CN209912898U - Quantum dot light emitting diode - Google Patents
Quantum dot light emitting diode Download PDFInfo
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- CN209912898U CN209912898U CN201921091313.7U CN201921091313U CN209912898U CN 209912898 U CN209912898 U CN 209912898U CN 201921091313 U CN201921091313 U CN 201921091313U CN 209912898 U CN209912898 U CN 209912898U
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Abstract
The embodiment of the utility model discloses quantum dot emitting diode, include: a substrate; an anode formed on the substrate; a hole transport layer formed on the anode; the multiple quantum well layer is formed on the hole transport layer and comprises at least two barrier layers and a light emitting layer with one layer less than the barrier layers, the barrier layers and the light emitting layer are arranged in a laminated mode at intervals, and the hole transport layer is close to the barrier layers; an electron transport layer formed in the multiple quantum well layer, adjacent to the barrier layer in the multiple quantum well layer; and a cathode formed on the electron transport layer. The embodiment of the utility model provides a technical scheme is through the barrier layer with the better restriction of carrier compound luminescence in the luminescent layer to quantum dot emitting diode's luminous efficacy has been improved.
Description
Technical Field
The embodiment of the utility model provides a relate to the semiconductor technology field, especially relate to a quantum dot emitting diode.
Background
The quantum dot is a novel luminescent material, and has the advantages of adjustable spectrum, low cost, large-area preparation and the like.
In the quantum dot light emitting diode, carriers (holes and electrons) need to be limited to a light emitting layer for recombination, but the current device structure can be limited to a certain degree, but the carriers still pass through the device structure. Therefore, in the current quantum dot light emitting diode, carriers cannot be well limited in a light emitting layer, and the technical problem that the light emitting efficiency of the device is not high exists.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiments of the present invention provide a quantum dot light emitting diode to solve the technical problem that in the current quantum dot light emitting diode in the prior art, carriers cannot be well confined in the light emitting layer, and the light emitting efficiency of the existing device is not very high.
The embodiment of the utility model provides a quantum dot emitting diode, include:
a substrate;
an anode formed on the substrate;
a hole transport layer formed on the anode;
a multiple quantum well layer formed on the hole transport layer, wherein the multiple quantum well layer comprises at least two barrier layers and a light-emitting layer with one layer less than the barrier layers, the barrier layers and the light-emitting layer are arranged in a spaced and laminated mode, and the hole transport layer is adjacent to the barrier layers; an electron transport layer formed in the MQW layer, immediately adjacent to the barrier layer in the MQW layer;
a cathode formed on the electron transport layer.
Optionally, the barrier layer is a first forbidden band quantum dot layer, the light emitting layer is a second forbidden band quantum dot layer, and a forbidden band width of the first forbidden band quantum dot layer is greater than a forbidden band width of the second forbidden band quantum dot layer.
Optionally, the thin film packaging layer is formed on the cathode.
Optionally, the hole transport layer is a poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate hole transport layer.
Optionally, the electron transport layer includes any one of a zinc oxide electron transport layer, a titanium oxide electron transport layer, and a zirconium oxide electron transport layer.
Optionally, the first forbidden quantum dot layer and the second forbidden quantum dot layer include any one of a lead sulfide quantum dot layer, a lead selenide quantum dot layer, or a lead telluride quantum dot layer.
The embodiment of the utility model provides a quantum dot light emitting diode, this quantum dot light emitting diode include the multiple quantum well layer of constituteing by barrier layer and luminescent layer, and the barrier layer is compound luminous in the luminescent layer with the better restriction of carrier to improved quantum dot light emitting diode's luminous efficacy, solved among the prior art present near-infrared quantum dot light emitting diode, the carrier can not be fine by the restriction at the luminescent layer, and the luminous efficacy who has the device is very high technical problem not.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another quantum dot light emitting diode according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing a light emitting diode with quantum dots according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
The embodiment of the utility model provides a quantum dot emitting diode's schematic structure diagram, as shown in FIG. 1, this quantum dot emitting diode includes: a substrate 1; an anode 2 formed on the substrate 1; a hole transport layer 3 formed on the anode 2; a multiple quantum well layer 4 formed on the hole transport layer 3, the multiple quantum well layer 4 including at least two barrier layers 41 and a light emitting layer 42 with one layer less than the barrier layers 41, the barrier layers 41 and the light emitting layer 42 being stacked at intervals, the hole transport layer 3 being adjacent to the barrier layers 41; an electron transport layer 5 formed in the multiple quantum well layer 4, next to the barrier layer 41 in the multiple quantum well layer 4; and a cathode 6 formed on the electron transport layer 5.
It should be noted that, in the structural schematic diagram of the quantum dot light emitting diode shown in fig. 1, a three-layer barrier layer 41 and a two-layer light emitting layer 42 are exemplarily shown, wherein the hole transport layer 3 is adjacent to the barrier layer 41. The embodiment of the present invention is not limited to the specific number of layers of the barrier layer 41 and the light-emitting layer 42.
In the present embodiment, Indium Tin Oxide (ITO) conductive glass with good transmittance may be selected as the anode. Higher work function metals such as silver and aluminum may be used for the cathode.
In the present embodiment, the light emission mechanism of the quantum dot light emitting diode is as follows:
the quantum dot light emitting diode has positive voltage applied to the anode and negative voltage applied to the cathode, and under the action of an external electric field, carriers are injected from the anode 2 and the cathode 6, pass through the hole transport layer 3 and the electron transport layer 5, and reach the light emitting layer 42 of the multiple quantum well layer 4 for recombination light emission. The barrier layer 41 serves to confine carriers to the light-emitting layer 42 and to emit light in a recombination manner.
The embodiment of the utility model provides a quantum dot light emitting diode, this quantum dot light emitting diode include the multiple quantum well layer of constituteing by barrier layer and luminescent layer, and the barrier layer is compound luminous in the luminescent layer with the better restriction of carrier to improved quantum dot light emitting diode's luminous efficacy, solved among the prior art present quantum dot light emitting diode, the carrier can not be fine by the restriction at the luminescent layer, and the luminous efficacy who exists the device is very high technical problem not.
Optionally, on the basis of the above technical solution, the barrier layer 41 is a first forbidden quantum dot layer, the light emitting layer 42 is a second forbidden quantum dot layer, and a forbidden bandwidth of the first forbidden quantum dot layer is greater than a forbidden bandwidth of the second forbidden quantum dot layer. The barrier layer has a band gap larger than that of the light-emitting layer, and carriers injected from the anode 2 and the cathode 6 are confined in the light-emitting layer 42 to cause recombination light emission.
Optionally, on the basis of the above technical solution, referring to fig. 2, the quantum dot light emitting diode provided in the embodiment of the present invention further includes a thin film encapsulation layer 7 formed on the cathode 6. The thin film encapsulation layer 7 is used for preventing external water and oxygen from invading and influencing the light emitting performance of the quantum dot light emitting diode, and the material thereof is selected, for example, an organic material layer, an inorganic material layer, or a lamination formed by organic materials and inorganic materials.
In the present embodiment, the light emission mechanism of the quantum dot light emitting diode is as follows: and carriers are injected from the anode and the cathode, pass through the hole transport layer and the electron transport layer, and reach the light emitting layer in the multiple quantum well layer for composite light emission. The barrier layer 41 functions to confine carriers to the light-emitting layer 42 and to emit light in a recombination manner.
The quantum dots are zero-dimensional semiconductor nanoparticles and have nanometer effects such as quantum confinement effect, quantum size effect, quantum surface effect and the like. The particle size of a quantum dot is smaller than the exciton bohr radius of its corresponding bulk material, and quasi-continuous band splitting into discrete energy levels due to quantum confinement effects occurs. The smaller the size of the nano-particles, the larger the energy level splitting, the wider the forbidden band, and the blue shift of the luminescence spectrum of the quantum dots along with the reduction of the size of the particles, so the luminescence wavelength can be adjusted by adjusting the size of the quantum dots. Wherein the size of the quantum dot can be controlled by adjusting the synthesis temperature and the synthesis time in the process of preparing the quantum dot.
Optionally, on the basis of the above technical solution, the hole transport layer 3 is a poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate hole transport layer. Wherein, the hole transport layer of Poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonate (Poly (3, 4-ethylenedioxythiophene)/Poly (phenylenesulfonato), PEDOT/PSS) plays a role of transporting holes.
Optionally, on the basis of the above technical solution, the electron transport layer 5 includes any one of a zinc oxide electron transport layer, a titanium oxide electron transport layer, and a zirconium oxide electron transport layer, and plays a role in transporting electrons.
Optionally, on the basis of the above technical solution, the first and second forbidden quantum dot layers include any one of a lead sulfide quantum dot layer, a lead selenide quantum dot layer, or a lead telluride quantum dot layer. The light-emitting wavelength of any one of the lead sulfide quantum dot layer, the lead selenide quantum dot layer or the lead telluride quantum dot layer is in an infrared band.
Example two
On the basis of the above embodiments, the embodiments of the present invention provide a method for manufacturing a quantum dot light emitting diode, which is described by taking the quantum dot light emitting diode shown in fig. 1 as an example, and the method for manufacturing the quantum dot light emitting diode is shown in fig. 3, and includes the following steps:
Referring to fig. 1, a substrate 1 is provided.
Referring to fig. 1, an anode 2 is formed on a substrate 1.
In fig. 1, a hole transport layer 3 is formed on an anode 2.
And 140, forming a multi-quantum well layer on the hole transport layer, wherein the multi-quantum well layer comprises at least two barrier layers and a light emitting layer with one layer less than the barrier layers, the barrier layers and the light emitting layer are arranged in a laminated mode at intervals, and the hole transport layer is close to the barrier layers.
Referring to fig. 1, a multiple quantum well layer 4 is formed on a hole transport layer 3, the multiple quantum well layer 4 includes at least two barrier layers 41 and a light emitting layer 42 having one layer less than the barrier layers 41, the barrier layers 41 and the light emitting layer 42 are alternately stacked, and the hole transport layer 3 is adjacent to the barrier layers 41.
And 150, forming an electron transmission layer on the multiple quantum well layer, wherein the electron transmission layer is close to the barrier layer in the multiple quantum well layer.
Referring to fig. 1, an electron transit layer 5 is formed on the multiple quantum well layer 4, next to the barrier layer 41 in the multiple quantum well layer 4.
Referring to fig. 1, a cathode 6 is formed on the electron transport layer 5.
The embodiment of the utility model provides a quantum dot emitting diode's preparation method, through forming the multiple quantum well layer of constituteing by barrier layer and luminescent layer at quantum dot emitting diode, the barrier layer is compound luminous in the luminescent layer with the better restriction of carrier to improved quantum dot emitting diode's luminous efficacy, solved among the prior art present quantum dot emitting diode, the carrier can not be fine by the restriction at the luminescent layer, and the luminous efficacy who has the device is very high technical problem not.
Optionally, on the basis of the foregoing technical solution, the step 140 of forming the multiple quantum well layer 4 on the hole transport layer 3 specifically includes: the barrier layer 41 and the light-emitting layer 42 were cross-spin-coated on the hole transport layer 3 by a solution spin coating method.
Optionally, based on the above technical solution, taking the quantum dot light emitting diode shown in fig. 2 as an example for description, after step 160, forming a thin film encapsulation layer 7 on the cathode 6 is further included.
Optionally, on the basis of the foregoing technical solution, the step 160 of forming a cathode on the electron transport layer specifically includes: a cathode is formed on the electron transport layer by an evaporation process.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (6)
1. A quantum dot light emitting diode, comprising:
a substrate;
an anode formed on the substrate;
a hole transport layer formed on the anode;
a multiple quantum well layer formed on the hole transport layer, wherein the multiple quantum well layer comprises at least two barrier layers and a light-emitting layer with one layer less than the barrier layers, the barrier layers and the light-emitting layer are arranged in a spaced and laminated mode, and the hole transport layer is adjacent to the barrier layers;
an electron transport layer formed on the MQW layer, immediately adjacent to the barrier layer in the MQW layer;
a cathode formed on the electron transport layer.
2. The quantum dot light-emitting diode of claim 1,
the barrier layer is a first forbidden band quantum dot layer, the light-emitting layer is a second forbidden band quantum dot layer, and the forbidden band width of the first forbidden band quantum dot layer is larger than that of the second forbidden band quantum dot layer.
3. The quantum dot light-emitting diode of claim 1,
and a thin film encapsulation layer formed on the cathode.
4. The quantum dot light-emitting diode of claim 1,
the hole transport layer is a poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate hole transport layer.
5. The quantum dot light-emitting diode of claim 1,
the electron transport layer comprises any one of a zinc oxide electron transport layer, a titanium oxide electron transport layer and a zirconium oxide electron transport layer.
6. The QD LED of claim 2,
the first forbidden quantum dot layer and the second forbidden quantum dot layer include any one of a lead sulfide quantum dot layer, a lead selenide quantum dot layer, or a lead telluride quantum dot layer.
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| CN201921091313.7U CN209912898U (en) | 2019-07-12 | 2019-07-12 | Quantum dot light emitting diode |
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| CN201921091313.7U CN209912898U (en) | 2019-07-12 | 2019-07-12 | Quantum dot light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364635A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Light emitting diode with quantum dots and preparation method |
| CN112909193A (en) * | 2021-01-26 | 2021-06-04 | 京东方科技集团股份有限公司 | Organic light emitting device, display device and manufacturing method |
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2019
- 2019-07-12 CN CN201921091313.7U patent/CN209912898U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364635A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Light emitting diode with quantum dots and preparation method |
| CN112909193A (en) * | 2021-01-26 | 2021-06-04 | 京东方科技集团股份有限公司 | Organic light emitting device, display device and manufacturing method |
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