CN106252463B - A kind of solar cell that functional areas are adulterated using numerical index hybrid mode and preparation method thereof - Google Patents
A kind of solar cell that functional areas are adulterated using numerical index hybrid mode and preparation method thereof Download PDFInfo
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- CN106252463B CN106252463B CN201610801789.XA CN201610801789A CN106252463B CN 106252463 B CN106252463 B CN 106252463B CN 201610801789 A CN201610801789 A CN 201610801789A CN 106252463 B CN106252463 B CN 106252463B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000002708 enhancing effect Effects 0.000 claims abstract description 11
- 239000002019 doping agent Substances 0.000 claims abstract description 9
- 230000008859 change Effects 0.000 claims abstract description 5
- 230000011218 segmentation Effects 0.000 claims abstract description 5
- 230000007704 transition Effects 0.000 claims abstract description 4
- 230000012010 growth Effects 0.000 claims description 21
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 230000001965 increasing effect Effects 0.000 abstract description 3
- 230000018109 developmental process Effects 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- -1 Aluminium indium phosphorus Chemical compound 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of solar cell that functional areas are adulterated using numerical index hybrid mode and preparation method thereof, the preparation method prepares the functional areas of the solar cell by the way of numeral adulterates cooperation exponential doping；Wherein, numeral doping coordinates the mode of exponential doping to refer to：Doped region segmentation carries out digital doping, and the flow of dopant is incorporated into reative cell with digital transition；And using exponential form change between two adjacent doping concentrations.Solar cell provided by the invention using numerical index mixing and doping mode, the numerical index mixing and doping mode is used in the major function layer of solar cell, to form the built in field of enhancing, promote photo-generated carrier more effectively to separate.The life-span of photo-generated carrier can be significantly increased using the structure, so as to improve the mobility of carrier, the open-circuit voltage lifting to battery is especially pronounced, and solid foundation has been established for the development of ultra high efficiency solar cell of future generation.
Description
Technical field
The present invention relates to a kind of solar cell, in particular it relates to which one kind adulterates functional areas using numeral-exponential hybrid mode
Solar cell.
Background technology
Solar cell be it is a kind of the solar energy of nature is converted directly into the mankind workable for electric energy device, be current
One of most potential mode using green energy resource.Compared to traditional silicon solar cell, III-V group semi-conductor material system is utilized
Standby solar cell, have the advantages that high conversion efficiency, Radiation hardness be strong, good temp characteristic, be acknowledged as height of new generation
Performance long-life space main power source, is used widely in space industry.With compound semiconductor growth technology (such as metal
Organic compound vapour phase epitaxy --- MOCVD) continuous progress, the efficiency of iii-v solar cell obtained large increase,
Multijunction solar cell efficiency alreadys exceed 36%, is transformation efficiency highest in current all solar cells.How further to be lifted
The conversion efficiency of iii-v solar cell turns into current research focus.Under currently more ripe technical conditions, significantly carry
The transformation efficiency of liter solar cell is extremely difficult, and the lifting of efficiency has turned to the optimization of details.
In solar cell, in order to form pn-junction, it can be adulterated accordingly in the epitaxial layer.With n on p batteries（Base
For p-type, launch site is n-type）Exemplified by, base is adulterated using p-type, and launch site is adulterated using n-type.In order to enter to battery front and rear surfaces
Row passivation, reduce Carrier recombination loss, the back surface field generally adulterated in the rear surface introducing p-type of battery, draw on the preceding surface of battery
Enter the Window layer of n-type doping.These functional layer generally use Uniform Dopeds, final purpose are provided to more effectively promote photoproduction
Carrier separation.However, the effective electric-field intensity that this Uniform Doped is formed in battery structure is limited, cause light induced electron empty
The separative efficiency in cave pair is not high, constrains the further lifting of battery performance.
The content of the invention
It is an object of the invention to provide a kind of solar cell, using numeral-exponential hybrid mode to each in solar cell
Functional layer is doped, and this kind of doping way can form enhancing electric field in inside battery, promote photo-generate electron-hole to effectively dividing
From lifting solar cell performance.
In order to achieve the above object, functional areas are adulterated too using numeral-exponential hybrid mode the invention provides a kind of
The preparation method in positive electricity pond, the preparation method prepare the function of the solar cell by the way of numeral adulterates cooperation exponential doping
Area；Described numeral doping coordinates the mode of exponential doping to refer to：Doped region segmentation carries out digital doping, the flow of dopant
With digital transition（For example the amount of dopant is 5/10/15 such 3 segmentation saltus step, rather than continuously it is ramped up 15 from 5）
It is incorporated into reative cell；And using exponential form change between two adjacent doping concentrations.This kind of numeral-exponential hybrid doping
Mode can form enhancing electric field in battery structure, promote photo-generated carrier separation, so as to improve photogenerated current.
Above-mentioned preparation method, wherein, the functional areas include back surface field, base and launch site.
Above-mentioned preparation method, wherein, the solar cell is comprising the positive battery grown, in the battery that the forward direction grows,
Back surface field is adulterated using negative exponent, i.e., doping concentration is successively decreased；Base is adulterated using positive exponent, i.e., doping concentration is incremented by；Adopt launch site
Adulterated with positive exponent.
Above-mentioned preparation method, wherein, the solar cell includes the battery of back growth, in the battery of the back growth,
Launch site is adulterated using negative exponent, and base is adulterated using negative exponent, and back surface field is adulterated using positive exponent.
Present invention also offers a kind of above-mentioned solar cell that functional areas are adulterated using numeral-exponential hybrid mode, its
It is characterised by, the functional areas of the solar cell prepare by the way of numeral adulterates cooperation exponential doping, to be formed in enhancing
Electric field is built, so as to improve carrier mobility.
The above-mentioned solar cell that functional areas are adulterated using numeral-exponential hybrid mode, wherein, the functional areas include the back of the body
Field, base and launch site.
The above-mentioned solar cell that functional areas are adulterated using numeral-exponential hybrid mode, wherein, the solar cell includes just
In the battery grown to the battery of growth, the forward direction, back surface field is adulterated using negative exponent, and base is adulterated using positive exponent, launch site
Adulterated using positive exponent.
The above-mentioned solar cell that functional areas are adulterated using numeral-exponential hybrid mode, wherein, the solar cell includes anti-
To the battery of growth, in the battery of the back growth, launch site is adulterated using negative exponent, and base is using negative exponent doping, back surface field
Adulterated using positive exponent.
Solar cell provided by the invention using numeral-exponential hybrid doping way has advantages below：
（1）Adulterated using exponential form, potential change be moved near interface in the built in field for forming enhancing simultaneously,
Reduce recombination rate of the carrier at interface；（2）It is digital to adulterate the hysteresis effect for reducing dopant, help to form increasing
Strong built in field, enhancing photo-generated carrier separation, so as to improve the mobility of carrier.
Brief description of the drawings
Fig. 1 is the schematic diagram of negative exponent doping, and wherein abscissa represents growth time, and ordinate represents the effective of dopant
Flow.
Fig. 2 is the schematic diagram of positive exponent doping, and wherein abscissa represents growth time, and ordinate represents the effective of dopant
Flow.
Fig. 3 is the positive growth solar cell schematic diagram using numeral-exponential form doping.
Fig. 4 is the back growth solar cell schematic diagram using numeral-exponential form doping.
Embodiment
The embodiment of the present invention is further described below in conjunction with accompanying drawing.
Formal dress solar cell and reversely life of the numeral provided by the invention-exponential hybrid doping way suitable for positive growth
Long upside-down mounting solar cell, which is mainly in functional areas, as worked in base, back surface field and launch site.Numeral-the index
Mixing and doping mode refers to that doped region segmentation carries out digital doping, i.e., in growth course, the flow of dopant is with digital
Transition is passed through in reative cell；And changed between two adjacent doping concentrations using exponential form, as shown in Figure 1 and Figure 2.
Below with GaInP（Gallium indium phosphorus）Exemplified by the MOCVD growths of single junction cell, illustrate the specific implementation of the present invention.
Embodiment 1
As shown in figure 3, by taking the GaInP unijunction solar cells of forward direction growth as an example, first in GaAs（GaAs）On substrate 1
Epitaxial growth GaAs cushions 2, then grow AlGaInP successively（AlGaInP）Back surface field 3, GaInP bases 4, GaInP launch sites
5, AlInP（Aluminium indium phosphorus）Window layer 6, GaAs cap layers 7.The structure uses low pressure metal organic chemical vapor deposition（LP-
MOCVD）Equipment grows.Mixed in the back surface field of battery structure, base and launch site using numeral-exponential doping way
It is miscellaneous, wherein, back surface field uses the negative exponent such as Fig. 1 to adulterate, i.e., doping concentration is successively decreased；Base uses the positive exponent such as Fig. 2 to adulterate, i.e.,
Doping concentration is incremented by；Launch site uses the positive exponent such as Fig. 2 to adulterate, i.e., doping concentration is incremented by.
Embodiment 2
As shown in figure 4, by taking the GaInP unijunction solar cells of back growth as an example, first in GaAs（GaAs）Substrate 10
Epitaxial growth GaAs cushions 20, then grow AlInP successively（Aluminium indium phosphorus）Window layer 30, GaInP launch sites 40, GaInP
Base 50, AlGaInP（AlGaInP）Back surface field 60, GaAs contact layers 70.The structure uses low pressure metal organic chemical vapor
Deposition（LP-MOCVD）Equipment grows.Using numeral-exponential doping way in the launch site of battery structure, base and back surface field
It is doped, wherein, launch site uses the negative exponent such as Fig. 1 to adulterate, i.e., doping concentration is successively decreased；Base uses the negative finger such as Fig. 1
Number doping, i.e., doping concentration is successively decreased；Back surface field uses the positive exponent such as Fig. 2 to adulterate, i.e., doping concentration is incremented by.
Exponential form doping, is moved near interface by potential change, reduces load in the built in field for forming enhancing simultaneously
Recombination rate of stream at interface；It is digital to adulterate the hysteresis effect for reducing dopant, help to form the built-in electricity of enhancing
, enhancing photo-generated carrier separation, so as to improve the mobility of carrier.It is provided by the invention to be mixed using numeral-exponential hybrid
The solar cell of miscellaneous mode, the numeral-exponential hybrid doping way is used in solar cell major function layer, to form enhancing
Built in field, promote photo-generated carrier more effectively separate.The life-span of carrier can be significantly increased using the structure, to battery
Open-circuit voltage lifting it is especially pronounced, established solid foundation for the development of ultra high efficiency solar cell of future generation.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (4)
- A kind of 1. preparation method for the solar cell that functional areas are adulterated using numeral-exponential hybrid mode, it is characterised in that the system Preparation Method prepares the functional areas of the solar cell by the way of numeral adulterates cooperation exponential doping；Described numeral doping coordinates The mode of exponential doping refers to：Doped region segmentation carries out digital doping, and the flow of dopant is incorporated into instead with digital transition Answer in room, and using exponential form change between two neighboring doping concentration；Described solar cell includes the electricity of positive growth Pond or the battery of back growth, wherein, in the battery of forward direction growth, back surface field is adulterated using negative exponent, and base uses positive exponent Doping, launch site are adulterated using positive exponent；In the battery of back growth, launch site is adulterated using negative exponent, and base is using negative Exponential doping, back surface field are adulterated using positive exponent.
- 2. preparation method as claimed in claim 1, it is characterised in that the functional areas include back surface field, base and launch site.
- A kind of 3. preparation of the solar cell according to claim 1 that functional areas are adulterated using numeral-exponential hybrid mode Solar cell prepared by method, it is characterised in that the functional areas of the solar cell coordinate the side of exponential doping using numeral doping Prepared by formula, to form the built in field of enhancing, so as to improve carrier mobility.
- 4. solar cell as claimed in claim 3, it is characterised in that the functional areas include back surface field, base and launch site.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610801789.XA CN106252463B (en) | 2016-09-05 | 2016-09-05 | A kind of solar cell that functional areas are adulterated using numerical index hybrid mode and preparation method thereof |
| PCT/CN2016/102417 WO2018040247A1 (en) | 2016-09-05 | 2016-10-18 | Solar cell with functional areas prepared by digital-exponential hybrid doping mode, and method for preparing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610801789.XA CN106252463B (en) | 2016-09-05 | 2016-09-05 | A kind of solar cell that functional areas are adulterated using numerical index hybrid mode and preparation method thereof |
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| Publication Number | Publication Date |
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| CN106252463A CN106252463A (en) | 2016-12-21 |
| CN106252463B true CN106252463B (en) | 2018-01-19 |
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| US6809400B2 (en) * | 2003-03-14 | 2004-10-26 | Eric Harmon | Composite pinin collector structure for heterojunction bipolar transistors |
| JP2010283162A (en) * | 2009-06-04 | 2010-12-16 | Sanyo Electric Co Ltd | Solar cell and method for manufacturing the same |
| IT1394853B1 (en) * | 2009-07-21 | 2012-07-20 | Cesi Ct Elettrotecnico Sperimentale Italiano Giacinto Motta S P A | PHOTOVOLTAIC CELL WITH HIGH CONVERSION EFFICIENCY |
| US9214580B2 (en) * | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| CN103094397B (en) * | 2012-06-27 | 2015-10-14 | 南京理工大学 | To the vacuum photodiode of 532nm sensitivity |
| CN103646972B (en) * | 2013-12-20 | 2016-04-27 | 湖南共创光伏科技有限公司 | A kind of TCO thin film and preparation method thereof |
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| Publication number | Publication date |
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| CN106252463A (en) | 2016-12-21 |
| WO2018040247A1 (en) | 2018-03-08 |
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