CN106165073A - The manufacture method of semiconductor substrate, the manufacture method of semiconductor element, semiconductor substrate and semiconductor element - Google Patents

The manufacture method of semiconductor substrate, the manufacture method of semiconductor element, semiconductor substrate and semiconductor element Download PDF

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Publication number
CN106165073A
CN106165073A CN201580018723.7A CN201580018723A CN106165073A CN 106165073 A CN106165073 A CN 106165073A CN 201580018723 A CN201580018723 A CN 201580018723A CN 106165073 A CN106165073 A CN 106165073A
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Prior art keywords
resistive formation
semiconductor substrate
substrate
carbon
semiconductor
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CN106165073B (en
Inventor
佐藤宪
鹿内洋志
后藤博
后藤博一
篠宫胜
土屋庆太郎
萩本和德
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract

The present invention is the manufacture method of a kind of semiconductor substrate, and described semiconductor substrate has: substrate；Initiation layer on described substrate；Resistive formation, it is made up of the nitride semiconductor on described initiation layer, and comprises carbon；And, channel layer, it is made up of the nitride semiconductor on described resistive formation；And, the manufacture method of described semiconductor substrate is characterised by, in the step forming described resistive formation, the design temperature that described semiconductor substrate is heated is made to have gradient, and in the way of the described design temperature at the end of high connductivity layer being formed described design temperature when starting and is formed with resistive formation is set to different temperatures, form described resistive formation.Thus, it is provided that the manufacture method of a kind of semiconductor substrate, it can reduce the Concentraton gradient of the concentration of carbon in resistive formation, and concentration of carbon can be located at desired value.

Description

The manufacture method of semiconductor substrate, the manufacture method of semiconductor element, semiconductor substrate And semiconductor element
Technical field
The present invention relates to the manufacture method of a kind of semiconductor substrate, the manufacture method of semiconductor element, semiconductor substrate with And semiconductor element.
Background technology
Use the semiconductor substrate of nitride-based semiconductor, be used in high frequency and the power component of high output running Deng.Especially, as being applicable to the power component that is amplified with high frequency bands such as microwave, submillimeter wave, millimeter waves, it is known to such as HEMT (High Electron Mobility Transistor:HEMT) etc..
As the semiconductor substrate using nitride-based semiconductor, it is known that a kind of semiconductor substrate, is at Si (silicon) base By initiation layer (initial layer), GaN (gallium nitride) layer, the barrier layer that is made up of AlGaN (aluminium gallium nitride alloy) on plate, sequentially Lamination forms.
The layer (resistive formation) of the bottom in GaN layer, by improving the resistance of vertical and horizontal, it is possible to by promoting crystal The closing property of pipe and the longitudinal leakage current of suppression, reach high pressureization.Therefore, doping carbon and GaN crystallize in form deep energy Rank (level), suppress N-shaped to conduct.
On the other hand, if the layer of the top in GaN layer (about 1 μm), play performance as channel layer, and formation is caught Catch the energy rank of carrier, then may become the reason of current collapse (phenomenon of the repeatability deterioration of output current characteristic), therefore need Fully to reduce carbon isoconcentration.(with reference to patent documentation 1～3).
Additionally, have revealed that during one is by interpolation Fe (ferrum) to GaN layer the technology seeking high resistance at patent documentation 4 (with reference to Fig. 6), also have revealed that a kind of further interpolation carbon so that Fe's can the technology (with reference to Fig. 7) of rank stabilisation.
Prior art literature
Patent documentation
Patent documentation 1: No. 5064824 publications of Japanese Patent Publication No.；
Patent documentation 2: Japanese Unexamined Patent Publication 2006-332367 publication；
Patent documentation 3: Japanese Unexamined Patent Publication 2013-070053 publication.
Summary of the invention
Invent problem to be solved
As above-mentioned, resistive formation, utilize and improve concentration of carbon, carry out the electric leakage of suppression device (device) longitudinally (thickness direction) Stream, is in order to promote the closing property of transistor and to use, contrary, if concentration of carbon is the highest, can cause as shown in Figure 6 on the contrary Increase leakage current.It addition, Fig. 6 is to represent VDSThe concentration of carbon dependence of longitudinal leakage current of (drain source voltage)=800V Figure.
It will be appreciated from fig. 6 that about leakage current characteristic, have in the concentration of carbon of resistive formation just when.Therefore, if high resistance The concentration of carbon of layer has Concentraton gradient, then become can in part with deviation just when the region of concentration of carbon.
It addition, for the growth temperature of nitride-based semiconductor, concentration of carbon and crystallinity also have dependency (with reference to Fig. 7～8: If reduction growth temperature, then can increase concentration of carbon, and reduce crystallinity).
Therefore, the present inventor, is absorbed in concentration of carbon and crystallinity and has phase relative to the growth temperature of nitride-based semiconductor Closing property one thing, finds, for the change of the concentration of carbon in suppressing the GaN of resistive formation to grow up, to be set by design temperature as Fig. 9 For fixed value, but the substrate temperature of reality can reduce about 20 DEG C from initiation layer side toward channel layer side.
This is because along with the growth of nitride-based semiconductor is carried out, the warpage of semiconductor substrate (so-called " can be stuck up towards minus side Bent towards negative " refer to substrate warpage highlightedly) increase, then the central part of semiconductor substrate can play merit away from as heating source The substrate holder of energy, therefore be considered as the reason causing the substrate temperature of reality to decline.
If measuring the concentration curve of the depth direction of the semiconductor substrate utilizing said method to make, then can find high electricity The concentration of carbon of resistance layer be from initiation layer side toward channel layer side increase, this be considered as substrate temperature from initiation layer side toward channel layer side The reason reduced.
So, if the concentration of carbon of resistive formation has Concentraton gradient, then as above-mentioned, can become considerably to use and arrive Concentration of carbon deviation just when region, when using semiconductor substrate so to make semiconductor element, have and cannot obtain The problem of substantially low leakage current characteristic.
Then, the present invention is to complete in view of the above problems, its object is to, it is provided that the manufacture of a kind of semiconductor substrate Method, described manufacture method can reduce the Concentraton gradient of the concentration of carbon of resistive formation, and concentration of carbon can be located at institute's phase The value hoped.
The technological means of solution problem
In order to reach above-mentioned purpose, the present invention provides the manufacture method of a kind of semiconductor substrate, and described semiconductor substrate has Have: substrate；Initiation layer on described substrate；Resistive formation, it is made up of the nitride semiconductor on described initiation layer, and bag Carbon containing；And, channel layer, it is made up of the nitride semiconductor on described resistive formation；Further, described semiconductor substrate Manufacture method is characterised by, in the step forming described resistive formation, makes setting that described semiconductor substrate heats Fixed temperature has gradient, and at the end of resistive formation is formed described design temperature when starting and resistive formation formation Described design temperature is set to the mode of different temperatures, forms described resistive formation.
So, utilize and make the design temperature that semiconductor substrate is heated have gradient, even if semiconductor substrate produces Warpage also can reduce the change of the substrate temperature during resistive formation is grown up, and can reduce the concentration of the concentration of carbon of resistive formation Gradient, if therefore selecting the design temperature of semiconductor substrate in the way of becoming optimal substrate temperature, described the suitableeest When substrate temperature can make the concentration of carbon of resistive formation become just when, and use be made in such a manner semiconductor-based When plate makes semiconductor element, it is possible to obtain substantially low leakage current characteristic.
Now, in the step forming described resistive formation, in order to offset owing to the warpage of described semiconductor substrate is made The temperature become reduces, and is preferably the institute formed by resistive formation at the end of described design temperature when starting is formed with resistive formation State design temperature and be set to different temperatures.
Mode so is utilized to set to the temperature carrying out during resistive formation is formed, it is possible to more effectively to reduce resistive formation The change of the substrate temperature in growth.
Now, it is preferably the described design temperature at the end of being formed by described resistive formation and is set higher than described resistive formation Form described design temperature when starting.
Mode so is utilized to set to the temperature carrying out during resistive formation is formed, it is possible to more reliably to reduce resistive formation The change of the substrate temperature in growth.
Now, it is preferably and the thickness of described resistive formation is set to below more than 500nm and 3 μm.
As long as the thickness of resistive formation is more than 500nm, just it is prevented from the problem that leakage current characteristic reduces, if high electricity The thickness of resistance layer is below 3 μm, is just prevented from the problem that semiconductor substrate is blocked up.
It addition, the present invention provides the manufacture method of a kind of semiconductor element, it is characterised in that use by above-mentioned quasiconductor The semiconductor substrate that the manufacture method of substrate manufactures, and there is step further that form electrode, described step is by electricity Pole is formed on the described channel layer of described semiconductor substrate.
The manufacture method of this kind of semiconductor element, as long as use the manufacture method by the semiconductor substrate such as the present invention Manufacture semiconductor substrate, because the change of the substrate temperature that can reduce during resistive formation is grown up, and high electricity can be reduced The Concentraton gradient of the concentration of carbon of resistance layer, so as the concentration of carbon of resistive formation, if select just when, be just obtained in that fully Low leakage current characteristic.
Further, the present invention provides a kind of semiconductor substrate, and it has: substrate；Initiation layer on described substrate；High resistance Layer, it is made up of the nitride semiconductor on described initiation layer, and comprises carbon；And, channel layer, it is by described resistive formation On nitride-based semiconductor constitute；Described semiconductor substrate is characterised by, in described resistive formation, with { (described initiation layer The concentration of carbon of side)-(concentration of carbon of described channel layer side)/(thickness of described resistive formation) defined in carbon profile, be 1×1018Atom/cm3More than μm and 1 × 1019Atom/cm3Below μm.
As long as the carbon profile in resistive formation is in above-mentioned scope, and as the concentration of carbon of resistive formation, as Fruit select just when, and when using semiconductor substrate so to make semiconductor element, be just obtained in that substantially low electric leakage Properties of flow.
Now, the concentration of carbon of described resistive formation can be set to 1 × 1017Atom/cm3Above and 1 × 1020Atom/cm3With Under.
Concentration of carbon as resistive formation, it is possible to compatibly use concentration range so.
It addition, the present invention provides a kind of semiconductor element, it is characterised in that be to use made by above-mentioned semiconductor substrate Form, and be provided with electrode on described channel layer.
As long as use the semiconductor element made such as the semiconductor substrate of the present invention, if to become optimal The mode of substrate temperature selects the design temperature of semiconductor substrate, described optimal substrate temperature can make the carbon of resistive formation Concentration become just when, be just obtained in that substantially low leakage current characteristic.
Invention effect
As above-mentioned, if the manufacture method of the semiconductor substrate according to the present invention, it is possible to would reduce in resistive formation growth The change of substrate temperature, and the Concentraton gradient of the concentration of carbon of resistive formation can be reduced, if therefore to become optimal The mode of substrate temperature selects the design temperature of semiconductor substrate, described optimal substrate temperature can make the carbon of resistive formation Concentration become just when, and when using the semiconductor substrate being so made to make semiconductor element, be just obtained in that and fill Divide low leakage current characteristic.
Accompanying drawing explanation
Fig. 1 is that the method for making semiconductor representing and using the present invention sets to the temperature in the step forming resistive formation Figure.
Fig. 2 is the figure of the longitudinal leakage current characteristic representing embodiment and comparative example.
Fig. 3 is the profile of the semiconductor substrate of the example representing embodiments of the present invention.
Fig. 4 is the concentration distribution of the depth direction of the semiconductor substrate of the example representing embodiments of the present invention Figure.
Fig. 5 is the profile of the semiconductor element of the example representing embodiments of the present invention.
Fig. 6 is the figure of the concentration of carbon dependence representing longitudinal leakage current.
Fig. 7 is the figure of the growth temperature dependence representing concentration of carbon.
Fig. 8 is the figure of the crystalline growth temperature dependence representing resistive formation.
Fig. 9 is the figure of the transition representing design temperature in the making of semiconductor substrate, substrate temperature.
Detailed description of the invention
As discussed, resistive formation, utilize and improve concentration of carbon, carry out the leakage current of suppression device, in order to promote transistor Closing property and use, as shown in Figure 6, about leakage current characteristic, in the concentration of carbon of resistive formation, have just when.Therefore, as Really the concentration of carbon of resistive formation has Concentraton gradient, can become considerably use concentration of carbon deviation desired just when Region, when using semiconductor substrate so to make semiconductor element, have that cannot to obtain substantially low leakage current special The problem of property.
Therefore, the present inventor makes great efforts to inquire into the manufacture method about a kind of semiconductor substrate repeatedly, and it can reduce height The Concentraton gradient of the concentration of carbon in resistive layer, and concentration of carbon can be located at desired value.As a result of which it is, be found that following True and complete the present invention: in resistive formation is grown up, to make the design temperature that semiconductor substrate is heated have gradient, just The change of substrate temperature during resistive formation is grown up can be reduced, it is possible to reduce the concentration ladder of the concentration of carbon of resistive formation Degree, if selecting the design temperature of semiconductor substrate in the way of becoming optimal substrate temperature, described optimal base Plate temperature can make the concentration of carbon of resistive formation become just when, and use the semiconductor substrate system being made in such a manner When making semiconductor element, substantially low longitudinal leakage current characteristic can be obtained.
Hereinafter, as an example of embodiment, it is described in detail with reference to accompanying drawings, but the present invention is not limited to this side Formula.
First, the semiconductor substrate of an example of the present invention is described with reference to Fig. 3, Fig. 4.
Fig. 3 is the profile of the semiconductor substrate of an example of the present invention, and Fig. 4 is to represent partly leading of an example of the present invention The figure of the concentration distribution of the depth direction of structure base board.
As it is shown on figure 3, semiconductor substrate 10 has: substrate 12；Initiation layer (cushion) 14 on the substrate 12 is set；High Resistive layer 15, it is made up of the nitride semiconductor (such as, gallium nitride) being arranged on initiation layer 14, and comprises as impurity Carbon；And, active layers 22, it is arranged on resistive formation 15.
Herein, the substrate that substrate 12 is e.g. made up of Si or SiC (carborundum).It addition, initiation layer 14 is e.g. by amassing The cushion that layer body is constituted, described laminate is to be formed by following the repeated lamination of each layer: ground floor, it is partly led by nitride Body is constituted；And, the second layer, it is constituted by forming different nitride semiconductors from ground floor.
Ground floor is such as by AlyGa1-yN is constituted, and the second layer is such as by AlxGa1-xN (0≤x≤y≤1) " constitute.
Specifically, ground floor can be set to AlN, and the second layer can be set to GaN.
Active layers 22 has: channel layer 18, and it is constituted by nitrogenizing based semiconductor；And, barrier layer 20, it is logical by being arranged at Nitride semiconductor in channel layer 18 is constituted.Channel layer 18, is e.g. made up of GaN；Barrier layer 20, e.g. by AlGaN Constitute.
In resistive formation 15, with { (concentration of carbon of initiation layer 14 side)-(concentration of carbon of channel layer 18 side) }/(high resistance Layer 15 thickness) defined in carbon profile, can be 1 × 1018Atom/cm3More than μm and 1 × 1019Atom/cm3·μ Below m, preferably 1 × 1018Atom/cm3More than μm and 5 × 1018Atom/cm3Below μm.
It addition, in order to improve electron mobility and suppress current collapse, the concentration of carbon of channel layer 18 can be as shown in Figure 4 It is set to about 1 × 1016Atom/cm3Below.
As long as the concentration of carbon of resistive formation 15 is within the above range, as the concentration of carbon of resistive formation 15, if selected Just when, and when using semiconductor substrate so to make semiconductor element, just it is obtained in that substantially low leakage current characteristic.
It addition, the concentration of carbon of resistive formation can be set to 1 × 1017Atom/cm3Above and 1 × 1020Atom/cm3With Under.
Concentration of carbon as resistive formation, it is possible to be suitable for concentration range so.
It follows that the semiconductor element about an example of the present invention is described with reference to Fig. 5.
Fig. 5 is the profile of the semiconductor element of an example of the present invention.
Semiconductor element 11 is to use the semiconductor element that is made of semiconductor substrate 10, its have the first electrode 26, Second electrode 28, control electrode 30, such electrode is arranged in active layers 22.
In semiconductor subassembly 11, the first electrode 26 and the second electrode 28 are configurations in such a way: electric current, by first Electrode 26, the two-dimensional electron gas layer 24 in being formed from channel layer 18, flow to the second electrode 28.
The electric current of flowing between the first electrode 26 and the second electrode 28, it is possible to by being applied on control electrode 30 Current potential controls.
Semiconductor element 11 is that the semiconductor substrate 10 using the present invention is made, owing to the carbon in resistive formation 15 is dense Degree gradient is adjusted to the least, so as the concentration of carbon of resistive formation 15, if select just when, be just obtained in that fully Low longitudinal leakage current characteristic.
It follows that the manufacture method of the semiconductor substrate about an example of the present invention is described with reference to Fig. 1 and Fig. 3.
The manufacture method of the semiconductor substrate of an example of the present invention, as it is shown on figure 3, be a kind of manufacture semiconductor substrate The method of 10, described semiconductor substrate 10 has: substrate 12；Initiation layer 14 on substrate 12；Resistive formation 15, it is by initiation layer On nitride semiconductor constitute, and comprise carbon；And, channel layer 18, it is by the nitride semiconductor on resistive formation Constitute；Further, the method for described manufacture semiconductor substrate 10, in the step forming resistive formation 15, to semiconductor substrate 10 The design temperature carrying out heating has gradient, and is formed with resistive formation so that resistive formation to be formed design temperature when starting At the end of design temperature be set to the mode of different temperatures, form resistive formation.
Such as, the design temperature in being formed by resistive formation is set in Fig. 9 of fixed value, resistive formation formed in base Plate temperature reduces along with the warpage of semiconductor substrate, in contrast, in FIG, and the setting at the end of being formed with resistive formation The mode of design temperature when temperature starts higher than resistive formation formation, makes the semiconductor substrate in forming resistive formation carry out The design temperature of heating has thermograde so that the substrate temperature during resistive formation is formed becomes fixing.
So, the design temperature making the semiconductor substrate in forming resistive formation heat has gradient, it is possible to fall The change of the substrate temperature in the growth of low resistive formation, thereby, it is possible to reduce the Concentraton gradient of the concentration of carbon of resistive formation, so As the concentration of carbon of resistive formation 15, if select just when, and use the semiconductor substrate being so made to make half During conductor element, just it is obtained in that substantially low leakage current characteristic.
In the step forming resistive formation 15, in order to offset the temperature fall caused due to the warpage of semiconductor substrate 10 Low, it is preferably the design temperature at the end of design temperature when resistive formation is formed beginning is formed from resistive formation and is set to different Temperature.
The temperature carrying out during resistive formation is formed in this manner is utilized to set, it is possible to more effectively to reduce high resistance The change of the substrate temperature in layer growth.
It is preferably: the design temperature at the end of resistive formation is formed, is set higher than resistive formation and forms setting when starting Fixed temperature.
The temperature carrying out during resistive formation is formed in this manner is utilized to set, it is possible to more reliably to reduce high resistance The change of the substrate temperature in layer growth.
The thickness of resistive formation, is preferably set to below more than 500nm and 3 μm.
As long as the thickness of resistive formation is more than 500nm, just it is prevented from the problem that longitudinal leakage current characteristic reduces, as long as The thickness of resistive formation is below 3 μm, is just prevented from the problem that semiconductor substrate is blocked up.
It follows that the manufacture method of the semiconductor element about an example of the present invention is described with reference to Fig. 5.
The manufacture method of the semiconductor element of the present invention, is the manufacturer using the semiconductor substrate by the invention described above The semiconductor substrate 10 that method manufactures, and there is step further that form electrode 26,28,30, described step is by electricity Pole is formed on the channel layer 18 of semiconductor substrate 10.
The manufacture method of this kind of semiconductor element, as long as use manufacturer's legal system of the semiconductor substrate by the present invention The semiconductor substrate created, because the change of the substrate temperature that can reduce during resistive formation is grown up, and can thus drop The Concentraton gradient of the concentration of carbon of low resistive formation, so as the concentration of carbon of resistive formation, if select just when, just can obtain Obtain substantially low leakage current characteristic.
[embodiment]
Below, it is shown that embodiment and comparative example further illustrate the present invention, but the present invention is not limited to these examples Son.
(embodiment)
Use the manufacture method of the semiconductor substrate of described above, make semiconductor substrate as shown in Figure 3.That is, In the way of design temperature at the end of being formed by resistive formation is set higher than the design temperature that resistive formation is formed when starting, make Design temperature has gradient.
It addition, measure the actual substrate temperature during resistive formation is formed with radiation thermometer.The results are shown in Fig. 1.
Further, the semiconductor substrate of use, make semiconductor element as shown in Figure 5, then measure Longitudinal leakage current (substrate current (the Isub)) characteristic of this semiconductor element.The results are shown in Fig. 2.
(comparative example)
Semiconductor substrate is made in the same manner as embodiment.But, the design temperature in being formed by resistive formation is set to fix Value.
It addition, measure the actual substrate temperature during resistive formation is formed with radiation thermometer.The results are shown in Fig. 9.
Further, the semiconductor substrate of use, make semiconductor element as shown in Figure 5, then measure Longitudinal leakage current characteristic of this semiconductor element.The results are shown in the 2nd figure.
From Fig. 1, Fig. 9, compared to the design temperature that semiconductor substrate will be heated in being formed at resistive formation It is set to the comparative example of fixed value, makes the design temperature that semiconductor substrate is heated have gradient in resistive formation is formed Embodiment, the change of actual substrate temperature during its resistive formation is formed reduces.
As shown in Figure 2, compared to the semiconductor element of comparative example, the longitudinal direction electric leakage rheology of the semiconductor element of embodiment Low.
It addition, the present invention is not limited to above-mentioned embodiment.Above-mentioned embodiment is example, and every have and this The substantially identical composition of technical thought that claims of invention are recorded, and produce the invention of identical action effect, all It is contained within the technical scope of the present invention.

Claims (8)

1. a manufacture method for semiconductor substrate, described semiconductor substrate has:
Substrate；
Initiation layer on described substrate；
Resistive formation, is made up of the nitride semiconductor on described initiation layer, and comprises carbon；And,
Channel layer, is made up of the nitride semiconductor on described resistive formation；
Further, the manufacture method of described semiconductor substrate is characterised by,
In the step forming described resistive formation, the design temperature that described semiconductor substrate is heated is made to have gradient, And set resistive formation to be formed the described design temperature at the end of described design temperature when starting is formed with resistive formation For the mode of different temperatures, form described resistive formation.
2. the manufacture method of semiconductor substrate as claimed in claim 1, wherein, in the step forming described resistive formation, Reduce to offset the temperature caused due to the warpage of described semiconductor substrate, resistive formation is formed and sets described in when starting Described design temperature at the end of fixed temperature is formed with resistive formation is set to different temperatures.
3. the manufacture method of semiconductor substrate as claimed in claim 1 or 2, wherein, at the end of being formed described resistive formation Described design temperature be set higher than described resistive formation formed start time described design temperature.
4. the manufacture method of semiconductor substrate as claimed any one in claims 1 to 3, wherein, by described resistive formation Thickness is set to below more than 500nm and 3 μm.
5. the manufacture method of a semiconductor element, it is characterised in that use by according to any one of Claims 1-4 The semiconductor substrate that the manufacture method of semiconductor substrate manufactures, and there is the step forming electrode, described step further Suddenly electrode is formed on the described channel layer of described semiconductor substrate.
6. a semiconductor substrate, it has:
Substrate；
Initiation layer on described substrate；
Resistive formation, is made up of the nitride semiconductor on described initiation layer, and comprises carbon；And,
Channel layer, is made up of the nitride semiconductor on described resistive formation；
Described semiconductor substrate is characterised by, in described resistive formation, in case (concentration of carbon of described initiation layer side)-(described The concentration of carbon of channel layer side) }/(thickness of described resistive formation) defined in carbon profile, be 1 × 1018Atom/cm3·μ More than m and 1 × 1019Atom/cm3Below μm.
7. semiconductor substrate as claimed in claim 6, wherein, the concentration of carbon of described resistive formation is 1 × 1017Atom/cm3With Upper and 1 × 1020Atom/cm3Below.
8. a semiconductor element, it is characterised in that be to use the semiconductor substrate described in claim 6 or 7 made, And on described channel layer, it is provided with electrode.
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