CN106159037A - A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof - Google Patents
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof Download PDFInfo
- Publication number
- CN106159037A CN106159037A CN201510179496.8A CN201510179496A CN106159037A CN 106159037 A CN106159037 A CN 106159037A CN 201510179496 A CN201510179496 A CN 201510179496A CN 106159037 A CN106159037 A CN 106159037A
- Authority
- CN
- China
- Prior art keywords
- chamber
- film
- cell substrate
- plated film
- cadmium sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 title claims abstract description 102
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims abstract description 39
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000001556 precipitation Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000005987 sulfurization reaction Methods 0.000 claims abstract description 32
- 230000003139 buffering effect Effects 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 description 7
- 239000011669 selenium Substances 0.000 description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002894 chemical waste Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000004073 vulcanization Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention proposes a kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof, what curing diaphragm layer precipitation equipment was installed successively enter sheet chamber, high temperature selenizing/sulfuration chamber, selenizing/sulfuration cooling chamber, plated film cushion chamber, cell substrate plated film chamber, buffering slice chamber, slice intracavity portion are provided with the roller driving cell substrate to move, and complete the cell substrate after selenization process or selenizing/sulfuration process and are being not exposed in air directly be connected cell substrate plated film chamber through plated film cushion chamber；Cell substrate plated film chamber uses magnetron sputtering deposition cadmium sulphide film layer, battery obsorbing layer is made to be not exposed in air before entering plated film chamber, so will not there is oxidation reaction, water vapor absorption or the pollution of other impurity, directly carry out the mode of the deposition of cadmium sulphide film layer, the most contaminated P-N junction can be formed, novel in design, it is a kind of well innovation scheme, has very much marketing prospect.
Description
Technical field
The present invention relates to heliotechnics, particularly relate to a kind of thin-film solar cells cadmium sulfide film deposition
Devices and methods therefor.
Background technology
Copper-indium-galliun-selenium film solar cell has that production cost is low, it is little to pollute, does not fails, low light level performance
The distinguishing feature such as good, photoelectric transformation efficiency occupies first of various thin-film solar cells, close to crystalline silicon too
Sun energy battery, cost is then 1/3rd of crystal silicon cell, is referred to as the novel thin film sun in the world
Energy battery, but it is higher to the requirement of technique and preparation condition.
Specifically, copper-indium-galliun-selenium film solar cell is made up of four-level membrane, first on substrate
Layer film is hearth electrode, and normally used is molybdenum.The second layer is CIGS thin-film, referred to as absorbed layer.
It is free electron that this layer is used to change the photon absorbed, and it is to determine battery conversion efficiency most critical
Film layer.Third layer is context layer (i.e. curing diaphragm layer), and the 4th layer is top electrode (TCO).
Curing diaphragm layer is the N-type layer of composition battery P-N junction, and it combines group with absorbed layer (P-type layer)
Become the P-N junction of battery.Make the crucial film layer sulfur in indium gallium selenium thin-film solar cells production process
The deposition plating of cadmium film layer, general industry circle uses wet method cadmium sulfide deposition plating, or is referred to as changing
Learn immersion method plated film, and the shortcoming of wet method cadmium sulfide deposition plating is to produce waste water to cause the dirt to environment
Dye is destroyed, thus affects our ecological environment.In order to avoid polluting environment, it is necessary for chemical waste fluid
Processing, add the most again production cost, and make the operation of production become complicated, impact produces
Progress.
In sum, for problem of the prior art, it is accordingly required in particular to thin-film solar cells cadmium sulphide film layer
Precipitation equipment and method thereof, to solve the deficiencies in the prior art.
Summary of the invention
It is an object of the invention to provide thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof, i.e.
Use magnetron sputtering mode to deposit cadmium sulphide film layer, reach not use chemical solution, thus avoid
The series of problems that chemical waste fluid processes.
The present invention solves that its technical problem be employed technical scheme comprise that,
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment, curing diaphragm lamination device is installed successively
Enter sheet chamber, high temperature selenizing/sulfuration chamber, selenizing/sulfuration cooling chamber, plated film cushion chamber, cell substrate plating
Film chamber, buffering slice chamber, slice intracavity portion are provided with the roller driving cell substrate to move, and complete selenium
Cell substrate after metallization processes or selenizing/sulfuration process is being not exposed in air through plated film cushion chamber
And directly it is connected cell substrate plated film chamber；Cell substrate plated film chamber uses magnetron sputtering deposition cadmium sulphide film layer.
Further, described shielding power supply uses midfrequent AC power supply and the twin negative electrode of plane.
Further, described shielding power supply uses radio-frequency power supply, radio-frequency power supply linking to have RF impedance to regulate
Box, negative electrode uses planar cathode.
Further, described shielding power supply uses direct current pulse power source, and negative electrode uses planar cathode.
Further, described enter sheet chamber, high temperature selenizing/sulfuration chamber, selenizing/sulfuration cooling chamber, plated film delay
Rush chamber, cell substrate plated film chamber, buffering slice chamber, slice chamber above be provided with separation valve door, plated film
Cushion chamber, cell substrate plated film chamber, the top in buffering slice chamber are mounted on vacuum pump, plated film cushion chamber,
Cell substrate plated film chamber, buffering slice chamber belong to vacuum cavity.
Further, described cell substrate is horizontal positioned in curing diaphragm lamination device.
Further, described cell substrate is disposed vertically in curing diaphragm lamination device.
Further, described cell substrate is placed with vertical plane in curing diaphragm lamination device, inclines
Tiltedly angle is 5 degree of-10 degree.
Present invention also offers a kind of thin-film solar cells cadmium sulphide film deposition method, cell substrate exists
Selenizing/sulfuration cooling chamber completes selenization process and sulfuration process and enters plated film cushion chamber, through high temperature selenizing/
After sulfuration chamber, selenizing/sulfuration cooling chamber, cell substrate creates the battery suction that CIGS quaternary crystallizes mutually
Receive layer, battery obsorbing layer is not exposed in air, so will not have oxidation reaction, water vapor absorption or other
The pollution of impurity, cell substrate enters cell substrate plated film chamber by plated film cushion chamber, i.e. uses magnetic control to spatter
Mode of penetrating, to deposit cadmium sulphide film layer, covers last layer cadmium sulphide film layer again, constitutes after battery obsorbing layer
The most critical structure of hull cell, thus define the most contaminated P-N junction, cadmium sulphide membrane layer deposits
Complete meron enter buffering slice chamber, close cell substrate plated film chamber separation valve door, cell substrate by
Buffering slice chamber enters slice chamber.
Further, plated film cushion chamber and cell substrate plated film chamber are vacuum state when coating process, vacuum
Pressure is 1mTorr to 20mTorr, and selenizing/sulfuration cooling chamber that plated film cushion chamber connects can be vacuum
Cavity, it is also possible to for there being the positive air pressure of gas shield, i.e. 1 atmospheric pressure or the gas more than 1 atmospheric pressure
Body protection cavity, protective gas uses nitrogen.
It is an advantage of the current invention that this product structure is simple, make through this road technique of high temperature selenizing/vulcanize it
After create the battery obsorbing layer that CIGS quaternary crystallizes mutually, make battery obsorbing layer enter plated film chamber it
Before be not exposed in air, so will not have the pollution of oxidation reaction, water vapor absorption or other impurity, directly
Tap into the mode of the deposition of row cadmium sulphide film layer, the most contaminated P-N junction can be formed, novel in design, be
A kind of well innovation scheme, has marketing prospect very much.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention proposes；
In figure, 100-enters sheet chamber, 110-high temperature selenizing/sulfuration chamber, 120-selenizing/sulfuration cooling chamber, 130-
Plated film cushion chamber, 140-cell substrate plated film chamber, 150-buffers slice chamber, 160-slice chamber, 170-
Separation valve door, 180-cell substrate, 190-roller, 210-vacuum pump, 220-midfrequent AC power supply, 230-
The twin negative electrode of plane, 240-radio-frequency power supply, 250-RF impedance damper box, 260-planar cathode.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and effect and be readily apparent from
Solve, below in conjunction with diagram and specific embodiment, the present invention is expanded on further.
As it is shown in figure 1, a kind of thin-film solar cells cadmium sulphide film layer precipitation equipment that the present invention proposes,
What curing diaphragm lamination device was installed successively enters sheet chamber 100, high temperature selenizing/sulfuration chamber 110, selenizing/sulfuration
Cooling chamber 120, plated film cushion chamber 130, cell substrate plated film chamber 140, buffering slice chamber 150, slice
Chamber 160 is internal is provided with the roller 190 driving cell substrate to move, and completes selenization process or selenizing/sulfur
Cell substrate after metallization processes is being not exposed in air to be directly connected electricity through plated film cushion chamber 130
Substrate coating chamber, pond 140；Cell substrate plated film chamber 140 uses magnetron sputtering deposition cadmium sulphide film layer.
Shielding power supply uses midfrequent AC power supply and the twin negative electrode of plane 230 in the first embodiment.
Shielding power supply uses radio-frequency power supply 240, radio-frequency power supply 240 in a second embodiment of the present invention
Linking has RF impedance damper box 250, and negative electrode uses planar cathode 260.
In third embodiment of the invention, shielding power supply uses direct current pulse power source, and negative electrode uses planar cathode.
Cell substrate lies in a horizontal plane in can be with horizontal positioned in each chamber of curing diaphragm lamination device, it is possible to
To be disposed vertically, it is also possible to have certain angle to place with vertical, the angular range of angle is 5
Degree-10 degree, can determine according to actual requirement.
It addition, enter sheet chamber 100, high temperature selenizing/sulfuration chamber 110, selenizing/sulfuration cooling chamber 120, plated film
Cushion chamber 130, cell substrate plated film chamber 140, buffering are respectively provided with above slice chamber 150, slice chamber 160
There is separation valve door 170.Plated film cushion chamber 130, cell substrate plated film chamber 140, buffering slice chamber 150
Top is mounted on vacuum pump 210, plated film cushion chamber 130, cell substrate plated film chamber 140, buffering slice
Chamber 150 belongs to vacuum cavity.
Copper-indium-galliun-selenium film solar cell can use soda-lime glass, battery thin film be formed with the first step,
Deposition molybdenum film forms hearth electrode；Second step, deposition CIGS forms preformed layer；3rd step, at selenium
CIGS crystal is generated in change/vulcanization reaction cavity；4th step, forms cadmium sulphide membrane；5th step,
Form summit very thin films.The present invention is used in above third step and the 4th step, i.e. selenizing/vulcanization reaction
And after generating CIGS crystal, cell substrates is not exposed in air be directly entered cadmium sulphide membrane
Depositing operation.This two step completes the critical process that in copper indium gallium selenide cell, P-N junction is formed.
Cell substrate initially enters into sheet chamber 100, subsequently into high temperature selenizing/sulfuration chamber 110, at high temperature
Under (450～600 DEG C) and selenium steam atmosphere defines CIGS quaternary phase crystal.Then enter selenium
Changing/sulfuration cooling chamber 120, temperature is down to room temperature, or less than less than 200 DEG C.This intracavity or have gas to protect
Protecting, such as nitrogen, air pressure is at 1 atm higher, or at vacuum state, vacuum degree control is being less than
Below 200mTorr.In a word, in selenizing/sulfuration cooling chamber 120 content of oxygen control 10PPM or with
Under.After temperature reaches controlling value, opening separation valve door, substrate enters plated film cushion chamber 130；Very
Under the effect of empty pump 210, after the vacuum of plated film cushion chamber 130 reaches plated film vacuum, plated film buffers
The separation valve door in chamber 130 is opened, and substrate enters cell substrate plated film chamber 140, starts sputter coating.Electricity
The vacuum pressure in substrate coating chamber, pond 140 can be controlled between 1mTorr to 20mTorr.Shielding power supply can
Use midfrequent AC power supply, coordinate the twin negative electrode of plane；May be used without radio-frequency power supply, or use pulse straight
Stream power supply.Negative electrode uses planar cathode.Battery obsorbing layer covers last layer cadmium sulphide film layer, constitutes thin
The most critical structure of film battery, thus define the most contaminated P-N junction, cadmium sulphide membrane layer has deposited
Becoming meron to enter buffering slice chamber 150, cell substrate enters slice chamber 160 by buffering slice chamber.
This inventive structure is simple, makes to create CIGS four after high temperature selenizing/vulcanize this road technique
The battery obsorbing layer that unit crystallizes mutually, makes battery obsorbing layer be not exposed in air, and oxidation so will not be had anti-
Should, water vapor absorption or the pollution of other impurity, directly carry out the deposition of cadmium sulphide film layer, formed and do not get dirty
The P-N junction of dye, novel in design, it is a kind of well innovation scheme, has very much marketing prospect.
The ultimate principle of the present invention, principal character and advantages of the present invention have more than been shown and described.One's own profession
Skilled person will appreciate that of industry, the present invention is not restricted to the described embodiments, above-described embodiment and explanation
The principle that the present invention is simply described described in book, without departing from the spirit and scope of the present invention originally
Invention also has various changes and modifications, and these changes and improvements both fall within scope of the claimed invention
In.Claimed scope is defined by appending claims and equivalent thereof.
Claims (10)
1. a thin-film solar cells cadmium sulphide film layer precipitation equipment, curing diaphragm layer precipitation equipment is successively
That installs enters sheet chamber, high temperature selenizing/sulfuration chamber, selenizing/sulfuration cooling chamber, plated film cushion chamber, battery base
Sheet plated film chamber, buffering slice chamber, slice intracavity portion are provided with the roller driving cell substrate to move, its
It is characterised by: complete the cell substrate after selenization process or selenizing/sulfuration process through plated film cushion chamber
It is not exposed in air directly be connected cell substrate plated film chamber；Cell substrate plated film chamber uses magnetron sputtering
Deposition cadmium sulphide film layer.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described shielding power supply uses midfrequent AC power supply and the twin negative electrode of plane.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described shielding power supply uses radio-frequency power supply, radio-frequency power supply linking to have RF impedance damper box,
Negative electrode uses planar cathode.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
Being characterised by: described shielding power supply uses direct current pulse power source, negative electrode uses planar cathode.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described enters sheet chamber, high temperature selenizing/sulfuration chamber, selenizing/sulfuration cooling chamber, plated film buffering
Chamber, cell substrate plated film chamber, buffering are provided with separation valve door above slice chamber, slice chamber, and plated film delays
Rush chamber, cell substrate plated film chamber, the top in buffering slice chamber are mounted on vacuum pump, plated film cushion chamber,
Cell substrate plated film chamber, buffering slice chamber belong to vacuum cavity.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described cell substrate is horizontal positioned in curing diaphragm layer precipitation equipment.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described cell substrate is disposed vertically in curing diaphragm layer precipitation equipment.
A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment the most according to claim 1, its
It is characterised by: described cell substrate is placed with vertical plane in curing diaphragm lamination device, tilts
Angle is 5 degree of-10 degree.
9. a thin-film solar cells cadmium sulphide film deposition method, it is characterised in that: cell substrate exists
Selenizing/sulfuration cooling chamber completes selenization process and sulfuration process and enters plated film cushion chamber, through high temperature selenizing/
After sulfuration chamber, selenizing/sulfuration cooling chamber, cell substrate creates the battery suction that CIGS quaternary crystallizes mutually
Receive layer, battery obsorbing layer is not exposed in air, so will not have oxidation reaction, water vapor absorption or other
The pollution of impurity, cell substrate enters cell substrate plated film chamber by plated film cushion chamber, i.e. uses magnetic control to spatter
Mode of penetrating, to deposit cadmium sulphide film layer, covers last layer cadmium sulphide film layer again, constitutes after battery obsorbing layer
The most critical structure of hull cell, thus define the most contaminated P-N junction, cadmium sulphide membrane layer deposits
Complete meron enter buffering slice chamber, close cell substrate plated film chamber separation valve door, cell substrate by
Buffering slice chamber enters slice chamber.
A kind of thin-film solar cells cadmium sulphide film deposition method the most according to claim 9, its
It is characterised by: plated film cushion chamber and cell substrate plated film chamber are vacuum state when coating process, Vacuum Pressure
Power is 1mTorr to 20mTorr, and selenizing/sulfuration cooling chamber that plated film cushion chamber connects can be vacuum chamber
Body, it is also possible to for there being the positive air pressure of gas shield, i.e. 1 atmospheric pressure or the gas more than 1 atmospheric pressure
Protection cavity, protective gas uses nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179496.8A CN106159037A (en) | 2015-04-15 | 2015-04-15 | A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179496.8A CN106159037A (en) | 2015-04-15 | 2015-04-15 | A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106159037A true CN106159037A (en) | 2016-11-23 |
Family
ID=58057773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510179496.8A Pending CN106159037A (en) | 2015-04-15 | 2015-04-15 | A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159037A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913810A (en) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | Vacuum magnetron sputtering coating film production line |
-
2015
- 2015-04-15 CN CN201510179496.8A patent/CN106159037A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913810A (en) * | 2017-12-13 | 2019-06-21 | 湘潭宏大真空技术股份有限公司 | Vacuum magnetron sputtering coating film production line |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI520366B (en) | In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials | |
| JP5246839B2 (en) | Semiconductor thin film manufacturing method, semiconductor thin film manufacturing apparatus, photoelectric conversion element manufacturing method, and photoelectric conversion element | |
| CN101814553B (en) | Light-assistant method for preparing light absorption layer of copper-indium-gallium-selenium film solar cell | |
| CN102694066B (en) | Method for improving photoelectric conversion efficiency of solar cell panel | |
| CN101609860A (en) | CdTe thin-film solar cells preparation method | |
| CN104143587A (en) | Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells | |
| CN104681642A (en) | Oxygen plasma back electrode processing technology capable of improving performance of copper indium gallium selenide thin-film solar cell | |
| CN106653897A (en) | Copper, zinc, tin, sulfur and selenium thin film solar cell and preparation method therefor | |
| CN102437237A (en) | Chalcopyrite type thin film solar cell and manufacturing method thereof | |
| CN109638096A (en) | A kind of compound semiconductor thin film solar cell preparation method | |
| CN103602982A (en) | Non-vacuum preparation method of light absorption layer of copper indium gallium sulfur selenium (CIGSSe) thin film solar cell | |
| CN106159037A (en) | A kind of thin-film solar cells cadmium sulphide film layer precipitation equipment and method thereof | |
| CN203932119U (en) | Graphene electrodes fexible film perovskite solar cell | |
| CN109817751A (en) | A kind of cadmium telluride diaphragm solar battery and its optimization post-processing approach | |
| CN102709393A (en) | Method for preparing thin-film solar cells from copper-zinc-tin sulfur compound single target materials | |
| CN105489672A (en) | Method for preparing copper indium diselenide photoelectric thin film by chloride system through two-step method | |
| CN105552166A (en) | Method for preparing copper-indium-diselenide photoelectric film by two-step method of nitrate system | |
| CN105047736B (en) | Preparation method for cadmium-free buffer layer material of CIGS thin film solar cell | |
| CN204614804U (en) | Copper indium gallium selenium solar cell P-N junction forming apparatus | |
| CN203553200U (en) | Large-scale producing device for solar-energy film cell assembly | |
| EP2860281A1 (en) | Method of recycling solution, solar cell including buffer layer formed by the method, and deposition apparatus | |
| CN101707218B (en) | Preparation method of common pole-type thin film solar cell | |
| CN105529243A (en) | Method for copper indium diselenide optoelectronic film by sulphate system in two-step process | |
| CN105932093B (en) | A kind of preparation method of high quality CIGS thin film solar battery obsorbing layer | |
| CN105489673A (en) | Method for preparing copper-indium sulfide photoelectric thin film by chloride system through two-step method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161123 |