CN106249538A - A kind of mask arrangement for extreme ultraviolet photolithographic and preparation method thereof - Google Patents
A kind of mask arrangement for extreme ultraviolet photolithographic and preparation method thereof Download PDFInfo
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- CN106249538A CN106249538A CN201510962313.XA CN201510962313A CN106249538A CN 106249538 A CN106249538 A CN 106249538A CN 201510962313 A CN201510962313 A CN 201510962313A CN 106249538 A CN106249538 A CN 106249538A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000007704 transition Effects 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 17
- 230000000994 depressogenic effect Effects 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 38
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to technical field of integrated circuits, specifically disclose a kind of mask arrangement for extreme ultraviolet photolithographic and preparation method thereof.The preparation method of the present invention includes the process of mask substrate, the making of multilayer film, the making of transition zone, the making of absorbed layer and the making of protective layer successively.The mask arrangement prepared by the method, on the one hand, achieve the function overcoming or suppressing mask shadow effect；On the other hand, in mask arrangement manufacturing process, the multi-layer film structure playing reflectance potentiation need not be performed etching, considerably reduce the damage to echo area multi-layer film structure in mask preparation process, thus improve its structural reliability, improve the performance of mask.
Description
Technical field
The present invention relates to ic manufacturing technology field, particularly to a kind of for extreme ultraviolet photolithographic
Mask arrangement and preparation method thereof.
Background technology
Extreme ultraviolet lithography is to realize 10nm and the head of techniques below node in IC manufacturing industry
Selecting technology, it use wavelength be the extreme ultraviolet of 13.5nm as operation wavelength, due to nearly all thing
This wavelength of verifying is the opaquest, and therefore, all optical elements including its mask are both needed to use plating
It is shaped with the reflecting element of multilayer film.
It is commonly used for the multilayer film of extreme ultraviolet wave band by two kinds of materials of Mo, Si in optical element substrate
Upper alternating deposit forms, its gross thickness about 300nm.Along with technology node in IC manufacturing industry
Constantly advancing, extreme ultraviolet photolithographic equipment needs to develop to large-numerical aperture (NA), the spy on its mask
Levy size (Critical Dimension, CD) also must reduce further, and carry mask pattern information
Absorber thickness limited by material character, there is no substantially reduction so that mask feature size and absorption
Layer thickness is suitable, and then result in the mask shadow effect in extreme ultraviolet etching system, and also referred to as 3D is imitated
The aggravation answered.
2013, Kosuke Takai of Japan et al. made first piece of thin film etching type binary mask and has used
To overcome mask shadow effect present in extreme ultraviolet photolithographic.In the method, research worker is by carving
Multi-layer film structure in erosion mask blank so that it is produce extreme ultraviolet and absorb, replaces tradition binary and covers
Absorbent layer structure in mould, to reach to carry the effect of mask pattern information.
But, in the preparation process of this thin film etching type mask, mask uptake zone is by completely
The multi-layer film structure of etching mask blank realizes, and its etch thicknesses is suitable with thickness of multilayer film, about
300nm, this is relative to 40nm and following (corresponding to 10nm in semiconductor industry and techniques below node)
Mask features for, using during wet etching carries out thin film etching, solvent easily expands
Dissipate thus cause echo area multilayer film substrate to produce defect, affect mask contrast, finally reduce exposure
Quality.
Summary of the invention
It is contemplated that overcome the defect existing for prior art, it is provided that a kind of polar ultraviolet photolithographic is used
The preparation method of mask arrangement and mask arrangement obtained by this method, can not only overcome mask cloudy
Shadow effect, additionally it is possible to avoid the etching to multilayer film.
For achieving the above object, the present invention is by the following technical solutions:
On the one hand, the present invention provides the preparation method of a kind of extreme ultraviolet photolithographic mask arrangement, its feature
Being, described preparation method in turn includes the following steps:
A. the process of mask substrate, transfers to described mask substrate including by design exposing patterns, and is formed
Depressed area and outer convex region；
B. the making of multilayer film, is deposited on multilayer film in the mask substrate after process, described multilayer film by
High refractive index medium layer is formed with low refractive index dielectric layer alternating deposit；
C. the making of transition zone, is deposited on transition zone on described multilayer film；
D. the making of absorbed layer, is arranged at absorbed layer on described transition zone, and described absorbed layer includes can
Absorb the material of luminous energy；
E. the making of protective layer, after removing transition zone and the absorbed layer in described outer convex region, covers protective layer
On the multilayer film in described outer convex region and the absorbed layer of described depressed area, described protective layer is to described mask
Structure plays a protective role；
Described depressed area is the uptake zone of mask arrangement；Described outer convex region is the reflection of described mask arrangement
District.
Preferably, the upper surface of the absorbed layer of described uptake zone is not higher than the multilayer film of described echo area
Upper surface.
Preferably, the protective layer of described mask arrangement is three dimensional structure.
Preferably, the protective layer upper surface of the protective layer upper surface of described uptake zone and described echo area it
Between there is deviant.Described deviant is not more than 50nm.
Preferably, described multilayer film is formed by Mo layer and Si layer alternating deposit, and described multilayer film is provided with
40-60 cycle.
Preferably, the described material that can absorb luminous energy is the material with high absorption coefficient.Described energy
The material enough absorbing luminous energy is selected from one or more in the compound of Ta, the compound of Cr or SnO.
Preferably, one or more in Ru, RuO or Li of the material of described protective layer.
Yet another aspect, the present invention provides a kind of extreme ultraviolet photolithographic mask arrangement, especially by above
Described preparation method prepares.
The beneficial effects of the present invention is: the preparation of the extreme ultraviolet photolithographic mask arrangement that the present invention provides
Method, on the one hand, compared to traditional binary mask structure, prepared mask arrangement is by absorbed layer
Surface is placed in the position that echo area multilayer film upper surface is contour or lower so that uptake zone is to echo area
Light is entirely without blocking, it is achieved thereby that suppress or overcome the function of mask shadow effect；The opposing party
Face, compared to existing thin film etching type mask arrangement or the pouring-in mask arrangement of absorbed layer, the present invention
In the mask arrangement manufacturing process provided, need not be to the multi-layer film structure playing reflectance potentiation
Perform etching, considerably reduce the damage to echo area multi-layer film structure in mask preparation process, from
And improve its structural reliability, improve the performance of mask.
Accompanying drawing explanation
Fig. 1 is the structural representation of the mask substrate according to one embodiment of the invention.
Fig. 2 is the structural representation after the mask substrate etching according to one embodiment of the invention.
Fig. 3 is the structural representation after the making multilayer film according to one embodiment of the invention.
Fig. 4 is the structural representation after the making transition zone according to one embodiment of the invention.
Fig. 5 is the schematic diagram after the making absorbed layer according to one embodiment of the invention.
Fig. 6 is the mask arrangement schematic diagram according to one embodiment of the invention.
Fig. 7 is the mask arrangement schematic diagram according to another embodiment of the present invention.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing
And specific embodiment, the present invention is further elaborated.Should be appreciated that described herein
Specific embodiment is only in order to explain the present invention, and is not construed as limiting the invention.
Fig. 1 to Fig. 6 shows the schematic diagram of each step resulting structures in whole mask arrangement preparation process,
Fig. 1 to Fig. 6 is only the schematic diagram of structure, is not drawn the concrete cycle as actual or be drawn to scale
The thickness of each layer.The system of the mask arrangement of one embodiment of the invention is introduced below in conjunction with Fig. 1 to Fig. 6
Preparation Method.
Mask substrate 00 shown in Fig. 1 is silicon base, concretely Si wafer.Mask substrate 00
Process includes transferring to design exposing patterns described mask substrate, and forms depressed area and outer convex region.
In detailed description of the invention, mask substrate 00, after over cleaning and pretreatment such as dry grade, carries out gluing,
Make photoresist 01 be uniformly distributed in the surface of mask substrate 00, then use photoetching or electron-beam direct writing
Etc. technology, mask substrate 00 is performed etching, design exposing patterns is transferred in mask substrate 00,
Concurrently form depressed area and outer convex region, the most as shown in Figure 2.Wherein, the degree of depth of depressed area is usually
20nm-80nm, concrete with absorbed layer etc. the thickness of other structures relevant, depressed area is corresponding to mask arrangement
Uptake zone 50, outer convex region is corresponding to the echo area 60 of mask arrangement.
Before making multilayer film, first pass through and remove photoresist, remove photoresist 01, then through over cleaning with dry
After PROCESS FOR TREATMENT, the modes such as magnetron sputtering technology can be used, deposit many to mask substrate 00
Tunic 10, multilayer film 10 is formed by high refractive index medium layer and low refractive index dielectric layer alternating deposit, as
Shown in Fig. 3.Concrete, multilayer film 10 is Mo/Si multilamellar highly reflecting films, for first depositing Mo layer
11 or Si layers 12 do not limit, as long as ensureing that Mo layer 11 and Si layer 12 are alternately laminated,
The surface profile distribution of the multilayer film 10 formed is similar in mask substrate 00 design exposing patterns
Distribution.
In a preferred embodiment, the cycle of multilayer film 10 is 40-60, more preferably 40；
The periodic thickness of multilayer film 10 is about 7nm, and in multilayer film 10, the periodic thickness in each cycle can
With identical, it is also possible to different, Fig. 1 to Fig. 7 the most completely draws all of cycle.
After depressed area and outer convex region all deposit multilayer film 10, more uniformly sink to the surface of multilayer film 10
Long-pending transition zone 20, the most as shown in Figure 4.Wherein, the material of transition zone 20 can be photoresist or other
Dissolve in the solid matter in solvent, as long as being capable of directly contacting with solvent etc. and reacting, or
Make the absorbed layer 30 being attached on the transition zone 20 of echo area 60 come off by other approach, expose many
Tunic 10 surface, thus realize the reflection of extreme ultraviolet, the echo area forming mask acts on.
Afterwards, the various physically or chemically deposition techniques such as thermal evaporation plated film or magnetron sputtering are used, in mistake
Crossing layer 20 surface deposit absorbent layer 30, the upper surface of the absorbed layer 30 of uptake zone 50 is less than echo area 60
The surface of multilayer film 10, the most as shown in Figure 5.This structure arranges and enables to uptake zone 50 to echo area
The light of 60 is entirely without blocking, it is achieved thereby that overcome or suppress the function of mask shadow effect.
Absorbed layer 30 includes the material that can absorb luminous energy, specifically can be had high suction by extreme ultraviolet waveband
The material receiving coefficient is constituted, and plays absorption extreme ultraviolet, carries the effect of mask information.
Concrete, high absorption coefficient material is selected from the compound of Ta, Cr and compound thereof or SnO
Plant or multiple.Wherein, SnO, owing to possessing relatively high permeability at deep ultraviolet, may be used for extreme ultraviolet photolithographic
The deep ultraviolet wave band detection of mask.
Structure shown in the Fig. 5 that will be formed is positioned in solvent so that the transition zone 20 of echo area 60 occurs
Dissolve, and make the absorbed layer 30 being attached to this region come off, expose multilayer film 10 surface, it is achieved be extremely purple
The reflection of outer light.Meanwhile, the transition zone 20 of uptake zone 50 due to cannot with solvent occur directly contact,
Can't dissolve, the absorbed layer 30 being therefore attached to this is retained.The transition zone 20 that this place retains
And the functional structure of non-mask, simply the most removable remaining knot in the preparation process of this mask arrangement
Structure, but the performance of mask arrangement can't be produced any harmful effect.
Finally, through over cleaning, it is dried etc. after PROCESS FOR TREATMENT, upwards resulting structures surface deposition during
Protective layer 40, obtains last mask arrangement as shown in Figure 6.This protective layer 40 is covered mainly for suppression
Mould high energy particle under oxidation and working environment sputters the damage that causes, the material of protective layer 40 selected from Ru,
One or more in RuO or Li.
In mask arrangement shown in Fig. 6, protective layer 40 is three dimensional structure, the protective layer of uptake zone 50
There is deviant between protective layer 40 upper surface of 40 upper surfaces and echo area 60, deviant is not more than
100nm, specially several nanometers to several tens of nanometers.In mask substrate 00 etching process, specifically etch
The thickness of the degree of depth and absorbed layer 30, and this deviant is relevant.This mask arrangement is not to multilayer film
10 directly perform etching, while not affecting multilayer film 10 performance, additionally it is possible to overcome mask shade completely
Impact, improve mask arrangement performance.
It addition, through the similar preparation process shown in Fig. 1 to Fig. 6, finally obtain another such as
Mask arrangement shown in Fig. 7.Differing only in preparation process, the etching process of mask substrate 00
In, etching depth needs to reduce, it addition, when deposit absorbent layer 30, the absorbed layer of uptake zone 50
The upper surface of 30 is concordant with the upper surface of the multilayer film 10 of echo area 60, the mask arrangement finally prepared
In, protective layer 40 upper surface of uptake zone 50 and protective layer 40 upper surface of echo area 60 are in same
One plane.
This preparation process without directly performing etching multilayer film 10, will not destroy multilayer film 10 equally
Structure, more will not reduce the performance of multilayer film 10, it is possible to increase the performance that mask arrangement is overall.
The detailed description of the invention of present invention described above, is not intended that limiting the scope of the present invention.
Any according to other changes accordingly various done by the technology design of the present invention and deformation, all should wrap
Containing within the scope of the invention as claimed.
Claims (10)
1. the preparation method of an extreme ultraviolet photolithographic mask arrangement, it is characterised in that described preparation side
Method in turn includes the following steps:
A. the process of mask substrate, transfers to described mask substrate including by design exposing patterns, and is formed
Depressed area and outer convex region；
B. the making of multilayer film, is deposited on multilayer film in the mask substrate after process, described multilayer film by
High refractive index medium layer is formed with low refractive index dielectric layer alternating deposit；
C. the making of transition zone, is deposited on transition zone on described multilayer film；
D. the making of absorbed layer, is arranged at absorbed layer on described transition zone, and described absorbed layer includes can
Absorb the material of luminous energy；
E. the making of protective layer, after removing transition zone and the absorbed layer in described outer convex region, covers protective layer
On the multilayer film in described outer convex region and the absorbed layer of described depressed area, described protective layer is to described mask
Structure plays a protective role；
Described depressed area is the uptake zone of mask arrangement；Described outer convex region is the reflection of described mask arrangement
District.
2. preparation method as claimed in claim 1, it is characterised in that the absorbed layer of described uptake zone
Upper surface be not higher than the upper surface of multilayer film of described echo area.
3. preparation method as claimed in claim 1, it is characterised in that the guarantor in described mask arrangement
Sheath is three dimensional structure.
4. preparation method as claimed in claim 1, it is characterised in that the protective layer of described uptake zone
Deviant is there is between the protective layer upper surface of upper surface and described echo area.
5. preparation method as claimed in claim 4, it is characterised in that described deviant is not more than
50nm。
6. preparation method as claimed in claim 1, it is characterised in that described multilayer film is by Mo layer
Being formed with Si layer alternating deposit, described multilayer film is provided with 40-60 cycle.
7. preparation method as claimed in claim 1, it is characterised in that described can absorb luminous energy
Material is the material with high absorption coefficient.
8. preparation method as claimed in claim 1, it is characterised in that described can absorb luminous energy
One or more in the compound of Ta, the compound of Cr or SnO of material.
9. preparation method as claimed in claim 1, it is characterised in that the material choosing of described protective layer
One or more in Ru, RuO or Li.
10. an extreme ultraviolet photolithographic mask arrangement, it is characterised in that described mask arrangement is by right
In requirement 1-9, the preparation method described in any one prepares.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510962313.XA CN106249538B (en) | 2015-12-21 | 2015-12-21 | A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510962313.XA CN106249538B (en) | 2015-12-21 | 2015-12-21 | A kind of mask arrangement and preparation method thereof for extreme ultraviolet photolithographic |
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| Publication Number | Publication Date |
|---|---|
| CN106249538A true CN106249538A (en) | 2016-12-21 |
| CN106249538B CN106249538B (en) | 2019-09-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108693696A (en) * | 2017-04-12 | 2018-10-23 | 格芯公司 | Extreme ultraviolet lithographic (EUVL) reflection-type mask |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110212392A1 (en) * | 2008-10-29 | 2011-09-01 | Hoya Corporation | Photomask blank, photomask, and methods of manufacturing the same |
| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
-
2015
- 2015-12-21 CN CN201510962313.XA patent/CN106249538B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110212392A1 (en) * | 2008-10-29 | 2011-09-01 | Hoya Corporation | Photomask blank, photomask, and methods of manufacturing the same |
| CN104298068A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Extreme-ultraviolet photoetching mask structure for large-value pore diameter |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108693696A (en) * | 2017-04-12 | 2018-10-23 | 格芯公司 | Extreme ultraviolet lithographic (EUVL) reflection-type mask |
| CN108693696B (en) * | 2017-04-12 | 2021-08-27 | 格芯(美国)集成电路科技有限公司 | Extreme ultraviolet lithography (EUVL) reflective mask |
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| CN106249538B (en) | 2019-09-27 |
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