CN106202970B - A kind of failure rate appraisal procedure of MMC - Google Patents
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Abstract
本发明公开了一种MMC的故障率评估方法，包括以下步骤：1）获得MMC电路的子模块和子模块组件；2）输入MMC电路及其子模块组件的工作参数，完成初始条件设定；3）根据故障模型计算子模块组件的故障率，得到子模块的故障率；4）建立MMC电路的马尔可夫模型，基于马尔可夫模型建立状态转移方程；5）求解状态转移方程，得到MMC电路的故障率随时间和模块数的变化函数，可靠性随时间和模块数的变化函数，以及平均失效时间。大幅提高子模块组件的故障率的计算可靠性，提高MMC电路的故障率的估计可靠性；通过马尔可夫模型的运用，使求解得到的MMC电路的故障率和平均寿命更准确、且随时间变化而变化，具有动态性，故障评估精度高。
The invention discloses a failure rate evaluation method of MMC, which comprises the following steps: 1) Obtaining sub-modules and sub-module components of the MMC circuit; 2) Inputting the working parameters of the MMC circuit and its sub-module components to complete initial condition setting; 3. ) Calculate the failure rate of the sub-module components according to the failure model to obtain the failure rate of the sub-module; 4) Establish the Markov model of the MMC circuit, and establish the state transition equation based on the Markov model; 5) Solve the state transition equation to obtain the MMC circuit The failure rate as a function of time and number of modules, the reliability as a function of time and number of modules, and the mean time to failure. Greatly improve the calculation reliability of the failure rate of sub-module components, and improve the estimation reliability of the failure rate of the MMC circuit; through the application of the Markov model, the failure rate and average life of the MMC circuit obtained by the solution are more accurate and can be improved over time. It is dynamic and has high accuracy of fault assessment.
Description
技术领域technical field
本发明涉及一种故障率评估方法，特别是涉及一种MMC的故障率评估方法，属于电力系统可靠性评估领域。The invention relates to a failure rate evaluation method, in particular to an MMC failure rate evaluation method, and belongs to the field of power system reliability evaluation.
背景技术Background technique
模块化多电平变换器(Modular Multilevel Converter，MMC)，自2002年由德国学者R.Marquardt等提出以后，因其在高压大功率应用方面的独特优势，得到了各国学者的广泛关注和研究，主要集中在高压直流输电HVDC、电能质量治理和交流传动等领域，尤其是高压直流输电换流器的首要选择。Modular Multilevel Converter (MMC), since it was proposed by German scholar R. Marquardt in 2002, has been widely concerned and researched by scholars from various countries because of its unique advantages in high-voltage and high-power applications. Mainly concentrated in the fields of HVDC, power quality control and AC drive, especially the primary choice of HVDC converters.
模块化多电平变换器MMC中有多个子模块，子模块的可靠性大大影响了MMC整体的可靠性，子模块故障会对MMC变换器的正常运行造成影响，所以研究MMC的故障率是有必要的。There are multiple sub-modules in the modular multi-level converter MMC. The reliability of the sub-modules greatly affects the overall reliability of the MMC. The failure of a sub-module will affect the normal operation of the MMC converter. Therefore, it is necessary to study the failure rate of the MMC. necessary.
在传统的故障率评估方法中，都是设定明确的子模块故障率为λsm＝λI 2λD 2λC，以及MMC的故障率为P＝6nλsm，其中，λI是IGBT(绝缘栅双极型晶体管)的故障率，λD是二极管的故障率，λC是电容的故障率，n为每一桥臂的子模块数量。In the traditional failure rate evaluation method, a clear submodule failure rate is set to λ sm = λ I 2 λ D 2 λ C , and the MMC failure rate is P = 6nλ sm , where λ I is IGBT( IGBT), λ D is the failure rate of the diode, λ C is the failure rate of the capacitor, and n is the number of sub-modules in each bridge arm.
传统的故障率评估方法中，组件的故障率没有使用故障模型计算，所以得到的子模块故障率是不可靠的；而且，也没有使用模型来求解MMC电路的故障率，导致计算得到的MMC故障率精度较低。In the traditional failure rate evaluation method, the failure rate of components is not calculated using the failure model, so the obtained sub-module failure rate is unreliable; moreover, the model is not used to solve the failure rate of the MMC circuit, resulting in the calculated MMC failure rate Rate accuracy is low.
发明内容Contents of the invention
本发明的主要目的在于，克服现有技术中的不足，提供一种MMC的故障率评估方法，解决传统故障率评估方法不能充分反应不同时间下MMC电路的可靠性，而且可提高MMC电路故障率和平均寿命的估计精度。The main purpose of the present invention is to overcome the deficiencies in the prior art, provide a kind of failure rate assessment method of MMC, solve the traditional failure rate assessment method can not fully reflect the reliability of MMC circuit under different time, and can improve MMC circuit failure rate and the estimation accuracy of the mean lifetime.
为了达到上述目的，本发明所采用的技术方案是：In order to achieve the above object, the technical scheme adopted in the present invention is:
一种MMC的故障率评估方法，包括以下步骤：A failure rate evaluation method of MMC, comprising the following steps:
1)获得MMC电路的子模块和子模块组件；1) Obtain the submodule and submodule assembly of the MMC circuit;
2)输入MMC电路及其子模块组件的工作参数，完成初始条件设定；2) Input the working parameters of the MMC circuit and its sub-module components, and complete the initial condition setting;
3)根据故障模型计算子模块组件的故障率，得到子模块的故障率；3) Calculate the failure rate of the sub-module components according to the failure model to obtain the failure rate of the sub-module;
4)建立MMC电路的马尔可夫模型，基于马尔可夫模型建立状态转移方程；4) Establish the Markov model of the MMC circuit, and establish the state transition equation based on the Markov model;
5)求解状态转移方程，得到MMC电路的故障率随时间和模块数的变化函数，可靠性随时间和模块数的变化函数，以及平均失效时间。5) Solve the state transition equation to obtain the change function of the failure rate of the MMC circuit with time and the number of modules, the change function of reliability with time and the number of modules, and the average failure time.
本发明进一步设置为：所述子模块组件包括IGBT、电容和二极管。The present invention is further provided that: the sub-module assembly includes an IGBT, a capacitor and a diode.
本发明进一步设置为：所述步骤3)中的根据故障模型计算子模块组件的故障率，包括，The present invention is further set to: in said step 3), calculate the failure rate of the sub-module assembly according to the failure model, including,
根据IGBT的故障模型，计算IGBT的故障率λI＝λb·πT·πA·πQ·πE；According to the IGBT failure model, calculate the IGBT failure rate λ I =λ b π T π A π Q π E ;
根据电容的故障模型，计算电容的故障率λC＝λb·πCV·πQ·πE；According to the failure model of the capacitor, calculate the failure rate of the capacitor λ C = λ b · π CV · π Q · π E ;
根据二极管的故障模型，计算二极管的故障率λD＝λb·πT·πS·πC．πQ．πE；According to the failure model of the diode, calculate the failure rate of the diode λ D =λ b ·π T ·π S ·π C . π Q. πE ;
其中，λb为基础故障率，πT为温度因素，πA为应用因素，πQ为质量因素，πS为电应力因素，πC为结构接触因素，πCV为电容因素，πE为环境因素。Among them, λ b is the basic failure rate, π T is the temperature factor, π A is the application factor, π Q is the quality factor, π S is the electrical stress factor, π C is the structural contact factor, π CV is the capacitance factor, and π E is the envirnmental factor.
本发明进一步设置为：所述步骤3)中的子模块的故障率记为λsm，当子模块采用半桥子模块的结构，则半桥子模块的故障率为λsm＝2λI+2λD+λC。The present invention is further set to: the failure rate of the sub-module in the step 3) is recorded as λ sm , when the sub-module adopts the structure of the half-bridge sub-module, then the failure rate of the half-bridge sub-module is λ sm =2λ I +2λ D +λ C .
本发明进一步设置为：所述MMC电路及其子模块组件的参数包括MMC电路的电子器件结温、功率、额定电流和额定直流电压，以及子模块组件的类型和不活跃模式下子模块组件故障率等于零。The present invention is further set to: the parameters of the MMC circuit and its submodule components include the electronic device junction temperature, power, rated current and rated DC voltage of the MMC circuit, and the type of the submodule component and the failure rate of the submodule component in the inactive mode is equal to zero.
本发明进一步设置为：所述步骤4)中的状态转移方程为The present invention is further set to: the state transition equation in the step 4) is
其中，λ＝6nλsm，λ为MMC电路的故障率，μ为MMC电路的返回率，P0为MMC电路处于正常工作状态的概率，P1为MMC电路的任一桥臂上的任一子模块发生故障的概率，t为时间，n为MMC电路的每一桥臂的子模块数量，λsm为子模块的故障率。Among them, λ=6nλ sm , λ is the failure rate of the MMC circuit, μ is the return rate of the MMC circuit, P 0 is the probability that the MMC circuit is in a normal working state, and P 1 is any child on any bridge arm of the MMC circuit The probability of module failure, t is time, n is the number of sub-modules in each bridge arm of the MMC circuit, and λ sm is the failure rate of sub-modules.
本发明进一步设置为：所述步骤5)中的求解状态转移方程，包括，The present invention is further set to: solving the state transition equation in the step 5), including,
设MMC电路的返回率μ＝0，即要求发生故障的子模块在检修中已调换成正常；Set the return rate of the MMC circuit μ=0, that is to say, the faulty sub-module has been replaced to normal during maintenance;
则通过求解状态转移方程，得到，Then by solving the state transition equation, we get,
MMC电路处于正常工作状态的概率随时间和模块数的变化函数为P0(t)；The probability that the MMC circuit is in a normal working state varies with time and the number of modules as P 0 (t);
进而得到，And then get,
MMC电路的故障率随时间和模块数的变化函数为P1(t)＝1-P0(t)，The change function of the failure rate of the MMC circuit with time and the number of modules is P 1 (t)=1-P 0 (t),
可靠性随时间和模块数的变化函数为R(t)＝P0(t)，The variation function of reliability with time and the number of modules is R(t)=P 0 (t),
平均失效时间为 The mean time to failure is
与现有技术相比，本发明具有的有益效果是：Compared with prior art, the beneficial effect that the present invention has is:
通过对MMC电路及其子模块组件的参数的条件设定，根据故障模型得到子模块组件的故障率，从而建立马尔可夫模型，进而基于马尔可夫模型建立状态转移方程，并通过求解状态转移方程来得到不同模块数下随时间变化的MMC电路的故障率、可靠性以及平均失效时间等参数；不仅大幅提高子模块组件的故障率的计算可靠性，而且提高MMC电路的故障率的估计可靠性；更是通过马尔可夫模型的运用，使求解得到的MMC电路的故障率和平均寿命更加准确、且随时间变化而变化，具有动态性，提高故障估计精度。By setting the conditions of the parameters of the MMC circuit and its sub-module components, the failure rate of the sub-module components is obtained according to the fault model, thereby establishing a Markov model, and then establishing a state transition equation based on the Markov model, and by solving the state transition Equation to obtain the time-varying failure rate, reliability and average failure time of MMC circuits with different module numbers and other parameters; not only greatly improve the calculation reliability of the failure rate of sub-module components, but also improve the reliability of the estimation of the failure rate of MMC circuits Moreover, through the application of the Markov model, the failure rate and average life of the MMC circuit obtained by the solution are more accurate and change with time, which is dynamic and improves the accuracy of fault estimation.
上述内容仅是本发明技术方案的概述，为了更清楚的了解本发明的技术手段，下面结合附图对本发明作进一步的描述。The above content is only an overview of the technical solution of the present invention. In order to understand the technical means of the present invention more clearly, the present invention will be further described below in conjunction with the accompanying drawings.
附图说明Description of drawings
图1为本发明一种MMC的故障率评估方法的流程图；Fig. 1 is the flow chart of the failure rate evaluation method of a kind of MMC of the present invention;
图2为本发明采用的MMC电路拓扑图；Fig. 2 is the MMC circuit topological diagram that the present invention adopts;
图3为本发明建立的马尔可夫模型的状态图；Fig. 3 is the state diagram of the Markov model that the present invention establishes;
图4为本发明求解状态转移方程后得到建立的可靠性随时间和模块数的变化图。Fig. 4 is a diagram showing the variation of the established reliability with time and the number of modules after solving the state transition equation in the present invention.
具体实施方式Detailed ways
下面结合说明书附图，对本发明作进一步的说明。Below in conjunction with accompanying drawing of description, the present invention will be further described.
本发明提供一种MMC的故障率评估方法，如图1所示，包括以下步骤：The present invention provides a kind of failure rate assessment method of MMC, as shown in Figure 1, comprises the following steps:
1)获得MMC电路的子模块和子模块组件；1) Obtain the submodule and submodule assembly of the MMC circuit;
如图2所示为MMC电路拓扑图，其中每个方框表示一个子模块，子模块采用半桥子模块的结构，每一子模块中的子模块组件包括IGBT、电容和二极管。Figure 2 shows the topological diagram of the MMC circuit, in which each box represents a sub-module, and the sub-module adopts the structure of a half-bridge sub-module, and the sub-module components in each sub-module include IGBT, capacitor and diode.
子模块故障原因，主要有电力电子器件损坏，IGBT和二极管等电力电子器件的过载能力较弱，过电压、过电流或者过高的电压、电流上升率都可能造成电力电子器件的损坏，以及电容损坏和触发控制故障等。子模块的故障会导致直流电压和直流电流的振荡，最终将导致MMC电路停运，所以每个子模块组件的故障率将决定子模块的故障率，子模块的可靠性将决定整个MMC电路的系统可靠性。The main cause of sub-module failure is the damage of power electronic devices. The overload capacity of power electronic devices such as IGBT and diodes is weak. Overvoltage, overcurrent or excessive voltage and current rise rate may cause damage to power electronic devices, and capacitor Damage and trigger control failure etc. The failure of the sub-module will cause the oscillation of DC voltage and DC current, which will eventually lead to the outage of the MMC circuit, so the failure rate of each sub-module component will determine the failure rate of the sub-module, and the reliability of the sub-module will determine the system of the entire MMC circuit reliability.
2)输入MMC电路及其子模块组件的工作参数，完成初始条件设定；2) Input the working parameters of the MMC circuit and its sub-module components, and complete the initial condition setting;
对以下条件进行设定，设MMC电路的电子器件结温为100℃，MMC电路的功率为30KW，MMC电路的额定电流为50A和额定直流电压为800v，以及子模块组件故障率在不活跃的模式下等于零，IGBT、电容和二极管的组件类型为JANTX。Set the following conditions, assuming that the electronic device junction temperature of the MMC circuit is 100°C, the power of the MMC circuit is 30KW, the rated current of the MMC circuit is 50A and the rated DC voltage is 800v, and the failure rate of sub-module components is inactive In mode equal to zero, the component type of IGBT, capacitor and diode is JANTX.
3)根据故障模型计算子模块组件的故障率，得到子模块的故障率；3) Calculate the failure rate of the sub-module components according to the failure model to obtain the failure rate of the sub-module;
根据IGBT的故障模型，计算IGBT的故障率λI＝λb·πT·πA·πQ．πE；According to the failure model of IGBT, calculate the failure rate of IGBT λ I =λ b ·π T ·π A ·π Q . πE ;
根据电容的故障模型，计算电容的故障率λC＝λb．πCV·πQ．πE；According to the failure model of the capacitor, calculate the failure rate of the capacitor λ C = λ b . π CV · π Q . πE ;
根据二极管的故障模型，计算二极管的故障率λD＝λb·πT·πS·πC·πQ·πE；According to the failure model of the diode, calculate the failure rate of the diode λ D =λ b ·π T ·π S ·π C ·π Q ·π E ;
其中，λb为基础故障率，πT为温度因素，πA为应用因素，πQ为质量因素，πS为电应力因素，πC为结构接触因素，πCV为电容因素，πE为环境因素。Among them, λ b is the basic failure rate, π T is the temperature factor, π A is the application factor, π Q is the quality factor, π S is the electrical stress factor, π C is the structural contact factor, π CV is the capacitance factor, and π E is the envirnmental factor.
各因素具体参数可根据子模块组件的实际使用情况获得，可计算得到如下表1所示的IGBT、电容和二极管的故障率。The specific parameters of each factor can be obtained according to the actual use of the sub-module components, and the failure rates of IGBTs, capacitors and diodes shown in Table 1 below can be calculated.
将子模块的故障率记为λsm，则半桥结构的子模块的故障率为λsm＝2λI+2λD+λC，根据表1所示各子模块组件的故障率，得到λsm＝8.3×10-6failures/hour。Denote the failure rate of the sub-module as λ sm , then the failure rate of the sub-module of the half-bridge structure is λ sm = 2λ I + 2λ D + λ C , according to the failure rate of each sub-module component shown in Table 1, λ sm is obtained =8.3×10 -6 failures/hour.
4)建立MMC电路的马尔可夫模型，基于马尔可夫模型建立状态转移方程；4) Establish the Markov model of the MMC circuit, and establish the state transition equation based on the Markov model;
马尔可夫模型的状态图如图3所示，基于马尔可夫模型建立的状态转移方程为P0+P1＝1；The state diagram of the Markov model is shown in Figure 3, and the state transition equation established based on the Markov model is P 0 +P 1 =1;
其中，λ＝6nλsm，λ为MMC电路的故障率，μ为MMC电路的返回率、即修复率，P0为MMC电路处于正常工作状态的概率，P1为MMC电路的任一桥臂上的任一子模块发生故障的概率，t为时间，n为MMC电路的每一桥臂的子模块数量，λsm为子模块的故障率、其已通过步骤3)计算得到。Among them, λ=6nλ sm , λ is the failure rate of the MMC circuit, μ is the return rate of the MMC circuit, that is, the repair rate, P 0 is the probability that the MMC circuit is in a normal working state, and P 1 is on any bridge arm of the MMC circuit The probability of failure of any submodule of , t is time, n is the number of submodules of each bridge arm of the MMC circuit, and λ sm is the failure rate of the submodule, which has been calculated by step 3).
5)求解状态转移方程，得到MMC电路的故障率随时间和模块数的变化函数，可靠性随时间和模块数的变化函数，以及平均失效时间；5) Solve the state transition equation to obtain the change function of the failure rate of the MMC circuit with time and the number of modules, the change function of reliability with time and the number of modules, and the average failure time;
设MMC电路的返回率μ＝0，即要求发生故障的子模块在检修中已调换成正常，其中修复过程忽略；Let the return rate of the MMC circuit μ=0, that is, the faulty sub-module is required to be replaced to normal during maintenance, and the repair process is ignored;
通过求解状态转移方程，得到MMC电路处于正常工作状态的概率随时间和模块数的变化函数为P0(t)， By solving the state transition equation, the probability that the MMC circuit is in a normal working state varies with time and the number of modules as P 0 (t),
进而得到，And then get,
MMC电路的故障率随时间和模块数的变化函数为P1(t)＝1-P0(t)，即 The function of the failure rate of the MMC circuit with time and the number of modules is P 1 (t) = 1-P 0 (t), that is
可靠性随时间和模块数的变化函数为R(t)＝P0(t)，即其具体变化图如图4所示；The variation function of reliability with time and the number of modules is R(t)=P 0 (t), that is Its specific change diagram is shown in Figure 4;
平均失效时间为即 The mean time to failure is which is
以上显示和描述了本发明的基本原理、主要特征及优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。The basic principles, main features and advantages of the present invention have been shown and described above. Those skilled in the industry should understand that the present invention is not limited by the above-mentioned embodiments. What are described in the above-mentioned embodiments and the description only illustrate the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention will also have Variations and improvements are possible, which fall within the scope of the claimed invention. The protection scope of the present invention is defined by the appended claims and their equivalents.
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