CN106206760A - Copper indium gallium selenide thin film solar cell with double-layer conductive film structure and preparation method - Google Patents
Copper indium gallium selenide thin film solar cell with double-layer conductive film structure and preparation method Download PDFInfo
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- CN106206760A CN106206760A CN201610832713.3A CN201610832713A CN106206760A CN 106206760 A CN106206760 A CN 106206760A CN 201610832713 A CN201610832713 A CN 201610832713A CN 106206760 A CN106206760 A CN 106206760A
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- 239000010409 thin film Substances 0.000 title claims abstract description 61
- 239000010408 film Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title abstract 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000011787 zinc oxide Substances 0.000 claims abstract description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 239000011669 selenium Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000005361 soda-lime glass Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 12
- 230000005611 electricity Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention discloses a copper indium gallium selenide thin-film solar cell with a double-layer conductive film structure and a preparation method thereof, wherein the preparation method comprises the following steps: step 1, manufacturing a back electrode on a substrate; the method specifically comprises the following steps: depositing Mo on the substrate material by a direct-current magnetron sputtering deposition system to serve as a back electrode, wherein the Mo is of a double-layer structure; step 2, preparing a copper indium gallium selenide film with the thickness of more than 2 microns on the back electrode by a method of co-evaporating four elements of copper, indium, gallium and selenium; step 3, preparing a buffer layer on the CIGS film by adopting a chemical water bath deposition method, wherein the buffer layer is a 50nm cadmium sulfide film; step 4, preparing an intrinsic zinc oxide film with the thickness of 50nm on the buffer layer by adopting a radio frequency magnetron sputtering method; step 5, preparing an aluminum-doped zinc oxide film and an indium tin oxide film on the intrinsic zinc oxide film in sequence by adopting a direct current magnetron sputtering method; and 6, preparing the silver upper electrode on the transparent conductive film by adopting a low-temperature screen printing process, wherein the preparation temperature is not higher than 100 ℃.
Description
Technical field
The present invention relates to CIGS thin-film solar cell preparing technical field, particularly relate to a kind of bilayer conductive film knot
The CIGS thin-film solar cell of structure and preparation method.Special needs to be pointed out is, this patent structure attempts to have two kinds
Each the transparent conductive membrane material of advantage combines, and makes battery have two-fold advantage, it is achieved preparation at room temperature, wherein
Two kinds of respective one-tenth-value thickness 1/10s of film are the emphasis of this patent.
Background technology
The maximum problem of 21 century facing mankind is not only have energy problem, also environmental problem, utilizes solar energy to solve
The most global energy and environmental problem are increasingly subject to people's attention, and various solar cells arise at the historic moment.At the energy day by day
Shortage causes in the crisis of global warming with excessively using fossil fuels, and solar energy power generating has become various countries and paid the utmost attention to
The clear energy sources of development.CIGS (CIGS) compound solar cell is because conversion efficiency is high, low light level power generation performance is good, stability
The advantage such as good, undamped and become one of most promising photovoltaic device.
The basic structure of CIGS thin-film solar cell is followed successively by from the bottom to top: backing material, back electrode, CIGS
Absorbed layer, cushion, high resistant zinc-oxide film, nesa coating (also referred to as Window layer), upper electrode.Relevant CIGS thin-film is too
The concrete structure in positive electricity pond, has had tens of Patents.With Application No. 201310755636.2 He
As a example by the proprietary material of 201310241287.2, the nesa coating used is Al-Doped ZnO (ZAO) thin film, this thin film material
The plurality of advantages such as material has that preparation temperature is low, light transmission and good conductivity, but Al-Doped ZnO film wet-hot aging performance and anti-purple
External irradiation poor performance, after placing a period of time in atmosphere, the decay of cell photoelectric conversion efficiency is substantially.With Application No.
As a example by the patent application material of 201510810201.2 and 200810204035.1, nesa coating uses another kind extensively should
Tin indium oxide (ITO) thin film, this thin film has good light transmission and electric conductivity equally, and wet-heat resisting and uvioresistant irradiation
Performance is good, use indium tin oxide films as the CIGS thin-film solar cell prepared by nesa coating the longest time
Between place, cell photoelectric conversion efficiency is without substantially decay.But having good light transmission and electric conductivity indium tin oxide films need to be
Preparing at a temperature of 200 DEG C, indium tin oxide films crystalline quality prepared by room temperature is poor, thus causes film conductivity poor, and impact is too
Sun battery performance.And 200 DEG C of preparation temperatures needed for preparing indium tin oxide films can to the made CIGS thin-film got ready too
Positive electricity pond cushion causes damage.
Summary of the invention
The technical problem to be solved in the present invention is: provide the CIGS thin-film solar cell of a kind of bilayer conductive membrane structure
And preparation method.The purpose of the CIGS thin-film solar cell preparation method of this bilayer conductive membrane structure is not damage thin film
On the basis of solar cell cushioning layer material, preparation has the nesa coating system of good wet-heat resisting and uvioresistant performance, thus
Realize the good preparation of CIGS thin-film solar cell.
The present invention solves that technical problem is adopted the technical scheme that present in known technology:
The CIGS thin-film solar cell preparation method of a kind of bilayer conductive membrane structure, at least comprises the steps:
Step 101, on substrate make back electrode；Particularly as follows:
By Mo that Deposited By Dc Magnetron Sputtering system deposit thickness on backing material is 500-700nm as back of the body electricity
Pole, wherein: Mo is double-decker, close to substrate for high resistant Mo layer, the thickness range of described high resistant Mo layer is 100-150nm,
On described high resistant Mo layer, redeposited thickness range is the low-resistance Mo layer of 400-550nm；
Step 102, on above-mentioned back electrode, utilize coevaporation copper, indium, gallium, that the method for four kinds of elements of selenium prepares thickness 2 is micro-
The CIGS thin-film that rice is above；
Step 103, on above-mentioned CIGS thin-film, use the method for chemical thought to prepare cushion, described slow
Rushing layer is cadmium sulphide membrane thick for 50nm；
Step 104, to use the method for rf magnetron sputtering to prepare intrinsic zinc oxide thick for 50nm on above-mentioned cushion thin
Film；
Step 105, on above-mentioned intrinsic zinc oxide thin film, use DC magnetron sputtering method to be sequentially prepared thickness range and be
The Al-Doped ZnO film of 120nm and thickness range are the indium tin oxide films of 260-320nm；
Step 106, on nesa coating, use low temperature silk-screen printing technique, the upper electrode of preparation silver, preparation temperature is the highest
In 100 DEG C, thus complete battery and prepare.
As preferably, the present invention additionally uses following additional technical feature:
Further: described substrate is the one in polyimide substrate, titanium foil substrate, calcium soda-lime glass.
Further: the thickness of described back electrode is 500nm；Wherein: the thickness of high resistant Mo layer is 100nm；Low-resistance Mo layer
Thickness be 400nm.
Further: the thickness of described back electrode is 700nm；Wherein: the thickness of high resistant Mo layer is 150nm；Low-resistance Mo layer
Thickness be 550nm.
Further: the preparation temperature in described step 106 is 99 DEG C.
Further: in the Al-Doped ZnO film of described step 105, aluminium element molar content is 2%.
Further: in the indium tin oxide films of described step 105, the molar percentage of indium and stannum is 9:1.
Sun electricity prepared by a kind of CIGS thin-film solar cell preparation method using above-mentioned bilayer conductive membrane structure
Pond.
The present invention has the advantage that with good effect:
The present invention is by being sequentially prepared double-deck Mo back electrode, CIGS thin-film, buffer layer thin film, height on backing material
On the basis of resistance zinc-oxide film, the method for magnetron sputtering is used to prepare 120nm thickness Al-Doped ZnO film, wherein aluminium element mole
Percentage composition is 2%, uses the method for magnetron sputtering to prepare the thick indium tin oxide films of 260-320nm the most again, wherein indium and
The molar percentage of stannum is 9:1, continues to use low temperature method for printing screen to prepare silver electrode in this double-layer transparent conductive film, complete
CIGS thin-film solar cell is become to prepare.
The double-layer transparent conductive film using the method to prepare has the electric conductivity suitable with single conducting film and light transmission
On the basis of, there is good wet-heat resisting and uvioresistant irradiation behaviour simultaneously, it is possible to achieve CIGS solar cell is at room temperature bar
Good preparation under part.
Accompanying drawing illustrates:
Fig. 1 is the knot of the CIGS thin-film solar cell of the bilayer conductive membrane structure that the preferred embodiment of the present invention is prepared
Structure schematic diagram.
Detailed description of the invention
For the summary of the invention of the present invention, feature and effect can be further appreciated that, hereby enumerate following example, and coordinate accompanying drawing
Describe in detail as follows:
Refer to Fig. 1, the CIGS thin-film solar cell preparation method of a kind of bilayer conductive membrane structure, including:
Step 1. makes back electrode on substrate
By Mo that Deposited By Dc Magnetron Sputtering system deposit thickness on backing material is 500-700nm as back of the body electricity
Pole, Mo is double-decker, close to substrate for high resistant Mo layer, thickness at 100-150nm, redeposited 400-on high resistant Mo layer
The low-resistance Mo layer of 550nm, as the back electrode of battery；
Step 2. utilizes coevaporation copper, indium, gallium, the method for four kinds of elements of selenium to prepare thickness more than 2 microns on back electrode
CIGS thin-film；
Step 3., on CIGS thin-film, uses the method for chemical thought to prepare cushion, for the sulfur that 50nm is thick
Cadmium thin film；
It is thin that step 4. uses the method for rf magnetron sputtering to prepare intrinsic zinc oxide (i-ZnO) thick for 50nm on the buffer layer
Film；
Step 5. on intrinsic zinc oxide thin film, use DC magnetron sputtering method be sequentially prepared 120nm thick mix alumina
Change zinc thin film and the indium tin oxide films of 260-320nm thickness；
Step 6., on nesa coating, uses low temperature silk-screen printing technique, and the upper electrode of preparation silver, preparation temperature is not higher than
100 DEG C, thus complete battery and prepare.
Embodiment 1:
Step 1. makes back electrode on a polyimide substrate
It is that the Mo of 500-700nm is as the back of the body by Deposited By Dc Magnetron Sputtering system deposit thickness on a polyimide substrate
Electrode, Mo is double-decker, close to substrate for high resistant Mo layer, thickness at 100-150nm, redeposited 400-on high resistant Mo layer
The low-resistance Mo layer of 550nm, as the back electrode of battery；
Step 2. utilizes coevaporation copper, indium, gallium, the method for four kinds of elements of selenium to prepare thickness more than 2 microns on back electrode
CIGS thin-film；
Step 3., on CIGS thin-film, uses the method for chemical thought to prepare cushion, for the sulfur that 50nm is thick
Cadmium thin film；
It is thin that step 4. uses the method for rf magnetron sputtering to prepare intrinsic zinc oxide (i-ZnO) thick for 50nm on the buffer layer
Film；
Step 5. on intrinsic zinc oxide thin film, use DC magnetron sputtering method be sequentially prepared 120nm thick mix alumina
Change zinc thin film and the indium tin oxide films of 260-320nm thickness；
Step 6., on nesa coating, uses low temperature silk-screen printing technique, and the upper electrode of preparation silver, preparation temperature is not higher than
100 DEG C, thus complete battery and prepare.
Embodiment 2:
Step 1. makes back electrode on titanium foil substrate (100 microns)
It is that the Mo of 500-700nm is as back electrode, Mo by Deposited By Dc Magnetron Sputtering system deposit thickness on titanium foil
For double-decker, close to substrate for high resistant Mo layer, thickness at 100-150nm, redeposited 400-550nm on high resistant Mo layer
Low-resistance Mo layer, as the back electrode of battery；
Step 2. utilizes coevaporation copper, indium, gallium, the method for four kinds of elements of selenium to prepare thickness more than 2 microns on back electrode
CIGS thin-film；
Step 3., on CIGS thin-film, uses the method for chemical thought to prepare cushion, for the sulfur that 50nm is thick
Cadmium thin film；
It is thin that step 4. uses the method for rf magnetron sputtering to prepare intrinsic zinc oxide (i-ZnO) thick for 50nm on the buffer layer
Film；
Step 5. on intrinsic zinc oxide thin film, use DC magnetron sputtering method be sequentially prepared 120nm thick mix alumina
Change zinc thin film and the indium tin oxide films of 260-320nm thickness；
Step 6., on nesa coating, uses low temperature silk-screen printing technique, and the upper electrode of preparation silver, preparation temperature is not higher than
100 DEG C, thus complete battery and prepare.
Embodiment 3:
Step 1. makes back electrode on calcium soda-lime glass
By Mo that Deposited By Dc Magnetron Sputtering system deposit thickness on calcium soda-lime glass is 500-700nm as back of the body electricity
Pole, Mo is double-decker, close to substrate for high resistant Mo layer, thickness at 100-150nm, redeposited 400-on high resistant Mo layer
The low-resistance Mo layer of 550nm, as the back electrode of battery；
Step 2. utilizes coevaporation copper, indium, gallium, the method for four kinds of elements of selenium to prepare thickness more than 2 microns on back electrode
CIGS thin-film；
Step 3., on CIGS thin-film, uses the method for chemical thought to prepare cushion, for the sulfur that 50nm is thick
Cadmium thin film；
It is thin that step 4. uses the method for rf magnetron sputtering to prepare intrinsic zinc oxide (i-ZnO) thick for 50nm on the buffer layer
Film；
Step 5. on intrinsic zinc oxide thin film, use DC magnetron sputtering method be sequentially prepared 120nm thick mix alumina
Change zinc thin film and the indium tin oxide films of 260-320nm thickness；
Step 6., on nesa coating, uses low temperature silk-screen printing technique, and the upper electrode of preparation silver, preparation temperature is not higher than
100 DEG C, thus complete battery and prepare.
A kind of CIGS thin-film solar cell system of the bilayer conductive membrane structure used disclosed in above three embodiment
Solar cell prepared by Preparation Method.
Above embodiments of the invention are described in detail, but described content have been only presently preferred embodiments of the present invention,
It is not to be regarded as the practical range for limiting the present invention.All impartial changes made according to the present patent application scope and improvement etc.,
Within all should still belonging to the patent covering scope of the present invention.
Claims (8)
1. the CIGS thin-film solar cell preparation method of a bilayer conductive membrane structure, it is characterised in that: at least include as
Lower step:
Step 101, on substrate make back electrode；Particularly as follows:
By Deposited By Dc Magnetron Sputtering system deposit thickness on backing material be the Mo of 500-700nm as back electrode, its
In: Mo is double-decker, close to substrate for high resistant Mo layer, the thickness range of described high resistant Mo layer is 100-150nm, described
On high resistant Mo layer, redeposited thickness range is the low-resistance Mo layer of 400-550nm；
Step 102, utilize on above-mentioned back electrode coevaporation copper, indium, gallium, the method for four kinds of elements of selenium prepare thickness 2 microns with
On CIGS thin-film；
Step 103, on above-mentioned CIGS thin-film, use chemical thought method prepare cushion, described cushion
For the cadmium sulphide membrane that 50nm is thick；
Step 104, the method for rf magnetron sputtering is used to prepare the thick intrinsic zinc oxide thin film of 50nm on above-mentioned cushion；
Step 105, on above-mentioned intrinsic zinc oxide thin film, use DC magnetron sputtering method to be sequentially prepared thickness range and be
The Al-Doped ZnO film of 120nm and thickness range are the indium tin oxide films of 260-320nm；
Step 106, on nesa coating, use low temperature silk-screen printing technique, the upper electrode of preparation silver, preparation temperature is not higher than
100 DEG C, thus complete battery and prepare.
The most according to claim 1, the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure, its feature exists
In: described substrate is the one in polyimide substrate, titanium foil substrate, calcium soda-lime glass.
The most according to claim 1, the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure, its feature exists
In: the thickness of described back electrode is 500nm；Wherein: the thickness of high resistant Mo layer is 100nm；The thickness of low-resistance Mo layer is 400nm.
The most according to claim 1, the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure, its feature exists
In: the thickness of described back electrode is 700nm；Wherein: the thickness of high resistant Mo layer is 150nm；The thickness of low-resistance Mo layer is 550nm.
5. according to the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure described in any one of claim 1-4,
It is characterized in that: the preparation temperature in described step 106 is 99 DEG C.
The most according to claim 5, the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure, its feature exists
In: in the Al-Doped ZnO film of described step 105, aluminium element molar content is 2%.
The most according to claim 5, the CIGS thin-film solar cell preparation method of bilayer conductive membrane structure, its feature exists
In: in the indium tin oxide films of described step 105, the molar percentage of indium and stannum is 9:1.
8. the CIGS thin-film solar cell preparation method requiring bilayer conductive membrane structure described in any one of 1-7 according to profit
The solar cell of preparation.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110226320A1 (en) * | 2010-03-18 | 2011-09-22 | Patrick Little | Solar cell having a transparent conductive oxide contact layer with an oxygen gradient |
| CN102945893A (en) * | 2012-11-28 | 2013-02-27 | 中国电子科技集团公司第十八研究所 | Method for preparing double-knot thin film solar cell through I-III-VI group materials |
| CN204966512U (en) * | 2015-09-10 | 2016-01-13 | 研创应用材料（赣州）股份有限公司 | Double -deck TCO's CIGS solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110226320A1 (en) * | 2010-03-18 | 2011-09-22 | Patrick Little | Solar cell having a transparent conductive oxide contact layer with an oxygen gradient |
| CN102945893A (en) * | 2012-11-28 | 2013-02-27 | 中国电子科技集团公司第十八研究所 | Method for preparing double-knot thin film solar cell through I-III-VI group materials |
| CN204966512U (en) * | 2015-09-10 | 2016-01-13 | 研创应用材料（赣州）股份有限公司 | Double -deck TCO's CIGS solar cell |
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