CN106165110B - 使熔体成长为结晶片的结晶器及方法 - Google Patents

使熔体成长为结晶片的结晶器及方法 Download PDF

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Publication number
CN106165110B
CN106165110B CN201580016307.3A CN201580016307A CN106165110B CN 106165110 B CN106165110 B CN 106165110B CN 201580016307 A CN201580016307 A CN 201580016307A CN 106165110 B CN106165110 B CN 106165110B
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CN
China
Prior art keywords
gas
heat dissipation
melt
crystallizer
block
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Expired - Fee Related
Application number
CN201580016307.3A
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English (en)
Chinese (zh)
Other versions
CN106165110A (zh
Inventor
彼德·L·凯勒曼
布莱恩·梅克英特许
菲德梨克·M·卡尔森
大卫·莫雷尔
阿拉·莫瑞迪亚
南帝斯·德塞
孙大为
法兰克·辛克莱
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Priority to CN201711069158.4A priority Critical patent/CN107815728B/zh
Publication of CN106165110A publication Critical patent/CN106165110A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201580016307.3A 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法 Expired - Fee Related CN106165110B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711069158.4A CN107815728B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器系统及方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,991 US9957636B2 (en) 2014-03-27 2014-03-27 System and method for crystalline sheet growth using a cold block and gas jet
US14/226,991 2014-03-27
PCT/US2015/020381 WO2015148156A1 (en) 2014-03-27 2015-03-13 System and method for crystalline sheet growth using a cold block and gas jet

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201711069158.4A Division CN107815728B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器系统及方法

Publications (2)

Publication Number Publication Date
CN106165110A CN106165110A (zh) 2016-11-23
CN106165110B true CN106165110B (zh) 2017-12-08

Family

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CN201580016307.3A Expired - Fee Related CN106165110B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法
CN201711069158.4A Expired - Fee Related CN107815728B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器系统及方法

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Country Status (7)

Country Link
US (1) US9957636B2 (https=)
EP (1) EP3123523B1 (https=)
JP (1) JP6475751B2 (https=)
KR (1) KR102348599B1 (https=)
CN (2) CN106165110B (https=)
TW (1) TWI690626B (https=)
WO (1) WO2015148156A1 (https=)

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* Cited by examiner, † Cited by third party
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WO2015047995A1 (en) * 2013-09-25 2015-04-02 United Technologies Corporation Simplified cold spray nozzle and gun
FR3049343A1 (fr) 2016-03-22 2017-09-29 Dover Europe Sarl Dispositif de mesure de debit et de viscosite et son utilisation dans une imprimante
US10179958B2 (en) * 2016-09-16 2019-01-15 Varian Semiconductor Equipment Associates, Inc Apparatus and method for crystalline sheet growth
CN107217296B (zh) * 2017-04-28 2019-05-07 常州大学 一种硅片水平生长设备和方法
US11661672B2 (en) * 2018-08-06 2023-05-30 Carnegie Mellon University Method for producing a sheet from a melt by imposing a periodic change in the rate of pull
TW202136597A (zh) * 2020-02-19 2021-10-01 美商先鋒設備科技公司 在熔體表面形成之結晶片材的主動邊緣控制
JP2023514607A (ja) * 2020-02-19 2023-04-06 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 表面冷却と溶融加熱を組み合わせて用いる、溶融物の表面上に形成された結晶シートの厚さ及び幅の制御

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US20100288186A1 (en) * 2009-05-18 2010-11-18 Bang Christopher A Formation of silicon sheets by impinging fluid
CN102485953A (zh) * 2010-12-01 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置及结晶膜生长设备

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US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
JPS62291977A (ja) * 1986-06-06 1987-12-18 シ−メンス、アクチエンゲゼルシヤフト 太陽電池用シリコン盤の切り出し方法と装置
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
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US6800137B2 (en) * 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
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US7294197B1 (en) 2003-08-13 2007-11-13 Nicholas Gralenski Formation of a silicon sheet by cold surface casting
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WO2008090864A1 (ja) 2007-01-25 2008-07-31 National Institute Of Advanced Industrial Science And Technology シリコン基板の製造装置、製造方法及びシリコン基板
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US20100288186A1 (en) * 2009-05-18 2010-11-18 Bang Christopher A Formation of silicon sheets by impinging fluid
CN102485953A (zh) * 2010-12-01 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置及结晶膜生长设备

Also Published As

Publication number Publication date
KR20160138182A (ko) 2016-12-02
US20180047864A1 (en) 2018-02-15
TWI690626B (zh) 2020-04-11
US9957636B2 (en) 2018-05-01
JP2017509578A (ja) 2017-04-06
EP3123523A1 (en) 2017-02-01
EP3123523A4 (en) 2017-11-01
EP3123523B1 (en) 2018-10-31
CN106165110A (zh) 2016-11-23
TW201542890A (zh) 2015-11-16
JP6475751B2 (ja) 2019-03-06
CN107815728A (zh) 2018-03-20
KR102348599B1 (ko) 2022-01-07
CN107815728B (zh) 2021-02-09
WO2015148156A1 (en) 2015-10-01

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Granted publication date: 20171208