R2 and light emitting diode
D1, described resistance is 500 ohm；Light emitting diode can be used for detecting whether power supply is energized, the switch conditions of instruction power supply.
The measurement apparatus of a kind of Zener diode of the present invention, described testing circuit includes electric capacity C1, current-limiting resistance R3, current limliting
Resistance R4, single-pole double-throw switch (SPDT) K2 and stabilivolt socket；Described single-pole double-throw switch (SPDT) K2 one end connects electric capacity C1, and one end connects steady
Pressure pipe socket；Difference series limiting resistor R3 and current-limiting resistance R4 on the branch road of described single-pole double-throw switch (SPDT) K2.
The protection that is disposed to of above current-limiting resistance and single-pole double-throw switch (SPDT) detects Zener diode safety, prevents electric current
Excessive burning diode, wherein the current-limiting resistance resistance on the road of single-pole double-throw switch (SPDT) is different, including big resistance and small resistor, surveys
First carry out current limliting with big resistance during examination, select applicable current limliting small resistor according to circumstances.
The measurement apparatus of a kind of Zener diode of the present invention, including P type substrate, upper end is provided with N well layer, described N well layer
For concave structure, protruding parts, two ends is silicon dioxide layer, described silicon dioxide layer lower end correspondence N trap is provided with protection
Ring, is doped diffusion region in the groove of described concave structure, including P+, P-, N+ and N-.
The measurement apparatus of a kind of Zener diode of the present invention, is provided with at least one groove in described N well layer；Described doping
Diffusion region is divided into two-layer, and lower floor is P-, and two ends, upper strata are P+, and centre is N-, is provided with N+ between adjacent P+ and N-.
More than invention is by P-and N+, and the PN junction parallel connection of P-and N-composition is constituted, and rationally arranges the doping content of N-,
Big 6-8 times of the breakdown reverse voltage of the PN junction that the breakdown reverse voltage of the PN junction that P-and N-form forms can be made than P-and N+, with
Time PN junction reverse breakdown occur at subsurface, do not affected by surface.
The measurement apparatus of a kind of Zener diode of the present invention, the electroplating surface of described doped diffusion region and silicon dioxide layer has
Silver layer, the bottom of described P type substrate is electroplate with Ni layer.
The measurement apparatus of a kind of Zener diode of the present invention, also includes the preparation method of Zener diode, and it includes following
Several steps:
Step one: aoxidized under the high temperature conditions by monocrystal silicon, grows silicon dioxide layer；
Step 2: be diffused on the monosilicon, carves diffusion region, then carries out low temperature diffusion；
Step 3: evaporate silver on the monosilicon, then perform etching；
Step 4: form plating mask, electrosilvering electrode in sheet sub-surface with positive photoresist；
Step 5: by thinning for the thickness of monocrystal silicon, carries out Electroless Plating Ni overleaf.
The measurement apparatus of a kind of Zener diode of the present invention, the electricity in step 4 in the preparation method of described Zener diode
The constituent of the electroplate liquid that plating uses is: silver chloride 40g/L, ferrous hydrofining 200g/L, potassium carbonate 20 g/L；Described plating
Temperature be 50 degrees Celsius, electric current is 4mA/cm2, the time is 1 hour.
The measurement apparatus of a kind of Zener diode of the present invention, in the preparation method of described Zener diode in step 4, light
The Ti layer beyond HF etching away silver electrode is used after photoresist.
In sum, owing to have employed technique scheme, the invention has the beneficial effects as follows: with existing Zener diode phase
Ratio, the voltage stabilizing of the Zener diode of the present invention falls into the hole concentration in district and electron concentration is higher, can be extended simultaneously,
There is good breakdown characteristics, and the preparation method in the present invention is simple and practical, low cost.
Accompanying drawing explanation
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:
Fig. 1 is the structural representation of Zener diode of the present invention；
Labelling in figure: 1 is P type substrate, 2 is N well layer, and 3 is silicon dioxide layer, and 4 is protection ring, and 5 is N-, and 6 is P-, and 7 is P+, 8
For N+, 9 is silver layer, and 10 is Ti layer.
Fig. 2 is the structural representation of Zener diode measurement apparatus of the present invention.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, except mutually exclusive
Feature and/or step beyond, all can combine by any way.
Any feature disclosed in this specification (including any accessory claim, summary), unless specifically stated otherwise,
By other equivalences or there is the alternative features of similar purpose replaced.I.e., unless specifically stated otherwise, each feature is a series of
An example in equivalence or similar characteristics.
Such as Fig. 1, the measurement apparatus of a kind of Zener diode of the present invention, including power supply, transformator, power indicating circuit and
Bridge rectifier and testing circuit；Switch K1 and fuse FU it is in series with between described power supply and transformer L1；
Described transformator has two secondary coils, a secondary coil L2 series-connection power supplies indicating circuit, and another secondary coil L3 connects
Bridge rectifier, full bridge rectifier connection detection circuit.
The measurement apparatus of a kind of Zener diode of the present invention, described power indicating circuit includes resistance R2 and light emitting diode
D1, described resistance is 500 ohm；Light emitting diode can be used for detecting whether power supply is energized, the switch conditions of instruction power supply.
The measurement apparatus of a kind of Zener diode of the present invention, described testing circuit includes electric capacity C1, current-limiting resistance R3, current limliting
Resistance R4, single-pole double-throw switch (SPDT) K2 and stabilivolt socket；Described single-pole double-throw switch (SPDT) K2 one end connects electric capacity C1, and one end connects steady
Pressure pipe socket；Difference series limiting resistor R3 and current-limiting resistance R4 on the branch road of described single-pole double-throw switch (SPDT) K2.
The measurement apparatus of a kind of Zener diode of the present invention, including P type substrate, upper end is provided with N well layer, described N well layer
For concave structure, protruding parts, two ends is silicon dioxide layer, described silicon dioxide layer lower end correspondence N trap is provided with protection
Ring, is doped diffusion region in the groove of described concave structure, including P+, P-, N+ and N-.
The measurement apparatus of a kind of Zener diode of the present invention, is provided with at least one groove in described N well layer；Described doping
Diffusion region is divided into two-layer, and lower floor is P-, and two ends, upper strata are P+, and centre is N-, is provided with N+ between adjacent P+ and N-.
The measurement apparatus of a kind of Zener diode of the present invention, the electroplating surface of described doped diffusion region and silicon dioxide layer has silver
Layer, the bottom of described P type substrate is electroplate with Ni layer.
The measurement apparatus of a kind of Zener diode of the present invention, also includes the preparation method of Zener diode, and it includes following
Several steps:
Step one: aoxidized under the high temperature conditions by monocrystal silicon, grows silicon dioxide layer；
Step 2: be diffused on the monosilicon, carves diffusion region, then carries out low temperature diffusion；
Step 3: evaporate silver on the monosilicon, then perform etching；
Step 4: form plating mask, electrosilvering electrode in sheet sub-surface with positive photoresist；
Step 5: by thinning for the thickness of monocrystal silicon, carries out Electroless Plating Ni overleaf.
The measurement apparatus of a kind of Zener diode of the present invention, the electricity in step 4 in the preparation method of described Zener diode
The constituent of the electroplate liquid that plating uses is: silver chloride 40g/L, ferrous hydrofining 200g/L, potassium carbonate 20 g/L；Described plating
Temperature be 50 degrees Celsius, electric current is 4mA/cm2, the time is 1 hour.
The measurement apparatus of a kind of Zener diode of the present invention, in the preparation method of described Zener diode in step 4, light
The Ti layer beyond HF etching away silver electrode is used after photoresist.
The invention is not limited in aforesaid detailed description of the invention.The present invention expands to any disclose in this manual
New feature or any new combination, and the arbitrary new method that discloses or the step of process or any new combination.
Claims (9)
1. the measurement apparatus of a Zener diode, it is characterised in that: include power supply, transformator, power indicating circuit and bridge-type
Rectification circuit and testing circuit；Switch K1 and fuse FU it is in series with between described power supply and transformer L1；Described
Transformator has two secondary coils, a secondary coil L2 series-connection power supplies indicating circuit, another secondary coil L3 series bridge
Rectification circuit, full bridge rectifier connection detection circuit.
2. the measurement apparatus of Zener diode as claimed in claim 1, it is characterised in that: described power indicating circuit includes electricity
Resistance R2 and light emitting diode D1, described resistance is 500 ohm.
3. the measurement apparatus of Zener diode as claimed in claim 1, it is characterised in that: described testing circuit includes electric capacity
C1, current-limiting resistance R3, current-limiting resistance R4, single-pole double-throw switch (SPDT) K2 and stabilivolt socket；Described single-pole double-throw switch (SPDT) K2 one end is even
Meeting electric capacity C1, one end connects stabilivolt socket；Difference series limiting resistor R3 and limit on the branch road of described single-pole double-throw switch (SPDT) K2
Leakage resistance R4.
4. a Zener diode, it is characterised in that: including that P type substrate, upper end are provided with N well layer, described N well layer is spill knot
Structure, protruding parts, two ends is silicon dioxide layer, is provided with protection ring in the correspondence N trap of described silicon dioxide layer lower end, described recessed
It is doped diffusion region in the groove of shape structure, including P+, P-, N+ and N-.
5. Zener diode as claimed in claim 4, it is characterised in that: it is provided with at least one groove in described N well layer；Institute
Stating doped diffusion region and be divided into two-layer, lower floor is P-, and two ends, upper strata are P+, and centre is N-, is provided with N+ between adjacent P+ and N-.
6. Zener diode as claimed in claim 4, it is characterised in that: described doped diffusion region and the surface of silicon dioxide layer
Being electroplate with silver layer, the bottom of described P type substrate is electroplate with Ni layer.
7. Zener diode as claimed in claim 4, it is characterised in that: also include the preparation method of Zener diode, its bag
Include following step:
Step one: aoxidized under the high temperature conditions by monocrystal silicon, grows silicon dioxide layer；
Step 2: be diffused on the monosilicon, carves diffusion region, then carries out low temperature diffusion；
Step 3: evaporate silver on the monosilicon, then perform etching；
Step 4: form plating mask, electrosilvering electrode in sheet sub-surface with positive photoresist；
Step 5: by thinning for the thickness of monocrystal silicon, carries out Electroless Plating Ni overleaf.
8. Zener diode as claimed in claim 4, it is characterised in that: step 4 in the preparation method of described Zener diode
In the constituent of electroplate liquid that uses of plating be: silver chloride 40g/L, ferrous hydrofining 200g/L, potassium carbonate 20 g/L；Institute
The temperature stating plating is 50 degrees Celsius, and electric current is 4mA/cm2, the time is 1 hour.
9. Zener diode as claimed in claim 4, it is characterised in that: step 4 in the preparation method of described Zener diode
In, use the Ti layer beyond HF etching away silver electrode after photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610844331.2A CN106298971A (en) | 2016-09-23 | 2016-09-23 | A kind of Zener diode and measurement apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610844331.2A CN106298971A (en) | 2016-09-23 | 2016-09-23 | A kind of Zener diode and measurement apparatus |
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| CN106298971A true CN106298971A (en) | 2017-01-04 |
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| CN201610844331.2A Withdrawn CN106298971A (en) | 2016-09-23 | 2016-09-23 | A kind of Zener diode and measurement apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11713415B2 (en) | 2018-11-21 | 2023-08-01 | Covia Solutions Inc. | Salt-tolerant self-suspending proppants made without extrusion |
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2016
- 2016-09-23 CN CN201610844331.2A patent/CN106298971A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11713415B2 (en) | 2018-11-21 | 2023-08-01 | Covia Solutions Inc. | Salt-tolerant self-suspending proppants made without extrusion |
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Application publication date: 20170104 |
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