CN104298068A - Extreme-ultraviolet photoetching mask structure for large-value pore diameter - Google Patents
Extreme-ultraviolet photoetching mask structure for large-value pore diameter Download PDFInfo
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- CN104298068A CN104298068A CN201410508408.XA CN201410508408A CN104298068A CN 104298068 A CN104298068 A CN 104298068A CN 201410508408 A CN201410508408 A CN 201410508408A CN 104298068 A CN104298068 A CN 104298068A
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- mask
- extreme ultraviolet
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- mask structure
- absorption layer
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- 238000001259 photo etching Methods 0.000 title claims abstract description 10
- 239000011148 porous material Substances 0.000 title abstract 2
- 238000010521 absorption reaction Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 230000007547 defect Effects 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005530 etching Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to an extreme-ultraviolet photoetching mask structure for the large-value pore diameter. The extreme-ultraviolet photoetching mask structure comprises a mask base, an extreme-ultraviolet multi-layered high-reflection film and a cap layer in sequence from bottom to top, wherein the top part of the extreme-ultraviolet multilayered high-reflection film has a notch for filling an absorbing layer; the absorbing layer is filled in the notch; the height of the top part of the absorbing layer is same as that of the top part of the extreme-ultraviolet multilayered high-reflection film; and a graphic structure of the absorbing layer is used for carrying pattern information of the photoetching mask structure. Different from the traditional reflection type mask structure, the mask structure has the characteristic that a reflection area and an absorbing area are positioned in the same plane and belong to a two-dimensional structure. An exposure graphic is formed by the absorbing area; and the absorbing area comprises two parts, namely an absorbing layer and an anti-reflection layer which are respectively deposited in the multilayered film after being etched. The extreme-ultraviolet photoetching mask structure has the advantages that the shadow effect of a mask can be completely eliminated, meanwhile, the multilayered film structure of the reflection area can be well protected and the contrast ratio and the structural stability of the mask can be improved.
Description
Technical field
The invention belongs to micro-nano technology field, specifically belong to extreme ultraviolet photolithographic field, relate to a kind of extreme ultraviolet photolithographic mask structure for large-numerical aperture more specifically.
Background technology
By the driving of extensive VLSI (very large scale integrated circuit) manufacturing cost and Moore's Law, the photoetching of extreme ultraviolet projection exposure is considered to the Next Generation Lithography of the most potentiality realizing 14nm and even below 10nm technology node.Because extreme ultraviolet is almost all opaque to all substances, all optical elements therefore comprising mask must adopt reflective structure.Be different from deep UV (ultraviolet light) etching system, mutually interfere for avoiding incidence and emergent light, the light of illuminator outgoing must be irradiated on mask obliquely, and be reflected in projection exposure system therefor, and along with exposure feature size (Critical Dimension, CD) reduction, the increase of optical projection system numerical aperture NA, this pitch angle is larger.Conventional extreme ultraviolet mask arrangement is the absorption layer added in the substrate being coated with extreme ultraviolet multilayer high reverse--bias film with exposing patterns information, and material is generally Cr or TaN, and its thickness is generally 40 ~ 70nm.Be directed to 14nm and following technology node demand thereof, this thickness is suitable with mask graph characteristic dimension, therefore, the oblique incidence of light beam will cause the 3D effect of mask, also be shadow effect, namely the light blocking the close absorption layer that cannot receive luminous energy and echo area reflection near the echo area of absorption layer due to absorption layer on mask cannot enter optical projection system because absorption layer blocks, the effective reflection area on mask is finally caused to reduce, uptake zone increases, and makes exposing patterns size and design load produce deviation.Relative to optical projection system, mask, only at yoz face tilt, therefore can cause the different deviations of x direction and y direction exposure feature size, i.e. transverse direction-longitudinal characteristic dimension deviation (H-V CD bias).
In order to overcome aforementioned mask shadow effect, researchist finds new material substitution absorption layer, and absorber thickness under the prerequisite of not losing light energy absorption ability is diminished, and namely by using thinner absorption layer to weaken mask shadow effect, but can not eliminate completely; And on the other hand, the researchist of Japan proposes etched film type mask, namely mask pattern does not re-use absorption layer, the substitute is the removal multilayer film that is etched completely, the substrate of exposed mask, now the luminous energy of echo area is no longer blocked, and the luminous energy inciding etched area also will be absorbed completely, thus completely eliminates mask shadow effect.But this structure etches away multilayer film completely, the nearly 280nm degree of depth, much larger than the mask feature size (CD) of tens nanometer, in etching process, easily there is diffusion thus cause echo area film substrate structural damage, thus reduction reflectivity even causes echo area to cave in, and finally affects exposure quality.
Summary of the invention
The object of the present invention is to provide a kind of for overcoming mask shadow effect in large NA extreme ultraviolet projection exposure etching system, taking into account again mask arrangement stability, for the extreme ultraviolet photolithographic mask structure of large-numerical aperture.
In order to solve the problems of the technologies described above, technical scheme of the present invention is specific as follows:
For an extreme ultraviolet photolithographic mask structure for large-numerical aperture, comprise successively from the bottom to top: mask substrate; Extreme ultraviolet multilayer high reverse--bias film; Cap layers;
The top of described extreme ultraviolet multilayer high reverse--bias film is provided with the defect for filling absorption layer, in this defect, be filled with described absorption layer; The top of described absorption layer is identical with the overhead height of described extreme ultraviolet multilayer high reverse--bias film;
The graphic structure of described absorption layer is used for carrying the pattern-information of photoetching mask structure.
In technique scheme, the degree of depth of described defect is 40 ~ 70nm.
In technique scheme, the material of described absorption layer is Cr or TaN.
In technique scheme, the top of described absorption layer is also provided with anti-reflecting layer, and its thickness is identical with described cap layers; Other spectral energies that this anti-reflecting layer is used in reduction EUV light source enter system after mask reflection.
In technique scheme, described extreme ultraviolet multilayer high reverse--bias film is provided with 40 ~ 60 cycles.
The invention has the beneficial effects as follows:
Mask arrangement of the present invention and traditional extreme ultraviolet photolithographic mask structurally have similarity; mainly comprise in the vertical there is ultra-low thermal expansion mask substrate, extreme ultraviolet multilayer high reverse--bias film, cap layers, reflection horizon, the structure such as anti-reflecting layer and mask backing layer; then mask exposure pattern in the horizontal, is made up of the echo area of mask and uptake zone.Unlike, in the horizontal, traditional masks has three-dimensional structure, and namely uptake zone has certain thickness, exceeds echo area plane; And mask described in the present invention only has two-dimensional structure in the horizontal, namely uptake zone and echo area are in same plane, and absorption layer is filled in the multilayer film after etching.
Mask arrangement of the present invention can overcome mask shadow effect in large NA extreme ultraviolet projection exposure etching system completely, and film etching depth only has tens nanometer simultaneously, and is filled with absorption layer, therefore structurally more stable.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is the vertical section structure schematic diagram of the extreme ultraviolet photolithographic mask structure for large-numerical aperture of the present invention.
Embodiment
Invention thought of the present invention is:
Extreme ultraviolet photolithographic mask structure for large-numerical aperture of the present invention, utilizes and etches the top of extreme ultraviolet multilayer high reverse--bias film, and is filled into absorption layer material formation absorption layer, to form mask pattern; Instead of wear, until exposed mask substrate, to form mask pattern as of the prior art extreme ultraviolet multilayer high reverse--bias film is all etched.Avoid and easily occur spread thus cause echo area film substrate structural damage in the process of etching extreme ultraviolet multilayer high reverse--bias film, and then reduction reflectivity even causes echo area to cave in, and finally affects the drawback of exposure quality.
Meanwhile, because the top of absorption layer is identical with the overhead height of extreme ultraviolet multilayer high reverse--bias film, the 3D effect of mask is well avoided.
Below in conjunction with accompanying drawing, the present invention is described in detail.
Be illustrated in figure 1 of the present invention for overcoming extreme ultraviolet large NA projection exposure photoetching system mask shadow effect, taking into account again the novel mask arrangement of mask arrangement stability.Structurally there is similarity with traditional extreme ultraviolet photolithographic mask, mainly comprise: the mask substrate 10 with ultra-low thermal expansion, the Mo layer 11 be alternately arranged and Si layer 12 is coated with on its surface after polishing, an extreme ultraviolet multilayer high reverse--bias film 01 is formed by Mo layer 11 and Si layer 12, generally nearly 40 ~ 60 cycles (are that display is clear in Fig. 1 to this extreme ultraviolet multilayer high reverse--bias film 01, not completely draw all cycles, and mask substrate 10 and each rete draw not in scale), finally on extreme ultraviolet multilayer high reverse--bias film 01, be coated with a cap layers shielded 13, its material is generally Ru or SiO
2, thickness is about a few nanometer.Mask substrate 10 back side is coated with the conductive layer 17 of anti-static electrification.So just, obtain the mask blank that a piece is not carried any pattern-information.
On this basis, in mask blank, etch extreme ultraviolet multilayer high reverse--bias film 01 and cap layers 13 by series of process, inject absorption layer 16 wherein, form the pattern-information of photoetching mask structure.Then add anti-reflecting layer 15 and after mask reflection, enter system to reduce other spectral energies in EUV light source.The thickness of absorption layer 16 is relevant with selected material, and in extreme ultraviolet photolithographic mask, usually use Cr or TaN as absorption layer material, its thickness is generally about 40 ~ 70nm, requires relevant with mask light and shade district contrast.Cr absorption layer as 43nm is only logical makes mask contrast reach 0.948, and the Cr absorption layer that the Cr absorption layer of 57.3nm can make mask contrast be better than 0.988,64.6nm then can make mask contrast be better than 0.995.Equally, the employing of TaN then makes with under Cr same thickness, mask has higher contrast, TaN as 43.2nm can make contrast be better than 0.972, the TaN of 57.8nm then can make mask contrast be better than 0.996, the TaN of 65nm then can make contrast higher than 0.999, can think desirable mask.If under identical mask contrast requirement condition, absorber thickness is thinner, then mean that the thickness that multilayer film is etched is less, the multi-layer film structure impact for reflector space is less, and the performance of mask is also higher.
Mask arrangement as shown in Figure 1, can find, when the light oblique illumination of illuminator outgoing is to this kind of mask arrangement, echo area is by complete repeller ultraviolet light, uptake zone then absorbs completely, two intervals do not exist mutually blocks or interferes, thus completely avoid the mask shadow effect faced in large NA projection exposure etching system.Meanwhile, in mask, the etching depth of multilayer film is only 40 ~ 70nm, and in etching process, the vertical structure of mask echo area is farthest protected, thus ensure that amplitude and the homogeneity of echo area reflectivity; In addition, inject absorption layer to etched area and can stablize mask pattern structure further.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among the protection domain of the invention.
Claims (5)
1., for an extreme ultraviolet photolithographic mask structure for large-numerical aperture, comprise successively from the bottom to top: mask substrate; Extreme ultraviolet multilayer high reverse--bias film; Cap layers;
It is characterized in that,
The top of described extreme ultraviolet multilayer high reverse--bias film is provided with the defect for filling absorption layer, in this defect, be filled with described absorption layer; The top of described absorption layer is identical with the overhead height of described extreme ultraviolet multilayer high reverse--bias film;
The graphic structure of described absorption layer is used for carrying the pattern-information of photoetching mask structure.
2. the extreme ultraviolet photolithographic mask structure for large-numerical aperture according to claim 1, is characterized in that, the degree of depth of described defect is 40 ~ 70nm.
3. the extreme ultraviolet photolithographic mask structure for large-numerical aperture according to claim 1, is characterized in that, the material of described absorption layer is Cr or TaN.
4. the extreme ultraviolet photolithographic mask structure for large-numerical aperture according to claim 1, it is characterized in that, the top of described absorption layer is also provided with anti-reflecting layer, and its thickness is identical with described cap layers; Other spectral energies that this anti-reflecting layer is used in reduction EUV light source enter system after mask reflection.
5. the extreme ultraviolet photolithographic mask structure for large-numerical aperture according to any one in claim 1-4, is characterized in that, described extreme ultraviolet multilayer high reverse--bias film is provided with 40 ~ 60 cycles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508408.XA CN104298068A (en) | 2014-09-26 | 2014-09-26 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508408.XA CN104298068A (en) | 2014-09-26 | 2014-09-26 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
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| CN104298068A true CN104298068A (en) | 2015-01-21 |
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| CN201410508408.XA Pending CN104298068A (en) | 2014-09-26 | 2014-09-26 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105069194A (en) * | 2015-07-20 | 2015-11-18 | 中国科学院长春光学精密机械与物理研究所 | Genetic algorithm based optimization method for photoetching attenuation type mask |
| CN105446071A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Mask structure for high NA ultraviolet photolithography objective lens |
| CN106249538A (en) * | 2015-12-21 | 2016-12-21 | 中国科学院长春光学精密机械与物理研究所 | A kind of mask arrangement for extreme ultraviolet photolithographic and preparation method thereof |
| CN108693696A (en) * | 2017-04-12 | 2018-10-23 | 格芯公司 | Extreme ultraviolet lithographic (EUVL) reflection-type mask |
| US10782607B2 (en) | 2017-09-09 | 2020-09-22 | Imec Vzw | Reticles for lithography |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103605260A (en) * | 2013-12-02 | 2014-02-26 | 中国科学院微电子研究所 | Preparation method for nanoscale EUV mask |
| CN104049455A (en) * | 2013-03-15 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof |
-
2014
- 2014-09-26 CN CN201410508408.XA patent/CN104298068A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104049455A (en) * | 2013-03-15 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof |
| CN103605260A (en) * | 2013-12-02 | 2014-02-26 | 中国科学院微电子研究所 | Preparation method for nanoscale EUV mask |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105069194A (en) * | 2015-07-20 | 2015-11-18 | 中国科学院长春光学精密机械与物理研究所 | Genetic algorithm based optimization method for photoetching attenuation type mask |
| CN105069194B (en) * | 2015-07-20 | 2017-12-26 | 中国科学院长春光学精密机械与物理研究所 | A kind of optimization method of the photoetching attenuation type mask based on genetic algorithm |
| CN105446071A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Mask structure for high NA ultraviolet photolithography objective lens |
| CN106249538A (en) * | 2015-12-21 | 2016-12-21 | 中国科学院长春光学精密机械与物理研究所 | A kind of mask arrangement for extreme ultraviolet photolithographic and preparation method thereof |
| CN106249538B (en) * | 2015-12-21 | 2019-09-27 | 中国科学院长春光学精密机械与物理研究所 | A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic |
| CN108693696A (en) * | 2017-04-12 | 2018-10-23 | 格芯公司 | Extreme ultraviolet lithographic (EUVL) reflection-type mask |
| CN108693696B (en) * | 2017-04-12 | 2021-08-27 | 格芯(美国)集成电路科技有限公司 | Extreme ultraviolet lithography (EUVL) reflective mask |
| US10782607B2 (en) | 2017-09-09 | 2020-09-22 | Imec Vzw | Reticles for lithography |
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Application publication date: 20150121 |