CN106191996A - A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof - Google Patents
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof Download PDFInfo
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- CN106191996A CN106191996A CN201610659266.6A CN201610659266A CN106191996A CN 106191996 A CN106191996 A CN 106191996A CN 201610659266 A CN201610659266 A CN 201610659266A CN 106191996 A CN106191996 A CN 106191996A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
The invention discloses a kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, set gradually the first coating, the second coating and the 3rd coating on the surface of crucible from inside to outside, then lay certain thickness sealing coat in bottom, enter polycrystalline silicon raw material；Will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus and process, then obtain melted silicon, cooling, pulverize, pickling, after drying, enter crystal growing stage；Enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, be passed through the argon mixed with water vapour and hydrogen, directional solidification simultaneously；Through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.Present invention process is simple to operate, scientific and reasonable, and production efficiency is high, it is possible to effectively boron, phosphorus, the content of metal impurities in polysilicon films, prepares complete polysilicon, and long crystalline substance misplaces less, crystal boundary is appropriate, improves many photothermal conversion rate.
Description
Technical field
The present invention relates to polycrystalline silicon preparing process field, be specifically related to a kind of efficiency light hot-cast socket polysilicon films and preparation thereof
Method.
Background technology
Photovoltaic industry is one of 21st century the most fastest-rising new high-tech industry.Polysilicon is global electronic
Industry and the foundation stone of photovoltaic industry, the solar cell properties manufactured with silicon materials is stable, the life-span is long, preferably realizes photo-thermal
The function converted, and cost is relatively low relative to other solaodes.In order to production cost is lower, the more preferable solar energy of performance
Battery, with industrial silicon (MG-Si) as raw material, utilizes metallurgical method to carry out refine to produce solar energy level silicon (SOG-Si).Too
Containing plurality of impurities in sun energy level silicon, wherein phosphorus, boron, the existence of metal impurities have a strong impact on the transformation efficiency of silicon solar cell
And stability.The metallurgy method of current domestic employing is long brilliant in using a large amount of silicon material to put into crucible, and the impurity content in crucible is
In silicon material more than 1000 times of impurity content, the impurity in crucible enters silicon ingot during ingot casting in a large number, thus introduces impurity
Cause secondary pollution, limit the conversion efficiency of polycrystal silicon cell.How to reduce the cost of solar energy polycrystalline silicon, reduce environment dirt
Dye, the energy consumption that reduces, raising boron, phosphorus, the remove impurity degree of metal impurities, be all widely studied problem.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of efficiency light hot-cast socket polysilicon films and preparation method thereof,
Can effectively boron, phosphorus, the content of metal impurities in polysilicon films, prepare complete polysilicon, long crystalline substance dislocation less, crystal boundary appropriate, carry
The conversion ratio of high polycrystal silicon cell.
For realizing object above, the present invention is achieved by the following technical programs:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the 3rd coating is coat of silicon carbide, at carborundum
Crystalline state silica flour coating is applied in coating；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and lays on sealing coat
One layer of broken silicon material, is then placed in polycrystalline silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.2-1.8 μm laser radiation treatment 20-25min under the conditions of 80-90A, 0.6-20ms, 1Hz, then controls described crucible
Inside forms incremental thermograde from bottom to top, keeps 6-10h, obtains melted silicon, and the velocity step ladder formula with 60-80 DEG C/h is cold
But obtain silicon ingot, be crushed to 60 mesh, carry out pickling, clean post-drying, obtain the first process material and then heat and make described polysilicon
Material is fusing into crystal growing stage；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1450-1500 DEG C keep 1-1.5h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Preferably, the thickness of the described silicon nitride coating in step (1) is 50-70um, and purity is more than 99.9%.
Preferably, the thickness of the described crystalline state silica flour coating in step (1) is 40-50um.
Preferably, the raw material of the described crystalline state silica flour coating in step (1) is crystalline state silica flour, putting down of this crystalline state silica flour
All particle diameters are 10-15um, and purity is more than 99.9%.
Preferably, the sealing coat described in described step (2) uses the purity compact massive material more than 99.9% equal
Even laying is formed, and the thickness of this sealing coat is 15-25mm.
Preferably, described compact massive material is silico briquette or carborundum or silicon nitride or aluminium nitride or quartz material.
The method have the benefit that
The present invention selects to arrange three discord carbon, pasc reactions from bottom to up, has good mechanical compatible coating with matrix,
The fusing point of three coatings successively decreases, it is simple to use method of impregnation be sequentially prepared, silicon boride, silicon nitride, carborundum be can firm attachment,
With the coating that matrix has close thermal coefficient of expansion, there is anti, make the advantage of the easy demoulding of silicon ingot, the first coating, second
Coating and the 3rd coating ensure that graphite crucible will not aoxidize in aerobic environment when temperature is higher；In electron beam melting process
In, first carrying out laser treatment, shallow-layer electrically active impurity, oxygen and carbon in molten silicon can be made gradually to separate out, under vacuum, laser irradiates and keeps away
Exempting to produce the smog being attached to molten silicon face, bottom-up thermograde makes saturated vapor pressure in molten silicon be higher than the impurity of silicon
The element evaporations such as phosphorus are removed, and the silicon ingot of staged cooling makes metal impurities be enriched in grain surface and crystal boundary space, after pulverizing
Metal impurities exposed, pickling can effectively remove major part elementary metal impurities；
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the enforcement of the present invention
Example, is clearly and completely described the technical scheme in the embodiment of the present invention.Based on the embodiment in the present invention, this area
The every other embodiment that those of ordinary skill is obtained under not making creative work premise, broadly falls into present invention protection
Scope.
Embodiment 1:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the thickness of silicon nitride coating is 50um, and purity is big
In 99.9%, the 3rd coating is coat of silicon carbide, and on coat of silicon carbide, applied thickness is the crystalline state silica flour coating of 40um, crystalline state
The raw material of silica flour coating is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is more than 99.9%；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and sealing coat uses purity big
Formation uniformly laid by compact massive material in 99.9%, and compact massive material is silico briquette or carborundum or silicon nitride or nitrogen
Change aluminum or quartz material, and the thickness of this sealing coat is 15mm, and on sealing coat, lay one layer of broken silicon material, be then placed in many
Crystal silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.2 μm laser radiation treatment 20min under the conditions of 80-A, 0.6ms, 1Hz, then control inside described crucible from bottom to top
Form the thermograde being incremented by, keep 6h, obtain melted silicon, cool down with the velocity step ladder formula of 60 DEG C/h and obtain silicon ingot, be crushed to
60 mesh, carry out pickling, clean post-drying, obtain the first process material and then heat and make described polycrystalline silicon material be fusing into long brilliant rank
Section；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1450 DEG C keep 1h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Embodiment 2:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the thickness of silicon nitride coating is 70um, and purity is big
In 99.9%, the 3rd coating is coat of silicon carbide, and on coat of silicon carbide, applied thickness is the crystalline state silica flour coating of 50um, crystalline state
The raw material of silica flour coating is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is more than 99.9%；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and sealing coat uses purity big
Formation uniformly laid by compact massive material in 99.9%, and compact massive material is silico briquette or carborundum or silicon nitride or nitrogen
Change aluminum or quartz material, and the thickness of this sealing coat is 25mm, and on sealing coat, lay one layer of broken silicon material, be then placed in many
Crystal silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.2 μm laser radiation treatment 20min under the conditions of 80A, 0.6ms, 1Hz, then control inside described crucible from bottom to top
Form the thermograde being incremented by, keep 6h, obtain melted silicon, cool down with the velocity step ladder formula of 80 DEG C/h and obtain silicon ingot, be crushed to
60 mesh, carry out pickling, clean post-drying, obtain the first process material and then heat and make described polycrystalline silicon material be fusing into long brilliant rank
Section；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1450 DEG C keep 1h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Embodiment 3:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the thickness of silicon nitride coating is 60um, and purity is big
In 99.9%, the 3rd coating is coat of silicon carbide, and on coat of silicon carbide, applied thickness is the crystalline state silica flour coating of 50um, crystalline state
The raw material of silica flour coating is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is more than 99.9%；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and sealing coat uses purity big
Formation uniformly laid by compact massive material in 99.9%, and compact massive material is silico briquette or carborundum or silicon nitride or nitrogen
Change aluminum or quartz material, and the thickness of this sealing coat is 25mm, and on sealing coat, lay one layer of broken silicon material, be then placed in many
Crystal silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.2 μm laser radiation treatment 20min under the conditions of 80A, 0.6ms, 1Hz, then control inside described crucible from bottom to top
Form the thermograde being incremented by, keep 8h, obtain melted silicon, cool down with the velocity step ladder formula of 70 DEG C/h and obtain silicon ingot, be crushed to
60 mesh, carry out pickling, clean post-drying, obtain the first process material and then heat and make described polycrystalline silicon material be fusing into long brilliant rank
Section；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1500 DEG C keep 1h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Embodiment 4:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the thickness of silicon nitride coating is 60um, and purity is big
In 99.9%, the 3rd coating is coat of silicon carbide, and on coat of silicon carbide, applied thickness is the crystalline state silica flour coating of 50um, crystalline state
The raw material of silica flour coating is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is more than 99.9%；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and sealing coat uses purity big
Formation uniformly laid by compact massive material in 99.9%, and compact massive material is silico briquette or carborundum or silicon nitride or nitrogen
Change aluminum or quartz material, and the thickness of this sealing coat is 25mm, and on sealing coat, lay one layer of broken silicon material, be then placed in many
Crystal silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.8 μm laser radiation treatment 25min under the conditions of 890A, 10ms, 1Hz, then control inside described crucible from bottom to top
Form the thermograde being incremented by, keep 8h, obtain melted silicon, cool down with the velocity step ladder formula of 60 DEG C/h and obtain silicon ingot, be crushed to
60 mesh, carry out pickling, clean post-drying, obtain the first process material and then heat and make described polycrystalline silicon material be fusing into long brilliant rank
Section；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1450 DEG C keep 1.5h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Embodiment 5:
A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof, comprises the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd on the surface of crucible from inside to outside
Coating, the first coating be silicon boride coating, the second coating be silicon nitride coating, the thickness of silicon nitride coating is 70um, and purity is big
In 99.9%, the 3rd coating is coat of silicon carbide, and on coat of silicon carbide, applied thickness is the crystalline state silica flour coating of 50um, crystalline state
The raw material of silica flour coating is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is more than 99.9%；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and sealing coat uses purity big
Formation uniformly laid by compact massive material in 99.9%, and compact massive material is silico briquette or carborundum or silicon nitride or nitrogen
Change aluminum or quartz material, and the thickness of this sealing coat is 20mm, and on sealing coat, lay one layer of broken silicon material, be then placed in many
Crystal silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use ripple
A length of 1.2-1.8 μm laser radiation treatment 25min under the conditions of 80A, 0.6-20ms, 1Hz, then controls described crucible internal certainly
The thermograde that lower and upper formation is incremented by, keeps 10h, obtains melted silicon, cools down with the velocity step ladder formula of 80 DEG C/h and obtains silicon ingot,
It is crushed to 60 mesh, carries out pickling, clean post-drying, obtain the first process material and then heat that to make described polycrystalline silicon material be fusing into long
The brilliant stage；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat
Measure downward radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through mixed with water vapour and hydrogen simultaneously
Argon, at 1500 DEG C keep 1.5h, directional solidification；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Above example only in order to technical scheme to be described, is not intended to limit；Although with reference to previous embodiment
The present invention is described in detail, it will be understood by those within the art that: it still can be to aforementioned each enforcement
Technical scheme described in example is modified, or wherein portion of techniques feature is carried out equivalent；And these amendment or
Replace, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. efficiency light hot-cast socket polysilicon films and preparation method thereof, it is characterised in that comprise the following steps:
(1) first provide a crucible, set gradually the first coating, the second coating and the 3rd painting on the surface of crucible from inside to outside
Layer, the first coating be silicon boride coating, the second coating be silicon nitride coating, the 3rd coating is coat of silicon carbide, is coated with at carborundum
Crystalline state silica flour coating is applied on layer；
(2) certain thickness sealing coat is laid in the bottom inside the crucible after above-mentioned coating, and lays one layer on sealing coat
Broken silicon material, is then placed in polycrystalline silicon raw material；
(3) will be equipped with the crucible of polycrystalline silicon raw material to be positioned over and be placed in the fusing stove with electron beam generating apparatus, use the wavelength to be
1.2-1.8 μm laser radiation treatment 20-25min under the conditions of 80-90A, 0.6-20ms, 1Hz, then controls inside described crucible
Form incremental thermograde from bottom to top, keep 6-10h, obtain melted silicon, cool down with the velocity step ladder formula of 60-80 DEG C/h
To silicon ingot, it is crushed to 60 mesh, carries out pickling, clean post-drying, obtain the first process material and then heat and make described polycrystalline silicon material melt
Change and enter crystal growing stage；
(4) enter and regulate the temperature of temperature-control heat couple after crystal growing stage and speed that sidepiece heat-insulation cage moves up, make heat to
Lower radiation and make molten silicon bottom-up growth under thermograde straight up, be passed through the argon mixed with water vapour and hydrogen simultaneously
Gas, keeps 1-1.5h, directional solidification at 1450-1500 DEG C；
(5) through annealing and being cooled into efficiency light hot-cast socket polysilicon films after described molten silicon has crystallized.
Efficiency light hot-cast socket polysilicon films the most according to claim 1 and preparation method thereof, it is characterised in that described step
Suddenly the thickness of the silicon nitride coating in (1) is 50-70um, and purity is more than 99.9%.
Efficiency light hot-cast socket polysilicon films the most according to claim 1 and preparation method thereof, it is characterised in that described step
Suddenly the thickness of the crystalline state silica flour coating in (1) is 40-50um.
Efficiency light hot-cast socket polysilicon films the most according to claim 1 and preparation method thereof, it is characterised in that described step
Suddenly the raw material of the crystalline state silica flour coating in (1) is crystalline state silica flour, and the mean diameter of this crystalline state silica flour is 10-15um, and purity is big
In 99.9%.
Efficiency light hot-cast socket polysilicon films the most according to claim 1 and preparation method thereof, it is characterised in that described step
Suddenly sealing coat described in (2) uses the purity compact massive material more than 99.9% uniformly to lay formation, and this sealing coat
Thickness is 15-25mm.
Efficiency light hot-cast socket polysilicon films the most according to claim 1 and preparation method thereof, it is characterised in that described cause
Close bulk material is silico briquette or carborundum or silicon nitride or aluminium nitride or quartz material.
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| CN201610659266.6A CN106191996A (en) | 2016-08-11 | 2016-08-11 | A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof |
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| CN201610659266.6A CN106191996A (en) | 2016-08-11 | 2016-08-11 | A kind of efficiency light hot-cast socket polysilicon films and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554752A (en) * | 2018-12-26 | 2019-04-02 | 赛维Ldk太阳能高科技(新余)有限公司 | Polycrystalline silicon ingot or purifying furnace, polycrystalline silicon ingot casting method and polycrystal silicon ingot |
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| CN101845666A (en) * | 2010-06-03 | 2010-09-29 | 王敬 | N-doped crystalline silicon and preparation method thereof |
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN105129804A (en) * | 2015-09-01 | 2015-12-09 | 中国化学工程第六建设有限公司 | Production technology for polycrystalline silicon |
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- 2016-08-11 CN CN201610659266.6A patent/CN106191996A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101845666A (en) * | 2010-06-03 | 2010-09-29 | 王敬 | N-doped crystalline silicon and preparation method thereof |
| CN103882517A (en) * | 2014-04-04 | 2014-06-25 | 阿特斯(中国)投资有限公司 | Preparation method of polycrystalline silicon ingot |
| CN105129804A (en) * | 2015-09-01 | 2015-12-09 | 中国化学工程第六建设有限公司 | Production technology for polycrystalline silicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109554752A (en) * | 2018-12-26 | 2019-04-02 | 赛维Ldk太阳能高科技(新余)有限公司 | Polycrystalline silicon ingot or purifying furnace, polycrystalline silicon ingot casting method and polycrystal silicon ingot |
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Application publication date: 20161207 |