CN106252464A - A kind of method accelerating stable cadmium telluride diaphragm solar module peak power - Google Patents
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power Download PDFInfo
- Publication number
- CN106252464A CN106252464A CN201610806986.0A CN201610806986A CN106252464A CN 106252464 A CN106252464 A CN 106252464A CN 201610806986 A CN201610806986 A CN 201610806986A CN 106252464 A CN106252464 A CN 106252464A
- Authority
- CN
- China
- Prior art keywords
- peak power
- solar module
- thin film
- cadmium
- cadmium telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000005286 illumination Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 13
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 9
- 238000003475 lamination Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000002085 persistent effect Effects 0.000 claims abstract description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of method accelerating stable cadmium telluride diaphragm solar module peak power, including: (A) provides substrate；(B) transparent conductive oxide film is deposited on the substrate；(C) cadmium sulphide membrane is deposited at film surface；(D) on described cadmium sulphide membrane, Cadimium telluride thin film is deposited；(E) Cadimium telluride thin film is carried out surface process；(F) buffer layer on Cadimium telluride thin film after treatment；(G) metal back electrode is deposited at buffer-layer surface；(H) battery after deposition metal back electrode is packaged lamination；(I) by solar module additional certain electric current under conditions of 80 ~ 300 DEG C of lamination, 5 seconds 2 minutes persistent period；(J) solar module adding overcurrent is carried out illumination until peak power reaches stable.The method of the present invention is on the basis of solar module impressed current, and raising assembly temperature shortens peak power and stablizes processing time.
Description
Technical field
The present invention relates to photovoltaic solar cell technical field, especially a kind of quickening and stablize cadmium telluride diaphragm solar mould
The method of group peak power.
Background technology
Along with the worsening shortages of the energy, the development and utilization of solar energy is paid attention to by people increasingly.On market bigger to area,
In hgher efficiency, and the demand of the lower novel solar battery of production cost increases day by day.At photovoltaic cell field, cadmium telluride
(CdTe) thin film solar cell because of itself intrinsic material property and it development process, be easy to large area continuous prodution etc.
Advantage, receives significant attention.Cadmium telluride (CdTe) is the material of typical polycrystalline structure, and it has preferable 1.45-1.5eV's
Band gap, and be the semi-conducting material of a kind of direct band gap, absorptance is 5 × 105Cm-1, therefore has only to the thickness of several microns
Material just can prepare high efficiency solaode, be a kind of efficiently, the thin film solar electricity that stable, relative cost is low
Pond.And cadmium telluride (CdTe) film solar battery structure is simple, easily accomplish scale production, be recent domestic too
One of focus of sun energy battery research, especially in field of thin film solar cells.
Cadmium telluride (CdTe) thin-film solar cells is mainly by cadmium sulfide (CdS) and p-type cadmium telluride (CdTe) group of N-shaped
Becoming, the method depositing CdS, CdTe at present mainly has electrochemical deposition method, radio frequency sputtering method, vacuum vapor deposition method, spray pyrolysis
Method, close spaced sublimation method, gas phase transport sedimentation etc..Wherein, the cadmium telluride diaphragm solar electricity that prepared by gas phase transport sedimentation
Pond film quality is good, sedimentation rate is high, crystallite dimension is big, utilization rate of raw materials advantages of higher, it is easy to realizes industrialization and produces.
Cadmium telluride diaphragm solar battery is after several minutes to the During Illumination of a few hours, it may appear that its peak power
(Pmax) phenomenon tended towards stability, and stable definition is: after irradiation after a while, measured before and after relatively light tans by the sun
Peak power, wherein higher value is maximum Pmp, and wherein smaller value be minimum Pmp, (maximum Pmp-minimum Pmp)/
(maximum Pmp+minimum Pmp) < it is stable for being defined as this peak power when 1%, and the change of peak power is likely to be increase
Or reduce.Under the irradiation of etalon optical power, measure the efficiency of module, until peak power reaches stable.
Solar modules can produce photoelectric current under light illumination, and photoelectric current is formed by the carrier of movement, and carrier is at stream
During absorbed layer, can fill up part and confine defect, and it is electrical to stablize module, means currently mainly are to increase additional
Electric current, can shorten the most short day time needed for stable peak power, and wherein the size of impressed current is that solar modules is short
0.5 2 times of road electric current, the persistent period is 2-30 minute, and from the point of view of this time is for industrialization, the time is the most long how
Shorten further and stablize the most short day time needed for cadmium telluride solar modules peak power, be those skilled in the art urgently
Solve the technical problem that.
Summary of the invention
For solving above-mentioned technical problem, it is an object of the present invention to provide and a kind of accelerate to stablize cadmium telluride diaphragm solar module
Powerful method.
The technical solution used in the present invention is:
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power, comprises the following steps: (A) provides substrate；
(B) transparent conductive oxide film of electrode before deposition is used as hull cell on the substrate；(C) at described electrically conducting transparent oxygen
Thin film surface deposition cadmium sulphide membrane；(D) on described cadmium sulphide membrane, Cadimium telluride thin film is deposited；(E) to described telluride
Cadmium thin film carries out surface process；(F) buffer layer on Cadimium telluride thin film after the treatment；(G) at described cushion table
Face deposition metal back electrode；(H) battery after deposition metal back electrode is packaged lamination；(I) by the solar-electricity of lamination
Pond assembly is additional certain electric current under conditions of 80 ~ 300 DEG C, 5 seconds-2 minutes persistent period；(J) sun of overcurrent will be added
Illumination can be carried out until peak power reaches stable by battery component.
In described step (C), cadmium sulphide membrane uses gas phase conveying method deposition.
Described transparent conductive oxide is ITO, FTO or BZO.
The light source that described step (J) illumination is used is that xenon lamp, metal conform to lamp, Halogen light or outdoor light source, and illumination is joined
Number is 1000W/m2.
Beneficial effects of the present invention:
The method of the present invention is on the basis of solar module impressed current, by improving cadmium telluride diaphragm solar electricity
The temperature of pond assembly shortens peak power and stablizes processing time.Temperature raises, and carrier concentration raises, and is subject to during carrier moving
Lattice scattering impact is relatively big, and when temperature is low, lattice vibration is more weak, and lattice scattering effect is the least, so the mobility of carrier
Want big when temperature height, so at high temperature, carrier concentration and mobility are the highest, when carrier is flowing through the process of absorbed layer
In, part can be filled up faster and confine defect, accelerate the Cadimium telluride thin film lamination solar cell module Pmax stable time.
Detailed description of the invention
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power of the present invention, must walk including following
Rapid: (A) provides substrate；(B) transparent conductive oxide film of electrode before deposition is used as hull cell on the substrate；(C)
Cadmium sulphide membrane is deposited on described transparent conductive oxide film surface；(D) on described cadmium sulphide membrane, cadmium telluride is deposited thin
Film；(E) described Cadimium telluride thin film is carried out surface process；(F) buffer layer on Cadimium telluride thin film after the treatment；
(G) metal back electrode is deposited at described buffer-layer surface；(H) battery after deposition metal back electrode is packaged lamination；(I)
By solar module additional certain electric current under conditions of 80 ~ 300 DEG C of lamination, 5 seconds-2 minutes persistent period；(J)
The solar module adding overcurrent is carried out illumination until peak power reaches stable.
Understand the profound meaning of the present invention to be more convenient for, the present invention based on said method includes following example:
Embodiment 1
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 80-180 DEG C, the most additional impressed current, and impressed current continues 15 seconds, is entered by solar energy module the most again
Row 1000W/m2 illumination is until it can be that xenon lamp, metal conform to lamp, Halogen light, outdoor light that peak power reaches to stablize described light source
Source.
Embodiment 2
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 80-180 DEG C, the most additional certain electric current, and impressed current continues 1 minute, the most again by solar energy mould
Block carries out 1000W/m2 illumination until it can be that xenon lamp, metal conform to lamp, Halogen light, family that peak power reaches to stablize described light source
Outer light source.
Embodiment 3
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 80-180 DEG C, the most additional certain electric current, and impressed current continues 2 minutes, the most again by solar energy mould
Block carries out 1000W/m2 illumination until it can be that xenon lamp, metal conform to lamp, Halogen light, family that peak power reaches to stablize described light source
Outer light source.
Embodiment 4
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 180-300 DEG C, the most additional certain electric current, and impressed current continues 15 seconds, the most again by solar energy mould
Block carries out 1000W/m2 illumination until it can be that xenon lamp, metal conform to lamp, Halogen light, family that peak power reaches to stablize described light source
Outer light source.
Embodiment 5
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 180-300 DEG C, the most additional certain electric current, and impressed current continues 1 minute, the most again by solar energy mould
Block carries out 1000W/m2 illumination until it can be that xenon lamp, metal conform to lamp, Halogen light, family that peak power reaches to stablize described light source
Outer light source.
Embodiment 6
For a kind of method accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first by solar energy
Assembly temperature maintains 180-300 DEG C, the most additional certain electric current, and impressed current continues 2 minutes, the most again by solar energy mould
Block carries out 1000W/m2 illumination until it can be that xenon lamp, metal conform to lamp, Halogen light, family that peak power reaches to stablize described light source
Outer light source.
The foregoing is only the preferred embodiments of the present invention, the present invention is not limited to above-mentioned embodiment, as long as with
Essentially identical means realize within the technical scheme of the object of the invention broadly falls into protection scope of the present invention.
Claims (4)
1. the method accelerating to stablize cadmium telluride diaphragm solar module peak power, it is characterised in that comprise the following steps:
(A) substrate is provided；(B) transparent conductive oxide film of electrode before deposition is used as hull cell on the substrate；(C) in institute
State transparent conductive oxide film surface deposition cadmium sulphide membrane；(D) on described cadmium sulphide membrane, Cadimium telluride thin film is deposited；
(E) described Cadimium telluride thin film is carried out surface process；(F) buffer layer on Cadimium telluride thin film after the treatment；(G) exist
Described buffer-layer surface deposition metal back electrode；(H) battery after deposition metal back electrode is packaged lamination；(I) by layer
Solar module additional certain electric current under conditions of 80 ~ 300 DEG C of pressure, 5 seconds-2 minutes persistent period；(J) will add
The solar module of overcurrent carries out illumination until peak power reaches stable.
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power the most according to claim 1, it is special
Levy and be: in described step (C), cadmium sulphide membrane uses gas phase conveying method deposition.
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power the most according to claim 1, it is special
Levy and be: described transparent conductive oxide is ITO, FTO or BZO.
A kind of method accelerating stable cadmium telluride diaphragm solar module peak power the most according to claim 1, it is special
Levy and be: the light source that described step (J) illumination is used is that xenon lamp, metal conform to lamp, Halogen light or outdoor light source, and illumination is joined
Number is 1000W/m2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610806986.0A CN106252464B (en) | 2016-09-07 | 2016-09-07 | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610806986.0A CN106252464B (en) | 2016-09-07 | 2016-09-07 | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106252464A true CN106252464A (en) | 2016-12-21 |
| CN106252464B CN106252464B (en) | 2017-11-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610806986.0A Active CN106252464B (en) | 2016-09-07 | 2016-09-07 | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969084A (en) * | 2020-09-24 | 2020-11-20 | 成都中建材光电材料有限公司 | Method for improving stability of cadmium telluride cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103650168A (en) * | 2011-06-28 | 2014-03-19 | 法国圣戈班玻璃厂 | Method for quickly stabilizing the nominal output of a thin-film solar module |
| US20140363918A1 (en) * | 2013-06-10 | 2014-12-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
-
2016
- 2016-09-07 CN CN201610806986.0A patent/CN106252464B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103650168A (en) * | 2011-06-28 | 2014-03-19 | 法国圣戈班玻璃厂 | Method for quickly stabilizing the nominal output of a thin-film solar module |
| US20140363918A1 (en) * | 2013-06-10 | 2014-12-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969084A (en) * | 2020-09-24 | 2020-11-20 | 成都中建材光电材料有限公司 | Method for improving stability of cadmium telluride cell |
| CN111969084B (en) * | 2020-09-24 | 2022-07-19 | 成都中建材光电材料有限公司 | Method for improving stability of cadmium telluride cell |
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| CN106252464B (en) | 2017-11-10 |
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