CN106190616A - The caustic solution of frequency chip - Google Patents
The caustic solution of frequency chip Download PDFInfo
- Publication number
- CN106190616A CN106190616A CN201610549209.2A CN201610549209A CN106190616A CN 106190616 A CN106190616 A CN 106190616A CN 201610549209 A CN201610549209 A CN 201610549209A CN 106190616 A CN106190616 A CN 106190616A
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- China
- Prior art keywords
- frequency chip
- corrosion
- caustic solution
- frequency
- minutes
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- 239000003518 caustics Substances 0.000 title claims abstract description 19
- 238000005260 corrosion Methods 0.000 claims abstract description 110
- 230000007797 corrosion Effects 0.000 claims abstract description 110
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 238000003756 stirring Methods 0.000 claims description 25
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 20
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 20
- 229910021426 porous silicon Inorganic materials 0.000 claims description 16
- -1 naphthol compound Chemical class 0.000 claims description 15
- 238000005189 flocculation Methods 0.000 claims description 13
- 230000016615 flocculation Effects 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002608 ionic liquid Substances 0.000 claims description 12
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 10
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 claims description 10
- VZOPRCCTKLAGPN-ZFJVMAEJSA-L potassium;sodium;(2r,3r)-2,3-dihydroxybutanedioate;tetrahydrate Chemical compound O.O.O.O.[Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VZOPRCCTKLAGPN-ZFJVMAEJSA-L 0.000 claims description 10
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 10
- 229940074446 sodium potassium tartrate tetrahydrate Drugs 0.000 claims description 10
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 claims description 9
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 8
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 claims description 8
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 7
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 7
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 5
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 5
- PQUXFUBNSYCQAL-UHFFFAOYSA-N 1-(2,3-difluorophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(F)=C1F PQUXFUBNSYCQAL-UHFFFAOYSA-N 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 229940047670 sodium acrylate Drugs 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- BRXCDHOLJPJLLT-UHFFFAOYSA-N butane-2-sulfonic acid Chemical compound CCC(C)S(O)(=O)=O BRXCDHOLJPJLLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 14
- 238000004140 cleaning Methods 0.000 abstract description 9
- 150000002632 lipids Chemical class 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 238000007603 infrared drying Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 229920002125 Sokalan® Polymers 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004584 polyacrylic acid Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 description 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- CKRORYDHXIRZCH-UHFFFAOYSA-N phosphoric acid;dihydrate Chemical class O.O.OP(O)(O)=O CKRORYDHXIRZCH-UHFFFAOYSA-N 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
- C11D1/721—End blocked ethers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
- C11D3/075—Phosphates, including polyphosphates in admixture with ethers of polyoxyalkylenes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/168—Organometallic compounds or orgometallic complexes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/201—Monohydric alcohols linear
- C11D3/2013—Monohydric alcohols linear fatty or with at least 8 carbon atoms in the alkyl chain
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/2034—Monohydric alcohols aromatic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/20—Water-insoluble oxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/267—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/013—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for obtaining desired frequency or temperature coefficient
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses the caustic solution of a kind of frequency chip, first with high-efficient cleaning washing liquid, frequency chip clean surface is processed, remove lipid, microbiology class spot, lay good basis for corrosion；The corrosion system that redesign character is gentle, in conjunction with spin etching technique, effectively corrodes frequency chip, and corrosion rate brings up to 0.3 μm/min, and far above existing 0.18 μm/min, the frequency chip frequency departure scope after corrosion drops to ± 10KHz from ± 50KHz.
Description
Technical field
The invention belongs to frequency chip technology of preparing, be specifically related to the caustic solution of a kind of frequency chip.
Background technology
Nowadays electronic product function get more and more, this just requires that the precision of crystal oscillator improves constantly, client for
The frequency departure scope of frequency chip is more and more stricter.If frequency departure scope is the biggest after product corrosion, the bad of generation is got over
Many.After the corrosion of frequency chip, frequency departure scope is mainly relevant, due to every frequency chip with corrosion rate, corrosion system composition
Density is different, and the frequency departure scope after the fastest then corrosion of corrosion rate is the least, otherwise, the biggest.Existing caustic solution master
If being put into by frequency chip in Teflon Netcom, corrosion system carries out the corrosion that fluctuates.Although in the process of fluctuating
Medium frequency sector-meeting is scattered, but the degree scattered insufficient, if if now accelerating corrosion rate, owing to frequency chip has slight
Overlapping phenomenon, the corrosion that can cause some frequency chip is uneven, thus causes frequency chip surface to produce thickness difference, directly affects visitor
The bad characteristic such as CI, the DLD at family；If corrosion rate is low, although thickness difference will not be formed, but frequency chip after corrosion can be caused
Frequency departure is excessive.If frequency chip surface has dirty, even the least the lightest dirty, also influence whether the essence of consumer product
Degree, frequency chip is fluctuated by existing corrosion, and such frequency chip cannot remove frequency during shake the most completely
The foreign body on sheet surface, dried corrosion system can remain in the surface of frequency chip, is formed dirty.
Summary of the invention
It is an object of the invention to disclose the caustic solution of a kind of frequency chip, prepare corrosion system system, coordinate rotary corruption
Etching technique, corrosion rate brings up to 0.3 μm/min, far above existing 0.18 μm/min, the frequency chip frequency departure model after corrosion
Enclose and drop to ± 10KHz from ± 50KHz.
To achieve the above object of the invention, the technical solution used in the present invention is: the caustic solution of a kind of frequency chip, including with
Lower step:
(1) frequency chip is inserted in cleanout fluid, clean 10～15 minutes；Then insert in ethanol and soak 1～2 minute, infrared baking
Dry, the frequency chip after being cleaned；Described cleanout fluid is by naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, poly-
Sodium acrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, water form；
(2) sodium peroxide is added to the water, after mixing, adds acetic acid；Ionic liquid is added after stirring 3 minutes；Stirring 15～20
Add 2,2'-Azobis(2,4-dimethylvaleronitrile) after minute, after stirring 3～5 minutes, add sodium potassium tartrate tetrahydrate, add after stirring 4～6 minutes
Porous silicon ball, stirring obtains corrosion system；The mean diameter of described porous silicon ball is 620 nanometers；The chemistry of described ionic liquid
Structural formula is as follows:
(3) corrosion system is added in corrosion bucket, be subsequently adding frequency chip, spin etching system；Wadding is added after 3～3.5 minutes
Lime set, continues spin etching system, the frequency chip after being corroded, i.e. completes the corrosion of frequency chip；Described flocculation liquid is by propylene
Sour, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamide-2-methylpro panesulfonic acid, hexadecyltrimethylammonium chloride, water are mixed
After conjunction, within 1～1.5 hour, obtain in 70 DEG C of reactions.
In technique scheme, in step (1), cleaning is the important foundation of frequency chip corrosion, if cleaning halfway
Words, the spot of residual, especially oils, microbiology class are to extreme influence corrosion system activity, and can cause frequency chip table
Face corrosion is uneven.Naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, sodium polyacrylate, ten hydrogen phosphate dihydrates
Disodium, 2-mercaptobenzothiazole, the mass ratio of water are 3:5:8:3:6:3:100；Integral cleaning liquid is alkalescence, can effectively remove
Frequency chip surface blot, especially with the addition of naphthol compound, thiazolium compounds effective especially to removing microorganism system, crucial its
Activity is not affected by other compositions, is added the occlusion activity of alkaline system, high score by tert-butyl lithium, organosiloxane compound
The polyacrylic compounds of son can remove the oils spot on frequency chip surface with longer chain forms；In conjunction with ethanol post processing,
Infrared drying, it is to avoid baking oven for heating is dried the damage to frequency chip, such that it is able to obtain the frequency chip of cleaning.
In technique scheme, in step (2), corrosion system corrosivity is gentle, and corrosive environment is gentle, can overcome tradition
The impact that frequency chip is caused by strong acid and strong base；In conjunction with etching process, it is adaptable to the corrosion requirement of frequency chip, the frequency chip after corrosion
Frequency departure scope drops to ± 10KHz from ± 50KHz, additionally, utilize ionic liquid (aqueous systems) recuperable characteristic, rotten
Erosion system can recycle.Frequency chip is mainly put in Teflon Netcom by existing method, carry out in corrosion system on
Lower shake corrosion, corrosion system mostly is strong acid, alkali system, otherwise can not corrode frequency chip, and corrosion efficiency is the most relatively low simultaneously
0.18μm/min；The present invention preparation corrosion system warm in nature and, but can corrosion effective to frequency chip, add ionic liquid with
2,2'-Azobis(2,4-dimethylvaleronitrile) can give full play to corrosion activity, utilizes nanometer porous silicon ball to increase the frictional force on frequency chip surface, carries
The occlusion ability of high corrosive liquid, silicon ball matter is soft simultaneously, does not results in frequency chip damage.Preferably, sodium peroxide, acetic acid, ion
Liquid, 2,2'-Azobis(2,4-dimethylvaleronitrile), sodium potassium tartrate tetrahydrate, porous silicon ball, the mass ratio of water are 8:12:8:1:11:1:100.
In technique scheme, in step (3), the height of corrosion system is the 55～65% of corrosion bucket height, not only prevents
Corrosion system spills, and mainly frequency chip is produced certain revolving force so that it is blade separately and is suspended in corrosion system；
The technique using rotation mode corrosion, changes by existing shake corrosion as the mode of spin etching into, makes corrosion system exist by rotation
Corrosion bucket forms whirlpool, utilizes the centrifugal force of whirlpool sufficiently to be scattered by frequency chip, do not have overlapping phenomenon, improve corrosion speed
Also the corrosion not resulting in frequency chip after degree is uneven, and can be substantially reduced the frequency departure scope after corrosion, overcomes existing
Technology corrosion thickness is uneven or the biggest defect of frequency error after corrosion.
In technique scheme, the mode of spin etching system can be that magnetic force rotates, and such as arranges in corrosion bottom of the barrel
Magnetic rotor, is placed in corrosion bucket on magnetic disk, is rotated by rotor and drives corrosion system to rotate, prevents frequency chip from having interference,
Macropore filter screen can be set in bucket bottom to intercept magnetic rotor and frequency chip；Can also be that machinery rotates, such as will corrode bucket
Insert in rotating shaft, rotating shaft, thus drive corrosion bucket to rotate, and then barrel internal corrosion system is rotated, it is also possible to will corrosion
Bucket is placed on rotating disk, drives corrosion bucket to rotate by turntable rotation, and then barrel internal corrosion system is rotated；Can also be for blowing
Rotating, best embody the creativeness of the present invention, arrange air inlet pipe in corrosion bucket lower sidewall, air inlet pipe connects air pump, thus can
To blow to air-flow corrode in bucket, corrosion system is promoted to produce circumferential movement, thus spin etching system, drive frequency chip to turn
Dynamic, this mode can reach to corrode uniform effect, and frequency chip will not be produced damage.
In technique scheme, in flocculation liquid, acrylic acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamido-2-
Methyl propane sulfonic acid, hexadecyltrimethylammonium chloride, water quality are than for 6:2:4:3:100；The corrosion of frequency chip starts quickly, by
Step is set level slow, in order to avoid the erosion interference to frequency chip, improves the efficiency of corrosion system simultaneously, and improves corrosion system
Recycling degree, the present invention uses flocculation liquid, early stage corrode after add, be effectively improved corrosion efficiency and improve corrosion effect
Really.
In technique scheme, the final etching time of frequency chip designs according to the frequency requirement to frequency chip, adds
Corrosion system quality 0.8～1% flocculation liquid after, according to different product requirement, select different end etching times.Preferably rotten
Erosion bucket is cylindrical, prevents frequency chip from damaging, and corrodes more uniform, improves product yield.
Frequency chip clean surface is processed by the present invention first with high-efficient cleaning washing liquid, removes lipid, microbiology class spot, for
Good basis is laid in corrosion；The corrosion system that redesign character is gentle, in conjunction with spin etching technique, effectively carries out corruption to frequency chip
Erosion, corrosion rate brings up to 0.3 μm/min, far above existing 0.18 μm/min, the frequency chip frequency departure scope after corrosion from
± 50KHz drops to ± 10KHz.
Detailed description of the invention
Embodiment one
The caustic solution of a kind of frequency chip, comprises the following steps:
(1) frequency chip is inserted in cleanout fluid, clean 15 minutes；Then insert in ethanol and soak 1 minute, infrared drying, obtain
Frequency chip after cleaning；Described cleanout fluid is by naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, polyacrylic acid
Sodium, disodium hydrogen phosphate, 2-mercaptobenzothiazole, water form；Naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxy
Vinyl Ether, sodium polyacrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, the mass ratio of water are 3:5:8:3:6:3:
100。
(2) sodium peroxide is added to the water, after mixing, adds acetic acid；Ionic liquid is added after stirring 3 minutes；Stirring 15
Add 2,2'-Azobis(2,4-dimethylvaleronitrile) after minute, after stirring 5 minutes, add sodium potassium tartrate tetrahydrate, after stirring 4 minutes, add porous silicon
Ball, stirring obtains corrosion system；The mean diameter of described porous silicon ball is 620 nanometers；Sodium peroxide, acetic acid, ionic liquid, idol
The different heptonitrile of nitrogen two, sodium potassium tartrate tetrahydrate, porous silicon ball, the mass ratio of water are 8:12:8:1:11:1:100.
(3) corrosion system is added in corrosion bucket, be subsequently adding frequency chip, spin etching system；Add after 3.5 minutes
The flocculation liquid of corrosion system quality 0.8%, continues spin etching system, the frequency chip after being corroded, i.e. completes the corruption of frequency chip
Erosion；Magnetic rotor is set in corrosion bottom of the barrel, corrosion bucket is placed on magnetic disk, rotated by rotor and drive corrosion system to revolve
Turn, prevent frequency chip from having interference, macropore filter screen is set in bucket bottom to intercept magnetic rotor and frequency chip；Described flocculation liquid is by third
Olefin(e) acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamide-2-methylpro panesulfonic acid, hexadecyltrimethylammonium chloride, water
After mixing, within 1.5 hours, obtain in 70 DEG C of reactions；Acrylic acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamido-2-first
Base propane sulfonic acid, hexadecyltrimethylammonium chloride, water quality are than for 6:2:4:3:10.
Embodiment two
The caustic solution of a kind of frequency chip, comprises the following steps:
(1) frequency chip is inserted in cleanout fluid, clean 10 minutes；Then insert in ethanol and soak 2 minutes, infrared drying, obtain
Frequency chip after cleaning；Described cleanout fluid is by naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, polyacrylic acid
Sodium, disodium hydrogen phosphate, 2-mercaptobenzothiazole, water form；Naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxy
Vinyl Ether, sodium polyacrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, the mass ratio of water are 3:5:8:3:6:3:
100。
(2) sodium peroxide is added to the water, after mixing, adds acetic acid；Ionic liquid is added after stirring 3 minutes；Stirring 20
Add 2,2'-Azobis(2,4-dimethylvaleronitrile) after minute, after stirring 5 minutes, add sodium potassium tartrate tetrahydrate, after stirring 4 minutes, add porous silicon
Ball, stirring obtains corrosion system；The mean diameter of described porous silicon ball is 620 nanometers；Sodium peroxide, acetic acid, ionic liquid, idol
The different heptonitrile of nitrogen two, sodium potassium tartrate tetrahydrate, porous silicon ball, the mass ratio of water are 8:12:8:1:11:1:100.
(3) corrosion system is added in corrosion bucket, be subsequently adding frequency chip, spin etching system；Corrosion bucket is placed in and turns
On dish, drive corrosion bucket to rotate by turntable rotation, and then barrel internal corrosion system is rotated；Corrosion system is added after 3 minutes
The flocculation liquid of quality 1%, continues spin etching system, the frequency chip after being corroded, i.e. completes the corrosion of frequency chip；In corrosion
Bottom of the barrel arranges magnetic rotor, is placed on magnetic disk by corrosion bucket, is rotated by rotor and drives corrosion system to rotate, prevents frequency
Sheet has interference, arranges macropore filter screen in bucket bottom to intercept magnetic rotor and frequency chip；Described flocculation liquid by acrylic acid, double (2,
3-epoxy radicals cyclopenta) ether, 2-acrylamide-2-methylpro panesulfonic acid, hexadecyltrimethylammonium chloride, water mixing after, in
70 DEG C of reactions obtain for 1 hour；Acrylic acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamide-2-methylpro panesulfonic acid, ten
Six alkyl trimethyl ammonium chlorides, water quality are than for 6:2:4:3:10.
Embodiment three
The caustic solution of a kind of frequency chip, comprises the following steps:
(1) frequency chip is inserted in cleanout fluid, clean 12 minutes；Then insert in ethanol and soak 2 minutes, infrared drying, obtain
Frequency chip after cleaning；Described cleanout fluid is by naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, polyacrylic acid
Sodium, disodium hydrogen phosphate, 2-mercaptobenzothiazole, water form；Naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxy
Vinyl Ether, sodium polyacrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, the mass ratio of water are 3:5:8:3:6:3:
100。
(2) sodium peroxide is added to the water, after mixing, adds acetic acid；Ionic liquid is added after stirring 3 minutes；Stirring 18
Add 2,2'-Azobis(2,4-dimethylvaleronitrile) after minute, after stirring 5 minutes, add sodium potassium tartrate tetrahydrate, after stirring 4 minutes, add porous silicon
Ball, stirring obtains corrosion system；The mean diameter of described porous silicon ball is 620 nanometers；Sodium peroxide, acetic acid, ionic liquid, idol
The different heptonitrile of nitrogen two, sodium potassium tartrate tetrahydrate, porous silicon ball, the mass ratio of water are 8:12:8:1:11:1:100.
(3) corrosion system is added in corrosion bucket, be subsequently adding frequency chip, spin etching system；Under corrosion bucket sidewall
Portion arranges air inlet pipe, and air inlet pipe connects air pump, such that it is able to blow to air-flow corrode in bucket, promotes corrosion system to produce circumference fortune
Dynamic, thus spin etching system, drive frequency chip to rotate, this mode can reach to corrode uniform effect, and will not be to frequency
Rate sheet produces damage；Add the flocculation liquid of corrosion system quality 0.8% after 3 minutes, continue spin etching system, after being corroded
Frequency chip, i.e. complete the corrosion of frequency chip；Magnetic rotor is set in corrosion bottom of the barrel, corrosion bucket is placed on magnetic disk, logical
Cross rotor and rotate drive corrosion system rotation, prevent frequency chip from having interference, macropore filter screen is set in bucket bottom and turns to intercept magnetic force
Son and frequency chip；Described flocculation liquid is by acrylic acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamido-2-methyl-prop sulphur
After acid, hexadecyltrimethylammonium chloride, water mixing, within 1 hour, obtain in 70 DEG C of reactions；Acrylic acid, double (2,3-epoxy basic ring penta
Base) ether, 2-acrylamide-2-methylpro panesulfonic acid, hexadecyltrimethylammonium chloride, water quality is than for 6:2:4:3:10.
The present invention designs the corrosion system that character is gentle, in conjunction with spin etching technique, effectively corrodes frequency chip, rotten
Erosion speed brings up to 0.3 μm/min, far above existing 0.18 μm/min, the frequency chip frequency departure scope after corrosion from ±
50KHz drops to ± 10KHz.
Claims (9)
1. a caustic solution for frequency chip, comprises the following steps:
(1) frequency chip is inserted in cleanout fluid, clean 10～15 minutes；Then insert in ethanol and soak 1～2 minute, infrared baking
Dry, the frequency chip after being cleaned；Described cleanout fluid is by naphthol compound, tert-butyl lithium, isomerous tridecanol polyoxyethylene ether, poly-
Sodium acrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, water form；
(2) sodium peroxide is added to the water, after mixing, adds acetic acid；Ionic liquid is added after stirring 3 minutes；Stirring 15～20
Add 2,2'-Azobis(2,4-dimethylvaleronitrile) after minute, after stirring 3～5 minutes, add sodium potassium tartrate tetrahydrate, add after stirring 4～6 minutes
Porous silicon ball, stirring obtains corrosion system；The mean diameter of described porous silicon ball is 620 nanometers；The chemistry of described ionic liquid
Structural formula is as follows:
(3) being added by corrosion system in corrosion bucket, the height of corrosion system is the 55～65% of corrosion bucket height, is subsequently adding frequency
Rate sheet, spin etching system；Addition flocculation liquid after 3～3.5 minutes, continuation spin etching system, the frequency chip after being corroded,
I.e. complete the corrosion of frequency chip；Described flocculation liquid is by acrylic acid, double (2,3-epoxy radicals cyclopenta) ether, 2-acrylamido-2-
After the mixing of methyl propane sulfonic acid, hexadecyltrimethylammonium chloride, water, within 1～1.5 hour, obtain in 70 DEG C of reactions.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: in step (1), naphthol compound, tertiary fourth
Base lithium, isomerous tridecanol polyoxyethylene ether, sodium polyacrylate, disodium hydrogen phosphate, 2-mercaptobenzothiazole, the quality of water
Ratio is 3:5:8:3:6:3:100.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: in step (2), sodium peroxide, acetic acid, from
Sub-liquid, 2,2'-Azobis(2,4-dimethylvaleronitrile), sodium potassium tartrate tetrahydrate, porous silicon ball, the mass ratio of water are 8:12:8:1:11:1:100.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: in step (3), the height of corrosion system is
The 55～65% of corrosion bucket height.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: the mode of spin etching system is magnetic force rotation
Turn.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: the mode of spin etching system is machinery rotation
Turn.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: the mode of spin etching system is rotation of blowing
Turn.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: acrylic acid, double (2,3-epoxy basic rings penta
Base) ether, 2-acrylamide-2-methylpro panesulfonic acid, hexadecyltrimethylammonium chloride, water quality is than for 6:2:4:3:10.
The caustic solution of frequency chip the most according to claim 1, it is characterised in that: add corrosion system quality 0.8～1%
Flocculation liquid.
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