CN106249538B - A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic - Google Patents
A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic Download PDFInfo
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- CN106249538B CN106249538B CN201510962313.XA CN201510962313A CN106249538B CN 106249538 B CN106249538 B CN 106249538B CN 201510962313 A CN201510962313 A CN 201510962313A CN 106249538 B CN106249538 B CN 106249538B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 47
- 239000011241 protective layer Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 230000007704 transition Effects 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 13
- 230000000994 depressogenic effect Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 2
- 240000008042 Zea mays Species 0.000 claims 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 claims 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 claims 1
- 235000005822 corn Nutrition 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to technical field of integrated circuits, specifically disclose a kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic.Preparation method of the invention successively includes the processing of mask substrate, the production of multilayer film, the production of transition zone, the production of absorbed layer and the production of protective layer.The mask arrangement as made from this method, on the one hand, realize the function of overcoming or inhibit mask shadow effect；On the other hand, in mask arrangement manufacturing process, without performing etching to the multi-layer film structure for playing reflectivity humidification, the damage in mask preparation process to echo area multi-layer film structure is considerably reduced, to improve its structural reliability, the performance of mask is improved.
Description
Technical field
The present invention relates to ic manufacturing technology field, in particular to a kind of mask arrangement for extreme ultraviolet photolithographic and
Preparation method.
Background technique
Extreme ultraviolet lithography is the one preferred technique that 10nm and following technology node are realized in IC manufacturing industry, it
Using wavelength is the extreme ultraviolet of 13.5nm as operation wavelength, since nearly all substance is opaque to the wavelength,
All optical elements including its mask are both needed to be formed with the reflecting element of multilayer film using plating.
The multilayer film of extreme ultraviolet wave band is commonly used for by two kinds of substances of Mo, Si alternating deposit in optical element substrate
It forms, overall thickness about 300nm.With the continuous propulsion of technology node in IC manufacturing industry, extreme ultraviolet photolithographic equipment
It needs to develop to large-numerical aperture (NA), the characteristic size (Critical Dimension, CD) on mask also must be into one
Step reduces, and the absorber thickness for carrying mask pattern information is limited by material properties, is had no and is substantially reduced, so that mask features
Size is suitable with absorber thickness, and then result in the mask shadow effect in extreme ultraviolet lithography system, also referred to as 3D effect
Aggravation.
2013, Japanese Kosuke Takai et al. made first piece of film etching type binary mask to overcome pole
Mask shadow effect present in ultraviolet photolithographic.In the method, researcher passes through the multilayer film knot in etching mask blank
Structure makes it generate absorption to extreme ultraviolet, replaces the absorbent layer structure in traditional binary mask, carries mask pattern letter to reach
The effect of breath.
But in the preparation process of this film etching type mask, mask uptake zone is white by complete etching mask
What the multi-layer film structure of plate was realized, etch thicknesses are suitable with thickness of multilayer film, about 300nm, this is relative to 40nm and following (right
Should in semiconductor industry 10nm and following technology node) mask features for, using wet etching carry out film etching
During, diffusion easily occurs for solvent to cause echo area multilayer film substrate to generate defect, influences mask contrast, most final decline
Low exposure quality.
Summary of the invention
The present invention is directed to overcome defect present in the prior art, a kind of novel extreme ultraviolet photolithographic mask arrangement is provided
Preparation method and mask arrangement obtained by this method, can not only overcome mask shadow effect, additionally it is possible to avoid to multilayer
The etching of film.
To achieve the above object, the invention adopts the following technical scheme:
On the one hand, the present invention provides a kind of preparation method of extreme ultraviolet photolithographic mask arrangement, which is characterized in that the system
Preparation Method in turn includes the following steps:
A. the processing of mask substrate, including exposing patterns will be designed and be transferred to the mask substrate, and formed depressed area with
Outer convex region；
B. the production of multilayer film, by the multilayer film mask substrate that is deposited on that treated, the multilayer film is by high refractive index
Dielectric layer is formed with low refractive index dielectric layer alternating deposit；
Transition zone is deposited on the multilayer film by the c. production of transition zone；
Absorbed layer is set on the transition zone by the d. production of absorbed layer, and the absorbed layer includes that can absorb luminous energy
Material；
E. the production of protective layer after the transition zone and absorbed layer that remove the outer convex region, protective layer is covered in described outer
On the multilayer film in convex region and the absorbed layer of the depressed area, the protective layer plays a protective role to the mask arrangement；
The depressed area is the uptake zone of mask arrangement；The outer convex region is the echo area of the mask arrangement.
Preferably, upper surface of the upper surface of the absorbed layer of the uptake zone not higher than the multilayer film of the echo area.
Preferably, the protective layer of the mask arrangement is three-dimensional structure.
Preferably, there is offset between the protective layer upper surface of the uptake zone and the protective layer upper surface of the echo area
Value.The deviant is not more than 50nm.
Preferably, the multilayer film is formed by Mo layers with Si layers of alternating deposit, and the multilayer film is equipped with 40-60 period.
Preferably, the material that can absorb luminous energy is the substance with high absorption coefficient.It is described to absorb luminous energy
Material be selected from one of the compound of Ta, the compound of Cr or SnO or a variety of.
Preferably, the material of the protective layer is selected from one of Ru, RuO or Li or a variety of.
Yet another aspect, the present invention provides a kind of extreme ultraviolet photolithographic mask arrangement, especially by preparation recited above
Method is made.
The beneficial effects of the present invention are: the preparation method of extreme ultraviolet photolithographic mask arrangement provided by the invention, a side
Face, compared to traditional binary mask structure, absorbed layer upper surface is placed in table on the multilayer film of echo area by mask arrangement obtained
Face is contour or lower position, so that uptake zone is completely unobstructed to the light of echo area, to realize inhibition or overcome
The function of mask shadow effect；On the other hand, compared to existing film etching type mask arrangement or the pouring-in mask of absorbed layer
Structure, in mask arrangement manufacturing process provided by the present invention, without to play the multi-layer film structure of reflectivity humidification into
Row etching, considerably reduces the damage in mask preparation process to echo area multi-layer film structure, so that improving its structure can
By property, the performance of mask is improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram according to the mask substrate of one embodiment of the invention.
Fig. 2 is according to the structural schematic diagram after the mask substrate of one embodiment of the invention etching.
Fig. 3 is the structural schematic diagram after the production multilayer film according to one embodiment of the invention.
Fig. 4 is the structural schematic diagram after the production transition zone according to one embodiment of the invention.
Fig. 5 is the schematic diagram after the production absorbed layer according to one embodiment of the invention.
Fig. 6 is the mask arrangement schematic diagram according to one embodiment of the invention.
Fig. 7 is the mask arrangement schematic diagram according to another embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing and specific implementation
Example, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only to explain this hair
It is bright, but not to limit the present invention.
Fig. 1 to Fig. 6 shows the schematic diagram of each step resulting structures in entire mask arrangement preparation process, and Fig. 1 to Fig. 6 is only
For the schematic diagram of structure, not by actually drawing the specific period or the thickness of each layer be drawn to scale.Below with reference to Fig. 1 to figure
6 introduce the preparation method of the mask arrangement of one embodiment of the invention.
Mask substrate 00 shown in Fig. 1 is silicon base, concretely Si wafer.The processing of mask substrate 00 includes that will design
Exposing patterns are transferred to the mask substrate, and form depressed area and outer convex region.In specific embodiment, mask substrate 00 is passed through
After the pretreatments such as cleaning and drying, gluing is carried out, so that photoresist 01 is uniformly distributed in the surface of mask substrate 00, then uses
The technologies such as photoetching or electron-beam direct writing perform etching mask substrate 00, and design exposing patterns are transferred in mask substrate 00,
It is formed simultaneously depressed area and outer convex region, it is specific as shown in Figure 2.Wherein, the depth of depressed area is usually 20nm-80nm, specifically with
The thickness of the other structures such as absorbed layer is related, and depressed area corresponds to the uptake zone 50 of mask arrangement, and outer convex region corresponds to mask knot
The echo area 60 of structure.
Before making multilayer film, first pass through and remove photoresist, remove photoresist 01, using cleaning and the process such as dry it
Afterwards, the modes such as magnetron sputtering technology can be used, deposit multilayer film 10 to mask substrate 00, multilayer film 10 is situated between by high refractive index
Matter layer is formed with low refractive index dielectric layer alternating deposit, as shown in Figure 3.Specifically, multilayer film 10 is Mo/Si multilayer high reflection
Film, for first depositing Mo layer 11 or Si layer 12, there is no restrictions, as long as guaranteeing that Mo layer 11 and Si layer 12 are alternately laminated, institute
The surface profile distribution of the multilayer film 10 of formation is similar to design the distribution of exposing patterns in mask substrate 00.
In a preferred embodiment, the period of multilayer film 10 is 40-60, more preferably 40；The week of multilayer film 10
Phase, the periodic thickness in each period may be the same or different in multilayer film 10, and Fig. 1 is into Fig. 7 with a thickness of 7nm or so
Do not draw all periods completely.
After depressed area and outer convex region deposit multilayer film 10, then to the surface uniform deposition transition zone 20 of multilayer film 10,
It is specific as shown in Figure 4.Wherein, the material of transition zone 20 can be photoresist or other dissolve in the solid matter in solvent, as long as
It can be realized and directly contact and react with solvent etc., or make to be attached on the transition zone 20 of echo area 60 by other approach
Absorbed layer 30 falls off, and exposes 10 surface of multilayer film, to realize the reflection of extreme ultraviolet, forms the echo area effect of mask i.e.
It can.
Later, using the various physically or chemically deposition techniques such as thermal evaporation plated film or magnetron sputtering, on 20 surface of transition zone
Deposit absorbent layer 30, the upper surface of the absorbed layer 30 of uptake zone 50 is lower than the surface of the multilayer film 10 of echo area 60, specific such as Fig. 5
It is shown.The structure setting enables to uptake zone 50 completely unobstructed to the light of echo area 60, thus realize overcome or
Inhibit the function of mask shadow effect.
Absorbed layer 30 includes the material that can absorb luminous energy, specifically can be by having the object of high absorption coefficient in extreme ultraviolet waveband
Texture is at playing absorption extreme ultraviolet, carry the effect of mask information.
Specifically, high absorption coefficient substance is selected from the compound, Cr and its one of compound or SnO or a variety of of Ta.
Wherein, SnO is due to having the deep ultraviolet band detection that can be used for extreme ultraviolet photolithographic mask compared with high transmittance in deep ultraviolet.
Structure shown in Fig. 5 will be formed by be placed in solvent, so that the transition zone 20 of echo area 60 dissolves, and made
The absorbed layer 30 for being attached to the region falls off, and exposes 10 surface of multilayer film, realizes the reflection of extreme ultraviolet.Meanwhile uptake zone 50
Transition zone 20 due to can not with solvent occur directly contact, can't dissolve, therefore the absorbed layer 30 for being attached to this is protected
It stays.The functional structure of transition zone 20 and non-mask that this place retains, can not only go in the preparation process of the mask arrangement
The relict texture removed, but any adverse effect can't be generated to the performance of mask arrangement.
Finally, resulting structures surface deposits protective layer 40 during upward one after the process such as over cleaning, drying,
The mask arrangement obtained to the end is as shown in Figure 6.The protective layer 40 is aoxidizing and height under working environment mainly for inhibition mask
It can be damaged caused by particle sputtering, the material of protective layer 40 is selected from one of Ru, RuO or Li or a variety of.
In mask arrangement shown in fig. 6, protective layer 40 is three-dimensional structure, 40 upper surface of protective layer of uptake zone 50 and reflection
There are deviant between 40 upper surface of protective layer in area 60, deviant is not more than 100nm, specially a few nanometers to tens of nanometers.
In 00 etching process of mask substrate, the thickness of the depth and absorbed layer 30 that specifically etch and the deviant are related.The mask
Structure is not performing etching multilayer film 10 directly, while not influencing 10 performance of multilayer film, additionally it is possible to overcome mask negative completely
The influence of shadow improves the performance of mask arrangement.
In addition, finally obtaining another mask as shown in Figure 7 by Fig. 1 to similar preparation process shown in fig. 6
Structure.Difference in preparation process is only that, in the etching process of mask substrate 00, etching depth needs to reduce, in addition, heavy
When product absorbed layer 30, the upper surface of the absorbed layer 30 of uptake zone 50 and the upper surface of multilayer film 10 of echo area 60 are concordant, finally
In mask arrangement obtained, 40 upper surface of protective layer of uptake zone 50 and 40 upper surface of protective layer of echo area 60 are in same flat
Face.
The preparation process is equally not necessarily to directly perform etching multilayer film 10, will not destroy the structure of multilayer film 10, less
The performance that multilayer film 10 can be reduced can be improved the performance of mask arrangement entirety.
The above described specific embodiments of the present invention are not intended to limit the scope of the present invention..Any basis
Any other various changes and modifications made by technical concept of the invention should be included in the guarantor of the claims in the present invention
It protects in range.
Claims (10)
1. a kind of preparation method of extreme ultraviolet photolithographic mask arrangement, which is characterized in that the preparation method successively includes as follows
Step:
A. the processing of mask substrate, including exposing patterns will be designed and be transferred to the mask substrate, and form depressed area and evagination
Area；
B. the production of multilayer film, by the multilayer film mask substrate that is deposited on that treated, the multilayer film is by high refractive index medium
Layer is formed with low refractive index dielectric layer alternating deposit；
Transition zone is deposited on the multilayer film by the c. production of transition zone；
Absorbed layer is set on the transition zone by the d. production of absorbed layer, and the absorbed layer includes the material that can absorb luminous energy
Material；
Protective layer after the transition zone and absorbed layer that remove the outer convex region, is covered in the outer convex region by the e. production of protective layer
Multilayer film and the depressed area absorbed layer on, the protective layer plays a protective role to the mask arrangement；
The depressed area is the uptake zone of mask arrangement；The outer convex region is the echo area of the mask arrangement.
2. preparation method as described in claim 1, which is characterized in that the upper surface of the absorbed layer of the uptake zone is not higher than institute
State the upper surface of the multilayer film of echo area.
3. preparation method as described in claim 1, which is characterized in that the protective layer in the mask arrangement is three-dimensional structure.
4. preparation method as described in claim 1, which is characterized in that the protective layer upper surface of the uptake zone and the reflection
There are deviants between the protective layer upper surface in area.
5. preparation method as claimed in claim 4, which is characterized in that the deviant is not more than 50nm.
6. preparation method as described in claim 1, which is characterized in that the multilayer film is by Mo layers and Si layers of alternating deposit shape
At the multilayer film is equipped with 40-60 period.
7. preparation method as described in claim 1, which is characterized in that the material that can absorb luminous energy is with high-selenium corn
The substance of coefficient.
8. preparation method as described in claim 1, which is characterized in that the material that can absorb luminous energy is selected from the chemical combination of Ta
One of object, the compound of Cr or SnO or a variety of.
9. preparation method as described in claim 1, which is characterized in that the material of the protective layer is in Ru, RuO or Li
It is one or more.
10. a kind of extreme ultraviolet photolithographic mask arrangement, which is characterized in that the mask arrangement is by any one in claim 1-9
Preparation method described in is made.
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| CN201510962313.XA CN106249538B (en) | 2015-12-21 | 2015-12-21 | A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic |
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| CN201510962313.XA CN106249538B (en) | 2015-12-21 | 2015-12-21 | A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic |
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| CN106249538B true CN106249538B (en) | 2019-09-27 |
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| US20180299765A1 (en) * | 2017-04-12 | 2018-10-18 | Globalfoundries Inc. | Extreme ultraviolet lithography (euvl) reflective mask |
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| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
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| WO2010050447A1 (en) * | 2008-10-29 | 2010-05-06 | Hoya株式会社 | Photomask blank, photomask and method for manufacturing the photomask |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
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