CN106200141A - Display device - Google Patents
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- CN106200141A CN106200141A CN201510214582.8A CN201510214582A CN106200141A CN 106200141 A CN106200141 A CN 106200141A CN 201510214582 A CN201510214582 A CN 201510214582A CN 106200141 A CN106200141 A CN 106200141A
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- conductive layer
- contact site
- display device
- semiconductor layer
- dot structure
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- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 132
- 239000010409 thin film Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- -1 organo-siloxane compound Chemical class 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The array basal plate of a kind of display device has at least one dot structure, and dot structure comprises one first conductive layer, one second conductive layer and monoxide semiconductor layer.First conductive layer has the cabling portion extended along a first direction, and cabling portion has one first side and one second side relative with the first side.Second conductive layer is arranged on the first conductive layer, and has two contact sites, and those contact sites are correspondingly arranged in the first side and the second side respectively.Oxide semiconductor layer is arranged between the first conductive layer and the second conductive layer, wherein, oxide semiconductor layer contacts those contact sites respectively, and there is one first width in the first direction, one of them of those contact sites and the first conductive layer have an overlay region, this overlay region has one second width of maximum in the first direction, and the first width is less than the second width.
Description
Technical field
The present invention is about a kind of flat display apparatus.
Background technology
Along with science and technology progress, two-d display panel is used in various field the most widely, because of have build frivolous,
Low power consumption and the advantageous characteristic such as radiationless, the most gradually replace conventional cathode ray tube display device, and apply
To the electronic product of numerous species, such as mobile phone, portable multimedia device, notebook computer, liquid crystal electricity
Depending on and LCD screen etc..
As a example by display panels, known a kind of display panels comprises a thin film transistor base plate, a colored filter
Photopolymer substrate and a liquid crystal layer, thin film transistor base plate is relative with colored optical filtering substrates and sets, and liquid crystal layer is folded in thin film
Between transistor base and colored optical filtering substrates.Wherein, thin film transistor base plate has multiple pixel and is arranged at a substrate
On, and the turning to of liquid crystal molecule of liquid crystal layer can be controlled by controlling described pixel and make display floater show image.
Further, since the quick competition in market so that the display device of higher resolution and higher display quality is always
One of target that industry is persistently pursued.Therefore, how to provide a kind of display device, the size that can make dot structure is less
And be applied to the product of higher resolution, and there is higher display quality, it has also become one of important topic.
Summary of the invention
Because above-mentioned problem, the purpose of the present invention is applied to relatively for providing a kind of size making dot structure less
The product of high-res, and there is the display device of higher display quality.
For reaching above-mentioned purpose, according to a kind of display device of the present invention, including array basal plate, an opposite substrate and
One display dielectric layer.Array base palte has at least one dot structure, dot structure comprise one first conductive layer, one second
Conductive layer and monoxide semiconductor layer.First conductive layer has the cabling portion extended along a first direction, cabling portion
There is one first side and one second side relative with the first side.Second conductive layer is arranged on the first conductive layer, and has
Two contact sites, described contact site are had to be correspondingly arranged in the first side and the second side respectively.Oxide semiconductor layer is arranged at
Between one conductive layer and the second conductive layer, the two ends of oxide semiconductor layer contact described contact site respectively, and along first
Direction has one first width, and one of them of described contact site and the first conductive layer have an overlay region, edge, overlay region
First direction has one second width of maximum, and the first width is less than the second width.Display dielectric layer is arranged at array base
Between plate and opposite substrate.
In one embodiment, the first conductive layer also has a protuberance, and protuberance is extended protrusion by second side in cabling portion.
In one embodiment, one of them of cabling portion and described contact site has and partly overlaps, and protuberance connects with described
Contact portion wherein another has and partly overlaps.
In one embodiment, oxide semiconductor layer has a junction and is positioned at two ends of connecting portion both sides, connects
Portion's width in the first direction is less than one of them width in the first direction of described end.
In one embodiment, dot structure further includes one first insulating barrier, and the first insulating barrier is arranged at oxide semiconductor
Between layer and the second conductive layer, the first insulating barrier has two openings corresponding to described contact site, and described contact site warp
Contacted with oxide semiconductor layer by described opening.
In one embodiment, one of them of described opening makes one of them end of oxide semiconductor layer reveal completely
Go out.
In one embodiment, the first insulating barrier covers wherein another end of oxide semiconductor layer.
In one embodiment, dot structure further includes one second insulating barrier and an electrode, and the second insulating barrier is arranged at second
On conductive layer, electrode is arranged on the second insulating barrier, and electrode connects described contact by a through hole of the second insulating barrier
One of them of portion.
In one embodiment, dot structure further includes a shading rod, and shading rod is arranged at the first side of the first conductive layer,
And through hole is corresponding between shading rod and cabling portion.
In one embodiment, the second conductive layer has more the wire portion extended along a second direction, and wire portion is with described
Contact site wherein another connects, and first direction and second direction substantial orthogonality.
From the above, because, in the display device of the present invention, it is the most right that the second conductive layer of dot structure has two contact sites
The first side and second side in the cabling portion of the first conductive layer should be arranged at, and oxide semiconductor layer is arranged at the first conduction
Between layer and the second conductive layer, and its two ends contact described contact site respectively.It addition, oxide semiconductor layer is along first
First width in direction is the most maximum with the overlay region of the first conductive layer less than one of them of described contact site
The second width.Therefore, by the design of dot structure of the present invention so that the size of dot structure is less and applies
In the product of higher resolution, and have preferably electrical performance and there is higher display quality.
Accompanying drawing explanation
Figure 1A is the schematic diagram of a kind of display device of present pre-ferred embodiments；
Figure 1B is in the display device of Figure 1A, the schematic diagram of multiple dot structures；
Fig. 1 C is in Figure 1B, the enlarged diagram of a dot structure；
Fig. 1 D is in Fig. 1 C, linearly the cross-sectional schematic of A-A；
Fig. 1 E is another schematic diagram of the display device 1 of the present invention；
Fig. 2 is the schematic diagram of the dot structure of another enforcement aspect of the present invention；
Fig. 3 A to Fig. 3 E is respectively the schematic diagram of the dot structure of difference aspect of the present invention.
Detailed description of the invention
Hereinafter with reference to correlative type, the display device according to present pre-ferred embodiments being described, the most identical element will
It is illustrated with identical reference marks.
Refer to shown in Figure 1A to Fig. 1 D, wherein, Figure 1A is a kind of display device 1 of present pre-ferred embodiments
Schematic diagram, Figure 1B is in the display device 1 of Figure 1A, the schematic diagram of multiple dot structure P, Fig. 1 C for figure
In 1B, the enlarged diagram of a dot structure P, and Fig. 1 D is in Fig. 1 C, linearly the section view of A-A is shown
It is intended to.A first direction D1, second direction D2 and a third direction D3, first direction is shown in diagram
D1, second direction D2 and third direction D3 are mutually perpendicular to the most two-by-two.Wherein, first direction D1 can with sweep
The bearing of trend retouching line is substantial parallel, and second direction D2 can be substantial parallel with the bearing of trend of data wire, and the
Three direction D3 are respectively the other direction of essence vertical first direction D1 and second direction D2.
As shown in Figure 1A, display device 1 includes array basal plate 11, opposite substrate 12 and a display medium
Layer 13.
Array base palte 11 is oppositely arranged with opposite substrate 12, display dielectric layer 13 be then folded in array base palte 11 with
Between opposite substrate 12.Array base palte 11 and opposite substrate 12 can comprise light-transmitting materials, and for example, one glass respectively
Glass substrate, a quartz base plate or a plastic substrate, do not limit.The display device 1 of the present embodiment can be a liquid crystal
Show panel or an organic LED display panel.In this, as a example by display panels, therefore display dielectric layer
13 is a liquid crystal layer.Wherein, array base palte 11 can be a thin film transistor base plate, and opposite substrate 12 can be one
Colored optical filtering substrates, and array base palte 11, display dielectric layer 13 can form a LCD with opposite substrate 12
Plate.But, in different embodiments, if display device 1 is an organic light emission two body display floater, then show
Dielectric layer 13 can be an Organic Light Emitting Diode layer.In one embodiment, if Organic Light Emitting Diode layer sends white light
Time, then opposite substrate 12 can be a colored optical filtering substrates；In another embodiment, if Organic Light Emitting Diode layer is sent out
When going out such as red, green, blue coloured light, then opposite substrate 12 can be a protective substrate (Cover plate), has with protection
Machine LED layers is not polluted by extraneous aqueous vapor or foreign body.
As shown in Figure 1B to Fig. 1 D, array base palte 11 have a substrate 110 (Figure 1B, Fig. 1 C does not shows) and
At least one dot structure P, dot structure P are arranged on substrate 110.The present embodiment is to have multiple dot structure P
As a example by, and described dot structure P can be configured to two-dimensional-matrix-like.Dot structure P includes at least one first conductive layer
111, one second conductive layer 112 and monoxide semiconductor layer 113.In this, the first conductive layer 111, second conducts electricity
Layer 112 and oxide semiconductor layer 113 at least can form a thin film transistor (TFT), and are a switch element of pixel.Separately
Outward, as shown in figure ip, the dot structure P of the present embodiment more can include one first insulating barrier 114,1 second insulation
Layer 115, one electrode 116, shading rod 117 and a dielectric layer 118.Wherein, in order to understand the spy of the explanation present invention
Point, the electrode 116 of Figure 1B is represented by dotted lines, and first conductive layer 111 of C display pixel structure P of Fig. 1,
Two conductive layers 112, oxide semiconductor layer 113 and a shading rod 117, do not show other film layer.
As shown in Fig. 1 C and Fig. 1 D, the first conductive layer 111 is arranged on the substrate 110 of array base palte 11, and has
Have one cabling portion 1111 D1 in the first direction extend, and cabling portion 1111 have one first side S1 and with the first side
One second relative for S1 side S2.The cabling portion 1111 of first conductive layer 111 that the first side S1 is Fig. 1 C of the present embodiment
Upside, and the second side S2 is the opposite side (downside in cabling portion 1111) relative for side S1 with first.First conduction
The monolayer or many that the material of layer 111 can be constituted by metal (for example, aluminum, copper, silver, molybdenum or titanium) or its alloy
Rotating fields.Wherein, the first conductive layer 111 can be as a grid (sign) of thin film transistor (TFT) and picture element scan line.
Dielectric layer 118 is arranged on the first conductive layer 111 and substrate 110, and dielectric layer 118 can be organic material example
As for organo-siloxane compound, or inorganic for example, silicon nitride, silicon oxide, silicon oxynitride, carborundum, oxidation
Aluminum, hafnium oxide or the multiple structure of above-mentioned material.The dielectric layer 118 of the present embodiment covers grid and shading rod 117,
And selectable portion or all cover substrate 110.
Second conductive layer 112 is arranged on the first conductive layer 111, and has two contact sites, and described contact site is respectively
It is correspondingly arranged in the first side S1 and the second side S2.The present embodiment is denoted as first corresponding to the contact site of the first side S1
Contact site C1 (can be considered the drain electrode of thin film transistor (TFT), do not indicate), and the contact site corresponding to the second side S2 indicates
It is the second contact site C2 (can be considered the source electrode of thin film transistor (TFT), do not indicate).Additionally, the second conductive layer 112 more may be used
There is the wire portion 1121 that D2 extends in a second direction, and wire portion 1121 is connected with the second contact site C2.In
This, wire portion 1121 can be the data wire of pixel.
Oxide semiconductor layer 113 is arranged between the first conductive layer 111 and the second conductive layer 112, and oxide half
The two ends of conductor layer 113 contact described contact site respectively.The first contact site C1 and the second contact site C2 of the present embodiment
It is respectively arranged on oxide semiconductor layer 113, and the two ends of catalytic oxidation thing semiconductor layer 113.Wherein, oxidation
Thing semiconductor layer 113 can be a channel layer of thin film transistor (TFT), such as but not limited to comprising metal-oxide semiconductor (MOS),
And can include one of them of indium, gallium, zinc and stannum, for example, indium gallium zinc (Indium Gallium Zinc Oxide,
IGZO)。
It addition, as shown in Figure 1 C, the first conductive layer 111 also has a protuberance 1112, and protuberance 1112 by
Cabling portion 1111 extends protrudes.In this, protuberance 1112 is extended to protrude by the second side S2 in cabling portion 1111 (dashes forward
Go out portion 1112 and extend toward being parallel to second direction D2).Wherein, cabling portion 1111 and the first contact site C1 is in the 3rd
Have on the D3 of direction and partly overlap, and protuberance 1112 also has with the second contact site C2 on third direction D3
Partly overlap.
Between first contact site C1 and the second contact site C2, there is an interval.In this, so-called " interval " expression the
It is not connected with between one contact site C1 and the second contact site C2 and spaced a distance.It addition, the first insulating barrier 114 sets
It is placed between oxide semiconductor layer 113 and the second conductive layer 112.In this, the first insulating barrier 114 is arranged at oxidation
On thing semiconductor layer 113 (channel layer), and have corresponding to the first contact site C1 and two of the second contact site C2
Opening O1, O2, and the first contact site C1 and the second contact site C2 via described opening O1, O2 respectively with oxidation
Thing semiconductor layer 113 contacts.
When the oxide semiconductor layer 113 (channel layer) of thin film transistor (TFT) does not turns on, the first contact site C1 and
Two contact site C2 are electrically isolated.First insulating barrier 114 can be organic material for example, organo-siloxane compound, or single
Layer inorganic such as silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide, hafnium oxide or above-mentioned material
The multiple structure of combination, does not limit.But, in other enforcement aspect, it is possible to by the first contact site C1 with
Second contact site C2 is directly arranged on oxide semiconductor layer 113, and is not provided with the first insulating barrier 114.
First insulating barrier 114 of the present embodiment be one etching stop (etch stop) layer, and the first contact site C1 with
Second contact site C2 is respectively arranged at the first insulation of the interior also covering part of opening O1, O2 of the first insulating barrier 114
Layer 114, and contact with oxide semiconductor layer 113 respectively via opening O1, O2 of the first insulating barrier 114.
Thereby, owing to the first contact site C1 being arranged in opening O1, O2 and the second contact site C2 is in third direction D3
Upper only have partly overlap (less overlapping area), therefore, it is possible to decrease thin film transistor (TFT) with the first conductive layer 111
Parasitic capacitance (such as Cgd, Cgs), and then reduce in dot structure P, because of feedforward (feedthrough) phenomenon
The best electrical phenomenon that caused and improve display quality.It addition, the shape of the two of the present embodiment openings O1, O2
Different so that the first contact site C1 being correspondingly arranged in opening O1, O2 and the shape of the second contact site C2 are also
Difference, therefore, can adjust the first contact site C1 and oxide semiconductor layer 113 by the size of opening O1, O2,
And second contact area (adjustment contact resistance) of contact site C2 and oxide semiconductor layer 113, and then reduce
The leakage current of thin film transistor (TFT).
It addition, oxide semiconductor layer 113 D2 in a second direction of the present embodiment extends so that cabling portion 1111
With oxide semiconductor layer 113 substantial orthogonality.Wherein, oxide semiconductor layer 113 has a junction 1131
And it is positioned at two ends 1132,1133 of connecting portion 1131 both sides.Connecting portion 1131 D2 in a second direction extends,
And the width that the width of D1 in the first direction is less than one of them D1 in the first direction of described end 1132,1133.
In other words, the oxide semiconductor layer 113 of the present embodiment is essentially with the cabling portion 1111 of the first conductive layer 111
Vertically, and oxide semiconductor layer 113 to present both sides wider, middle narrower shape, its purpose is except reducing two
Width on neighbor structure P D1 in the first direction (i.e. reduces data wire and the data wire of neighbor structure P
Between distance and make the size of dot structure P less) and can be applicable to outside the product of higher resolution, more in order to
Make to be positioned at the first contact site C1 of those openings O1, O2 and the second contact site C2 and oxide semiconductor layer 113
There is bigger contact area, and then reduce contact resistance.
It addition, as shown in Fig. 1 C, 1D, one of them of described opening O1, O2 of the present embodiment makes oxide half
One of them end of conductor layer 113 is completely exposed, and the first insulating barrier covers oxide semiconductor layer 113 wherein
Another end.In this, (drain electrode end) opening O1 makes an end (Fig. 1 D, the oxygen of oxide semiconductor layer 113
The right end of compound semiconductor layer 113) it is completely exposed, and end 1132 contacts the first contact site C1, and (source
Extreme) opening O2 makes end 1133 part expose in (Fig. 1 D, the left side of oxide semiconductor layer 113), and
The end 1133 that part is exposed contacts the second contact site C2, and the first insulating barrier 114 covers oxide semiconductor layer 113
Left side end.It addition, oxide semiconductor layer 113 D1 in the first direction has one first width w1, described
One of them of contact site C1, C2 and the first conductive layer 111 have an overlay region Z, and overlay region Z is along first party
There is to D1 one second width w2 of maximum, and the first width w1 is less than the second width w2.The of the present embodiment
One width w1 is for example and without limitation on connecting portion 1131 D1 in the first direction of oxide semiconductor layer 113
Big width, and second width w2 for example, first contact site C1 and the first conductive layer 111 are on third direction D3
The Breadth Maximum of overlapping region (overlay region Z), and the first width w1 is less than the second width w2.It addition, this enforcement
Second contact site C2 of example and the Breadth Maximum of first conductive layer 111 overlapping region on third direction D3 are one
3rd width w3, and the first width w1 is also smaller than the 3rd width w3.By the design of this dot structure P, more may be used
Guarantee that the first contact site C1, the second contact site C2 have bigger contact area with oxide semiconductor layer 113 and (connect
Touch resistance relatively low), and then make thin film transistor (TFT) (dot structure P) have preferably electrical performance, make display quality
Preferably.
Referring again to shown in Fig. 1 D, the second insulating barrier 115 arranges and is covered on the second conductive layer 112, and electrode
116 are arranged on the second insulating barrier 115, and electrode 116 can be connected by a through hole H of the second insulating barrier 115
One of them of described contact site C1, C2.Wherein, the material of the second insulating barrier 115 can for example, organic material,
And it is for example and without limitation to perfluoroalkyl vinyl ether copolymer (Polyfluoroalkoxy, PFA), and electrode 116
Material can be such as indium tin oxide (ITO), indium-zinc oxide (IZO), aluminum zinc oxide (AZO), cadmium stannum oxygen
Compound (CTO), stannum oxide (SnO2) or the transparent conductive material such as zinc oxide (ZnO), do not limit.This reality
The electrode 116 executing example is a pixel electrode, and electrode 116 is arranged on the second insulating barrier 115, and it is exhausted to insert second
The first contact site C1 is connected in the through hole H of edge layer 115.
Additionally, shading rod 117 is arranged at the first side S1 of the first conductive layer 111, and through hole H correspondence is positioned at shading
Between rod 117 and cabling portion 1111.In this, shading rod 117 and the first conductive layer 111 can be commaterial,
And be that same technique makes, its purpose is to cover the liquid crystal molecule row of the turning point of electrode 116 (pixel electrode)
The abnormal light leakage phenomena caused of row.
Therefore, each scan line can be made respectively corresponding when multiple scan lines of array base palte 11 receive scan signal
The thin film transistor (TFT) conducting of dot structure P, and a data signal of every for correspondence one-row pixels is passed by multiple data wires
Deliver to the electrode 116 of respective pixel structure P, make electrode 116 can form a pressure differential with community electrode corresponding
Liquid crystal molecule, makes display device 1 picture capable of displaying image.
It addition, refer to shown in Fig. 1 E, it is another schematic diagram of display device 1 of the present invention.
The display device 1 of the present embodiment more can include a backlight module 14, and works as the light E that backlight module 14 sends
Sequentially through array base palte 11, display dielectric layer 13 with opposite substrate 12 time, can make display floater display color and
Form image.
It addition, refer to shown in Fig. 2, its be the present invention another implement the schematic diagram of dot structure Pa of aspect.
The dot structure P of dot structure Pa and Fig. 1 D primary difference is that, dot structure Pa does not arrange
One insulating barrier 114 so that the first contact site C1 and the second contact site C2 of the second conductive layer 112 are directly arranged at oxygen
The both sides of difference catalytic oxidation thing semiconductor layer 113 on compound semiconductor layer 113.
Additionally, the other technologies feature of dot structure Pa can refer to the similar elements of dot structure P, much more no longer to say
Bright.
It addition, please respectively refer to shown in Fig. 3 A to Fig. 3 E, its be respectively difference aspect of the present invention dot structure Pb～
The schematic diagram of Pf.In this, first conductive layer 111, second of A to Fig. 3 D display pixel structure Pb～Pf of Fig. 3
Conductive layer 112 and oxide semiconductor layer 113, do not show other film layer.
As shown in Figure 3A, unlike dot structure P, dot structure Pb correspondence is positioned at the first contact site C1
End (upside) completely overlapped with the cabling portion 1111 of the first conductive layer 111 on third direction D3.
It addition, as shown in Figure 3 B, unlike dot structure Pb, the wire portion of dot structure Pc 1121 with
Width on first conductive layer 111 overlapping D1 in the first direction on third direction D3 is bigger.
It addition, as shown in Figure 3 C, unlike dot structure Pb, dot structure Pd correspondence is positioned at the second contact
The end (downside) of portion C2 is also completely overlapped with the protuberance 1112 of the first conductive layer 111 on third direction D3.
It addition, as shown in Figure 3 D, unlike dot structure Pd, first conductive layer 111 of dot structure Pe
Protuberance 1112 D1 in the first direction on width relatively big, and oxide semiconductor layer 113 be shaped as L
Type.
It addition, as shown in FIGURE 3 E, the dot structure P of dot structure Pf and Fig. 1 D primary difference is that, pixel
Structure Pf only has cabling portion 1111, not protuberance 1112, and the width of cabling portion 1111 D2 in a second direction
The cabling portion 1111 of relatively dot structure P is big.
Additionally, the other technologies feature of dot structure Pb～Pf can refer to the similar elements of dot structure P, the most superfluous
State.
In sum, because, in the display device of the present invention, it is the most right that the second conductive layer of dot structure has two contact sites
The first side and second side in the cabling portion of the first conductive layer should be arranged at, and oxide semiconductor layer is arranged at the first conduction
Between layer and the second conductive layer, and its two ends contact those contact sites respectively.It addition, oxide semiconductor layer is along first
First width in direction is the most maximum with the overlay region of the first conductive layer less than one of them of described contact site
The second width.Therefore, by the design of dot structure of the present invention so that the size of dot structure is less and applies
In the product of higher resolution, and have preferably electrical performance and there is higher display quality.
The foregoing is only illustrative, rather than be restricted.Any spirit and scope without departing from the present invention, and to it
The equivalent modifications carried out or change, be intended to be limited solely by claims.
Claims (10)
1. a display device, it is characterised in that described display device includes:
Array basal plate, has at least one dot structure, and described dot structure comprises:
One first conductive layer, has the cabling portion extended along a first direction, and described cabling portion has one first
Side and one second side relative with described first side；
One second conductive layer, is arranged on described first conductive layer, and has two contact sites, described contact site
It is correspondingly arranged in described first side and described second side respectively；And
Monoxide semiconductor layer, is arranged between described first conductive layer and described second conductive layer, wherein,
The two ends of described oxide semiconductor layer contact described contact site respectively, and it is wide to have one first along described first direction
Degree, one of them of described contact site and described first conductive layer have an overlay region, and described overlay region is along described first
Direction has one second width of maximum, and described first width is less than described second width；
One opposite substrate；And
One display dielectric layer, is arranged between described array base palte and described opposite substrate.
Display device the most according to claim 1, it is characterised in that described first conductive layer also has one and dashes forward
Going out portion, described protuberance is extended protrusion by described second side in described cabling portion.
Display device the most according to claim 2, it is characterised in that described cabling portion and described contact site
One of them has and partly overlaps, described protuberance and described contact site wherein another has and partly overlaps.
Display device the most according to claim 1, it is characterised in that described oxide semiconductor layer has one
Connecting portion and be positioned at two ends of described connecting portion both sides, described connecting portion along the width of described first direction less than described
One of them of end is along the width of described first direction.
Display device the most according to claim 1, it is characterised in that described dot structure further includes one first
Insulating barrier, described first insulating barrier is arranged between described oxide semiconductor layer and described second conductive layer, and described
One insulating barrier has two openings corresponding to described contact site, and described contact site is via described opening and described oxide
Semiconductor layer contacts.
Display device the most according to claim 5, it is characterised in that one of them of described opening makes described
One of them end of oxide semiconductor layer is completely exposed.
Display device the most according to claim 6, it is characterised in that described first insulating barrier covers described oxygen
Wherein another end of compound semiconductor layer.
Display device the most according to claim 1, it is characterised in that described dot structure further includes one second
Insulating barrier and an electrode, described second insulating barrier is arranged on described second conductive layer, and described electrode is arranged at described
On two insulating barriers, and described electrode connects one of them of described contact site by a through hole of described second insulating barrier.
Display device the most according to claim 8, it is characterised in that described dot structure further includes a shading
Rod, described shading rod is arranged at described first side of described first conductive layer, and described through hole correspondence is positioned at described shading
Between excellent and described cabling portion.
Display device the most according to claim 9, it is characterised in that described second conductive layer has more along one
The wire portion that second direction extends, described wire portion and described contact site wherein another is connected, and described first party
To with described second direction substantial orthogonality.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410157272.6A CN118011691A (en) | 2015-04-30 | 2015-04-30 | Display device |
| CN201510214582.8A CN106200141B (en) | 2015-04-30 | 2015-04-30 | Display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510214582.8A CN106200141B (en) | 2015-04-30 | 2015-04-30 | Display device |
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| CN202410157272.6A Division CN118011691A (en) | 2015-04-30 | 2015-04-30 | Display device |
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| CN106200141B CN106200141B (en) | 2024-03-01 |
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| CN201510214582.8A Active CN106200141B (en) | 2015-04-30 | 2015-04-30 | Display device |
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| CN1479147A (en) * | 2002-08-27 | 2004-03-03 | Lg.������Lcd��ʽ���� | Matrix substrate of liquid crystal display device and its manufacturing method |
| US20040257489A1 (en) * | 2002-10-31 | 2004-12-23 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
| CN102483546A (en) * | 2009-09-08 | 2012-05-30 | 夏普株式会社 | Liquid crystal display device and method for manufacturing same |
| CN103676367A (en) * | 2012-09-06 | 2014-03-26 | 群康科技(深圳)有限公司 | Display panel and display device |
| US20140346496A1 (en) * | 2013-05-24 | 2014-11-27 | Samsung Electronics Co., Ltd. | Array substrate and method of manufacturing the same |
| CN204679743U (en) * | 2015-04-30 | 2015-09-30 | 群创光电股份有限公司 | Display device |
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2015
- 2015-04-30 CN CN202410157272.6A patent/CN118011691A/en active Pending
- 2015-04-30 CN CN201510214582.8A patent/CN106200141B/en active Active
Patent Citations (6)
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|---|---|---|---|---|
| CN1479147A (en) * | 2002-08-27 | 2004-03-03 | Lg.������Lcd��ʽ���� | Matrix substrate of liquid crystal display device and its manufacturing method |
| US20040257489A1 (en) * | 2002-10-31 | 2004-12-23 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
| CN102483546A (en) * | 2009-09-08 | 2012-05-30 | 夏普株式会社 | Liquid crystal display device and method for manufacturing same |
| CN103676367A (en) * | 2012-09-06 | 2014-03-26 | 群康科技(深圳)有限公司 | Display panel and display device |
| US20140346496A1 (en) * | 2013-05-24 | 2014-11-27 | Samsung Electronics Co., Ltd. | Array substrate and method of manufacturing the same |
| CN204679743U (en) * | 2015-04-30 | 2015-09-30 | 群创光电股份有限公司 | Display device |
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| CN106200141B (en) | 2024-03-01 |
| CN118011691A (en) | 2024-05-10 |
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