CN106206979A - Electroluminescent device, the display device with it and illuminator - Google Patents
Electroluminescent device, the display device with it and illuminator Download PDFInfo
- Publication number
- CN106206979A CN106206979A CN201610528821.1A CN201610528821A CN106206979A CN 106206979 A CN106206979 A CN 106206979A CN 201610528821 A CN201610528821 A CN 201610528821A CN 106206979 A CN106206979 A CN 106206979A
- Authority
- CN
- China
- Prior art keywords
- electroluminescent device
- oxide
- scattering particles
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
This application provides a kind of electroluminescent device, the display device with it and illuminator.This electroluminescent device includes the first electrode, luminescent layer, the second electrode and at least one film layer, and wherein, luminescent layer is arranged on the surface of the first electrode；Second electrode is arranged on the surface away from the first electrode of luminescent layer, each film layer is arranged between the first electrode and luminescent layer, and/or be arranged between the second electrode and luminescent layer, wherein, at least one film layer includes main body and the scattering particles being dispersed in main body, and scattering particles include core and shell, shell parcel is arranged on outside core, the material forming core is metal, and the material forming shell is inorganic semiconductor material, and main body has electric conductivity.The light emission rate of this electroluminescent device is higher.
Description
Technical field
The application relates to photoelectric device technical field, in particular to a kind of electroluminescent device, the display with it
Device and illuminator.
Background technology
External quantum efficiency (external quantum efficiency, be called for short EQE) be characterized in observed direction electroluminescent
Ratio between number of photons and the electron number of injection device that luminescent device sends, is to evaluate the most important index of device performance.
EQE=γ χ ηPLηOC, wherein, γ refers to that injecting electronics occurs compound ratio with hole；χ refers to that exciton produces after occurring to be combined
The ratio of radiation transistion；ηPLRefer to the fluorescence quantum yield of luminescent material；ηOCBeing the light emission rate launching photon, above four are
Several impacts on EQE are equivalent.
Electroluminescent device in working order under, from respective electrode emission go out electronics and hole, electronics and hole send out
Being combined in photosphere, in electroluminescent device, in luminescent layer, the generation light more than 70% can lose, and only the light of relatively small amount can
Occur through transparency electrode as " can use " light.Electroluminescent device typically different materials stacking forms, and light reflects from height
Rate layer is when low-index layer is injected, and device inside has parallel Rotating fields so that major part incident illumination is because total reflection is damaged
Lose, greatly reduce the light emission rate of device.
In prior art, often scattering particles less for particle diameter being arranged in functional layer, lambda1-wavelength is more than scattering grain
The particle diameter of son, incident illumination scatters through scattering particles, and owing to the distribution of scattering particles is random, therefore light passes through
The direction of propagation after scattering particles is also immediately, and then decreases the probability of total reflection, adds going out of electroluminescent device
Light rate.
At present, scattering particles have two kinds, are metal oxide particle and metallic particles respectively.For metallic particles,
The particle diameter of tens nanometers just just has preferable dispersion effect to light, but, its bad dispersibility, easily assemble, most of light
Can not get owing to not reaching scattering particles scattering and stranded in the devices, affect light emission rate.Metal oxide particle is at electricity
In the functional layer of electroluminescence device, particle diameter 200～300nm is at least needed just to have preferable dispersion effect, although electroluminescent device
The thickness of functional layer can be made the thickest, but luminescent properties can be made to decline more than 200nm, so functional layer thickness is general
Less than 200nm, more preferably, less than 100nm, the scattering particles adding big particle diameter in this case can cause the short circuit of device.
Summary of the invention
The application aims to provide a kind of electroluminescent device, the display device with it and illuminator, existing to solve
In technology, the particle diameter of scattering particles is compared with easily causing greatly the problem of short circuit or easily assembling the problem that light emission rate is low.
To achieve these goals, according to an aspect of the application, it is provided that a kind of electroluminescent device, this electroluminescent
Optical device includes the first electrode, luminescent layer, the second electrode and at least one film layer, and wherein, luminescent layer is arranged on above-mentioned first electricity
On the surface of pole；Second electrode is arranged on the surface away from above-mentioned first electrode of above-mentioned luminescent layer, and each film layer is arranged on
State between the first electrode and above-mentioned luminescent layer, and/or be arranged between above-mentioned second electrode and above-mentioned luminescent layer, wherein, at least
One above-mentioned film layer includes main body and the scattering particles being dispersed in aforementioned body, and above-mentioned scattering particles include core and shell, above-mentioned
Shell parcel is arranged on outside above-mentioned core, and the material forming above-mentioned core is metal, and the material forming above-mentioned shell is inorganic semiconductor material
Material, aforementioned body has electric conductivity.
Further, above-mentioned metal is noble metal or copper, and above-mentioned noble metal is silver, gold and one or more in platinum.
Further, above-mentioned inorganic semiconductor material is silicon, titanium oxide, tantalum oxide, niobium oxide, zirconium oxide, aluminium oxide, oxygen
Change tungsten, stibium oxide, vanadium oxide, molybdenum oxide, chromium oxide, ferrum oxide, copper oxide, lead oxide, yittrium oxide, manganese oxide, stannum oxide, oxygen
Change zinc, vulcanized lead, zinc sulfide, cadmium sulfide, zinc telluridse and one or more in cadmium selenide.
Further, the mean diameter of above-mentioned core between 2～30nm, the mean diameter of above-mentioned scattering particles 14～
Between 150nm.
Further, above-mentioned scattering particles are spherical particles or spheroid granule.
Further, the volume of above-mentioned scattering particles account for above-mentioned film layer volume 0.1～50%.
Further, above-mentioned electroluminescent device uses thin-film package, and the thickness of above-mentioned thin film is less than or equal to 20 μm, excellent
Choosing is less than or equal to 2 μm.
Further, above-mentioned electroluminescent device is quanta point electroluminescent device, and above-mentioned luminescent layer is quantum dot light emitting
Layer.
To achieve these goals, according to further aspect of the application, it is provided that a kind of display device, this display device
Including electroluminescent device, this electroluminescent device is above-mentioned electroluminescent device.
To achieve these goals, according to another aspect of the application, it is provided that a kind of illuminator, this illuminator
Including electroluminescent device, this electroluminescent device is above-mentioned electroluminescent device.
The technical scheme of application the application, at least one the film layer in the electroluminescent device of the application includes scattering
Grain, scattering particles include having core and shell, and wherein, core uses metal to be formed, and shell is wrapped in the outside of core, and shell is inorganic matter half
Conductor, so uses shell multiple metal core to be kept apart, it is to avoid the gathering of metal scattering particles of the prior art, makes
Obtain scattering particles and light is had preferable dispersion effect, improve the light emission rate of electroluminescent device；Further, these scattering particles only need
Particle diameter that will be less just can reach preferable dispersion effect, it is to avoid use the scattering particles of big particle diameter to cause in prior art
The short circuit problem of device.
Accompanying drawing explanation
The Figure of description of the part constituting the application is used for providing further understanding of the present application, and the application shows
Meaning property embodiment and explanation thereof are used for explaining the application, are not intended that the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation of the electroluminescent device that a kind of exemplary embodiment of the application proposes；
Fig. 2 shows a kind of structural representation executing the scattering particles that example provides of the application；And
Fig. 3 shows the structural representation of the electroluminescent device that a kind of embodiment of the application provides.
Wherein, above-mentioned accompanying drawing includes the following drawings labelling:
01, scattering particles；011, core；012, shell；10, the first electrode；20, the first film layer；30, luminescent layer；40, the second film
Layer；50, the second electrode.
Detailed description of the invention
It it is noted that described further below is all exemplary, it is intended to provide further instruction to the application.Unless it is another
Indicating, all technology used herein and scientific terminology have usual with the application person of an ordinary skill in the technical field
The identical meanings understood.
It should be noted that term used herein above merely to describe detailed description of the invention, and be not intended to restricted root
Illustrative embodiments according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when using term " to comprise " in this manual and/or " bag
Include " time, it indicates existing characteristics, step, operation, device, assembly and/or combinations thereof.
As background technology is introduced, the light emission rate in quanta point electroluminescent device of the prior art is relatively low, for
Solution technical problem described above, present applicant proposes a kind of electroluminescent device, the display device with it and illumination dress
Put.
In a kind of typical embodiment of the application, it is proposed that a kind of electroluminescent device, as it is shown in figure 1, this electroluminescent
Optical device includes: the first electrode, luminescent layer, the second electrode and at least one film layer, and wherein, luminescent layer is arranged on above-mentioned first electricity
On the surface of pole；Second electrode is arranged on the surface away from above-mentioned luminescent layer of above-mentioned scattering layer；Above-mentioned film layer is arranged on
State between the first electrode and above-mentioned luminescent layer, and/or be arranged between above-mentioned second electrode and above-mentioned luminescent layer, wherein, at least
One above-mentioned film layer includes main body and scattering particles 01, as in figure 2 it is shown, above-mentioned scattering particles 01 include core 011 and shell 012, on
Stating shell 012 parcel and be arranged on above-mentioned core 011 outside, the material forming above-mentioned core 011 is metal, forms the material of above-mentioned shell 012
For inorganic semiconductor material, aforementioned body has electric conductivity.
As it is shown in figure 1, the film layer being arranged between the first electrode 10 and luminescent layer 30, the referred to as first film layer 20, such as Fig. 3 institute
Show, be arranged on the film layer between the second electrode 50 and luminescent layer 30, the referred to as second film layer 40, an electroluminescent device luminous organ
Part can include multiple first film layer and multiple second film layers simultaneously.The application includes the film of main body and scattering particles simultaneously
Layer can be the first film layer, it is also possible to be the second film layer.As it is shown in figure 1, this film layer is the first film layer 20；Such as Fig. 3, this film layer is
Second film layer 40.The film layer of scattering particles and main body can be as electron transfer layer, electron injecting layer, hole transmission layer and hole
In implanted layer one layer or multilamellar, the material of main body is selected from corresponding electron transport material, electron injection material, hole barrier
Material, hole mobile material, hole-injecting material and electron-blocking materials.
At least one film layer in the electroluminescent device of the application include scattering particles, scattering particles include having core with
Shell, wherein, core uses metal to be formed, and shell is wrapped in the outside of core, and shell is inorganic semiconductor material, so uses shell by multiple
Metal core keep apart, it is to avoid the gathering of metal scattering particles of the prior art so that light is had preferably by scattering particles
Dispersion effect, improve the light emission rate of electroluminescent device；Further, these scattering particles have only to less particle diameter and just can reach
To preferable dispersion effect, it is to avoid prior art uses the scattering particles of big particle diameter to cause the short circuit problem of device.
Include that the film layer of scattering particles and main body can be as electron transfer layer, electron injecting layer, hole transmission layer simultaneously
With a layer in hole injection layer or multilamellar.
It is known to those skilled in the art that at least an electrode is transparency electrode in the first electrode and the second electrode, this
Skilled person can select suitable first electrode and the material of the second electrode according to practical situation.
The material of the first electrode is indium tin oxide, indium-zinc oxide, stannum oxide, aluminum zinc oxide, strontium vanadate, calcium vanadate
Or cadmium tin-oxide.Similarly, those skilled in the art can select suitable material according to practical situation.
The material of the most above-mentioned second electrode of the application is Ag, Au and/or Al, say, that the material of the second electrode is permissible
For Ag, Au or Al；Can also be the alloy of the alloy of Ag Yu Au, Au Yu Al, the alloy of Ag Yu Al, it is also possible to be Ag, Au and Al
Alloy, it is also possible to be the alloy of Ag, the alloy of Au or the alloy of Al.Those skilled in the art can select according to practical situation
The material of suitable first electrode.
In a kind of embodiment of the application, above-mentioned metal is noble metal or copper, and above-mentioned noble metal is silver, gold and in platinum
Plant or multiple.
In the another kind of embodiment of the application, above-mentioned inorganic matter semi-conducting material be silicon, titanium oxide, tantalum oxide, niobium oxide,
Zirconium oxide, aluminium oxide, tungsten oxide, stibium oxide, vanadium oxide, molybdenum oxide, chromium oxide, ferrum oxide, copper oxide, lead oxide, yittrium oxide,
Manganese oxide, stannum oxide, zinc oxide, vulcanized lead, zinc sulfide, cadmium sulfide, zinc telluridse and one or more in cadmium selenide.
So that scattering particles can reduce the particle diameter of scattering particles, the application while being preferably scattered light
The mean diameter of the most above-mentioned core is between 2～30nm, and the mean diameter of above-mentioned scattering particles is between 14～150nm.
In a kind of embodiment of the application, above-mentioned scattering particles are spherical particles or spheroid granule.Such shape energy
Enough be further ensured that the roughness on the surface of film layer is less, avoid further the electric leakage that causes more greatly due to its surface roughness or
Short circuit problem.
The volume content that the volume of scattering particles accounts for film layer is the biggest, and scattering process is the biggest, and light extraction effect is the best.But dissipate
While penetrating granule content increase, film surface roughness can become big, can increase the risk of electric leakage, and, scattering particles can be inhaled
Receive a part of light, the brightness of device can be substantially reduced when the content of scattering particles is the biggest.So, in order to avoid scattering particles mistake
Cause particles aggregate more or make film surface produce projection to pierce through being greatly reduced of its structure sheaf and device brightness, and then leading
Sending a telegraph electroluminescence device and produce electric leakage or short circuit problem, and ensure that device has preferable light extraction effect simultaneously, the application is excellent
The volume selecting scattering particles accounts for the 0.1%～50% of the volume of film layer, and the volume of the scattering particles in the application refers to all points
The volume summation of all of scattering particles being dispersed in a film layer.
In order to preferably protect electroluminescent device, it is ensured that its performance, the preferred electroluminescent device of the application uses thin
Film encapsulates, and the thickness of thin film is less than or equal to 20 μm, preferably lower than or equal to 2 μm.Thin-film package is the outer layer to luminescent device
Arranging the laminated film being in contact with it, thin-film package can be chemical gaseous phase deposition or vacuum evaporation inorganic barrier layer and gather
The Barix structure (using the encapsulating structure that polymeric layer and inorganic barrier layer are staggeredly stacked to form) that compound thin film is formed, prevents
Water Oxygen permeation, and film layer is smooth.In order to adapt to the modern society's lightening demand to electronic equipment, and thickness gets over Bao Yuehao.
And thin-film package is less causes light loss.
Above-mentioned electroluminescent device can be organic electroluminescence device, it is also possible to be quanta point electroluminescent device, this
In a kind of embodiment of application, above-mentioned electroluminescent device is quanta point electroluminescent device, and luminescent layer is quantum dot light emitting layer.
Quantum dot light emitting layer in the application include quanta point material, above-mentioned quanta point material be red quantum point material,
One or more in green quanta point material and blue quanta point material.Those skilled in the art can select according to practical situation
Select suitable quanta point material.
Preferably, above-mentioned quanta point material includes the part of quantum dot and the coordination of above-mentioned quantum dot surface, and above-mentioned part is
Sulfydryl class part, phosphate radical class part, amido class part or carboxylate radical class part.Part is stably coordinated with quantum dot surface, carries
The stability of high quantum dot.
In a kind of embodiment in the application, above-mentioned electroluminescent device also includes the function without scattering particles
Layer, this functional layer is referred to as net work ergosphere, and net work ergosphere is arranged between the first electrode and luminescent layer and/or is arranged on the second electrode
And between luminescent layer.This net work ergosphere can be in electron transfer layer, electron injecting layer, hole transmission layer and hole injection layer
One layer or multilamellar.
In the another embodiment of the application, above-mentioned electroluminescent device also includes that substrate, above-mentioned substrate are arranged on above-mentioned
First electrode is away from the surface of above-mentioned luminescent layer, or above-mentioned substrate is arranged on the table away from above-mentioned film layer of above-mentioned second electrode
Face, when the first electrode is anode, substrate is arranged with the first electrode contact, when the second electrode is anode, substrate and the second electricity
Pole contact is arranged.Additionally, it is well known by those skilled in the art that in the first electrode and the second electrode, at least an electrode is
Transparency electrode, when anode is transparency electrode, substrate also must be transparent.
In the another kind of typical embodiment of the application, it is provided that a kind of display device, this display device includes electroluminescent
Luminescent device, this electroluminescent device is above-mentioned electroluminescent device.
Owing to this display device includes above-mentioned electroluminescent device so that its luminance is higher, and then makes outside it
Quantum efficiency is higher.
In the typical embodiment of another of the application, it is provided that a kind of illuminator, this illuminator includes, this electricity
Electroluminescence device is above-mentioned electroluminescent device.
Owing to having above-mentioned electroluminescent device in this luminaire, its luminance is higher, and then makes its outer quantum
Efficiency is higher.
So that those skilled in the art can clearly understand the technical scheme of the application, below with reference to tool
The embodiment of body and comparative example explain the technical scheme of the application.
Embodiment 1
Quanta point electroluminescent device include the first electrode, two the first film layers, quantum dot light emitting layer, the second film layer,
Two electrodes.Wherein, the first electrode is ito anode, and wherein, a first film layer is poly-(3,4-rthylene dioxythiophene)-polyphenyl second
The hole injection layer that alkene sulfonic acid (PEDOT:PSS) is formed, is arranged on the surface of the first electrode, and another the first film layer is hole
Transport layer, is arranged on the surface away from the first electrode of hole injection layer, and including main body and scattering particles, main body is polyethylene
Carbazole (PVK), scattering particles are spherical.Third membrane layer is ZnO electric transmission/implanted layer, and the material of the second electrode is Ag.
The core of scattering particles is silver, and its mean diameter is 2nm；The shell of scattering particles is titanium oxide, and scattering particles is flat
All particle diameters are 14nm；The volume of scattering particles accounts for the 50% of film layer volume content.Quantum dot light emitting layer includes quanta point material, amount
Son point material is the red quantum point of 635nm.
Embodiment 2
Difference with embodiment 1 is: the volume of scattering particles accounts for the 20% of film layer volume content.
Embodiment 3
Difference with embodiment 1 is: the volume of scattering particles accounts for the 10% of film layer volume content.
Embodiment 4
Difference with embodiment 1 is: the volume of scattering particles accounts for the 1% of film layer volume content.
Embodiment 5
Difference with embodiment 1 is: the core of scattering particles is silver, and its mean diameter is 10nm；Scattering particles average
Particle diameter is 40nm.
Embodiment 6
Difference with embodiment 5 is: the volume of scattering particles accounts for the 20% of film layer volume content.
Embodiment 7
Difference with embodiment 5 is: the volume of scattering particles accounts for the 10% of film layer volume content.
Embodiment 8
Difference with embodiment 5 is: the volume of scattering particles accounts for the 1% of film layer volume content.
Embodiment 9
Difference with embodiment 1 is: the core of scattering particles is silver, and its mean diameter is 30nm；Scattering particles average
Particle diameter is 70nm, and the volume of scattering particles accounts for the 20% of film layer volume content.
Embodiment 10
Difference with embodiment 9 is: the volume of scattering particles accounts for the 10% of film layer volume content.
Embodiment 11
Difference with embodiment 9 is: the volume of scattering particles accounts for the 1% of film layer volume content.
Embodiment 12
Difference with embodiment 9 is: the volume of scattering particles accounts for the 0.1% of film layer volume content.
Embodiment 13
Difference with embodiment 1 is: the core of scattering particles is silver, and its mean diameter is 30nm；Scattering particles average
Particle diameter is 150nm, and the volume of scattering particles accounts for the 10% of film layer volume content.
Embodiment 14
Difference with embodiment 13 is: the volume of scattering particles accounts for the 1% of film layer volume content.
Embodiment 15
Difference with embodiment 13 is: the volume of scattering particles accounts for the 0.1% of film layer volume content.
Embodiment 16
Difference with embodiment 13 is: the mean diameter of the core of scattering particles is 50nm.
Embodiment 17
Difference with embodiment 13 is: the core of scattering particles is silver, and its mean diameter is 30nm, scattering particles average particle
Footpath is 170nm.
Embodiment 18
Difference with embodiment 13 is: the volume of scattering particles accounts for the 60% of film layer volume content.
Comparative example 1
Difference with embodiment 1 is: the scattering particles in the second film layer are Argent grain, and the mean diameter of Argent grain is
50nm。
Comparative example 2
Difference with embodiment 1 is: the scattering particles in the second film layer are titan oxide particles, titan oxide particles average
Particle diameter is 50nm.
Comparative example 3
Difference with embodiment 1 is: do not comprise scattering particles in the second film layer.
PR670 spectral luminosity/colourity/radiancy the meter using PHOTO RESEARCH company to produce, in electric current density be
2mA/cm2Under conditions of, external quantum efficiency (EQE) the outer quantum of the electroluminescent device of test the various embodiments described above and comparative example
Efficiency is the biggest, and luminance is the highest, and test result is shown in Table 1.
Table 1
From the data of table 1, when the mean diameter of core is between 2～30nm, the mean diameter of scattering particles 14～
Between 150nm, and the volume of scattering particles account for described film layer volume 0.1～50% time, the external quantum efficiency of device is higher,
Owing to external quantum efficiency is directly proportional to light emission rate, therefore, the light emission rate of device is higher.
As can be seen from the above description, the application the above embodiments achieve following technique effect:
1), at least one the film layer in the electroluminescent device of the application includes that scattering particles, scattering particles include having
Core and shell, wherein, core uses metal to be formed, and shell is wrapped in the outside of core, and shell is inorganic matter quasiconductor, and it will be many for so using shell
Individual metal core is kept apart, it is to avoid the gathering of metal scattering particles of the prior art so that light is had relatively by scattering particles
Good dispersion effect, improves the light emission rate of electroluminescent device；Further, to have only to less particle diameter the most permissible for these scattering particles
Reach preferable dispersion effect, it is to avoid prior art uses the scattering particles of big particle diameter to cause the short circuit problem of device.
2), the display device of the application includes above-mentioned electroluminescent device so that its luminance is higher, and then makes
Its external quantum efficiency is higher.
3), the illuminator of the application include above-mentioned electroluminescent device, its luminance is higher, and then makes its outer amount
Sub-efficiency is higher.
More than above are only the preferred embodiment of the application, be not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.All within spirit herein and principle, that is made any repaiies
Change, equivalent, improvement etc., within should be included in the protection domain of the application.
Claims (10)
1. an electroluminescent device, it is characterised in that described electroluminescent device includes:
First electrode (10)；
Luminescent layer (30), is arranged on the surface of described first electrode (10)；
Second electrode (50), is arranged on the surface away from described first electrode (10) of described luminescent layer (30)；
At least one film layer, is arranged between described first electrode (10) and described luminescent layer (30), and/or is arranged on described
Between two electrodes (50) and described luminescent layer (30), wherein, at least one described film layer includes main body and is dispersed in described main body
In scattering particles (01), described scattering particles (01) include that core (011) and shell (012), described shell (012) parcel are arranged on institute
Stating core (011) outside, the material forming described core (011) is metal, and the material forming described shell (012) is inorganic semiconductor material
Material, described main body has electric conductivity.
Electroluminescent device the most according to claim 1, it is characterised in that described metal is noble metal or copper, described expensive
Metal is silver, gold and one or more in platinum.
Electroluminescent device the most according to claim 1, it is characterised in that described inorganic semiconductor material is silicon, oxidation
Titanium, tantalum oxide, niobium oxide, zirconium oxide, aluminium oxide, tungsten oxide, stibium oxide, vanadium oxide, molybdenum oxide, chromium oxide, ferrum oxide, oxidation
In copper, lead oxide, yittrium oxide, manganese oxide, stannum oxide, zinc oxide, vulcanized lead, zinc sulfide, cadmium sulfide, zinc telluridse and cadmium selenide
One or more.
Electroluminescent device the most according to claim 1, it is characterised in that the mean diameter of described core (011) 2～
Between 30nm, the mean diameter of described scattering particles (01) is between 14～150nm.
Electroluminescent device the most according to claim 1, it is characterised in that described scattering particles (01) be spherical particles or
Spheroid granule.
Electroluminescent device the most according to claim 1, it is characterised in that the volume of described scattering particles (01) accounts for described
The 0.1～50% of the volume of film layer.
Electroluminescent device the most according to any one of claim 1 to 6, it is characterised in that described electroluminescent device
Using thin-film package, the thickness of described thin film is less than or equal to 20 μm, preferably lower than or equal to 2 μm.
Electroluminescent device the most according to any one of claim 1 to 6, it is characterised in that described electroluminescent device
For quanta point electroluminescent device, described luminescent layer (30) is quantum dot light emitting layer.
9. a display device, including electroluminescent device, it is characterised in that described electroluminescent device is claim 1 to 8
According to any one of electroluminescent device.
10. an illuminator, including electroluminescent device, it is characterised in that described electroluminescent device be claim 1 to
Electroluminescent device according to any one of 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528821.1A CN106206979A (en) | 2016-06-30 | 2016-06-30 | Electroluminescent device, the display device with it and illuminator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528821.1A CN106206979A (en) | 2016-06-30 | 2016-06-30 | Electroluminescent device, the display device with it and illuminator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106206979A true CN106206979A (en) | 2016-12-07 |
Family
ID=57466460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610528821.1A Pending CN106206979A (en) | 2016-06-30 | 2016-06-30 | Electroluminescent device, the display device with it and illuminator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018107789A1 (en) * | 2016-12-15 | 2018-06-21 | Tcl集团股份有限公司 | Precious metal nanomaterial-containing qled and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102365767A (en) * | 2009-03-30 | 2012-02-29 | 富士胶片株式会社 | Light emitting device |
| CN103872261A (en) * | 2014-02-28 | 2014-06-18 | 京东方科技集团股份有限公司 | Organic electroluminescent device and display device |
| US20150263252A1 (en) * | 2012-07-03 | 2015-09-17 | Invensas Corporation | Optical enhancement of light emitting devices |
| KR20160027430A (en) * | 2014-08-29 | 2016-03-10 | 한국전자통신연구원 | Organic light emitting device |
| CN105633244A (en) * | 2016-02-05 | 2016-06-01 | 纳晶科技股份有限公司 | Electroluminescent device and display device with same and lighting device |
-
2016
- 2016-06-30 CN CN201610528821.1A patent/CN106206979A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102365767A (en) * | 2009-03-30 | 2012-02-29 | 富士胶片株式会社 | Light emitting device |
| US20150263252A1 (en) * | 2012-07-03 | 2015-09-17 | Invensas Corporation | Optical enhancement of light emitting devices |
| CN103872261A (en) * | 2014-02-28 | 2014-06-18 | 京东方科技集团股份有限公司 | Organic electroluminescent device and display device |
| KR20160027430A (en) * | 2014-08-29 | 2016-03-10 | 한국전자통신연구원 | Organic light emitting device |
| CN105633244A (en) * | 2016-02-05 | 2016-06-01 | 纳晶科技股份有限公司 | Electroluminescent device and display device with same and lighting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018107789A1 (en) * | 2016-12-15 | 2018-06-21 | Tcl集团股份有限公司 | Precious metal nanomaterial-containing qled and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7902748B2 (en) | Electroluminescent device having improved light output | |
| KR101620870B1 (en) | Light-emitting diode comprising surface modified zinc oxide as material for electron transport layer | |
| Ji et al. | Highly efficient flexible quantum-dot light emitting diodes with an ITO/Ag/ITO cathode | |
| CN105633244B (en) | Electroluminescent device, display device and lighting device with it | |
| US10651339B2 (en) | Light emitting element and display device including the same | |
| TW201301612A (en) | Organic electroluminescence device | |
| CN109244266B (en) | Lighting apparatus using organic light emitting diode and method of manufacturing the same | |
| CN110416421A (en) | A kind of quantum dot film and light emitting diode with quantum dots | |
| CN111244295B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN104779353A (en) | Horizontal OLED/QLED light emitting device | |
| CN212230460U (en) | Light emitting device and display apparatus | |
| CN211700337U (en) | Multilayer light-emitting quantum dot device | |
| CN209912898U (en) | Quantum dot light emitting diode | |
| CN106206979A (en) | Electroluminescent device, the display device with it and illuminator | |
| WO2020258659A1 (en) | Quantum dot light-emitting diode device and preparation method therefor | |
| CN106058072B (en) | Electroluminescent device, there is its display device and lighting device | |
| CN113130794B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN111883681B (en) | Light emitting device, manufacturing method thereof and display device | |
| CN211719621U (en) | Quantum dot device and display device | |
| CN112331787B (en) | Application of metal tetraphenylporphyrin complex in electron transport material, quantum dot light-emitting device and preparation method thereof, and light-emitting device | |
| CN106575665A (en) | Optoelectronic component device and method for producing an optoelectronic component device | |
| CN105895814B (en) | It is inverted blue light quantum point membrane electro luminescent device | |
| CN112164741B (en) | Charge transport layer and light emitting device | |
| CN112331786B (en) | Light emitting device and method of manufacturing the same | |
| CN109088010A (en) | A kind of silver magnesium alloy electrode and a kind of Organic Light Emitting Diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161207 |