CN106206725B - The horizontal DMOS device of radio frequency and production method - Google Patents
The horizontal DMOS device of radio frequency and production method Download PDFInfo
- Publication number
- CN106206725B CN106206725B CN201510233189.3A CN201510233189A CN106206725B CN 106206725 B CN106206725 B CN 106206725B CN 201510233189 A CN201510233189 A CN 201510233189A CN 106206725 B CN106206725 B CN 106206725B
- Authority
- CN
- China
- Prior art keywords
- area
- active area
- alignment slot
- sinker
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses horizontal DMOS devices of a kind of radio frequency and preparation method thereof, the present invention is before the injection of sinking layer, increase step slot etching technics, so that forming an alignment slot, it is aligned and uses as subsequent layers photoetching level, present invention saves zero layer lithographic procedures, cost is saved, and is also had no effect to device performance.
Description
Technical field
The present invention relates to semiconductor chip manufacturing fields, are more particularly to the horizontal double-diffused metal oxide semiconductor of radio frequency
Device and preparation method thereof.
Background technique
The horizontal double-diffused metal oxide semiconductor of radio frequency (RF LDMOS) be widely used in cellular base station, radio and television and
The fields such as radar.The technique of RF LDMOS generally comprises sinking layer, polysilicon, body region layer, source-drain layer, implanted layer etc..RF
The working principle of LDMOS device is that sinker area is connect by injection region with source region, and injection region and source region can pass through the gold of contact hole again
Belong to and being shorted.After channel under polysilicon is formed, electric current can flow to source region from drain region, then be flowed to by the metal of contact hole
Then injection region flows to the source at the back side by sinker area.
Traditional production method typically first defines zero layer in the position in dicing lane area with photoetching process, then with
Photoresist makees mask, forms a silicon slot by silicon etching, the difference of height of this silicon slot is exactly an alignment mark, subsequent sinking
The levels such as layer can do lithography alignment using this label.
Fig. 1 is the sectional view of device in traditional handicraft.Therefrom it can be seen that, the dicing lane area except device active region,
The silicon slot step for thering is a zero layer to be formed.This step can do lithography alignment use to subsequent each layer.Conventional method it is excellent
Point is simple process, but needs individual one layer of lithography layer zero layer, and zero layer itself is not required layer in device architecture
Secondary, it is only to provide an alignment mark, therefore causes higher cost.
Summary of the invention
(1) technical problems to be solved
The technical problem to be solved by the present invention is to save zero layer photoetching journey how while guaranteeing power device performance
Sequence saves cost.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides a kind of horizontal double-diffused metal oxide semiconductor devices of radio frequency
Part, the device include:
Substrate；
Epitaxial layer, the epitaxial layer are located on the substrate, are arranged active area in the epitaxial layer, in the active area
Including sinker area and alignment slot, the alignment slot is located at the upper surface of the active area, and the sinker area is located at the alignment slot
Lower part, and contacted with trench bottom and the substrate of being aligned；The active area further includes injection region, under the injection region
Portion extends into the sinker area and partially contacts the bottom of the alignment slot；
Gate oxide is covered in the active area upper surface, the bottom of alignment slot and the side wall of alignment slot；
Polysilicon is located at the gate oxide upper surface, and body area and the gate oxide corresponding to the active area
The position of contact；
Field oxide is contacted positioned at the two sides of the active area, and with the epitaxial layer.
Preferably, the height of the alignment slot is between 500~1000 angstroms.
The invention also discloses a kind of production method of the horizontal DMOS device of radio frequency, the side
Method the following steps are included:
S1, epitaxial layer is prepared on substrate, and form alignment slot and sinker area in the predeterminable area of the epitaxial layer, it is described
Alignment slot is located at the upper surface of the epitaxial layer, and the sinker area is located at the lower part of the alignment slot, and with the alignment slot with
And substrate contacts；
S2, active area is defined using the alignment slot as alignment mark, in the upper table of the epitaxial layer of the two sides of the active area
Face forms field oxide；
S3, continuous gate oxide is formed in the upper surface of the active area and the bottom and side wall of the alignment slot,
And polysilicon is formed on the gate oxide；
S4, body area, source region, drain region, drift region and injection region, the lower part of the injection region are formed in the active area
It extends into the sinker area and partially contacts the bottom of the alignment slot.
Preferably, in the step S1, form the alignment slot and sinker area specifically includes the following steps:
S11, sinker area is defined in the epitaxial layer, and etch the alignment slot in the upper surface of the sinker area；
S12, ion is injected in the sinker area, and carries out ion and drives in.
Preferably, the sinker area is defined by photolithography plate, and after injecting ion, ion remove light before driving in
Resistance.
Preferably, the alignment slot is etched using dry etching, etch thicknesses are between 500~1000 angstroms.
Preferably, the step S2 specifically:
S21, continuous pad oxide is formed in the upper surface of the epitaxial layer, the bottom and side wall of the alignment slot,
Thickness is between 200~500 angstroms；
S22, continuous silicon nitride is formed in the upper surface of the pad oxide, thickness is between 1500~3000 angstroms；
S23, the active area is defined by photolithography plate, and etches the silicon nitride of the active area two sides, exposing pair
The pad oxide of position is answered, removal defines the photoresist that the active area uses later；
S24, the region for exposing the pad oxide in the step S23 form field oxide, thickness 5000~
Between 30000 angstroms, the pad oxide and silicon nitride of the active area upper surface are removed later, exposes table on the active area
The upper surface of face and sinker area.
Preferably, the step S4 specifically:
S41, in the active area definition body area, and inject ion, carry out ion later and drive in；
S42, in the active area definition source region, drain region and drift region, and carry out ion implanting respectively；
S43, in the active area definition injection region, and carry out ion implanting.
Preferably, in the step S43, the energy for carrying out ion implanting is 70~100kev, and dosage is in 1E15~1E16
Between every square centimeter.
Preferably, the doping concentration of the injection region is greater than the doping concentration of the sinker area, the doping of the sinker area
Concentration is greater than the doping concentration in the body area, and the doping concentration in the body area is greater than the dopant concentration of the epitaxial layer.
(3) beneficial effect
The present invention provides horizontal DMOS device of a kind of radio frequency and preparation method thereof, the present invention
Before sinking layer ion implanting, increase step slot etching technics, so that an alignment slot is formed, as subsequent layers lithography layer
Secondary alignment uses, and present invention saves zero layer lithographic procedures, saves cost, and also have no effect to device performance.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings
Fig. 1 is the structural schematic diagram of the horizontal DMOS device of radio frequency in the prior art；
Fig. 2 is a kind of flow chart of the horizontal DMOS device production method of radio frequency of the invention；
Fig. 3 is the device architecture schematic diagram after defining sinker area in the present invention；
Fig. 4 is that the device architecture schematic diagram after alignment slot is formed in the present invention；
Fig. 5 is to form sinker area in the present invention and remove the device architecture schematic diagram after photoresist；
Fig. 6 is the device architecture schematic diagram after defining active area in the present invention；
Fig. 7 is the device architecture schematic diagram after the silicon nitride for forming etching active area two sides in the present invention；
Fig. 8 is that the device architecture schematic diagram after field oxide is formed in the present invention；
Fig. 9 is that the device architecture schematic diagram after gate oxide and polysilicon is formed in the present invention；
Figure 10 is that the device architecture schematic diagram behind body area is formed in the present invention；
Figure 11 is that the device architecture schematic diagram behind source region, drain region and drift region is formed in the present invention；
Figure 12 is that the device architecture schematic diagram behind injection region is formed in the present invention.
Specific embodiment
Present invention is further described in detail with reference to the accompanying drawings and examples.Following embodiment is for illustrating this hair
It is bright, but cannot be used to limit the scope of the invention.
Fig. 1 is the structural schematic diagram of the horizontal DMOS device of radio frequency in the prior art, Cong Tuzhong
It can be seen that device includes substrate 1, epitaxial layer 2, field oxide 3, gate oxide 4, body area 5, polysilicon 6, injection region 7, source region
8, drift region 9, drain region 10 and sinker area 11.Sinker area 11 is connect by injection region 7 with source region 8, injection region 7 and the meeting again of source region 8
It is shorted by the metal of contact hole.After channel under polysilicon is formed, electric current can flow to source region 8 from drain region 10, then lead to
The metal for crossing contact hole flows to injection region 7, the source at the back side is then flowed to by sinker area 11, it will be noted from fig. 1 that in device
Dicing lane area except part area, the silicon slot step 15 for having a zero layer to be formed, this step can do photoetching to subsequent each layer
Alignment uses.The advantages of conventional method is simple process, but higher cost, needs individual one layer of lithography layer zero layer, zero layer
It itself is not required level in device architecture, it is only to provide an alignment mark.
In view of the above technical problems, the present invention provides a kind of horizontal DMOS device of radio frequency,
The device includes: substrate 1；Epitaxial layer 2, the epitaxial layer 2 are located on the substrate 1, are arranged in the epitaxial layer 2 active
Area includes sinker area 11 and alignment slot 16 in the active area, and the alignment slot 16 is located at the upper surface of the active area, described
Sinker area 11 is located at the lower part of the alignment slot 16, and contacts with the alignment slot 16 and substrate 1；The active area also wraps
Injection region 7 is included, the lower part of the injection region 7 extends into the sinker area 11 and partially contacts the bottom of the alignment slot 16；Grid
Oxide layer 4 is covered in the active area upper surface, the bottom of alignment slot and the side wall of alignment slot；Polysilicon 6 is located at the grid
4 upper surface of oxide layer, and the position that the body area 5 for corresponding to the active area is contacted with the gate oxide 4；Field oxide 3, position
It is contacted in the two sides of the active area, and with the epitaxial layer 2.
Further, the height of the alignment slot 16 is between 500~1000 angstroms.
The invention also discloses a kind of production method of the horizontal DMOS device of radio frequency, the side
Method the following steps are included:
S1, epitaxial layer 2 is prepared on substrate 1, and form alignment slot 16 and sinker area in the predeterminable area of the epitaxial layer 2
11, the alignment slot 16 is located at the upper surface of the epitaxial layer 2, and the sinker area 11 is located at the lower part of the alignment slot 16, and
It is contacted with the alignment slot 16 and substrate 1；
S2, with the alignment slot 16 be alignment mark define active area, the two sides of the active area epitaxial layer it is upper
Surface forms field oxide 3；
S3, continuous gate oxide 4 is formed in the upper surface of the active area and the bottom and side wall of the alignment slot,
And polysilicon 6 is formed on the gate oxide 4, as shown in Figure 9；
Further, pass through lithographic definition and etch and form the polysilicon 6；
S4, body area 5, source region 8, drain region 10, drift region 9 and injection region 7, the injection region are formed in the active area
7 lower part extends into the sinker area 11 and partially contacts the bottom of the alignment slot 16.
Further, in the step S1, form the alignment slot 16 and sinker area 11 specifically includes the following steps:
S11, sinker area 11 is defined in the epitaxial layer 2, and etch the alignment in the upper surface of the sinker area 11
Slot, as shown in Figure 4；
The sinker area 11 is defined by photolithography plate, as shown in Figure 3；
Dry etching is used to the etching of the alignment slot, for etch thicknesses between 500~1000 angstroms, etching gas is chlorine
Gas and hydrogen bromide, flow are 40~60 ml/mins and 30~50 ml/mins respectively, 300~500 watts of power, chamber pressure
The purpose of 80 millitorrs, this step is the alignment step to form subsequent photoetching, step of this step instead of zero layer in traditional handicraft；
S12, ion is injected in the sinker area 11, and carries out ion and drives in.And after injecting ion, ion drive in it
Preceding removal photoresist 14, as shown in Figure 5.
11 ion implanting of sinker area, injection ion is boron ion, between 100~200Kev of energy, dosage 1E15~1E16
It is every square centimeter, dual-purpose is then removed or both come removing photoresistance 14 with wet processing, dry process, and wherein wet processing is exactly sulfuric acid
With the mixed solution of hydrogen peroxide, dry process is exactly to be bombarded using oxonium ion；It carries out 11 ion of sinker area later to drive in, until inciting somebody to action
11 ion of sinker area and the substrate of heavy doping come into full contact with, wherein driving between 1100~1200 degree of temperature, the time 2~6 hours
Between.
Further, the step S2 specifically:
S21, continuous pad oxide 12 is formed in the upper surface of the epitaxial layer 2, the side wall of the alignment slot and bottom,
Its thickness is between 200~500 angstroms；
S22, form continuous silicon nitride 13 in the upper surface of the pad oxide 12, thickness 1500~3000 angstroms it
Between；
S23, using the alignment slot as alignment mark, the active area is defined by photolithography plate, as shown in fig. 6, and etching
The silicon nitride 13 of the active area two sides exposes the pad oxide 12 of corresponding position, has described in removal definition later
The photoresist 14 that source region uses, as shown in Figure 7；
S24, the region for exposing the pad oxide in the step S23 form field oxide 3, thickness 5000~
Between 30000 angstroms, the pad oxide 12 and silicon nitride 13 of the active area upper surface are removed later, exposes the active area
The upper surface of upper surface and sinker area 11, as shown in Figure 8.
Further, field oxide field oxygen is grown using wet oxidation, uses 170 degree of temperature later, concentration 85%
Concentrated phosphoric acid remove silicon nitride 13, strip pad oxide 12 with hydrofluoric acid.
Further, the step S4 specifically:
S41, in the active area definition body area 5, and inject ion, carry out ion later and drive in, as shown in Figure 10；
S42, in the active area definition source region 8, drain region 10 and drift region 9, and carry out ion implanting, such as Figure 11 respectively
It is shown；
S43, in the active area definition injection region 7, and carry out ion implanting, as shown in figure 12；
Further, due to having silicon slot in sinker area 11, so the ion of sinker area must can just be kept away than alignment slot depth
Exempt from silicon slot to separate injection region.For this reason that Implantation Energy is more slightly larger than traditional handicraft, energy is 70~100kev,
Between dosage 1E15~1E16 is every square centimeter, injection ion is boron or boron difluoride.In traditional handicraft, energy is only 40~
Between 70kev.
Further, the doping concentration of the injection region 7 is greater than the doping concentration of the sinker area 11, the sinker area 11
Doping concentration be greater than the doping concentration in the body area 5, it is dense that the doping concentration in the body area 5 is greater than mixing for the epitaxial layer 2
Degree.
Technique after the step S4, such as aperture layer formed, surface metal line and back gold process, with traditional handicraft phase
Together, no longer narration in detail herein.
Device of the invention is if N-type device, then substrate 1 is P type substrate, and epitaxial layer 2 is p-type epitaxial layer, and body area 5 is P
The area Xing Ti, injection region 7 are p-type injection region, and source region 8 is N-type source region, and drift region 9 is N-type drift region, and drain region 10 is N-type drain region,
Sinker area 11 is p-type sinker area；For device of the invention if P-type device, substrate 1 is P type substrate, then epitaxial layer 2 is p-type extension
Layer, body area 5 are the area NXing Ti, and injection region 7 is p-type injection region, and source region 8 is p-type source region, and drift region 9 is P drift area, drain region 10
For p-type drain region, sinker area 11 is p-type sinker area.
The invention discloses production method, silicon slot step is formed using the sinking layer in traditional handicraft, for subsequent each
Photoetching level does lithography alignment use, and implementation method is to increase by a step silicon slot after the definition of sinking layer, before ion implanting and carve
Etching technique is aligned as subsequent layers photoetching level and uses so that forming a silicon slot.Present invention saves zero layer photoetching journeys
Sequence saves cost, and also has no effect to device.
The above embodiments are only used to illustrate the present invention, rather than limitation of the present invention.Although referring to embodiment to this hair
It is bright to be described in detail, those skilled in the art should understand that, to technical solution of the present invention carry out it is various combination,
Modification or equivalent replacement should all cover and want in right of the invention without departure from the spirit and scope of technical solution of the present invention
It asks in range.
Claims (10)
1. a kind of horizontal DMOS device of radio frequency, which is characterized in that the device includes:
Substrate；
Epitaxial layer, the epitaxial layer are located on the substrate, active area are arranged in the epitaxial layer, includes in the active area
Sinker area and alignment slot, the alignment slot are located at the upper surface of the active area, and the sinker area is located under the alignment slot
Portion, and contacted with trench bottom and the substrate of being aligned；The active area further includes injection region, and the lower part of the injection region is prolonged
It protrudes into the sinker area and partially contacts the bottom of the alignment slot；
Gate oxide is covered in the active area upper surface, the bottom of alignment slot and the side wall of alignment slot；
Polysilicon is located at the gate oxide upper surface, and the body area for corresponding to the active area is contacted with the gate oxide
Position；
Field oxide is contacted positioned at the two sides of the active area, and with the epitaxial layer.
2. device according to claim 1, which is characterized in that the height of the alignment slot is between 500~1000 angstroms.
3. a kind of production method of the horizontal DMOS device of radio frequency, which is characterized in that the method packet
Include following steps:
S1, epitaxial layer is prepared on substrate, and form alignment slot and sinker area, the alignment in the predeterminable area of the epitaxial layer
For slot position in the upper surface of the epitaxial layer, the sinker area is located at the lower part of the alignment slot, and with the alignment slot and lining
Bottom contacts；
S2, active area is defined using the alignment slot as alignment mark, in the upper surface shape of the epitaxial layer of the two sides of the active area
At field oxide；
S3, continuous gate oxide is formed in the upper surface, the bottom of the alignment slot and the side wall of alignment slot of the active area,
And polysilicon is formed on the gate oxide；
S4, body area, source region, drain region, drift region and injection region are formed in the active area, the lower part of the injection region extends
Enter the sinker area and partially contacts the bottom of the alignment slot.
4. according to the method described in claim 3, it is characterized in that, forming the alignment slot and sinker area in the step S1
Specifically includes the following steps:
S11, sinker area is defined in the epitaxial layer, and etch the alignment slot in the upper surface of the sinker area；
S12, ion is injected in the sinker area, and carries out ion and drives in.
5. according to the method described in claim 4, it is characterized in that, define the sinker area by photolithography plate, and injection from
After son, ion drive in front of remove photoresist.
6. according to the method described in claim 5, it is characterized in that, etching the alignment slot, etch thicknesses using dry etching
Between 500~1000 angstroms.
7. according to the method described in claim 6, it is characterized in that, the step S2 specifically:
S21, continuous pad oxide, thickness are formed in the upper surface of the epitaxial layer, the bottom and side wall of the alignment slot
Between 200~500 angstroms；
S22, continuous silicon nitride is formed in the upper surface of the pad oxide, thickness is between 1500~3000 angstroms；
S23, the active area is defined by photolithography plate, and etches the silicon nitride of the active area two sides, expose corresponding position
The pad oxide set, removal defines the photoresist that the active area uses later；
S24, the region for exposing the pad oxide in the step S23 form field oxide, and thickness is 5000~30000
Between angstrom, remove the pad oxide and silicon nitride of the active area upper surface later, expose the active area upper surface with
And the upper surface of sinker area.
8. the method according to the description of claim 7 is characterized in that the step S4 specifically:
S41, in the active area definition body area, and inject ion, carry out ion later and drive in；
S42, in the active area definition source region, drain region and drift region, and carry out ion implanting respectively；
S43, in the active area definition injection region, and carry out ion implanting.
9. according to the method described in claim 8, it is characterized in that, the energy for carrying out ion implanting is 70 in the step S43
~100kev, dosage is between 1E15~1E16 is every square centimeter.
10. according to the method described in claim 9, it is characterized in that, the doping concentration of the injection region is greater than the sinker area
Doping concentration, the doping concentration of the sinker area is greater than the doping concentration in the body area, and the doping concentration in the body area is greater than
The dopant concentration of the epitaxial layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510233189.3A CN106206725B (en) | 2015-05-08 | 2015-05-08 | The horizontal DMOS device of radio frequency and production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510233189.3A CN106206725B (en) | 2015-05-08 | 2015-05-08 | The horizontal DMOS device of radio frequency and production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206725A CN106206725A (en) | 2016-12-07 |
| CN106206725B true CN106206725B (en) | 2019-04-30 |
Family
ID=57459944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510233189.3A Active CN106206725B (en) | 2015-05-08 | 2015-05-08 | The horizontal DMOS device of radio frequency and production method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206725B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211852A (en) * | 2006-12-26 | 2008-07-02 | 东部高科股份有限公司 | High voltage CMOS device and method of fabricating the same |
| CN104241381A (en) * | 2014-09-10 | 2014-12-24 | 上海联星电子有限公司 | Radio frequency LDMOS device and preparing method thereof |
-
2015
- 2015-05-08 CN CN201510233189.3A patent/CN106206725B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101211852A (en) * | 2006-12-26 | 2008-07-02 | 东部高科股份有限公司 | High voltage CMOS device and method of fabricating the same |
| CN104241381A (en) * | 2014-09-10 | 2014-12-24 | 上海联星电子有限公司 | Radio frequency LDMOS device and preparing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206725A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7595241B2 (en) | Method for fabricating silicon carbide vertical MOSFET devices | |
| JP5601848B2 (en) | Method for manufacturing SiC semiconductor device | |
| CN104733531A (en) | Dual oxide trench gate power mosfet using oxide filled trench | |
| JP6871562B2 (en) | Silicon carbide semiconductor device and its manufacturing method | |
| CN105826360A (en) | Trench-type semi super junction power device and manufacturing method thereof | |
| CN103000533B (en) | The manufacture method of autoregistration super junction power transistor | |
| KR20090028917A (en) | Semiconductor device and method for fabricating the same | |
| CN111883430B (en) | Semiconductor device manufacturing method | |
| JP2020136416A (en) | Semiconductor device and semiconductor device manufacturing method | |
| KR101530579B1 (en) | Semiconductor device and method for manufacturing the same | |
| CN109216276A (en) | A kind of metal-oxide-semiconductor and its manufacturing method | |
| KR100902585B1 (en) | Trench gate mosfet and method for fabricating of the same | |
| KR20190090270A (en) | Semiconductor device and method of manufacturing the same | |
| US8741709B2 (en) | Vertical power MOSFET and IGBT fabrication process with two fewer photomasks | |
| CN106206725B (en) | The horizontal DMOS device of radio frequency and production method | |
| JP2010141339A (en) | Method for manufacturing semiconductor device | |
| CN210866185U (en) | Semiconductor terminal structure and semiconductor structure | |
| CN106206724B (en) | A kind of horizontal double diffusion oxide semiconductor element of high frequency and preparation method thereof | |
| CN108054210B (en) | Groove type vertical double-diffusion metal oxide transistor and manufacturing method thereof | |
| CN105336612A (en) | Planar VDMOS device and manufacturing method thereof | |
| CN112713186A (en) | Semiconductor terminal structure and preparation method thereof | |
| KR100660342B1 (en) | A transistor and a method for manufacturing the same | |
| CN210607262U (en) | High-performance groove type insulated gate bipolar transistor device | |
| CN209843715U (en) | Power device for improving UIS through connecting hole | |
| CN104253045A (en) | VDMOS (Vertical Double-Diffused Metal-Oxide-Semiconductor) device and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220721 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, fangzheng building, 298 Fu Cheng Road, Beijing, Haidian District Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right |