CN106297896A - Storage management method, memorizer memory devices and memorizer control circuit unit - Google Patents

Storage management method, memorizer memory devices and memorizer control circuit unit Download PDF

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CN106297896A
CN106297896A CN201510295063.9A CN201510295063A CN106297896A CN 106297896 A CN106297896 A CN 106297896A CN 201510295063 A CN201510295063 A CN 201510295063A CN 106297896 A CN106297896 A CN 106297896A
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solid element
module
reproducible nonvolatile
active volume
memorizer
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CN106297896B (en
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陈建谋
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Phison Electronics Corp
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Phison Electronics Corp
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Abstract

The present invention provides a kind of storage management method, memorizer memory devices and memorizer control circuit unit.Described storage management method includes: the replacement solid element number of detection reproducible nonvolatile memorizer module.If the described replacement solid element number of described reproducible nonvolatile memorizer module meets pre-conditioned, the active volume of described reproducible nonvolatile memorizer module is adjusted to the second active volume from the first active volume.Thereby, the active volume of reproducible nonvolatile memorizer module can be adjusted by extend the service life of memorizer memory devices.

Description

Storage management method, memorizer memory devices and memorizer control circuit unit
Technical field
The present invention relates to a kind of storage management method, and particularly to a kind of storage management method, deposit Reservoir storage device and memorizer control circuit unit.
Background technology
Digital camera, mobile phone and MP3 player are the rapidest in growth over the years so that disappear The demand storing media is increased by expense person the most rapidly.Due to reproducible nonvolatile memorizer module (example Such as, flash memory) to have data non-volatile, power saving, volume little, and the spy such as mechanical structure Property, so being especially suitable for being built in above-mentioned illustrated various portable multimedia devices.
In general, after using reproducible nonvolatile memorizer module a period of time, can make carbon copies Some physical blocks in formula non-volatile memory module may be damaged.The reason causing damage may It is too high etc. to be that the error rate of data therein is damaged or be stored in hardware.Generally for the entity district damaged The processing mode of block is that the physical blocks with some redundant is to replace this physical blocks damaged.But, if The physical blocks damaged in reproducible nonvolatile memorizer module causes the physical blocks of redundant not too much Foot, then this reproducible nonvolatile memorizer module is just difficult to be further continued for using.
Summary of the invention
The present invention provides a kind of storage management method, memorizer memory devices and memorizer control circuit list Unit, can be adjusted by the active volume of reproducible nonvolatile memorizer module to extend memory storage The service life of device.
One example of the present invention embodiment provides a kind of storage management method, and it is used for controlling duplicative Non-volatile memory module, described storage management method includes: detect described duplicative non-volatile The replacement solid element number of property memory module, wherein said replacement solid element number is answered with described Write in formula non-volatile memory module at least one replacement solid element number relevant, each described in replace Change solid element in order to the damage entity list replacing in described reproducible nonvolatile memorizer module Unit；And if the described replacement solid element number of described reproducible nonvolatile memorizer module meets Pre-conditioned, by the active volume of described reproducible nonvolatile memorizer module from the first active volume Being adjusted to the second active volume, wherein said active volume refers to described type nonvolatile The capacity summation of the multiple available solid element in module, each described available solid element is all not belonging to institute State replacement solid element.
In one example of the present invention embodiment, described second active volume is less than described first active volume.
In one example of the present invention embodiment, described storage management method also includes: detecting The described replacement solid element number stating reproducible nonvolatile memorizer module meets described pre-conditioned Before, it is provided that relevant with described first active volume of described reproducible nonvolatile memorizer module First capacity information gives described host computer system；And described type nonvolatile detected The described replacement solid element number of module meet described pre-conditioned after, it is provided that with described duplicative The second capacity information that described second active volume of non-volatile memory module is relevant gives described main frame system System.
In one example of the present invention embodiment, described storage management method also includes: answer if described The described replacement solid element number writing formula non-volatile memory module meets described pre-conditioned, will not Described reproducible nonvolatile memorizer module is declared as write protection state.
In one example of the present invention embodiment, providing and described type nonvolatile mould Relevant described second capacity information of described second active volume of block give described host computer system step it Before, described storage management method also includes: again by described reproducible nonvolatile memorizer module Power on, or perform power-off and power on simulated operation.
In one example of the present invention embodiment, described storage management method also includes: replace according to described Change the described replacement entity list that solid element number judges in described reproducible nonvolatile memorizer module Whether the described number of unit meets preset number；And if described reproducible nonvolatile memorizer module In the described number of described replacement solid element meet described preset number, it is determined that described duplicative is non- The described replacement solid element number of volatile meets described pre-conditioned.
In one example of the present invention embodiment, by the institute of described reproducible nonvolatile memorizer module State the step that active volume is adjusted to described second active volume from described first active volume to include: from institute State in the described available solid element of reproducible nonvolatile memorizer module and select at least one； And selected available solid element is associated as described replacement solid element.
In one example of the present invention embodiment, by the institute of described reproducible nonvolatile memorizer module State the step that active volume is adjusted to described second active volume from described first active volume to include: receive First operational order；According to described first operational order by described reproducible nonvolatile memorizer module Described active volume be adjusted to described second active volume from described first active volume；And reply right The operation failure message of the first operational order described in Ying Yu.
In one example of the present invention embodiment, described storage management method also includes: provide with described Relevant the second capacity information of described second active volume of reproducible nonvolatile memorizer module is to institute State host computer system；Receive the second operational order；And according to described second operational order, send and format Operational order sequence formats described reproducible nonvolatile memorizer module with instruction, wherein formats After described reproducible nonvolatile memorizer module there is described second active volume.
Another example of the present invention embodiment provides a kind of memorizer memory devices, and it includes connecting interface list Unit, reproducible nonvolatile memorizer module and memorizer control circuit unit.Described connection interface list Unit is electrically connected to host computer system.Described memorizer control circuit unit is electrically connected to described connection Interface unit and described reproducible nonvolatile memorizer module.Described memorizer control circuit unit is used To detect the replacement solid element number of described reproducible nonvolatile memorizer module.Described replacement is real Body unit number and at least one replacement solid element in described reproducible nonvolatile memorizer module Number is relevant.Each described replacement solid element is in order to replace described type nonvolatile mould Damage solid element in block.If the described replacement entity of described reproducible nonvolatile memorizer module Number of unit meets described pre-conditioned, and described memorizer control circuit unit is also in order to make carbon copies described The active volume of formula non-volatile memory module is adjusted to the second active volume from the first active volume.Institute State active volume and refer to multiple available solid element in described reproducible nonvolatile memorizer module Capacity summation.Each described available solid element is all not belonging to described replacement solid element.
In one example of the present invention embodiment, described second active volume is less than described first active volume.
In one example of the present invention embodiment, described type nonvolatile mould detected The described replacement solid element number of block meet described pre-conditioned before, described memorizer control circuit list Unit is also in order to provide relevant with described first active volume of described reproducible nonvolatile memorizer module The first capacity information give described host computer system.Described type nonvolatile mould detected The described replacement solid element number of block meet described pre-conditioned after, described memorizer control circuit list Unit is also in order to provide relevant with described second active volume of described reproducible nonvolatile memorizer module One second capacity information give described host computer system.
In one example of the present invention embodiment, if the institute of described reproducible nonvolatile memorizer module Stating replacement solid element number and meet described pre-conditioned, described memorizer control circuit unit is not also in order to Described reproducible nonvolatile memorizer module is declared as write protection state.
In one example of the present invention embodiment, providing and described type nonvolatile mould Before relevant described second capacity information of described second active volume of block gives described host computer system, described Memorizer control circuit unit also in order to again described reproducible nonvolatile memorizer module is powered on, Or perform power-off to power on simulated operation.
In one example of the present invention embodiment, described memorizer control circuit unit is also in order to according to described Replace solid element number and judge the described replacement entity in described reproducible nonvolatile memorizer module Whether the described number of unit meets preset number.If in described reproducible nonvolatile memorizer module The described number of described replacement solid element meet described preset number, described memorizer control circuit list Unit is also in order to judge that the described replacement solid element number of described reproducible nonvolatile memorizer module accords with Close described pre-conditioned.
In one example of the present invention embodiment, described memorizer control circuit unit is by described duplicative The described active volume of non-volatile memory module is adjusted to described second from described first active volume can Include with the operation of capacity: from the described available entity list of described reproducible nonvolatile memorizer module Unit selects at least one；And selected available solid element is associated as described replacement entity Unit.
In one example of the present invention embodiment, described memorizer control circuit unit is by described duplicative The described active volume of non-volatile memory module is adjusted to described second from described first active volume can Include with the operation of capacity: receive the first operational order；Answer described according to described first operational order The described active volume writing formula non-volatile memory module is adjusted to described from described first active volume Two active volumes；And reply the operation failure message corresponding to described first operational order.
In one example of the present invention embodiment, described memorizer control circuit unit is also in order to provide and institute State the second relevant capacity information of described second active volume of reproducible nonvolatile memorizer module to Described host computer system.Described memorizer control circuit unit is also in order to receive the second operational order.Described deposit Memory control circuit unit also in order to according to described second operational order, sends format manipulation job sequence Described reproducible nonvolatile memorizer module is formatted with instruction.Described after described formatting is answered The formula non-volatile memory module of writing has described second active volume.
Another example of the present invention embodiment provides a kind of memorizer control circuit unit, and it can for control Manifolding formula non-volatile memory module, described memorizer control circuit unit includes HPI, storage Device interface and memory management circuitry.Described HPI is electrically connected to host computer system.Described deposit Memory interface is electrically connected to described reproducible nonvolatile memorizer module.Described memorizer pipe Reason circuit is electrically connected to described HPI and described memory interface.Described memory management circuitry is used To detect the replacement solid element number of described reproducible nonvolatile memorizer module.Described replacement is real Body unit number and at least one replacement solid element in described reproducible nonvolatile memorizer module Number is relevant.Each described replacement solid element is in order to replace described type nonvolatile mould Damage solid element in block.If the described replacement entity of described reproducible nonvolatile memorizer module Number of unit meets described pre-conditioned, and described memory management circuitry is also in order to by non-for described duplicative The active volume of volatile is adjusted to the second active volume, Qi Zhongsuo from the first active volume State active volume and refer to multiple available solid element in described reproducible nonvolatile memorizer module Capacity summation.Each described available solid element is all not belonging to described replacement solid element.
In one example of the present invention embodiment, described second active volume is less than described first active volume.
In one example of the present invention embodiment, described type nonvolatile mould detected The described replacement solid element number of block meet described pre-conditioned before, described memory management circuitry is also In order to provide relevant with described first active volume of described reproducible nonvolatile memorizer module One capacity information gives described host computer system.Described reproducible nonvolatile memorizer module detected Described replacement solid element number meet described pre-conditioned after, described memory management circuitry also in order to Relevant with described second active volume of described reproducible nonvolatile memorizer module second is provided to hold Amount information gives described host computer system
In one example of the present invention embodiment, if the institute of described reproducible nonvolatile memorizer module Stating replacement solid element number and meet described pre-conditioned, described memory management circuitry is not also in order to by institute State reproducible nonvolatile memorizer module and be declared as write protection state.
In one example of the present invention embodiment, providing and described type nonvolatile mould Before relevant described second capacity information of described second active volume of block gives described host computer system, described Memory management circuitry also in order to again described reproducible nonvolatile memorizer module is powered on, or Perform power-off to power on simulated operation.
In one example of the present invention embodiment, described memory management circuitry is also in order to according to described replacement Solid element number judges the described replacement solid element in described reproducible nonvolatile memorizer module Described number whether meet preset number.If the institute in described reproducible nonvolatile memorizer module State replace solid element described number meet described preset number, described memory management circuitry also in order to Judge that the described replacement solid element number of described reproducible nonvolatile memorizer module meets described pre- If condition.
In one example of the present invention embodiment, described memory management circuitry by non-for described duplicative easily The described active volume of the property lost memory module is adjusted to the described second available appearance from described first active volume The operation of amount includes: from the described available solid element of described reproducible nonvolatile memorizer module Select at least one；And selected available solid element is associated as described replacement solid element.
In one example of the present invention embodiment, described memory management circuitry by non-for described duplicative easily The described active volume of the property lost memory module is adjusted to the described second available appearance from described first active volume The operation of amount includes: receive the first operational order；According to described first operational order by described duplicative The described active volume of non-volatile memory module is adjusted to described second from described first active volume can Use capacity；And reply the operation failure message corresponding to described first operational order.
In one example of the present invention embodiment, described memory management circuitry also in order to provide with described can The second capacity information that described second active volume of manifolding formula non-volatile memory module is relevant is given described Host computer system.Described memory management circuitry is also in order to receive the second operational order.Described memorizer manages Circuit also in order to according to described second operational order, sends format manipulation job sequence to indicate formatting Described reproducible nonvolatile memorizer module.Described duplicative after described formatting is non-volatile Memory module has described second active volume.
Based on above-mentioned, the present invention can detect the replacement entity of reproducible nonvolatile memorizer module Number of unit meet some pre-conditioned time, adjust the available of reproducible nonvolatile memorizer module Capacity.Thereby, the service life of memorizer memory devices can be extended.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate Accompanying drawing is described in detail below.
Accompanying drawing explanation
Fig. 1 is host computer system shown by one example of the present invention embodiment and the showing of memorizer memory devices It is intended to；
Fig. 2 is the computer shown by one example of the present invention embodiment, input/output device and memorizer storage The schematic diagram of cryopreservation device；
Fig. 3 is host computer system shown by one example of the present invention embodiment and the showing of memorizer memory devices It is intended to；
Fig. 4 is the schematic block diagram illustrating the memorizer memory devices shown in Fig. 1；
Fig. 5 is the reproducible nonvolatile memorizer module shown by one example of the present invention embodiment Schematic block diagram；
Fig. 6 is the schematic diagram of the memory cell array shown by one example of the present invention embodiment；
Fig. 7 is the summary square of the memorizer control circuit unit shown by one example of the present invention embodiment Figure；
Fig. 8 is the management type nonvolatile mould shown by one example of the present invention embodiment The schematic diagram of block；
Fig. 9 be shown by one example of the present invention embodiment to replace the replacing damaged entity of solid element The schematic diagram of unit；
Figure 10 is the adjustment type nonvolatile shown by one example of the present invention embodiment The schematic diagram of the active volume of module；
Figure 11 is the flow chart of the storage management method shown by one example of the present invention embodiment.
Description of reference numerals:
10: memorizer memory devices；
11: host computer system；
12: computer；
122: microprocessor；
124: random access memory；
126: system bus；
128: data transmission interface；
13: input/output device；
21: mouse；
22: keyboard；
23: display；
24: printer；
25:U dish；
26: memory card；
27: solid state hard disc；
31: digital camera；
32:SD card；
33:MMC card；
34: memory stick；
35:CF card；
36: embedded storage device；
402: connect interface unit；
404: memorizer control circuit unit；
406: reproducible nonvolatile memorizer module；
502: memory cell array；
504: character line control circuit；
506: bit line control circuit；
508: row decoder；
510: data input/output buffer；
512: control circuit；
602: memory element；
604: bit line；
606: character line；
608: common source line；
612,614: transistor；
702: memory management circuitry；
704: HPI；
706: memory interface；
708: error checking and correcting circuit；
710: buffer storage；
712: electric power management circuit；
800 (0)～800 (R): entity erased cell；
810 (0)～810 (D): logical block；
802: storage area；
806: system area；
901 (0)～901 (N+1), 1001 (0)～1001 (N): available solid element；
902 (0)～902 (M), 1002 (0)～1002 (Q): replace solid element；
903 (0), 1003 (0)～1003 (M): damage solid element；
S1101～S1107: step.
Detailed description of the invention
It is said that in general, memorizer memory devices (also referred to as, memory storage system) includes that duplicative is non-volatile Property memory module (rewritable non-volatile memory module) with controller (also referred to as, control electricity Road).Being commonly stored device storage device is to be used together with host computer system, so that data can be write by host computer system Enter to memorizer memory devices or from memorizer memory devices, read data.
Fig. 1 is host computer system shown by one example of the present invention embodiment and the showing of memorizer memory devices It is intended to.Fig. 2 is the computer shown by one example of the present invention embodiment, input/output device and memorizer The schematic diagram of storage device.
Refer to Fig. 1, host computer system 11 generally comprises computer 12 and input/output (input/output, I/O) Device 13.Computer 12 include microprocessor 122, random access memory (random access memory, RAM) 124, system bus 126 and data transmission interface 128.Input/output device 13 includes such as Fig. 2 Mouse 21, keyboard 22, display 23 and printer 24.It will be appreciated that the dress shown in Fig. 2 Putting unrestricted input/output device 13, input/output device 13 can also include other devices.
In an exemplary embodiment, memorizer memory devices 10 is by data transmission interface 128 and main frame Other elements of system 11 are electrically connected with.By microprocessor 122, random access memory 124 with defeated Enter/running of output device 13 can write data into memorizer memory devices 10 or fill from memory storage Put reading data in 10.Such as, memorizer memory devices 10 can be USB flash disk 25 as shown in Figure 2, Memory card 26 or the duplicative non-volatile memories of solid state hard disc (Solid State Drive, SSD) 27 grades Device storage device.
Fig. 3 is host computer system shown by one example of the present invention embodiment and the showing of memorizer memory devices It is intended to.
It is said that in general, host computer system 11 is for coordinating to store number with memorizer memory devices 10 substantially According to any system.Although in this exemplary embodiment, host computer system 11 is to explain with computer system, But, in another exemplary embodiment, host computer system 11 can be digital camera, camera, communicator, The system such as audio player or video player.Such as, it is digital camera (camera) 31 in host computer system Time, type nonvolatile storage device is then by its SD card 32 used, mmc card 33, memory stick (memory stick) 34, CF card 35 or embedded storage device 36 (as shown in Figure 3). Embedded storage device 36 includes embedded multi-media card (Embedded MMC, eMMC).It is worth mentioning , embedded multi-media card is directly to be electrically connected on the substrate of host computer system.
Fig. 4 is the schematic block diagram illustrating the memorizer memory devices shown in Fig. 1.
Refer to Fig. 4, memorizer memory devices 10 includes connecting interface unit 402, memorizer controls electricity Road unit 404 and reproducible nonvolatile memorizer module 406.
In this exemplary embodiment, connecting interface unit 402 is to be compatible to Serial Advanced Technology Attachment (Serial Advanced Technology Attachment, SATA) standard.However, it is necessary to be appreciated that, the present invention Being not limited to this, connecting interface unit 402 can also be to meet parallel advanced technology adnexa (Parallel Advanced Technology Attachment, PATA) standard, Institute of Electrical and Electric Engineers (Institute Of Electrical and Electronic Engineers, IEEE) 1394 standards, high speed peripheral component interlinkage (Peripheral Component Interconnect Express, PCI Express) standard, USB (universal serial bus) (Universal Serial Bus, USB) standard, secure digital (Secure Digital, SD) interface standard, superelevation A speed generation (Ultra High Speed-I, UHS-I) interface standard, ultrahigh speed secondary (Ultra High Speed-II, UHS-II) interface standard, memory stick (Memory Stick, MS) interface standard, Multi Media Card (Multi Media Card, MMC) interface standard, enter formula Multi Media Card (Embedded Multimedia Card, eMMC) interface standard, general flash memory (Universal Flash Storage, UFS) interface mark Standard, compact flash (Compact Flash, CF) interface standard, ide interface (Integrated Device Electronics, IDE) standard or other be suitable for standard.Connecting interface unit 402 can be with storage Device control circuit unit 404 is encapsulated in a chip, or connection interface unit 402 is to be laid in one Comprise outside the chip of memorizer control circuit unit 404.
Memorizer control circuit unit 404 is in order to perform with hardware type or multiple gates of firmware formula implementation Or control instruction and according to the instruction of host computer system 11 in reproducible nonvolatile memorizer module 406 In carry out the write of data, running of reading and erase etc..
Reproducible nonvolatile memorizer module 406 is electrically connected to memorizer control circuit unit 404 and in order to store the data that host computer system 11 is write.Reproducible nonvolatile memorizer module 406 can be single-order memory element (Single Level Cell, SLC) NAND type flash memory module (that is, the flash memory module of 1 Bit data can be stored in one memory element), multi-level cell memory (Multi Level Cell, MLC) NAND type flash memory module (that is, can store in one memory element The flash memory module of 2 Bit datas), Complex Order memory element (Triple Level Cell, TLC) NAND type flash memory module (that is, can store the fast of 3 Bit datas in one memory element Flash memory module), other flash memory module or other there is the memory module of identical characteristics.
Fig. 5 is the reproducible nonvolatile memorizer module shown by one example of the present invention embodiment Schematic block diagram.Fig. 6 is the schematic diagram of the memory cell array shown by one example of the present invention embodiment.
Refer to Fig. 5, reproducible nonvolatile memorizer module 406 include memory cell array 502, Character line control circuit 504, bit line control circuit 506, row decoder (column decoder) 508, Data input/output buffer 510 and control circuit 512.
In this exemplary embodiment, memory cell array 502 can include the multiple storages storing data Unit 602, multiple selection grid leak pole (select gate drain, SGD) transistor 612 and multiple selection grid sources Pole (select gate source, SGS) transistor 614 and connect a plurality of bit line of these a little memory element 604, a plurality of character line 606 and common source line 608 (as shown in Figure 6).Memory element 602 is with battle array Row mode (or mode of three-dimensional stacking) is arranged on the cross point of bit line 604 and character line 606.When from When memorizer control circuit unit 404 receives write instruction or reads instruction, control circuit 512 can be controlled Character line control circuit 504 processed, bit line control circuit 506, row decoder 508, data input/output Buffer 510 writes data to memory cell array 502 or reads number from memory cell array 502 According to, wherein character line control circuit 504 is in order to control the voltage bestowed to character line 606, bit line traffic control Circuit 506 processed is in order to control the voltage bestowed to bit line 604, and row decoder 508 is according in instruction Row address is to select corresponding bit line, and data input/output buffer 510 is configured to temporarily store data.
Each memory element in reproducible nonvolatile memorizer module 406 is with critical voltage Change and store one or more bit.Specifically, the control grid (control gate) of each memory element And there is an electric charge capture layer between passage.By bestowing a write voltage to control gate, thus it is possible to vary Electric charge mends the amount of electrons catching layer, thus changes the critical voltage of memory element.This changes critical voltage Program is also referred to as " write the data to memory element " or " sequencing memory element ".Along with critical electricity The change of pressure, each memory element of memory cell array 502 has multiple storing state.And lead to Cross read voltage and may determine which storing state is memory element be belonging to, thereby obtain memory element institute One or more bit stored.
Fig. 7 is the summary square of the memorizer control circuit unit shown by one example of the present invention embodiment Figure.
Refer to Fig. 7, memorizer control circuit unit 404 includes that memory management circuitry 702, main frame connect Mouth 704, memory interface 706 and error checking and correcting circuit 708.
Memory management circuitry 702 is in order to control the overall operation of memorizer control circuit unit 404.Tool For body, memory management circuitry 702 has multiple control instruction, and at memorizer memory devices 10 During running, these a little control instructions can be performed to carry out the write of data, running of reading and erase etc..With During the operation of lower explanation memory management circuitry 702, it is equal to memorizer control circuit unit 404 is described Operation.
In this exemplary embodiment, the control instruction of memory management circuitry 702 is to carry out implementation with firmware formula. Such as, memory management circuitry 702 has microprocessor unit (not shown) and read only memory (not shown), And these a little control instructions are to be programmed so far in read only memory.When memorizer memory devices 10 operates Time, these a little control instructions can be performed to carry out the write of data, read and erase by microprocessor unit Deng running.
In another exemplary embodiment, the control instruction of memory management circuitry 702 can also program pattern Formula is stored in the specific region of reproducible nonvolatile memorizer module 406 (such as, in memory module It is exclusively used in the system area of storage system data) in.Additionally, memory management circuitry 702 has microprocessor Unit (not shown), read only memory (not shown) and random access memory (not shown).Particularly, this Read only memory has boot code (boot code), and when memorizer control circuit unit 404 is enabled Time, microprocessor unit can first carry out this boot code and will be stored in type nonvolatile mould Control instruction in block 406 is loaded in the random access memory of memory management circuitry 702.Afterwards, Microprocessor unit can operate these a little control instructions to carry out the write of data, running of reading and erase etc..
Additionally, in another exemplary embodiment, the control instruction of memory management circuitry 702 can also one Hardware type carrys out implementation.Such as, memory management circuitry 702 includes microcontroller, solid element management electricity Erase circuit and data processing circuit in road, memorizer write circuit, memory reading circuitry, memorizer. Solid element management circuit, memorizer write circuit, memory reading circuitry, memorizer erase circuit with Data processing circuit is electrically connected to microcontroller.Wherein, solid element management circuit can in order to manage The entity erased cell of manifolding formula non-volatile memory module 406；Memorizer write circuit is in order to can Manifolding formula non-volatile memory module 406 assigns write instruction sequence to write data into duplicative In non-volatile memory module 406；Memory reading circuitry is in order to duplicative non-volatile memories Device module 406 assigns reading job sequence to read from reproducible nonvolatile memorizer module 406 Data；Memorizer erases circuit in order to reproducible nonvolatile memorizer module 406 is assigned finger of erasing Make sequence data to be erased from reproducible nonvolatile memorizer module 406；And data process electricity Road is intended to write to the data of reproducible nonvolatile memorizer module 406 and from making carbon copies in order to process The data read in formula non-volatile memory module 406.Write instruction sequence, read job sequence and Job sequence of erasing can distinctly include one or more procedure code or order code and in order to indicate duplicative non- Volatile 406 performs corresponding write, operation of reading and erase etc..
HPI 704 is electrically connected to memory management circuitry 702 and in order to receive and to identify master Instruction that machine system 11 is transmitted and data.It is to say, the instruction that transmitted of host computer system 11 and number According to being sent to memory management circuitry 702 by HPI 704.In this exemplary embodiment, HPI 704 is to be compatible to SATA standard.However, it is necessary to be appreciated that and the invention is not restricted to this, HPI 704 can also be to be compatible to PATA standard, IEEE 1394 standard, PCI Express mark Standard, USB standard, SD standard, UHS-I standard, UHS-II standard, MS standard, MMC standard, EMMC standard, UFS standard, CF standard, IDE standard or other data transmission standards being suitable for.
Memory interface 706 is electrically connected to memory management circuitry 702 and can make carbon copies in order to access Formula non-volatile memory module 406.It is to say, be intended to write to type nonvolatile The data of module 406 can be converted to reproducible nonvolatile memorizer module via memory interface 706 406 receptible forms.Specifically, if memory management circuitry 702 duplicative to be accessed is non- Volatile 406, memory interface 706 can transmit the job sequence of correspondence.These instructions Sequence can include one or more signal, or the data in bus.Such as, in reading job sequence, The information such as the identification code of reading, memorizer address can be included.
Error checking and correcting circuit 708 are electrically connected to memory management circuitry 702 and in order to hold Row error checking and correction program are to guarantee the correctness of data.Specifically, memory management circuitry is worked as 702 when receiving write instruction from host computer system 11, and error checking can be corresponding with correcting circuit 708 The data of this write instruction produce corresponding error correcting code (error correcting code, ECC) and/or mistake Check code (error detecting code, EDC), and memory management circuitry 702 by mistake can this writes by correspondence The data entering instruction write non-volatile to duplicative with corresponding error correcting code and/or error checking code In property memory module 406.Afterwards, deposit from duplicative is non-volatile when memory management circuitry 702 Error correcting code corresponding to these data and/or mistake inspection can be read when memory modules 406 reads data simultaneously Look into code, and error checking can be right according to this error correcting code and/or error checking code with correcting circuit 708 The data read perform error checking and correction program.
In an exemplary embodiment, memorizer control circuit unit 404 also include buffer storage 710 with Electric power management circuit 712.Buffer storage 710 be electrically connected to memory management circuitry 702 and It is configured to temporarily store and comes from data and the instruction of host computer system 11 or come from duplicative non-volatile memories The data of device module 406.Electric power management circuit 712 is electrically connected to memory management circuitry 702 also And in order to control the power supply of memorizer memory devices 10.
Fig. 8 is the management type nonvolatile mould shown by one example of the present invention embodiment The schematic diagram of block.It will be appreciated that be described herein reproducible nonvolatile memorizer module 406 During the running of entity erased cell, with the word such as " selection ", " packet ", " division ", " association " Carrying out application entity erased cell is concept in logic.It is to say, type nonvolatile The physical location of the entity erased cell of module is not changed, but non-volatile to duplicative in logic The entity erased cell of memory module operates.
The memory element of reproducible nonvolatile memorizer module 406 can constitute multiple entity program list Unit, and these a little entity program unit can constitute multiple entity erased cell.Specifically, same Memory element on character line can form one or more entity program unit.If each memory element can Store the bit of more than 2, then the entity program unit on same character line at least can be classified as Lower entity program unit and upper entity program unit.Such as, the minimum effective bit of a memory element (Least Significant Bit, LSB) is belonging to lower entity program unit, and a memory element is High significant bit (Most Significant Bit, MSB) is belonging to entity program unit.In general, In MLC NAND type flash memory, the writing speed of lower entity program unit can be more than upper reality The writing speed of body programmed cell, or the reliability of lower entity program unit is above entity program Change the reliability of unit.In this exemplary embodiment, entity program unit is the minimum unit of sequencing. That is, entity program unit is the minimum unit of write data.Such as, entity program unit is entity The page or entity fan (sector).If entity program unit is physical page, then each entity program Change unit and generally include data bit district and redundancy ratio special zone.Data bit district comprises multiple entity fan, uses To store the data of user, and redundancy ratio special zone is in order to data (such as, the error correction of stocking system Code).In this exemplary embodiment, data bit district comprises 32 entities fan, and an entity fan is big Little is 512 bit groups (byte, B).But, in other exemplary embodiment, data bit district also can wrap Containing 8,16 or number more or less of entity fan, the present invention be not limiting as entity fan size with And number.On the other hand, entity erased cell is the least unit erased.That is, each entity is erased list Unit's memory element being erased in the lump containing minimal amount.Such as, entity erased cell is physical blocks.
Refer to Fig. 8, memory management circuitry 702 can be by reproducible nonvolatile memorizer module 406 Entity erased cell 800 (0)～800 (R) be logically divided into multiple region, for example, storage area 802 with System area 806.
The entity erased cell of storage area 802 is to store the data from host computer system 11.Storage area Valid data and invalid data can be stored in 802.Such as, a valid data are deleted when host computer system Time, deleted data may also be previously stored in storage area 802, but can be marked as invalid data. Do not store the most idle (spare) entity erased cell of entity erased cell of valid data.Such as, It is erased later entity erased cell and will become idle entity erased cell.Additionally, there is storage effectively The entity erased cell of data is also referred to as non-idle (non-spare) entity erased cell.
The entity erased cell of system area 806 is to record system data, and wherein this system data includes Manufacturer and model, the entity erased cell number of memory chip, each entity about memory chip The entity program unit number etc. of erased cell.Additionally, the entity of storage area 802 and system area 806 is smeared Can be different according to different memorizer specifications except the quantity of unit.
Memory management circuitry 702 meeting configuration logic unit 810 (0)～810 (D) is to map to storage area 802 In entity erased cell 800 (0)～800 (A).Such as, in this exemplary embodiment, host computer system 11 It is to access the data in storage area 802, therefore, each logical block by logical bit address 810 (0)～810 (D) refer to a logical bit address.Additionally, in an exemplary embodiment, each logic list Unit 810 (0)～810 (D) may also mean that logic fan, logical order unit, a logic are smeared Form except unit or by multiple continuous print logical bit address.Each logical block 810 (0)～810 (D) is to reflect It is incident upon one or more solid element.In this exemplary embodiment, a solid element refers to that an entity is smeared Except unit.But, in another exemplary embodiment, solid element can also be an entity address, One entity fan, an entity program unit or be made up of multiple continuous print entity address, this Bright it is not any limitation as.Mapping between logical block and solid element can be closed by memory management circuitry 702 System is recorded at least one logic-entity mapping.When host computer system 11 is intended to read from memorizer memory devices 10 When fetching data or write data to memorizer memory devices 10, memory management circuitry 702 can be patrolled according to this Volume-entity mapping performs the data access for memorizer memory devices 10.
In this exemplary embodiment, storage area 802 includes multiple available solid element and at least one replacement Solid element.Available solid element is currently available to store valid data and/or the entity list of invalid data Unit.Replace solid element to be used to replace the solid element damaged in storage area 802 or system area 806. The solid element damaged hereinafter also referred to damages solid element.In general, at memorizer memory devices 10 When dispatching from the factory, available solid element distinctly meets a preferred number with replacing solid element.Store up at memorizer In the running of cryopreservation device 10, available solid element is then can be dynamically with the replacement other number of solid element Change.Such as, if some the available solid element in storage area 802 damages, then in storage area 802 A replacement solid element can be selected to replace this and damage solid element.It is to say, be selected to Replace this replacement solid element damaging solid element and can become a new available solid element.Additionally, If some solid element in system area 806 damages, then in storage area 802 replaces entity list Unit can also be selected to replace this and damages solid element and be associated to system area 806.
In general, if some memorizer memory devices is replaced the number deficiency of solid element, such as, The number replacing solid element is less than a preset number, then this memorizer memory devices can be declared to be write Protection (write protect) state, and data cannot be write again.Such as, this preset number is " 1 ".So And, such setting may shorten the service life of memorizer memory devices.Reason is, in write Under guard mode, memorizer memory devices will not receive and process any in addition to reading instruction Operational order.Such as, under write protection state, memorizer memory devices cannot perform the write of data Operation and the format manipulation of memorizer memory devices.
In this exemplary embodiment, if storage area 802 is replaced the number deficiency of solid element, then store Originally being used for storing at least the one of data in district 802 can use solid element can also be associated as replacing entity Unit, thus extend the service life of memorizer memory devices.If some in storage area 802 can use Solid element is associated as replacing solid element, then this entity erased cell stores being temporarily used to Data, until this entity erased cell is used to replace certain in storage area 802 or system area 806 again Till one is damaged solid element.
In this exemplary embodiment, memory management circuitry 702 can provide non-volatile with duplicative and deposit The capacity information that one active volume (the hereinafter also referred to first active volume) of memory modules 406 is relevant is (following Also referred to as the first capacity information) give host computer system 11.Reproducible nonvolatile memorizer module 406 can A capacity summation of multiple available solid elements in storage area 802 is referred to capacity.Such as, each Available solid element all has an active volume, and this capacity summation is the summation of these a little active volumes.At this model In example embodiment, an available solid element refers to an entity erased cell, therefore an available entity list The active volume of unit can be equal to the capacity (such as, 1024 × 1024 kilobit group) of an entity erased cell. In other exemplary embodiment, a solid element may also mean that an entity address, an entity Fan, an entity program unit or be made up of multiple continuous print entity address, therefore one is available real The active volume of body unit can also be equal to an entity address, entity fan, an entity program Unit or the capacity of multiple continuous print entity address, the present invention is not any limitation as.Additionally, each The active volume of available solid element may identical being likely to differ.Such as, in an exemplary embodiment, If multiple solid elements have different size/capacity in storage area 802, then multiple in storage area 802 can Also can be different by the active volume of solid element.In this exemplary embodiment, it is used for calculating this active volume The available solid element of summation comprise all of available solid element in storage area 802.At another example In embodiment, the available solid element of the summation for calculating this active volume only comprises in storage area 802 Partly not all available solid element.
But this first capacity information of host computer system 11 carrys out synchronized update type nonvolatile mould The active volume of block 406.Such as, if this first capacity information indicates, current duplicative is non-volatile to be deposited The active volume of memory modules 406 is " 80G ", then host computer system 11 can note down down this information to carry out after The continuous data access management for reproducible nonvolatile memorizer module 406.Such as, if main frame system System 11 currently stores the size of data of the data to reproducible nonvolatile memorizer module 406 and reaches " 80G ", then host computer system 11 can judge the active volume of reproducible nonvolatile memorizer module 406 Not enough and stop storing to reproducible nonvolatile memorizer module 406 other data.
In the operating process of memorizer memory devices 10, some available solid element meeting in storage area 802 Damage, cause the number damaging solid element to increase.If one is damaged solid element and occurs, then one is replaced Change solid element can be used to replace this damage solid element, cause the number replacing solid element to reduce.
Fig. 9 be shown by one example of the present invention embodiment to replace the replacing damaged entity of solid element The schematic diagram of unit.
Refer to Fig. 9, it is assumed that storage area 802 originally comprised available solid element 901 (0)～901 (N) and Replace solid element 902 (0)～902 (M).If available solid element 901 (0) damages, such as, available entity Unit 901 (0) becomes damage solid element 903 (0), then replace solid element 902 (0) and can be used to replace Damage the available solid element 901 (N+1) that solid element 903 (0) becomes new.Meanwhile, solid element is replaced Number subtract " 1 ", remaining replace solid element 902 (1)～902 (M).Replace real with one through constantly Body unit is replaced one and is damaged solid element, then the number replacing solid element can constantly reduce.At this In exemplary embodiment, N Yu M is positive integer, and M is less than N.But, implement at another example In example, M can also equal to or more than N.
In this exemplary embodiment, memory management circuitry 702 can detect duplicative non-volatile memories The replacement solid element number of device module 406.It is non-volatile with duplicative that this replaces solid element number The number of at least one replacement solid element in memory module 406 is relevant.This at least one replacement entity list The number of unit refers to replace current total of solid element in reproducible nonvolatile memorizer module 406 Number.This replaces solid element number can be according in reproducible nonvolatile memorizer module 406 At least one number replacing solid element sets.Such as, this replaces solid element number can be to answer Write at least in formula non-volatile memory module 406 and replace the number of solid element itself.Such as, If the sum replacing solid element current in reproducible nonvolatile memorizer module 406 is " 5 ", Then this replaces solid element number can be " 5 ".Or, this replaces solid element number can also be root Perform according to the number of at least one replacement solid element in reproducible nonvolatile memorizer module 406 One logical operations and obtain.
It is pre-conditioned that memory management circuitry 702 can judge whether this replacement solid element number meets one. Such as, according to this replacement solid element number, memory management circuitry 702 can judge that duplicative is non- Whether the number of at least one replacement solid element in volatile 406 meets a present count Mesh.If the number symbol of at least one replacement solid element in reproducible nonvolatile memorizer module 406 Closing this preset number, memory management circuitry 702 can judge that this replaces solid element number and meets default bar Part.In this exemplary embodiment, this preset number e.g. " 0 ".It is to say, implement at this example In example, if the sum etc. of all of replacement solid element in reproducible nonvolatile memorizer module 406 In " 0 ", memory management circuitry 702 can detect reproducible nonvolatile memorizer module 406 Replace solid element number and meet pre-conditioned.Otherwise, if reproducible nonvolatile memorizer module 406 In at least one replacement solid element number do not meet preset number, such as, duplicative is non-volatile In memory module 406, the sum of all of replacement solid element is more than " 0 ", then memory management circuitry 702 can judge that the replacement solid element number of reproducible nonvolatile memorizer module 406 does not meets pre- If condition.But, in another exemplary embodiment, this preset number can also be greater than any of " 0 " Integer, such as, " 1 ", " 2 ", " 3 ", " 4 " or bigger, the present invention is not any limitation as.
In an exemplary embodiment, each available solid element all may correspond to (or, map to) At least one of logical block 810 (0)～810 (D).The summation meeting of the active volume of available solid element Total capacity equal to the logical block 810 (0)～810 (D) being currently configured.If the sum quilt of available solid element Change, then sum and/or the total capacity of logical block 810 (0)～810 (D) also can be changed accordingly.Such as, If available solid element is associated as replacing solid element, then its of logical block 810 (0)～810 (D) One of may be rejected or ignore, thus maintain the active volume of available solid element and be currently configured The total capacity of logical block consistent.
It is noted that in an exemplary embodiment, if type nonvolatile being detected The replacement solid element number of module 406 meets pre-conditioned, and memory management circuitry 702 can't be by Memorizer memory devices 10 is declared as write protection state.Such as, detecting that duplicative is non-volatile The replacement solid element number of memory module 406 meet pre-conditioned after, memory management circuitry 702 Still can receive and process the various operational from host computer system 11 to instruct.But, except in order to from can Manifolding formula non-volatile memory module 406 reads outside the reading instruction of data, react on and received Remaining operational order arrived, memory management circuitry 702 all can reply operation failure message to host computer system 11。
Replacement solid element number according to reproducible nonvolatile memorizer module 406 meets default bar Part, memory management circuitry 702 can be by the active volume of reproducible nonvolatile memorizer module 406 It is adjusted to another active volume (the hereinafter also referred to second active volume) from above-mentioned first active volume.At this model In example embodiment, the second active volume is less than the first active volume.
Figure 10 is the adjustment type nonvolatile shown by one example of the present invention embodiment The schematic diagram of the active volume of module.
Refer to Figure 10, it is assumed that the replacement solid element in storage area 802 is the most all used to replace damage Solid element 1003 (0)～1003 (M), then remaining available solid element in storage area 802 1001 (0)～1001 (N) can be used to store data.Memory management circuitry 702 can be from available solid element 1001 (0)～1001 (N) select at least one and selected available solid element is associated as newly Replacement solid element 1002 (0)～1002 (Q).Now, storage area 802 comprises damage solid element 1003 (0)～1003 (M), available solid element 1001 (0)～1001 (P) and replacement solid element 1002 (0)～1002 (Q).P is less than the positive integer of N.The number of available solid element 1001 (0)～1001 (P) Mesh is equal to available solid element with the summation of the number replacing solid element 1002 (0)～1002 (Q) The number of 1001 (0)～1001 (N).In an exemplary embodiment, replace solid element 1002 (0)～1002 (Q) Number equal to damage solid element 1003 (0)～1003 (M) number.But, in another exemplary embodiment In, the number replacing solid element 1002 (0)～1002 (Q) can also be more or less than damaging solid element The number of 1003 (0)～1003 (M), the present invention is not any limitation as.Producing new replacement solid element After 1002 (0)～1002 (Q), reproducible nonvolatile memorizer module 406 can be continuing with, example As, execution data write, data are erased and data read operation.Additionally, available solid element The number of 1001 (0)～1001 (P) can be less than the number of available solid element 1001 (0)～1001 (N).
In above-mentioned exemplary embodiment, available solid element 901 (0)～901 (N) (or, available solid element 1001 (0)～1001 (N)) the sum total of active volume can be considered above-mentioned first active volume, and available entity The sum total of the active volume of unit 1001 (0)～1001 (P) can be considered above-mentioned second active volume.Therefore, Two active volumes can be less than the first active volume.But, in another exemplary embodiment, if replacing entity Too much (such as, replace the number of solid element more than a threshold value), then part replaces entity list to the number of unit Unit can also be used as available solid element.In other words, now, the second active volume can be more than the One active volume.
It is noted that in the exemplary embodiment of Fig. 9 Yu Figure 10, same type of multiple entities Erased cell by continuous arrangement so that explanation.In another exemplary embodiment, different types of multiple Entity erased cell is likely to be staggered.
The active volume of reproducible nonvolatile memorizer module 406 is being adjusted from the first active volume After being the second active volume, memory management circuitry 702 can provide relevant with this second active volume Capacity information (the hereinafter also referred to second capacity information) gives host computer system 11.Thereby, host computer system 11 is permissible The available appearance of synchronized update reproducible nonvolatile memorizer module 406 is carried out according to this second capacity information Amount.Such as, if this second capacity information indicates current reproducible nonvolatile memorizer module 406 Active volume is " 75G ", then to note down down this information follow-up for duplicative to carry out for host computer system 11 The data access management of non-volatile memory module 406.
In an exemplary embodiment, memory management circuitry 702 can detect that duplicative is non-volatile Property memory module 406 replace solid element number meet pre-conditioned after random time point perform The operation of the active volume of above-mentioned adjustment reproducible nonvolatile memorizer module 406.But, separately In one exemplary embodiment, the replacement entity list of reproducible nonvolatile memorizer module 406 detected Unit number meet pre-conditioned after, memory management circuitry 702 can wait a specific operational order (the hereinafter also referred to first operational order).Only after receiving this first operational order, memorizer manages Circuit 702 just can perform the active volume of above-mentioned adjustment reproducible nonvolatile memorizer module 406 Operation.Thereby, it is possible to decrease during adjusting active volume, unexpected user of deleting also needs to use The risk of the data arrived.
In an exemplary embodiment, memory management circuitry 702 can receive the first operation from host computer system 11 Instruction.Such as, this first operational order can be format manipulation instruction.Additionally, this first operation refers to Order can also is that any operational order set in advance, and the present invention is not any limitation as.Memory management circuitry 702 can perform above-mentioned adjustment reproducible nonvolatile memorizer module according to this first operational order The operation of the active volume of 406.According to this first operational order, memory management circuitry 702 also can be returned The multiple operation failure message corresponding to the first operational order.Such as, memory management circuitry 702 can be returned Multiple programming operations failed message, uses and informs that its programming operations to be performed of host computer system 11 loses Lose.Additionally, in an exemplary embodiment, this operation failure message can also inform reconnect (or, weight Newly inserted) message such as memorizer memory devices 10.
In an exemplary embodiment, memory management circuitry 702 can deposited non-volatile for duplicative During any after the first active volume is adjusted to the second active volume of the active volume of memory modules 406 Between point provide the second capacity information to host computer system 11.Such as, it is provided that the second capacity information is to host computer system The operation of 11 can be actively to be performed by memory management circuitry 702 or react on from host computer system 11 One capacity query instruction and passively perform.But, in another exemplary embodiment, by duplicative The active volume of non-volatile memory module 406 from the first active volume be adjusted to the second active volume it After, memory management circuitry 702 can wait memorizer memory devices 10 or duplicative non-volatile memories Device module 406 is re-powered (such as, to be turned back on, is again electrically connected to host computer system 11 Or it is re-inserted into host computer system 11).Only non-volatile at memorizer memory devices 10 or duplicative After property memory module 406 is re-powered, memory management circuitry 702 just can provide the second capacity Information is to host computer system 11.Such as, it is provided that the second capacity information to the operation of host computer system 11 can be Memorizer memory devices 10 or reproducible nonvolatile memorizer module 406 re-powered after by depositing Reservoir management circuit 702 actively performs or reacts on the capacity query from host computer system 11 and instructs and quilt Dynamic execution.Additionally, in another exemplary embodiment, by reproducible nonvolatile memorizer module 406 Active volume after the first active volume is adjusted to the second active volume, memory management circuitry 702 Power-off can also be performed power on simulated operation, to simulate the dynamic of user plug memorizer memory devices 10 Make.Powering on simulated operation according to this power-off, host computer system 11 may recognition memory storage device 10 Or reproducible nonvolatile memorizer module 406 is re-powered.Performing electrical analogue behaviour in this power-off After work, memory management circuitry 702 can actively or passively perform above-mentioned offer the second capacity information to master The operation of machine system 11.
In an exemplary embodiment, after the second capacity information is supplied to host computer system 11, memorizer Management circuit 702 can wait another specific operational order (the hereinafter also referred to second operational order).Example As, this second operational order can be format manipulation instruction.Such as, this second operational order can be with The message relevant with formatting reproducible nonvolatile memorizer module 406, such as, will be able to make carbon copies Formula non-volatile memory module 406 is formatted into any form and/or to use any formatting mould The message such as formula formats.Memory management circuitry 702 can receive this second operational order.Storage Device management circuit 702 can send format manipulation job sequence to indicate form according to this second operational order Change reproducible nonvolatile memorizer module 406.Type nonvolatile after formatting Module 406 can have above-mentioned second active volume.Such as, as a example by the exemplary embodiment of Figure 10, second Active volume refers to the sum total of the active volume of available solid element 1001 (0)～1001 (P), therefore duplicative Non-volatile memory module 406 can be erased available solid element according to this format manipulation job sequence 1001 (0)～1001 (P).After reproducible nonvolatile memorizer module 406 is formatted, storage Device storage device 10 can normally continue to be used.Such as, as a example by the exemplary embodiment of Figure 10, During memorizer memory devices 10 subsequent use, replacing solid element 1002 (0)～1002 (Q) can To be used to replace the available solid element damaged in available solid element 1001 (0)～1001 (P).
In an exemplary embodiment, can use of above-mentioned adjustment reproducible nonvolatile memorizer module 406 The operation of capacity can be repeatedly executed, persistently to extend the service life of memorizer memory devices 10.? In another exemplary embodiment, it is also possible to set one and adjust frequency threshold value and/or a lower bound of capacity.If The number of times of the operation of the active volume of the adjustment reproducible nonvolatile memorizer module 406 through performing Reach the second active volume after this adjusts frequency threshold value, and/or adjustment and be less than or equal to this lower bound of capacity, Then forbid performing capacity next time and adjust operation (that is, above-mentioned adjustment type nonvolatile mould The operation of the active volume of block 406).
Figure 11 is the flow chart of the storage management method shown by one example of the present invention embodiment.
Refer to Figure 11, in step S1101, it is provided that with reproducible nonvolatile memorizer module Relevant the first capacity information of first active volume is to host computer system.In step S1102, it is judged that can answer Whether the number replacing solid element write in formula non-volatile memory module meets preset number.If can The number replacing solid element in manifolding formula non-volatile memory module does not meets preset number, step S1102 can be repeatedly executed.If the replacement solid element in reproducible nonvolatile memorizer module Number meets preset number, in step S1103, it may be judged whether receive the first operational order.Such as, This first operational order can be programming operations instruction.If being not received by the first operational order, step S1103 can be repeatedly executed.If receiving the first operational order, in step S1104, can answer The active volume writing formula non-volatile memory module is adjusted to the second active volume also from the first active volume Reply the operation failure message corresponding to the first operational order.
In step S1105, it is provided that with the second active volume of reproducible nonvolatile memorizer module The second relevant capacity information is to host computer system.It is noted that in another exemplary embodiment, step Rapid S1105 is by actual plug in memorizer memory devices or reproducible nonvolatile memorizer module Or just perform after simulation plug.Such as, if memorizer memory devices or duplicative non-volatile memories Device module is not by actual plug or is modeled plug, then step S1106 may will not be performed.
In step S1106, it may be judged whether receive the second operational order.Such as, this second operation refers to Order can be programming operations instruction.If being not received by the second operational order, step S1106 can be by Repeat.If receiving the second operational order, in step S1107, sending format manipulation and referring to Sequence is made to format reproducible nonvolatile memorizer module with instruction.After step S1107, step Rapid S1102 can be repeatedly executed.
But, in Figure 11, each step has described in detail as above, just repeats no more at this.It should be noted that In Figure 11, each step can be implemented as multiple procedure code or circuit, and the present invention is not any limitation as.Additionally, The method of Figure 11 example above embodiment of can arranging in pairs or groups uses, it is also possible to being used alone, the present invention is the most in addition Limit.
In sum, the present invention can detect the replacement entity of reproducible nonvolatile memorizer module Number of unit meet some pre-conditioned time, adjust the available of reproducible nonvolatile memorizer module Capacity.Additionally, the active volume after the present invention will be able to adjust by the way of suitable is synchronized to main frame system System.Thereby, except can ensure that host computer system and memorizer memory devices capacity information can synchronized update it Outward, the service life of memorizer memory devices can also be extended.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it, Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.

Claims (27)

1. a storage management method, for controlling a reproducible nonvolatile memorizer module, its Being characterised by, described storage management method includes:
Detect a replacement solid element number of described reproducible nonvolatile memorizer module, Qi Zhongsuo State and replace solid element number with at least one replacement in described reproducible nonvolatile memorizer module in fact One number of body unit is relevant, each described at least one replace solid element in order to replace described duplicative A damage solid element in non-volatile memory module；And
If it is pre-that the described replacement solid element number of described reproducible nonvolatile memorizer module meets one If condition, by an active volume of described reproducible nonvolatile memorizer module from one first available appearance Amount is adjusted to one second active volume, and wherein said active volume refers to that described duplicative is non-volatile and deposits One capacity summation of the multiple available solid element in memory modules, those available solid elements each are neither Described in belonging to, at least one replaces solid element.
Storage management method the most according to claim 1, it is characterised in that described second can use Capacity is less than described first active volume.
Storage management method the most according to claim 1, it is characterised in that also include:
Accord with at the described replacement solid element number described reproducible nonvolatile memorizer module being detected Close described pre-conditioned before, it is provided that with described the first of described reproducible nonvolatile memorizer module Relevant one first capacity information of active volume gives described host computer system；And
Accord with at the described replacement solid element number described reproducible nonvolatile memorizer module being detected Close described pre-conditioned after, it is provided that with described the second of described reproducible nonvolatile memorizer module Relevant one second capacity information of active volume gives described host computer system.
Storage management method the most according to claim 3, it is characterised in that also include:
If the described replacement solid element number of described reproducible nonvolatile memorizer module meets described Pre-conditioned, described reproducible nonvolatile memorizer module is not declared as a write protection state.
Storage management method the most according to claim 3, it is characterised in that also include:
Relevant with described second active volume of described reproducible nonvolatile memorizer module providing Before described second capacity information gives described host computer system, again by described duplicative non-volatile memories Device module powers on, or performs a power-off and power on simulated operation.
Storage management method the most according to claim 1, it is characterised in that also include:
Judge in described reproducible nonvolatile memorizer module according to described replacement solid element number Whether the described at least one described number replacing solid element meets a preset number；And
If described at least in described reproducible nonvolatile memorizer module replaces the institute of solid element State number and meet described preset number, it is determined that the described of described reproducible nonvolatile memorizer module is replaced Change solid element number and meet described pre-conditioned.
Storage management method the most according to claim 1, it is characterised in that make carbon copies described The described active volume of formula non-volatile memory module is adjusted to described second from described first active volume The step of active volume includes:
Select from those available solid elements of described reproducible nonvolatile memorizer module at least its One of；And
Described in being associated as by selected available solid element, at least one replaces solid element.
Storage management method the most according to claim 1, it is characterised in that make carbon copies described The described active volume of formula non-volatile memory module is adjusted to described second from described first active volume The step of active volume includes:
Receive one first operational order；
According to described first operational order, the described of described reproducible nonvolatile memorizer module be can use Capacity is adjusted to described second active volume from described first active volume；And
Reply the operation failure message corresponding to described first operational order.
Storage management method the most according to claim 8, it is characterised in that also include:
There is provided relevant with described second active volume of described reproducible nonvolatile memorizer module one Second capacity information gives described host computer system；
Receive one second operational order；And
According to described second operational order, send a format manipulation job sequence and format with instruction described Reproducible nonvolatile memorizer module,
Described reproducible nonvolatile memorizer module after wherein formatting has the described second available appearance Amount.
10. a memorizer memory devices, it is characterised in that including:
One connects interface unit, is electrically connected to a host computer system；
One reproducible nonvolatile memorizer module；And
One memorizer control circuit unit, is electrically connected to described connection interface unit and described duplicative Non-volatile memory module,
Wherein said memorizer control circuit unit is in order to detect described type nonvolatile mould One replacement solid element number of block, wherein said replacement solid element number is non-easily with described duplicative One number of at least one replacement solid element in the property lost memory module is relevant, each described at least one replace Change solid element in order to the damage entity list replacing in described reproducible nonvolatile memorizer module Unit, and
If the described replacement solid element number of described reproducible nonvolatile memorizer module meets described Pre-conditioned, described memorizer control circuit unit is also in order to by described type nonvolatile One active volume of module is adjusted to one second active volume from one first active volume, wherein said available Capacity refers to a capacity of the multiple available solid element in described reproducible nonvolatile memorizer module Summation, those available solid elements each be all not belonging to described at least one replace solid element.
11. memorizer memory devices according to claim 10, it is characterised in that described second can With capacity less than described first active volume.
12. memorizer memory devices according to claim 10, it is characterised in that detecting The described replacement solid element number stating reproducible nonvolatile memorizer module meets described pre-conditioned Before, described memorizer control circuit unit is also in order to provide and described type nonvolatile One first capacity information that described first active volume of module is relevant gives described host computer system,
Wherein the described replacement solid element number of described reproducible nonvolatile memorizer module detected Mesh meet described pre-conditioned after, described memorizer control circuit unit is also answered with described in order to providing Write one second relevant capacity information of described second active volume of formula non-volatile memory module to described Host computer system.
13. memorizer memory devices according to claim 12, it is characterised in that answer if described The described replacement solid element number writing formula non-volatile memory module meets described pre-conditioned, described Memorizer control circuit unit is not also in order to be declared as one by described reproducible nonvolatile memorizer module Write protection state.
14. memorizer memory devices according to claim 12, it is characterised in that providing and institute State the described second capacity letter that described second active volume of reproducible nonvolatile memorizer module is relevant Before breath is to described host computer system, described memorizer control circuit unit is also in order to again to make carbon copies described Formula non-volatile memory module powers on, or performs a power-off and power on simulated operation.
15. memorizer memory devices according to claim 10, it is characterised in that described memorizer According to described replacement solid element number, control circuit unit is also in order to judge that described duplicative is non-volatile Whether the described at least one described number replacing solid element in memory module meets a preset number, And
If described at least in described reproducible nonvolatile memorizer module replaces the institute of solid element Stating number and meet described preset number, described memorizer control circuit unit also can be made carbon copies described in judging The described replacement solid element number of formula non-volatile memory module meets described pre-conditioned.
16. memorizer memory devices according to claim 10, it is characterised in that described memorizer Control circuit unit by the described active volume of described reproducible nonvolatile memorizer module from described One active volume is adjusted to the operation of described second active volume and includes:
Select from those available solid elements of described reproducible nonvolatile memorizer module at least its One of；And
Described in being associated as by selected available solid element, at least one replaces solid element.
17. memorizer memory devices according to claim 10, it is characterised in that described memorizer Control circuit unit by the described active volume of described reproducible nonvolatile memorizer module from described One active volume is adjusted to the operation of described second active volume and includes:
Receive one first operational order；
According to described first operational order, the described of described reproducible nonvolatile memorizer module be can use Capacity is adjusted to described second active volume from described first active volume；And
Reply the operation failure message corresponding to described first operational order.
18. memorizer memory devices according to claim 17, it is characterised in that described memorizer Control circuit unit is also in order to provide described second with described reproducible nonvolatile memorizer module can One second capacity information relevant with capacity gives described host computer system,
Wherein said memorizer control circuit unit also in order to receive one second operational order,
Wherein said memorizer control circuit unit is also in order to according to described second operational order, to send lattice Formula operational order sequence formats described reproducible nonvolatile memorizer module with instruction,
Described reproducible nonvolatile memorizer module after wherein formatting has the described second available appearance Amount.
19. 1 kinds of memorizer control circuit unit, for controlling a type nonvolatile mould Block, it is characterised in that described memorizer control circuit unit includes:
One HPI, is electrically connected to a host computer system；
One memory interface, is electrically connected to described reproducible nonvolatile memorizer module；With And
One memory management circuitry, is electrically connected to described HPI and described memory interface,
Wherein said memory management circuitry is in order to detect described reproducible nonvolatile memorizer module One replaces solid element number, and wherein said replacement solid element number is non-volatile with described duplicative One number of at least one replacement solid element in memory module is relevant, each described at least one replace real Body unit damages solid element in order to replace in described reproducible nonvolatile memorizer module one, with And
If the described replacement solid element number of described reproducible nonvolatile memorizer module meets described Pre-conditioned, described memory management circuitry is also in order to by described reproducible nonvolatile memorizer module An active volume be adjusted to one second active volume, wherein said active volume from one first active volume Refer to that a capacity of multiple available solid element in described reproducible nonvolatile memorizer module is total With, those available solid elements each be all not belonging to described at least one replace solid element.
20. memorizer control circuit unit according to claim 19, it is characterised in that described Two active volumes are less than described first active volume.
21. memorizer control circuit unit according to claim 19, it is characterised in that in detection Described replacement solid element number to described reproducible nonvolatile memorizer module meets described presetting Before condition, described memory management circuitry is also in order to provide and described type nonvolatile One first capacity information that described first active volume of module is relevant gives described host computer system,
Wherein the described replacement solid element number of described reproducible nonvolatile memorizer module detected Mesh meet described pre-conditioned after, described memory management circuitry is also in order to provide and described duplicative One second capacity information that described second active volume of non-volatile memory module is relevant gives described main frame System.
22. memorizer control circuit unit according to claim 21, it is characterised in that if described The described replacement solid element number of reproducible nonvolatile memorizer module meets described pre-conditioned, Described memory management circuitry is not also in order to be declared as one by described reproducible nonvolatile memorizer module Write protection state.
23. memorizer control circuit unit according to claim 21, it is characterised in that providing Described second relevant with described second active volume of described reproducible nonvolatile memorizer module is held Before amount information gives described host computer system, described memory management circuitry is also in order to again to make carbon copies described Formula non-volatile memory module powers on, or performs a power-off and power on simulated operation.
24. memorizer control circuit unit according to claim 19, it is characterised in that described in deposit According to described replacement solid element number, reservoir management circuit is also in order to judge that described duplicative is non-volatile Whether the described at least one described number replacing solid element in memory module meets a preset number, And
If described at least in described reproducible nonvolatile memorizer module replaces the institute of solid element Stating number and meet described preset number, described memory management circuitry is also non-in order to judge described duplicative The described replacement solid element number of volatile meets described pre-conditioned.
25. memorizer control circuit unit according to claim 19, it is characterised in that described in deposit Reservoir management circuit by the described active volume of described reproducible nonvolatile memorizer module from described the One active volume is adjusted to the operation of described second active volume and includes:
Select from those available solid elements of described reproducible nonvolatile memorizer module at least its One of；And
Described in being associated as by selected available solid element, at least one replaces solid element.
26. memorizer control circuit unit according to claim 19, it is characterised in that described in deposit Reservoir management circuit by the described active volume of described reproducible nonvolatile memorizer module from described the One active volume is adjusted to the operation of described second active volume and includes:
Receive one first operational order；
According to described first operational order, the described of described reproducible nonvolatile memorizer module be can use Capacity is adjusted to described second active volume from described first active volume；And
Reply the operation failure message corresponding to described first operational order.
27. memorizer control circuit unit according to claim 26, it is characterised in that described in deposit Reservoir management circuit is also in order to provide described second with described reproducible nonvolatile memorizer module can One second capacity information relevant with capacity gives described host computer system,
Wherein said memory management circuitry also in order to receive one second operational order,
Wherein said memory management circuitry also in order to according to described second operational order, sends a formatting Operational order sequence formats described reproducible nonvolatile memorizer module with instruction,
Described reproducible nonvolatile memorizer module after wherein formatting has the described second available appearance Amount.
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