CN106298628A - The preparation method of selective oxide layer, selective oxide layer and integrated circuit - Google Patents
The preparation method of selective oxide layer, selective oxide layer and integrated circuit Download PDFInfo
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- CN106298628A CN106298628A CN201510274662.2A CN201510274662A CN106298628A CN 106298628 A CN106298628 A CN 106298628A CN 201510274662 A CN201510274662 A CN 201510274662A CN 106298628 A CN106298628 A CN 106298628A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
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- Local Oxidation Of Silicon (AREA)
Abstract
The invention provides the preparation method of a kind of selective oxide layer, selective oxide layer and integrated circuit, wherein, the preparation method of selective oxide layer includes: on the silicon substrate sequentially forming the first oxide layer and patterned first nitration case, form the first field oxide；With described first nitration case as mask, described first oxide layer is performed etching to exposing described silicon substrate, and retain the first oxide layer between described first nitration case and described silicon substrate；The silicon substrate completing etching forms the second oxide layer, and on described first nitration case, forms patterned second nitration case；The silicon substrate forming described second nitration case forms the second field oxide；Remove described first nitration case and described second nitration case, to complete the preparation of described selective oxide layer.By technical scheme, enhance thickness and the degree of depth of field oxide, meanwhile, significantly reduce process deviation.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of selective oxide layer
Preparation method, a kind of selective oxide layer and a kind of integrated circuit.
Background technology
In the related, along with dimensions of semiconductor devices reduces, the isolation between device becomes extremely to weigh
, LOCOS (Local Oxide, selective oxide layer) is as a kind of important device isolation knot
Structure, is widely used in the manufacture process of semiconductor device.
But, as it is shown in figure 1, conventional make LOCOS (field oxide 2) method be based on
One-time formed silicon nitride mask and LOCOS (field oxide 2) growth technique realize,
LOCOS (field oxide 2) growth course can pierce the silicon substrate 1 of the lower section of silicon nitride mask
In, thus cause process deviation, and LOCOS (field oxide 2) prepared by employing conventional method
The degree of depth on the low side, and then affect its isolation effect.
Therefore, the preparation method of a kind of selective oxide layer how is designed to ensure that its isolation characteristic becomes
Technical problem urgently to be resolved hurrily.
Summary of the invention
The present invention is based at least one above-mentioned technical problem, it is proposed that a kind of new selective oxidation
Preparation method, a kind of new selective oxide layer and a kind of new integrated circuit of layer.
In view of this, the present invention proposes the preparation method of a kind of selective oxide layer, including: depending on
On the silicon substrate of secondary formation the first oxide layer and patterned first nitration case, form first oxidation
Layer；With described first nitration case as mask, described first oxide layer is performed etching to exposing described silicon
Till substrate, and retain the first oxide layer between described first nitration case and described silicon substrate；?
Complete to be formed on the silicon substrate of etching the second oxide layer, and on described first nitration case, form figure
The second nitration case changed；The silicon substrate forming described second nitration case forms the second field oxide；
Remove described first nitration case and described second nitration case, to complete the system of described selective oxide layer
Standby.
In this technical scheme, by forming the first oxide layer (ground floor on a silicon substrate
LOCOS), after and the first nitration case, the second oxide layer and the second nitration case are continuously formed, with two-layer
Nitration case, as LOCOS mask, forms the LOCOS that thickness is thicker, effectively reduces simultaneously
To the undercutting of silicon substrate under silicon nitride layer and process deviation in LOCOS growth course, it is effectively improved
The degree of depth of LOCOS, and then improve the isolation effect of LOCOS.
Specifically, when using the LOCOS that conventional method is formed, as set the thickness of the first oxide layer
Being 0.02 micron, the thickness of the first nitration case is 0.15 μm and time horizontal width is 2 μm, selects
The final thickness of property oxide layer is 0.57 μm, and meanwhile, its degree of depth is 0.3 μm, between source region between
Away from for 1 μm.Relatively, the preparation method of the application is used to form above-mentioned first oxide layer and first
After nitration case, etch away the first oxide layer in addition to below the first silicon nitride, then form the second oxygen
Change layer (thickness is less than or equal to the first oxide layer), then form the second nitration case and again carry out blind
Carve, although the thickness of nitration case and the first nitration case unanimously, but now, nitration case and below
Articulation structure (region between source region) is higher than its both sides silicon substrate, and the silicon substrate of nitration case root
Having silicon nitride to wrap up, this just effectively reduces in LOCOS growth course silicon substrate under silicon nitride layer
Undercutting and process deviation.
Based on after the silicon nitride mask that above-mentioned steps is formed, carry out second time LOCOS growth, this
Time, the final thickness of selective oxide layer is 0.57 μm, but, its depth value increases to 0.4 μ
Spacing between m, and source region improves to 1.25 μm, be effectively improved selective oxide layer every
From characteristic.
In technique scheme, it is preferable that forming first oxidation by selective oxidation processes
Before Ceng, including step in detail below: by thermal oxidation technology or chemistry breath depositing technics at described silicon
Described first oxide layer is formed on substrate；In described first oxide layer, by chemical vapor deposition shape
Become nitration case, and described nitration case is carried out successively photoetching and etching processing to form described first nitridation
Layer.
In technique scheme, it is preferable that form the first field oxide, including walking in detail below
Rapid: to form described first oxidation in the region without described first nitration case by selective oxidation processes
Layer.
In this technical scheme, it is mask by the first nitration case, defines the first field oxide, its
In, the first field oxide corrodes downwards silicon substrate to form silicon oxide, and oxygen below the first nitration case
Change speed slow, and then improve joint height by the first field oxide.
In technique scheme, it is preferable that form the second oxidation on the silicon substrate completing etching
Layer, including step in detail below: complete etching by thermal oxidation technology or chemical vapor deposition method
Silicon substrate on form described second oxide layer, wherein, the thickness of described second oxide layer is less than described
The thickness of the first oxide layer.
In this technical scheme, by forming the second oxide layer, the deposit for subsequent nitridation layer is carried out
Structure prepares, and specifically, the thickness of the second oxide layer is extremely low, efficiently avoid nitration case and silicon lining
The end, directly contacts and produces the unmatched problem of severe lattice, improves the structural reliability of device.
In technique scheme, it is preferable that form patterned second nitration case, including following tool
Body step: form the second nitration case on described first nitration case by chemical vapor deposition method；Right
Described second nitration case carries out photoetching and etching processing, to form described patterned second nitration case also
Expose described second oxide layer and complete the nitride filling in the bottom of described first nitration case.
In this technical scheme, by forming the second nitration case on the basis of the first nitration case, it is achieved
Cladding to silicon nitride hypozygal structure, namely during follow-up second field oxide is formed,
The distance value being favorably improved between the depth value of field oxide and source region.
In technique scheme, it is preferable that form the second field oxide, including walking in detail below
Rapid: to form described second by selective oxidation processes region above described first field oxide
Oxide layer.
In this technical scheme, by forming the second field oxide so that the depth value of field oxide is more
Greatly, the distance value between source region is bigger, and production process is easy, it is adaptable to produce in batches.
In technique scheme, it is preferable that remove described first nitration case and described second nitridation
Layer, including step in detail below: remove described first nitration case and described by method for selective etching
Second nitration case.
In this technical scheme, remove the first nitration case and the second nitridation by method for selective etching
Layer, can effectively remove nitration case, to avoid the thickness loss of field oxide.
In technique scheme, it is preferable that the preparation method of described selective oxide layer also includes
Step in detail below: removed by method for selective etching described first nitration case lower zone
One oxide layer.
In this technical scheme, by removing the first oxide layer of the lower zone of the first nitration case, complete
Become the preparation process of selective oxide layer, reduced the stress between the source region of device, and then improve
The structural reliability of device.
According to a further aspect in the invention, it is also proposed that a kind of selective oxide layer, by the most above-mentioned
The preparation method of the selective oxide layer described in one technical scheme is prepared from.
In accordance with a further aspect of the present invention, it is also proposed that a kind of integrated circuit, including: such as above-mentioned technology
Selective oxide layer described in scheme.
By above technical scheme, by forming the first oxide layer (ground floor on a silicon substrate
LOCOS), after and the first nitration case, the second oxide layer and the second nitration case are continuously formed, with two-layer
Nitration case, as LOCOS mask, forms the LOCOS that thickness is thicker, effectively reduces simultaneously
To the undercutting of silicon substrate under silicon nitride layer and process deviation in LOCOS growth course, it is effectively improved
The degree of depth of LOCOS, and then improve the isolation effect of LOCOS.
Accompanying drawing explanation
Fig. 1 shows the generalized section of the selective oxide layer in correlation technique；
Fig. 2 to Fig. 8 shows the preparation process of selective oxide layer according to an embodiment of the invention
Generalized section；
Fig. 9 shows the signal stream of the preparation method of selective oxide layer according to an embodiment of the invention
Cheng Tu.
Detailed description of the invention
In order to be more clearly understood that the above-mentioned purpose of the present invention, feature and advantage, below in conjunction with attached
The present invention is further described in detail by figure and detailed description of the invention.It should be noted that not
In the case of conflict, the feature in embodiments herein and embodiment can be mutually combined.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but,
The present invention can also be different from other modes described here by other and implement, therefore, and the present invention
Protection domain do not limited by following public specific embodiment.
Below in conjunction with Fig. 1 to Fig. 9, the preparation to selective oxide layer according to an embodiment of the invention
Process is specifically described.
The preparation method of selective oxide layer according to an embodiment of the invention, including: step 902,
On the silicon substrate 1 sequentially forming the first oxide layer 3 and patterned first nitration case 4, form the
One field oxide 2；Step 904, with described first nitration case 4 as mask, to described first oxidation
Layer 3 performs etching to exposing described silicon substrate 1, and retains described first nitration case 4 and institute
State the first oxide layer 3 between silicon substrate 1；Step 906, shape on the silicon substrate 1 completing etching
Become the second oxide layer 5, and form patterned second nitration case on described first nitration case 4
6；Step 908, forms the second field oxide on the silicon substrate 1 forming described second nitration case 6
2；Step 910, removes described first nitration case 4 and described second nitration case 6, to complete described choosing
The preparation of selecting property oxide layer.
In this technical scheme, by forming the first oxide layer 3 (ground floor on silicon substrate 1
LOCOS), after and the first nitration case 4, the second oxide layer 5 and the second nitration case 6 is continuously formed, with
Two-layer nitration case, as LOCOS mask, forms the LOCOS that thickness is thicker, the most effectively reduces
Undercutting and process deviation to silicon substrate under silicon nitride layer 1 in LOCOS growth course, effectively
Improve the degree of depth of LOCOS, and then improve the isolation effect of LOCOS.
Specifically, during as it is shown in figure 1, use the LOCOS that conventional method is formed, as set first
The thickness of oxide layer 3 is 0.02 micron, and the thickness of the first nitration case 4 is 0.15 μm and level width
When degree is 2 μm, the final thickness of selective oxide layer is 0.57 μm, and meanwhile, its degree of depth is 0.3
μm, the spacing between source region is 1 μm.Relatively, the preparation method of the application is used to be formed
After stating the first oxide layer 3 and the first nitration case 4, etch away first in addition to below the first silicon nitride
Oxide layer 3, forms the second oxide layer 5 (thickness is less than or equal to the first oxide layer 3) then, and
Rear formation the second nitration case 6 is also carried out blind quarter again, although the thickness of nitration case and the first nitration case 4
Unanimously, but now, nitration case and articulation structure (region between source region) below are higher than it
Both sides silicon substrate 1, and the silicon substrate 1 of nitration case root has silicon nitride to wrap up, this just effectively reduces
Undercutting and process deviation to silicon substrate under silicon nitride layer 1 in LOCOS growth course.
As shown in Figure 8, based on after the silicon nitride mask that above-mentioned steps is formed, second time is carried out
LOCOS grows, and now, the final thickness of selective oxide layer is 0.57 μm, but, it is deep
Angle value increases to 0.4 μm, and the spacing between source region improves to 1.25 μm, is effectively improved choosing
The isolation characteristic of selecting property oxide layer.
In technique scheme, it is preferable that as in figure 2 it is shown, by selective oxidation processes shape
Before becoming the first field oxide 2, including step in detail below: formed sediment by thermal oxidation technology or chemistry breath
Long-pending technique forms described first oxide layer 3 on described silicon substrate 1；In described first oxide layer 3
On, form nitration case by chemical vapor deposition, and described nitration case is carried out successively photoetching and etching
Process to form described first nitration case 4.
In technique scheme, it is preferable that as it is shown on figure 3, form the first field oxide 2, bag
Include step in detail below: formed in the region without described first nitration case 4 by selective oxidation processes
Described first field oxide 2.
In this technical scheme, it is mask by the first nitration case 4, defines the first field oxide
2, wherein, the first field oxide 2 corrodes downwards silicon substrate 1 to form silicon oxide, and at the first nitrogen
Change oxidation rate below layer 4 slow, and then improve joint height by the first field oxide 2.
In technique scheme, it is preferable that as shown in Figure 4, on the silicon substrate 1 completing etching
Form the second oxide layer 5, including step in detail below: by thermal oxidation technology or chemical vapor deposition
Technique forms described second oxide layer 5, wherein, described second oxygen on the silicon substrate 1 completing etching
Change the thickness thickness less than described first oxide layer 3 of layer 5.
In this technical scheme, by forming the second oxide layer 5, the deposit for subsequent nitridation layer is carried out
Structure preparation, specifically, the thickness of the second oxide layer 5 is extremely low, efficiently avoid nitration case and
Silicon substrate 1 directly contacts and produces the unmatched problem of severe lattice, and the structure that improve device is reliable
Property.
In technique scheme, it is preferable that as shown in Figure 2, Figure 5 and Figure 6, formed graphical
The second nitration case 6, including step in detail below: by chemical vapor deposition method described first
The second nitration case 6 is formed on nitration case 4；Described second nitration case 6 is carried out at photoetching and etching
Reason, to form described patterned second nitration case 6 and expose described second oxide layer 5 and complete
Nitride in the bottom of described first nitration case 4 is filled.
In this technical scheme, by forming the second nitration case 6 on the basis of the first nitration case 4,
Achieve the cladding to silicon nitride hypozygal structure, namely the mistake formed at follow-up second field oxide 2
Cheng Zhong, the distance value being favorably improved between the depth value of field oxide and source region.
In technique scheme, it is preferable that as it is shown in fig. 7, form the second field oxide 2, bag
Include step in detail below: by selective oxidation processes region above described first field oxide 2
Form described second field oxide 2.
In this technical scheme, by forming the second field oxide 2 so that the depth value of field oxide
Bigger, the distance value between source region is bigger, and production process is easy, it is adaptable to carry out batch raw
Produce.
In technique scheme, it is preferable that as shown in Figure 7 and Figure 8, remove described first nitridation
Layer 4 and described second nitration case 6, including step in detail below: removed by method for selective etching
Described first nitration case 4 and described second nitration case 6.
In this technical scheme, remove the first nitration case 4 and the second nitridation by method for selective etching
Layer 6, can effectively remove nitration case, to avoid the thickness loss of field oxide.
In technique scheme, it is preferable that as shown in Figure 7 and Figure 8, described selective oxidation
The preparation method of layer also includes step in detail below: remove described first nitrogen by method for selective etching
Change the first oxide layer 3 of the lower zone of layer 4.
In this technical scheme, by removing the first oxide layer of the lower zone of the first nitration case 4
3, complete the preparation process of selective oxide layer, reduce the stress between the source region of device, enter
And improve the structural reliability of device.
Technical scheme is described in detail, it is contemplated that how to design a kind of choosing above in association with accompanying drawing
The preparation method of selecting property oxide layer is to ensure the technical problem of its isolation characteristic.Therefore, the present invention proposes
The preparation method of a kind of new selective oxide layer, a kind of new selective oxide layer and a kind of new
Integrated circuit, by forming the first oxide layer (ground floor LOCOS) and the first nitrogen on a silicon substrate
Change after layer, continuously form the second oxide layer and the second nitration case, using two-layer nitration case as LOCOS
Mask, forms the LOCOS that thickness is thicker, and to effectively reduce in LOCOS growth course right simultaneously
Under silicon nitride layer, the undercutting of silicon substrate and process deviation, be effectively improved the degree of depth of LOCOS, enter
And improve the isolation effect of LOCOS.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for
For those skilled in the art, the present invention can have various modifications and variations.All essences in the present invention
Within god and principle, any modification, equivalent substitution and improvement etc. made, should be included in the present invention
Protection domain within.
Claims (10)
1. the preparation method of a selective oxide layer, it is characterised in that including:
On the silicon substrate sequentially forming the first oxide layer and patterned first nitration case, form first
Field oxide；
With described first nitration case as mask, described first oxide layer is performed etching to exposing described silicon
Till substrate, and retain the first oxide layer between described first nitration case and described silicon substrate；
The silicon substrate completing etching forms the second oxide layer, and shape on described first nitration case
Become patterned second nitration case；
The silicon substrate forming described second nitration case forms the second field oxide；
Remove described first nitration case and described second nitration case, to complete described selective oxide layer
Preparation.
The preparation method of selective oxide layer the most according to claim 1, it is characterised in that
Before forming the first field oxide by selective oxidation processes, including step in detail below:
On described silicon substrate, described first oxygen is formed by thermal oxidation technology or chemistry breath depositing technics
Change layer；
In described first oxide layer, form nitration case by chemical vapor deposition, and to described nitridation
Layer carries out photoetching and etching processing successively to form described first nitration case.
The preparation method of selective oxide layer the most according to claim 1, it is characterised in that
Form the first field oxide, including step in detail below:
Described first oxidation is formed in the region without described first nitration case by selective oxidation processes
Layer.
The preparation method of selective oxide layer the most according to claim 1, it is characterised in that
The silicon substrate completing etching forms the second oxide layer, including step in detail below:
Formed described on the silicon substrate completing etching by thermal oxidation technology or chemical vapor deposition method
Second oxide layer,
Wherein, the thickness of described second oxide layer is less than the thickness of described first oxide layer.
The preparation method of selective oxide layer the most according to claim 1, it is characterised in that
Form patterned second nitration case, including step in detail below:
On described first nitration case, the second nitration case is formed by chemical vapor deposition method；
Described second nitration case is carried out photoetching and etching processing, to form described patterned second nitrogen
Change layer and expose described second oxide layer and complete the nitride in the bottom of described first nitration case and fill out
Fill.
The preparation method of selective oxide layer the most according to claim 1, it is characterised in that
Form the second field oxide, including step in detail below:
Described second is formed by selective oxidation processes region above described first field oxide
Oxide layer.
The preparation method of selective oxide layer the most according to any one of claim 1 to 6,
It is characterized in that, remove described first nitration case and described second nitration case, including walking in detail below
Rapid:
Described first nitration case and described second nitration case is removed by method for selective etching.
The preparation method of selective oxide layer the most according to claim 7, it is characterised in that
Also include step in detail below:
The first oxide layer of the lower zone of described first nitration case is removed by method for selective etching.
9. a selective oxide layer, it is characterised in that by as arbitrary in claim 1 to 8
The preparation method of the selective oxide layer described in Xiang is prepared from.
10. an integrated circuit, it is characterised in that including: selectivity as claimed in claim 9
Oxide layer.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261926B1 (en) * | 2000-05-11 | 2001-07-17 | Mosel Vitelic, Inc. | Method for fabricating field oxide |
| CN101924059A (en) * | 2009-06-13 | 2010-12-22 | 无锡华润上华半导体有限公司 | Field insulation manufacturing method |
| CN102593040A (en) * | 2012-03-21 | 2012-07-18 | 无锡华润上华半导体有限公司 | Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer |
-
2015
- 2015-05-26 CN CN201510274662.2A patent/CN106298628A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261926B1 (en) * | 2000-05-11 | 2001-07-17 | Mosel Vitelic, Inc. | Method for fabricating field oxide |
| CN101924059A (en) * | 2009-06-13 | 2010-12-22 | 无锡华润上华半导体有限公司 | Field insulation manufacturing method |
| CN102593040A (en) * | 2012-03-21 | 2012-07-18 | 无锡华润上华半导体有限公司 | Integrated production method for local oxidation of silicon (LOCOS) multilayer oxide layer |
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Application publication date: 20170104 |