CN106207344B - A kind of two-band distribution combining device - Google Patents
A kind of two-band distribution combining device Download PDFInfo
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- CN106207344B CN106207344B CN201610481970.7A CN201610481970A CN106207344B CN 106207344 B CN106207344 B CN 106207344B CN 201610481970 A CN201610481970 A CN 201610481970A CN 106207344 B CN106207344 B CN 106207344B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
In view of the deficiencies of the prior art, the present invention provides a kind of two-band distribution combining device, including metal cover board and metal case.1 sub-miniature A connector is respectively equipped in four walls of metal case.Micro-strip plate is equipped in metal case 9.Capacitance, microwave diode, conduction band and resistance are equipped on micro-strip plate.Capacitance, microwave diode, conduction band and resistance are linked together by conduction band.And micro-strip plate is linked together with sub-miniature A connector by conduction band.Advantages of the present invention is as follows: The present invention reduces the ports of Digital Microwave component external connection, reduce the use of radio-frequency cable in radar or communication system, can improve the reliability of Digital Microwave component.
Description
Technical field
The invention belongs to microwave components technical fields, and in particular to the design of microwave components and test fixture, microwave components
Test macro and system building, specially a kind of two-band distribution combining device.
Background technique
With advances in technology and develop, function is advanced, and the stable digital assembly of performance is gradually instead of traditional solid-state
Component.The port for reducing digital assembly external connection, improves the reliability of component, is to compel highly necessary to solve the problems, such as.Multichannel microwave
The mixed transfer technology that signal can use microwave reduces the external connection port of digital assembly, and this technology can make radar system
Or the saving high frequency cable of communication system, improve the stability of digital assembly.
The microwave signals such as clock signal, local oscillation signal, reference signal can be usually used in digital assembly design.Digital assembly
There are multiple high frequency cables for external connection port.Present two microwave signals mixed transfer technology is gradually mature, is largely used in
Among microwave components design；The application of this technology can reduce high frequency cable use, can save the processing cost of product, improve and produce
The competitiveness of product.But it is used now using common synthesizer as combiner, the combining of Lai Shixian two-band microwave signal passes
It is defeated.It has the disadvantage in that having a single function for 1. microwave frock modules, inconvenient to use.2. a liang input terminal cannot achieve microwave
The isolation of signal, the direct current signal that output input can not be isolated simultaneously.3. the use of frock module cannot take into account work frequency and forge,
Circuit cannot achieve matching, reduce the quality of microwave signal transmission.
Summary of the invention
In view of the above deficiencies, the present invention provides a kind of two-band distribution combining device, and specific structure is as follows:
A kind of two-band distribution combining device, including metal cover board 7 and metal case 9, the metal case 9 are opened for top
The rectangular block of mouth.Metal cover board 7 is assemblied in the top open part of metal case 9.1 is respectively equipped in four walls of metal case 9
Sub-miniature A connector 5.4 sub-miniature A connectors 5 are denoted as respectively: PLOPort, P1Port, P2Port, PHOPort, wherein PLOPort and PHOPort
Relatively, P1Port is located at PLOPort and PHOThe right side of port line, P2Port is located at PLOPort and PHOThe left side of port line.
Micro-strip plate is equipped in metal case 9.Capacitance 1, microwave diode 2,4 and of conduction band are equipped on micro-strip plate
Resistance 6.Specific connection relationship are as follows: by conduction band 4 by P2Port by 1 capacitance 1 respectively with 1 resistance, 6,2 microwaves
Diode 2 is connected.It will be close to P by conduction band 422 microwave diodes 2 of port respectively with PLOPort, PHOPort is connected.It is logical
Conduction band 4 is crossed by P1Port is connected with 1 resistance, 6,2 microwave diodes 2 respectively by 1 capacitance 1.It will by conduction band 4
Close to P12 microwave diodes 2 of port respectively with PLOPort, PHOPort is connected.It will be close to P by conduction band 42The electricity of port
Resistance 6 and close P1The resistance 6 of port is connected.
Furtherly, 2 capacitances 1 are equipped with, left side capacitance C is successively known as2, right side capacitance C1.Equipped with 4
A microwave diode 2 is successively known as the first microwave diode V of left side2, left side the second microwave diode V3, the first microwave of right side two
Pole pipe V1, right side the second microwave diode V4.Equipped with 2 resistance 6, successively it is known as left side resistance R2, right side resistance R1.Equipped with 9
Conduction band 4, successively referred to as the first conduction band of left side, the second conduction band of left side, left side third conduction band, the 4th conduction band of left side, right side first are led
Band, the second conduction band of right side, right side third conduction band, the 4th conduction band of right side, middle part conduction band.Specific connection relationship are as follows:
P2Left side third conduction band, left side capacitance C are successively passed through in port2, the second conduction band of left side, left side resistance R2, middle part
Conduction band, right side resistance R1, the second conduction band of right side, right side capacitance C1, right side third conduction band, with P1Port is connected.Left side
Two conduction bands respectively with left side the first microwave diode V2One end, left side the second microwave diode V3One end be connected.Left side
One microwave diode V2The other end through the first conduction band of left side and PLOPort is connected.Left side the second microwave diode V3It is another
End is through the 4th conduction band of left side and PHOPort is connected.The second conduction band of right side respectively with right side the first microwave diode V1One end,
Right side the second microwave diode V4One end be connected.Right side the first microwave diode V1The other end through the first conduction band of right side with
PLOPort is connected.Right side the second microwave diode V4The other end through the 4th conduction band of right side and PHOPort is connected.
The present invention is that the asymmetric power distribution combining microstrip circuit of two-band of strip lines configuration distribution parameter is shown in Fig. 1.This
Invention is a two-band distribution mixed transfer device, it has following two purposes: (i) realizing the conjunction of two-way alien frequencies microwave signal
Road transfer function, may be implemented PL0、PH0From port P after the combining of two-way alien frequencies signal1、P2The function of two-port output.(ii) it realizes
The distribution output function of two-way two-band microwave signal, may be implemented PL0、PH0Two-way power signal cannot be simultaneously by the present apparatus
Inputting microwave signal can be from P1、P2Two-port balanced output signal.
The present invention designs two asymmetric strip lines configurations: 2 power distributions combining microstrip circuit is shown in that Fig. 2, microstrip line are wanted
Ask as follows:
1. the length L of the first conduction band of left side, right side the first conduction band microstrip line1Be frequency be 1GHZMicrowave signal wavelength X1's
A quarter is i.e.: L1=λ1/ 4=7.25CM.
2. the length L of the 4th conduction band of left side, the 4th conduction band microstrip line of right side2Be frequency be 2.5GHZMicrowave signal wavelength X2
A quarter i.e.: L2=λ2/ 4=3CM.
3. input port PH0Two microstrip lines on the left of the first conduction band, the first conduction band of right side angle at 1200 isoceles triangle
Shape, input port PL0Two microstrip lines on the left of the 4th conduction band, the 4th conduction band of right side it is also total at lumbar triangle shape and other triangle
Side.The wavelength X of microwave signal is exactly light velocity V0With the ratio of microwave signal frequency.
Below with reference to the function and purposes of microstrip circuit schematic diagram (Fig. 1) Lai Xushu microwave device: two-band distribution combining
Transmitting device input has 2 ports, exports the impedance Z of 2 ports, microstrip circuit and port0It is all the matching of 50 ohm loads.Figure
Middle resistance R1、R2Power is absorbed in SLM Signal Label Mismatch for two output ports and microstrip line, is ensuring that a port occurs
The normal work of another port is not influenced in the case where mismatch, the resistance value of two resistance is 100 ohm.Two output ports
Isolation=10log100+100=23dB.V in figure1、V2、V3、V4Be the high-power microstrip type PIN diode of 4 silicon substrates hereafter
Abbreviation microwave diode, its main feature is that being encapsulated with micro-strip, distribution parameter is small, and performance is stablized, and can work in P-Ku100MHZ-
18GHZWave band.Its function is for microwave signal forward conduction, reverse isolation, logical high-frequency signal resistance direct current signal, so micro-
The reverse isolation degree and forward loss of wave diode are two key indexes.It can be referred to according to the technology of device in design process
Mark, using following formula, calculates the two indexs:
Formula 1:
Formula 2:
As long as the forward differential resistance Rs of microwave diode and reverse-biased is found from the technical indicator of device under normal circumstances
Capacitor Cr calculates the positive insertion loss and reverse isolation degree of microwave diode according to two formula.Microwave diode is exactly
Guarantee that this branch microstrip circuit forward direction transmits microwave signal, the alien frequencies microwave signal for blocking other microstrip circuits inversely to transmit is used to
The safety of microwave signal source is protected, under normal circumstances, the forward loss of microwave diode is less than 0.2dB, and reverse isolation is greater than
In the entire bandwidth of operation of 12dB.C in figure1、C2Two capacitances are that the capacitor of 0.1uF is isolated DC signal, lead to high-frequency microwave letter
Number.Microwave diode at work, along with detection can go out the other DC voltage of hundred millivolt levels, thus with this capacitor carry out every
From preventing DC voltage damage microwave instrument or test device.
Specific working principle are as follows: work as PL0Input L or pattern-band microwave signal P01, then port P1、P2The function of output
Rate P1=P2=0.5P01, when from port PH0Input the microwave signal P an of S-band02So port P1、P2The power of output is P1
=P2=0.5P02, both above situation is exactly the distributor of a two-band when being used alone.When two kinds of situations occur simultaneously,
Both work as PL0Input L or pattern-band microwave signal P01, port PH0Input the microwave signal P an of S-band02So port P1、
P2The power of output is P1=P2=0.5P01+0.5P02, the at this moment invention is exactly two-band combiner.The present invention uses Shi Youyi
A limitation, PL0End can only input the microwave signal of P, L-band, PH0End can only input the microwave signal of S-band.
Advantages of the present invention is as follows:
The present invention reduces the port of Digital Microwave component external connection, radio-frequency cable in radar or communication system is reduced
It uses, the reliability of Digital Microwave component can be improved.
The working principle of microstrip circuit of the invention according to Wilkinson, design two-band distribution combining device.The present invention
Two-way alien frequencies microwave signal can be realized after micro-strip is combined 2 port outputs, while the present apparatus can also be as distribution
Device uses, and the microwave signal that two kinds of frequency ranges may be implemented realizes balanced distribution, and the present invention is that a combiner is also one double
Frequency allocation device.The present invention is the combiner of a dual output port, and the efficiency of transmission of microwave signal is high, for Digital Microwave group
One standby port can be provided for part and microwave test system, greatly improve the stabilization of Digital Microwave component and test macro
Property.It is particularly suitable for field testing system building and maintenance of equipment.
Two-way exports after the combining of two-band microwave signal may be implemented in the present invention, while being also a two-band distribution
Device.The present apparatus belongs to passive device, and performance is stablized easy to use.Furthermore the present apparatus has to output and input between four ports and have
There are the isolation features of direct current signal, having prevents microwave instrument or device by the damage of direct current signal.Specifically:
The present invention can be realized, and two-way alien frequencies is realized in L (P), S-band (L-band 1-2GHz, S-band 2-4GHz) bandwidth:
It is exactly the microwave signal mixed transfer of any two-way different frequency between L (P), S frequency band.L (P), S may be implemented simultaneously
Two wave bands, realize the equilibrium assignment of microwave signal.It has the advantage that the present apparatus has distributor and two kinds of function of combiner
Can, belong to passive device and is particluarly suitable for using in experimental site and test macro.It is able to achieve Circuit Matching, makes input and output
The isolation of microwave and direct current signal is realized in port, increases the safety that microwave instrument uses.Will not deteriorate microwave signal it is spuious,
The advantages of equal telecommunications index of mutually making an uproar.Design, the test macro that the present invention can be used in digital microwave component build, test fixture
In the projects such as design.Simultaneously the present apparatus belong to passive block performance is stable, structure is simple, it is easy to carry, have wide range of applications
Feature.
Detailed description of the invention
Fig. 1 is the schematic diagram of capacitance 1 in the present invention, 6 connection relationship of microwave diode 2, conduction band 4 and resistance.
Fig. 2 is the connection schematic diagram for constituting the conduction band 4 and micro-strip plate of micro-strip plate.
Fig. 3 is the schematic diagram of metal cover board 7.
Fig. 4 is will to connect between capacitance 1, microwave diode 2, conduction band 4, sub-miniature A connector 5, resistance 6 and metal case 9
Relation schematic diagram.
Fig. 5 is metal cover board 7 and the schematic diagram that metal case 9 is assembled together.
Specific embodiment
The present invention will be further described below with reference to the drawings.
Referring to fig. 4 with 5, a kind of two-band distribution combining device, including metal cover board 7 and metal case 9, the metal
Box body 9 is open-topped rectangular block, as shown in Figure 3.Referring to Fig. 3 and 5, the top that metal cover board 7 is assemblied in metal case 9 is opened
At mouthful, as shown in Figure 5.Referring to fig. 4,1 sub-miniature A connector 5 is respectively equipped in four walls of metal case 9.Referring to Fig. 1,4 SMA are connect
First 5 are denoted as respectively: PLOPort, P1Port, P2Port, PHOPort, wherein PLOPort and PHOPort is opposite, P1Port is located at PLO
Port and PHOThe right side of port line, P2Port is located at PLOPort and PHOThe left side of port line.
Referring to fig. 4, micro-strip plate is equipped in metal case 9.The micro-strip plate is rectangular slab.Blocking is equipped on micro-strip plate
Capacitor 1, microwave diode 2, conduction band 4 and resistance 6.Referring to Fig. 1,2 and 4, specific connection relationship are as follows:
By conduction band 4 by P2Port is connected with 1 resistance, 6,2 microwave diodes 2 respectively by 1 capacitance 1.
It will be close to P by conduction band 422 microwave diodes 2 of port respectively with PLOPort, PHOPort is connected.
By conduction band 4 by P1Port is connected with 1 resistance, 6,2 microwave diodes 2 respectively by 1 capacitance 1.
It will be close to P by conduction band 412 microwave diodes 2 of port respectively with PLOPort, PHOPort is connected.
It will be close to P by conduction band 42The resistance 6 of port and close P1The resistance 6 of port is connected.
Referring to Fig. 1 and 4, furtherly, 2 capacitances 1 are equipped with, are successively known as left side capacitance C2, right side blocking
Capacitor C1.
Equipped with 4 microwave diodes 2, successively it is known as the first microwave diode V of left side2, left side the second microwave diode V3、
Right side the first microwave diode V1, right side the second microwave diode V4。
Equipped with 2 resistance 6, successively it is known as left side resistance R2, right side resistance R1。
Equipped with 9 conduction bands 4, successively it is known as left side the first conduction band, the second conduction band of left side, left side third conduction band, left side the 4th
Conduction band, the first conduction band of right side, the second conduction band of right side, right side third conduction band, the 4th conduction band of right side, middle part conduction band, such as Fig. 1,2 and 4
It is shown.Specific connection relationship are as follows:
P2Left side third conduction band, left side capacitance C are successively passed through in port2, the second conduction band of left side, left side resistance R2, middle part
Conduction band, right side resistance R1, the second conduction band of right side, right side capacitance C1, right side third conduction band, with P1Port is connected.
The second conduction band of left side respectively with left side the first microwave diode V2One end, left side the second microwave diode V3One
End is connected.Left side the first microwave diode V2The other end through the first conduction band of left side and PLOPort is connected.Left side second is micro-
Wave diode V3The other end through the 4th conduction band of left side and PHOPort is connected.
The second conduction band of right side respectively with right side the first microwave diode V1One end, right side the second microwave diode V4One
End is connected.Right side the first microwave diode V1The other end through the first conduction band of right side and PLOPort is connected.Right side second is micro-
Wave diode V4The other end through the 4th conduction band of right side and PHOPort is connected.
Referring to Fig. 1,2 and 4, furtherly, PLOPort and PHOPort is conllinear.P1Port and P2Port is conllinear.P1Port and P2
Line and P between portLOPort and PHOLine between port is mutually perpendicular to.
Furtherly, PLOPort and PHOLine and P between port1Port and P2The middle separated time of line is mutually overlapped between port
It closes.
Referring to Fig. 1,2 and 4, furtherly, left side capacitance C2, left side the first microwave diode V2, the second microwave of left side
Diode V3, the first conduction band of left side, the second conduction band of left side, left side third conduction band, the 4th conduction band of left side, left side resistance R2, with right side
Capacitance C1, right side the first microwave diode V1, right side the second microwave diode V4, the first conduction band of right side, right side second lead
Band, right side third conduction band, the 4th conduction band of right side, right side resistance R1, relative to PLOPort and PHOLine between port is symmetrical.
Referring to Fig. 1,2 and 4, furtherly, left side third conduction band, left side capacitance C2, the second conduction band of left side, left side electricity
Hinder R2, middle part conduction band, right side resistance R1, the second conduction band of right side, right side capacitance C1, right side third conduction band be installed in P1End
Mouth and P2On line between port.
Referring to Fig. 1,2 and 4, furtherly, the first conduction band of left side, the second conduction band of left side, left side third conduction band, left side the 4th
Conduction band, the first conduction band of right side, the second conduction band of right side, right side third conduction band, the 4th conduction band of right side, middle part conduction band are straight line.
Furtherly, capacitance 1 is 50V-0.1uF.Microwave diode 2 is responsible for microwave signal forward conduction, reversely
Cut-off.The bandwidth of operation of microwave diode 2 is less than not less than P-S wave band, reverse isolation degree not less than 12dB, insertion loss
0.2dB.Resistance 6 is the microwave power resistance of 100 Ω or more.Pulling-out force between conduction band and micro-strip plate is not less than 15N.
Furtherly, the model 0805 of capacitance 1.The model of resistance 6 is 81-7008TC-100-5.Conduction band with
Binding force between micro-strip plate is not less than the binding force for being grounded copper foil and micro-strip plate, and the standing wave of conduction band is less than 1.2.
Furtherly, micro-strip plate is fixed in metal case 9 by screw group 3, as shown in Figure 3.Pass through sunk screw 8
Metal case 9 and metal cover board 7 are linked together, as shown in Figure 5.
Furtherly, micro-strip plate is designed two asymmetric double frequency ranges by the present invention, strip lines configuration: the combining of 2 power distributions
Microstrip circuit is shown in figure one.2 100 Ohmic resistance R1、R2.17 M2.5*8 stainless steel cheese head screws, 17 stainless steel bombs of M2.5
Pad, 17 M2.5 stainless steel plain cushions.4 microwave diodes, the present invention in microwave diode to backward power input have very
Good buffer action, compared the microwave diode of other producers, two pole of 2K626 microwave for having selected Chengdu matt factory to produce
There is bandwidth can achieve P-Ku, 14dB can be reached by reverse isolation in formula computational theory, insert for pipe, the microwave diode
Enter loss and there was only 0.16dB, can satisfy requirement.2 are 50V-0.1uF capacitance C having a size of 0805 index1、C2, the capacitor
It is that the hundred millivolts of superfine DC voltages generated when microwave diode work are isolated.
Use principle of the invention: when the present invention is used as combiner: the P of portL0The microwave signal of end input P or L-band
P01, there is 0.5P01Power passes through microwave diode V1V4Microwave diode is reversely to end, and is equivalent to open circuit for the microwave signal
From port P1It exports, in addition 0.5P01Power passes through microwave diode V2V3Microwave diode is reversely to end, which is believed
Open circuit number is equivalent to from port P2Output.Port PH0S-band microwave signal is inputted, working principle is identical to port PL0, herein
Not repeated description, then P1、P2The output power theoretical value of port are as follows: P1=P2=0.5P01+P02.The present invention is used as distributor
Port PL0The microwave signal P of end input P or L-band01Or port PH0Input the microwave signal P of S-band02, then P1、P2Port
Output power theoretical value are as follows: P1=P2=0.5P01Or P1=P2=0.5P02Annotation: port P when being used as distributorL0, port PH0
Cannot work at the same time, actually when circuit and microwave device can have a small amount of loss, the insertion loss of the present apparatus is less than
0.3dB.By the test input mouth P in useL0、PH0For high-frequency signal, there are 14dB isolations, this index is better than design
Index.Output end P1、P2For high-frequency signal, there are the isolations of 23dB.The two indexs are to prevent the microwave signal of opposite direction
Damage to microwave instrument.All with the isolation features of direct current signal between four ports of the invention, when a port seals in directly
It can not be transferred to the other three port when flowing signal, microwave device or instrument is effectively protected from direct current signal in this function
Damage.
Claims (9)
1. a kind of two-band distribution combining device, including metal cover board (7) and metal case (9), it is characterised in that: in can
Four walls of body (9) are respectively equipped with 1 sub-miniature A connector (5)；4 sub-miniature A connectors (5) are denoted as respectively: PLOPort, P1Port, P2Port,
PHOPort, wherein PLOPort and PHOPort is opposite, P1Port is located at PLOPort and PHOThe right side of port line, P2Port is located at
PLOPort and PHOThe left side of port line；
Micro-strip plate is equipped in metal case (9)；Capacitance (1), microwave diode (2), conduction band are equipped on micro-strip plate
(4) and resistance (6)；Wherein:
Equipped with 2 capacitances (1), successively it is known as left side capacitance C2, right side capacitance C1；
Equipped with 4 microwave diodes (2), successively it is known as the first microwave diode V of left side2, left side the second microwave diode V3, it is right
Side the first microwave diode V1, right side the second microwave diode V4；
Equipped with 2 resistance (6), successively it is known as left side resistance R2, right side resistance R1；
Equipped with 9 conduction bands (4), successively referred to as the first conduction band of left side, the second conduction band of left side, left side third conduction band, left side the 4th are led
Band, the first conduction band of right side, the second conduction band of right side, right side third conduction band, the 4th conduction band of right side, middle part conduction band；
Specific connection relationship are as follows:
By conduction band (4) by P2Port by 1 capacitance (1) respectively with 1 resistance (6), 2 microwave diode (2) phases
Even；
It will be close to P by conduction band (4)22 microwave diodes (2) of port respectively with PLOPort, PHOPort is connected；
By conduction band (4) by P1Port by 1 capacitance (1) respectively with 1 resistance (6), 2 microwave diode (2) phases
Even；
It will be close to P by conduction band (4)12 microwave diodes (2) of port respectively with PLOPort, PHOPort is connected；
It will be close to P by conduction band (4)2The resistance (6) of port and close P1The resistance (6) of port is connected；
Wherein, further specific connection relationship is as follows:
P2Left side third conduction band, left side capacitance C are successively passed through in port2, the second conduction band of left side, left side resistance R2, middle part leads
Band, right side resistance R1, the second conduction band of right side, right side capacitance C1, right side third conduction band, with P1Port is connected；
The second conduction band of left side respectively with left side the first microwave diode V2One end, left side the second microwave diode V3One end phase
Connection；Left side the first microwave diode V2The other end through the first conduction band of left side and PLOPort is connected；The second microwave of left side two
Pole pipe V3The other end through the 4th conduction band of left side and PHOPort is connected；
The second conduction band of right side respectively with one end of right side the first microwave diode V1, right side the second microwave diode V4One end phase
Connection；The other end of right side the first microwave diode V1 is through the first conduction band of right side and PLOPort is connected；The second microwave of right side two
Pole pipe V4The other end through the 4th conduction band of right side and PHOPort is connected.
2. a kind of two-band distribution combining device according to claim 1, it is characterised in that: PLOPort and PHOPort is total
Line；P1Port and P2Port is conllinear；P1Port and P2Line and P between portLOPort and PHOLine between port mutually hangs down
Directly.
3. a kind of two-band distribution combining device according to claim 1, it is characterised in that: PLOPort and PHOBetween port
Line and P1Port and P2The middle separated time of line coincides between port.
4. a kind of two-band distribution combining device according to claim 1, it is characterised in that: left side capacitance C2, left side
First microwave diode V2, left side the second microwave diode V3, the first conduction band of left side, the second conduction band of left side, left side third conduction band,
The 4th conduction band of left side, left side resistance R2, with right side capacitance C1, right side the first microwave diode V1, two pole of the second microwave of right side
Pipe V4, the first conduction band of right side, the second conduction band of right side, right side third conduction band, the 4th conduction band of right side, right side resistance R1, relative to PLO
Port and PHOLine between port is symmetrical.
5. a kind of two-band distribution combining device according to claim 1, it is characterised in that: left side third conduction band, left side
Capacitance C2, the second conduction band of left side, left side resistance R2, middle part conduction band, right side resistance R1, the second conduction band of right side, right side blocking electricity
Hold C1, right side third conduction band be installed in P1Port and P2On line between port.
6. a kind of two-band distribution combining device according to claim 1, it is characterised in that: the first conduction band of left side, left side
Second conduction band, left side third conduction band, the 4th conduction band of left side, the first conduction band of right side, the second conduction band of right side, right side third conduction band, the right side
The 4th conduction band of side, middle part conduction band are straight line.
7. a kind of two-band distribution combining device according to claim 2, it is characterised in that: capacitance (1) is 50V-
0.1uF；Microwave diode (2) is responsible for microwave signal forward conduction, reversed cut-off；The bandwidth of operation of microwave diode (2) is not
It is less than 0.2dB not less than 12dB, insertion loss less than P-S wave band, reverse isolation degree；Resistance (6) is the microwave function of 100 Ω or more
Rate resistance；Pulling-out force between conduction band and micro-strip plate is not less than 15N.
8. a kind of two-band distribution combining device according to claim 2, it is characterised in that: the model of capacitance (1)
It is 0805；The model of resistance (6) is 81-7008TC-100-5；Binding force between conduction band and micro-strip plate is not less than grounding copper
The binding force of foil and micro-strip plate, and the standing wave of conduction band is less than 1.2.
9. a kind of two-band distribution combining device according to claim 2, it is characterised in that: will be micro- by screw group (3)
Band plate is fixed in metal case (9)；Metal case (9) and metal cover board (7) are linked together by sunk screw (8).
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| CN201610481970.7A CN106207344B (en) | 2016-06-24 | 2016-06-24 | A kind of two-band distribution combining device |
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| CN106207344B true CN106207344B (en) | 2019-03-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202662766U (en) * | 2012-04-26 | 2013-01-09 | 安徽科瑞达通信科技有限公司 | Novel high-isolation low-intermodulation co-frequent combiner |
| CN202797636U (en) * | 2012-08-12 | 2013-03-13 | 江苏旭源科技有限公司 | Photovoltaic direct current power distribution cabinet adopting Boost circuits |
| CN104852109A (en) * | 2015-04-21 | 2015-08-19 | 中国电子科技集团公司第三十八研究所 | Double-circuit different-frequency signal combining output device and micro-strip board |
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| WO2010145825A1 (en) * | 2009-06-18 | 2010-12-23 | Fractus, S.A. | Wireless device providing operability for broadcast standards and method enabling such operability |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202662766U (en) * | 2012-04-26 | 2013-01-09 | 安徽科瑞达通信科技有限公司 | Novel high-isolation low-intermodulation co-frequent combiner |
| CN202797636U (en) * | 2012-08-12 | 2013-03-13 | 江苏旭源科技有限公司 | Photovoltaic direct current power distribution cabinet adopting Boost circuits |
| CN104852109A (en) * | 2015-04-21 | 2015-08-19 | 中国电子科技集团公司第三十八研究所 | Double-circuit different-frequency signal combining output device and micro-strip board |
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