CN106252103B - Thin film capacitor pulse is energized method - Google Patents
Thin film capacitor pulse is energized method Download PDFInfo
- Publication number
- CN106252103B CN106252103B CN201610798533.8A CN201610798533A CN106252103B CN 106252103 B CN106252103 B CN 106252103B CN 201610798533 A CN201610798533 A CN 201610798533A CN 106252103 B CN106252103 B CN 106252103B
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- Prior art keywords
- thin film
- film capacitor
- energized
- pulse
- voltage
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- 239000003990 capacitor Substances 0.000 title claims abstract description 73
- 239000010409 thin film Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 34
- 238000007781 pre-processing Methods 0.000 claims abstract description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 46
- 230000000694 effects Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
Abstract
Energized method this application discloses a kind of thin film capacitor pulse, including pre- processing of energizing is carried out to thin film capacitor alternating voltage, alternating voltage processing of energizing in advance includes：S1：Apply first pulse voltage to thin film capacitor to energize, then thin film capacitor is discharged, the first pulse voltage value is 50~200V；S2：When the total time value energized and discharged to thin film capacitor is less than default processing time value t, S1 is repeated；When the total time value energized and discharged to thin film capacitor reaches time value t, alternating voltage processing of energizing in advance terminates.The thin film capacitor pulse that the application provides is energized method, energized in advance by voltage of being increased exchanges before existing thin film capacitor energizes method, alternating voltage is energized to specifically include in advance and thin film capacitor progress low pressure is energized and then discharged, the self-healing point of metallic film can be reduced, the loss amount of 80 90% metallic film is reduced simultaneously, has ensured the capacitance of thin film capacitor.
Description
Technical field
The disclosure relates generally to electronic component technology field, and in particular to thin film capacitor, more particularly to thin film capacitor
Pulse is energized method.
Background technology
In today's society, electric capacity is one of electronic component largely used in electronic equipment, is widely used in circuit
Separated by direct communication, coupling, bypass, filtering, resonant tank, energy conversion and control etc..Capacitor packages are also with science and technology
Development, especially electronic information technology develops by leaps and bounds, and the different type capacitor packages for being applicable different field occurs, such as：
Aluminium electrolutic capacitor, tantalum electrolytic capacitor, self-healing type parallel condenser, ceramic capacitor, metalized polypropylene condenser, film
Electric capacity, mica capacitor etc..Thin film capacitor is to work as electrode with metal foil, by itself and poly- ethyl ester, polypropylene, and polystyrene or poly- carbon
The plastic sheetings such as acid esters, after overlapping from both ends, it is wound into the capacitor of the construction of cylindrical shape.It has nonpolarity, insulation impedance
Very high, frequency characteristic is excellent and the advantages that dielectric loss very little, is widely used on analog circuit.
Thin film capacitor is in manufacturing process, it is necessary to carry out processing of energizing to it.Processing of energizing is that capacitor is operated in
The seasoned processing of discharge and recharge under nominal state of value, for detecting reparation capacitor, to ensure that product working status reaches every skill
The requirement of art parameter and standard.The processing of energizing of existing thin film capacitor is general to take pulse voltage to energize method, and it is specially to wrap
Include two processes.First process is：Apply the pulse voltage that persistently rises of magnitude of voltage on thin film capacitor to be energized, when applying
The voltage added enters the second process when reaching 1.1 times of rated capacitor operating voltage.Second process is：Continue to thin-film capacitor
Apply the pulse voltage that magnitude of voltage persistently rises on device to be energized, until the voltage applied reaches rated capacitor operating voltage
1.5 times, pulse voltage value rising value every time during each pulse voltage value rising value is less than first during second.But
Thin film capacitor can have weakness in manufacturing process on metallic film, in using above-mentioned method of energizing, it utilizes self-healing property
The characteristics of can repair above-mentioned weakness.However, when metallic film is repaired in above-mentioned self-healing, the metallic film area that it is destroyed is larger, makes
It is larger to obtain metallic film loss, and then causes the capacitance of thin film capacitor to reduce.
The content of the invention
In view of drawbacks described above of the prior art or deficiency, it is expected to provide a kind of thin-film capacitor for reducing metallic film loss
Device pulse is energized method.
The present invention provides a kind of thin film capacitor pulse and energized method, including carries out alternating voltage to thin film capacitor and assign in advance
Can processing, alternating voltage processing of energizing in advance includes：
S1：Apply first pulse voltage to thin film capacitor to energize, then thin film capacitor is discharged, first
Pulse voltage value is 50~200V；
S2：When the total time value energized and discharged to thin film capacitor is less than default processing time value t, S1 is repeated；When
When the total time value energized and discharged to thin film capacitor reaches default processing time value t, alternating voltage processing of energizing in advance terminates；
Time of being energized in S1 is 0.1~2s, and discharge time is 10~200ms in S1, and presetting processing time value t in S2 is
4.5-6s。
Thin film capacitor pulse provided by the invention is energized method, by increasing before existing thin film capacitor energizes method
Alternating voltage is energized in advance, and the first pulse voltage energized is 50~200V, and is less than the rated operational voltage value of thin film capacitor,
Alternating voltage is energized to specifically include in advance and thin film capacitor progress low pressure is energized and then discharged, and can reduce the self-healing of metallic film
Point, and the loss amount of 80-90% metallic film is reduced, ensure the capacitance of thin film capacitor.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, the application's is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 is that alternating voltage provided in an embodiment of the present invention is energized process chart in advance.
Embodiment
The application is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining related invention, rather than the restriction to the invention.It also should be noted that in order to
It is easy to describe, the part related to invention is illustrate only in accompanying drawing.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It refer to Fig. 1, the present embodiment provides a kind of thin film capacitor pulse and energized method, including thin film capacitor is exchanged
Voltage carries out pre- processing of energizing, and alternating voltage processing of energizing in advance includes：
S1：Apply first pulse voltage to thin film capacitor to energize, then thin film capacitor is discharged, first
Pulse voltage value is 50~200V；
S2：When the total time value energized and discharged to thin film capacitor is less than default processing time value t, S1 is repeated；When
When the total time value energized and discharged to thin film capacitor reaches default processing time value t, alternating voltage processing of energizing in advance terminates.
Thin-film capacitor during fabrication, can produce weakness on metallic film, under voltage effect, short circuit occurs at the weakness
Phenomenon, while and produce larger short circuit current, while big short circuit current is again given the metal level in weakness neighboring area
Evaporate, open circuit is formed, so as to eliminate weakness.Energize voltage of energizing in method of existing thin film capacitor is bigger, works as capacitor
When internal weakness generation breakdown forms short-circuit, electric arc is formed in very short time, steeply rises local temperature and pressure, metal
Layer explosive vaporization, self-healing increasing radius, electric arc are pulled off, and form one in dielectric surface loses metal-plated centered on breakdown point
The border circular areas of layer, the loss amount that this results in metallic film are larger.In order to overcome existing thin film capacitor to energize method to gold
Belong to the problems such as film injury is big, assigned in advance by voltage of being increased exchanges before existing thin film capacitor energizes method in the present embodiment
Can, thin film capacitor is energized in advance.The first pulse voltage value is 50~200V in energizing in advance, and this magnitude of voltage is less than general
Thin film capacitor rated operational voltage value 450V, alternating voltage energizes specifically include in advance：It is relatively low to input primary voltage value
First pulse voltage is energized to thin film capacitor, is then discharged, and it is pre- whether the summation time for judging to energize and discharge is less than
If processing time value t.When less than default processing time value t, repeat step S1, when then judging the summation energized and discharged again
Between whether be less than default processing time value t.If being also less than default processing time value t, continue to repeat S1, until energizing and putting
When the summation time of electricity is more than or equal to default processing time value t, processing of energizing in advance terminates.Wherein default processing time value t is thing
First set, refer to since energizing in advance to energize in advance terminate energizing and discharge time summation.This process can utilize
The self-healing property of film is repaired to weakness, reduces self-healing point, and the loss amount of metallic film is less.And after end of energizing in advance,
When the method that metallic film is energized using existing high voltage is energized, because most of weakness has been beaten on metallic film
Fall, now, high voltage will not largely be repaired to metallic film, and then metallic film loss amount is largely reduced.This
The thin film capacitor pulse that embodiment provides is energized method, can reduce the self-healing point of metallic film, while reduce 80-90% gold
Belong to the loss amount of film, ensure the capacitance of thin film capacitor.
Preferably, time of being energized in S1 is 0.1~2s.
In the present embodiment, the first pulse voltage is 0.1~2s to the time of energizing of thin film capacitor, it is ensured that fully profit
With the self-healing property of metallic film, more weakness are repaired as much as possible, and then realize and reduce metallic film loss amount.When the first arteries and veins
When rushing voltage and being more than 2s to the time of energizing of thin film capacitor, because the time of energizing is longer, the self-healing property of film is influenceed, and then make
The region for the weakness that must be closed on suffers from destroying and causing new weakness, and so development is gone down may result in film and punctured repeatedly
So that self-healing recovery time lengthening even self-healing failure at weakness.
In addition, learn that the first pulse voltage is 1.1s to the time of energizing of thin film capacitor after applicant's lot of experiments
When, vulnerability fixes effect is good on metallic film, and the loss amount of metallic film can reduce by 72%.
Preferably, discharge time is 10~200ms in S1.
In the present embodiment, discharged after rear film capacitor of energizing, discharge time is 10~200ms, can be made
Metallic film self-healing effect it is good, metallic film loss amount is less.When being less than 10ms between upon discharging, because the time is shorter,
Metallic film evaporation splash degree is relatively low, and part weakness can be caused can not to complete self-healing reparation, still existed, in later stage big voltage
Larger metallic film loss will be produced when energizing.When being more than 200ms between upon discharging, because the time is longer, metallic film
Cool time extends, and causes weakness enclosure region to be also subject to destroy and cause new weakness, increases the loss amount of metallic film.
In addition, when discharge time is learnt after applicant's lot of experiments is 100ms, to vulnerability fixes effect on metallic film
Good, the loss amount of metallic film can reduce by 76%.
Preferably, it is 4.5-6s that processing time value t is preset in S2.
In the present embodiment, include energizing 0.1~2s of time and discharge time in a minor cycle in process of energizing in advance
10~200ms, the multiple of its summation should be between 4.5-6s, that is, it is 4.5-6s that alternating voltage assigns the treatable time in advance
Between, enable to that the self-healing effect of metallic film is good, and metallic film loss amount is less.When alternating voltage assigns treatable in advance
Between be more than 6s, its self-healing repairing effect has almost no change, and so may result in the wasting of resources.When alternating voltage is energized processing in advance
Time be more than 4.5s, because the time is shorter, it is difficult to ensure vulnerability fixes effect on metallic film, so may result in the later stage
Big voltage will produce larger metallic film loss when energizing.
In addition, after applicant's lot of experiments alternating voltage when to assign the treatable time in advance be 5s, on metallic film
Vulnerability fixes effect is good, and the loss amount of metallic film can reduce by 80%.
Applicants have discovered that when the time of being energized in S1 is 0.1~2s, discharge time is 10~200ms in S1, is preset in S2
Processing time value t is 4.5-6s, good to vulnerability fixes effect on metallic film when the first pulse voltage value is 110V in S1, gold
The loss amount of category film can reduce 80%-90%.Time of especially being energized in S1 is 1.1s, and discharge time is 100ms, S2 in S1
In to preset processing time value t be 5s, when the first pulse voltage value is 110V in S1, vulnerability fixes effect on metallic film is reached
Most preferably, the loss amount of metallic film can reduce by 90%.
Above description is only the preferred embodiment of the application and the explanation to institute's application technology principle.People in the art
Member should be appreciated that invention scope involved in the application, however it is not limited to the technology that the particular combination of above-mentioned technical characteristic forms
Scheme, while should also cover in the case where not departing from the inventive concept, carried out by above-mentioned technical characteristic or its equivalent feature
The other technical schemes for being combined and being formed.Such as features described above has similar work(with (but not limited to) disclosed herein
The technical scheme that the technical characteristic of energy is replaced mutually and formed.
Claims (5)
- A kind of method 1. thin film capacitor pulse is energized, it is characterised in that including carrying out alternating voltage to the thin film capacitor Pre- processing of energizing, alternating voltage processing of energizing in advance include：S1：Apply first pulse voltage to the thin film capacitor to energize, then the thin film capacitor discharged, The first pulse voltage value is 50~200V；S2：When the total time value that the thin film capacitor is energized and discharged is less than default processing time value t, S1 is repeated；When When the total time value energized and discharged to thin film capacitor reaches the default processing time value t, the alternating voltage is energized in advance Processing terminates；Time of being energized in the S1 is 0.1~2s, and discharge time is 10~200ms in the S1, when presetting processing in the S2 Between value t be 4.5-6s.
- The method 2. thin film capacitor pulse according to claim 1 is energized, it is characterised in that the time of being energized in the S1 is 1.1s。
- The method 3. thin film capacitor pulse according to claim 1 is energized, it is characterised in that discharge time is in the S1 100ms。
- The method 4. thin film capacitor pulse according to claim 1 is energized, it is characterised in that when processing is preset in the S2 Between value t be 5s.
- The method 5. thin film capacitor pulse according to claim 1 is energized, it is characterised in that the first pulse electricity in the S1 Pressure value is 110V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610798533.8A CN106252103B (en) | 2016-08-31 | 2016-08-31 | Thin film capacitor pulse is energized method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610798533.8A CN106252103B (en) | 2016-08-31 | 2016-08-31 | Thin film capacitor pulse is energized method |
Publications (2)
| Publication Number | Publication Date |
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| CN106252103A CN106252103A (en) | 2016-12-21 |
| CN106252103B true CN106252103B (en) | 2018-03-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610798533.8A Active CN106252103B (en) | 2016-08-31 | 2016-08-31 | Thin film capacitor pulse is energized method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111768984A (en) * | 2020-06-28 | 2020-10-13 | 盐城市康威电子有限公司 | High-efficiency automatic detection and energization method for capacitor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04332111A (en) * | 1991-05-07 | 1992-11-19 | Matsushita Electric Ind Co Ltd | Lamination-type film capacitor and its manufacture |
| CN102468060A (en) * | 2010-11-11 | 2012-05-23 | 汕头高新区松田实业有限公司 | Enabling apparatus of film capacitor production line |
| CN104485235A (en) * | 2014-12-11 | 2015-04-01 | 铜陵市启动电子制造有限责任公司 | Energizing charging clamp for thin-film capacitors |
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| CN106252103A (en) | 2016-12-21 |
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