CN106159071A - Led封装体 - Google Patents
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- CN106159071A CN106159071A CN201510196172.5A CN201510196172A CN106159071A CN 106159071 A CN106159071 A CN 106159071A CN 201510196172 A CN201510196172 A CN 201510196172A CN 106159071 A CN106159071 A CN 106159071A
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- 239000002096 quantum dot Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000084 colloidal system Substances 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000005253 cladding Methods 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 239000012798 spherical particle Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 13
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910015894 BeTe Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- -1 MgSe Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
一种LED封装体,包括基板、设置于基板上的LED芯片、将LED芯片收容在内的反射杯,还包括设置在反射层顶端的封装层,所述封装层由透明胶体与多种量子点混合而成,所述每种量子点具有不同的粒径,这些不同粒径的量子点激发不同波长的光线并使激发后的光线在封装层中混合后出射。
Description
技术领域
本发明涉及一种照明装置,特别涉及一种LED封装体。
背景技术
发光二极管(LED)以其节能、环保、持久耐用等特性已经被广泛的应用在照明领域中。
单个的LED芯片只能产生单一波长的单色光,而日常照明中普遍以白光光源为主。为了满足日常的照明需求,目前通常LED芯片通过采用如下两种方式产生白光:一是将分别产生红、绿、蓝色光的的LED芯片组合排布在一起,使其各自产生的单色光混合而成白光;另一种做法是采用蓝光LED芯片搭配黄色荧光粉,通过激发荧光粉产生黄光与蓝光混合产生白光。然而上述方式产生的白光,因单一的LED芯片的出光角度较小使得红绿蓝LED芯片组合后因混光不均匀而导致色彩饱和度欠佳,以及荧光粉受蓝光芯片激发程度不一而使制得的白光LED周缘色彩饱和度不高。
发明内容
有鉴于此,本发明提供一种具有高色彩饱和度且产生白光的LED封装体。
一种LED封装体,包括基板、设置于基板上的LED芯片、将LED芯片收容在内的反射杯,还包括设置在反射层顶端的封装层,所述封装层由透明胶体与多种量子点混合而成,所述每种量子点具有不同的粒径,这些不同粒径的量子点激发不同波长的光线并使激发后的光线在封装层中混合后出射。
在本发明中,自LED芯片出射蓝光经封装胶进入封装层后,所述不同的量子点吸收蓝光后分别激发出绿光、红光。所激发的绿光、红光与LED芯片自身产生的蓝光混合而成白光后自封装层出射。所述量子点受激发的程度相当,且量子点在封装层中各处的密度相同,使得LED封装体各处出光的色彩饱和度高。
附图说明
图1为本发明第一实施例所述发光二极管封装体的剖视图。
图2为本发明第一实施例所述发光二极管封装体中所述量子点激发光的示意图。
图3为图1所述发光二极管封装体的光路图。
图4为本发明第二实施例所述发光二极管封装体的剖视图。
图5为本发明第三实施例所述发光二极管封装体的剖视图。
主要元件符号说明
发光二极管封装体 | 100、100a、100b |
基板 | 10 |
上表面 | 101 |
下表面 | 102 |
LED芯片 | 20 |
导线 | 21 |
反射杯 | 30 |
顶面 | 31 |
内壁 | 32 |
封装胶 | 40 |
封装层 | 50 |
透明胶体 | 51 |
量子点 | 52 |
第一量子点 | 521 |
第二量子点 | 522 |
散射体 | 53 |
扩散层 | 60 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
如图1所示,本发明第一实施例所述发光二极管封装体100包括一基板10、设置于基板10上的LED芯片20、反射杯30、填充于反射杯30内的封装胶40,以及设置于反射杯30之上的封装层50。
所述基板10为由散热材料制成的板体,其具有一上表面101和与上表面101相对的下表面102。
所述LED芯片20设置于基板10的上表面101且通过导线21与基板10电连通。在本实施例中,所述LED芯片20为蓝光芯片。
所述反射杯30设置于基板10的上表面101并围绕所述LED芯片20、导线21。在本实施例中,所述反射杯30与基板10为一体成型。可以理解的,所述反射杯30与基板10可独立成型,然后通过粘结等手段结合在一起。所述反射杯30呈环状,其包括一水平的顶面31、自顶面31里端朝向基板10的上表面101向下、向内倾斜延伸而成的内壁32。所述反射杯30的外侧壁33自顶面31的外端朝向与基板10垂直方向延伸且与基板10的外侧壁共面。自LED芯片20产生的光线经反射杯30的内壁32的反射后自反射杯30的顶面31的上方出射。所述内壁32上可设置一层高反射率材料制成的反射层(图未示)或者粗糙结构(图未示),从而进一步的提高反射杯30的反射效率。
所述封装胶40由透明材料制成,其填充于所述反射杯30内并包覆所述LED芯片20、导线21于其内。所述封装胶40的顶部与反射杯30的顶面31共面。所述封装胶40用于防止外部的水汽、灰尘等微粒与LED芯片20接触而影响其发光特性。
所述封装层50设于所述的反射杯30之上且密封所述封装胶体40于反射杯30内,其外周缘与反射杯30外侧壁33共面。所述封装层50厚度均匀。所述封装层50由透明胶体51与量子点52混合而成。所述量子点52的密度在封装层50中处处一致。所述透明胶体51可与所述封装胶40的材料相同。
所述量子点52为由II-VI族化合物与III-V族化合物产生化学反应而成的颗粒状的晶体,并在该晶体外部包覆一层有机或无机分子而形成最终的球形的微粒。所述量子点52也可以由II-VI族化合物或者III-V族化合物组成。所述量子点52的直径为2-20纳米。所述II-VI族化合物为 BeS, BeSe, BeTe,
MgSe, CdS, CdSe, CdTe 等;所述III-V族化合物为 AlN, AlP, AlAs,
AlSb, GaP, GaAs, InP, InAs等。所述量子点52因其自身的粒径不同和形成材料的能带结构不同而会激发不同光波。
在本实施例中,所述量子点52包括第一量子点521和第二量子点522。所述第一量子点521和第二量子点522按照特定的比例混合于透明胶体51中。具体的,第一量子点521和第二量子点522在所述透明胶体51中各处密度一致,其具体的混合比例取决于发光二极管封装体的色温值。
请同时参考图2,在本实施例中,所述量子点52的材料相同,所述量子点52激发光波的波长与所述量子点52的粒径呈正比。所述第一量子点521的粒径为5-6nm,所述第一量子点521吸收蓝光后因自身能级结构发生变化而激发出红光;所述第二量子点522的粒径为2.5-3nm,所述第二量子点522吸收蓝光后因自身能级结构发生变化而激发出绿光。
如图3所示,在本发明中,自LED芯片20出射蓝光经封装胶40进入封装层50后,所述第一量子点521吸收蓝光后激发出绿光,所述第二量子点522吸收蓝光后激发出红光。所激发的绿光、红光与LED芯片20自身产生的蓝光在封装层50中混合后生成白光自封装层50出射。所述第一量子点521和第二量子点522受所述LED芯片20产生的蓝光的激发程度一致,且所述第一量子点521和第二量子点522在所述封装层50中各处的密度一致,因此LED封装体100各处出射光线的色彩饱和度高。
如图4所示,本发明第二实施例中所述发光二极管封装体100a与第一实施例中所述发光二极管封装体100相似,不同之处在于:在所述发光二极管封装体100a中,所述封装层50中还包括有散射体53。所述散射体53由高反射率材料制成。因此自LED芯片20出射的光线进入所述封装层50后,光线会被散射体53扩散,从而增加了光线在封装层50内的路径而增加了光线撞击量子点52的几率。如此可增加量子点52的利用率而提高光线被激发程度而达到较高的色彩饱和度,而且在保证混光效果和饱和度的同时也可以减少量子点52的数量而降低生产成本。
如图5所示为本发明第三实施例中所述发光二极管封装体100b,其与第一实施例所述发光二极管封装体100不同之处在于:还包括一扩散层60。所述扩散层60由透明胶体51与散射体53混合而成。所述扩散层60设置于反射杯30于所述封装层50之间。所述扩散层60的外周缘、封装层50的外周缘及反射杯30的外周缘均共面。自LED芯片出射的光线首先经扩散层60的扩散后进入封装层50。
Claims (10)
1.一种LED封装体,包括基板、设置于基板上的LED芯片、将LED芯片收容在内的反射杯,其特征在于:还包括设置在反射层顶端的封装层,所述封装层由透明胶体与多种量子点混合而成,所述每种量子点具有不同的粒径,这些不同粒径的量子点激发不同波长的光线并使激发后的光线在封装层中混合后出射。
2.如权利要求1所述LED封装体,其特征在于:同种材料制成的量子点激发光波的波长与所述量子点的粒径成正比。
3.如权利要求1所述LED封装体,其特征在于:所述量子点由II-VI族化合物与III-V族化合物化学反应而成的颗粒状的晶体,并在该晶体外部包覆一层有机或无机分子而形成的球形微粒。
4.如权利要求1所述LED封装体,其特征在于:所述量子点由II-VI族化合物或者III-V族化合物组成。
5.如权利要求1所述LED封装体,其特征在于:所述量子点包括第一量子点和第二量子点,所述第一量子点吸收蓝光并激发出绿光,所述第二量子点吸收蓝光并激发红光。
6.如权利要求5所述LED封装体,其特征在于:所述第一量子点和第二量子点按照特定的比例混合于所述透明胶体中。
7.如权利要求1所述LED封装体,其特征在于:所述封装层设于反射杯之上,其外周缘与反射杯的外周缘共面。
8.如权利要求1所述LED封装体,其特征在于:所述封装层中还包括有散射体,所述散射体有高反射率材料制成,其用于散射自LED芯片产生的光线。
9.如权利要求1所述LED封装体,其特征在于:还包括一扩散层,所述扩散层设置于反射杯与封装层之间,所述的封装层由胶体与散射体混合而成。
10.如权利要求9所述LED封装体,其特征在于:所述扩散层的外周缘、封装层的外周缘及反射杯的外侧壁共面。
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CN201510196172.5A CN106159071A (zh) | 2015-04-23 | 2015-04-23 | Led封装体 |
US14/866,383 US20160315229A1 (en) | 2015-04-23 | 2015-09-25 | Light emitting diode package utilizing quantum dots |
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CN201510196172.5A CN106159071A (zh) | 2015-04-23 | 2015-04-23 | Led封装体 |
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CN114911093A (zh) * | 2021-02-08 | 2022-08-16 | 展晶科技(深圳)有限公司 | 发光二极管装置、背光模组和液晶显示装置 |
CN113719805A (zh) * | 2021-09-03 | 2021-11-30 | 厦门市米宫科技有限公司 | 一种量子点反光材料及其制备方法和应用 |
-
2015
- 2015-04-23 CN CN201510196172.5A patent/CN106159071A/zh active Pending
- 2015-09-25 US US14/866,383 patent/US20160315229A1/en not_active Abandoned
Cited By (7)
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CN106449943A (zh) * | 2016-11-30 | 2017-02-22 | 芜湖聚飞光电科技有限公司 | 一种倒装型量子点led灯珠的成型封装方法 |
CN107331764A (zh) * | 2017-08-14 | 2017-11-07 | 天津中环电子照明科技有限公司 | 量子点层反射式led封装器件及灯具 |
CN110797369A (zh) * | 2018-05-28 | 2020-02-14 | 鸿富锦精密工业(深圳)有限公司 | 微型发光二极管显示面板 |
TWI713233B (zh) * | 2019-05-24 | 2020-12-11 | 李崇華 | 發光二極體 |
US11538961B2 (en) | 2019-05-24 | 2022-12-27 | Chung-Hwa Lee | Light-emitting diode |
CN112909147A (zh) * | 2019-11-19 | 2021-06-04 | 深圳Tcl新技术有限公司 | 一种量子点led及其制备方法 |
CN114333614A (zh) * | 2020-09-28 | 2022-04-12 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
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