CN106202970B - A kind of failure rate appraisal procedure of MMC - Google Patents
A kind of failure rate appraisal procedure of MMC Download PDFInfo
- Publication number
- CN106202970B CN106202970B CN201610619580.1A CN201610619580A CN106202970B CN 106202970 B CN106202970 B CN 106202970B CN 201610619580 A CN201610619580 A CN 201610619580A CN 106202970 B CN106202970 B CN 106202970B
- Authority
- CN
- China
- Prior art keywords
- failure rate
- mmc
- submodule
- circuits
- failure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
- G16Z99/00—Subject matter not provided for in other main groups of this subclass
Landscapes
- Inverter Devices (AREA)
Abstract
The invention discloses the failure rate appraisal procedures of MMC a kind of, include the following steps：1）Obtain the submodule and sub-module assemblies of MMC circuits；2）MMC circuits and its running parameter of sub-module assemblies are inputted, primary condition setting is completed；3）According to the failure rate of fault model computational submodule component, the failure rate of submodule is obtained；4）The Markov model for establishing MMC circuits establishes state transition equation based on Markov model；5）Solving state equation of transfer, obtain the failure rates of MMC circuits at any time with the variation function of number of modules, reliability at any time with the variation function and mean time to failure, MTTF of number of modules.The calculating reliability of the failure rate of sub-module assemblies is greatly improved, the computed reliability of the failure rate of MMC circuits is improved；By the utilization of Markov model, keeps the failure rate for the MMC circuits that solution obtains and average life span more acurrate and change over time and change, have dynamic, assessment of failure precision high.
Description
Technical field
The present invention relates to a kind of failure rate appraisal procedures to belong to electricity more particularly to the failure rate appraisal procedure of MMC a kind of
Force system reliability assessment field.
Background technology
Modular multilevel converter (Modular Multilevel Converter, MMC) was learned from 2002 by Germany
After the propositions such as person R.Marquardt, because it is in the unique advantage of high-power application aspect, the wide of scholars has been obtained
General concern and research are concentrated mainly on the fields such as D.C. high voltage transmission HVDC, power quality controlling and AC Drive, especially high
Press the primary selection of Converter.
There are multiple submodule, the reliability of submodule to leverage MMC entirety in Modular multilevel converter MMC
Reliability, sub-module fault can impact the normal operation of MMC converters, thus research MMC failure rate be it is necessary to
's.
All it is to set specific sub-module fault rate as λ in traditional failure rate appraisal proceduresm=λI 2λD 2λC, and
The failure rate of MMC is P=6n λsm, wherein λIIt is the failure rate of IGBT (insulated gate bipolar transistor), λDIt is diode event
Barrier rate, λCIt is the failure rate of capacitance, n is the submodule quantity of each bridge arm.
In traditional failure rate appraisal procedure, the failure rate of component is not calculated using fault model, so obtained son
Module failure rate is insecure；Moreover, also do not use model to solve the failure rate of MMC circuits, cause to be calculated
MMC failure rate precision is relatively low.
Invention content
It is a primary object of the present invention to overcome deficiency in the prior art, provide a kind of failure rate assessment side of MMC
Method solves conventional failure rate appraisal procedure and is not sufficiently reacted the reliability of MMC circuits under different time, and MMC can be improved
The estimated accuracy of fault rate and average life span.
In order to achieve the above object, the technical solution adopted in the present invention is：
A kind of failure rate appraisal procedure of MMC, includes the following steps：
1) submodule and sub-module assemblies of MMC circuits are obtained；
2) MMC circuits and its running parameter of sub-module assemblies are inputted, primary condition setting is completed；
3) according to the failure rate of fault model computational submodule component, the failure rate of submodule is obtained；
4) Markov model for establishing MMC circuits establishes state transition equation based on Markov model；
5) solving state equation of transfer, obtain the failure rates of MMC circuits at any time with the variation function of number of modules, reliability
At any time with the variation function and mean time to failure, MTTF of number of modules.
The present invention is further arranged to：The sub-module assemblies include IGBT, capacitance and diode.
The present invention is further arranged to：The failure rate according to fault model computational submodule component in the step 3),
Including,
According to the fault model of IGBT, the failure rate λ of IGBT is calculatedI=λb·πT·πA·πQ·πE；
According to the fault model of capacitance, the failure rate λ of capacitance is calculatedC=λb·πCV·πQ·πE；
According to the fault model of diode, the failure rate λ of diode is calculatedD=λb·πT·πS·πCπQπE；
Wherein, λbFor basic failure rate, πTFor temperature factor, πAFor application factor, πQFor qualitative factor, πSFor electric stress because
Element, πCFor structure contact factor, πCVFor capacitance factor, πEFor environmental factor.
The present invention is further arranged to：The failure rate of submodule in the step 3) is denoted as λsm, when submodule is using half
The structure of bridge submodule, then the failure rate of half-bridge submodule is λsm=2 λI+2λD+λC。
The present invention is further arranged to：The parameter of the MMC circuits and its sub-module assemblies includes the electronics device of MMC circuits
Submodule group under the type and inactive pattern of part junction temperature, power, rated current and rated direct voltage and sub-module assemblies
Part failure rate is equal to zero.
The present invention is further arranged to：State transition equation in the step 4) is
Wherein, λ=6n λsm, λ is the failure rate of MMC circuits, and μ is the return rate of MMC circuits, P0It is in just for MMC circuits
The probability of normal working condition, P1For the probability that any submodule on any bridge arm of MMC circuits breaks down, t is time, n
For the submodule quantity of each bridge arm of MMC circuits, λsmFor the failure rate of submodule.
The present invention is further arranged to：Solving state equation of transfer in the step 5), including,
If return rate μ=0 of MMC circuits, that is, require the submodule to break down is modulated in maintenance to change into normally；
Then by solving state equation of transfer, obtain,
The probability that MMC circuits are in normal operating conditions is at any time P with the variation function of number of modules0(t)；
And then obtain,
The failure rate of MMC circuits is at any time P with the variation function of number of modules1(t)=1-P0(t),
Reliability is at any time R (t)=P with the variation function of number of modules0(t),
Mean time to failure, MTTF is
Compared with prior art, the invention has the advantages that：
By the condition setting to MMC circuits and its parameter of sub-module assemblies, submodule group is obtained according to fault model
The failure rate of part to establish Markov model, and then establishes state transition equation based on Markov model, and by asking
State transition equation is solved to obtain the failure rate, reliability and average mistake of the MMC circuits changed over time under disparate modules number
Imitate the parameters such as time；The calculating reliability of the failure rate of sub-module assemblies is not only greatly improved, but also improves the failure of MMC circuits
The computed reliability of rate；Even more by the utilization of Markov model, make the failure rate for the MMC circuits that solution obtains and average longevity
Life is more accurate and changes over time and changes, and has dynamic, improves Fault Estimation precision.
The above is only the general introduction of technical solution of the present invention, in order to be better understood upon the technological means of the present invention, under
In conjunction with attached drawing, the invention will be further described in face.
Description of the drawings
Fig. 1 is a kind of flow chart of the failure rate appraisal procedure of MMC of the present invention；
Fig. 2 is the MMC circuit topology figures that the present invention uses；
Fig. 3 is the state diagram for the Markov model that the present invention establishes；
Fig. 4 be after solving state equation of transfer of the present invention the reliability established at any time with the variation diagram of number of modules.
Specific implementation mode
With reference to the accompanying drawings of the specification, the present invention is further illustrated.
The present invention provides a kind of failure rate appraisal procedure of MMC, as shown in Figure 1, including the following steps：
1) submodule and sub-module assemblies of MMC circuits are obtained；
MMC circuit topology figures are illustrated in figure 2, wherein each box indicates a submodule, submodule is using half-bridge
The structure of module, each submodule sub-module assemblies in the block include IGBT, capacitance and diode.
Sub-module fault reason mainly has power electronic devices damage, the mistake of the power electronic devices such as IGBT and diode
Loading capability is weaker, and overvoltage, overcurrent or excessively high voltage, current-rising-rate may all cause the damage of power electronic devices
Bad and capacitance damage and triggering control failure etc..The failure of submodule can lead to the oscillation of DC voltage and DC current, most
Cause MMC circuits to be stopped transport at last, so the failure rate of each sub-module assemblies will determine the failure rate of submodule, submodule can
The system reliability of entire MMC circuits will be determined by property.
2) MMC circuits and its running parameter of sub-module assemblies are inputted, primary condition setting is completed；
The following conditions are set, if the electronic device junction temperature of MMC circuits is 100 DEG C, the power of MMC circuits is
The rated current of 30KW, MMC circuit is 50A and rated direct voltage is 800v and sub-module assemblies failure rate is inactive
Pattern under equal to zero, IGBT, capacitance and diode component type be JANTX.
3) according to the failure rate of fault model computational submodule component, the failure rate of submodule is obtained；
According to the fault model of IGBT, the failure rate λ of IGBT is calculatedI=λb·πT·πA·πQπE；
According to the fault model of capacitance, the failure rate λ of capacitance is calculatedC=λbπCV·πQπE；
According to the fault model of diode, the failure rate λ of diode is calculatedD=λb·πT·πS·πC·πQ·πE；
Wherein, λbFor basic failure rate, πTFor temperature factor, πAFor application factor, πQFor qualitative factor, πSFor electric stress because
Element, πCFor structure contact factor, πCVFor capacitance factor, πEFor environmental factor.
Each factor design parameter can be obtained according to the actual use situation of sub-module assemblies, can be calculated such as the following table 1 institute
The failure rate of the IGBT, capacitance and the diode that show.
The failure rate of submodule is denoted as λsm, then the failure rate of the submodule of half-bridge structure is λsm=2 λI+2λD+λC, root
According to the failure rate of each sub-module assemblies shown in table 1, λ is obtainedsm=8.3 × 10-6failures/hour。
4) Markov model for establishing MMC circuits establishes state transition equation based on Markov model；
The state diagram of Markov model is as shown in figure 3, the state transition equation established based on Markov model isP0+P1=1；
Wherein, λ=6n λsm, λ is the failure rate of MMC circuits, and μ is return rate, the i.e. repair rate of MMC circuits, P0For MMC electricity
Road is in the probability of normal operating conditions, P1For the probability that any submodule on any bridge arm of MMC circuits breaks down, t
For the time, n is the submodule quantity of each bridge arm of MMC circuits, λsmFor submodule failure rate, its pass through step 3) calculate
It obtains.
5) solving state equation of transfer, obtain the failure rates of MMC circuits at any time with the variation function of number of modules, reliability
At any time with the variation function and mean time to failure, MTTF of number of modules；
If return rate μ=0 of MMC circuits, that is, require the submodule to break down is modulated in maintenance to change into normally, wherein
Repair process is ignored；
By solving state equation of transfer, obtains MMC circuits and be in the probability of normal operating conditions at any time and number of modules
Variation function be P0(t),
And then obtain,
The failure rate of MMC circuits is at any time P with the variation function of number of modules1(t)=1-P0(t), i.e.,
Reliability is at any time R (t)=P with the variation function of number of modules0(t), i.e.,It is specific
Variation diagram is as shown in Figure 4；
Mean time to failure, MTTF isI.e.
The basic principles and main features and advantage of the present invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe the originals of the present invention
Reason, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes and improvements
It all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its equivalent circle
It is fixed.
Claims (6)
1. the failure rate appraisal procedure of MMC a kind of, which is characterized in that include the following steps：
1) submodule and sub-module assemblies of MMC circuits are obtained；
2) MMC circuits and its running parameter of sub-module assemblies are inputted, primary condition setting is completed；
3) according to the failure rate of fault model computational submodule component, the failure rate of submodule is obtained；
4) Markov model for establishing MMC circuits establishes state transition equation based on Markov model；
5) solving state equation of transfer obtains the failure rate of MMC circuits at any time with the variation function of number of modules, and reliability is at any time
Between and number of modules variation function and mean time to failure, MTTF；
State transition equation in the step 4) isP0+P1=1；
Wherein, λ=6n λsm, λ is the failure rate of MMC circuits, and μ is the return rate of MMC circuits, P0It is in normal work for MMC circuits
Make shape probability of state, P1For the probability that any submodule on any bridge arm of MMC circuits breaks down, t is time, n MMC
The submodule quantity of each bridge arm of circuit, λsmFor the failure rate of submodule.
2. the failure rate appraisal procedure of MMC according to claim 1 a kind of, it is characterised in that：The sub-module assemblies packet
Include IGBT, capacitance and diode.
3. the failure rate appraisal procedure of MMC according to claim 2 a kind of, it is characterised in that：Root in the step 3)
According to the failure rate of fault model computational submodule component, including,
According to the fault model of IGBT, the failure rate λ of IGBT is calculatedI=λb·πT·πA·πQ·πE；
According to the fault model of capacitance, the failure rate λ of capacitance is calculatedC=λb·πCV·πQ·πE；
According to the fault model of diode, the failure rate λ of diode is calculatedD=λb·πT·πS·πC·πQ·πE；
Wherein, λbFor basic failure rate, πTFor temperature factor, πAFor application factor, πQFor qualitative factor, πSFor electric stress factor,
πCFor structure contact factor, πCVFor capacitance factor, πEFor environmental factor.
4. the failure rate appraisal procedure of MMC according to claim 3 a kind of, it is characterised in that：Son in the step 3)
The failure rate of module is denoted as λsm, when submodule uses the structure of half-bridge submodule, then the failure rate of half-bridge submodule is λsm=2 λI
+2λD+λC。
5. the failure rate appraisal procedure of MMC according to claim 1 a kind of, it is characterised in that：The MMC circuits and its son
The parameter of modular assembly includes electronic device junction temperature, power, rated current and the rated direct voltage and submodule of MMC circuits
Sub-module assemblies failure rate is equal to zero under the type of block assembly and inactive pattern.
6. the failure rate appraisal procedure of MMC according to claim 1 a kind of, it is characterised in that：Asking in the step 5)
State transition equation is solved, including,
If return rate μ=0 of MMC circuits, that is, require the submodule to break down is modulated in maintenance to change into normally；
Then by solving state equation of transfer, obtain,
The probability that MMC circuits are in normal operating conditions is at any time P with the variation function of number of modules0(t)；
And then obtain,
The failure rate of MMC circuits is at any time P with the variation function of number of modules1(t)=1-P0(t),
Reliability is at any time R (t)=P with the variation function of number of modules0(t),
Mean time to failure, MTTF is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610619580.1A CN106202970B (en) | 2016-07-29 | 2016-07-29 | A kind of failure rate appraisal procedure of MMC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610619580.1A CN106202970B (en) | 2016-07-29 | 2016-07-29 | A kind of failure rate appraisal procedure of MMC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106202970A CN106202970A (en) | 2016-12-07 |
| CN106202970B true CN106202970B (en) | 2018-09-25 |
Family
ID=57497367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610619580.1A Active CN106202970B (en) | 2016-07-29 | 2016-07-29 | A kind of failure rate appraisal procedure of MMC |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106202970B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108399275A (en) * | 2018-01-18 | 2018-08-14 | 国网浙江省电力公司舟山供电公司 | A kind of MMC Primary Component comprehensive life prediction techniques considering mission profile |
| CN108509674B (en) * | 2018-02-06 | 2021-10-26 | 重庆大学 | Improved hybrid MMC (modular multilevel converter) operation reliability evaluation model and method |
| CN108414856B (en) * | 2018-02-26 | 2020-07-28 | 南方电网科学研究院有限责任公司 | Service life evaluation method and device for submodule capacitor of modular multilevel converter |
| CN110098754B (en) * | 2019-04-25 | 2020-11-06 | 国网冀北电力有限公司 | MMC redundancy submodule effective utilization rate calculation method considering standby redundancy |
| CN112799890B (en) * | 2020-12-31 | 2022-10-14 | 南京航空航天大学 | Bus SEU-resistant reliability modeling and evaluating method |
| CN113946962B (en) * | 2021-10-19 | 2024-06-14 | 国网山西省电力公司电力科学研究院 | Method and system for quantitatively evaluating standby scheme of electric energy router |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130612A (en) * | 2010-12-20 | 2011-07-20 | 中国电力科学研究院 | Integrated control sub-module board for simulating multi-level modular converter (MMC) sub-module |
| CN102969888A (en) * | 2012-11-01 | 2013-03-13 | 华北电力大学 | Design method for multi media card (MMC) self-defining submodule based on real time digital system (RTDS) |
| CN104199997A (en) * | 2014-07-16 | 2014-12-10 | 华北电力大学 | Designing method of MMC multi-sub-module user-defined integrated component |
| CN105137328A (en) * | 2015-07-24 | 2015-12-09 | 四川航天系统工程研究所 | Analog integrated circuit early-stage soft fault diagnosis method and system based on HMM |
-
2016
- 2016-07-29 CN CN201610619580.1A patent/CN106202970B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130612A (en) * | 2010-12-20 | 2011-07-20 | 中国电力科学研究院 | Integrated control sub-module board for simulating multi-level modular converter (MMC) sub-module |
| CN102969888A (en) * | 2012-11-01 | 2013-03-13 | 华北电力大学 | Design method for multi media card (MMC) self-defining submodule based on real time digital system (RTDS) |
| CN104199997A (en) * | 2014-07-16 | 2014-12-10 | 华北电力大学 | Designing method of MMC multi-sub-module user-defined integrated component |
| CN105137328A (en) * | 2015-07-24 | 2015-12-09 | 四川航天系统工程研究所 | Analog integrated circuit early-stage soft fault diagnosis method and system based on HMM |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106202970A (en) | 2016-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106202970B (en) | A kind of failure rate appraisal procedure of MMC | |
| CN104597370B (en) | The detection method of the modularization multi-level converter IGBT open faults based on state observer | |
| CN103248255B (en) | Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof | |
| US20170279279A1 (en) | Power converter | |
| US11532935B2 (en) | Rapid shutdown device for photovoltaic system and control method thereof and protection system | |
| CN110995036B (en) | Capacitance monitoring method of modular multilevel converter based on full-bridge submodule | |
| CN105226975A (en) | TNPC DC-to-AC converter and bridgc arm short detection method thereof | |
| US10498152B2 (en) | Method for the reformation of an electrolytic capacitor in a converter and converter with such | |
| US20230155386A1 (en) | Direct current bus voltage control method and apparatus, and power system | |
| CN113708654B (en) | Flexible direct current converter valve integrating surplus power dissipation function and control method | |
| CN111398772A (en) | Circuit, method and device for converter valve overcurrent turn-off test | |
| CN109921614A (en) | A kind of modularization multi-level converter capacitance state monitoring method based on sequence | |
| CN103973148A (en) | Power conditioner, photovoltaic system and abnormality determination method | |
| CA3207640A1 (en) | Power converter systems for electrolysis stacks | |
| Ma et al. | Reactive power control methods for improved reliability of wind power inverters under wind speed variations | |
| US10148206B2 (en) | Controlling operation of a power converter based on grid conditions | |
| CN111953067B (en) | Energy information hub of intelligent power distribution room +5G base station based on low-voltage direct current and reliability and energy efficiency evaluation method thereof | |
| CN103762583A (en) | Tandem type multi-terminal direct-current power transmission system and power control method thereof | |
| CN110098754B (en) | MMC redundancy submodule effective utilization rate calculation method considering standby redundancy | |
| JP2013228794A (en) | Solar cell system | |
| US10355629B2 (en) | Control method for protecting generators | |
| CN114337225B (en) | Method for improving reliability of converter based on health status monitoring | |
| KR101896396B1 (en) | Grid-interactive inverter of parallel stack structure | |
| CN115001011B (en) | Topological structure of offshore distributed direct current transmission system and direct current protection control method | |
| CN113726209B (en) | Unloading circuit for wind power converter and control method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |