CN106169886A - Two grades of booster circuits of high step-up ratio - Google Patents
Two grades of booster circuits of high step-up ratio Download PDFInfo
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- CN106169886A CN106169886A CN201610763483.XA CN201610763483A CN106169886A CN 106169886 A CN106169886 A CN 106169886A CN 201610763483 A CN201610763483 A CN 201610763483A CN 106169886 A CN106169886 A CN 106169886A
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- oxide
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
- H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
- H02M5/10—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using transformers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention provides two grades of booster circuits of a kind of high step-up ratio, two grades of booster circuits of this high step-up ratio include that metal-oxide-semiconductor drives module, first metal-oxide-semiconductor, second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor, 4th metal-oxide-semiconductor, first transformator and the second transformator, this metal-oxide-semiconductor drives module to control this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor and the unlatching of the 4th metal-oxide-semiconductor, this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor output AC supply electricity to this first transformator, boosting by this first transformator He this second transformator, High AC voltage is exported at outfan.Two grades of booster circuits of this high step-up ratio are safe and efficient, and medical personnel can be facilitated to seek medical advice at any time, than hommization, it is possible to save manufacturing cost, also play certain positive role in terms of medical waste.
Description
Technical field
The present invention relates to technical field of medical instruments, especially relate to two grades of booster circuits of a kind of high step-up ratio.
Background technology
High-frequency apparatus is difficult to start due to supply voltage deficiency, it is therefore desirable to carry out boosting to meet running voltage, obtains
Last high-voltage signal.What current step-up method was taked is to be transformed to AC signal by direct current signal, then is entered by AC signal
Row boosting, such boosting mode not only also exists inefficient problem, also uses too much because of element, take too much space.
We have invented two grades of booster circuits of a kind of new high step-up ratio for this, solve above technical problem.
Summary of the invention
It is an object of the invention to provide one and can provide AC signal at input, to ensure to export high pressure at outfan
Two grades of booster circuits of the high step-up ratio of AC signal.
The purpose of the present invention can be achieved by the following technical measures: two grades of booster circuits of high step-up ratio, and this height boosts
Two grades of booster circuits of ratio include that metal-oxide-semiconductor drives module, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the
One transformator and the second transformator, the drain electrode of this first metal-oxide-semiconductor is connected to the positive pole of DC high voltage, source electrode be connected to this second
The drain electrode of metal-oxide-semiconductor, grid is connected to this metal-oxide-semiconductor and drives module, and the grid of this second metal-oxide-semiconductor is connected to this metal-oxide-semiconductor and drives module,
Source electrode is connected to the negative pole of DC high voltage, and the drain electrode of the 3rd metal-oxide-semiconductor is connected to the positive pole of DC high voltage, and source electrode is connected to
The drain electrode of the 4th metal-oxide-semiconductor, grid is connected to this metal-oxide-semiconductor and drives module, and the grid of the 4th metal-oxide-semiconductor is connected to this metal-oxide-semiconductor and drives
Dynamic model block, source electrode is connected to the negative pole of DC high voltage, and one end of the primary coil of this first transformator is connected to the 3rd MOS
Between pipe and the 4th metal-oxide-semiconductor, the other end is connected to this metal-oxide-semiconductor and drives module, and the primary coil of this second transformator is coupled to
The secondary coil of this first transformator, the secondary coil of this second transformator is outfan, this metal-oxide-semiconductor drive module control this
One metal-oxide-semiconductor, this second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the unlatching of the 4th metal-oxide-semiconductor, this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, should
3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor output AC supply electricity to this first transformator, by this first transformator and this second transformator
Boosting, outfan export High AC voltage.
The purpose of the present invention realizes also by following technical measures:
This metal-oxide-semiconductor drives module to include Phase control IC, metal-oxide-semiconductor driver, the 3rd transformator and the 4th transformator, should
Four outfans of Phase control IC are connected to four inputs of this metal-oxide-semiconductor driver, the of this metal-oxide-semiconductor driver
One outfan is coupled to one end of the primary coil of the 3rd transformator, another termination of the primary coil of the 3rd transformator
Ground, the second outfan of this metal-oxide-semiconductor driver is coupled to the grid of this second metal-oxide-semiconductor, the 3rd outfan of this metal-oxide-semiconductor driver
It is coupled to one end of the primary coil of the 4th transformator, the other end ground connection of the primary coil of the 4th transformator, this metal-oxide-semiconductor
4th outfan of driver is coupled to the grid of the 4th metal-oxide-semiconductor, and one end of the secondary coil of the 3rd transformator is coupled to
The grid of this first metal-oxide-semiconductor, the other end is connected to the other end of the primary coil of this first transformator, the 4th transformator time
One end of level coil is coupled to the grid of the 3rd metal-oxide-semiconductor, and the other end is connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
This metal-oxide-semiconductor drives module also to include the first electric capacity and the second electric capacity, and one end of this first electric capacity is connected to this metal-oxide-semiconductor
First outfan of driver, the other end is connected to one end of the primary coil of the 3rd transformator, one end of this second electric capacity
Being connected to the 3rd outfan of this metal-oxide-semiconductor driver, the other end is connected to one end of the primary coil of the 4th transformator, this shifting
The driving signal of output is buffered by phase control chip by this metal-oxide-semiconductor driver, by this first electric capacity and this second electricity
Hold and the driving signal of output is filtered, to control this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th
The unlatching of metal-oxide-semiconductor.
Two grades of booster circuits of this high step-up ratio also include that the 3rd electric capacity, one end of the 3rd electric capacity are connected to this first change
One end of the secondary coil of depressor, the other end is connected to one end of the primary coil of this second transformator, to filter hash,
And make the output signal of this first transformator keep maximum.
Two grades of booster circuits of this high step-up ratio also include the 4th electric capacity and the first inductance, the 4th electric capacity and this first electricity
After sense parallel connection, it is connected between the primary coil two ends of this second transformator, so that the output signal of this first transformator keeps
Maximum.
Two grades of booster circuits of this high step-up ratio also include the first resistance, and this first resistance is connected to this second transformator
Between secondary coil two ends, constitute outfan with the secondary coil of this second transformator.
Two grades of booster circuits of the high step-up ratio in the present invention, simply, efficiently, safety is high, and can control to produce
Cost.Circuit of the present invention is simple, than using circuit, safe and efficient, it may be achieved property is relatively strong, and controlling is strong, Economy type medicine device
The tool device space.The present invention is applicable in the control circuit of Portable medical instrument equipment, can facilitate medical personnel with
Time seek medical advice, than hommization.The present invention can save more components and parts, not only can save manufacturing cost, gives up in medical treatment
Material aspect also plays certain positive role.
Accompanying drawing explanation
Fig. 1 is the structure chart of a specific embodiment of two grades of booster circuits of the high step-up ratio of the present invention；
Fig. 2 is the boosting output waveform figure of a specific embodiment of the present invention.
Detailed description of the invention
For making the above and other objects, features and advantages of the present invention to become apparent, cited below particularly go out preferably to implement
Example, and coordinate shown in accompanying drawing, it is described in detail below.
As it is shown in figure 1, the structure chart of two grades of booster circuits of the high step-up ratio that Fig. 1 is the present invention.The two of this high step-up ratio
Level booster circuit is by the first metal-oxide-semiconductor D1, the second metal-oxide-semiconductor D2, the 3rd metal-oxide-semiconductor D3, the 4th metal-oxide-semiconductor D4, T1 transformator, T2 transformation
Device, T3 transformator, T4 transformator, inductance, electric capacity, Phase control IC, metal-oxide-semiconductor driver form.
The drain electrode of the first metal-oxide-semiconductor D1 and the 3rd metal-oxide-semiconductor D3 connects high voltage, the source electrode of the first metal-oxide-semiconductor D1 and the second metal-oxide-semiconductor
The drain electrode of D2 connects, and the source electrode of the 3rd metal-oxide-semiconductor D3 and the drain electrode of the 4th metal-oxide-semiconductor D4 connect, the grid and the 3rd of the first metal-oxide-semiconductor D1
The grid of metal-oxide-semiconductor D3 is connected with secondary coil one end of T1 transformator and the out-secondary of T4 respectively.The source of the second metal-oxide-semiconductor D2
Pole is connected with high voltage negative pole with the source electrode of the 4th metal-oxide-semiconductor D4, and the grid of the second metal-oxide-semiconductor D2 and the grid of the 4th metal-oxide-semiconductor D4 divide
It is not connected with B outfan and the D outfan of Phase control IC.
One end of the primary coil of T1 transformator is connected between the 3rd metal-oxide-semiconductor D3 and the 4th metal-oxide-semiconductor D4, the other end and T3
The other end of the secondary coil of transformator connects.The secondary coil of T1 transformator is by the primary coil of Cs inductance with T2 transformator
Connecting, the secondary coil of T2 transformator constitutes outfan with resistance Rc.Primary coil one end of T3 transformator and phase shifting control core
The A output of sheet connects, other end ground connection.One section of the primary coil of T4 transformator is connected with the C outfan of Phase control IC,
Other end ground connection.
Upon turning on the power supply, output signal is buffered by Phase control IC by metal-oxide-semiconductor driver, passes through electric capacity
Hash is filtered by C1, C2, and the signal after filtration can control the first metal-oxide-semiconductor D1, the second metal-oxide-semiconductor D2, the 3rd metal-oxide-semiconductor
D3, the unlatching of the 4th metal-oxide-semiconductor D4, input becomes alternating current, by T1 transformator and the boosting of T2 transformator, can at outfan
Obtain the High AC voltage needed.
T1 starts, the first metal-oxide-semiconductor D1 and the 4th metal-oxide-semiconductor D4 conducting, and the 3rd metal-oxide-semiconductor D3 and the second metal-oxide-semiconductor D2 closes, direct current
Power supply output constant voltage, output waveform enters (1) in Fig. 2.
T1-t2 period, the first metal-oxide-semiconductor D1 and the 4th metal-oxide-semiconductor D4 close, and the 3rd metal-oxide-semiconductor D3 and the second metal-oxide-semiconductor D2 opens
Open, now (2) of output voltage wave such as Fig. 2.Change the voltage way of output in this manner.
When the voltage of different periods is input to the primary coil of T1 transformator, phase-shifting transformer can will control voltage signal
It is transferred to this by B, C outfan, is the direction such as Fig. 2 (3) of input voltage signal.By the primary transformation of T1 can produce with
The ac high-voltage of noise signal, owing to T1 can produce leakage inductance, therefore the leakage inductance of T1 can as resonant inductance and Cs series combination,
Hash can be filtered, make the AC signal that generation is neat, and peak signal can be kept.Now output waveform such as Fig. 2
(4).CpLp is in parallel, the output signal of T1 can be kept maximum, and realize secondary booster by T2 transformator, obtain final
High AC voltage, such as Fig. 2 (5), now can obtain preferable high-voltage signal at outfan.
Claims (6)
1. two grades of booster circuits of high step-up ratio, it is characterised in that two grades of booster circuits of this high step-up ratio include that metal-oxide-semiconductor drives
Module, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first transformator and the second transformator, a MOS
The drain electrode of pipe is connected to the positive pole of DC high voltage, and source electrode is connected to the drain electrode of this second metal-oxide-semiconductor, and grid is connected to this metal-oxide-semiconductor
Driving module, the grid of this second metal-oxide-semiconductor is connected to this metal-oxide-semiconductor and drives module, and source electrode is connected to the negative pole of DC high voltage, should
The drain electrode of the 3rd metal-oxide-semiconductor is connected to the positive pole of DC high voltage, and source electrode is connected to the drain electrode of the 4th metal-oxide-semiconductor, and grid is connected to
This metal-oxide-semiconductor drives module, and the grid of the 4th metal-oxide-semiconductor is connected to this metal-oxide-semiconductor and drives module, and source electrode is connected to DC high voltage
Negative pole, one end of the primary coil of this first transformator is connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, and the other end is even
Being connected to this metal-oxide-semiconductor and drive module, the primary coil of this second transformator is coupled to the secondary coil of this first transformator, and this is second years old
The secondary coil of transformator is outfan, and this metal-oxide-semiconductor drives module to control this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, the 3rd MOS
Pipe and the unlatching of the 4th metal-oxide-semiconductor, this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the output of the 4th metal-oxide-semiconductor are handed over
Stream supplies electricity to this first transformator, by the boosting of this first transformator He this second transformator, exports high-voltage alternating at outfan
Voltage.
Two grades of booster circuits of high step-up ratio the most according to claim 1, it is characterised in that this metal-oxide-semiconductor drives module bag
Include Phase control IC, metal-oxide-semiconductor driver, the 3rd transformator and the 4th transformator, four outfans of this Phase control IC
Being connected to four inputs of this metal-oxide-semiconductor driver, the first outfan of this metal-oxide-semiconductor driver is coupled to the 3rd transformation
One end of the primary coil of device, the other end ground connection of the primary coil of the 3rd transformator, the second output of this metal-oxide-semiconductor driver
End is coupled to the grid of this second metal-oxide-semiconductor, and the 3rd outfan of this metal-oxide-semiconductor driver is coupled to the primary line of the 4th transformator
One end of circle, the other end ground connection of the primary coil of the 4th transformator, the 4th outfan of this metal-oxide-semiconductor driver is coupled to this
The grid of the 4th metal-oxide-semiconductor, one end of the secondary coil of the 3rd transformator is coupled to the grid of this first metal-oxide-semiconductor, and the other end is even
Being connected to the other end of the primary coil of this first transformator, one end of the secondary coil of the 4th transformator is coupled to the 3rd
The grid of metal-oxide-semiconductor, the other end is connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
Two grades of booster circuits of high step-up ratio the most according to claim 2, it is characterised in that this metal-oxide-semiconductor drives module also
Including the first electric capacity and the second electric capacity, one end of this first electric capacity is connected to the first outfan of this metal-oxide-semiconductor driver, the other end
Being connected to one end of the primary coil of the 3rd transformator, one end of this second electric capacity is connected to the 3rd of this metal-oxide-semiconductor driver
Outfan, the other end is connected to one end of the primary coil of the 4th transformator, and this Phase control IC is driven by this metal-oxide-semiconductor
The driving signal of output is buffered by device, is carried out by the driving signal of output by this first electric capacity and this second electric capacity
Filter, to control this first metal-oxide-semiconductor, this second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the unlatching of the 4th metal-oxide-semiconductor.
Two grades of booster circuits of high step-up ratio the most according to claim 1, it is characterised in that two grades of this high step-up ratio rise
Volt circuit also includes that the 3rd electric capacity, one end of the 3rd electric capacity are connected to one end of the secondary coil of this first transformator, another
End is connected to one end of the primary coil of this second transformator, to filter hash, and makes the output of this first transformator believe
Number keep maximum.
Two grades of booster circuits of high step-up ratio the most according to claim 1, it is characterised in that two grades of this high step-up ratio rise
After volt circuit also includes the 4th electric capacity and the first inductance, the 4th electric capacity and this first inductance in parallel, it is connected to this second transformation
Between the primary coil two ends of device, so that the output signal of this first transformator keeps maximum.
Two grades of booster circuits of high step-up ratio the most according to claim 1, it is characterised in that two grades of this high step-up ratio rise
Volt circuit also includes the first resistance, and this first resistance is connected between the secondary coil two ends of this second transformator, with this second
The secondary coil of transformator constitutes outfan.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610763483.XA CN106169886B (en) | 2016-08-30 | 2016-08-30 | The two level booster circuit of high step-up ratio |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763483.XA CN106169886B (en) | 2016-08-30 | 2016-08-30 | The two level booster circuit of high step-up ratio |
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| CN106169886A true CN106169886A (en) | 2016-11-30 |
| CN106169886B CN106169886B (en) | 2018-05-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787686A (en) * | 2016-12-07 | 2017-05-31 | 山东华博电气有限公司 | Argon-gas knife of new generation intends the circuit structure of the asymmetrical half-bridge drive circuit for using |
| CN116317548A (en) * | 2023-05-22 | 2023-06-23 | 深圳市恒运昌真空技术有限公司 | Voltage conversion circuit and voltage converter |
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| CN204013246U (en) * | 2014-06-04 | 2014-12-10 | 天一宏业武汉科技发展有限公司 | High-frequency and high-voltage sinewave output power supply |
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| CN101636034A (en) * | 2008-07-24 | 2010-01-27 | 北京光耀电力设备有限公司 | Device and method for AC uninterrupted arc power supply |
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| CN106169886B (en) | 2018-05-18 |
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Denomination of invention: Two stage boost circuit with high voltage rise ratio Effective date of registration: 20210825 Granted publication date: 20180518 Pledgee: Ji'nan rural commercial bank Limited by Share Ltd. high tech branch Pledgor: SHANDONG HUABO ELECTRIC Co.,Ltd. Registration number: Y2021980008380 |
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Date of cancellation: 20220815 Granted publication date: 20180518 Pledgee: Ji'nan rural commercial bank Limited by Share Ltd. high tech branch Pledgor: SHANDONG HUABO ELECTRIC Co.,Ltd. Registration number: Y2021980008380 |