CN106206778B - A kind of crystalline silicon solar battery and its nano surface composite construction preparation method - Google Patents
A kind of crystalline silicon solar battery and its nano surface composite construction preparation method Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- 238000010276 construction Methods 0.000 title claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 39
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 39
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 36
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims abstract description 23
- 210000004027 cell Anatomy 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000002923 metal particle Substances 0.000 claims abstract description 6
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 5
- 238000012986 modification Methods 0.000 claims abstract description 4
- 230000004048 modification Effects 0.000 claims abstract description 4
- 239000002114 nanocomposite Substances 0.000 claims abstract description 3
- 239000002105 nanoparticle Substances 0.000 claims description 31
- 229910000078 germane Inorganic materials 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 11
- 150000002290 germanium Chemical class 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims 1
- 239000002082 metal nanoparticle Substances 0.000 abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- 150000002431 hydrogen Chemical class 0.000 abstract description 9
- 238000004062 sedimentation Methods 0.000 abstract description 9
- 238000010790 dilution Methods 0.000 abstract description 2
- 239000012895 dilution Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000013528 metallic particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
A kind of crystalline silicon solar battery of the present invention and its nano surface composite construction preparation method, method is simple, one-step synthesis, and cost low quality is high, significantly improves the performance of battery.The method is to prepare metal nanoparticle using plasma enhanced chemical vapor deposition method on crystalline silicon solar cell surface existing structure.The surface of the battery is the nano composite structure being prepared by the method for the invention.Using plasma enhances chemical vapor deposition (PECVD) and generates active group by the plasma discharge of gas to promote the reaction of nano-metal particle generation, nano-metal particle one-step synthesis, and it can uniformly be arranged in surface of crystalline silicon, by optimizing sedimentation time, depositing temperature and the hydrogen dilution ratio of germanium quantum point, depositing operation combination is made to reach left and right.Germanium quantum point is obtained under optimal depositing operation, through hydrogen plasma process, is passivated germanium quantum point surface dangling bonds, modification of surfaces pattern makes it be uniformly dispersed.
Description
Technical field
The present invention relates to technical field of solar batteries, specially a kind of crystalline silicon solar battery and its nano surface
Composite construction preparation method.
Background technique
Recently, with the development of research and production technology, solar battery will play significant role in traditional energy field.
Mainly there are silicon systems solar battery, multicomponent compound film solar battery and organic dye sensitized solar energy in present market
Battery etc..Wherein silicon systems solar battery becomes the leading production of solar battery because of it in the advantage in terms of raw material deposit
Product maintain 80% or more occupation rate of market.Compared with other kinds of solar battery, research and production are opposite
Mature and stable, photoelectric conversion efficiency is higher, and between the coming years, the great demand of world community photovoltaic power generation will promote silicon systems
The growth momentum of solar battery will keep powerful without taking a turn for the worse.Although silicon systems solar battery has many advantages,
But silicon materials price is relatively high, this makes it in the status in price in more weak tendency.It therefore, is raising silicon systems solar energy
The competitiveness of battery, improving its photoelectric conversion efficiency is a kind of wherein mode the most direct, is drawn in silicon systems solar battery
Enter nano particle, the capture of incident photon is improved using the quantum size effect of nano particle, improves solar battery to light
Utilization rate helps to improve the photoelectric conversion efficiency of battery, cost can be effectively reduced.Therefore, the quantum of nano particle is utilized
Dimensional effect becomes a hot topic of current research solar battery to improve the transfer efficiency of silicon systems solar battery.
Now, a kind of effective means for reaching raising light capture is exactly that nano junction is added in silicon systems solar cell interface
Structure, such as nano particle, nano wire, nanometer hole etc., the method generallyd use are that magnetron sputtering, chemical deposition or thermal evaporation are moved back again
The method of fire forms metallic particles in silicon systems solar cell interface, these metallic particles are just used as the catch mechanism of light to make silicon substrate
Thin-film solar cells light absorption improves.But the operation of these methods is comparatively laborious, technological temperature is higher, matches with industry flexibly
Property it is poor, and it is possible to silicon systems battery interface introduce defect, reduce efficiency, this is likely to will affect silica-based solar
The future development of battery.The preparation method of existing nano particle is to make the chemical combination such as rich metal oxide or nitride at high temperature
Object appearance mutually separates, and this synthetic method needs to anneal, and when high annealing can lead to the problem of very much.For example, excessive temperature is uncomfortable
For most substrate material, so being unfavorable for device manufacture；In addition high-temperature annealing process increases energy consumption, improves cost.And it adopts
The nano particle prepared with solwution method, needs to carry out spray operation, wherein not can guarantee the cleaning of battery, also not can avoid solution
Impurity pollution, battery quality are low in residual or air.
Summary of the invention
Aiming at the problems existing in the prior art, the present invention provides a kind of crystalline silicon solar battery and its nano surface
Composite construction preparation method, method is simple, can one-step synthesis, low in cost, quality is high, can significantly improve the property of battery
Energy.
The present invention is to be achieved through the following technical solutions:
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle is prepared using plasma enhanced chemical vapor deposition method on the existing structure of surface.
Preferably, the metal nanoparticle size of plasma enhanced chemical vapor deposition method preparation is at 1 nanometer to 500
Between nanometer.
Preferably, metal nanoparticle is germanium nano particle.
Preferably, the precursor gas that plasma enhanced chemical vapor deposition method uses includes germane and hydrogen.
Preferably, 200-300 DEG C of the depositing temperature of plasma enhanced chemical vapor deposition metal nano.
Preferably, plasma enhanced chemical vapor deposition uses DC power supply or AC power source, when using AC power source,
Its frequency is between 100Hz -100MHz.
Preferably, it is comprised the following steps that when plasma enhanced chemical vapor deposition method prepares metal nanoparticle
Step 1, the deposit Germanium nano particle under germane and hydrogen atmosphere；
Step 2, deposition power identical with step 1 is kept, in hydrogen atmosphere, by hydrogen plasma to germanium nanometer
Grain is surface modified.
Further, surface modification forms nanoscale texture.
A kind of crystalline silicon solar battery, the surface of crystalline silicon solar battery is by any one above-described side
The nano composite structure that method is prepared.
Compared with prior art, the invention has the following beneficial technical effects:
Using plasma enhancing chemical vapor deposition (PECVD) of the present invention generates activity by the plasma discharge of gas
Group is come the reaction that promotes nano-metal particle to generate, nano-metal particle one-step synthesis, and capable of being uniformly arranged in
Surface of crystalline silicon reaches depositing operation combination by optimizing sedimentation time, depositing temperature and the hydrogen dilution ratio of germanium quantum point
Left and right.Germanium quantum point is obtained under optimal depositing operation, through hydrogen plasma process, is passivated germanium quantum point surface dangling bonds, modification
Surface topography makes it be uniformly dispersed.This method can significantly reduce germanium quantum preparation temperature, its script is made to need to carry out at high temperature
Reaction can carry out at a lower temperature and without annealing, be suitble to prepare the crystalline silicon electricity of large area under cryogenic
Pond.And preparation to silicon systems solar battery is completed under vacuum conditions, and pollution of other impurity to battery is avoided, it is not only former
Material is easier to obtain, and at low cost, easy to operate, product quality is higher, is suitable for industrialized production, and can react by adjusting
Gas flow ratio controls the size of metal nanoparticle, simplifies preparation facilities, improves production efficiency.
Further, when germanium metallic particles diameter reaches Nano grade formation quantum dot, quantum confined effect is generated, and utilizes
Exciton Bohr Radius and the biggish germanium quantum point of vibration wavelength adjust partial size and intergranular size, so that quantum dot is as device
The light absorption center of part, increases the light utilization efficiency of solar battery, improves the short circuit current of battery, improves battery efficiency.
Detailed description of the invention
Fig. 1 is the schematic cross-section of crystalline silicon solar cell surface in present example 1.
Fig. 2 is the transmission electron microscope image of silicon systems solar cell surface nanoparticle structure in present example 1.
Fig. 3 is the x-ray photoelectron energy of the germanium nano particle of silicon systems solar cell surface described in present example 1
Spectrum.
Fig. 4 is crystalline silicon quantum efficiency of solar battery figure described in present example 1.
In figure, 1 is metal nanoparticle, and 2 be crystalline silicon solar battery existing structure.
Specific embodiment
Below with reference to specific embodiment, the present invention is described in further detail, it is described be explanation of the invention and
It is not to limit.
Embodiment 1
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 100sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 100:2, sedimentation time 30s, and 200 DEG C of depositing temperature, deposition power 80W, plasma increases
Extensive chemical vapor deposition uses AC power source, and frequency 20MHz obtains the metal nano of crystalline silicon solar cell surface
The diameter of particle 1 is 3 nanometers.And identical deposition power is kept, in hydrogen atmosphere, by hydrogen plasma to germanium nanometer
Grain is surface modified, and forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Obtained silicon systems solar battery uses Hitachi S8200 field emission scanning electron microscope, XPS (X-ray photoelectricity
Sub- energy spectrum analysis) and quantum efficiency tester characterized, the nano particle on surface is shown in Fig. 2, utilizes the result of quantum efficiency
Short-circuit current density is calculated, as a result sees Fig. 3 and Fig. 4, as seen from Figure 3, XPS analysis as a result, it has been found that obtained nano particle
For the nano particle of germanium metal；From fig. 4, it can be seen that whether there is or not the comparisons of the cell reflective rate of germanium nano particle to find, it is greater than in wavelength
The wave band of 550nm, due to the addition of germanium quantum point, the reflectivity of battery is reduced, and shows that battery increases the light absorption of this wave band.
Embodiment 2
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 150sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 150:2, sedimentation time 30s, and 260 DEG C of depositing temperature, deposition power 80W, plasma increases
Extensive chemical vapor deposition uses AC power source, frequency 100Hz, and the diameter of obtained metal nanoparticle 1 is 1 nanometer.For
The better performance for improving crystalline silicon solar battery further can keep identical deposition power, in hydrogen
In atmosphere, germanium nano particle is surface modified by hydrogen plasma, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Embodiment 3
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 110sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 110:2, sedimentation time 40s, and 300 DEG C of depositing temperature, deposition power 90W, plasma increases
Extensive chemical vapor deposition uses AC power source, frequency 40MHz, and the diameter of obtained metal nanoparticle 1 is 100 nanometers.
The performance of crystalline silicon solar battery in order to better improve further can keep identical deposition power, in hydrogen
In gas atmosphere, germanium nano particle is surface modified by hydrogen plasma, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Embodiment 4
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 110sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 110:2, sedimentation time 90s, and 220 DEG C of depositing temperature, deposition power 70W, plasma increases
Extensive chemical vapor deposition uses AC power source, frequency 60MHz, and the diameter of obtained metal nanoparticle 1 is 200 nanometers.
The performance of crystalline silicon solar battery in order to better improve further can keep identical deposition power, in hydrogen
In gas atmosphere, germanium nano particle is surface modified by hydrogen plasma, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Embodiment 5
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 120sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 120:2, sedimentation time 90s, and 200 DEG C of depositing temperature, deposition power 80W, plasma increases
Extensive chemical vapor deposition uses AC power source, frequency 10MHz, and the diameter of obtained metal nanoparticle 1 is 15 nanometers.For
The better performance for improving crystalline silicon solar battery further can keep identical deposition power, in hydrogen
In atmosphere, germanium nano particle is surface modified by hydrogen plasma, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Embodiment 6
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 130sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 130:2, sedimentation time 10s, and 300 DEG C of depositing temperature, deposition power 100W, plasma increases
Extensive chemical vapor deposition uses AC power source, frequency 100MHz, and the diameter of obtained metal nanoparticle 1 is 200 nanometers.
The performance of crystalline silicon solar battery in order to better improve further can keep identical deposition power, in hydrogen
In gas atmosphere, germanium nano particle is surface modified by hydrogen plasma, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Embodiment 7
A kind of nano surface composite construction preparation method of crystalline silicon solar battery, in crystalline silicon solar battery
Metal nanoparticle 1 is prepared using plasma enhanced chemical vapor deposition method on surface existing structure 2.It specifically includes as follows
Step:
Crystalline silicon solar cell surface existing structure 2 is put into PECVD (plasma enhanced chemical vapor deposition)
In chamber, gas source is respectively germane and hydrogen, Germane gas flow 140sccm, hydrogen gas flow 2sccm, thus germanium metal
The diluted in hydrogen ratio of nano particle is 140:2, sedimentation time 60s, and 240 DEG C of depositing temperature, deposition power 60W, plasma increases
Extensive chemical vapor deposition uses DC power supply, and the diameter of obtained metal nanoparticle 1 is 500 nanometers.In order to better improve
The performance of crystalline silicon solar battery further can keep identical deposition power to pass through hydrogen in hydrogen atmosphere
Plasma is surface modified germanium nano particle, forms nanoscale texture.
A kind of crystalline silicon solar battery, back electrode, nano surface including successively preparing on crystal silicon chip are compound
Structure and top electrode, the above-mentioned preparation method of nano surface composite construction are made.
Claims (4)
1. a kind of nano surface composite construction preparation method of crystalline silicon solar battery, which is characterized in that in crystalline silicon
On solar cell surface existing structure, using plasma enhanced chemical vapor deposition method preparation size at 1 nanometer to 500
Germanium nano particle between nanometer, is surface modified to form nanoscale texture；
The precursor gas that plasma enhanced chemical vapor deposition method uses includes germane and hydrogen；By gas it is equal from
The reaction that electron discharge generates active group germanium nano-metal particle is promoted to generate, germanium nano-metal particle one-step synthesis, and energy
It is enough to be uniformly arranged in surface of crystalline silicon, obtain germanium quantum point；
Identical power when keeping when preparing germanium nano particle with germanium nanoparticle deposition, in hydrogen atmosphere, by hydrogen etc. from
Daughter is surface modified germanium nano particle, is passivated germanium quantum point surface dangling bonds, and modification of surfaces pattern keeps its dispersion equal
It is even.
2. a kind of nano surface composite construction preparation method of crystalline silicon solar battery according to claim 1,
It is characterized in that, 200-300 DEG C of the depositing temperature of plasma enhanced chemical vapor deposition metal nano.
3. a kind of nano surface composite construction preparation method of crystalline silicon solar battery according to claim 1,
It is characterized in that, plasma enhanced chemical vapor deposition uses DC power supply or AC power source, when using AC power source, frequency
Between 100Hz -100MHz.
4. a kind of crystalline silicon solar battery, which is characterized in that the surface of crystalline silicon solar battery is by claim
The nano composite structure that any one method is prepared described in 1-3.
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| JP2010129379A (en) * | 2008-11-27 | 2010-06-10 | Toda Kogyo Corp | Wetting gel film, transparent and conductive film, transparent and conductive film laminated substrate, and method for manufacturing the same |
| CN102332477A (en) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | Light trapping structure for monocrystalline silicon solar cell |
| CN102646745A (en) * | 2012-04-01 | 2012-08-22 | 北京大学深圳研究生院 | Photovoltaic device and solar battery |
| CN103022266A (en) * | 2013-01-09 | 2013-04-03 | 华北电力大学 | Method for manufacturing novel light-trapping synergetic antireflection structure on basis of LSP (localized surface plasma) effect |
| CN104617176A (en) * | 2015-02-10 | 2015-05-13 | 陕西师范大学 | Silicon-based thin-film solar cell and preparation method thereof |
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