CN209507579U - The InGaN nano-pillar being grown on Ti substrate - Google Patents
The InGaN nano-pillar being grown on Ti substrate Download PDFInfo
- Publication number
- CN209507579U CN209507579U CN201821604602.8U CN201821604602U CN209507579U CN 209507579 U CN209507579 U CN 209507579U CN 201821604602 U CN201821604602 U CN 201821604602U CN 209507579 U CN209507579 U CN 209507579U
- Authority
- CN
- China
- Prior art keywords
- substrate
- pillar
- grown
- nano
- ingan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses the InGaN nano-pillars being grown on Ti substrate, including the AlN buffer layer being grown on Ti substrate, the InGaN nano-pillar that is grown on AlN buffer layer.The Ti substrate that the utility model uses is cheap, advantageously reduces device cost；Secondly, the Ti substrate conduction performance that the utility model uses is good, device technology can be simplified without preparing Ohm contact electrode directly as the electrode of device.The InGaN nano-pillar crystal quality of the utility model is good, and forbidden bandwidth is adjustable, and large specific surface area is, it can be achieved that visible light responds, suitable for photoelectrolysis aquatic products hydrogen.
Description
Technical field
The utility model relates to InGaN nano-pillar fields, in particular to the InGaN nano-pillar being grown on Ti substrate.
Background technique
Hydrogen Energy has many advantages, such as that energy density is high, recyclable and environmentally protective, in science and techniques of defence, space flight and aviation, work
It is largely used in industry production.As a kind of ideal energy carrier, hydrogen can generate power (such as Hydrogen fuel wheel by burning
Machine, hydrogen vehicle engine etc.), each class of electronic devices and electric drive vehicle can also be driven by modes such as hydrogen fuel cells.Photoelectricity
Chemical (Photoelectrochemical, PEC) solution aquatic products hydrogen can solar energy effectively be converted and be stored as it is clean,
Reproducible Hydrogen Energy has important research significance.
In the past few decades, researcher is directed generally to explore the semiconductor material that can be realized efficient PEC Xie Shui
Material.Wherein, (In) GaN material band gap is adjustable, it can be achieved that photoelectrolysis aquatic products hydrogen in visible spectrum, causes researcher
Extensive concern.In addition, showing some unique property when (In) GaN material narrows down to the nano-pillar of nano-scale
Can: (1) (In) GaN nano-pillar have high specific surface area, and high specific surface area makes strain effectively be relaxed in nano-pillar side wall
Henan can significantly reduce defect concentration, and then reduce the probability of carrier non-radiative recombination；(2) nanometer rod structure reduces photoproduction
Carrier reduces the probability of recombination of photo-generated carrier to semiconductor/electrolyte interface migration distance, is more advantageous to photoproduction electricity
Son, hole respectively attend liberation of hydrogen, oxygen evolution reaction；(3) specific surface area of nano-pillar superelevation can enhance light absorption, improve to the sun
The utilization of light, and increase semiconductor/electrolyte interfacial reaction area.In conclusion (In) GaN nano-pillar is in photoelectrolysis
Aquatic products hydrogen field has unique advantage, is ideal photoelectrolysis water material.
Currently, (In) GaN nano-pillar is mainly based upon sapphire, single crystal Si substrate.And they often there is resistivity
Larger (1014 Ω cm of sapphire, adulterate the Ω of Si~10 cm), it is at high cost the problems such as.The biggish sapphire of resistivity, monocrystalline
Substrate material of the Si as (In) GaN nanometers of base for post optoelectronic poles needs to be deposited more metal layers and prepares ohm when preparing electrode
Electrode is contacted, the complexity of device technology is increased.Therefore one kind substrate material that is cheap, conducting electricity very well is found to answer
It is great to (In) GaN nano-pillar photoelectrolysis aquatic products hydrogen application value for growing (In) GaN nano-pillar.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the utility model is at low cost using one kind, conducts electricity very well
Ti metal substrate.Metal Ti substrate conducts electricity very well, can be directly as the electrode of device, without preparing Ohmic contact electricity
Pole simplifies device technology.Again, metal Ti substrate price is relatively low, advantageously reduces device cost.
The purpose of this utility model is to provide a kind of InGaN nano-pillars being grown on Ti substrate.InGaN epitaxial layer
The nanometer rod structure for being reduced in size to nanometer range formation is deformation relaxation, and almost without defect, crystal quality is high.
The purpose of this utility model is achieved through the following technical solutions.
The InGaN nano-pillar being grown on Ti substrate, including Ti substrate 1, the AlN buffer layer 2 being grown on Ti substrate 1,
The InGaN nano-pillar 3 being grown on AlN buffer layer 2.
Preferably, the Ti substrate is general T i metal.
Preferably, the AlN buffer layer with a thickness of 5~50nm, it is raw when the thickness of AlN buffer layer reaches 5~50nm
The stress of long InGaN nano-pillar is released.In addition, InGaN nano-pillar makes strain in nanometer due to biggish specific surface area
Column side wall is conducive to the InGaN nano-pillar that high quality is grown in Ti metal substrate by effective relaxation.
Preferably, the InGaN nano-pillar includes GaN, InGaN, InN nano-pillar and InGaN/GaN, InN/InGaN
Core/shell structure nano-pillar.
Preferably, the height of the InGaN nano-pillar is 60~2000nm, and diameter is 15~500 nm.
The preparation method of the above-described InGaN nano-pillar being grown on Ti substrate, comprising the following steps:
(1) selection of substrate: Ti substrate is used；
(2) substrate surface polishes: Ti substrate surface being polished with diamond mud, cooperates optical microphotograph sem observation Ti
Substrate surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing；
(3) substrate cleans: the Ti substrate after step (2) polishing being cleaned by ultrasonic, to remove remained on surface organic matter, finally
It is dried up with high-purity drying nitrogen；
(4) substrate annealing is handled: Ti substrate obtained by step (3) being put into reaction chamber, is served as a contrast at 900~1100 DEG C to Ti
Bottom is made annealing treatment, to obtain smooth surface；
(5) preparation of AlN buffer layer: Ti underlayer temperature obtained by rate-determining steps (4) is 450~550 DEG C, revolving speed 5-
10r/min, deposition thickness are the metal Al film of 5~50nm, then carry out nitrogen to metal Al film using Nitrogen plasma source
Change, plasma source power is 200~450 W, and nitrogen flow is 1~5sccm, AlN buffer layer is obtained on Ti substrate, favorably
In the growth for carrying out subsequent InGaN nano-pillar；
(6) growth of InGaN nano-pillar: using molecular beam epitaxial growth technique, and control underlayer temperature is 450~1000
DEG C, substrate revolving speed is 5-10r/min, and Ga line flow is 1.0 × 10-8~1.5 × 10-7Torr, In line flow be 1.0 ×
10-8~5 × 10-7Torr, nitrogen flow are 1~5sccm, plasma source power 200-450W, are obtained in step (5)
InGaN nano-pillar is grown on AlN buffer layer.
Preferably, step (3) ultrasonic cleaning be Al substrate acetone, ethyl alcohol, water is cleaned by ultrasonic to 2 respectively~
5min。
Preferably, the time of step (4) described annealing is 0.5~1 hour.
Preferably, the time of step (5) described nitridation is 10~30 minutes.
Application of the above-described InGaN nano-pillar being grown on Ti substrate in photoelectrolysis aquatic products hydrogen.
Compared with prior art, the utility model has the following advantages and beneficial effects:
(1) the utility model uses general T i metal as substrate, relative to other substrate materials, such as sapphire, monocrystalline
Si substrate, cheaper can reduce device manufacturing cost.
(2) substrate material of the Ti metal as growth InGaN nano-pillar, can be directly as the electrode of device.In this way, being not necessarily to
Vapor deposition multiple layer metal prepares Ohm contact electrode, simplifies device preparation technology.
(3) at normal temperature, one layer easily generated of surface of metal titanium very thin fine and close oxide film, can resist strong acid
The even effect of chloroazotic acid, shows excellent chemical stability.Accordingly, with respect to other metal substrate materials, Ti metal is more suitable
For being applied to photoelectrolysis aquatic products hydrogen as substrate material growth InGaN nano-pillar.
(4) the utility model uses Ti metal as substrate, when AlN buffer layer thickness reaches 5~50nm, InGaN nanometers
Column is in relaxed state.In addition, InGaN nano-pillar makes strain effectively be relaxed in nano-pillar side wall due to biggish specific surface area
Henan is conducive to the InGaN nano-pillar that high quality is grown in Ti metal substrate.
(5) the InGaN nano-pillar of the utility model, crystal quality is high, and dislocation density is low.On the one hand, AlN buffer layer is adopted
With reducing the lattice mismatch between Ti substrate and InGaN, the formation of dislocation can be efficiently reduced, be conducive to high quality
The growth of InGaN nano-pillar；On the other hand, InGaN nanometers of rod structures are deformation relaxations, almost without defect, crystal quality
It is high.The InGaN nano-pillar for the high-crystal quality being finally prepared, significantly reduces the probability of carrier non-radiative recombination, can
InGaN nano-pillar is increased substantially in photoelectrolysis aquatic products hydrogen using upper photoelectric conversion efficiency.
(6) for InGaN nano-pillar by adjusting In component, band gap is adjustable in 0.67-3.4eV range, it can be achieved that visible
Photoelectrolysis aquatic products hydrogen in light spectral region improves the utilization rate to sunlight.
(7) the InGaN nano-pillar on Ti substrate is grown in when being applied to photoelectrolysis aquatic products hydrogen, and InGaN nano-pillar is received
Rice rod structure reduces photo-generated carrier to semiconductor/electrolyte interface migration distance, reduces the compound of photo-generated carrier
Probability is more advantageous to light induced electron, hole is gone to participate in liberation of hydrogen, oxygen evolution reaction respectively.
(8) specific surface area of InGaN nano-pillar superelevation can enhance light absorption, improve the utilization to sunlight, and increase
Big semiconductor/electrolyte interfacial reaction area, is conducive to improve the energy conversion efficiency that solar energy is converted into Hydrogen Energy.
Detailed description of the invention
Fig. 1 is the schematic cross-section that embodiment 1 is grown in the InGaN nano-pillar on Ti substrate.
Fig. 2 is the SEM top view that embodiment 1 is grown in InGaN nano-pillar on Ti substrate.
Specific embodiment
Below with reference to embodiment, the utility model is described in further detail, but the embodiments of the present invention
It is without being limited thereto.
Embodiment 1
It is grown in the preparation method of the InGaN nano-pillar on Ti substrate, comprising the following steps:
(1) selection of substrate: using general T i metal as substrate.
(2) substrate surface polishes: Ti substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Ti substrate acetone, ethyl alcohol, deionized water are subjected to ultrasonic cleaning 3 minutes to substrate respectively,
Finally dried up with high-purity drying nitrogen.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, is carried out annealing 0.5 to Ti substrate at 900 DEG C
Hour.
(5) formation of AlN buffer layer: at 500 DEG C, substrate revolving speed is 10r/min for underlayer temperature control, and deposition thickness is
Then the metal Al film of 30nm nitrogenizes metallic film using Nitrogen plasma source, plasma source power 350W,
Nitrogen flow is 2sccm, and nitridation time is 20 minutes, obtains AlN film.
(6) preparation of high quality InGaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 550 DEG C, lining
Bottom revolving speed is 10r/min, and In line flow is 8 × 10-8Torr, Ga line flow are 2.8 × 10-8Torr, nitrogen flow are
2.5sccm, plasma source power 400W, growth obtains InGaN nano-pillar on the AlN buffer layer that step (5) obtains.
As shown in Figure 1, the present embodiment is grown in the schematic cross-section of the InGaN nano-pillar on Ti substrate, including Ti substrate
1, the AlN buffer layer 2 being grown on Ti substrate 1, the InGaN nano-pillar 3 being grown on AlN buffer layer 2.
As shown in Fig. 2, the present embodiment is grown in the scanning electron microscope top view of InGaN nano-pillar on Ti substrate.
The InGaN nano-pillar that the present embodiment is grown on Ti substrate is used for photoelectrolysis aquatic products hydrogen: manufactured in the present embodiment
InGaN nano-pillar In content is 45%, according toCalculation formula obtains
Prepared InGaN nano-pillar band gap is 1.84eV, and spectral absorption range is 200~670nm.Prepared wide spectrum is rung
InGaN nano-pillar is fabricated to optoelectronic pole on the Ti substrate answered, the specific steps are as follows: forming ohm it is not necessary that multiple layer metal is deposited connects
Touching directly in Ti metal back side bonded metal conducting wire, and protects entire metal back side with insulating epoxy.Later, using electricity
Chem workstation carries out optical electro-chemistry test, specific as follows: using 0.5mol/L H2SO4Solution is as electrolyte, prepared light
Electrode is used as reference electrode as anode, saturated calomel electrode (SCE), and Pt line is as cathode and 300W Xe lamp (luminous intensity
~100mW/cm2) it is used as light source, test obtains density of photocurrent-bias plot.On the Ti substrate that this technique is prepared
InGaN nanometers of base for post optoelectronic poles are in 1.0V vs.SCE bias, density of photocurrent 25mA/cm2, bias photoelectric conversion efficiency
It (ABPE) is 5.75%.
Embodiment 2
It is grown in the preparation method of the InN nano-pillar on Ti substrate, comprising the following steps:
(1) selection of substrate: using general T i metal as substrate.
(2) substrate surface polishes: Ti substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Ti substrate acetone, ethyl alcohol, deionized water respectively carrying out substrate to be cleaned by ultrasonic each 2 points
Clock is finally dried up with high-purity drying nitrogen.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, is carried out annealing 0.5 to Ti substrate at 900 DEG C
Hour.
(5) formation of AlN buffer layer: at 450 DEG C, substrate revolving speed is 5r/min for underlayer temperature control, and deposition thickness is
Then the metal aluminium film of 50nm nitrogenizes metallic film using Nitrogen plasma source, the power of plasma source is
200W, nitrogen flow 5sccm, nitridation time are 30 minutes, obtain AlN buffer layer.
(6) preparation of high quality InV nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 400 DEG C, substrate
Revolving speed is 10r/min, and In line flow is 5 × 10-7Torr, Ga line flow are 1.0 × 10-8Torr, nitrogen flow are
5.0sccm, plasma source power 450W, growth obtains InGaN nano-pillar on the AlN buffer layer that step (5) obtains.
Embodiment 3
It is grown in the preparation method of the GaN nano-pillar on Ti substrate, comprising the following steps:
(1) selection of substrate: using general T i metal as substrate.
(2) substrate surface polishes: Ti substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Ti substrate acetone, ethyl alcohol, deionized water respectively carrying out substrate to be cleaned by ultrasonic each 5 points
Clock is finally dried up with high-purity drying nitrogen.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 1 to Ti substrate at 1100 DEG C
When.
(5) formation of AlN buffer layer: at 550 DEG C, substrate revolving speed is 10r/min for underlayer temperature control, and deposition thickness is
Then the metal aluminium film of 50nm nitrogenizes metallic film using Nitrogen plasma source, the power of plasma source is
450W, nitrogen flow are 1 sccm, and nitridation time is 10 minutes, obtain AlN buffer layer.
(6) preparation of high-quality GaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 1000 DEG C, substrate
Revolving speed is 5r/min, and In line flow is 1.0 × 10-8Torr, Ga line flow are 1.5 × 10-7Torr, nitrogen flow are
1.0sccm, plasma source power 200W, growth obtains GaN nano-pillar on the AlN buffer layer that step (5) obtains.
The GaN nano-pillar that the present embodiment is grown in Ti metal substrate is used for photoelectrolysis aquatic products hydrogen: the present embodiment preparation
InN nano-pillar band gap be 3.4eV, spectral absorption range be 200~365nm.It will be GaN nanometers on prepared Ti substrate
Column production is at optoelectronic pole, the specific steps are as follows: forms Ohmic contact it is not necessary that multiple layer metal is deposited, is directly bonded in Ti metal back side
Plain conductor, and entire metal back side is protected with insulating epoxy.Later, optical electro-chemistry survey is carried out using electrochemical workstation
Examination, it is specific as follows: to use 0.5mol/L HBr solution as electrolyte, prepared optoelectronic pole is as anode, saturated calomel electrode
(SCE) it is used as reference electrode, Pt line is as cathode and 300W Xe lamp (luminous intensity~100mW/cm2) it is used as light source, test
Obtain density of photocurrent-bias plot.GaN nanometers of base for post optoelectronic poles are in 1.0V on the Ti substrate that this technique is prepared
When vs.SCE bias, density of photocurrent is 10 mA/cm2, bias photoelectric conversion efficiency (ABPE) is 2.3%.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by described
The limitation of embodiment, it is made under other any spiritual essence and principles without departing from the utility model to change, modify, replacing
In generation, simplifies combination, should be equivalent substitute mode, is included within the protection scope of the utility model.
Claims (4)
1. the InGaN nano-pillar being grown on Ti substrate, which is characterized in that including Ti substrate (1), be grown on Ti substrate (1)
AlN buffer layer (2), the InGaN nano-pillar (3) being grown on AlN buffer layer (2).
2. the InGaN nano-pillar according to claim 1 being grown on Ti substrate, which is characterized in that the Ti substrate is
General T i metal.
3. the InGaN nano-pillar according to claim 1 being grown on Ti substrate, which is characterized in that the AlN buffer layer
With a thickness of 5 ~ 50 nm.
4. the InGaN nano-pillar according to claim 1 being grown on Ti substrate, which is characterized in that InGaN nanometers described
The height of column is 60 ~ 2000 nm, and diameter is 15 ~ 500 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821604602.8U CN209507579U (en) | 2018-09-29 | 2018-09-29 | The InGaN nano-pillar being grown on Ti substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821604602.8U CN209507579U (en) | 2018-09-29 | 2018-09-29 | The InGaN nano-pillar being grown on Ti substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209507579U true CN209507579U (en) | 2019-10-18 |
Family
ID=68191472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821604602.8U Active CN209507579U (en) | 2018-09-29 | 2018-09-29 | The InGaN nano-pillar being grown on Ti substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209507579U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114540875A (en) * | 2022-01-28 | 2022-05-27 | 华南理工大学 | InGaN/organic heterostructure-based photoelectrode material and preparation method and application thereof |
-
2018
- 2018-09-29 CN CN201821604602.8U patent/CN209507579U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114540875A (en) * | 2022-01-28 | 2022-05-27 | 华南理工大学 | InGaN/organic heterostructure-based photoelectrode material and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109132997A (en) | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Ti substrate | |
| CN109402653A (en) | InGaN nano-pillar@Au Nanocomposites structure and the preparation method and application thereof on a kind of Si substrate | |
| JP2008053731A (en) | Nano-wire in thin film silicon solar cell | |
| CN111074344B (en) | (In) GaN nano-column grown on GaAs substrate and preparation method and application thereof | |
| CN104617165A (en) | Molybdenum disulfide/buffering later/silicon n-i-p solar cell device and preparation method thereof | |
| JP2012234847A (en) | Crystal silicon based solar cell | |
| CN106711241A (en) | Graphene transparent electrode diamond-based ultraviolet detector and preparation method thereof | |
| WO2021104528A1 (en) | Solar-blind ultraviolet photoelectrochemical light detector and product thereof | |
| JP4949540B2 (en) | Solar cell and manufacturing method thereof | |
| Park et al. | A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure | |
| JP5307688B2 (en) | Crystalline silicon solar cell | |
| CN103594302A (en) | GaAs nanowire array photocathode and manufacturing method thereof | |
| CN109161850B (en) | (In) GaN nanotube growing on Si substrate and preparation method and application thereof | |
| CN114657641A (en) | Annealed Si-based InN nano-column heterojunction and preparation method and application thereof | |
| CN209507579U (en) | The InGaN nano-pillar being grown on Ti substrate | |
| Jeong et al. | Preparation of born-doped a-SiC: H thin films by ICP-CVD method and to the application of large-area heterojunction solar cells | |
| CN111036263B (en) | InGaN nanorod @ Ti-Ni nanoparticle composite structure on Si substrate and preparation method and application thereof | |
| CN206271710U (en) | Growth InN nano-pillar epitaxial wafers on a si substrate | |
| CN106898543A (en) | Al2O3The method and device of thin film passivation silica-based nanowire | |
| CN204118109U (en) | A kind of LED chip of NEW TYPE OF COMPOSITE transparency electrode | |
| CN114875493B (en) | InN-VIA group heterojunction on Si substrate and preparation method and application thereof | |
| CN209508387U (en) | A kind of (In) gaN nano tube grown on a si substrate | |
| CN100424892C (en) | Heterojunction pn diode based on silicon nanoline and producing method thereof | |
| Hsueh et al. | Si nanowire-based photovoltaic devices prepared at various temperatures | |
| CN110655035A (en) | Two-dimensional MXene functionalized InxGa1-xN nano column and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |