CN106169886B - The two level booster circuit of high step-up ratio - Google Patents
The two level booster circuit of high step-up ratio Download PDFInfo
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- CN106169886B CN106169886B CN201610763483.XA CN201610763483A CN106169886B CN 106169886 B CN106169886 B CN 106169886B CN 201610763483 A CN201610763483 A CN 201610763483A CN 106169886 B CN106169886 B CN 106169886B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
- H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
- H02M5/10—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using transformers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of two level booster circuit of high step-up ratio, the two level booster circuit of the high step-up ratio includes metal-oxide-semiconductor drive module, first metal-oxide-semiconductor, second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor, 4th metal-oxide-semiconductor, first transformer and the second transformer, the metal-oxide-semiconductor drive module controls first metal-oxide-semiconductor, second metal-oxide-semiconductor, the unlatching of 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, first metal-oxide-semiconductor, second metal-oxide-semiconductor, 3rd metal-oxide-semiconductor exchanges with the output of the 4th metal-oxide-semiconductor and supplies electricity to first transformer, pass through the boosting of first transformer and second transformer, high AC voltage is exported in output terminal.The two level booster circuit of the high step-up ratio is safe and efficient, medical staff can be facilitated to see a doctor at any time, compared with hommization, can save manufacture cost, certain positive effect is also played in terms of medical waste.
Description
Technical field
The present invention relates to the field of medical instrument technology, a kind of two level booster circuit of high step-up ratio is especially related to.
Background technology
High-frequency apparatus is difficult to start due to supply voltage deficiency, it is therefore desirable to boost to meet operating voltage, obtain
Last high-voltage signal.What current step-up method was taken is to be transformed to AC signal by direct current signal, then by AC signal into
Row boosting, such boosting mode not only there is efficiency it is low the problem of, also because element is using excessive, occupy excessive space.
Therefore we have invented a kind of two level booster circuit of new high step-up ratio, solves more than technical problem.
The content of the invention
The object of the present invention is to provide one kind to provide AC signal in input terminal, to ensure to export high pressure in output terminal
The two level booster circuit of the high step-up ratio of AC signal.
The purpose of the present invention can be achieved by the following technical measures：The two level booster circuit of high step-up ratio, height boosting
The two level booster circuit of ratio includes metal-oxide-semiconductor drive module, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the
One transformer and the second transformer, the drain electrode of first metal-oxide-semiconductor are connected to the anode of DC high voltage, source electrode be connected to this second
The drain electrode of metal-oxide-semiconductor, grid are connected to the metal-oxide-semiconductor drive module, and the grid of second metal-oxide-semiconductor is connected to the metal-oxide-semiconductor drive module,
Source electrode is connected to the cathode of DC high voltage, and the drain electrode of the 3rd metal-oxide-semiconductor is connected to the anode of DC high voltage, and source electrode is connected to
The drain electrode of 4th metal-oxide-semiconductor, grid are connected to the metal-oxide-semiconductor drive module, and the grid of the 4th metal-oxide-semiconductor is connected to metal-oxide-semiconductor drive
Dynamic model block, source electrode are connected to the cathode of DC high voltage, and one end of the primary coil of first transformer is connected to the 3rd MOS
Between pipe and the 4th metal-oxide-semiconductor, the other end is connected to the metal-oxide-semiconductor drive module, and the primary coil of second transformer is coupled to
The secondary coil of first transformer, the secondary coil of second transformer are output terminal, the metal-oxide-semiconductor drive module control this
The unlatching of one metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, first metal-oxide-semiconductor, second metal-oxide-semiconductor are somebody's turn to do
3rd metal-oxide-semiconductor exchanges with the output of the 4th metal-oxide-semiconductor and supplies electricity to first transformer, passes through first transformer and second transformer
Boosting, output terminal export high AC voltage.
The purpose of the present invention can be also achieved by the following technical measures：
The metal-oxide-semiconductor drive module includes Phase control IC, metal-oxide-semiconductor driver, the 3rd transformer and the 4th transformer, should
Four output terminals of Phase control IC are connected to four input terminals of the metal-oxide-semiconductor driver, and the of the metal-oxide-semiconductor driver
One output terminal is coupled to one end of the primary coil of the 3rd transformer, another termination of the primary coil of the 3rd transformer
Ground, the second output terminal of the metal-oxide-semiconductor driver are coupled to the grid of second metal-oxide-semiconductor, the 3rd output terminal of the metal-oxide-semiconductor driver
It is coupled to one end of the primary coil of the 4th transformer, the other end ground connection of the primary coil of the 4th transformer, the metal-oxide-semiconductor
4th output terminal of driver is coupled to the grid of the 4th metal-oxide-semiconductor, and one end of the secondary coil of the 3rd transformer is coupled to
The grid of first metal-oxide-semiconductor, the other end are connected to the other end of the primary coil of first transformer, time of the 4th transformer
One end of grade coil is coupled to the grid of the 3rd metal-oxide-semiconductor, and the other end is connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
The metal-oxide-semiconductor drive module further includes the first capacitance and the second capacitance, and one end of first capacitance is connected to the metal-oxide-semiconductor
First output terminal of driver, the other end are connected to one end of the primary coil of the 3rd transformer, one end of second capacitance
The 3rd output terminal of the metal-oxide-semiconductor driver is connected to, the other end is connected to one end of the primary coil of the 4th transformer, the shifting
Phase control chip by the metal-oxide-semiconductor driver by the drive signal of output into row buffering, pass through first capacitance and second electricity
The drive signal of output is filtered by appearance, to control first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th
The unlatching of metal-oxide-semiconductor.
The two level booster circuit of the high step-up ratio further includes the 3rd capacitance, and one end of the 3rd capacitance is connected to first change
One end of the secondary coil of depressor, the other end is connected to one end of the primary coil of second transformer, to filter hash,
And the output signal of first transformer is made to keep maximum.
The two level booster circuit of the high step-up ratio further includes the 4th capacitance and the first inductance, the 4th capacitance and first electricity
It after sense is in parallel, is connected between the primary coil both ends of second transformer, so that the output signal of first transformer is kept
It is maximum.
The two level booster circuit of the high step-up ratio further includes first resistor, which is connected to second transformer
Between secondary coil both ends, output terminal is formed with the secondary coil of second transformer.
The two level booster circuit of high step-up ratio in the present invention, it is simply, efficiently, safe, and production can be controlled
Cost.Circuit of the present invention is simple, safe and efficient, it may be achieved property is stronger, and controlling is strong, Economy type medicine device compared with having used circuit
The tool device space.The present invention is applicable in the control circuit of Portable medical instrument equipment, can facilitate medical staff with
When see a doctor, compared with hommization.The present invention can save more component, can not only save manufacture cost, useless in medical treatment
Certain positive effect is also played in terms of material.
Description of the drawings
Fig. 1 is the structure chart of a specific embodiment of the two level booster circuit of the high step-up ratio of the present invention；
Fig. 2 is the boosting output waveform figure of the specific embodiment of the present invention.
Specific embodiment
For enable the present invention above and other objects, features and advantages be clearer and more comprehensible, it is cited below particularly go out preferable implementation
Example, and coordinate shown in attached drawing, it is described in detail below.
As shown in Figure 1, Fig. 1 is the structure chart of the two level booster circuit of the high step-up ratio of the present invention.The two of the high step-up ratio
Grade booster circuit is by the first metal-oxide-semiconductor D1, the second metal-oxide-semiconductor D2, the 3rd metal-oxide-semiconductor D3, the 4th metal-oxide-semiconductor D4, T1 transformer, T2 transformations
Device, T3 transformers, T4 transformers, inductance, capacitance, Phase control IC, metal-oxide-semiconductor driver composition.
First metal-oxide-semiconductor D1 is connected high voltage, the source electrode and the second metal-oxide-semiconductor of the first metal-oxide-semiconductor D1 with the drain electrode of the 3rd metal-oxide-semiconductor D3
The drain electrode connection of D2, the source electrode of the 3rd metal-oxide-semiconductor D3 are connected with the drain electrode of the 4th metal-oxide-semiconductor D4, the grid and the 3rd of the first metal-oxide-semiconductor D1
Out-secondary of the grid of metal-oxide-semiconductor D3 respectively with secondary coil one end of T1 transformers and T4 is connected.The source of second metal-oxide-semiconductor D2
Pole is connected with the source electrode of the 4th metal-oxide-semiconductor D4 with high voltage cathode, the grid of the second metal-oxide-semiconductor D2 and the grid of the 4th metal-oxide-semiconductor D4 point
It is not connected with the B output terminals of Phase control IC and D output terminals.
One end of the primary coil of T1 transformers is connected between the 3rd metal-oxide-semiconductor D3 and the 4th metal-oxide-semiconductor D4, the other end and T3
The other end connection of the secondary coil of transformer.The secondary coil of T1 transformers passes through Cs inductance and the primary coil of T2 transformers
Connection, secondary coil and the resistance Rc of T2 transformers form output terminal.Primary coil one end of T3 transformers and phase shifting control core
The A output connections of piece, other end ground connection.One section of the primary coil of T4 transformers is connected with the C output terminals of Phase control IC,
The other end is grounded.
Upon turning on the power supply, Phase control IC will export signal into row buffering by metal-oxide-semiconductor driver, pass through capacitance
Hash is filtered by C1, C2, and the signal after filtering can control the first metal-oxide-semiconductor D1, the second metal-oxide-semiconductor D2, the 3rd metal-oxide-semiconductor
The unlatching of D3, the 4th metal-oxide-semiconductor D4, input terminal become alternating current, can in output terminal by the boosting of T1 transformers and T2 transformers
The high AC voltage needed.
T1 starts, and the first metal-oxide-semiconductor D1 is turned on the 4th metal-oxide-semiconductor D4, and the 3rd metal-oxide-semiconductor D3 and the second metal-oxide-semiconductor D2 are closed, direct current
Power supply exports constant voltage, and output waveform enters (1) in Fig. 2.
T1-t2 periods, the first metal-oxide-semiconductor D1 and the 4th metal-oxide-semiconductor D4 are closed, and the 3rd metal-oxide-semiconductor D3 is opened with the second metal-oxide-semiconductor D2
It opens, at this time (2) of output voltage wave such as Fig. 2.Change voltage output mode in this manner.
When different periods control source to T1 transformers primary coil when, phase-shifting transformer can be by control voltage signal
This is transferred to by B, C output terminal, is direction such as Fig. 2 (3) of input voltage signal.It can be generated and carried by the primary transformation of T1
The ac high-voltage of noise signal, since T1 can generate leakage inductance, the leakage inductance of T1 can be used as resonant inductance and Cs series combinations,
Hash can be filtered, makes the AC signal that generation is neat, and peak signal can be kept.Output waveform such as Fig. 2 at this time
(4).CpLp is in parallel, can the output signal of T1 be kept maximum, and passes through T2 transformers and realize secondary booster, obtains final
High AC voltage such as Fig. 2 (5), can obtain preferable high-voltage signal in output terminal at this time.
Claims (5)
1. the two level booster circuit of high step-up ratio, which is characterized in that the two level booster circuit of the high step-up ratio drives including metal-oxide-semiconductor
Module, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the first transformer and the second transformer, the first MOS
The drain electrode of pipe is connected to the anode of DC high voltage, and source electrode is connected to the drain electrode of second metal-oxide-semiconductor, and grid is connected to the metal-oxide-semiconductor
Drive module, the grid of second metal-oxide-semiconductor are connected to the metal-oxide-semiconductor drive module, and source electrode is connected to the cathode of DC high voltage, should
The drain electrode of 3rd metal-oxide-semiconductor is connected to the anode of DC high voltage, and source electrode is connected to the drain electrode of the 4th metal-oxide-semiconductor, and grid is connected to
The metal-oxide-semiconductor drive module, the grid of the 4th metal-oxide-semiconductor are connected to the metal-oxide-semiconductor drive module, and source electrode is connected to DC high voltage
Cathode, one end of the primary coil of first transformer are connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, and the other end connects
The metal-oxide-semiconductor drive module is connected to, the primary coil of second transformer is coupled to the secondary coil of first transformer, this second
The secondary coil of transformer is output terminal, which controls first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd MOS
The unlatching of pipe and the 4th metal-oxide-semiconductor, first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the output of the 4th metal-oxide-semiconductor are handed over
Galvanic electricity gives first transformer, and by the boosting of first transformer and second transformer, high-voltage alternating is exported in output terminal
Voltage；
The metal-oxide-semiconductor drive module includes Phase control IC, metal-oxide-semiconductor driver, the 3rd transformer and the 4th transformer, the phase shift
Four output terminals of control chip are connected to four input terminals of the metal-oxide-semiconductor driver, and the first of the metal-oxide-semiconductor driver is defeated
Outlet is coupled to one end of the primary coil of the 3rd transformer, and the other end ground connection of the primary coil of the 3rd transformer should
The second output terminal of metal-oxide-semiconductor driver is coupled to the grid of second metal-oxide-semiconductor, the 3rd output terminal coupling of the metal-oxide-semiconductor driver
In one end of the primary coil of the 4th transformer, the other end ground connection of the primary coil of the 4th transformer, metal-oxide-semiconductor driving
4th output terminal of device is coupled to the grid of the 4th metal-oxide-semiconductor, one end of the secondary coil of the 3rd transformer be coupled to this
The grid of one metal-oxide-semiconductor, the other end are connected to the other end of the primary coil of first transformer, the secondary wire of the 4th transformer
One end of circle is coupled to the grid of the 3rd metal-oxide-semiconductor, and the other end is connected between the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
2. the two level booster circuit of high step-up ratio according to claim 1, which is characterized in that the metal-oxide-semiconductor drive module is also
Including the first capacitance and the second capacitance, one end of first capacitance is connected to the first output terminal of the metal-oxide-semiconductor driver, the other end
One end of the primary coil of the 3rd transformer is connected to, one end of second capacitance is connected to the 3rd of the metal-oxide-semiconductor driver the
Output terminal, the other end are connected to one end of the primary coil of the 4th transformer, which is driven by the metal-oxide-semiconductor
The drive signal of output into row buffering, was carried out the drive signal of output by device by first capacitance and second capacitance
Filter, to control the unlatching of first metal-oxide-semiconductor, second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor.
3. the two level booster circuit of high step-up ratio according to claim 1, which is characterized in that the two level liter of the high step-up ratio
Volt circuit further includes the 3rd capacitance, and one end of the 3rd capacitance is connected to one end of the secondary coil of first transformer, another
End is connected to one end of the primary coil of second transformer, to filter hash, and believes the output of first transformer
Number keep maximum.
4. the two level booster circuit of high step-up ratio according to claim 1, which is characterized in that the two level liter of the high step-up ratio
Volt circuit further includes the 4th capacitance and the first inductance, and the 4th capacitance is connected to second transformation with after first inductance in parallel
Between the primary coil both ends of device, so that the output signal of first transformer keeps maximum.
5. the two level booster circuit of high step-up ratio according to claim 1, which is characterized in that the two level liter of the high step-up ratio
Volt circuit further includes first resistor, which is connected between the secondary coil both ends of second transformer, with this second
The secondary coil of transformer forms output terminal.
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| CN201610763483.XA CN106169886B (en) | 2016-08-30 | 2016-08-30 | The two level booster circuit of high step-up ratio |
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| CN201610763483.XA CN106169886B (en) | 2016-08-30 | 2016-08-30 | The two level booster circuit of high step-up ratio |
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| CN106169886B true CN106169886B (en) | 2018-05-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106787686A (en) * | 2016-12-07 | 2017-05-31 | 山东华博电气有限公司 | Argon-gas knife of new generation intends the circuit structure of the asymmetrical half-bridge drive circuit for using |
| CN116317548B (en) * | 2023-05-22 | 2023-08-01 | 深圳市恒运昌真空技术有限公司 | Voltage conversion circuit and voltage converter |
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| CN101515762A (en) * | 2009-04-07 | 2009-08-26 | 哈尔滨工业大学 | Passive clamping single-phase single-grade bridge type power factor correcting convertor and control method thereof |
| CN101636034A (en) * | 2008-07-24 | 2010-01-27 | 北京光耀电力设备有限公司 | Device and method for AC uninterrupted arc power supply |
| CN101902129A (en) * | 2010-07-01 | 2010-12-01 | 西安交通大学 | Current-type multi-resonance direct current (DC) converter |
| CN102570831A (en) * | 2012-01-05 | 2012-07-11 | 深圳市高斯宝电气技术有限公司 | Isolated direct current (DC) bidirectional converter |
| CN204013246U (en) * | 2014-06-04 | 2014-12-10 | 天一宏业武汉科技发展有限公司 | High-frequency and high-voltage sinewave output power supply |
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2016
- 2016-08-30 CN CN201610763483.XA patent/CN106169886B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000050402A (en) * | 1998-08-03 | 2000-02-18 | Denso Corp | Power source unit for hybrid electric automobile |
| CN101636034A (en) * | 2008-07-24 | 2010-01-27 | 北京光耀电力设备有限公司 | Device and method for AC uninterrupted arc power supply |
| CN101515762A (en) * | 2009-04-07 | 2009-08-26 | 哈尔滨工业大学 | Passive clamping single-phase single-grade bridge type power factor correcting convertor and control method thereof |
| CN101902129A (en) * | 2010-07-01 | 2010-12-01 | 西安交通大学 | Current-type multi-resonance direct current (DC) converter |
| CN102570831A (en) * | 2012-01-05 | 2012-07-11 | 深圳市高斯宝电气技术有限公司 | Isolated direct current (DC) bidirectional converter |
| CN204013246U (en) * | 2014-06-04 | 2014-12-10 | 天一宏业武汉科技发展有限公司 | High-frequency and high-voltage sinewave output power supply |
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Denomination of invention: Two stage boost circuit with high voltage rise ratio Effective date of registration: 20210825 Granted publication date: 20180518 Pledgee: Ji'nan rural commercial bank Limited by Share Ltd. high tech branch Pledgor: SHANDONG HUABO ELECTRIC Co.,Ltd. Registration number: Y2021980008380 |
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Date of cancellation: 20220815 Granted publication date: 20180518 Pledgee: Ji'nan rural commercial bank Limited by Share Ltd. high tech branch Pledgor: SHANDONG HUABO ELECTRIC Co.,Ltd. Registration number: Y2021980008380 |