CN106232877A - Manufacture the method for carborundum crystal ingot, carborundum kind substrate, silicon carbide substrates, semiconductor device and the method for manufacture semiconductor device - Google Patents

Manufacture the method for carborundum crystal ingot, carborundum kind substrate, silicon carbide substrates, semiconductor device and the method for manufacture semiconductor device Download PDF

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CN106232877A
CN106232877A CN201580020500.4A CN201580020500A CN106232877A CN 106232877 A CN106232877 A CN 106232877A CN 201580020500 A CN201580020500 A CN 201580020500A CN 106232877 A CN106232877 A CN 106232877A
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substrate
carborundum
film
type surface
sic
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佐佐木信
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Abstract

A kind of method manufacturing carborundum crystal ingot comprises the following steps: prepare carborundum kind substrate (10a), and described carborundum kind substrate has the first first type surface (P1) and the second first type surface (P2) arranged on the contrary with described first first type surface (P1)；At a temperature of not higher than 2000 DEG C, described second first type surface (P2) upper formation metal carbides film (11)；And while be formed with described carborundum kind substrate (10a) of described metal carbides film (11) by supporting member (51a) support overlay, on described first first type surface (P1), grow single-crystal silicon carbide (100) by distillation.In growth step, being supported by the region in addition to part (SD) is in the region except having formed described metal carbides film (11) of the surface of described carborundum kind substrate (10a) supported by described supporting member (51a).

Description

Manufacture the method for carborundum crystal ingot, carborundum kind substrate, silicon carbide substrates, quasiconductor Device and the method manufacturing semiconductor device
Technical field
It relates to manufacture the method for carborundum (SiC) crystal ingot, carborundum kind (seed) substrate, silicon carbide substrates, half Conductor device and the method manufacturing semiconductor device.
Background technology
Most of SiC boule (monocrystalline) be by distillation (also referred to as " the Lely method of improvement ") manufacture [such as, See Japanese Patent Publication No.2001-139394 (PTD 1) and Japanese Patent Publication No.2008-280196 (PTD 2)].
Reference listing
Patent documentation
PTD 1: Japanese Patent Publication No.2001-139394
PTD 2: Japanese Patent Publication No.2008-280196
Summary of the invention
Technical problem
It is an object of the invention to provide have a small amount of crystal defect carborundum crystal ingot, can be used for manufacture carborundum crystal ingot Carborundum kind substrate, derive from the silicon carbide substrates of carborundum crystal ingot and include the semiconductor device of silicon carbide substrates.
The solution of problem
A kind of method manufacturing carborundum crystal ingot according to an aspect of this disclosure comprises the following steps: prepare carborundum Planting substrate, described carborundum kind substrate has the first first type surface and the second master meter arranged on the contrary with described first first type surface Face；At a temperature of not higher than 2000 DEG C, described second first type surface forms metal carbides film；And by supporting structure While part support overlay is formed with the described carborundum kind substrate of described metal carbides film, main described first by distillation Single-crystal silicon carbide, in growth step, the surface of the described carborundum kind substrate supported by described supporting member is grown on surface Be supported by the region in addition to being partially in the region except having formed described metal carbides film.
According to a kind of carborundum kind substrate of an aspect of this disclosure, described carborundum kind substrate includes the first first type surface And the second first type surface arranged on the contrary with described first first type surface, described first first type surface is crystal growing surface, described Having metal carbides film above two first type surfaces, described metal carbides film includes in titanium carbide, vanadium carbide and zirconium carbide extremely Few one.
A kind of semiconductor device according to an aspect of this disclosure includes that silicon carbide substrates, described silicon carbide substrates include Select at least one of group of the metallic element of free titanium, vanadium and zirconium composition, the concentration of described metallic element not less than 0.01ppm and It is not more than 0.1ppm.
Beneficial effects of the present invention
More than according to, it is provided that there is the carborundum crystal ingot of a small amount of crystal defect, can be used for manufacturing carborundum crystal ingot Carborundum kind substrate, derive from the silicon carbide substrates of carborundum crystal ingot and include the semiconductor device of silicon carbide substrates.
Accompanying drawing explanation
Fig. 1 is the flow chart of the overview illustrating the method manufacturing carborundum crystal ingot according to an aspect of this disclosure.
Fig. 2 is the flow chart of the example illustrating the step forming metal carbides film according to an aspect of this disclosure.
Fig. 3 is the flow chart of the example illustrating the step by metal film carbonization according to an aspect of this disclosure.
Fig. 4 is the schematic sectional of the example of the step illustrating the growth single-crystal silicon carbide according to an aspect of this disclosure Figure.
Fig. 5 is the signal of another example of the step illustrating the growth single-crystal silicon carbide according to an aspect of this disclosure Property sectional view.
Fig. 6 is the surface illustrating the carborundum kind substrate supported by supporting member according to an aspect of this disclosure It is supported by the schematic plan view of the example of part.
Fig. 7 is the surface illustrating the carborundum kind substrate supported by supporting member according to an aspect of this disclosure It is supported by the schematic plan view of another example of part.
Fig. 8 is the schematic sectional of the example illustrating the step by metal film carbonization according to an aspect of this disclosure Figure.
Fig. 9 is the schematic diagram of the example illustrating the silicon carbide substrates according to an aspect of this disclosure.
Figure 10 is the schematic cross sectional views of the example of the structure illustrating the semiconductor device according to an aspect of this disclosure.
Figure 11 is the flow chart of the overview illustrating the method manufacturing semiconductor device according to an aspect of this disclosure.
Figure 12 is the schematic cross sectional views of the example illustrating the silicon carbide epitaxy substrate according to an aspect of this disclosure.
Figure 13 is the schematic cross sectional views illustrating ion implanting step.
Figure 14 is to illustrate oxidation film of grid forming step and the schematic cross sectional views of electrode forming step.
Figure 15 is to illustrate interlayer dielectric forming step and the schematic cross sectional views of electrode forming step.
Detailed description of the invention
[description of embodiment of this disclosure]
First, will describe with tabular form and embodiment of the disclosure.In the following description, identical or corresponding element quilt Specify by identical reference marks and be lack of repetition.Indicate about crystallography in this manual, represent with [] Individual orientation, with the conjunction of<>presenting set to, represents individual plane with (), and gathers plane with { } representative.It addition, negative crystallography Index is typically attached "-" (horizontal stripe) by side in number and is expressed, but in this manual by subsidiary negative before numeral Number express.
Distillation be at high temperature sublimation source material and on kind of crystalline substance by raw for the crystal that recrystallizes of source material after distillation Growth process.Generally, in this process, source material is accommodated in the bottom of growing container (crucible such as, being made up) of graphite In part, and plant supporting member that crystalline substance is attached and is fixed to be positioned in the upper part of growing container (such as, crucible Capping).In order to fixed race is brilliant, it is widely used that and graphite fine particle is disperseed in organic solvent and the kind crystalline substance obtained is fixed Agent (for example, with reference to PTD 1).
Plant brilliant fixative to be carbonized because of heated, and be used as Heat-resistant adhesive layer.Therefore, kind crystalline substance can be maintained at and prop up In bearing member, even if (about 2300 DEG C) are not the most fallen in growing container in high temperature environments.But, produce during solvent volatilization Raw bubble (space) can be retained in this adhesive phase.If adhesive phase exists space, then occur from kind of a brilliant bonding The space distillation (distillation of the so-called back side) towards supporting member is passed through on agent surface (backside surface), thus causes from backside surface The desorption of some elements.The roughness (defect) at the back side caused because of the desorption of element travels to growing surface, so After propagate further into growth crystal, and it appears for micropipe defects.
In order to tackle this problem, PTD 2 discloses a kind of method kind of crystalline substance being fixed to supporting member by titanium carbide.Root According to PTD 2, in the adhesive phase being made up of titanium carbide, there is no space so that can prevent the back side from distilling.
But, this method still has the space of improvement.It is to say, due to kind of a crystalline substance (SiC) and supporting member (generally, C) There is different thermal coefficient of expansions, therefore kind of a brilliant backside surface fix (constraint) in the case of supporting member will kind brilliant and Supporting member is exposed to hot environment and causes the list on growing surface due to the swell increment difference kind between crystalline substance and supporting member Thermal stress that is brilliant and that plant in crystalline substance, thus allow the appearance of the defect (such as, dislocation defects) caused because of this thermal stress.
The present inventor is it is estimated that crystalline substance can be planted certainly by permission in the case of kind of a crystalline substance is not tied to supporting member By thermal expansion, solve problem described above, and studied the one of the disclosure further based on this design Individual aspect.
It is to say, [1] includes following step according to a kind of method manufacturing carborundum crystal ingot of an aspect of this disclosure Rapid: prepare carborundum kind substrate, described carborundum kind substrate has the first first type surface and arranges on the contrary with the first first type surface Second first type surface；At a temperature of not higher than 2000 DEG C, form metal carbides film on the second major surface；And by propping up While bearing member support overlay is formed with the carborundum kind substrate of metal carbides film, given birth on the first major surface by distillation Long single-crystal silicon carbide, in growth step, be supported by the carborundum kind substrate of member supporting surface be supported by be partially in In region in addition to having formed the region of metal carbides film.
In above manufacture method, SiC kind substrate (plant crystalline substance) be supported in except the second first type surface (backside surface) it At an outer part.Second first type surface is unrestricted and SiC kind substrate can free thermal expansion, thus alleviate SiC kind substrate and The thermal stress occurred in SiC single crystal (growth crystal).Therefore, the appearance of the defect caused by thermal stress can be suppressed.
Although additionally, under the such pattern causing the back side to distil between the second first type surface and supporting member usual shape Become gap, but in above manufacture method, prevent film owing to metal carbides film is formed as distillation on the second major surface, institute So that such back side can also be suppressed to distil.Here, the fusing point of metal carbides film is preferably higher than the sublimation temperature of SiC.Separately Outward, at not higher than 2000 DEG C (it is to say, temperature of the sublimation temperature less than SiC), metal carbides film is formed.Therefore, exist Formed during metal carbides film, it is suppressed that and then make the distillation of the coarse element from SiC kind substrate of substrate surface.
Therefore, according to above manufacture method, can have a small amount of crystalline substance in the upper growth of the first first type surface (crystal growing surface) The SiC single crystal of volume defect, the simultaneously distillation of the suppression back side and the appearance of thermal stress.
[2] at least one during metal carbides film can include titanium carbide, vanadium carbide and zirconium carbide.
Owing to including that the metal carbides film of titanium carbide (TiC), vanadium carbide (VC) and zirconium carbide (ZrC) has than SiC's Fusing point that sublimation temperature is high and can be dense film, therefore can suppress the back side to distil.
[3] step of formation metal carbides film may be included in and forms metal film on the second first type surface and by metal film carbon The step changed.This is because, metal carbides film can be readily formed.
[4] step of metal film carbonization be may be included in the first first type surface prone in the case of carborundum kind substrate is put Put in carbon substrate, and while metal film supply carbon, heat the step of metal film.This is because, can easy landform Becoming metal carbides film, the first first type surface being used simultaneously as growing surface is protected.
[5] step forming metal carbides film may additionally include flat metal carbonization after the step by metal film carbonization The step of thing film.This is because, the carbon of excess can be reduced.
[6] in growth step, carborundum kind substrate may be provided at above source material, has certain distance with source material, the One first type surface can be supported by part can be at the end of the first first type surface in the face of source material.This is because, according to this pattern, In the case of SiC kind substrate is unfettered, SiC single crystal can be grown on the first major surface.
[7] according to a kind of carborundum kind substrate of an aspect of this disclosure include the first first type surface and with the first first type surface The second first type surface arranged on the contrary, the first first type surface is crystal growing surface, has metal carbides above the second first type surface Film, metal carbides film includes at least one in titanium carbide, vanadium carbide and zirconium carbide.
This SiC kind substrate have on the second first type surface (backside surface) include in TiC, VC and ZrC at least one Metal carbides film, therefore can be used for not using the method manufacturing SiC boule of kind of brilliant fixative.
[8] film thickness of metal carbides film can be not less than 0.1 μm and no more than 1.0mm.This is because, the back side can be suppressed Distillation, avoids high cost simultaneously.
[9] variation coefficient of the film thickness of metal carbides film can be not more than 20%.This is because, thermal stress can be alleviated.
[10] comprise the following steps according to the method manufacturing carborundum crystal ingot of an aspect of this disclosure: prepare above root According to the carborundum kind substrate described in any one in [7] to [9]；And supporting the same of carborundum kind substrate by supporting member Time, by distillation, grow single-crystal silicon carbide on the first major surface, in growth step, be supported by the carborundum of member supporting Being supported by the region in addition to being partially in the region except having formed metal carbides film of the surface of kind substrate.
According to this manufacture method, can grow SiC single crystal on the first major surface, the suppression back side distils and might as well simultaneously Hinder the free wxpansion of SiC kind substrate.Therefore, can manufacture there is the SiC boule of a small amount of crystal defect.
[11] according to a kind of silicon carbide substrates of an aspect of this disclosure by will be with above according to described in [10] The substrate that the carborundum crystal ingot that manufacture method obtains carries out cutting into slices and obtains, substrate includes the metal unit forming metal carbides film Element, the concentration of this metallic element is not less than 0.01ppm and no more than 0.1ppm.
By will above according on the first first type surface of the SiC kind substrate described in any one in [7] to [9] growth SiC boule is cut into slices, and obtains this SiC substrate.Therefore SiC substrate includes forming the second first type surface being formed at SiC kind substrate The metallic element of the metal carbides film on (backside surface).This SiC substrate inhibits the back side distillation during growth and relaxation Thermal stress, therefore there is a small amount of defect and high-crystal quality.It addition, the metallic element in the range of concentrations above is considered half-and-half The impact of the performance of conductor device is little.Therefore, this SiC substrate can help to improve the performance of semiconductor device.It should be noted that with On " ppm " refer to " mass fraction ".
[12] silicon carbide substrates is included according to a kind of semiconductor device of an aspect of this disclosure, this silicon carbide substrates bag Include at least one of group of the metallic element selecting free titanium, vanadium and zirconium composition, the concentration of this metallic element be not less than 0.01ppm and It is not more than 0.1ppm.
[13] in above [12], silicon carbide substrates can be SI-substrate.SI-substrate used herein Refer to have not less than 105The substrate of the resistance of Ω cm.Such as, the upper limit of resistance can be 1017Ω·cm.SI-substrate In the concentration of p-type impurity can be not less than 0cm-3And less than 1017cm-3.The concentration of the n-type impurity in SI-substrate can not be little In 0cm-3And less than 1017cm-3。
[14] in above [12], silicon carbide substrates can be n-type substrate.Such as, p-type impurity in n-type substrate Concentration can be not less than 1017cm-3.Such as, the upper limit of the concentration of p-type impurity can be 1020cm-3。
[15] in above [12], silicon carbide substrates can be p-substrate.Such as, n-type impurity in p-substrate Concentration can be not less than 1017cm-3.Such as, the upper limit of the concentration of n-type impurity can be 1020cm-3。
[16] comprise the following steps according to a kind of method manufacturing semiconductor device of an aspect of this disclosure: prepare with Silicon carbide substrates described in upper basis [11]；And process silicon carbide substrates.
[details that embodiment of the disclosure]
Although will be described in now embodiment of the disclosure (also called hereinafter " the present embodiment "), but the present embodiment It is not limited to this.
[method manufacturing carborundum crystal ingot]
Fig. 1 is the flow chart of the overview illustrating the manufacture method according to the present embodiment.As shown in fig. 1, this manufacture method Including preparing, the step (S100) of SiC kind substrate 10a, the step (S200) forming metal carbides film 11 and growth SiC are mono- The step (S300) of brilliant 100.Fig. 4 is the schematic cross sectional views of the step illustrating growth SiC single crystal 100.As shown in Figure 4, exist In the manufacture method of the present embodiment, unfettered at the second first type surface P2 and do not hinder the SiC kind free thermal expansion of substrate 10a In the case of, the upper metal carbides film 11 that formed of backside surface (the second first type surface P2) at SiC kind substrate 10a, and in growth The upper growth in surface (the first first type surface P1) SiC single crystal 100.This manufacture method can suppress back side liter by metal carbides film 11 China, and can alleviate in SiC kind substrate 10a or SiC single crystal 100 occur thermal stress, thus produce have a small amount of crystal lack The SiC single crystal 100 fallen into, i.e. SiC boule.Further, since metal carbides film 11 occurs the probability vaporized low, therefore than SiC The metallic element that metal carbides film 11 includes unlikely is impregnated in SiC single crystal 100.Now, each step will be described.
<preparing the step of carborundum kind substrate: S100>
In this step, preparation SiC kind substrate 10a.SiC kind substrate 10a has the first first type surface P1 and leads with first The second first type surface P2 that surface P1 is arranged on the contrary.First first type surface P1 is crystal growing surface, and the second first type surface P2 is its back of the body Surface, face.Such as, the first first type surface P1 can be in (0001) plane [so-called Si face], or (000-1) plane [so-called C Face] on.
SiC kind substrate is prepared by polymorphous SiC boule with such as 4H, 6H is sliced into certain thickness 10a.The polymorphic of 4H is particularly useful for semiconductor device.Here, it is desirable to cut into slices so that SiC kind substrate 10a's First first type surface P1 is relative to { 0001} planar tilt is not less than 1 ° and no more than 10 °.That is, it is desirable to SiC kind serves as a contrast End 10a have relative to 0001} plane not less than 1 ° and the deflecting angle of no more than 10 °.This is because, can be by with this side The deflecting angle of formula restriction SiC kind substrate 10a suppresses the crystal defect of such as basal plane dislocation.This deflecting angle is the least In 1 ° and no more than 8 ° particularly preferably, not less than 2 ° and no more than 8 °.Such as, offset direction is<11-20>direction.
Such as, the flat shape of SiC kind substrate 10a is circular.The diameter of SiC kind substrate 10a is such as not less than 25mm, excellent Selection of land is not less than 100mm (such as, not less than 4 inches), more preferably not less than 150mm (such as, not less than 6 inches).SiC kind The diameter of substrate 10a is the biggest, and the diameter of the SiC boule that can produce is the biggest.Therefore, the number of the chip of available single wafer manufacturing Amount can increase, to cut down the manufacturing cost of semiconductor device.Although the crystal being generally difficult to control in the SiC boule that diameter is big lacks Fall into, but according to the present embodiment, while keeping crystal mass, the most even diameter can be produced brilliant not less than the SiC of 100mm Ingot.The thickness of SiC kind substrate 10a is the most about 0.5 to 5.0mm, preferably about 0.5 to 2.0mm.
After cutting into slices, it may be desirable to make the second first type surface P2 of SiC kind substrate 10a stand polishing, reactive ion Etchings (RIE) etc. are with flat surface.So contribute to being formed uniform metal carbides film 11 on the second first type surface P2.Example As, diamond abrasive grain can be used to be polished.Such as, for arithmetic average roughness Ra, smooth tolerance is the most little In 1 μm.It is highly preferred that perform chemically mechanical polishing (CMP) further, increase because the result brought is flatness.Such as, glue Body silicon oxide is used for CMP.
Here, in order to improve the crystal mass of SiC single crystal 100, the first first type surface P1 also can stand the smooth process being similar to. The smooth process on the first first type surface P1 can be carried out after formation metal carbides film 11 explained below.
<forming the step of metal carbides film: S200>
In this step, at a temperature of not higher than 2000 DEG C, the second first type surface P2 forms metal carbides film 11.This temperature is limited to not higher than 2000 DEG C, because if temperature is higher than 2000 DEG C, then SiC can distil, and makes SiC kind substrate 10a's Rough surface.
(metal carbides film)
It is desirable that, metal carbides film 11 can be formed at not higher than 2000 DEG C, and by having upon formation The material of the fusing point of the temperature (2100 DEG C to 2500 DEG C) during growing higher than SiC crystal is formed.It is also contemplated that, metallic carbide Thing film 11 is the dense film wherein with a small amount of space.It is so to suppress the back side during crystal growth to distil.Meet this The example of the material of a little conditions includes the carbide of refractory metal.More specifically, example includes TiC, VC and ZrC.Metal carbon Compound film 11 can be formed by selected from a type of material of TiC, VC and ZrC or the material of two or more type.When by When the material of two or more types is formed, Ti, V and C such as can form complex chemical compound.Additionally, metal carbides film 11 Can be single layer or the laminates of multiple layers.This is because, the back side can be suppressed in either case to distil.It is to say, Metal carbides film 11 can include at least one in TiC, VC and ZrC.
When expressing compound with the chemical formula of such as " TiC, VC and ZrC " in this manual, any tradition will be included Known atomic ratio, and it is not necessarily limited to the atomic ratio in the range of chemical equivalent, unless atomic ratio is particularly limited.Such as, art The atomic ratio that language " TiC " is not limited between " Ti " and " C " is 50:50, but includes any atomic ratio being conventionally known.
Can be by depositing metallic element (example on the second first type surface P2 with such as chemical gaseous phase deposition (CVD), sputtering etc. As, Ti, V and Zr) and carbon (C) form metal carbides film 11, or can by be initially formed metal carbides film 11 and with After metal film 11a carbonization is formed metal carbides film 11, as will be described below.
Fig. 2 is the flow chart of the example illustrating the step (S200) forming metal carbides film 11.As shown in Figure 2, this Individual step (S200) can include the step (S210) such as forming metal film 11a on the second first type surface P2, and by metal film 11a The step (S220) of carbonization.The step for may additionally include the step (S220) of metal film 11a carbonization after flat metal The step (S230) of carbide membrane 11.Such as, the growing container 50 (such as, crucible) that can use during crystal growth performs These steps.Manufacture can be simplified in such a mode process.
(forming the step of metal film: S210)
In this step, the second first type surface P2 forms metal film 11a.Such as, can prepare and have corresponding to metal The metallic plate of the suitable depth of film 11a, and place it on the second first type surface P2.Alternatively, CVD can be passed through, spatter Penetrate, the second first type surface P2 is formed metal film 11a.
(step by metal film carbonization: S220)
Then, by metal film 11a carbonization.The flow chart of the proper operation process in (S220) the step for that Fig. 3 being to illustrate. Fig. 8 is the schematic cross sectional views illustrating operation.
As shown in figures 3 and 8, it is preferable that first, in the case of the first first type surface P1 is prone, perform SiC kind The step (S221) that substrate 10a is placed in carbon substrate 31.So will suppress the surface roughness of the first first type surface P1.Carbon substrate 31 are not particularly limited, it is preferred that be the high flexibility material of such as carbon plate material.This is because, the first first type surface P1 can be subject to Protection.
Then, perform in the step (S222) heating metal film 11a while metal film 11a supply carbon.Here, can press Any form supply carbon.Such as, gaseous form, powder type, sheet-form or the carbon of plate form can be supplied.Such as, heating temperature Degree is not less than the fusing point of metal film 11a and not higher than 2000 DEG C.Heating atmosphere is preferably vacuum atmosphere (pressure reduction atmosphere) Or the inert gas atmosphere of such as argon (Ar).Then, metal film 11a be arranged on the fusing point being not less than metal film 11a and Keep about 1 to 24 hour under target temperature in the range of not higher than 2000 DEG C, be consequently formed metal carbides film 11.
When metal film 11a be metallic plate and with plate form supply carbon (as shown in Figure 8) time, can execute above carbon plate 32 Add suitable load, make metal film 11a and carbon plate 32 intimate contact with one another, thus be formed without gap betwixt.Therefore, available equal Even metal carbides film 11, and metal carbides film 11 can strongly adherent in the second first type surface P2.In order to apply load, example As, weight can be placed on carbon plate 32.Here, weight is preferably the most heatable main body.
As it has been described above, metal carbides film 11 can being flattened upon formation.Therefore, the carbon of excess can be reduced.Also may be used The film thickness of regulation metal carbides film 11 and film thickness distribution.Specifically, such as, the surface of metal carbides film 11 can be passed through RIE etc. are dry-etched or polished by CMP etc..
(film thickness of metal carbides film)
Preferably, the film thickness of metal carbides film 11 is not less than 0.1 μm and no more than 1.0mm.If film thickness is less than 0.1 μm, then can not fully suppress the back side to distil.On the other hand, owing to 1.0mm be enough to provide the function of suppression distillation, therefore film Thickness is uneconomic more than 1.0mm.But, if having ignored business efficiency, acceptable film thickness is more than 1.0mm.Metallic carbide The film thickness of thing film 11 is more preferably not less than 1.0 μm and no more than 1.0mm, is further preferably not less than 10 μm and is not more than 1.0mm, most preferably not less than 100 μm and no more than 1.0mm.So will strengthen the effect of suppression back side distillation.
(variation coefficient of film thickness)
Preferably, the variation coefficient of the film thickness of metal carbides film 11 is less than 20%.This is because, at crystal growth Period obtains the relatively narrow temperature distribution in metal carbides film 11, thereby reduces appearance and the concentration of thermal stress.Used here as " variation coefficient of film thickness " refer to the index that film thickness is distributed, this index is to be expressed as by by the standard deviation of film thickness The value of the percentage ratio that difference obtains divided by the meansigma methods of film thickness.In order to calculate variation coefficient, will be (at least 5, multiple positions Position, preferably 10 or more position, more preferably 20 or more position) measure film thickness.Can be by traditionally Known device measures film thickness.Such as, Fourier transform infrared spectrometer (FT-IR) can be used.This variation coefficient is more excellent Selection of land be not more than 18% particularly preferably, no more than 15%.So will reduce the appearance of thermal stress.
<carborundum kind substrate>
By above-mentioned step (S100) and step (S200), prepare the manufacture method available SiC kind of the present embodiment Substrate 10a.As shown in Figure 4, SiC kind substrate 10a includes the first first type surface P1 and arranges on the contrary with the first first type surface P1 Second first type surface P2.Here, the first first type surface P1 is crystal growing surface, as shape on the second first type surface P2 of its backside surface Become to have metal carbides film 11.As it has been described above, metal carbides film 11 can include at least one in TiC, VC and ZrC.
<method of growth single-crystal silicon carbide: S300>
In this step, be there is the SiC kind substrate 10a of metal carbides film 11 by use, at SiC kind substrate 10a Upper growth SiC single crystal 100.
As shown in Figure 4, preparation includes the growing container 50 of supporting member 51a and container body 52.Growing container 50 by Such as graphite is made.Growing container 50 comprises the multicrystal powder of SiC of such as powdery as source material 1.Supporting member 51a is also Capping as growing container 50.Supporting member 51a is provided with the supporting part ST for supporting SiC kind substrate 10a.SiC kind Substrate 10a is arranged on above source material 1, has certain distance with source material 1 so that as the first first type surface P1 face of growing surface To source material 1.
Here, SiC kind substrate 10a passes through supporting part ST, and be supported in the first first type surface P1 end is supported by part At SD.It is to say, part SD that is supported by being supported by the surface of the SiC kind substrate 10a of component 51a supporting is in except wherein Formed in the region outside the region of metal carbides film 11.Therefore, metal carbides film 11 and supporting member 51a it Between there is gap, and the second first type surface P2 side of SiC kind substrate 10a is unrestricted.Although radiator, heating element heater etc. can quilts Insert to keep the temperature environment during crystal growth in this gap, but SiC kind substrate 10a the most in this case On degree of restraint minimum.By supporting part ST by assembling, adhesion etc. and it is not supported by part SD and is fixed to one another, Thus do not interfere with the free wxpansion of SiC kind substrate 10a.It is to say, be preferably to be placed on SiC kind substrate 10a to prop up Bearing portion is divided on ST.
Fig. 6 is the schematic plan view illustrating the example being supported by part SD on the first first type surface P1.Such as institute in Fig. 6 Show, it is preferable that there is at least three and be supported by part SD.So by the attitude of stable SiC kind substrate 10a.Fig. 7 is to illustrate first The schematic plan view of another example being supported by part SD on first type surface P1.As shown in Figure 7, it is highly preferred that arrange It is supported by part SD so that it is around the periphery of SiC kind substrate 10a.This is because, the attitude of SiC kind substrate 10a can be with more Stable mode is maintained.
Then, as shown in Figure 4, SiC single crystal 100 is grown by distillation.It is to say, by arranging growing container 50 In preference temperature and pressure condition, in source material 1 direction of arrow in the diagram distillation and sublimate be deposited on the first master meter On the P1 of face.Here, temperature conditions is preferably not less than 2100 DEG C and not higher than 2500 DEG C, and pressure condition is preferably no less than 1.3kPa and not higher than atmospheric pressure.Pressure condition can be not higher than 13kPa, further to increase growth rate.
In the present embodiment, the second first type surface P2 side of SiC kind substrate 10a is the most constrained.Therefore, SiC Planting substrate 10a can free thermal expansion during growth SiC single crystal 100.Therefore, the SiC kind substrate 10a in classical production process and The thermal stress occurred in SiC single crystal 100 is alleviated.Additionally, can be suppressed from the second first type surface by metal carbides film 11 The distillation of P2.Therefore, can produce there is the SiC boule of a small amount of crystal defect.
[deformation]
Now, the deformation of the method manufacturing SiC boule is described.Fig. 5 is to illustrate the growth SiC single crystal 100 according to deformation The schematic cross sectional views of step.As shown in Figure 5, in this deforms, SiC kind substrate 10b, SiC kind substrate 10b is used to have To connect the side surface that the conical by its shape of the first first type surface P1 and the second first type surface P2 tilts.By such as SiC boule being ground Become cylinder form, then SiC boule is cut into slices to obtain substrate, and hereafter the side surface of substrate is cut sth. askew and prepare this SiC kind substrate 10b.SiC kind substrate 10b has the metal carbides film 11 being formed on the second first type surface P2, as above-mentioned SiC kind substrate 10a is the same.
As shown in Figure 5, supporting member 51b also has the supporting part ST tilted with conical by its shape.Therefore, can be not required to In the case of particularly positioning work, support SiC kind substrate 10b by supporting member 51b, cause the process load reduced. It addition, be supported by the part of side surface that part SD is the SiC kind substrate 10b tilted with conical by its shape.It is to say, with Sample, in this case, is supported by the SiC in addition to part SD is in the region except having formed metal carbides film 11 In the region on the surface planting substrate 10b.Therefore, by with like above in the way of, can be at second first type surface of SiC kind substrate 10b In the case of P2 side is unfettered, the first first type surface P1 grows SiC single crystal 100, and is pressed down by metal carbides film 11 The back side processed distils.Therefore, can produce there is the SiC boule of a small amount of crystal defect.
<silicon carbide substrates>
SiC substrate 1000 according to the present embodiment is described.Fig. 9 is the schematic diagram of the example illustrating SiC substrate 1000.SiC Substrate 1000 is the substrate (wafer) obtained by being cut into slices by the SiC boule obtained by above-mentioned manufacture method, and can be used as The substrate of semiconductor device, because it has a small amount of crystal defect.Such as, the thickness of SiC substrate 1000 not less than 0.2mm and It is not more than 5.0mm.The flat shape of SiC substrate 1000 is such as circular, and the diameter of SiC substrate 1000 is preferably no less than 100mm, more preferably not less than 150mm.Can therefore cut down the manufacturing cost of semiconductor device.
After subjected to above-mentioned manufacture process, SiC substrate 1000 includes the metallic element (example forming metal carbides film 11 As, Ti, V and Zr).But, the concentration of element is in the range of not less than 0.01ppm and no more than 0.1ppm, and is considered Impact on the performance of semiconductor device is little.Such as, ion microprobe (SIMS) or total reflection X ray fluorescence meter can be passed through (TXRF) concentration (mass fraction) of metallic element is measured.The concentration of metallic element is preferably not more than 0.09ppm, more preferably Ground is not more than 0.08ppm particularly preferably no more than 0.07ppm.
<silicon carbide epitaxy substrate>
Silicon carbide epitaxy substrate according to the present embodiment is described.Figure 12 is to illustrate the silicon carbide epitaxy lining according to the present embodiment The schematic cross sectional views of the structure example at the end.SiC epitaxial substrate 2000 includes SiC substrate 1000 and is formed at SiC substrate 1000 On epitaxial layer 1001.
SiC substrate 1000 includes at least one in the metallic element group selecting free Ti, V and Zr to form.In SiC substrate In 1000, the concentration of metallic element is not less than 0.01ppm and no more than 0.1ppm.Epitaxial layer 1001 is in SiC substrate 1000 Epitaxially grown layer.Layer that epitaxial layer 1001 can be made up of carborundum or by the compound different from carborundum (such as, Gallium nitride (GaN)) layer made.Such as, the thickness of epitaxial layer 1001 can be not less than 5 μm or not less than 10 μm.Such as, extension The thickness of layer 1001 can be not more than 100 μm or no more than 50 μm.
As it has been described above, SiC substrate 1000 is to have the substrate of a small amount of crystal defect.Therefore, growth in SiC substrate 1000 Epitaxial layer 1001 can also be the layer with a small amount of crystal defect.
[semiconductor device]
Semiconductor device according to the present embodiment device is described.Figure 10 is to illustrate the semiconductor device according to the present embodiment The schematic cross sectional views of the example of structure.Semiconductor device shown in Figure 10 is MOSFET (metal oxide semiconductcor field effect Answer transistor).
MOSFET 3000 includes SiC epitaxial substrate 2000.MOSFET 3000 also includes oxidation film of grid 136, grid Electrode 140, interlayer dielectric 160, source electrode 141, surface protection electrode 142, drain electrode 145 and backside surface protection Electrode 147.
As it has been described above, SiC epitaxial substrate 2000 includes SiC substrate 1000 and the epitaxial layer being formed in SiC substrate 1000 1001.It is to say, MOSFET 3000 is to include at least one in the group containing the metallic element selecting free Ti, V and Zr composition SiC substrate, the concentration of metallic element be not less than 0.01ppm and no more than 0.1ppm.
In MOSFET 3000, SiC substrate 1000 is the n-type substrate with n-type conductivity (the first conduction type).Outward Prolong layer 1001 to be arranged in SiC substrate 1000.In MOSFET 3000, outside the homogeneity that epitaxial layer 1001 is made up of carborundum Prolong layer.Epitaxial layer 1001 includes such as drift region 131, body zone 132, source region 133 and contact area 134.Drift region 131 comprises all Such as the p-type impurity of nitrogen (N) and have n-type conductivity.The concentration of the p-type impurity in drift region 131 can be less than SiC substrate 1000 In the concentration of p-type impurity.Body zone 132 comprises such as aluminum (Al) or the n-type impurity of boron (B), and has p-type conductivity (being different from the second conduction type of the first conduction type).The concentration of the n-type impurity in body zone 132 can be higher than drift region 131 In the concentration of p-type impurity.
" the first conduction type " and " the second conduction type " in this specification is used only for the first conduction type and Two conduction types are distinguished from each other out.Therefore, the first conduction type can be p-type and the second conduction type can be N-shaped.
Source region 133 comprises the impurity of such as phosphorus (P), and has n-type conductivity.Source region 133 is by body zone 132 and drift Move district 131 separately.Source region 133 forms the part on the surface of epitaxial layer 1001.When from the surface being perpendicular to epitaxial layer 1001 Time from the point of view of direction, source region 133 can be by body zone 132 cincture.The concentration of the p-type impurity in source region 133 can be higher than in drift region 131 The concentration of p-type impurity.
Contact area 134 comprises the n-type impurity of such as Al, B, and has p-type conductivity.Contact area 134 forms epitaxial layer The part on the surface of 1001.Contact area 134 runs through source region 133 and extends, and contacts body zone 132.P in contact area 134 The concentration of type impurity can be higher than the concentration of the n-type impurity in body zone 132.
Oxidation film of grid 136 is formed on the surface of epitaxial layer 1001.Oxidation film of grid 136 contacts source region 133, basis Each in body district 132 and drift region 131.Such as, oxidation film of grid 136 can be made up of silicon dioxide.
Gate electrode 140 is arranged on oxidation film of grid 136.Gate electrode 140 is in the face of source region 133, body zone 132 and Each in drift region 131.Such as, gate electrode 140 can be made up of the polysilicon doped with impurity A l.
Source electrode 141 contacts source region 133 and contact area 134.Source electrode 141 can contact oxidation film of grid 136.Example As, source electrode 141 can be made up of the material including Ti, Al and Si.Source electrode 141 can Ohmic contact source region 133.Source electrode electricity Pole 141 also can Ohmic contact contact area 134.
Interlayer dielectric 160 covers gate electrode 140.Interlayer dielectric 160 contacts gate electrode 140 and gate oxide Film 136.Gate electrode 140 and source electrode 141 are electrically insulated from each other by interlayer dielectric 160.Surface protection electrode 142 cover layer Between dielectric film 160.Such as, surface protection electrode 142 can be made up of the material including Al.Surface protection electrode 142 is electrically connected to Source electrode 141.
Drain electrode 145 contacts SiC substrate 1000.Drain electrode 145 can Ohmic contact SiC substrate 1000.Drain electrode 145 and epitaxial layer 1001 facing with each other, make SiC substrate 1000 insert therebetween.Such as, drain electrode 145 can be by including NiSi's Material is made.Backside surface shield electrode 147 is electrically connected to drain electrode 145.Such as, backside surface shield electrode 147 can be by Material including Al is made.
<method manufacturing semiconductor device>
The method manufacturing semiconductor device according to the present embodiment is described.For example, manufacture described herein is above-mentioned The method of MOSFET 3000.Figure 11 is the flow chart of the overview illustrating the method manufacturing semiconductor device according to the present embodiment. The method manufacturing semiconductor device includes preparing the step (S1000) of silicon carbide substrates and processes the step of silicon carbide substrates (S2000).Have been described with preparing the step of SiC substrate, be therefore not repeated here and be described.
(processing the step of silicon carbide substrates: S2000)
After being prepared for SiC substrate, execution processes the step of SiC substrate.The step of the process SiC substrate in the present embodiment Suddenly epitaxial growth the most on sic substrates, on sic substrates formation electrode are included and by SiC substrate scribing.It is to say, The step processing SiC substrate can be to include at least one in epitaxial growth steps, electrode forming step and scribing steps Step.
As shown in Figure 12, first, such as, in SiC substrate 1000, the epitaxial layer being made up of carborundum is grown by CVD 1001.Thus produce SiC epitaxial substrate 2000.Such as, silane (SiH is used4) and propane (C3H8) as epitaxially grown source Material gas.Such as, hydrogen (H is used2) as carrier gas.Such as, during epitaxial growth, the temperature of SiC substrate 1000 can be about It is not less than 1400 DEG C and not higher than 1700 DEG C.
After epitaxial growth, perform ion implanting.Figure 13 is the schematic cross sectional views illustrating ion implanting step.Example As, by the surface of Al ion implanting epitaxial layer 1001.Therefore, in epitaxial layer 1001, formation has the body of p-type conductivity District 132.Subsequently, such as P ion is injected in body zone 132, the injection depth as shallow of the depth ratio above Al ion reached.Cause This, form the source region 133 with n-type conductivity.Additionally, such as, by Al ion implanting source region 133.Therefore, contact area is formed 134, contact area 134 runs through source region 133 and extends and arrive body zone 132, and has p-type conductivity.At epitaxial layer 1001 In, the region in addition to body zone 132, source region 133 and contact area 134 is used as drift region 131.Such as, during ion implanting The temperature of SiC epitaxial substrate 2000 can be about 300 DEG C to 600 DEG C.
After ion implantation, perform to activate annealing.Such as, SiC epitaxial substrate 2000 is at a temperature of about 1800 DEG C Stand the heat treatment of about 30 minutes.So have activated the impurity introduced by ion implanting, to generate in each area Desired carrier.
After activating annealing, form oxidation film of grid.Figure 14 is to illustrate oxidation film of grid forming step and electrode The schematic cross sectional views of forming step.Such as, oxidation film of grid is formed by thermal oxide.By including the atmosphere of oxygen Under make SiC epitaxial substrate 2000 through heat-treated to cause thermal oxide.Therefore, the gate oxidation being made up of silicon dioxide can be formed Thing film.Such as, heat treatment temperature can be about 1300 DEG C.Such as, heat treatment time can be about 60 minutes.Gate oxidation Thing film 136 is formed drift region 131, body zone 132, source region 133 and the contact area 134 contacting on the surface of epitaxial layer 1001 In each.
Then, oxidation film of grid forms gate electrode.Such as, grid electricity is formed by LPCVD (low pressure chemical vapor deposition) Pole.Such as, gate electrode 140 is by doped with impurity and show the polysilicon of conduction property and make.Gate electrode 140 is formed In each position in source region 133, body zone 132 and drift region 131.
Then, interlayer dielectric is formed.Figure 15 is to illustrate interlayer dielectric forming step and the signal of electrode forming step Property sectional view.Such as, interlayer dielectric is formed by plasma CVD.Such as, interlayer dielectric is by including silicon dioxide Material is made.Interlayer dielectric 160 is formed cover gate electrode 140 and contact oxidation film of grid 136.
Then, source electrode is formed.Before forming source electrode, part etching interlayer dielectric 160 and gate oxidation Thing film 136.Therefore, formation exposes source region 133 and the region of contact area 134 by oxidation film of grid 136.Then, at this moment Expose on the region of source region 133 and contact area 134, such as, form metal level by sputtering.Such as, metal level by include Ti, The material of Al and Si is made.Metal level such as stands the heat treatment of about 1000 DEG C, with by least some of silication of metal level. Metal level now functions as and the source electrode 141 of source region 133 Ohmic contact.
Then, surface protection electrode is formed.Such as, surface protection electrode is formed by sputtering.Such as, surface protection electricity Pole can be made up of the material including Al.As shown in Figure 10, surface protection electrode 142 is formed to contact source electrode 141 also And cover interlayer dielectric 160.
Then, drain electrode is formed.Such as, drain electrode is formed by sputtering.As shown in Figure 10, drain electrode 145 are formed at the position in the face of epitaxial layer 1001, make SiC substrate 1000 insert therebetween.Such as, drain electrode 145 can be by including The material of NiSi is made.Backside surface shield electrode 147 is further formed as contacting drain electrode 145.Such as, come by sputtering Form backside surface shield electrode.Such as, backside surface shield electrode is made up of the material including Al.
Additionally, divide SiC substrate 1000 by the saw blade specified.Therefore, partly leading as multiple chips is produced Body device.
As it has been described above, the example of the semiconductor device MOSFET being described as in this specification.But, the present embodiment Semiconductor device be not limited to MOSFET.Such as, the present embodiment can be applicable to IGBT (igbt), SBD (Xiao Te Base barrier diode), LED (light emitting diode), JFET (junction field effect transistor), IGCT, GTO (gate turn-off crystalline substance lock Pipe), PiN diode, MESFET (metal-semiconductor field effect transistor).
These semiconductor device are not limited to sic semiconductor device, as long as they include the carborundum lining of the present embodiment The end.Such as, the semiconductor device of the present embodiment can include in silicon carbide substrates by being different from the compound of carborundum (such as, GaN) epitaxial layer made.
Depend on the semiconductor device of application, device specification etc., change the conduction type of SiC substrate 1000 as one sees fit.SiC Substrate 1000 can be n-type substrate, p-substrate or SI-substrate.
In the step (S300) growing above-mentioned SiC single crystal, by by such as N2Gas, hydrogen phosphide (PH3) gas introducing In growing container 50, thus can manufacture the SiC with n-type conductivity using mixing in monocrystalline as the nitrogen of p-type impurity, phosphorus etc. Monocrystalline.By the section of this SiC single crystal is obtained n-type substrate.
Solid or gas by the n-type impurity by comprising such as Al, B introduce in growing container 50, can be using miscellaneous as p-type Al, B of matter etc. mix in monocrystalline, thus can produce the SiC single crystal with p-type conductivity.By this SiC single crystal is cut into slices Obtain p-substrate.The solid comprising n-type impurity or the example of gas include metal Al, trimethyl aluminium ((CH3)3Al) gas, Boron chloride (BCl3) gas.
It addition, by growing monocrystalline in the atmosphere of the p-type impurity and n-type impurity with minimizing, can produce semi-insulating SiC single crystal.By the section of this SiC single crystal is obtained SI-substrate.Such as, can be formed as follows there is the N-shaped of minimizing Impurity and the atmosphere of n-type impurity.It is to say, be made up and be placed on the component in stove (including growing container 50) of graphite It is initially subjected to heat treatment, halogen process etc. in advance, so that the nitrogen that includes of the component being made up of graphite, phosphorus, Al, B etc. minimize.Pass through Use the component being made up of the graphite with minimum p-type impurity and n-type impurity, and by not by p-type impurity and n-type impurity Significantly introducing and be introduced in gas, can form wherein SiC single crystal can be semi-insulated atmosphere.
Although being described above the present embodiment, it is to be understood that embodiment disclosed herein is at each aspect It is illustrative, and nonrestrictive.By the clause of claims, than the above-mentioned ones limits the scope of the present invention, and It is intended to include any modification in scope that the clause with claims is equal to and implication.
List of numerals
1 source material；10a, 10b carborundum kind substrate；11 metal carbides films；11a metal film；31 carbon substrate；32 carbon plates； 50 growing containers；51a, 51b supporting member；52 container bodies；100 single-crystal silicon carbides；131 drift regions；132 body zone；133 sources District；134 contact areas；136 oxidation film of grid；140 gate electrodes；141 source electrodes；142 surface protection electrodes；145 drain electrodes Electrode；147 backside surface shield electrodes；160 interlayer dielectrics；1000 silicon carbide substrates (substrate of semiconductor device)；1001 Epitaxial layer；2000 silicon carbide epitaxy substrates；3000MOSFET (semiconductor device)；P1 the first first type surface；P2 the second first type surface；SD It is supported by part；ST supporting part.

Claims (16)

1. the method manufacturing carborundum crystal ingot, comprises the following steps:
Preparing carborundum kind substrate, described carborundum kind substrate has the first first type surface and sets on the contrary with described first first type surface The second first type surface put；
At a temperature of not higher than 2000 DEG C, described second first type surface forms metal carbides film；And
While be formed with the described carborundum kind substrate of described metal carbides film by supporting member support overlay, pass through Distillation, grows single-crystal silicon carbide on described first first type surface,
In growth step, being supported by being partially in of the surface of the described carborundum kind substrate supported by described supporting member is removed Formed in the region outside the region of described metal carbides film.
The method of manufacture carborundum crystal ingot the most according to claim 1, wherein,
Described metal carbides film includes at least one in titanium carbide, vanadium carbide and zirconium carbide.
The method of manufacture carborundum crystal ingot the most according to claim 1 and 2, wherein,
The step forming described metal carbides film comprises the following steps:
Described second first type surface is formed metal film, and
By described metal film carbonization.
The method of manufacture carborundum crystal ingot the most according to claim 3, wherein,
The step of described metal film carbonization is comprised the following steps:
In the case of described first first type surface is prone, described carborundum kind substrate is placed in carbon substrate, and
Described metal film is being heated while described metal film supply carbon.
5. according to the method manufacturing carborundum crystal ingot described in claim 3 or 4, wherein,
The step forming metal carbides film is further comprising the steps of: after by the step of described metal film carbonization, smooth institute State metal carbides film.
6. according to the method manufacturing carborundum crystal ingot described in any one in claim 1 to 5, wherein,
In growth step,
Described carborundum kind substrate is disposed in above source material, and has distance with described source material,
Described source material faced by described first first type surface, and
The described end being supported by being partially in described first first type surface.
7. a carborundum kind substrate, including the first first type surface and the second master meter of arranging on the contrary with described first first type surface Face,
Described first first type surface is crystal growing surface,
Above described second first type surface, there is metal carbides film,
Described metal carbides film includes at least one in titanium carbide, vanadium carbide and zirconium carbide.
Carborundum kind substrate the most according to claim 7, wherein,
The film thickness of described metal carbides film is not less than 0.1 μm and no more than 1.0mm.
9. according to the carborundum kind substrate described in claim 7 or 8, wherein,
The variation coefficient of the film thickness of described metal carbides film is not more than 20%.
10. the method manufacturing carborundum crystal ingot, comprises the following steps:
Preparation is according to the carborundum kind substrate described in any one in claim 7 to 9；And supporting institute by supporting member While stating carborundum kind substrate, by distillation, described first first type surface grows single-crystal silicon carbide,
In growth step, being supported by being partially in of the surface of the described carborundum kind substrate supported by described supporting member is removed Formed in the region outside the region of described metal carbides film.
11. 1 kinds of silicon carbide substrates, described silicon carbide substrates is by by manufacture method according to claim 10 The carborundum crystal ingot obtained carries out cutting into slices and obtains,
Described substrate includes the metallic element forming described metal carbides film,
The concentration of described metallic element is not less than 0.01ppm and no more than 0.1ppm.
12. 1 kinds of semiconductor device, including silicon carbide substrates, described silicon carbide substrates includes from the gold being made up of titanium, vanadium and zirconium Belonging at least one metallic element of the group selection of element, the concentration of described metallic element is not less than 0.01ppm and is not more than 0.1ppm。
13. semiconductor device according to claim 12, wherein,
Described silicon carbide substrates is SI-substrate.
14. semiconductor device according to claim 12, wherein,
Described silicon carbide substrates is n-type substrate.
15. semiconductor device according to claim 12, wherein,
Described silicon carbide substrates is p-substrate.
16. 1 kinds of methods manufacturing semiconductor device, comprise the following steps:
Prepare silicon carbide substrates according to claim 11；And
Process described silicon carbide substrates.
CN201580020500.4A 2014-05-29 2015-05-21 Manufacture the method for carborundum crystal ingot, carborundum kind substrate, silicon carbide substrates, semiconductor device and the method for manufacture semiconductor device Pending CN106232877A (en)

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