CN106298372A - A kind of micro-nano mechanical switch and manufacture method thereof - Google Patents

A kind of micro-nano mechanical switch and manufacture method thereof Download PDF

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Publication number
CN106298372A
CN106298372A CN201610809521.0A CN201610809521A CN106298372A CN 106298372 A CN106298372 A CN 106298372A CN 201610809521 A CN201610809521 A CN 201610809521A CN 106298372 A CN106298372 A CN 106298372A
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China
Prior art keywords
electrode
pair
overarm arm
drive electrode
arm
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CN201610809521.0A
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Chinese (zh)
Inventor
粟雅娟
曹合适
贾昆鹏
战俊
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to CN201610809521.0A priority Critical patent/CN106298372A/en
Publication of CN106298372A publication Critical patent/CN106298372A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00—Apparatus or processes specially adapted for the manufacture of electric switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

The invention discloses a kind of micro-nano mechanical switch and manufacture method thereof, wherein this micro-nano mechanical switch includes: Semiconductor substrate；Insulating barrier, is positioned on described Semiconductor substrate；It is positioned at the floating overarm arm on insulating barrier；It is positioned at a pair drive electrode on insulating barrier and a pair contact electrode, one pair of which drive electrode the both sides of overarm arm and and overarm arm between isolate by air gap, a pair contact electrode is in the both sides of overarm arm and and hangs oneself from a beam and is isolated by air gap between arm and drive electrode.

Description

A kind of micro-nano mechanical switch and manufacture method thereof
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field, more particularly, it relates to a kind of micro-nano mechanical switch and Manufacture method.
Background technology
The development appearing as semicon industry of complementary metal oxide semiconductors (CMOS) (CMOS) provides powerful power, Make miniaturization, quickly, the electronic product aspect of low cost achieve huge success.Along with sending out of large scale integrated circuit Exhibition, the characteristic size of CMOS transistor enters Nano grade, and CMOS is faced with huge development bottleneck, gate leakage, short channel Effect, PN junction leakage etc. greatly hinder the further development of integrated circuit.But meanwhile, the appearance of micro-nano mechanical switch Compensate for the deficiency of semiconductor switch to a great extent.Micro-nano mechanical switch has the spies such as volume is little, speed is fast, low in energy consumption Point, due to the existence of physical air gap, leakage current during its open circuit is almost nil, and has delay effect.Along with science and technology Progressive, the high-end Disciplinary Frontiers such as Aero-Space, communication, computer becomes particularly urgent to the demand of low-power consumption micro device, when While traditional semiconductor switch cannot meet this demand, micro-nano mechanical closes this important mission of bearing the responsibility most probably.
Electrostatic drive type micro-electromechanical switch structure is simple, easy to control, and its power consumption is little, response frequency is high, be easy to collection Become, be the study hotspot of current micro-nano mechanical switch.Threshold voltage is that electrostatic micro-nano mechanical switchs most important performance parameter, The most also it is the biggest obstacle of restriction micro-nano mechanical switch development.Analysis shows, the air gap (gas between drive electrode and spring beam Body space) it is one of principal element affecting electrostatic micro-nano mechanical switch, in the case of other parameter constant, air gap value is more Little, threshold voltage is the least.Traditional electrostatic micro-nano mechanical switch mostly is zigzag tread patterns, complex process and be not easy to integrated, threshold value Voltage is up to more than tens volts of even one hectovolt spies.
Therefore, the electrostatic micro-nano mechanical switch of laterally driven type becomes current research tendency.For laterally driven type Electrostatic micro-nano mechanical switch, air gap many by after photoetching etching is formed, therefore the precision of photoetching become affect air gap value main because of Element, the minimum dimension that current ultraviolet photolithographic can reach is even as high as 500nm, greatly at more than 100nm, common ultraviolet photolithographic Hinder the reduction of micro-nano mechanical switching threshold voltage.For the problems referred to above, research worker has turned one's attention to more advanced Electron beam lithography, electron beam lithography can write out the accuracy value groove structure at about 50nm, less structure electrical Bundle photoetching (e.g., less than 20nm) is also the most helpless, and, the cost of this technology is of a relatively high, is not suitable for extensive raw Producing, the air gap reducing micro-nano mechanical switch the most further becomes focus urgently to be resolved hurrily.
For above-mentioned situation, it is badly in need of providing the micro-nano mechanical switch of a kind of novelty and manufacture method thereof, solves current photoetching The technology restriction to air gap value.
Summary of the invention
In order to solve the problems referred to above, embodiment of the invention discloses that a kind of micro-nano mechanical switch, including: quasiconductor serves as a contrast The end；Insulating barrier, is positioned on described Semiconductor substrate；It is positioned at the floating overarm arm on insulating barrier；It is positioned on insulating barrier A pair drive electrode and a pair contact electrode, one pair of which drive electrode overarm arm both sides and and overarm arm between Isolated by air gap, a pair contact electrode overarm arm both sides and and overarm arm and drive electrode between by air gap every From.
An aspect according to embodiments of the present invention, the material of overarm arm and electrode may include that polysilicon, doped polycrystalline The combination of any one or more in silicon, SiGe, SiC, Al, Ti or TiAl.Insulating barrier can include silicon oxide, silicon nitride or nitrogen Silicon oxide.
An aspect according to embodiments of the present invention, the size of air gap can be: 1nm-100nm, such as, can be 3nm, 5nm, 7nm or tens nm.
An aspect according to embodiments of the present invention, the two ends of overarm arm are respectively the first end and the second end, and wherein first Duan Yumao district connects, and anchor district is fixed on insulating barrier, and the second end is near contact electrode.
An aspect according to embodiments of the present invention, a pair drive electrode includes that the first drive electrode and second drives electricity Pole, a pair contact electrode includes the first contact electrode and the second contact electrode, and the first drive electrode and first contacts electrode It is positioned at the wherein side of overarm arm, the second drive electrode and the second contact electrode and is positioned at the opposite side of overarm arm, a pair driving electricity Size of gaps between pole with overarm arm is equal to the size of gaps contacted for a pair between electrode and overarm arm.
In order to solve the problems referred to above, embodiments of the invention also disclose the manufacture method of a kind of micro-nano mechanical switch, bag Include: Semiconductor substrate is provided；Form insulating barrier on the semiconductor substrate；Described insulating barrier is formed overarm arm and Contacting electrode to driving with electrode and a pair, the sidewall of arm of wherein hanging oneself from a beam and bottom are sacrificed layer and surround, a pair drive electrode position In overarm arm both sides and and overarm arm between isolate by sacrifice layer, a pair contact electrode be positioned at hang oneself from a beam arm both sides and And isolated by sacrifice layer between overarm arm and drive electrode；Remove described sacrifice layer thus form floating overarm arm, a pair Drive electrode and overarm arm between isolate by air gap, a pair contact electrode and overarm arm and drive electrode between pass through air gap every From.
An aspect according to embodiments of the present invention, described insulating barrier is formed overarm arm and a pair drive electrode and The step of a pair contact electrode includes: deposits the first conductive layer on described insulating barrier, and is patterned as the electrode needed, including A pair drive electrode and a pair contact electrode；Deposit sacrifice layer on the electrodes；Sacrifice layer deposits the second conductive layer, the Two conductive layers embed the region between the pair of drive electrode and the region between a pair contact electrode；To described second conduction Layer, sacrifice layer and electrode carry out planarization process, expose to electrode, sacrifice layer and the second conductive layer simultaneously, and planarization processes After the second conductive layer be formed as hang oneself from a beam arm.The method that wherein planarization processes can include CMP.
An aspect according to embodiments of the present invention, a pair drive electrode includes that the first drive electrode and second drives electricity Pole, a pair contact electrode includes the first contact electrode and the second contact electrode, and the first drive electrode and first contacts electrode It is positioned at the wherein side of overarm arm, the second drive electrode and the second contact electrode and is positioned at the opposite side of overarm arm, a pair driving electricity Size of gaps between pole with overarm arm is equal to the size of gaps contacted for a pair between electrode and overarm arm.
According to an aspect of the present invention, the thickness of sacrifice layer can be 1-100nm；The material bag of sacrifice layer and insulating barrier Include silicon oxide, silicon nitride or silicon oxynitride.
According to an aspect of the present invention, the material of the first conductive layer and the second conductive layer may include that polysilicon, doping The combination of any one or more in polysilicon, SiGe, SiC, Al, Ti or TiAl.
The present invention, based on existing process conditions and means, devises a kind of lateral type static switching structure, and utilizes The process means of novelty effectively reduces the air gap of micro-nano mechanical switch, reduces threshold voltage.For above-mentioned situation, this Bright combination sacrificial layer technology and CMP (chemistry is dynamo-electric to be ground) technology, devise the technological process of a kind of novelty, solve photoetching skill The art restriction to air gap value.Utilize this invention, the most close within the air gap value that micro-nano mechanical switchs can being narrowed down to 10nm In zero.Size of gaps can depend on the thickness of sacrifice layer, and its ultimate value is determined by sacrifice layer preparation technology, in unconventional process Generally being determined by photoetching process, the process window of the latter is far smaller than the former.
Accompanying drawing explanation
By description to disclosure embodiment referring to the drawings, above-mentioned and other purposes of the disclosure, feature and Advantage will be apparent from, in the accompanying drawings:
Fig. 1 diagrammatically illustrates the schematic diagram of an embodiment micro-nano mechanical switch according to the disclosure.
Fig. 2-7 diagrammatically illustrates and manufactures the micro-nano mechanical shown in Fig. 1 according to embodiment disclosed by the invention and switch each The tangent plane schematic diagram along A-A ' in pilot process.
Detailed description of the invention
Hereinafter, will be described with reference to the accompanying drawings embodiment of the disclosure.However, it should be understood that these descriptions are the most exemplary , and it is not intended to limit the scope of the present disclosure.Additionally, in the following description, eliminate the description to known features and technology, with Avoid unnecessarily obscuring the concept of the disclosure.
Various structural representations according to disclosure embodiment shown in the drawings.These figures are not drawn to scale , wherein in order to understand the purpose of expression, it is exaggerated some details, and some details may be eliminated.Shown in figure Various regions, the shape of layer and the relative size between them, position relationship are only exemplary, are likely to be due to system in reality Make tolerance or technical limitations and deviation, and those skilled in the art have difference according to actually required can additionally design Shape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as positioned at another layer/element " on " time, this layer/element can To be located immediately on this another layer/element, or intermediate layer/element between them, can be there is.If it addition, one towards In one layer/element be positioned at another layer/element " on ", then when turn towards time, this layer/element may be located at this another layer/unit Part D score.
According to embodiment disclosed by the invention, it is provided that a kind of micro-nano mechanical switch and manufacture method thereof, pass through sacrifice layer By overarm arm and between isolate, the most again by sacrifice layer remove thus obtain air gap, owing to the thickness of sacrifice layer can have Effect regulation, the width of air gap also scalable therefore obtained after sacrifice layer is removed, thus avoid by complicated photoetching Technology obtains air gap, reduces technology difficulty.
As it is shown in figure 1, the schematic diagram of a micro-nano mechanical switch 10 for obtaining according to the embodiment of the present invention.This micro-nano Electric mechanical switch 10 is arranged in Semiconductor substrate 100, a preferably also layer insulating 200 on substrate 100.On insulating barrier 200 There is floating overarm arm 410.At least one pair of drive electrode 310 is had to contact electrode 320 with a pair in the both sides of overarm arm 410.Its In, isolated by air gap 500 between overarm arm 410 and drive electrode 310 and contact electrode 320, be positioned at the driving of the same side Electrode 310 is isolated by air gap 500 with contacting electrode 320, between overarm arm 410 and insulating barrier 200 also by air gap 500 every From.Wherein one end of overarm arm 410 connects with taking aim at district 600, takes aim at district 600 and is typically secured in Semiconductor substrate；Overarm arm 410 The other end is near contact electrode 320.
In an embodiment of the present invention, Semiconductor substrate can be monocrystal silicon, polysilicon, SiGe, SiC or other compound half Conductor material, embodiments of the invention are without limitation.Overarm arm 410, drive electrode 310 and contact electrode 320 electrode Material may include that the combination of any one or more in polysilicon, DOPOS doped polycrystalline silicon, SiGe, SiC, Al, Ti or TiAl.Overarm The material of arm 410 and electrode can select identical or different.In a preferred embodiment of the invention, overarm arm 410 He The material of electrode is all polysilicon.The material of insulating barrier 200 can include silicon oxide, silicon nitride or silicon oxynitride, in the present invention A preferred embodiment in, the material of insulating barrier 200 selects SiO2, can be formed by the way of thermal oxide.Air gap big I is thought: 1nm is determined to tens of or even hundreds of nm, its thickness by the growth thickness of sacrifice layer, can be such as 1nm, 10nm or 100nm.
A pair drive electrode 310 includes the first drive electrode and the second drive electrode, contacts electrode 320 with a pair and includes One contact electrode and the second contact electrode.Wherein the first drive electrode and the first contact electrode are positioned at the same side of overarm arm 410, Second drive electrode and the second contact electrode are positioned at the opposite side of overarm arm 410.A pair drive electrode 310 and overarm arm 410 it Between size of gaps equal to a pair contact electrode 320 and overarm arm 410 between size of gaps.
The operation principle of this micro-nano mechanical switch 10: under original state, without current potential between drive electrode 310 and overarm arm 410 Difference, due to the existence of air gap 500, switch is off.When applying to power on between drive electrode 310 and overarm arm 410 After pressure, overarm arm 410 moves to contact electrode 320 direction under the driving of electrostatic force, until contacting with contacting electrode 320, Now switch is in closure state.After removing voltage, the elastic force of overarm arm 410 makes it return to initial position, and switch is again Return to off-state.
The manufacture method switched a preferred embodiment of the present invention micro-nano mechanical below with reference to accompanying drawing 2-7 is carried out in detail Describe in detail bright.
As in figure 2 it is shown, first provide a Semiconductor substrate 100.Semiconductor substrate 100 is preferably monocrystal silicon, it is also possible to Being polysilicon, SiGe, SiC or other composite semiconductor materials, embodiments of the invention are without limitation.Then at quasiconductor Insulating barrier 200 is formed on substrate 100.The insulating barrier formed can be silicon oxide, silicon nitride, silicon oxynitride or other media Material, in a preferred embodiment of the invention, forms SiO on a silicon substrate by the method for thermal oxide2Layer 200.
Then, the first conductive layer 300 is deposited as it is shown on figure 3, be formed on described insulating barrier on described insulating barrier 200, And it is patterned as the electrode needed.The material of the first conductive layer 300 can include polysilicon, DOPOS doped polycrystalline silicon, SiGe, SiC, The combination of any one or more in Al, Ti or TiAl.The method patterning the first conductive layer 300 can be conventional method, example As, the first conductive layer is formed default photoetching agent pattern, then the first conductive layer 300 is performed etching, and finally remove Photoresist.The electrode of needs is become after first conductive layer pattern, including a pair drive electrode and a pair contact electrode, and one To the region between drive electrode and the corresponding cantilever beam to be formed in region between a pair contact electrode.
Then, as shown in Figure 4, whole semiconductor structure deposits one layer of sacrifice layer 700.The thickness of sacrifice layer can be 1nm is determined to tens of or even hundreds of nm, its thickness by the growth thickness of sacrifice layer, such as, can be 1nm, 10nm or 100nm ?..The material of sacrifice layer 700 can be silicon oxide, silicon nitride, silicon oxynitride or other can be fallen by dry etching Material, preferably employs SiO in an embodiment of the present invention2.The size of this electric mechanical switch air gap follow-up is mainly by sacrifice layer 700 Thickness determines, and SiO at present2Growth technique the most ripe, it is possible to growth is less than the SiO of 5nm2Thin film.The most completely may be used The SiO of suitable thickness is grown with size of gaps as required2Thin film.
Then, as it is shown in figure 5, deposit the second conductive layer 400 on sacrifice layer 700.Second conductive layer 400 embeds described one To the region between drive electrode and a pair contact electrode between region, be used for forming overarm arm, material can be polysilicon, The combination of any one or more in DOPOS doped polycrystalline silicon, SiGe, SiC, Al, Ti or TiAl.In an embodiment of the present invention, second lead Electric layer 400 preferably employs polysilicon.
The most as shown in Figure 6, described second conductive layer 400, sacrifice layer 700 and electrode pattern 300 are planarized Process, process until electrode 300, sacrifice layer 700 and the second conductive layer 400 stop planarization after exposing simultaneously.Planarization processes After the second conductive layer 400 be formed as arm 410 of hanging oneself from a beam, electrode 300 also becomes drive electrode 310 and contacts electrode 320.At this In one preferred embodiment of invention, use CMP (cmp) technology to carry out planarization process, be planarized to electrode Below top.
Finally, as it is shown in fig. 7, remaining sacrifice layer 700 is removed by dry etching, so, the overarm eventually formed Arm 410 will be floated on Semiconductor substrate 100, and be positioned at least one pair of drive electrode 310 contact with a pair electrode 320 it Between.A pair drive electrode 310 includes the first drive electrode and the second drive electrode, contacts electrode 320 with a pair and includes that first connects Touched electrode contacts electrode with second.Wherein the first drive electrode and first contact electrode be positioned at overarm arm 410 the same side, second Drive electrode and the second contact electrode are positioned at the opposite side of overarm arm 410.Between a pair drive electrode 310 and overarm arm 410 Size of gaps is equal to the size of gaps between a pair contact electrode 320 and overarm arm 410.
In order to reduce air gap as far as possible, the present invention proposes a kind of technological process, innovatively by CMP and sacrifice layer skill Art combines, and effectively reduces the air gap of micro-nano mechanical switch.
The key point of the art inventions of the present invention is to utilize cmp technology and lateral sacrificial layer technology to form horizontal stroke To the air gap driving micro-nano mechanical to switch, the air gap ultimate value utilizing i-line to be lithographically formed is 500nm, the pole of beamwriter lithography Limit value is then tens nanometer, and the process of the present invention can break through the restriction of photoetching technique, and air gap value is only sacrificed with lateral Layer thickness is relevant, the processes level deposited according to current sacrifice layer, air gap value can be down to a position Nano grade the least In 1nm, it is possible to the performance of micro-nano mechanical switch is greatly improved.
The process technique of present invention design is simple, and use is all quasiconductor/the most frequently used process means in MEMS field, Need not special equipment and exacting terms, it is possible to carry out freely adjusting to the size of air gap and no longer limited by photoetching process System, this invention can obtain the least air gap value, effectively reduces the threshold voltage of electrostatic micro-nano mechanical switch, contributes to further Improve the performance of micro-nano mechanical switch.
In the above description, the ins and outs such as the composition of each layer, etching are not described in detail.But It will be appreciated by those skilled in the art that and can form the layer of required form, region etc. by various technological means.It addition, be Formation same structure, those skilled in the art can be devised by method the most identical with process as described above. Although it addition, respectively describing each embodiment above, but it is not intended that the measure in each embodiment can not be favourable Be used in combination.
Embodiment the most of this disclosure is described.But, the purpose that these embodiments are merely to illustrate that, and It is not intended to limit the scope of the present disclosure.The scope of the present disclosure is limited by claims and equivalent thereof.Without departing from these public affairs The scope opened, those skilled in the art can make multiple replacement and amendment, and these substitute and amendment all should fall in the disclosure Within the scope of.

Claims (13)

1. a micro-nano mechanical switch, including:
Semiconductor substrate；
Insulating barrier, is positioned on described Semiconductor substrate；
It is positioned at the floating overarm arm on insulating barrier；
Being positioned at a pair drive electrode on insulating barrier and a pair contact electrode, one pair of which drive electrode is positioned at the two of overarm arm Side and and overarm arm between isolate by air gap, a pair contact electrode be positioned at overarm arm both sides and with arm and the driving of hanging oneself from a beam Isolated by air gap between electrode.
Micro-nano mechanical the most according to claim 1 switchs, and wherein, the material of overarm arm and electrode includes: polysilicon, doping The combination of any one or more in polysilicon, SiGe, SiC, Al, Ti or TiAl.
Micro-nano mechanical the most according to claim 1 switchs, and wherein, insulating barrier includes silicon oxide, silicon nitride or silicon oxynitride.
Micro-nano mechanical the most according to claim 1 switchs, and wherein, the size of air gap is: 1nm-100nm.
Micro-nano mechanical the most according to claim 1 switchs, and wherein, the two ends of overarm arm are respectively the first end and the second end, Wherein the first Duan Yumao district connects, and anchor district is fixed on insulating barrier, and the second end is near contact electrode.
6. switching according to the micro-nano mechanical one of claim 1 to 5 Suo Shu, wherein, a pair drive electrode includes the first driving electricity Pole and the second drive electrode, a pair contact electrode includes the first contact electrode and the second contact electrode, and the first drive electrode Contact electrode with first and be positioned at the wherein side of overarm arm, and the second drive electrode and the second contact electrode are positioned at overarm arm Opposite side, the size of gaps between a pair drive electrode and overarm arm is big equal to the air gap contacted for a pair between electrode and overarm arm Little.
7. a manufacture method for micro-nano mechanical switch, including:
Semiconductor substrate is provided；
Form insulating barrier on the semiconductor substrate；
On described insulating barrier formed overarm arm and a pair drive electrode and a pair contact electrode, the sidewall of arm of wherein hanging oneself from a beam and Bottom is sacrificed layer and surrounds, a pair drive electrode the both sides of overarm arm and and overarm arm between isolated by sacrifice layer, A pair contact electrode overarm arm both sides and and overarm arm and drive electrode between isolated by sacrifice layer；
Remove described sacrifice layer thus form floating overarm arm, isolated by air gap between a pair drive electrode and overarm arm, Isolated by air gap between a pair contact electrode and overarm arm and a pair drive electrode.
Method the most according to claim 7, wherein, described insulating barrier is formed overarm arm and a pair drive electrode and The step of a pair contact electrode includes:
Described insulating barrier deposits the first conductive layer, and is patterned as the electrode needed, including a pair drive electrode and a pair The corresponding cantilever to be formed in region between contact region and a pair contact electrode between electrode, and a pair drive electrode Beam；
Deposit sacrifice layer on the electrodes；
Depositing the second conductive layer on sacrifice layer, the second conductive layer embeds the region between the pair of drive electrode and a docking Region between touched electrode；
Described second conductive layer, sacrifice layer and electrode are carried out planarization process, same to electrode, sacrifice layer and the second conductive layer Time expose, planarization process after the second conductive layer be formed as hang oneself from a beam arm.
9. according to the method described in claim 7 or 8, wherein, a pair drive electrode includes that the first drive electrode and second drives Electrode, a pair contact electrode includes the first contact electrode and the second contact electrode, and the first drive electrode and first contacts electricity Pole is positioned at the wherein side of overarm arm, the second drive electrode and the second contact electrode and is positioned at the opposite side of overarm arm, a pair driving Size of gaps between electrode with overarm arm is equal to the size of gaps contacted for a pair between electrode and overarm arm.
10., according to the method described in claim 7 or 8, wherein planarization is processed as CMP.
11. according to the method described in claim 7 or 8, and wherein the thickness of sacrifice layer is 1-100nm.
12. according to the method described in claim 7 or 8, wherein the material of sacrifice layer and insulating barrier include silicon oxide, silicon nitride or Silicon oxynitride.
13. methods according to claim 8, wherein the material of the first conductive layer and the second conductive layer includes: polysilicon, mix The combination of any one or more in miscellaneous polysilicon, SiGe, SiC, Al, Ti or TiAl.
CN201610809521.0A 2016-09-07 2016-09-07 A kind of micro-nano mechanical switch and manufacture method thereof Pending CN106298372A (en)

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Application publication date: 20170104