CN106154051A - Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm - Google Patents
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Abstract
nullThe present invention proposes a kind of free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm，Belong to microwave and millimeter wave dielectric substance complex dielectric permittivity technical field of measurement and test，The present invention is based on free space terminal short circuit，Detected materials under the condition of high temperature is made longitudinal layered process by temperature gradient distribution，The method using the linear interpolation of Temperature Distribution derives the complex dielectric permittivity expression formula of each layer temperature and correspondence thereof，The cascade network formed after utilizing layering sets up the relation of one port scattering parameter and each layer complex dielectric permittivity，By the complex dielectric permittivity of dielectric material under vector network analyzer test one port scattering parameter and then acquisition actual temperature，Use such scheme，Can more precisely carry out material complex dielectric permittivity high temperature test，By setting up thermal stratification matching algorithm，Reduce the test error that material its internal temperature uneven distribution at high operating temperatures introduces.
Description
Technical field
The invention belongs to microwave, millimeter wave dielectric Material Testing Technology field, multiple particularly to material at high temperature or superhigh temperature
Dielectric constant method of testing.
Background technology
High temperature microwave material is often used in the field such as space flight and aviation, missile guidance.The aircraft of high airflight, lead
Bullet, rocket, spacecraft etc., owing to the friction under high-speed flight state and between air causes the temperature of its Surface microwave material
Spending the highest, and the electromagnetic parameter that microwave material is under the high temperature conditions is nonlinear change, their Changing Pattern is difficult to grasp.This
Aircraft antenna will be sent, receive signal generation strong influence by sample.Therefore, accurately test, analyze these microwave materials Jie
Electrical quantity situation of change in high temperature environments, under the design of the parts such as aircraft antenna house and high-speed flight state can
By Journal of Sex Research, there is most important effect.For in high temperature environments the electromagnetic parameter of microwave material being launched testing research, no
The scope of application of method of testing to be considered, is accounted in the realization of high temperature test simulated environment and hot environment more simultaneously
For complicated influence factor.The complexity of high-temperature test system, comprehensive more much higher than under normal temperature environment, especially test
Accuracy is more much lower than under normal temperature condition, the most accurately tests out the electromagnetic parameter under microwave dielectric material high temperature and remains one
A difficult problem.
For the selection of method of testing, it is excellent that terminal short circuit has that test operation is simple, systematic error is few, heating is convenient etc.
Point.Terminal short circuit partial wave again leads terminal short circuit and free space terminal short circuit.The former advantage is test fixture structure
Simply, sample size is little and can thermally equivalent etc.；Shortcoming is that high temperature waveguide is expensive and service life is short, sample size
Need to match with waveguide cross-section.The latter's advantage be the focusing anteena as test fixture away from sample, its thermal radiation
Acting on little, thus service life is longer, sample is relatively low to requirement on machining accuracy simultaneously；Shortcoming is sample latter dimensional requirement relatively
Greatly (generally higher than 3 times of focal spots of focusing anteena), and sample be heated uneven (near heating platform side detected materials temperature ratio
Higher, and the detected materials temperature ratio away from heating platform side is relatively low).
For free space terminal short circuit, uneven owing to being heated in heating process, within detected materials temperature
Being extremely unstable, the distribution of each portion temperature is different from.The only some region of temperature of test sample (in traditional test
As obtain the temperature of sample area of platform of being close to generate heat by measuring metal heating platform temperature) and overall as sample
Temperature, and along with the rising of temperature, especially under superhigh temperature, other region actual temperatures of sample can be the most inclined with test temperature
Difference, this causes measuring the complex dielectric permittivity obtained and is not correspond to actual temperature, causes test error.Therefore treat under the condition of high temperature
Measure and monitor the growth of standing timber and expect that the analysis of physical model must carry out distribution process to different temperatures region, and use suitable algorithm to revise these
High temperature test error, more precisely to obtain the complex dielectric permittivity under actual temperature.
Summary of the invention
Present invention aims in existing free space terminal short circuit high-temperature complex dielectric measuring technology not
Consider that Temperature Distribution affects this problem, propose a kind of material at high temperature dielectric constant temperature for free space terminal short-circuit system
Degree layering and matching algorithm.
Technical solution of the present invention is as follows:
A kind of free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm, comprises the following steps:
Step 1: test system is carried out free space single port calibration；
Step 2: load plate material to be measured, plate material thickness to be measured is l, and its lateral dimension is more than point focusing lens sky
3 times of focal spots of line, plate material to be measured is close to metal heating platform and makes plate material upper surface to be measured as test reference face；
Step 3: utilize metal heating platform to treat master plate material and heat, measure plate material to be measured upper and lower
Temperature T of both sidesOn ()And TUnder (), it is apparent from TOn ()≤TUnder ()；
Step 4: as temperature difference i.e. T in allowed band Δ T of the upper and lower both sides of plate material to be measuredUnder ()-TOn ()≤ΔT
Time, being approximately considered plate material temperature perseverance to be measured is TUnder (), utilize vector network analyzer to measure at plate material upper surface to be measured
Reflection coefficient S11, according to formulaCalculate temperature TUnder ()Corresponding plate material to be measured
Relative complex dielectric permittivity εr, wherein γ0For the propagation constant in free space, γ0=j2 π/λ0, λ0For free space wavelength；
Step 5: continue heating, when the temperature difference of the upper and lower both sides of plate material to be measured reaches Δ T critical state, record
Upper and lower side test temperature TOn ()And TUnder (), and by the T under this critical stateUnder ()It is designated as Tc；Now will plate material to be measured as
One layer, step 4 obtain TcCorresponding relative complex dielectric permittivity εrc；
Step 6: continue heating, after the temperature difference of upper and lower both sides exceeds Δ T, presses longitudinal temperature by plate material to be measured
Be distributed in be perpendicular to metal heating platform direction be divided into N shell, ground floor to be close to heating platform, its temperature is T1, corresponding is relative
Complex dielectric permittivity is εr1；The temperature of n-th layer is TN, corresponding relative complex dielectric permittivity is εrN, every layer thickness is d=l/N；
Step 7: continue heating and make TOn ()=Tc, now have TN=Tc, εrN=εrc；With TcCorresponding dielectric relatively again is normal
Number εrcOn the basis of, by introducing ground floor temperature T1And complex dielectric permittivity ε of correspondencer1And combine number of plies N, to each layer after layering
Material temperature value carries out interpolation calculation with relative complex permittivity values and obtains temperature T of every layernAnd complex dielectric permittivity εrn, further
By each layer thickness d and complex dielectric permittivity εrnObtain the transmission matrix of layers of material, in conjunction with cascade characteristic and the transmission of transmission matrix
Parameter and the transformational relation of scattering parameter, by measuring S11And substitute into complex dielectric permittivity ε solving ground floor materialr1, and then obtain
Obtain the complex dielectric permittivity under remaining layers of material different temperatures；Obtain different temperature from low temperature to high temperature temperature variation testing one by one to divide
Layer state, obtains during high temperature the complex dielectric permittivity of material under actual temperature the most more accurately.
It is preferred that, described step 7 further includes steps of
Step 7-1: continue heating and make side test temperature T on plate material to be measuredOn ()Equal to Tc, then the lower n-th layer material of layering
Temperature T that material is correspondingN=Tc, corresponding relative complex dielectric permittivity εrN=εrc, the 1st layer material temperature T simultaneously1On the downside of test
Temperature obtains；
Step 7-2: by the temperature value of the 1st layer He n-th layer, choose suitable interpolating function in conjunction with temperature changing regularity and enter
Row interpolation calculates, it is thus achieved that the temperature of plate material n-th layer to be measured is Tn, think that n-th layer material is relative to complex dielectric permittivity ε simultaneouslyrn
Interpolation expression formula have and TnIdentical form, at εrNWith N known in the case of only with n and εr1Relevant；
Step 7-3: N shell plate material is regarded as N number of Two-port netwerk cascade network, and the transmission matrix of each network isWherein Z0For free space natural impedance, Z0=
120πΩ；γnFor the propagation constant in n-th layer material,The cascade characteristic utilizing transmission matrix derives N shell material
Expect total transmission matrixAnd be converted to scattering parameter matrix [S], it is thus achieved that treat
Reflection coefficient expression formula at master plate material upper surfaceThis expression formula is only containing unknown number
εr1；
Step 7-4: utilize vector network analyzer to measure under this temperature distribution state at plate material upper surface to be measured
Reflection coefficient S11, utilize S described in step 7-311Expression formula calculates εr1；By εr1With εrNSubstitute into ε described in step 7-2rnExpression
After formula, different n values obtain T1With TNBetween relative complex dielectric permittivity corresponding to remaining temperature spot；
Step 7-5: continue heating and make side test temperature TOn ()Equal to a front thermal stratification state side test temperature at present
Degree TUnder (), obtain T during this time thermal stratification state equallyNWith εrN, the 1st layer material temperature T simultaneously1By temperature on the downside of test
Degree obtains；Repeat step 7-2 to 7-4, obtain the complex dielectric permittivity that under condition of high temperature actual temperature, material is corresponding the most successively.
It is preferred that, the interpolating function in step 7-2 is polynomial function.
It is preferred that, step 7-2 is chosen unitary one order polynomial and carries out linear interpolation as interpolating function, then have
It is preferred that, the temperature of the upper and lower both sides of plate material to be measured is recorded by thermocouple.
It is preferred that, same model thermocouple, wherein downside thermocouple is placed in the upper and lower both sides of plate material to be measured
Being placed in metal heating platform interior, upside thermocouple is placed in detected materials edge, is gone out the temperature of upper and lower both sides by thermocouple measurement
Degree TOn ()And TUnder ()。
The invention have the benefit that the present invention considers the impact of material internal temperature gradient distribution under the condition of high temperature,
By layers of material defines multiple Two-port netwerk cascade network, the relation of concatenation matrix and collision matrix is utilized to establish each layer
Relation between complex dielectric permittivity and the one port scattering parameter of measurement, and then obtain material under condition of high temperature actual temperature
Complex dielectric permittivity.The present invention can more precisely carry out complex dielectric permittivity temperature variation testing, especially superhigh temperature test.By building
Vertical thermal stratification matching algorithm, reduces the test error that material its internal temperature uneven distribution at high operating temperatures introduces.
Accompanying drawing explanation
Fig. 1 is that free space terminal short circuit tests system schematic.
Fig. 2 is that thermal stratification matching algorithm of the present invention is layered schematic diagram.
Wherein, 1 is test reference face, and 2 is upside thermocouple, and 3 is upside temp controlled meter, and 4 is downside thermocouple, and 5 is downside
Temp controlled meter, 6 is metal heating platform, and 11 is vector network analyzer, and 12 is program control computer, and 13 is microwave cable, and 14 is poly-
Burnt antenna, 15 is plate material to be measured, and 16 is heater.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.
Fig. 1 is free space terminal short circuit material testing system schematic diagram.As it is shown in figure 1, free space terminal short circuit
The main test instrunment of method material testing system is vector network analyzer 11, and one port connects focusing sky by microwave cable 13
Line 14 (conventional spot-focusing lens antenna), antenna aperture is the most vertically placed.Metal heating is placed at focusing anteena focal plane
Platform 6, its upper surface needs flat smooth, and surface roughness is less than 1.6 μm, and lateral dimension is more than 3 times of Jiao of spot-focusing lens antenna
Speckle.After METAL HEATING PROCESS platform is heated by the heater 16 being placed in inside, it is conducted to heat be close to METAL HEATING PROCESS platform
And the plate material 15 to be measured that lateral dimension is suitable with heating platform.Vector network analyzer can be by LAN bus by program control meter
Calculation machine 12 carries out data acquisition and calculating.
Fig. 2 is that thermal stratification matching algorithm is layered schematic diagram.Heat is conducted to plate material to be measured by METAL HEATING PROCESS platform
After, the detected materials temperature near heating platform side is higher, and the detected materials temperature away from heating platform side compares
Low, in order to obtain the layer distributed of material temperature under the high temperature conditions, thermoelectricity is placed in the upside being first close to plate material to be measured
Idol 2 also connects temp controlled meter 3, measures temperature T on the upside of detected materialsN；Place thermocouple 4 and connect temperature control in metal heating platform
Table 5, measures temperature T on the downside of detected materials1.Then the method further according to linear interpolation determines each layer of detected materials flat board
Temperature Distribution.Not exclusively it is consistent with the Temperature Distribution of material under hot conditions although so processing, but sees with by detected materials
Becoming same steady temperature to compare, its measuring accuracy will be greatly improved.Due to material its interior temperature distribution thousand at high operating temperatures
Becoming ten thousand changes, different materials its internal Temperature Distribution at the same temperature is also not quite similar, so at high temperature to set up one
It is extremely difficult to the model being suitable under different materials different temperatures, therefore uses the method for the linear interpolation of Temperature Distribution to exist
It is feasible to a certain extent, is also a kind of processing method.
Utilize this method carry out free space terminal short circuit material at high temperature dielectric constant test step as follows:
Step 1: test system carries out free space single port calibration, makes the calibration plane of reference be positioned on metal heating platform
Surface.
Step 2: the plate material to be measured that thickness is l is close to metal heating platform and places.Can lead to after known materials thickness
Cross cascade characteristic by test reference face by calibrating the plane of reference, i.e. heating platform upper surface moves to plate material upper surface to be measured.
Step 3: utilize metal heating platform to treat master plate material and heat, in the upper and lower both sides of plate material to be measured
Placing same model thermocouple, thermocouple selects Wre5-26 thermocouple, and its test temperature upper limit is 2300 DEG C.Downside thermocouple
Being placed in metal heating platform interior, upside thermocouple is placed in detected materials edge in order to avoid reflected signal is produced impact.By heat
Temperature T of upper and lower both sides measured by galvanic coupleOn ()And TUnder (), it is apparent from TOn ()≤TUnder ()。
Step 4: the temperature difference (T in allowed band Δ T recorded when upper and lower both sides thermocoupleUnder ()-TOn ()≤ Δ T) time,
Being approximately considered plate material temperature perseverance to be measured is TUnder ().Δ T can require to determine according to measuring accuracy, is chosen in this embodiment
50℃.Vector network analyzer is utilized to measure the reflection coefficient S at plate material upper surface to be measured11, according to formulaTemperature T can be calculatedUnder ()Relative complex dielectric permittivity ε of corresponding plate material to be measuredr,
Wherein γ0For the propagation constant in free space, γ0=j2 π/λ0, λ0For free space wavelength.
Step 5: continue heating, when the temperature difference that upper and lower both sides thermocouple records reaches Δ T critical state, on record,
Downside thermocouple assay temperature TOn ()And TUnder (), and by the T under this critical stateUnder ()It is designated as Tc；Now will plate material to be measured
As one layer, step 4 obtain TcCorresponding relative complex dielectric permittivity εrc。
Step 6: continue heating, after upper and lower side thermocouple assay temperature difference is beyond Δ T, by plate material to be measured by vertical
To Temperature Distribution be perpendicular to metal heating platform direction be divided into N shell, for ensure certain precision avoid relatively intensive, N simultaneously
Value is typically taken as 3～5.Ground floor is close to heating platform, and its temperature is T1, corresponding relative complex dielectric permittivity is εr1；N-th layer
Temperature is TN, corresponding relative complex dielectric permittivity is εrN, every layer thickness is d=l/N.
Step 7: continue heating and make TOn ()=Tc, now have TN=Tc, εrN=εrc；With TcCorresponding dielectric relatively again is normal
Number εrcOn the basis of, by introducing ground floor temperature T1And complex dielectric permittivity ε of correspondencer1And combine number of plies N, to each layer after layering
Material temperature value carries out interpolation calculation with relative complex permittivity values and obtains temperature T of every layernAnd complex dielectric permittivity εrn.Further
By each layer thickness d and complex dielectric permittivity εrnObtain the transmission matrix of layers of material, in conjunction with cascade characteristic and the transmission of transmission matrix
Parameter and the transformational relation of scattering parameter, by measuring S11And substitute into complex dielectric permittivity ε solving ground floor materialr1, and then obtain
Obtain the complex dielectric permittivity under remaining layers of material different temperatures.Obtain different temperature from low temperature to high temperature temperature variation testing one by one to divide
Layer state, can obtain during high temperature the complex dielectric permittivity of material under actual temperature more accurately.Specifically comprise the following steps that
Step 7-1: continue heating and make upside thermocouple assay temperature TOn ()Equal to Tc, then the lower n-th layer material of layering is corresponding
Temperature TN=Tc, corresponding relative complex dielectric permittivity εrN=εrc.1st layer material temperature T simultaneously1Can be surveyed by downside thermocouple
Examination obtains.
Step 7-2: the temperature obtaining plate material n-th layer to be measured according to the method for linear interpolation is
The relative complex dielectric permittivity that n-th layer material is corresponding can be approximatelyDue to εrNWith N it is known that therefore
Layers of material is relative to complex dielectric permittivity εrnOnly with εr1Relevant with n.
Step 7-3: N shell plate material is regarded as N number of Two-port netwerk cascade network, and the transmission matrix of each network isWherein Z0For free space natural impedance, Z0=
120πΩ；γnFor the propagation constant in n-th layer material,The cascade characteristic utilizing transmission matrix derives N shell material
Expect total transmission matrixAnd be converted to scattering parameter matrix [S], can obtain
Reflection coefficient expression formula at plate material upper surface to be measuredThis expression formula is only containing unknown number
εr1。
Step 7-4: utilize vector network analyzer to measure under this temperature distribution state at plate material upper surface to be measured
Reflection coefficient S11, utilize S described in step 7-311Expression formula can calculate εr1.By εr1With εrNSubstitute into ε described in step 7-2rnTable
After reaching formula, T can be obtained1With TNBetween relative complex dielectric permittivity corresponding to remaining temperature spot.
Step 8: continue heating and make upside thermocouple assay temperature TOn ()Equal to heat on the downside of during a front thermal stratification state
Galvanic couple test temperature TUnder (), T during this time thermal stratification state can be obtained equallyNWith εrN, the 1st layer material temperature T simultaneously1Can
Obtained by downside thermocouple assay.Repeat step 7-2 to 7-4, material pair under condition of high temperature actual temperature can be obtained successively
The complex dielectric permittivity answered.
For improving material temperature layer distributed model further, can use the most smart in conjunction with the heat conduction property of detected materials
True interpolating function, such as polynomial functions such as exponential function, logarithmic function, power functions, to obtain higher measuring accuracy.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual such as complete with institute under technological thought without departing from disclosed spirit in art
All equivalences become are modified or change, and must be contained by the claim of the present invention.
Claims (6)
1. a free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm, it is characterised in that include with
Lower step:
Step 1: test system is carried out free space single port calibration；
Step 2: load plate material to be measured, plate material thickness to be measured is l, and its lateral dimension is more than spot-focusing lens antenna 3
Times focal spot, plate material to be measured is close to metal heating platform and makes plate material upper surface to be measured as test reference face；
Step 3: utilize metal heating platform to treat master plate material and heat, measure the upper and lower both sides of plate material to be measured
Temperature TOn ()And TUnder (), it is apparent from TOn ()≤TUnder ()；
Step 4: as temperature difference i.e. T in allowed band Δ T of the upper and lower both sides of plate material to be measuredUnder ()-TOn ()During≤Δ T, approximation
Think that plate material temperature perseverance to be measured is TUnder (), utilize vector network analyzer to measure the reflection at plate material upper surface to be measured
Coefficient S11, according to formulaCalculate temperature TUnder ()Corresponding plate material to be measured relative
Complex dielectric permittivity εr, wherein γ0For the propagation constant in free space, γ0=j2 π/λ0, λ0For free space wavelength；
Step 5: continue heating, when the temperature difference of the upper and lower both sides of plate material to be measured reaches Δ T critical state, record upper and lower
Side test temperature TOn ()And TUnder (), and by the T under this critical stateUnder ()It is designated as Tc；Now will plate material to be measured as one layer,
T is obtained by step 4cCorresponding relative complex dielectric permittivity εrc；
Step 6: continue heating, after the temperature difference of upper and lower both sides exceeds Δ T, presses longitudinal temperature distribution by plate material to be measured
Being divided into N shell, ground floor to be close to heating platform being perpendicular to metal heating platform direction, its temperature is T1, corresponding relatively multiple Jie
Electric constant is εr1；The temperature of n-th layer is TN, corresponding relative complex dielectric permittivity is εrN, every layer thickness is d=l/N；
Step 7: continue heating and make TOn ()=Tc, now have TN=Tc, εrN=εrc；With TcCorresponding relative complex dielectric permittivity εrc
On the basis of, by introducing ground floor temperature T1And complex dielectric permittivity ε of correspondencer1And combine number of plies N, to layers of material after layering
Temperature value carries out interpolation calculation with relative complex permittivity values and obtains temperature T of every layernAnd complex dielectric permittivity εrn, further by respectively
Layer thickness d and complex dielectric permittivity εrnObtain the transmission matrix of layers of material, in conjunction with cascade characteristic and the transmission parameter of transmission matrix
With the transformational relation of scattering parameter, by measure S11And substitute into complex dielectric permittivity ε solving ground floor materialr1, and then obtain it
Complex dielectric permittivity under remaining layers of material different temperatures；Different thermal stratification shapes is obtained to high temperature temperature variation testing one by one from low temperature
State, obtains during high temperature the complex dielectric permittivity of material under actual temperature the most more accurately.
Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm the most according to claim 1,
It is characterized in that described step 7 further includes steps of
Step 7-1: continue heating and make side test temperature T on plate material to be measuredOn ()Equal to Tc, then the lower n-th layer material pair of layering
Temperature T answeredN=Tc, corresponding relative complex dielectric permittivity εrN=εrc, the 1st layer material temperature T simultaneously1By temperature on the downside of test
Obtain；
Step 7-2: by the temperature value of the 1st layer He n-th layer, choose suitable interpolating function in conjunction with temperature changing regularity and insert
Value calculates, it is thus achieved that the temperature of plate material n-th layer to be measured is Tn, think that n-th layer material is relative to complex dielectric permittivity ε simultaneouslyrnInsert
Value expression has and TnIdentical form, at εrNWith N known in the case of εrnOnly with n and εr1Relevant；
Step 7-3: N shell plate material is regarded as N number of Two-port netwerk cascade network, and the transmission matrix of each network isWherein Z0For free space natural impedance, Z0=
120πΩ；γnFor the propagation constant in n-th layer material,The cascade characteristic utilizing transmission matrix derives N shell material
Expect total transmission matrixAnd be converted to scattering parameter matrix [S], it is thus achieved that treat
Reflection coefficient expression formula at master plate material upper surfaceThis expression formula is only containing unknown number
εr1；
Step 7-4: utilize vector network analyzer to measure under this temperature distribution state the reflection at plate material upper surface to be measured
Coefficient S11, utilize S described in step 7-311Expression formula calculates εr1；By εr1With εrNSubstitute into ε described in step 7-2rnExpression formula after,
T is obtained by different n values1With TNBetween relative complex dielectric permittivity corresponding to remaining temperature spot；
Step 7-5: continue heating and make side test temperature TOn ()Equal to a front thermal stratification state side test temperature at present
TUnder (), obtain T during this time thermal stratification state equallyNWith εrN, the 1st layer material temperature T simultaneously1By temperature on the downside of test
Obtain；Repeat step 7-2 to 7-4, obtain the complex dielectric permittivity that under condition of high temperature actual temperature, material is corresponding the most successively.
Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm the most according to claim 2,
It is characterized in that: the interpolating function in step 7-2 is polynomial function.
Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm the most according to claim 1,
It is characterized in that: step 7-2 is chosen unitary one order polynomial and carries out linear interpolation as interpolating function, then have
Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm the most according to claim 1,
It is characterized in that: the temperature of the upper and lower both sides of plate material to be measured is recorded by thermocouple.
Free space terminal short circuit material high temperature complex dielectric constant thermal stratification matching algorithm the most according to claim 5,
It is characterized in that: place same model thermocouple in the upper and lower both sides of plate material to be measured, wherein downside thermocouple is placed in metal and sends out
Hot platform interior, upside thermocouple is placed in detected materials edge, is gone out temperature T of upper and lower both sides by thermocouple measurementOn ()With
TUnder ()。
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| CN109580661A (en) * | 2018-12-14 | 2019-04-05 | 电子科技大学 | A kind of free space material complex reflection coefficient test method |
| CN110470871A (en) * | 2019-09-20 | 2019-11-19 | 西安电子科技大学 | Based on the multi-mode material electromagnetic parameter test device and method of single port |
| CN114994414A (en) * | 2022-05-27 | 2022-09-02 | 电子科技大学 | System and method for testing dielectric property under high temperature and high pressure by free space terminal short circuit method |
| US20240002682A1 (en) * | 2022-07-01 | 2024-01-04 | Ayro, Inc. | Coating gradient property management for sustainable vehicles, systems, methods, and apparatus |
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| CN114994414A (en) * | 2022-05-27 | 2022-09-02 | 电子科技大学 | System and method for testing dielectric property under high temperature and high pressure by free space terminal short circuit method |
| US20240002682A1 (en) * | 2022-07-01 | 2024-01-04 | Ayro, Inc. | Coating gradient property management for sustainable vehicles, systems, methods, and apparatus |
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