CN106251945B - Electrically conducting transparent film manufacturing method and its structure - Google Patents
Electrically conducting transparent film manufacturing method and its structure Download PDFInfo
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- CN106251945B CN106251945B CN201610622649.6A CN201610622649A CN106251945B CN 106251945 B CN106251945 B CN 106251945B CN 201610622649 A CN201610622649 A CN 201610622649A CN 106251945 B CN106251945 B CN 106251945B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacture Of Switches (AREA)
- Manufacturing Of Electric Cables (AREA)
- Position Input By Displaying (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention is to disclose a kind of electrically conducting transparent film manufacturing method and its structure, wherein, for electrically conducting transparent film manufacturing method the following steps are included: providing a substrate, a conducting membrane material, a wire mark diaphragm plate and a metal conductive paste, which has one of predetermined shape opening；The conducting membrane material is located on the substrate；The wire mark diaphragm plate is located on the conducting membrane material；Liquefy the metal conductive paste, and the liquefied metal conductive paste is placed in the opening；Remove the wire mark diaphragm plate；The conducting membrane material and the metal conductive paste are toasted to form a conductive film layer and a metal conducting layer；The conductive film layer patterning of the metal conducting layer will be not located at.Through the above method, this creation can reduce primary baking processing procedure, so that its size amplitude of expanding with heat and contract with cold of transparent conductive film becomes smaller, etched mark will not be generated because of the influence that the substrate expands with heat and contract with cold and reduce the probability of cracked (Crack).
Description
Technical field
The present invention particularly relates to a kind of primary baking system of reduction about a kind of electrically conducting transparent film manufacturing method and its structure
Journey, so that its size amplitude of expanding with heat and contract with cold of transparent conductive film becomes smaller, will not generate etching because of the influence that the substrate expands with heat and contract with cold
Trace and the probability for reducing cracked (Crack).
Background technique
Current touch panel electrode uses tin indium oxide (ITO) transparent electrode piece more, and tin indium oxide (ITO) is a kind of tool
There is the metallic compound of good clear electric conductivity, has that forbidden band is wide, visible range light transmission is high low with resistivity etc. special
Property, tin indium oxide (ITO) electro-conductive glass is widely used in flat-panel display device, solar battery, specific function window coating
And other field of photoelectric devices, it is transparent to be that all kinds of flat-panel display devices such as current LCD, TOP, 0LED, touch screen are widely used
Conductive electrode material.As the key basic material of flat-panel display device, tin indium oxide (ITO) electro-conductive glass its with plate it is aobvious
Show device continuous renewal and upgrading and have the more wide market space.
Refering to Figure 1, it is prior art touch panel manufacturing process schematic diagram.Existing transparent conductive film system
Journey is first to be attached to indium tin oxide films 20 on substrate 10 by annealing process, and make on substrate by yellow light process
Out after tin indium oxide pattern (ITO Pattern) 30, by 40 wire mark of metal plasma-based material (Metal Print) on substrate after again
It is toasted to form metal conducting layer 401, therefore its indium tin oxide films can pass through reheating.However, adding by secondary
The indium tin oxide films of heat, which have the problem of contraposition is inaccurate, etched mark is obvious and is easy to appear crackle (Crack), to be existed, and is caused
The problems such as yield decline, cost increase, still need to be improved.
Summary of the invention
Have that contraposition is inaccurate, etched mark is obvious in view of the indium tin oxide films mentioned above by reheating and
The shortcomings that being easy to appear crackle (Crack), this case creator adhere to excelsior kindhearted motivation, propose a kind of transparent conductive film
Manufacturing method can be effectively improved disadvantages mentioned above.
In order to achieve the above object, this creation system takes following technological means to be reached, wherein this creation provides one
Kind of electrically conducting transparent film manufacturing method comprising have the following steps: provide a substrate, a conducting membrane material, a wire mark diaphragm plate and
One metal conductive paste, the wire mark diaphragm plate have an opening, which has preset shape；The conducting membrane material is located at should
First without baking after on substrate；The wire mark diaphragm plate is located on the conducting membrane material；Liquefy the metal conductive paste, and by liquid
The metal conductive paste changed is placed in the opening；Remove the wire mark diaphragm plate；By metal conductive paste wire mark in the conducting membrane material
After upper, the conducting membrane material and the metal conductive paste are toasted to form a conductive film layer and a metal conducting layer, the gold
Belong to electrocondution slurry and is formed by curing the metal conducting layer by the annealing temperature for forming the conductive film layer；Not by the conductive film layer
The part patterning covered by the metal conducting layer.
In one embodiment of this creation, which is consolidated by the annealing temperature for forming the indium tin oxide layer
Change forms the metal conducting layer.
In one embodiment of this creation, the conductive film layer pattern that will be not located in the metal conducting layer by yellow light process
Change.
This creation also provides a kind of transparent conductive film structure comprising has: a substrate is resinous polymer
Made by (polyethylene terephthalate, PET) material；One conductive film layer is located on the one side of the substrate,
The indium tin oxide layer includes an area of the pattern and a bearing area；And a metal conducting layer, it is located at the bearing area
On, the metal conducting layer and the conductive film layer intersection outer rim have an etching mouth, wherein the conductive film layer is set to the substrate
First without baking after upper, first by metal conducting layer wire mark on the conductive film layer after, then toasted, the metal conducting layer by
Annealing temperature by forming the conductive film layer is formed by curing the metal conducting layer.
In one embodiment of this creation, the etching mouth and the metal conducting layer have an angle, which is 0 degree to 45 degree
Between.
In one embodiment of this creation, which is located at the size of the metal conducting layer between 0 to 15 nanometer (nm).
In one embodiment of this creation, it is 1 to 5 micron of (μ which, which is located at the thickness on the bearing area,
M) between.
In one embodiment of this creation, which is tin indium oxide (Indium Tin Oxides, ITO), nanometer is silver-colored
Line (Silver nanowires, AgNW), polyethylene dioxythiophene (3,4-ethylenedioxythiophene, PEDOT) or
Carbon nanotube (Carbon Nanotube, CNT) is made.
In one embodiment of this creation, which starches institute for printing silver paste, laser silver paste, photosensitive type silver paste or copper
It is made.
Detailed description of the invention
Fig. 1 is prior art touch panel manufacturing process schematic diagram for it；
Fig. 2 is the method flow diagram of this creation electrically conducting transparent film manufacturing method preferred embodiment；
Fig. 3 is the manufacturing process schematic diagram of this creation electrically conducting transparent film manufacturing method preferred embodiment；
Fig. 4 is that this creates its border structure partial enlargement diagram of this creation transparent conductive film；
Fig. 5 is that this creates this creation transparent conductive film structure etching mouth schematic diagram；
Fig. 6 is this creation and known techniques transparent conductive film structure comparison schematic diagram；
Fig. 7 is that this creation and scanning electron microscope (SEM) fractograph analysis of known techniques transparent conductive film structure show
It is intended to.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
To reach above-mentioned purpose and effect, the technical means and structures that this creation uses, it hereby draws preferable with regard to this creation
Its feature and function of embodiment elaborate are as follows, understand completely in order to sharp, but it is noted that the contents such as this do not constitute the present invention
Restriction.
It is the method stream of this creation electrically conducting transparent film manufacturing method preferred embodiment please refer to shown in Fig. 2 and Fig. 3
Journey figure and manufacturing process schematic diagram.
Electrically conducting transparent film manufacturing method the following steps are included:
Step 91: a substrate 1, a conducting membrane material 2, a wire mark diaphragm plate 5 and a metal conductive paste 4 are provided.The base
Plate 1 is substrate used in general touch panel processing procedure, can be resinous polymer (polyethylene
Terephthalate, PET) made by material.In the preferred embodiment, which is touch panel electrode processing procedure
The tin indium oxide (Indium Tin Oxides, ITO) being often used, but not limited to this, it may be nanometer silver wire (Silver
Nanowires, AgNW), polyethylene dioxythiophene (3,4-ethylenedioxythiophene, PEDOT) or carbon nanotube
(Carbon Nanotube, CNT) etc..The wire mark diaphragm plate 5 has one of predetermined shape opening 51.The metal conductive paste 4 is touching
The raw material of the induction electrode of panel is controlled, it can be for made by printing silver paste, laser silver paste, photosensitive type silver paste or copper slurry.
Step 92: the conducting membrane material 2 is located on the substrate 1.Tin indium oxide (ITO) material is placed on the substrate 1.
Step 93: the wire mark diaphragm plate 5 is located on the conducting membrane material 2.Tin indium oxide (ITO) material is divided into a pattern
Region 22 and a bearing area 23, the wire mark diaphragm plate 5 are located on the bearing area 23 of tin indium oxide (ITO) material.
Step 94: liquefy the metal conductive paste 4, and the liquefied metal conductive paste 4 is placed in the opening 51.By liquid
The metal conductive paste 4 changed is placed in the opening 51.
Step 95: removing the wire mark diaphragm plate 5.
Step 96: toasting the conducting membrane material 2 and the metal conductive paste 4 to form a conductive film layer 21 and a gold medal
Belong to conductive layer 41.The baking is to be toasted using annealing (Anneal) process temperatures of tin indium oxide (ITO) material,
Tin indium oxide (ITO) material is toasted simultaneously to form the conductive film layer 21 and form the metal conductive paste 4 baking and is somebody's turn to do
Metal conducting layer 41, the metal conducting layer 41 is to the induction electrode cabling as transparent conductive film structure.
Step 97: the conductive film layer 21 being not located under the metal conducting layer 41 is patterned.41 shape of metal conducting layer
At on the bearing area 23, the conductive film of the area of the pattern 22 will be located at by yellow light (Photolithography) processing procedure
Layer 21 patterns.
The places different from known electrically conducting transparent film manufacturing method are that known electrically conducting transparent film manufacturing method is first will
Indium tin oxide films are after the programs such as annealing, yellow light process produce area of the pattern on substrate, by metal plasma-based web material
It is toasted again after printing (Metal Print) on substrate to form metal conducting layer, therefore its oxidation Jing Guo reheating
Indium tin thin film, which has the problem of contraposition is inaccurate, etched mark is obvious and is easy to appear crackle (Crack), to be existed.And the system of this creation
The method of making is metallic conduction first to be starched 4 material wire marks on the indium tin oxide layer, then carry out annealing and yellow light process, annealing process
Temperature can toast metallic conduction slurry 4 simultaneously, therefore the indium tin oxide layer crystallizes and the metal is led with that can reach simultaneously
Plasma-based 4 is cured as the advantages of metal conducting layer 41.Furthermore please more as shown in fig.4, its for this creation transparent conductive film its
Border structure partial enlargement diagram.The manufacturing method of this creation can reduce primary baking processing procedure, therefore complete yellow light process
Its size amplitude of expanding with heat and contract with cold of conductive film layer afterwards becomes smaller, which will not also produce because of the influence that the substrate expands with heat and contract with cold
Raw etched mark and the probability for reducing cracked (Crack).In addition, its conductive film layer of the manufacturing method of this creation is led with metal
It is only needed at the bridge joint of electric layer in view of exposure accuracy, the problems such as without considering harmomegathus rate and wire mark aligning accuracy, because
This its frame length can be contracted in 100 microns (μm) by 300~400 microns (μm) of script, and face impedance maximum tolerance model
Enclosing can be contracted in 100 microns (μm) from 200~250 microns (μm), have the effect of narrow frame (slim border).
Please refer to shown in Fig. 3, Fig. 5, Fig. 6 and Fig. 7, Fig. 5 is that this creation transparent conductive film structure etches mouth schematic diagram,
Fig. 6 and Fig. 7 is respectively this creation and known techniques transparent conductive film structure comparison schematic diagram and scanning electron microscope (SEM)
Fractograph analysis schematic diagram.This creation also provides a kind of transparent conductive film structure manufactured using the above method comprising has: a base
Plate 1, a conductive film layer 21 and a metal conducting layer 41.
The substrate 1 is substrate 1 used in general touch panel processing procedure, can be resinous polymer
Made by (polyethylene terephthalate, PET) material.
The conductive film layer 21 is located on the one side of the substrate 1, which is a membrane structure comprising has one
Area of the pattern 22 and a bearing area 23, the conductive film layer 21 are tin indium oxide (ITO), nanometer silver wire (AgNW), polyethylene
Dioxy thiophene (PEDOT) or carbon nanotube (CNT) are made.
The metal conducting layer 41 is the induction electrode cabling of the transparent conductive film structure, can be printing silver paste, laser silver
Slurry, photosensitive type silver paste or copper slurry made by, which is located on the bearing area 23, the metal conducting layer 41 and this
21 intersection outer rim of conductive film layer has an etching mouth 24.
In one embodiment of this creation, it is 1 to 5 micro- which, which is located at the thickness on the bearing area 23,
Between rice (μm).
The places different from known transparent conductive film structure are, its metal conducting layer 40 of known transparent conductive film structure
Be direct wire mark on the substrate 10, and the transparent conductive film structure of this creation, in order to reduce the processing procedure once toasted, metal is led
Electric layer 41 is wire mark on conductive film layer 21.
It is influenced by yellow light process, the intersection of the conductive film layer 21 and the metal conducting layer 41 can generate slight side
Erosion, and the etching mouth 24 is generated, but the etching mouth 24 will not influence functionality.The etching mouth 24 is located at the metal conducting layer 41
Interior size H can be between 0 to 15 nanometer (nm), and the etching mouth can have an angle theta, the folder with the metal conducting layer 41
Angle θ can be between for 0 degree to 45 degree.In addition, can be to avoid cabling short circuit using laser etching technique.
In summary, it can be seen that this creation has the advantage that
1. creation toasts plasma-based material using the annealing temperature of conducting membrane material (tin indium oxide), while reaching conductive membrane material
The advantages of material crystallization and metallic conduction slurry are cured as metal conducting layer.
2. a creation can reduce primary baking processing procedure, conductive film layer its size after completing yellow light process is expanded with heat and contract with cold width
Degree becomes smaller, which will not also generate etched mark because of the influence that the substrate expands with heat and contract with cold and reduce cracked
(Crack) probability.
3. only needing at the bridge joint of creation conductive film layer and metal conducting layer in view of exposure accuracy, without considering
The problems such as to harmomegathus rate and wire mark aligning accuracy, have the effect of narrow frame (slim border).
By above-mentioned detailed description, sufficiently show that this creation has the progressive implemented, and be not seen before new
Creation, complies fully with invention patent requirement, and whence is filed an application in accordance with the law.Only the foregoing is merely the preferred embodiment of this creation and
, when the range that cannot implement to limit this creation, that is, according to equivalent changes and modifications made by this creation the scope of the patents, all
It should belong in the range of the invention patent covers.
Claims (8)
1. a kind of electrically conducting transparent film manufacturing method, which is characterized in that it includes the following steps:
A substrate, a conducting membrane material, a wire mark diaphragm plate and a metal conductive paste are provided, which has one to open
Mouthful, which has preset shape；
First without baking after the conducting membrane material is located on the substrate；
The wire mark diaphragm plate is located on the conducting membrane material；
Liquefy the metal conductive paste, and the liquefied metal conductive paste is placed in the opening；
Remove the wire mark diaphragm plate；
By metal conductive paste wire mark on the conducting membrane material after, toast the conducting membrane material and the metal conductive paste with
A conductive film layer and a metal conducting layer are formed, which is subject to by the annealing temperature for forming the conductive film layer
It is formed by curing the metal conducting layer；
The part that the conductive film layer is not covered by the metal conducting layer patterns.
2. electrically conducting transparent film manufacturing method as described in claim 1, which is characterized in that by yellow light process by the conductive film layer
The part not covered by the metal conducting layer patterns.
3. a kind of transparent conductive film structure, which is characterized in that it includes:
One substrate is made by resinous polymeric material；
One conductive film layer is located on the one side of the substrate, which includes an area of the pattern and a supporting region
Domain；And
One metal conducting layer is located on the bearing area, and the metal conducting layer and the conductive film layer intersection outer rim have one
Mouth is etched,
Wherein, first without baking after conducting membrane material being set on the substrate, first by metal conductive paste wire mark in the conduction
It after on membrane material, then is toasted, which is formed by curing by the annealing temperature for forming the conductive film layer
The metal conducting layer.
4. transparent conductive film structure as claimed in claim 3, which is characterized in that the etching mouth and the metal conducting layer have one
Angle, the angle are between 0 degree to 45 degree.
5. transparent conductive film structure as claimed in claim 3, which is characterized in that the etching mouth is located at the ruler of the metal conducting layer
Very little is between 0 to 15 nanometer.
6. transparent conductive film structure as claimed in claim 3, which is characterized in that the metal conducting layer is located on the bearing area
Thickness be 1 to 5 micron between.
7. transparent conductive film structure as claimed in claim 3, which is characterized in that the conductive film layer is tin indium oxide, nanometer silver
Made by line, polyethylene dioxythiophene or carbon nanotube.
8. transparent conductive film structure as claimed in claim 3, which is characterized in that the metal conducting layer is printing silver paste, laser
Made by silver paste, photosensitive type silver paste or copper slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610622649.6A CN106251945B (en) | 2016-08-01 | 2016-08-01 | Electrically conducting transparent film manufacturing method and its structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610622649.6A CN106251945B (en) | 2016-08-01 | 2016-08-01 | Electrically conducting transparent film manufacturing method and its structure |
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| CN106251945A CN106251945A (en) | 2016-12-21 |
| CN106251945B true CN106251945B (en) | 2019-01-25 |
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| CN110085127B (en) * | 2019-05-23 | 2021-01-26 | 云谷（固安）科技有限公司 | Flexible display mother board and flexible display screen manufacturing method |
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| JP2006140220A (en) * | 2004-11-10 | 2006-06-01 | Bridgestone Corp | Low-reflectivity conductive film, electromagnetic wave shielding film, and electromagnetic wave shielding translucent window material |
| JP5182238B2 (en) * | 2009-06-30 | 2013-04-17 | ソニー株式会社 | Touch panel and manufacturing method thereof |
| CN102446039B (en) * | 2010-09-30 | 2015-08-12 | 陈维钏 | Contact panel manufacture method |
| CN103474133A (en) * | 2013-09-26 | 2013-12-25 | 苏州胜利光学玻璃有限公司 | Transparent electric conduction film |
| TWI531079B (en) * | 2014-08-12 | 2016-04-21 | 友達光電股份有限公司 | Solar cell and method for fabricating the same |
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