CN106191545A - A kind of LED substrate heat sink material and production method thereof - Google Patents
A kind of LED substrate heat sink material and production method thereof Download PDFInfo
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- CN106191545A CN106191545A CN201610662631.9A CN201610662631A CN106191545A CN 106191545 A CN106191545 A CN 106191545A CN 201610662631 A CN201610662631 A CN 201610662631A CN 106191545 A CN106191545 A CN 106191545A
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- Prior art keywords
- heat sink
- sink material
- auxiliary agent
- led substrate
- gained
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- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 title claims abstract description 11
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 229910052902 vermiculite Inorganic materials 0.000 claims abstract description 10
- 235000019354 vermiculite Nutrition 0.000 claims abstract description 10
- 239000010455 vermiculite Substances 0.000 claims abstract description 10
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 9
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 9
- 239000012467 final product Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 6
- QMMJWQMCMRUYTG-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=C(Cl)C(Cl)=CC(Cl)=C1Cl QMMJWQMCMRUYTG-UHFFFAOYSA-N 0.000 claims description 4
- DUFCMRCMPHIFTR-UHFFFAOYSA-N 5-(dimethylsulfamoyl)-2-methylfuran-3-carboxylic acid Chemical compound CN(C)S(=O)(=O)C1=CC(C(O)=O)=C(C)O1 DUFCMRCMPHIFTR-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000706 filtrate Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 150000001669 calcium Chemical class 0.000 abstract description 2
- 239000004615 ingredient Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0005—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to light fixture heat sink material, being specifically related to a kind of LED substrate heat sink material and production method thereof, this heat sink material is made up of the raw material of following weight portion: aluminum 60 70, titanium dioxide 78, magnesium 8 10, nanometer silicon carbide 12 15, calcium fluoride 23, vermiculite power 68, styrene 13, auxiliary agent 45;The present invention combines the advantage of the compositions such as aluminum, magnesium, nanometer silicon carbide, has good heat conduction and insulating properties concurrently, and reduces production cost; perfluorinated calcium, phenylethene modified after vermiculite power; surface property is improved, and is more easy to compatible with other metal ingredient, and auxiliary agent can improve the sintering character of mixing material; shorten sintering time; the heat sink material compact structure that the present invention prepares, light weight insulate, and the capacity of heat transmission is strong; LED chip can be effectively protected, durable in use.
Description
Technical field
The present invention relates to light fixture heat sink material, be specifically related to a kind of LED substrate heat sink material and production method thereof.
Background technology
LED is referred to as forth generation light source, has the advantages such as energy-saving and environmental protection, safety, low energy consumption, high brightness, at daily life
In be widely used, the heat dispersion of LED lamp itself is most important, directly influence light fixture service life and illumination effect
Really.Existing LED heat sink material is mainly made up of the metal material such as aluminum, copper, there is cost in actual use and limits, insulate
The performance shortcoming such as not, the formula of the most necessary improvement material, make material reach the best radiating effect, improve lamp
The serviceability of tool, increases the service life.
Summary of the invention
It is an object of the invention to, it is provided that a kind of LED substrate heat sink material, reduce production cost, improve material
The purpose of heat dispersion, to achieve these goals, the technical solution used in the present invention is as follows:
A kind of LED substrate heat sink material, it is characterised in that material of the present invention is made up of the raw material of following weight portion: aluminum
60-70, titanium dioxide 7-8, magnesium 8-10, nanometer silicon carbide 12-15, calcium fluoride 2-3, vermiculite power 6-8, styrene 1-3, auxiliary agent 4-5.
Described auxiliary agent is made up of the raw material of following weight portion: butyl stearate 4-5, modified boccaro powder 15-18, zirconium acetate
4-5, phosphotungstic acid 1-2, iron powder 5-8, the preparation method of this auxiliary agent is: is first dissolved in appropriate water by phosphotungstic acid, is configured to concentration
For the aqueous solution of 4-5%, and being put into by modification boccaro powder in solution, dispersed with stirring filters, in being washed to after uniformly soaking 8-10h
Being dried after property, gained material mixes with other residual components, and is heated to 45-55 DEG C, is cooled to after constant temperature dispersed with stirring 2-3h
Room temperature, then material is ground to form 450-500 mesh fine powder, to obtain final product;
Described LED substrate heat sink material, its production method is as follows:
(1) calcium fluoride is dissolved in the water of 15 times of its weight portions, subsequently vermiculite power is put in solution, soak 8-
Filtering after 10h, filtrate is washed to cold drying after neutrality, adds styrene, standby after mixed grinding 2-3h;
(2) after step (1) gained material being mixed 2-3h with the stirring of other residual components, in input ball mill at ball milling
Reason, makes 10000-hole sieve surplus≤0.05% of gained material;
(3) material of step (2) gained is sent in mould compressing, under nitrogen atmosphere with the temperature of 600-650 DEG C
After degree sintering 5-6h, through naturally cooling to room temperature and get final product.
It is an advantage of the current invention that: relatively conventional aluminum heat exchanging material combines aluminum, magnesium, nanometer silicon carbide etc. on raw material and becomes
Point advantage, have good heat conduction and insulating properties concurrently, and reduce production cost, perfluorinated calcium, phenylethene modified after trematodiasis
Stone powder, surface property is improved, and is more easy to compatible with other metal ingredient, and auxiliary agent can improve the sintering character of mixing material,
Shortening sintering time, the heat sink material compact structure that the present invention prepares, light weight insulate, and the capacity of heat transmission is strong, can effectively protect
Protect LED chip, durable in use.
Detailed description of the invention
Embodiment 1:
The present embodiment LED heat sink material is made up of following raw material: aluminum 70, titanium dioxide 8, magnesium 10, nanometer silicon carbide
15, calcium fluoride 3, vermiculite power 8, styrene 3, auxiliary agent 5.
Described auxiliary agent is made up of the raw material of following weight portion: butyl stearate 5, modified boccaro powder 18, zirconium acetate 5, phosphorus
Wolframic acid 2, iron powder 8, the preparation method of this auxiliary agent is: be first dissolved in appropriate water by phosphotungstic acid, be configured to concentration be 5% water-soluble
Liquid, and modification boccaro powder is put in solution, dispersed with stirring filters after uniformly soaking 10h, is dried, gains after being washed to neutrality
Material mixes with other residual components, and is heated to 45-55 DEG C, is cooled to room temperature, then is ground by material after constant temperature dispersed with stirring 3h
Become 500 mesh fine powders, to obtain final product;
Described LED substrate heat sink material, its production method is as follows:
(1) calcium fluoride is dissolved in the water of 15 times of its weight portions, subsequently vermiculite power is put in solution, soak 10h
Rear filtration, filtrate is washed to cold drying after neutrality, adds styrene, standby after mixed grinding 3h;
(2), after step (1) gained material being mixed 3h with the stirring of other residual components, ball-milling treatment in ball mill is put into,
Make 10000-hole sieve surplus≤0.05% of gained material;
(3) material of step (2) gained is sent in mould compressing, under nitrogen atmosphere with the temperature of 600-650 DEG C
After degree sintering 6h, through naturally cooling to room temperature and get final product.
The heat conduction system of the heat sink material more conventional LED heat sink material more conventional aluminum base heat sink material obtained by the present embodiment
Number raising 23.5%, thermal diffusivity improves 26.8%, and heat balance time averagely shortens 165min, and light fixture improves service life
25.6%.
Embodiment 2:
The present embodiment LED heat sink material is made up of following raw material: aluminum 60, titanium dioxide 7, magnesium 8, nanometer silicon carbide
12, calcium fluoride 2, vermiculite power 6, styrene 1, auxiliary agent 4.
Described auxiliary agent is made up of the raw material of following weight portion: butyl stearate 4, modified boccaro powder 15, zirconium acetate 4, phosphorus
Wolframic acid 1, iron powder 5, the preparation method of this auxiliary agent is: be first dissolved in appropriate water by phosphotungstic acid, be configured to concentration be 4% water-soluble
Liquid, and modification boccaro powder is put in solution, dispersed with stirring filters after uniformly soaking 8h, is dried, gains after being washed to neutrality
Material mixes with other residual components, and is heated to 45-55 DEG C, is cooled to room temperature, then is ground by material after constant temperature dispersed with stirring 2h
Become 450 mesh fine powders, to obtain final product;
Described LED substrate heat sink material, its production method is as follows:
(1) calcium fluoride is dissolved in the water of 15 times of its weight portions, subsequently vermiculite power is put in solution, after soaking 8h
Filtering, filtrate is washed to cold drying after neutrality, adds styrene, standby after mixed grinding 2h;
(2), after step (1) gained material being mixed 2h with the stirring of other residual components, ball-milling treatment in ball mill is put into,
Make 10000-hole sieve surplus≤0.05% of gained material;
(3) material of step (2) gained is sent in mould compressing, under nitrogen atmosphere with the temperature of 600-650 DEG C
After degree sintering 5h, through naturally cooling to room temperature and get final product.
The heat conduction system of the heat sink material more conventional LED heat sink material more conventional aluminum base heat sink material obtained by the present embodiment
Number raising 23.6%, thermal diffusivity improves 26.8%, and heat balance time averagely shortens 163min, and light fixture improves service life
25.5%.
Claims (1)
1. a LED substrate heat sink material, it is characterised in that this material is made up of the raw material of following weight portion: aluminum 60-70,
Titanium dioxide 7-8, magnesium 8-10, nanometer silicon carbide 12-15, calcium fluoride 2-3, vermiculite power 6-8, styrene 1-3, auxiliary agent 4-5;
Described auxiliary agent is made up of the raw material of following weight portion: butyl stearate 4-5, modified boccaro powder 15-18, zirconium acetate 4-5,
Phosphotungstic acid 1-2, iron powder 5-8, the preparation method of this auxiliary agent is: be first dissolved in appropriate water by phosphotungstic acid, and being configured to concentration is 4-
The aqueous solution of 5%, and modification boccaro powder is put in solution, dispersed with stirring filters, after being washed to neutrality after uniformly soaking 8-10h
Being dried, gained material mixes with other residual components, and is heated to 45-55 DEG C, is cooled to room temperature after constant temperature dispersed with stirring 2-3h,
Material is ground to form 450-500 mesh fine powder again, to obtain final product;
Described LED substrate heat sink material, its production method is as follows:
(1) calcium fluoride is dissolved in the water of 15 times of its weight portions, subsequently vermiculite power is put in solution, after soaking 8-10h
Filtering, filtrate is washed to cold drying after neutrality, adds styrene, standby after mixed grinding 2-3h;
(2), after step (1) gained material being mixed 2-3h with the stirring of other residual components, put into ball-milling treatment in ball mill, make
10000-hole sieve surplus≤0.05% of gained material;
(3) material of step (2) gained is sent in mould compressing, burn with the temperature of 600-650 DEG C under nitrogen atmosphere
After knot 5-6h, through naturally cooling to room temperature and get final product.
Priority Applications (1)
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CN201610662631.9A CN106191545A (en) | 2016-08-11 | 2016-08-11 | A kind of LED substrate heat sink material and production method thereof |
Applications Claiming Priority (1)
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CN201610662631.9A CN106191545A (en) | 2016-08-11 | 2016-08-11 | A kind of LED substrate heat sink material and production method thereof |
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CN106191545A true CN106191545A (en) | 2016-12-07 |
Family
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CN201610662631.9A Pending CN106191545A (en) | 2016-08-11 | 2016-08-11 | A kind of LED substrate heat sink material and production method thereof |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104087796A (en) * | 2014-07-08 | 2014-10-08 | 安徽艳阳电气集团有限公司 | Antirust and high-strength aluminum-based composite heat radiating material for LED |
CN104087792A (en) * | 2014-07-08 | 2014-10-08 | 安徽艳阳电气集团有限公司 | Insulating temperature-resisting aluminum-based composite heat dispersing material for light emitting diode (LED) |
CN104141067A (en) * | 2014-07-07 | 2014-11-12 | 马鞍山市万鑫铸造有限公司 | Aluminum-based composite heat radiating material containing mesoporous molecular sieves for LED (Light Emitting Diode) |
CN104141069A (en) * | 2014-07-07 | 2014-11-12 | 马鞍山市万鑫铸造有限公司 | Aluminum-based composite heat radiating material with low heat resistance for LED (Light Emitting Diode) |
CN104164594A (en) * | 2014-07-07 | 2014-11-26 | 马鞍山市万鑫铸造有限公司 | A temperature-resistant anti-imbibition aluminum-based composite heat dissipation material used for LED lamps |
CN104532073A (en) * | 2014-12-26 | 2015-04-22 | 合肥瑞华电子科技有限责任公司 | Aluminum-based composite radiating material for high strength LED |
-
2016
- 2016-08-11 CN CN201610662631.9A patent/CN106191545A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104141067A (en) * | 2014-07-07 | 2014-11-12 | 马鞍山市万鑫铸造有限公司 | Aluminum-based composite heat radiating material containing mesoporous molecular sieves for LED (Light Emitting Diode) |
CN104141069A (en) * | 2014-07-07 | 2014-11-12 | 马鞍山市万鑫铸造有限公司 | Aluminum-based composite heat radiating material with low heat resistance for LED (Light Emitting Diode) |
CN104164594A (en) * | 2014-07-07 | 2014-11-26 | 马鞍山市万鑫铸造有限公司 | A temperature-resistant anti-imbibition aluminum-based composite heat dissipation material used for LED lamps |
CN104087796A (en) * | 2014-07-08 | 2014-10-08 | 安徽艳阳电气集团有限公司 | Antirust and high-strength aluminum-based composite heat radiating material for LED |
CN104087792A (en) * | 2014-07-08 | 2014-10-08 | 安徽艳阳电气集团有限公司 | Insulating temperature-resisting aluminum-based composite heat dispersing material for light emitting diode (LED) |
CN104532073A (en) * | 2014-12-26 | 2015-04-22 | 合肥瑞华电子科技有限责任公司 | Aluminum-based composite radiating material for high strength LED |
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